www.wunan.com.

tw
(02)2705-5066

 www.wunan.com.tw
(02)2705-5066


1960 1964
1965
1969
30

IEDMVLSIISSCCISCAS
1997 2001

IEDM 20032004

2000 IBM

2002 IEEE-DMR 2003 IRPS

20032004 IEDM CMOS
NBTI
JEDEC & FSA

www.wunan.com.tw
(02)2705-5066

MOS

2005 12 1

www.wunan.com.tw
(02)2705-5066


IDM

circuit design house

foundry

yieldthroughput
circuit designerprocess integration
engineer

CMOS

CMOS CMOS
CMOS
/ IC
SOC

know-how know-why

2006

www.wunan.com.tw
(02)2705-5066

 www.wunan.com.tw
(02)2705-5066

1.1

1.2

2
1.1.1

energy bandenergy gap bandgap 2

1.1.2

Fermi distribution function 4

1.1.3

intrinsic carrier concentration 5

1.1.4

donorsacceptors 8

1.1.5

11

14
1.2.1

carrier driftdrift current 14

1.2.2

carrier diffusiondiffusion current

18

1.3

1.4

19
1.3.1

current-density equations19

1.3.2

continuity equations 20

24

26

P-N

29

2.1 p-n 30
2.2

32
2.2.1

32

2.2.2

34

2.2.3

37

2.3

38

2.4

40

2.5

42

www.wunan.com.tw
(02)2705-5066

2.6

2.7

2.8

2.9

45
2.6.1

45

2.6.2

49

2.6.3

I-V 51

56
2.7.1

57

2.7.2

58

61
2.8.1

61

2.8.2

62

70

72

75

MOSFET

3.1 MOS 76
3.2

3.3

3.4

MOS 77
3.2.1

MOS 77

3.2.2

MOS C-V 88

MOS 96
3.3.1

MOS 96

3.3.2

MOS C-V 109

116

118

MOSFET

121

4.1 MOSFET 123

4.2

127

4.3

132

www.wunan.com.tw
(02)2705-5066

4.4

4.5

4.3.1

4.3.2

133
136

140
4.4.1

subthreshold characteristics 140

4.4.2

substrate-bias effect body effect 143

4.4.3

V adjustment 145

4.4.4

mobility degradation 149

152

154

MOSFET
5.1

5.2

157
V

159

5.1.1

channel length modulation 159

5.1.2

velocity saturation 162

166
5.2.1

threshold voltage roll-off 167

5.2.2

drain-induced barrier lowering, DIBL

171

5.2.3
5.3

punch-through 174

179

181

CMOS

183

6.1 CMOS 184

6.1.1

thermal process 184

6.1.2

ion implantation 187

6.1.3

photolithography process 189

6.1.4

etching process 192

www.wunan.com.tw
(02)2705-5066

6.1.5

thin film deposition 194

6.2 CMOS 196

6.3

6.2.1

FEOL 196

6.2.2

BEOL 207

215

217

7.1

219

220
7.1.1

220

7.1.2 CMOS 221

7.2

7.3

7.4

substrate engineering 223

7.2.1

223

7.2.2

STI 225

7.2.3

well engineering 227

7.2.4

isolation engineering 229

7.2.5

Channel Engineering 230

7.2.6

noise isolation 232

233
7.3.1

233

7.3.2

236

7.3.3

238

Source/Drain engineering 239

7.4.1

239

7.4.2

S/D extension 240

7.4.3

Halo Engineering 243

7.4.4

Spacer 244

7.4.5

246

7.4.6

Salicide 247

www.wunan.com.tw
(02)2705-5066

7.4.7
7.5

7.6

Raised S/D 248

inter-connection 249
7.5.1

249

7.5.2

251

7.5.3

252

255

256

8.1

257

258

8.2 SOI 260

8.2.1 SOI 260
8.2.2 SOI 261
8.2.3

fully depleteSOI partial depleteSOI

262

8.2.4 SOI 264

8.3

8.4

Strain Si 265
8.3.1

265

8.3.2

global strain 265

8.3.3

local strain 269

8.3.4

270

3D device 273
8.4.1

8.5

8.6

high-k gate dielectric 274

8.5.1

274

8.5.2

278

Metal gate 282

8.6.1

8.7

Fin-FET 273

282

286

www.wunan.com.tw
(02)2705-5066

287

289

9.1

290

9.2

Inverter 291

9.3

Combinational Logic 294

9.3.1

294

9.3.2 Pseudo NMOS 299

9.3.3

Transmission Gate 300

9.3.4

302

9.3.5

303

9.3.6

304

9.3.7 304
9.4

Sequential LogicLatch, DFF 305

9.4.1

305

9.4.2

306

9.4.3

308

9.4.4

308

9.5

Standard CellGate ArrayCPLDFPGA 308

9.5.1

Standard Cell 308

9.5.2

Gate Array 309

9.5.3

PLD 310

9.6

314

315

10
10.1

317

318
10.1.1

ADC/DAC 318

www.wunan.com.tw
(02)2705-5066

10.2

10.3

10.4

10.5

10.6

320
10.2.1

321

10.2.2

323

10.2.3

326

10.2.4

329

Active device 331

10.3.1

CMOS 331

10.3.2

Bipolar 332

Passive device 334

10.4.1

Resistor 334

10.4.2

Capacitor 336

10.4.3

Varactor 337

10.4.4

Inductor 338

340
10.5.1

matching 340

10.5.2

noise 343

349

350

11

351

11.1

CMOS 352

11.2

SRAM 356

11.3

DRAM 362

11.4

Flash 369

11.5

376
11.5.1 NROM 376
11.5.2 FRAM 377
11.5.3 MRAM 379
11.5.4 OUM 379

www.wunan.com.tw
(02)2705-5066

11.6

383

384

12 SOC

385

12.1 IC 386
12.2 SOC 387
12.3

12.4

390
12.3.1

Computer 390

12.3.2

Communication 393

12.3.3

Consumer 400

12.3.4

407

410

411

13 WAT
13.1

413

DC 415
13.1.1

MOS 415

13.1.2

Isolation 427

13.1.3

Resistance 432

13.1.4

Gate Dielectric Integrity 435

13.1.5

Junction integrity 437

13.1.6

Design Rule Check 437

13.2 C-Vcapacitance-voltage 442

13.2.1

Oxide Capacitance 442

13.2.2

Junction Capacitance 444

13.2.3

Leff 446

13.2.4

Inter/Intra Metal Capacitance

448

www.wunan.com.tw
(02)2705-5066

13.3 RF 449

13.4

13.5

13.3.1

449

13.3.2

451

13.3.3

453

459
13.4.1

459

13.4.2

462

467

469

www.wunan.com.tw
(02)2705-5066

 www.wunan.com.tw
(02)2705-5066

www.wunan.com.tw
(02)2705-5066

1.1

energy bandenergy gap

Fermi distribution function intrinsic carrier concentrationdonorsacceptorsextrinsic semiconductor

1.1.1

energy bandenergy gap bandgap

solidallowed
energy bandforbidden energy band
1-1 energy-band diagram
valence band
valance bandconduction
band E E
forbidden energy gap
energy gap bandgapE

www.wunan.com.tw
(02)2705-5066

CHAPTER 1 3

E =E

1.1

E
E

E
E

1-1

E
hole
E = 1.12eV
insulator
SiO2 9eV

1eV
E 1.12eV E 1.42eV

1.1.5

www.wunan.com.tw
(02)2705-5066

1.1.2

Fermi distribution function

Fermi-Dirac Fermi

1.2

Boltzmann constantT E
Fermi level1.2 E

E T = 0K E <

= 1 E >

= 0

E
E
E T > 0K E = E 1.2
= 1/2 E 1/2
1.2 E
E f < 1

www.wunan.com.tw
(02)2705-5066

CHAPTER 1 5

E 3kT
1.2 20 1/20
E E 3kT1.2
E>E

1.3

E<E

1.4

E<E

1.5

1.4
1

1.5 E E

1.3 E E
1.3

1.5

0 1
E E

1.1.3

intrinsic carrier concentration

1.3
1.6

density of states

effective
2.861019cm 3

1.6

www.wunan.com.tw
(02)2705-5066

1.5
1.7

2.661019cm 3

intrinsic semiconductor

1-1 n
p

1.8

intrinsic carrier concentration

intrinsic carrier density

level

intrinsic Fermi

1.61.7

1.9

1.61.71.81.9

www.wunan.com.tw
(02)2705-5066

CHAPTER 1 7

np =

1.10

1.11a
=

1.11b

1.1

1.9

1-1

midgap

1.12

1.61.71.31.5
1.1.5

1.61.7
1.13
1.14

1.8
1.61.7 n p 1.131.14

1.8

1.10
n
p

mass-action law

www.wunan.com.tw
(02)2705-5066

1.11
1.1 300KSiGaAsGe

1.1

1.12eV

1.51010cm

1.42eV

2106cm

0.66eV

2.51013cm

1-2

3
3

1.1.4

donorsacceptors

extrinsic semiconductordoping

1-3 Si
Si IV
Si
covalent bondingcovalent bond

www.wunan.com.tw
(02)2705-5066

CHAPTER 1 9

T(K)
500

400

300

250

1016
Ge

n (cm 3)

1014

2.51013cm

Si

1012

1.51010

1010
GaAs
10

10

2106
2

3
1000/T(K)

1-2

SiGaAs Ge

4
1

Streetman and

Banerjee[14]

Si

1-3

www.wunan.com.tw
(02)2705-5066

10

impurity
V
Si

1-4

50K

donor level V dopant

donor impuritydonorPAsSb

n n

1-4 (a)donor(b)acceptor
Streetman and Banerjee[14]

www.wunan.com.tw
(02)2705-5066

CHAPTER 1 11

Si III B

1-4

50K

acceptor level
III acceptor impurityacceptor
B Si

p p
1-5 covalent bonding
model 1-5 As V

ionize
1-4 1-5
B III

1.1.5

n
p

www.wunan.com.tw
(02)2705-5066

12

+4
Si

+4
Si

+4
Si

+5
As

+4
Si

1-5

+4
Si

+4
Si

+4
Si

+4
Si

+3
B

+4
Si

-q
+4
Si

+4
Si

+4
Si

+q

+4
Si

+4
Si

+4
Si

+4
Si

(a) As(b) B Sze

[5]

1.6

1.15

1.7

1.16

1.15

1-6 p

1.16

1-6

www.wunan.com.tw
(02)2705-5066

CHAPTER 1 13

1-6

1.61.13
1.17
1.71.14
1.18
1.17 n 1.18 p
1.19
1.10mass-action law
1.171.181.19
n p

n majority carrierminority carrier p

www.wunan.com.tw
(02)2705-5066

14

1.2

driftdiffusion

1.2.1

carrier driftdrift current

drift velocityrandom thermal motion

1-7
1-7 E
= 0

2
4
6

2
4

1-7

1.20

electron mobility

cm2/V sec E

www.wunan.com.tw
(02)2705-5066

CHAPTER 1 15

1.21

1.201.21

1.2 300K
Si

effective mass
1.2
(

1430

470

9200

320

3900

1800

drift current

1.22
coul/cm2 sec amp/cm21.22

n 1.201.22

1.23

www.wunan.com.tw
(02)2705-5066

16

1.24
p 1.21
1.25

1.231.25
1.26

conductivity

cm 1

1.27

resistivity

cm

1.28

1.28

www.wunan.com.tw
(02)2705-5066

CHAPTER 1 17

1.29

1.28

1.30

1-8
300K

1-8

1-8

Si 300K

cm

1012

p
n

1016

1021

cm 3

1-8 300K

www.wunan.com.tw
(02)2705-5066

18

1.2.2

carrier diffusiondiffusion current

diffusion

diffusion currentconcentration
gradient

1.31
dn/dx

diffusion coefficient diffusivity cm2/sec 1-9

n x x x
x
dn/dx x
x

1.32
dp/dx

1.32

x dp/dx > 0 x x
x

1.33

www.wunan.com.tw
(02)2705-5066

CHAPTER 1 19

n(l)

n(x)

n(0)
n ( l)

l
0
x

1-9

1.3

1.3.1

current-density equations

1.2 1.23
1.311.25
1.32

www.wunan.com.tw
(02)2705-5066

20

1.34

1.35

1.36
1.341.351.36current-density
equations

1.3.2

continuity equations

recombination
generation

continuity equations

1-10 x

www.wunan.com.tw
(02)2705-5066

 471

ADI after development inspection
ADSLAsymmetric DSL

192, 215

356, 394, 397-399

AEIafter etching inspection 193, 215

APAccess Point

396

APCVDAtmosphere Pressure CVD

BGAball grid array

194-195

389

BJT bipolar junction transistor 161-162, 263, 333, 459, 462

Circuit simulator

459, 466

CMPChemical Mechanical Polish 195-197, 207, 209-210, 213, 253,

284
COBcapacitor over bit line 364
COPscrystal-originated pits
DC DC sweep

223

464

Deal triangle

105-106

DIBLdrain induced barrier lowering 122, 138, 159, 170-175, 177, 179, 231, 239, 258,
331-332, 423
EEPROM

352, 354, 369, 377, 379, 386, 406

FPGAField Programmable Gate Array 311

IGFETinsulated-gate field effect transistor 122
LATLarge Angle Tilt implant 243
LDD lightly doped drain

173, 196, 202-203

MISFETmetal-insulator-semiconductor field effect transistor

122
MOSTmetal-oxide-semiconductor transistor 122
native device

300

NBTI negative bias temperature instability 154, 159

ONOoxide-nitride-oxide

375-376

OSIOpen System Interconnection 399, 407-408, 410

OUMOvonics UnifiedMemory 379-381, 383
passive element 330, 334, 336, 338, 341, 432-433, 453, 463-464
PCMPhase change memory 380
PTSPunch Through Stopper 243
random logic 290

www.wunan.com.tw
(02)2705-5066

472

ROM

310, 352-354, 369, 371, 376-377, 379, 383-384, 386, 406

SCR 425
SiN

197-198, 210-211, 213, 227, 238, 269

SiO N silicon oxynitride

SNM

147

360-362

SOISilicon on Insulator

223-224, 259-265, 271-272, 283, 286, 329, 339, 347-348

SPICESimulation Program with Integrated Circuit Emphasis

459, 462-463, 465-466,

469
SRAM 220, 232, 312, 352, 356-363, 368, 379, 383, 386, 396
TIPSTilt Implant Punch Through Stopper 243
TLPtransmission line pulse

424

USBUniversal Serial Bus 392-393

VoIPVoice over Internetwork Protocol

403-404

diode parameter 462

two metal layers 196

large signal

457

CPU

390, 393

neutral region

45, 49-50, 52, 111, 262, 264

well engineering

227-229

intra-well isolation

229-230, 430-431

well to well isolation

inter-well isolation
transconductance
interface state

427-428

229-230, 429-430

279
233, 238, 276, 281

103, 215, 247, 249, 251, 253, 255, 276-279, 281-286, 337, 363, 368, 375, 448

dielectric constant 34, 41, 89, 147, 150, 235, 238, 251, 259, 275-276, 278,
280, 337, 365-367, 442, 448, 468

123, 136, 147, 207, 210, 238, 245, 253, 274-277, 279-280, 282, 339, 366, 368, 462,

467-468
462

www.wunan.com.tw
(02)2705-5066

 473

333, 349

matching

device instability
device designer

99

122, 449

isolation engineering
allowed energy band
built-in potential

225, 229-230

32-33, 35, 37-38, 40, 44-45, 67, 70, 171

249-250
inter-layer dielectric ILD

103

401

split word line

scribe-line

362

414

chemical vapor deposition,CVD

chemical bond model

194, 196, 203, 251, 253

12, 24

matchimg

185, 265, 283, 333, 335, 337-338, 340-342, 349, 388, 451

inverter

290-293, 299, 305, 309, 314, 326-327, 362, 422

reactive ion etchRIE

inversion

115

80-90, 94-96, 99, 109-111, 116, 124, 128, 133-134, 139-140, 143,

150-151, 153, 162, 167, 225, 228, 236-237, 275, 279, 281, 364-365, 415, 417, 420, 442
inversion charge density
inversion layer

128, 279

82, 89, 94-95, 110-111, 124, 128, 133-134, 139, 150-151, 162,

237, 275, 364-365, 415

minority carrier

13, 20, 22-23, 31, 45-47, 49-53, 82, 94

minority-carrier lifetime
minority carrier injection
sheet resistance

22
47

247, 432, 468

active device 331, 334, 345, 427, 462

active area 196, 198, 205, 226, 430-432, 435, 437, 439, 441
work function

77-78, 88, 91, 97-99, 109-111, 116, 146, 236-237, 281-285

work function difference 78, 88, 91, 97-99, 109-110, 116, 146, 236-237
power amplifier

329, 396, 457

457-458

semilog plot

54-55, 57, 141-142

dehydration bake
de-activation

190

232

Erasable Programmable Read Only Memory; EPROM

386

www.wunan.com.tw
(02)2705-5066

474

386

PLD

41, 337, 349

Varactor

variable reactor

41, 337, 349

290, 340, 450, 456-457

distortion

average traverse field

flat-band condition
flat-band voltage

149

79, 83, 98-100, 109-110, 117

99-100, 109-116, 281

intrinsic semiconductor

6-8, 11, 13, 24, 81, 84

intrinsic Fermi level

6-7, 11, 13, 24, 33, 77, 81

intrinsic carrier density 6

intrinsic carrier concentration
bulk punch-through

174

unsaturated bondings
undoped Poly-Si
Flip-Flop

2, 5-6, 8-9, 11, 13

99
200

306-308, 314, 356

switch

397, 399-400, 407, 409

photoresist, P.R.

102, 189-192, 196, 200-205, 208, 210-211, 215, 226

P.R. coating

190

Mask Read Only Memory; Mask ROM

full custom design

386

386

global strain 265, 268-269

common sourceCS
covalent bonding

323-325, 331
8-9, 11

covalent bonding model 11

refresh 356
refresh 366
synchronous 95, 300, 307, 328-329, 356, 363, 395
synthesizer
anneal

336, 338

104, 106, 108-109, 146, 199, 201, 205, 229, 242

multiplexer MUX
multimedia

304-305

392, 394-396, 398-400, 402-403, 409

ploy-Si 123, 188, 194-196, 200-202, 215, 233, 236-239, 244, 281-283, 334, 356,
363-364, 368, 431-432, 435, 437-441
poly-depletion
poly-Si gate

236, 238, 281

188, 195-196, 200, 202, 215, 237

www.wunan.com.tw
(02)2705-5066

 475

poly layer

437, 439-440

majority carrier

13, 17, 20, 22, 30-33, 45-47, 49-50, 81-82, 95

curvature effect

68-69

effective channel length

173, 425-426, 446, 468

effective density of states

effective mass

5-6

15, 65, 151

subthreshold characteristics
subthreshold slope

140-142, 172-175, 177-178

141-142, 173, 175, 178, 294

subthreshold current
subthreshold swing

137, 140-142, 152, 172-173, 175, 420

141, 152, 420

242, 244, 247, 274

salicidation

Self-align contact, SAC 244

spintronics

379

series resistance
potential barrier

57, 258, 336

171-172, 174

low-k 215
low power

141, 153, 261, 356, 371, 388

low standby power, LSTP

low-level injection

222, 274-275

22-23, 45-47, 49

336, 338

LNA

low operating power, LOP

221, 274-275

low frequency 91, 94-96, 116, 343-344, 451, 453, 456, 467
matallurgical junction
uniformity
pinch-off

30, 36-37, 40, 43, 123, 446

248, 334

128-130, 139, 417

pinch-off point 128-130

fully deplete

262-264, 283, 286

local strain

269

354-355, 369-375, 377, 379, 401

fast transient charging
rapid thermal anneal,RTA
anti-punchthrough

186, 201, 205, 229

188-189

anti-punchthrough implant
deposition

280

243

76, 103

epitaxial silicon

248

www.wunan.com.tw
(02)2705-5066

476

drain conductance

138

saturation drain current

System in a Package; SiP
system on a chip

390

401

SoC; System-on-Chip
yield

130

387-388, 391-393

27, 73, 76, 155, 182, 218, 223, 334, 387, 390, 414, 467

acceptor 2, 8, 10-12, 17, 24, 31, 81, 87, 111, 150, 418
acceptor level

11

acceptor impurity

11-12, 17

fixed oxide charge

constant current
solid solubility

417

232

192-193

undercut

priming

190

extension S/D
tensile

99, 104-107, 149

231, 240-242

265, 268-269, 286

Wavelength Division Multiplex; WDM

physical vapor deposition, PVD
direct tunneling
salicide

400

194-195, 205

235, 240-241, 258, 275

195, 242, 244, 247, 274, 278, 283, 285, 334, 432

247

local oxidation of Si

149

silicide or salicide 196, 205, 239, 246-247

substrate 78, 85-88, 92, 97-98, 110, 116, 123, 145, 165, 167, 175, 196, 276, 344
depletion mode

122, 124-127, 131, 152, 299

depletion region

31-32, 34-43, 45-49, 51-53, 56-59, 61-65, 68, 70, 81-82, 86-89,

91, 93-95, 111, 130, 133, 143, 150, 167, 169-170, 172, 175-176, 189, 231, 262, 337, 371,
444
depletion capacitance

40-41, 44, 91, 94-95

vacancy 242
space charge

31, 34-38, 41-43, 45, 81-82, 87-89, 143, 150, 167, 417

space charge region

DIBLsubsurface-DIBL

31, 37, 45, 81, 88, 417

175

subsurface punch-through
surface roughness

174

149, 238, 279

www.wunan.com.tw
(02)2705-5066

 477

surface scattering
surface potential

149-150, 165, 237-238

77, 83-84, 86-89, 93, 116, 140-141, 171

MOS 75-77, 96-97, 122, 275, 278, 281-282, 331, 452, 462
metal-oxide-semiconductor field effect transistor MOSFET
75-76, 97, 122, 452, 462
MOSFET 75-76, 97, 122, 452, 462
195-196, 205, 239, 246-247, 285

metallization

inter/intra metal capacitance

metal layer

448

76-77, 103, 194-196, 213, 247-248, 251, 253, 339, 345, 431-432,

437-440, 448, 462, 468

long-channel 122, 130, 136, 138, 149, 158-160, 163-167, 169-173, 177, 423,
437, 462
barrier layer 253, 276, 281
adhesion 205, 251
non-volatile

187, 193, 203

anisotropic

352, 355, 369, 376, 379, 386

380

passivation

195, 213-215

184, 196

115, 184, 194, 196, 207, 437, 442, 448

donor 2, 8, 10-12, 17, 24, 30-31, 87, 111

donor level

10

donor impurity

10

30, 76, 78-81, 97, 99, 101-102, 104-110, 113, 132, 138, 147, 149-150,

interface

153, 174, 276-277, 279, 281, 312, 344, 392, 398

interface trapped charge
phase comparator
phase detector, PD

328

235, 467

counter
load

328

61-62, 66, 99, 103-104, 106, 238, 277, 371, 451

tunneling

99, 107-109, 113, 149

308, 401

290-291, 293, 295, 323-325, 356-357

97, 123, 223, 232, 346

reprogrammable 311-312
overlap

4, 7, 11, 128, 167, 245, 375, 438-439, 441, 462

www.wunan.com.tw
(02)2705-5066

478

latch

305-306

multiplication factor 63, 65

Personal Digital Assistant

394, 404, 409

atomic layer deposition,ALD 253, 277, 277

differential amp
dislocation

340, 358-359

226-227, 269, 366

Coulomb scattering
weak inversion

230, 279

82, 84, 116, 140

290, 305, 312

clock

290, 300, 307, 318, 326, 328-329, 343, 345, 356, 363

propagation delay time 210, 251, 290-291, 293, 326, 358, 442, 448-449, 455,
466
oxide trapped charge
oxide capacitance
oxide charge
floating gate

99, 104

89, 91, 94-95, 110, 130, 152, 442

89, 91, 94-95, 110, 130, 152, 442

353-355, 369, 371, 373-377

ICApplication Specific Integrated Circuit; ASIC

386

vacuum level 77, 79, 97-98

narrow channel effect
energy band diagram

461

2, 13, 24, 31-32, 38-39, 62, 70, 77-80, 83-84, 88, 90, 96,

98, 100, 111, 116-117, 153

7, 107, 108

midgap

barrier height
memory card
Memory

79, 172-173, 423

370, 406

275-276, 283, 294, 318, 329, 352-356, 358, 360, 362-364, 368-377,

379-380, 382-383, 386, 389, 391, 396, 401, 405-406

re-work

192

reverse bias

38-42, 44, 46-50, 53-54, 56-58, 61-63, 65, 67, 70, 143-144, 170,

172, 175, 178, 292, 337

reverse saturation current
retrograde well
routing

53-56, 58

229

311-313

flicker noise, 1/f noise

high-k

344, 456

123, 136, 215, 275-276

high-k gate dielectric 123, 276

www.wunan.com.tw
(02)2705-5066

 479

high k

147, 235, 259, 276, 278, 280, 337, 364, 366, 442

high-performance, HP 153, 221, 223, 245, 259, 272, 274, 283, 333
high-level injection
aspect ratio

57

225

high frequency

91-92, 94-96, 112, 114, 116, 245, 280, 328, 330, 332-334, 343,

397, 405, 414, 444, 446, 449, 451-455, 457-458, 460, 467

dry oxidation 104, 106-108, 185, 215

dry etch
spacer

192-193, 215, 282

192, 195-196, 203-204, 226-227, 242, 244-246, 248, 280, 446

dynamic 220-221, 290, 292, 332, 352, 362-363, 386, 389, 402
Dynamic Random Access Memory; DRAM

352, 362, 386

Institute of Electrical and Electronics Engineers; IEEE

stack

396

363-364

substrate body

77, 79-80, 82, 88, 90-91, 96-97, 99, 102, 107-109, 111, 116-117,

123-127, 143-146, 148, 152-153, 170, 174-175, 178-179, 196, 292, 418, 421, 467
body effect factor 145-146, 153, 179, 418
substrate current

421, 467

substrate-bias effect body effect

breakdown voltage

140, 143-145, 173, 176

56, 61-63, 65-69, 71, 174, 176, 178-179, 189, 239,

246-247, 333, 423-424, 431, 436-438, 467

normally-on 122, 124-126
normally-off 111, 122, 124-125
band pass filter 329
Direct Band to Band Tunneling current, DBTB

240-241

strong inversion

82, 116, 236

junction depth

68-69, 71, 167, 171, 173, 175, 187-188, 241-242, 375

junction capacitance

40-41, 44, 70, 91, 230, 239, 245-247, 259, 261, 272,

444-445, 462
contact/va

468

contact resistance 246-248

shallow junction

71, 171, 173, 175, 241-242, 244-248, 255, 258, 271

shallow junction technique

71, 173, 175

shallow trench isolation149, 166, 196, 225-226

mixed-signal 318, 320, 331, 334, 340, 386
Mixer

336, 338

www.wunan.com.tw
(02)2705-5066

480

aspect ratio

253

ideal diode equation 53, 56, 60

ideality factor

60

14-15, 132, 136, 149, 238, 258-259, 265, 267-271

mobility

mobile ionic charge

99, 102, 104

passive device 330, 334, 336, 338, 341, 432-433, 453, 463-464
pocket implant

243-244

halo engineering
design parameter

243
139

459

margin

159, 166, 173-179, 188-189, 423, 427

punch-through

punch-through voltage
soft bake
contact

175-176, 178-179, 427

190-191
207, 209, 253-254, 433, 435, 438-439, 441-442, 462, 468

via first
channel

253-254

71, 82, 95, 122-128, 130-134, 136, 138-140, 143, 148-150, 152-153,

158-175, 177, 179, 188-189, 223, 225, 228-231, 233, 236-241, 243-246, 248, 255,
258-259, 261-262, 264, 267-269, 273, 275, 277, 279, 283, 291, 293, 295, 321, 325,
331-332, 340, 343, 353, 364, 367, 371, 373, 376, 394, 415, 421-423, 425-427, 437, 442,
446, 461-462, 468
channel engineering

228, 230, 255

channel length modulation

123-124, 130-131, 134, 136, 139-140, 152,

158-162, 165-167, 170, 172-173, 175, 177, 179, 189, 231-232, 240, 243, 258-259, 262,
275, 293, 295, 321, 325, 331, 376, 425-426, 446, 461, 468
channeling effect

122, 158, 169, 171, 173, 179, 189, 223, 230-232, 237-239,

241, 243, 246, 262, 264, 367, 423, 461

channel conductance

138-139

continuity equation
velocity saturation
latch-up

149, 158-159, 162, 164-165, 417

159, 227-228

avalanche breakdown
birds beak

19-23, 47, 49

61-63, 65, 67-68

196, 225

passivation layer
field device
field oxide

215

147
147, 149, 225, 227, 348, 368, 375, 431

www.wunan.com.tw
(02)2705-5066

 481

field isolation

431

field transistor
recombination

147-148

20-23, 45, 49, 53, 57-60, 95, 456

generation-recombination noise

456

raised S&D 248, 265

volatile 352, 355, 369, 376, 379, 386
scattering

63, 149-151, 228, 230, 232, 237-238, 268, 279-280, 453

shot noise 456

CSPChip Scale Packaging
lattice scattering

63, 151, 232

die chip

207, 258, 277, 414

Foundry

196, 258, 459, 461

smart card

389

377, 406

nitrogen anneal 239

ionize

11-12, 17, 24, 62-63, 65-66

trench first 253

test key test structure
short-channel

414, 428-432, 434-441, 443-444, 448, 466-468

71, 122, 136, 138, 149, 158-162, 164-175, 177, 179, 223,

230-232, 237-239, 241, 243-246, 248, 255, 258, 262, 264, 283, 331-332, 367, 422-423,
461
short channel effects

122, 158, 160, 169, 171, 173, 179, 223, 230-232,

237-239, 241, 243, 246, 262, 264, 367, 423, 461

hard bake
isotropic

190-191
187, 192-193, 203

equivalent oxide thickness, EOT

275, 278

insulator 3, 76, 78, 89, 122, 132, 355

dummy patterns

226

Fermi distribution function

Fermi potential

2, 4

418

Fermi level 4-7, 11-13, 24, 30, 32-33, 38, 77-79, 81, 97-98, 140, 280-283
Fermi level pinning

280-283

Cable Modem Termination System; CMTS

sodium

398

102, 207, 213

on-state current on current

switch

142, 152

122, 141-142, 221, 239, 249, 258, 300-301, 304-305, 405, 415-416, 420,

435, 444, 466

well-to-well isolation 229-230, 427, 429-430, 467

www.wunan.com.tw
(02)2705-5066

482

step coverage

195, 253

forward bias

38-39, 41, 46-52, 54-60

sequential logic

294, 305-307, 311

transmission line

452

Microcontroller; MCU
particle

386, 393, 401, 405-406

103, 195, 223

221, 318, 326, 329, 356, 386, 389-391, 393, 401, 406
104, 184, 189-191, 193, 195-196, 198-205, 208-211, 215, 226

photolithography

sense amplifiers
damage

318, 358-360, 366

186-189, 198-200, 333

halo implant

243

Source/Drain engineering 239-240, 246, 332

quasi-neutral approximation
boron penetration

201, 205

forbidden energy gap

capping layer

2, 107

277

ionization rate

64-66

data selector

304

carrier

45

2, 4-6, 8-11, 13-15, 17-18, 20, 22-23, 30-33, 41-42, 45-53, 57-58, 62-63,

65, 79, 81-82, 84, 94-95, 104, 108, 116, 124, 130-133, 136-137, 149-151, 153, 158-159,
161-163, 171, 173, 188, 202, 224, 228, 231-233, 236-240, 244, 258-259, 264-265,
267-269, 271-272, 279, 281-282, 286, 293, 295, 322-323, 332-333, 343-344, 347, 371,
415, 417, 421, 425, 456, 461
carrier multiplication 62-63
velocity saturation
carrier drift

158

14

carrier mobility

137, 149, 153, 162-163, 224, 233, 267, 272, 279, 282, 293,

295
mobility degradation
carrier diffusion
transition region
kalium

18
99, 104-105

102

gate array

309-310, 314

gate dielectric

279, 282

123, 238, 275-277, 280, 467

103-104, 115, 117, 123, 126, 132, 147, 152-153, 159, 166, 179, 188, 196,

www.wunan.com.tw
(02)2705-5066

 483

199-200, 233-234, 238, 252, 262, 274-275, 277-279, 286, 295, 344, 371, 373, 423, 425,
427, 435, 442-444, 467-468
gate oxide breakdown

159, 179

gate oxide capacitance

152

gate insulating layer

gate line width
isolation

123, 221, 389

247

128, 149, 166, 196, 215, 223, 225-230, 232, 244, 247, 251, 255, 260-261,

272, 345-347, 366, 368, 405, 422, 427-431, 448, 453, 467-468
electron-beam evaporation
electron-hole pairs

104

57, 62-64

electromigration, EM 14, 130, 133, 138, 152, 208, 210, 223, 226, 232, 253,
264, 280, 295
electron mobility 14, 130, 133, 138, 152, 223, 226, 232, 264, 280, 295
electron affinity

77, 97

resistance 16-17, 57, 128, 139, 187, 239, 246-250, 252, 258, 274, 282, 301, 319,
323-325, 329, 334-336, 340-344, 346, 349, 356, 379-380, 415-416, 425-426, 432-435,
446, 456, 462-463, 467-468
resistivity 16-17, 247, 252, 468
current-density equations
current source

324-325, 359

current mirror

321, 325-326

charge center

19-20

78, 89, 97, 132

charge sharing model

167-168, 170

charge storage capacitance

42

charge pumping technique

279

circuit layout 147

plasma etching

104, 203

16-17, 137-139, 232, 261-263, 344, 416

conductivity

16-17

Voltage Controlled Oscillator, VCO

327-329, 336, 338

190

saturation region

127-131, 135-139, 152, 159-161, 167, 171-173, 232, 321, 325

saturation current

53-56, 58, 130, 232, 279-280, 293, 322, 417, 426-427, 466

pad oxide

196

physical thickness

275

www.wunan.com.tw
(02)2705-5066

484

440

mis-alignment
alignment

187, 190-191, 205, 242, 244, 247, 262, 274, 368, 429, 432, 440

cutoff region

127-128, 140, 152

threshold voltage

152

4, 7-8, 10-12, 15, 17, 24, 30, 34-35, 38, 40-42, 44-45, 55, 62, 66-70, 78, 80, 82, 85-86,
88, 91, 97, 111, 116, 123, 125-127, 132, 140, 145-146, 153, 170, 173-176, 184-189,
194-196, 200, 202-204, 209, 223, 227-232, 236-239, 241-246, 253, 261-262, 264,
270-271, 277-278, 282-283, 285, 334, 337, 340, 346, 418-419
impurity

4, 7, 8, 10, 11, 86

Spin-On Dielectric

251

leakage current 124, 128, 132, 158, 166, 175-176, 220, 226, 230-232, 246, 258,
261-262, 273-275, 278-279, 292, 366, 422-423, 426-427, 435-438, 467
drift 14-16, 18-20, 25, 32, 70, 102, 104, 132-134, 140, 162-164
drift velocity
drift current

14-16, 133-134, 162-164

14-16, 133-134, 162-164

gradual-channel approximation
79-80, 94-95, 116

accumulation

etch-stop layer
etch rate

210

192-193

process module

184

Lightly Doped Drain, LDD

copper contamination
Hf-based

133, 167

173, 196, 202-203

252-253

278

valence band valance band

enhancement mode
Broadband
write

2-8, 10-14, 30, 32, 61, 81, 107

111, 122, 124-127, 129, 131, 152, 195, 415

356, 395, 398-400, 404

354-355, 358, 360, 363, 365-366, 369, 371, 373-374, 377, 379

Moore's law 220, 387

DSP, Digital Signal Process
register

312, 329, 386, 393, 401, 409

308

transient analysis 462, 464-465

standard cell
model card

308-309, 314

462, 468

ohmic contact 77-78

cleanliness 102

www.wunan.com.tw
(02)2705-5066

 485

thermal anneal

104, 201, 205, 229

thermal growth

149, 184, 215

thermal oxidation
hot carrier

76, 123, 377

104, 108, 159, 171, 173, 188, 202, 232, 238, 240, 244, 281, 371, 421,

456
hot carrier effect

108, 159, 171, 173, 188, 202, 232, 240, 244, 421

hot electron injection

353-354, 371

thermal budget

186-187, 215, 236, 238, 242, 247, 271, 334, 365

thermal process

184, 186

thermal noise

332, 343-344, 456

thermal stability
epi-wafer

251, 276, 278, 285

223, 228, 233-234, 248, 265, 268-269, 333

Zener breakdown
encoder

61-62, 66

304, 402

linear region

127-130, 134-138, 144, 152, 165, 167, 171-173, 232, 457

impact ionization 62-63, 65, 66, 262

polycrystalline silicon poly-Si

76, 97, 111, 116, 258, 277-278, 280-282,

285
mass-action law
screen oxide
mobility

7, 13, 24, 33, 53

198

14-15, 25, 63, 130, 133, 137-138, 140, 149-153, 159, 162-163, 165,

223-224, 226, 228, 231-233, 264, 266-267, 272, 277-280, 282, 293, 295, 322-323, 343
mobility degradation

140, 149, 165

noise

232, 249-250, 333, 336, 338, 343, 345-349

noise isolation

232

conduction band

2-8, 10-14, 30, 61, 77, 81, 97, 107, 140, 172

244, 249, 439-442, 467

mechanical stress

226

352

hydrophilic

252

output characteristics

127-128, 131-133, 135, 152, 158-160, 162, 175, 177,

179, 323
selectivity

193, 203, 215, 244, 251, 282

14
random access

369

www.wunan.com.tw
(02)2705-5066

486

Video on Demand

399, 403

Staic Random Access Memory; SRAM

352, 356, 386

stress

191, 195-196, 225-227, 247, 265, 269, 286

223-224, 259, 265-270, 272, 286

strain relaxation
wet oxidation
wet etch

271

185, 215

192-193, 215, 282

ring oscillator
guard rings

326-327

347

spike annealing 242

phosphosilicate glass PSG
threshold voltage

103, 207, 213

85-86, 88-89, 91, 94, 97, 104, 109-112, 117, 124-128,

137-140, 143-145, 147-148, 152-153, 158-159, 166-170, 172-173, 179, 185, 188, 221,
230, 233, 236-238, 243-244, 255, 262, 277-283, 285, 293-294, 300, 331, 340-341, 353,
362, 367, 373-374, 376, 389, 415-419, 423, 426, 431, 462, 466-467
threshold voltage roll-off
Vt stability

281, 285

thin film deposition

spiral inductor

158, 166-168, 179, 423

184, 194

339

adhesion layer 208, 212

adhesion 196

diffusion 14, -20, 24-25, 30-32, 42, 49, 51-52, 59-60, 68, 70, 103-104, 108, 132,
140, 167, 184-187, 194, 196, 201, 205, 208, 212, 232, 238, 242, 245, 251-253, 258,
270-271, 277-278, 282, 292, 321, 334, 371, 425
diffusion length

49

diffusion coefficient
diffusion current

18-19, 24-25, 31-32, 51-52, 59-60

diffusion capacitance
sputtering
Blue Tooth

18, 24-25, 140, 232, 270-271

42

104, 195, 205, 208, 247, 253

395-396, 399, 409

transfer characteristics
transconductance

132, 136-139, 144, 152

137-139, 416

www.wunan.com.tw
(02)2705-5066

 487

Phase Locked Loop; PLL327-329, 405

ion implantation 68, 104, 108, 123, 126, 148, 176, 184-189, 191, 215, 236,
242, 300, 371, 375, 429-430
implanter 198
noise 230, 232, 290, 318, 325-327, 329-330, 332, 343-348, 366, 368, 389, 402,
404, 456-457, 468
noise meter

457

noise 343, 345, 346

dopant activation

186, 199

161, 322-323, 332-333

dual- damascene process

210, 215

exposure 190-191
post-exposure bakePEB

190

142, 152
critical dimension, CD
analog

189

143, 232, 263, 290, 301, 318-321, 326, 329, 331-332, 334, 336-338, 343,

347, 349-350, 356, 386-387, 389, 394, 396-397, 401-403, 405, 418
ADC 319, 336, 405
dangling bonds

99, 107-108

SAC Oxide

198

passivation

103, 108, 195, 213-215

drive current
Fin-FET

142, 147, 166, 266, 273

273

stack contact/via

438-439

Logic

11, 122, 127, 141, 160, 221, 247, 274-275, 290-292, 294-302, 305-308,

310-315, 318, 328, 347, 352, 356, 365, 368, 371, 386, 389, 394, 403

www.wunan.com.tw
(02)2705-5066

488

development 190-192, 196

alkali metal ions

102-104, 117, 207, 213

www.wunan.com.tw
(02)2705-5066


,
. ., 2011.09

I S B N 978-957-11-6374-1
1.
448.65

100014717

5D75

()
Semiconductor Device Physics and
Process: Theory & Practice

347.1 258.4

106 339 4

(02)2705-5066

http://www.wunan.com.tw

(02)2706-6100

wunan@wunan.com.tw
0 1 0 6 8 9 5 3

/ 6

(04)2223-0891

(04)2223-3549

/ 290

(07)2358-702

(07)2350-236

2006 1
2006 11
2011 9

650

(02)2705-5066

www.wunan.com.tw