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tw
(02)2705-5066

 www.wunan.com.tw
(02)2705-5066

L. Y. Lin




www.wunan.com.tw
(02)2705-5066

LED

LED

www.wunan.com.tw
(02)2705-5066

 LED

LED

2008
VCSEL

2011 OSA Fellow

LED

LED

IEEE Fellow
SPIE Fellow

www.wunan.com.tw
(02)2705-5066

80%
> 50%
9
34 5
CIGS 6
III-V 7
89

www.wunan.com.tw
(02)2705-5066

10

11

2.1

12

2.2

15

2.3

17

2.4

20

2.5

21

2.6

22

2.7

pn

26

2.7.1

26

2.7.2

29

2.7.3

36

2.7.4

38

39

39

2.8
2.8.1

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2.8.2

40

41

2.9.1

41

2.9.2

44

2.9.3

45

46

2.9

2.10

2.10.1

47

2.10.2

48

2.10.3 Ge

49

2.10.4 GaAsa-Si

51

2.11

53

2.11.1

54

2.11.2

56

2.11.3

58

2.11.4

59

2.11.5

60

2.11.6

61

2.11.7

62

63

64

65
66

3.1

67

3.1.1

67

3.1.2

Floating zone technique, FZ

71

(02)2705-5066

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3.2

72

3.3

75

3.4

77

3.4.1

Bridgman-Stockbarger method

77

3.4.2

Heat exchanger method, HEM

77

3.4.3

Casting

79

3.4.4

Electromagnetic casting method, EMC

79

80

3.5.1

Edge-defined film-fed growth method, EFG

80

3.5.2

Ribbon Growth on Substrate, RGS

81

3.5.3

String ribbon, SR

82

83

3.6.1

83

3.6.2

p-n

84

3.6.3

84

3.6.4

85

3.6.5

86

3.6.6

87

88

3.7.1

cleaning

89

3.7.2

textureing

90

3.7.3

diffusion

91

3.7.4

phosphorus glass etching

92

3.7.5

anti-reflective coating

92

3.7.6

93

3.7.7

firing

94

3.7.8

edge isolation

95

3.5

3.6

3.7

www.wunan.com.twxi
(02)2705-5066

3.8

96

3.8.1

96

3.8.2

96

3.9

98

3.10

98

3.11

99

3.12

100

101

101

105

4.1

106

4.2

109

4.3

110

4.4

113

4.5

121

4.5.1

121

4.5.2

122

4.5.3

123

124

4.6.1

125

4.6.2

128

4.6.3

131

4.6.4

135

141

4.6

xii

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142

142

CIGS

147

5.1

162

5.2

163

5.3

164

5.3.1

co-evaporation

164

5.3.2

Two-step process

166

5.3.3

167

5.4

167

5.5

168

5.6

168

5.7

169

5.8

Cu2ZnSn(S, Se)4

170

172

175

III-V

179

6.1

III-V

180

6.2

III-V

181

6.3

III-V

181

6.3.1

Liquid Phase Epitaxy, LPE

182

6.3.2

Metal-Organic Vapor Phase Epitaxy, MOVPE

183

www.wunan.com.twxiii
(02)2705-5066

6.3.3

Molecular-Beam Epitaxy, MBE

186

6.3.4

Chemical Beam Epitaxy, CBE

189

6.4

III-V

191

6.5

III-V

193

6.5.1

193

6.5.2

196

6.5.3

InGaP

196

6.5.4

GaAs

199

InGaN

204

6.6.1

204

6.6.2

205

218

218

219

6.6

6.7

221

7.1

222

7.2

222

7.2.1

223

7.2.2

225

7.2.3

227

Quantum dot

231

7.3.1

233

7.3.2

234

7.4

241

7.5

242

7.3

xiv

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7.6

243

7.7

244

7.8

245

247

247

249

8.1

250

8.2

250

8.3

255

8.4

258

8.5

263

8.6

267

8.7

271

8.8

280

281

281

9.1

9.2

285

286

9.1.1

Scanning Electron Microscope, SEM

286

9.1.2

Transmission Electron Microscope, TEM

288

9.1.3

Atomic Force Microscope, AFM

290

291

www.wunan.com.twxv
(02)2705-5066

9.2.1

X X-ray Diffraction, XRD

291

9.2.2

Energy Dispersive Spectrometer, EDS

292

9.2.3

secondary ion mass spectrometer, SIMS

293

294

9.3
9.3.1

Photoluminescence Measurement system, PL 294

9.3.1

Spectroscope

296

9.3.2

Raman Spectrometer

296

298

9.4.1

Hall Measurement

298

9.4.2

I-V Measurement

299

9.4.3

Incident Photo to Current Conversion

9.4

Efficiency, IPCE

300

301

301

303

310

xvi

(02)2705-5066

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www.wunan.com.tw
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1970

1990

1996 R.E. Smalley

National Renewable Energy Laboratory, NREL

1.

2.

3.
CO2

4.

98%


(02)2705-5066

www.wunan.com.tw

410 24
2001 41020 2%

1.1 1.2

60%
selfdegradation

40%

2010 3%

www.wunan.com.tw 
(02)2705-5066

18% 2020
5 7
10
CIGS

CdS
CdTe

-
GaAs
InGaAs
InP

--

CuInSe
CIGs

1.1

multi c-Si
1934MW
45.2%

45.2%

ribbon/sheet c-Si
4.1MW
2.2%
Other
4.3MW
0.1%

CdTe
201MW
4.7%
(45.2%/TFPV)

2.2%

45.2%
10.4%

TFPV
445MW
10.4%

4.8%
50.0%

42.2%

CIGS
21.5MW
0.5%
(4.8%/TFPV)

a-Si
222.5MW
5.2%
(50.0%/TFPV)

mono c-Si
1805.7MW
42.2%

mono c-Si

multi c-Si

ribbon/sheet c-Si

Other

CdTe

CIGS

a-Si

1.2


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1.3

25% 21%CdTe
17% Cu(InGa)Se2 20%
8%Dye
sensitized nanostructure materials 11%
Spectrolab Tandem
AlGaInP/GaInAs/Ge
2006 40% concentrated sunlightGaAs

1.3

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Concentrator Photovoltaic, CPV

Fresnel LensSun Tracker
35% 46%

III-V
InGaP/GaAs/Ge
40%

CIGS
9%
US$0.5/

CuInGaSe

energy payback timeCIGS

CIGS
Building Integrated photovoltaic, BIPVCIGS
3C
LED


(02)2705-5066

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Energy Payback Time

1.5 CIGS 1 CPV 8

30

2006
63%

50%

2004

3%
13% 2020
27%

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(02)2705-5066

2010
2008

1,000
2011

1.4 1.5
2011 2011 1,355
12% 5%
2010 21% 208
2011
2010 32% PIDA
2013
1.4%IEA 2050 11%
3,000 GW

(02)2705-5066

www.wunan.com.tw

5%

4%
5%

5%

29%

6%

7%
5%

4%

13%

24%

50%

8%

2010 PV

34%
2011 PV

PIDA, 2011/12

1.4 20102011 PV

160,000
140,000
120,000
100,000
80,000
60,000
40,000
20,000
0

2008

2009

2010

2011(E)

2012(F)

2013(F)

2014(F)

17,048

13,398

26,337

20,806

17,269

19,169

20,895

21,243

16,240

31,924

26,870

22,840

25,809

28,389

22,408

20,232

36,732

32,010

28,169

32,394

35,634

43,122

29,674

59,044

55,823

50,241

59,786

65,765

Tital

103,821

79,544

154,037

135,509

118,518

137,158

150,683

PIDA, 2011/12

1.5

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1.
2.

3.
4. Concentrator Photovoltaic, CPV

5. Energy Payback Time

10

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2.1
2.2
2.3
2.4
2.5
2.6
2.7pn
2.8
2.9
2.10
2.11

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(02)2705-5066

2.1

2.1 1s 2s
10 23
2s 1023
2.1

E=0

3 s
2 p
3p

3s
2p

2 s

2s

1s

1s

2.1

2.2(a)

valence band, VBconduction band, CB

energy gap band gap, Eg 2.2(b)
12

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2.1

K
Ev Ec
Eg = Ec - Ev

+ 4e

E
Ec+
CB 0 K

Ec

= Eg
Ev

VB 0 K

(a)

(b)

2.2 (a)(b)

me* 2.3 hv > Eg

E g

hole mh*

e-
h +

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E
Ec+

CB

Ec

hv>Eg

e h+

Ev

hv

Eg

e-

VB

(a)

(b)

2.3 (a) Eg (b) Si-Si

Si Si Si-Si

hv > E g

GaAs InP

n p n p

14

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2.2

2.2

density of states, DOSg(E)

eV-cm3

DOS 2.4(a) (b) g(E)

(E-EC)1/2

DOS g(E)

(E-EC)DOS

g(E) (E-Ec)1/2
E
E
Ec +

E
[1-f(E)]

CB

= nE (E) dE= n

Ec

Ec

nE(E)

EF

EF
Ev

Ev

= p

VB

g(E)

(a)

(b)

f(E)

(c)

pE(E)

nE(E)

or pE(E)

(d)

2.4 (a) (b) (c)

(d) g(E) f(E)
nE(E) E

f ( E ) E

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2-1

kB T K EF Fermi level
1/2 2.4(c) f(E)
E
1-f(E)
2-1 E F 1/2
g CB( E ) f ( E )
nE(E) 2.4(d) nEdE =
gCB(E)f(E)dE E E + dE
ECEc + n

2-2

( E C - E F) k BT E F E C k BT f ( E ) exp[ - ( E C E F)/ k BT ]
non-degenerate
2-2

2-3

NC = [2 me*kBT/h2]3/2
2-3 (EC - EF) kBT
NC
f(EC) = exp[- (EC - EF)/kBT] EC
N C
2.4(d)

2-4

16

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2.3

NV = 2[2mh* kBT/h2]3/2 2-3

2-4 EF
n = p 2-3
2-4 EFi EV

2-5

NC NV EFi
2-32-4np
mass action law

2-6

EG = EC - EV n2i NCNVexp[- EG / kBT]

E G
ni
n = p = ni
ni 2.25106 cm-3

2.3
impurity

extrinsic semiconductor Si
As Si
n
B p
2.5(a) Si

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Si

0.05eV
1 K BT 0.025eV

0.05eV
2.5(b) As +
E d E c
0.05eV E d

donor 2.5(b) E d E c
~ 0.05eV Nd Nd >> ni,
Nd n = Nd p = ni2/ Nd
np = ni2

e-

CB

As+

Ec
Ed

-0.05 eV

As+

As+

As+

As+

Ev
106

(a)

(b)

2.5 (a) (b) n- As+

Ec

e h

18

(02)2705-5066

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2.3

= ene + enh

2-7

2-8

p
2.6(a)

B -
n
0.05eV B-

2.6(b)
acceptor

106
Ec

h+
B

Ea
Ev

(a)

B-

B-

B-

B~0.05 eV

h+

VB

(b)

2.6 (a) (b) p- B-

Ev

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(02)2705-5066

CB
Ec
EFn

Ec
EFi

Ec
EFp

Ev

Ev

Ev

VB

(a)

(b)

(c)

2.7 (a) (b) n- (c) p- np = n2i

EFiEFnEFp n- p-

Na ni
p = Na p
n = ni2/ Na = eNah
2.7(a)-(c) n- p-
2-32-4 EF EC EV

2.4
n p
NC NV n > NC p > NV

E C
n-
20

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2.5

E C 2.8(a)
band tailbandgap narrowing
effect 2.8(b) p- Ev
n = Nd p = Na

~1020cm3
np = ni2
E
CB

CB
EFn
Ec

Ec

g(E)
Ev

Ev
EFp
VB

(a)

(b)

2.8 (a) n- CB(b) p-

2.5
2.9 n- V
E F E Fi E C

A B

e mf
EF = eV = 0 EF
EF EF

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eV EF EF
EF (A) - EF (B) eV 2.9
Ec - EF
EF

Ec
EF
Ec-eV

Ev

EF-eV
Ev-eV

A
B
n-

2.9 n- V

2.6
L

2-9

me kn n/L
n = 1, 2, 3 ...... kn 2.2
g(E)

22

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2.6

PE

En = ( kn)2/2me

2-10 V(x)
x a V(x) = V(x + a) = V(x + 2a) =

2-10

V(x) a
V(x) = V(x + ma); m = 1,2,3, ...

2-11

PE(r)
r

PE

N
PE

V(x)
a

a
PEV(x) a
x

x=0

2a

3a

x=L

2.10 PE a v = 0
PE = 0

2-10 V(x)
(x) 2-10

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Bloch wavefunctions
k(x) = Uk(x)exp( jkx)

2-12

U(x) V(x) a V(x) exp ( jkx)

k
k
k ( x ) k n E k
2.11 E-k Ek k = - /a + /a
E-k k( x ) E-k
0K
E-k E-k

E-k E-k
Ev Ec (x) 2.11 E-k
E-k
Ek

CB

CB
e-

e-

Er

Eg

Ec
hv

hv
Ev

VB

h+

Ev

h+
VB

-/a

2.11 E-k

24

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2.6

E-k
k
2.11 E-k
2.12(a) GaAs E-k GaAs

E
CB
Ec

Eg
o
VB

Ev

-k

Eg
CB

kcb
k -k

(a)

o
VB kvb

(b)

Ec

CB
Er

Ev
k

-k

o
VB

Ec

Ev
k

(c)

2.12 (a) GaAs k GaAs

(b) (c)

k 2.12(b)

2-12(c)
E r
E r

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GaP GaP E r

2.7pn
2.7.1
n- p- p-n (
pn = n2i ) step junction model p-n p-n
2.13(a) n- p-
M n- p-
CB n
VB p
n- n no
p nop- p po
npo
n p
(p = ppo) n (p = pno) n
n N d
As +
p N a
B- M P n

M space charge layer, SCL

depletion layer 2.13(b) 2.13(c) M

Eo
26

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2.7pn

- x 2.13 (b)
p n Eo
- x + x
E o

p n 2.13(d)
net(x) x = - Wp x = 0M x = 0 SCL
net - eNa
p

n
As+

Bh+

e-

Eo

(a)
M
E(x)

-Wp

Wn

x
(e)

(b)

En
V(x)

M
Wp

log(n), log(p)
ppo

(f)
x

nno

(c)

ni

PE(x)

pno

npo

eVo
PE(x)

x= 0

net
eNd

Vv

Wn

x (g)

-Wp

Wn

(d)

PE(x)

-eVo

-eNd

2.13 pn

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x = 0 Wn +eNd

NaWp = NdWn

2-13

Nd < Na 2.13 2-13

Wn > Wp n p
Na >> Nd n
p + E(x) net(x)
dE / dx = net(x) / = or o r
net
2.l3(e) p-n - x
E(x) M Eo
E = - dV/dx V(x)
p M
2.13(f) V(x) n n
Vobuilt-in potential
n-p net(x) 2.13(d)

2-14

2-15

= o r W o = W n + W p
W o W n W p 2-132-15
Vo
Vo p n
28

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2.7pn

n l n 2
E1 E2

2-16

E = qV q V q = - e 2.13(g)
M p n = npoE = 0 M n n = nnoE =
- eVo

npo/nno = exp(-eVo/kBT)

2-17

Vo nno npo Nd Na
2-17
pno/ppo = exp(-eVo/kBT)

2-18

2-172-18
k

ppo = Napno = n2i /nno = n2i /Nd Vo

2-19

2.7.2
V pn p
n V o V 2.14(a)
(b)

2.14(b) potential barrier

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(02)2705-5066

V o - V p n
exp[- e(Vo - V)/kBT]
n
n
p
Log

Eo-E

p
ppo

npo

PE(x)

nno

Pn(0)

eVo
e(Vo-V)

np(0)
SCL
x'

pno

x
x

W
Wo

(a)

(b)

2.14 (a) pn (b)

W SCL

n n

n
x ' = 0
x' Wn Pn(0) = Pn(x' = 0) pn(0)
e(Vo - V)

2-20

2.14(b) x = - Wp x = Wn e(Vo - V)
ppo pn(0)2-202-18
V n
30

(02)2705-5066

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CCDCharge Coupled Device78, 289,

295
ODCordered defect compound159,
160, 161
OVCordered vacancy compound159,
216
RGAResidual Gas Analyzer190
RHEEDReflected High Energy Electron
Diffraction189, 190
X X - r a y D i ff r a c t i o n ,
XRD286, 291
Binary compound
semiconductor191

Molecular beam epitaxy

181, 183, 186-190, 218, 233
Molecular-Beam Epitaxy,
MBE181, 183, 186, 189, 190, 218
Compound semiconductor3, 5, 44, 61, 110, 181, 183,
191-193, 206
Chemical Bath Deposition,
CBD167, 168
Chemical Beam Epitaxy,
CBE181, 189, 190
C h e m i c a l Va p o r
Deposition, CVD92, 110, 118,

binary phase156, 161, 165

121, 122, 128, 167, 183, 211, 214, 233,

two-ow204

237, 246, 247

SiO266, 86, 91, 92, 98,

106, 128, 136, 137
Two-step process166,
170
chlorophyll262
Ternary compound
semiconductor191-193

Plasma Enhanced
Chemical Vapor Deposition, PECVD
92, 110, 118, 121, 122, 128, 167, 183,
211, 214, 233, 237, 246, 247
C h e m i c a l Va p o r
Deposition92, 121, 128, 167, 183,
214, 233

cylinder bubbler184

Anti-stoke peak298

Intermediate-Band221,

Reflection

241, 242
built-in potential28, 30, 36,
198
built-in voltage, Vbi28, 30,
36, 198
internal quantum
efciency, IQE100, 205

High Energy Electron Diffraction,

RHEED187, 189
reactive ionic etching,
RIE134, 225, 226
radical121
Reactor Chamber183-185
precusor183, 184

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(02)2705-5066

reactive ion etching

136, 236, 241

110, 117, 125, 128, 138-141, 143, 148,

151, 155, 198, 213, 217, 222, 224, 230,

Sunswift II263

234, 236, 238, 240, 241, 243-247, 294,

Solar Education

295, 297, 300

Products267

photon down-conversion

Nichia Chemical
Industries204

236, 238, 240, 241, 247

photo-generated carriers

Sheet Resistance92, 93

236

Active region198, 214

Photovoltaic effect180

Active layer25, 26, 124, 125,

Lift-off201, 212

135, 136, 138-141, 150, 164, 202, 211,

243, 245

light trapping121, 124, 128,

135, 141, 142, 213, 225, 226, 230

working function197

light scattering213

Stoke peak298

Incident Photo to

Quaternary compound
semiconductor191, 192

Current Conversion Efciency, IPCE

286, 300

external quantum

optical path length121

efciency224-226, 240, 241

Spectroscope286, 296

extrinsic semiconductor
11, 17

coevaporation152, 164, 165,

167, 170

Grid-Connected PV
System258

Multibin furnace182
Multi-junction Cell

Distributed bragg
reector184

111, 112, 125, 126, 142, 213, 217, 218,

300

Bloch wavefunctions
23, 24

multilayer121
Andrew Schneider257

mean thermal generation

time37

FFcurve ll factor56, 57
reduced mass13, 22, 47

roughness74, 161

Metal-

Frenkel44

Organic Chemical Vapor Deposition,

Intrinsic point defect156

MOCVD183, 214, 233

photon13, 14, 25, 26, 45-48,

Metal-Organic

50-53, 55, 58, 59, 61, 64, 84, 89, 96,

Vapor Phase Epitaxy, MOVPE

304

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181, 183, 189, 190

subwavelength structure,
SWS129, 130-132, 134, 235
self-assembled236, 237
spontaneous polarization,
Psp209
tandem144, 195, 205, 219

acceptor19-21, 26, 28, 36,

156-158, 161, 174
B r i d g m a n - S t o c k b a rg e r
method76, 77, 79
nanotip235
Nanosphere lithography
131, 134

tensile stress207

patterning134

tensile strain207, 208

nanowire145, 232, 235, 246,

low temperature liquid

phase epitaxy, LT-LPE200
absorption coefficient

247
Nanoimprint lithography
131-133, 141, 222

39-43, 45, 46, 48, 49, 51-53, 58, 59,

Quantum dots232

84, 85, 108, 110, 113, 117, 125, 148,

Directional solidication79

154, 155, 172, 181, 204, 205, 213, 218,

localized states114

243, 296

base pressure122, 123

urbach tail51-53
forming energy156, 157,
160, 161
anti-reflection, AR62, 74,
83-86, 88, 89, 92, 99, 101, 108,
128-131, 133, 137, 149, 168, 197, 200,
201, 212, 213, 222, 224-230, 234-236,
238, 240, 241, 246, 247

Raman Spectrometer
286, 296-298, 301
wave number42, 153
Czochralski pulling technique,
Cz67-69, 71, 72
I-V Measurement
286, 299
DC Plasma122, 123

Anti-Reflection Coating,

direct badgap

ARC83-86, 88, 89, 92, 101, 108,

semiconductor11, 22, 24, 25, 148,

128-131, 133, 197, 201, 224, 227, 230,

153, 154, 196

234, 235, 238

anti-reective coating
92
step junction model26

SiH4, Silane92, 113, 118, 119,

127, 197
Ribbon technology65, 76,
77, 80-82

corneal nipples array130

Ingot technology65, 76, 77

two-stage process152

vacancy13, 14, 71, 157, 159,

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160, 171, 293

Transmission electron

space charge layer, SCL

26, 35

microscopy, TEM168, 286, 288,

289, 292, 301

void155, 156, 162

tunneling recombination

Front contacts197, 198,

212

junction127
National

Pyramid74, 84, 85, 88-91, 98,

132, 134, 227, 228

R e n e w a b l e E n e r g y L a b o r a t o r y,
NREL2, 4, 172

potential barrier
29

Bell Laboratory
151, 186

indirect badgap
semiconductor11, 22, 153, 154
amorphous silicon, a-Si4, 5,
66, 105, 106, 108-111, 113-127, 141,
142, 155, 172, 225-227, 230, 269
Anisotropic Etching
90, 133, 134

Boeing5, 152, 165, 180,

195
Back Surface Filed, BSF
87
back surface field
layer212
background doping impurities

non-degenerate16, 34
Russian Academy of
Sciences180

120
back surface field, BSF197,
199

Vertical furnace182, 183

coherent structure207,
208

polystyrene222, 223, 225,

236, 237
heavy doping198

Building
Integrated Photovoltaics, BIPV
109

Atomic Force Microscope,

AFM286, 290
Emitter54, 65, 84, 89, 98, 198,

donor18, 20, 21, 26, 28, 116,

117, 156-158, 161, 174

200, 202, 203

Radio Frequency, RF68, 79,

Dye sensitized

113, 121, 186, 296

nanostructure materials5

RF Power121

beam ux gauge187

RF Power121

phase separation206

Glow discharge113

Correlation energy, U114

dislocation67, 68, 70-72,

306

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207-209, 212, 291

mist dislocation207-209
self-degradation3
Nucleation layer211
Czochralski pulling
technique, Cz67
Gas mixing system
184
Ammonia, NH392
extinction coefficient41,
161
dipping182
Cu depletion159, 160
defect compensated
donor116, 117
11-13, 16, 18-22, 24, 39, 43, 45-47,
49-53, 87, 88, 114, 124, 153, 193, 194,
210, 211, 213, 221, 241, 242
energy gap band gap, Eg
12, 13, 193, 220
E n e rg y D i s p e r s i v e
Spectrometer, EDS286, 292
Energy Payback Time6,
7, 10, 110
Energy Payback Time,
EPT110
density of states, DOS
15-17, 22, 114-116, 232
band gap11-13, 16, 17, 21, 22,
24-26, 93, 111-117, 120, 125-127, 142,
148, 152-154, 159, 161, 162, 164-166,
168, 171, 174, 181, 191-193, 196-198,
204-206, 213, 214, 216-219, 241, 242,

244-246, 295
bandgap narrowing
effect21
degenerate semiconductor
115, 198
sphalerite/zinc blende153,
160, 204
zinc blende153, 191
pseudomorphic strained
layer207
Floating zone technique, FZ
67, 71, 72
Floating zone
technique, FZ71
IEA8
base pressure123
Ribbon Growth on
Substrate, RGS76, 81
Base54, 84, 177, 198-200, 202,
203
band tail21, 52, 114, 115
band tail114
law of the junction31, 32,
36
Cap layer197-199
Scanning Electron
Microscope, SEM132, 223, 224,
286-289, 292, 301
spin coating223
Hydrouoric Acid, HA69, 74,
89, 92, 236
Liquid Phase Epitaxy, LPE
181-183, 200

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density56, 58

cleaning89
in-situ analysis186
Isopropyl Alcohol, IPA90
heterostructure60, 62, 206,
210, 214

Window layer197, 198, 200,

202, 212, 213
Radio Frequency, RF79
Grain Boundary97

textured74, 222-225

porphyrin262

Texture83-85, 89, 90

tensile stress162, 207

Mott-Wannier44

Fresnel lens213

Neville Mars275

Fresnel reection234

window layer149, 212

Fermi level16, 17, 20-22,

window layer149, 212

TCOtransparent conducting
oxide136

63, 84, 115, 116, 197

superlattice184, 187, 241
quantum well187, 206,

trap center171

208-213, 216, 217, 219, 241, 243

epitaxy200, 205, 233

nearly-close-packed
236

InGaN/GaN multiple quantum

well solar cells with long operating

embedded
biomimetic nanostructure, EBN
225-227

wavelengths216, 219
quantum confinement
effect231

picofarads38

Quantum Wire241

recombination center25,

quantum dot187, 206, 221,

26, 97, 115

231, 233, 234, 236-241, 243, 247

edge isolation95
grain boundary75, 78, 203, 291
grain75, 97, 155, 156, 161,
163-165, 167, 203, 245, 246
SiNx77, 79, 86, 89, 92, 94,
101, 128, 223, 225-228, 237

Soda Lime Glass, SLG149,

150, 152, 162-165
passivation62, 65, 90, 92,
98-100, 112-114, 120, 155, 156, 163,
198, 223, 237
passivation100, 198

Segregation211

passivate90, 237

stagnant boundary layer

Jocopen circuit voltage

190

56, 57, 59, 60, 64, 87, 89, 99, 100, 108,

Jscshort circuit current

116, 125, 148, 166, 203, 214, 224, 239,

308

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240, 242, 300

open voltage56, 57, 59, 60,
64, 87, 89, 99, 100, 108, 116, 125, 148,
166, 203, 214, 224, 239, 240, 242, 300

Microscope, TEM132, 168, 223,

224, 237, 238, 286-290, 292, 301
hole13- 20, 25-27, 30-34, 36,
37, 53-55, 58, 59, 83, 84, 86, 87, 90,

skin death effect198

91, 94, 97, 114, 116-118, 148, 155,

chalcopyrite151-153,

158, 171, 198, 199, 213, 240-243, 245,

158-161, 173, 175

246, 294, 295, 300

tipping182

depletion layer26, 29, 33

Tipping furnace182, 183

piezoelectric field11, 13, 21,

microcrystalline4, 109, 110,

119, 125-127

26-28, 30, 32, 36, 37, 40, 42, 54, 55,

60, 62, 84, 87, 99, 117, 120, 122, 123,

polarization, P40, 209, 210, 218

125, 127, 166, 197, 199, 200, 202, 206,

Polarization Effect209, 210

210, 212, 242, 243, 294, 299

extreme UV131
sliding182
forbidden band158
compensated semiconductor157
carrier gas184
E-beam lithography131,
132
Electric control
system185
electron hole pairs, EHPs
14, 37, 84, 86, 117, 148, 198, 199,
240-243, 245, 294, 295, 300
Scanning Electron

inductively coupled
plasma reactive ion etching236
Electromagnetic casting
method, EMC76, 79, 80
conductivity, 54, 60, 115,
116, 158
Molybdenum, Mo78, 149, 150,
163-166
concentrated sunlight5
shunt leakage current149, 168
Graded Refractive
Index129
Screen Printing89, 93, 100
Anisotropic etching84

Microscope, SEM132, 168, 223,

Cu-rich157, 165

224, 237, 238, 286-290, 292, 301

Indium tin oxide, ITO

scanning electron

211

microscopic132, 168, 223, 224,

In-rich157, 165

237, 238, 286-290, 292, 301

valence band, VB12-17, 19,

Tr a n s m i s s i o n E l e c t r o n

21, 22, 24-26, 241, 242, 295

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Toxic gas scrubber

184, 186

exciton level44
ring87-89, 94, 95, 223, 237

Debye temperature161
Ohmic Contact86, 94, 164,
197, 198

Shockley equation33,
35
Shockley model37

Casting76, 79

Schottky barrier164

Heat exchanger method,

anti-side167, 171, 206-209

HEM76-78

dislocation212

hot-wire120

Edwin H. Hall286, 298, 299

annealing157, 166, 205

Hall Measurement286, 298

Hot Carrier221, 242, 243

piezoelectric polarization,

String ribbon, SR77,

82

Ppz209
compression stress162,

wire sawing74
buffer layer143, 147, 150,
159, 167, 176, 197, 199, 204, 205, 211,
212, 214

207, 208
compressive stain207, 208
stress77, 162, 163, 187,
205-209, 289

Edge-dened lm-fed growth

method, EFG76, 80, 81
Colloidal Lithography134,
236, 241

mist strain205-209
strain205-209
shutter187
GaP6, 26, 39, 191-193, 196,

mass action law17,

20, 21

197
phosphorus glass etching

glow discharge113, 121, 123

92

shading loss198

Dash neck technique67

mobility gap114-116,

Hydrazine172

120

extend states114, 115

mobility edge114, 115

conduction band12, 43, 44,
46-48, 50, 51, 53, 54, 114, 115, 153,
155, 158, 166, 231, 295

217
Sapphire77, 204-206, 211,
212, 214, 216

conduction band, CB12-16,

18, 20-22, 24-26, 241, 242

drift-diffusion equation

sapphire, Al2O377, 204, 205,

211, 212, 214

310

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impurity17-21, 25, 40, 43, 44,

46, 51, 69, 72, 75, 89, 94, 97, 115, 116,
120, 122, 167, 168, 187, 205, 294, 296
Boundary Layer121, 190
Edge-dened lm-fed
growth method, EFG76, 80, 81
dangling bond66, 90, 113,
114, 116, 117-120, 124, 155, 198
dangling bond13, 90, 92, 96, 97,
117, 155
hopping114

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.
., 2012.10

ISBN 978-957-11-6887-6 ()
1.
448.167

101020863

5DF4

Solar Photovoltaics Technologies

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