Professional Documents
Culture Documents
1
...........................................................................................................3
1.1 ....................................................................................................................3
1.2 ..................................................................................................8
1.2.1 ............................................................................9
1.2.2 .................................................................................................. 11
1.2.3 ........................................................................................... 16
1.3 ........................................................................................... 17
1.4 .................................................................................................. 20
1.5 ........................................................................................... 25
.................................................................................................... 28
2.1 ...................................................................................... 28
2.2 ................................................................................ 31
2.3 ............................................................................................................. 33
2.3.1 ...................................................................................................... 33
2.3.2 ................................................................................ 39
2.4 ............................................................................................................. 42
2.4.1 ................................................................................ 43
2.4.2 .......................................................................................................... 44
2.4.3 ....................................................................................... 47
2.5 ........................................................................................... 51
2.5.1 ...................................................................................................... 51
2.5.2 .................................................................................................. 52
2.5.3 ...................................................................................................... 53
2.5.4 ............................................................................................... 53
2.5.5 CCD .................................................................................. 53
2.6 .................................................................................................. 55
2.7 ........................................................................................... 58
2.8 ......................................................................... 62
2.9 ....................................................................................... 63
2.9.1 ......................................................................... 65
Fig. 1-18............................................................................................................ 85
9
1
FIB
3
4 5
6
9
7
(EBSD) LVSEM/
ESEM
8
1.
2.
3.
1.1
0.1
0.1
1 1 O L S
O' AB
O'
Airy disk . 1 2
3
a 84%
O r, r',
r O r' O'
r O
Rayleigh
19%
d
d 1 2 b
d
(Resolution).
1-2 Airy a b
d
4
1 1
l ; a ; n
NA nsin? , (1-1)
1 2
1 2
1 1 1-2
90 NA 0.95
4000 8000 4000A n
1 ,
1 3
n=1.66 , d~1/3 l 1300
2000
2500 2000
X
1 X
X X
1 4
h 6.626 10 -34 . Plank ' s constant
m ; v
500 V , 1 4 m
m 0 m 0 9.109 10 -31 kg 0
V eV
1 5
1 4 1 5
1 6
m 0
1 6
1 7
V l ?
100-200kV
1 8
1 4 1 8
1 9
1 9
1 10
V l c 3 10
8 m /s 1 1
1 1
(kV)
()
100
0.0370
200
0.0251
300
0.0197
1000
0.0087
100 0.037
4000~8000 10 100
~0.02 100 2
1000 1
100
7
1000
1.2
(1)
2 60
100
3
1-11
F e H
1.2.1
H z
H r
v H 1
11
V H
1-12
H 1 3
z
(1-13)
H
1-14
1-15
(1-16)
10
1 3
1-16 P
P z E
E
1.2.2
, H H z
H r H z H r
(1-17)
H z 2n
H z 2 H(z)
=
1-18
z 2n+1
z 1
11
z 3
r r
1 19
1 20
1 4
A P
P v v z v r ,
v z H r F
H z v r
v t
H z v t F r F r
H r v r v r H r Hz vr
v t
v t v t F r
F r
H z
z B A
v t
90
F F r
1-4
12
1-4
1-21
1-22
m V z V
1-22
+ e m H
V :
1-23
13
H z
H z H z
1 5
1-24
1-5
1-24
a b H
a b +
14
P B f b B P f 0
1-25
1 23 1 25
R I H z
1-26
1-26 1 25
N NI I
1-27
Hz z z 2R
1-25
15
f Hz Hz f
H f
1.2.3
Polepieces
1-6
1-6 a
1-7
Gap ,
Polepieces
bore bore-to-gap-ratio
16
1-8
/ (Sample holder
1 7
1.3
17
1-8
(1-28)
P B f M
(1-29)
18
P P M
P 2
M 1
P 2
1
250mm 0.2mm ( 0.1mm )
0.2mm
19
1.4
r dr/dE
~2 0.02
Spherical aberration
20
1 - 9
1 9
O' O' N N
N N
N
O
M M
(1-30)
d s
< 1mm
~ 3mm
~ 0.3mm
~10 -3
2
21
Distortion
1 - 10
1 10
110a ,
1 10b
1 10c
1 10c
1 10d ,
(Astigmatin)
22
1 11 y
O x 1 x 2
y y 1 y 2
O
x 1 x 2 y 1 y 2 y
x x yx
x 0
y 0 D f A x 0 y 0
y
1 - 11
(Chromatic aberration)
1-12 r
m f
23
1-25
(1-31)
I I
(1-32
(1-33)
f r i
(1-34)
C f
f
1-35
24
210 6
1 - 12
9.10
1.5
(1-1)
90
25
n 1 2 3 5
(1-36)
(1-37)
(1-38)
1 38
26
(1-39)
(1-40)
0.037 Cs
0.88mm r min 2 opt 10-2
f 1.7mm 34m
1000
C s ~ 3mm r min ~2.5-3
C s < 1mm r min ~1.4-1.8
1 2
1 2
~1000
~2
~2000
27
1.
2.
3.
2.1
1924 Brogliel De
1926-1927 Davission Germer
28
Thompson Reid X
1926 Bush
1931-1933
1934
500 1986
1939 100
1954 Elmiskop 10
1935 1946
EM 1944
Philips EM CM
1977 3 80
29
1949
1949 Heidenreich
Bollnan Hirsch
Hirsch
Cowley
Moodie
1nm
30
2.2
31
2-1
2-2
32
2-1 X
EDS EELS
X
2.3
Illumination system
10 5
2.3.1
Electron Gun
2-2
2-3
33
LaB 6
FEG Field Emission Gun
2.3.1.1
2-3 2 -4a LaB
6 2-4b LaB 6
2 3 a (b)
2 4 a LaB 6 b
34
2-5
Filament 0.03 -0.1 V
Wehnelt
Anode
2 5
35
d 0
Gun cross-over
2.3.1.2 FEG
0.1 m
2-6 LaB 6
100 FEG
FEG
36
2 6
FEG FEG FEG
FEG
W 310
0.3-0.5eV
FEG
1600-1800K
0.6-0.8eV FEG
FEG
2-1
2-1
FEG
ZrO/W(100)
W
(
200KV )/A ? 10 5
LaB 6
5
10 6
00)
5 10 8
5 10 8 10 8
cm -2 ? str -1
37
50
m
10
0.1 1 m
10
10
100nm
100nm
2.3
1.5
0.6 0.8
0.6
0.3
0.8 0.5
/eV
10 -3
10 -5
10 -7
10
10 -8
1,6
300
20
20
-7
/Pa
2,800
1,800
1,800
/K
00
20
100
/ 100
100
100
/h
1 /h
/h
/h
/15min
100
100
10
10
38
2.3.1.3
2.3.2
2.3.2.1
2-7
Condenser lens C1
C2 C1
Gun Cross-over C2 C2
C2
C1 C2 C1
39
2 7
2-7 2-7
a Condenser mini-lens CM
TEM 2-7 b
1
EDS 2-7 c
2
Nano-beam Electron Diffraction NBD
EDS NBD
40
2.3.2.2
Deflection Coil
beam tilt beam shift
beam scan
2-8
2 8
2 DEF1
1 DEF2
1 2
DEF1 DEF2
DEF2
DEF1 DEF2
2
41
2-9
2 9
2.4
(Imaging System) Objection Lens
Intermediate Lens Projector Lens Objective aperture
selective area diffraction aperture 2-10(a)
42
2-10 a b
2.4.1
1906
2-10(b)
L
S 2 S 1 S 0 S 1 S 2
I 1 I 0 I 1 O 1 O 0 O 1
O 1
I 1
43
2.4.2
100 200
2-11
2 11 JEM 2010F
44
2-13
10-50m
2 12
45
2 13
2-14 a O O ,
O i i M 0
M 0 O
D P 1 P 2
D D
2-1
46
2 1
210 -3 10? D 1
1 10?
1
2-14
b Ds
2-2
100-200 2-2
10 4 1
10 -3
5? 10 5 2 2
10000
2-14 b
2.4.3
0.2 2?
0.2mm /2? 10 6
5-10
10
47
M I 0-20
( 2 15a )
( 2-15b)
2-3
M 0 M I M P M
0 100 M I 20 M P 100 M 10020100 210 5
M 0 M P M I 1 M 1001100 10 4
1 1
M I 1 2 15a
10 4 10 5 M I 1
2 15c
48
10 -5 ,
2-15
0-20
2-15
100
20 2-15 (a) 20
100
20
100
20
49
2-15 b
10 3 210 5
<1
2-15 c
100-10000
10 6
2-16 50-100
50
2 16
2.5
CCD
2.5.1
ZnS 450nm
550nm
51
CCD
2.5.2
25
10
4-5m
10cm 10cm 10 7
0.1-10
0.5-2
52
10m
2.5.3
Image Plate X
BaF Br I Eu 2+ [BaF(Br,I):Eu 2+ ]
2.5.4
TV Camera
500 / 1000 /
10cm 10cm
2 10 6
2.5.5 CCD
53
CCD
CCD
2 17
CCD 1K1K 1K 1024
2K2K 4K4K CCD
4K4K CCD CCD
CCD
CCD
54
CCD
CCD
2 18 CCD
2.6
3mm
3mm
Sample holder
2-19
55
X
2-20
2-19
56
2-20
Single-tilt holder
Double-tilt holder
X X
heating holder
Cooling holder 2-21
1300
-195.8 -180
-268.94 -250
57
2-21
2.7
10 -7
torr 1 1 1.32 10 -3
58
Pa 1Pa 7.5 10 -3
UHV TEM 10 -9
10 -11
Mechanical pump 10 -3
(ion pump)
2 1
TEM
-10 -2 Pa
(RP: rotary
pump)
TEM
(DP: oil
diffusion
10 -1 -10 -8 Pa
pump)
TEM
(SIP:
10 -2 -10 -9 Pa
sputter ion
pump)
(TMP:
10 -2 -10 -8 Pa TEM
turbo
molecular
pump)
10 -2 -10 -13 Pa
(CP: cryo
60
pump)
2-22 FEG
JEM -2010F
SIP: sputter ion pump 15 l /s
SIP 60 l /s
3 10 8 Pa
150 l /s SIP
3 10 5 Pa
contamination
SIP
10 -7
61
2.8
2-3? 1 10 -6 /
2 10 -6 /
62
2?
vibration-free
2.9
(Alignment)
63
1
2
3
4
5
6
1
A ;
B ;
C ;
2
A.
64
B. ;
C. ;
D.
2.9.1
2.9.1.1
LaB 6 15
m A
15 m A
B
65
2-23 LaB 6
X,Y
2-23 LaB 6
X,Y
2.9.1.2
X,Y
X,Y
66
2.9.1.3
2,3
X,Y
X Y 2-24
2-24
a b
67
2.9.2
2.9.2.1
high voltage wobbler
X,Y
2-25
2-26
68
2-25
2-26
2.9.2.2
69
A
10
X,Y
B
20
2-27
2 27
CCD
CCD
70
2.9.2.3
X,Y
2.9.2.4
X,Y
TV
2.9.3
A
image wobbler
71
2-27
B
20
2-28
Scherzer
2.10
TEM
100-200kV 50-100nm
150 ? ,
72
2-28
a b c
:
(powder)
73
thin foil
(Replication)
thin foil
cross section
thin foil
2.10.1
3mm
grid,
, 2 29
2 30
74
3mm
2 31
2 29 grid
2 30
75
2 31
2.10.2
3 mm
thin foil .
100-200
F 3mm
3mm 1
3mm
3mm
76
2.10.2.1
200 m m
Si, GaA 3 , NaCl, MgO Diamond
Wafering Saw 2 32 200 m m
2 32
2.10.2.2 F 3mm
mechanical punch 2 33 F 3mm
Ultrasonic drilling 2 34
3mm F 3mm
77
2 33
2 34
2.10.2.3
/ / ,
1 2
20
(tripod polisher 2 35)
1
78
3 1 m m 3 m m
2 35 (tripod polisher)
Dimpler 2 36
10 m m
2.10.2.4
A
79
a b
2 36 Dimpler
2 37
2 37
0.1 0.2mm 3mm
,
80
K K a
halo ring
Hirsch P.B, et al Electron
Microscopy of Thin Crystals. London Butterworths, 1965, 455
10 20
2 38
200
81
F 3mm
2 38 6 kV
2.10.3
(Ultramicrotomy )
100nm
82
2 39
2 39 A (B)
2.10.4
r eplication TEM
83
2 40 A
C Cr Pt
C Cr Pt (B)
TEM
B.
84
2 41
2
3
2 41
C C
TEM
2.10.5
Fig. 1-18
Cross-section specimen
,
85
2 42
2 42
2.10.6
Focused Ion Beam FIB
Ga
30kV 10A /cm 2
2 43 a FIB
2 43 b FIB Si
Si
FIB
FIB 2 43 c
FIB Ga Ga
FIB
2.10.7
10 3 10 4 Pa
2.10.8
2.10.8.1
/
TEM
87
2.10.8.2
88
(c)
2-43 (a) FIB TEM
b FIB Si c
FIB JEM-9310FIB
89
AEM
3 1
90
3-1
3.1
1
91
3-2
a
3 2
3 1
3 2a
q r, r q
92
3 2
3 1 3 2
Z Z
3 3
r N A A V
Z q t 3 3
t Z V
X 10 3 10 4
X
93
X
X 10 6 10 8
X Bremsstrahlung
X-ray
3.2
X Charactreristic X-ray
94
3-3 K L
X
X 3 3 Z
(Criticalionization energy Ec ) E c
X X EDS
EDS Z 3 4
2 Secondary Electron
(E<50eV)
510nm
STEM
STEM
95
(50200keV). X
X
(Backscattered Electron)
nm
4 (Auger Electron)
K
( 3
4)
X eV-
keV 1
AES AES
UHV Auger/STEM
5 Cathodoluminescence
3 5
96
CL
STEM
3-4 L 1 K L 2
3
6
X
97
(EELS)
EELS
EELS X
3 .3 Beam Damage
1
2
3
98
1.
2.
3.
4.
5.
4.1
4.1.1.
(Electron Diffraction) 4 1
l d hkl hkl
4 1
Bragg , s Law 4 1 d hkl
l n=0,1,2,3
n
99
hkl n
n nh nk nl
(4-2)
4 2
4 3
X X
100
q
100 200kV, 10 3 nm
10 1 nm 4 2 q 10 2 rad
< 1 .
4.1.2. Ewald
1
Reciprocal lattice
4 4
4 5
O * (hkl)
101
4 6
(hkl)
4 7
2 (hkl) (hkl)
102
O 1 1/
A,O,G Ewald Sphere
O 1
(hkl) O 1 G(
G hkl
(hkl) O 1
G K 0 K g
(fcc) 100
F
A O
4 8
f j r j j
4 9
4 10
4 11
104
4 9 4 10 4 11 4 8
4 12
F hkl
4 13
F hkl =0 ,
Kinematically forbidden
reflections
(fcc)
105
F hkl =f[1-1+1-1]=0
2 bcc
bcc (000),(1/2,1/2,1/2)
4 12
h+k+l
F hkl =f[1+1]=2f
h+k+l
F hkl =f[1-1]=0
I=0
hkl
4.1.4
( 4 4) z
xy z N z
t=N z c c z
107
4 14
F
(excitation error)
4 15
108
4 16
N z c
s=0 2/(N z c)
N z c
Ewald
x y z N x N y N z
4 17
109
4-5
4 18
s x s y s z
2/N x a 2/N y b 2/N z c
4 6
110
4.1.5
111
4 7 L
G ,O
G r
, tan2 2 ,
2dsin = ,
rd=L 4 18
d l
L
L L
camera length
4 18
L r 4
18 d 4 18
4 18
Ewald 1/ l Ewald
Ewald L
4.2
112
Ewald
4.2.1
[uvw]
[uvw] 4 8 h 1 ,k
1 ,l 1 h 2 ,k 2 ,l 2 h 3 ,k 3 ,l 3 hkl
[uvw]
(uvw) *
(hkl)
4 19
4 19 Weiss zone
law
(uvw) * [uvw] . (uvw) * ^ [uvw]
[uvw] hkl
(uvw) * h 1 ,k 1 ,l 1 h 2 ,k 2 ,l 2 [uvw]
[uvw]
113
4 20
4 21
(uvw) *
1 hkl (uvw) *
h 1 k 1 l 1 h 2 k 2 l 2,
h 1 +h 2 k 1 +k 2 l 1 +l 2 h 1 +h 2 k 1
+k 2 l 1 +l 2 (uvw) *
2 h 1 k 1 l 1 h 2 k 2 l 2 h 1 +h 2 k
1 +k 2 l 1 +l 2
114
( 4 8)
(uvw) *
4 8
(3) F=0
(4) (uvw) *
h 1 k 1 l 1 h 2 k 2 l 2
90
(321) *
1 h 1 k 1 l 1 =
[321] h 2 k 2 l 2
h 2 k 2 l 2 =
h 2 k 2 l 2 =
3
115
4 9
5 (321) * 4 9
(321) *
116
4.4
4
hkl (hkl)
Ewald
( 4 15)
4 15
(4-18)
(4-18) r
d
4 23
117
L l
4 24
4 24 r d
4 24
4 25
4 26
4 24
4 27
4 28
4 28
r 2 4 28
4 28
118
(F=0) N
fcc hkl F
hkl
(111) (200) (220) (311) (222) (400) 331 (422)
N 3 4 8 11 12
16 19 20
bcc h+k+l F
hkl
(110) (200) (211) (220) (310) 222 (321)
N 2 4 6 8 10 12
14
N 1 2 3 4 5 6
8 9 10 N 7 N 3
8 11 16 19 24
4 17
N N
4 16 N
119
(4-29)
M h 2 +k 2 , l 0 r
(4-30)
(4-31)
P h 2 +hk+k 2 , l 0
r
(4-32)
r hkl
4.4.1
120
a)
b)
c) {hkl} ASTM 4
17 d
d)
121
4 17 TiO 2 ASTM
Fe ( ) 8.42mm
r(mm)
N hkl d( ?)
(mm ?)
16.96 mm ?
a)
122
b)
c)
d) d ASTM
d
17.00mm ?, 8.42mm
r(mm)
N d( ) I/I 1 ( ) d( ) I/I 1 ( )
N bcc d=
/r d=2.0-2.5 ?, ASTM
Fe
Fe
123
4.4.2
L
L L
L
1 TlCl , a=3.842 ?
2) Au a=4.041 ?
3) (Al) a=4.041 ?
=18.74 mm .
l L
124
4.5
4.5.1
O *
Ewald
Ewald (1/ l ) , O *
Ewald O *
Ewald
r=[uvw]=ua+vb+wc
(hkl)
[uvw] O * (uvw)
* 0 0 O * "
"(Zero Order Laue Zone ZOLZ), [uvw] (uvw) * 0
[uvw]
hu+kv+lw=0
[001] (100) (010) (110) (120)
hu+kv+lw=N(N )
N (High Order Laue Zone, HOLZ)
hu+kv+lw=0
125
4.5.2
[uvw]
(hkl)
hu+kv+lw=0
O
r d
rd=
3 ) (uvw) o *
1
2
126
1
1
P 1 P 2 P 3
2 f
3 rd=L l
4 d d ASTM
{hkl} h 1 k 1 l 1 {111},
111
11 1
1 11
5
[h 3 k 3 l 3 ]=[h 1 k 1 1 l ]+[h 2 k 2 l 2 ]
6 hkl
127
7)
8 h 1 k 1 1 l
, h 2 k 2 l 2
[uvw] *
(fcc) (a=0.3523nm) 4 18
r 1 =13.9mm r 2 =5.5mm
r 3 =14.25mm f 1 =82 f =76 ( 4 19b) L l
1.12mm nm rd= L l d :d 1 =0.0805nm d 2 =0.2038nm
d 3 =0.0784nm ASTM d {331}
111} {420}
4 18 a b c
128
(h 2 k 2 l 2 ) (111)
(h 1 k 1 l 1 )+(h 3 k 3
l 3 )=(111) h 1 k 1 l 1 h 3 k 3 l 3
h 1 k 1 l 1 =
, (h 3 k 3 l 3 )=
4 19c [uvw]
2
P 1 P 2 P 3
rd=L l
4)
, ASTM d i
{hkl}
129
5)
6) ASTM f
7)
ASTM
A N=2 A
{110} A
130
90 o A B
B (002)
A
B (002) C
,
A C 57.74 o , 55 0 C
[uvw]
4 19 a b
2
rd= l L
d A =1.99 ? d B =1.41 ? , d C =1.15 ?
ASTM a - Fe d
d A {110},d B ={200},d C ={211},
131
d a - Fe a - Fe d
A B C
AB 90 o AC 54 .7 o ,
A B C a - Fe
a - Fe
[uvw] [220]
[uvw]= [110]
4 20 180
hkl ,
180 ( 4 20)
180 180 o ambiguity 180
(Burgers) 180
132
[uvw]
[uvw]
[uvw]
[001] (100) (010) (110) (120)
[u ' v ' w ' ]
(u ' v ' w ' ) * (uvw) * (u ' v
' w ' ) *
Ewald
1 Ewald Ewald
Ewald
4 21
133
4 21 Ewald
2)
Ewald
3)
Ewald
4)
Ewald
Ewald
s s
s s
Ewald s
134
Ewald s
4.6
4.6.1 .
135
4-23 A B
Ewald C hkl
ADF D
E Ewald
000 000 hkl
000 hkl
4 p
hkl (hkl)
136
Ewald
(diffused ring) ,
[uvw]
4.6.3
137
4 24 h 1 k 1 l 1 h 2 k 2 l 2 h 3 k 3 l 3
h 1 k 1 l 1
h 2 k 2 l 2
h 3 k 3 l 3
h 1 k 1 l 1 h 1 k 1 l 1
h 1 k 1 l 1
4 24
4 25 , [001], z
000 010 100 110
138
4 25
h 1 k 1 l 1 h 2 k 2 l 2
4.6.4
hu+kv+lw=0, Ewald
(uvw) 0 *
Ewald (uvw) * Ewald
hu+kv+lw=N N=0, 1, 2. 4 42
N=0 (Zero-Order Laue-Zone, ZOLZ )
N 1 0 Higher-Order Laue-Zone HOLZ N
139
4 26
4 26
4 27
4.6.5
140
(1000-1500?)
(Kikuchi lines) 4 27
4.7
141
CRISP
Calidris PC TEM
FFT
DIFPACK
Gatan Macintosh Digital Micrograph
142
Digital Micrograph
Gatan Macintosh CCD
GIF TEM
Mac Tempas
Total Resolution Macintosh ,
Mss Win32
JEOL PC
TriMerge
Calidris PC
TriView
Calidris PC TriMerge
143
1.
2.
3.
5.1
144
5-1
a b
5.1.1
5-1 ( )
[uvw] 60 90 120 180
180
{111} (111)
{112}
145
180
hkl [HKL]
hkl T M
T hkl T (
5 2) hkl T
h t k t l t
h k l
h t k t l t (HKL) [HKL]
5 2
[HKL] HKL
[hkl]+[h t k t l t ]=n[HKL] 5 1
5 2
146
5 2
HKL=111 HKL=112
5 3
5 3 5 2 5 3
5 4
5 3 5 4
5 5
5 6
5-6 5-2 h t k t l t :
147
5 7
(5-7) a=b=c 5 6 5
7
5 8
5 9
{111} [HKL]=[111] 5 8
5 9
148
(5-10)
a Hh+Kk+Ll=3N N=0 1 2 3
5 11
5 12
Hh+Kk+Ll=3N hkl
HKL 2N h t k t l t
5 1 HKL=111 hkl
t k t l t
149
Hh+Kk+Ll=3N N=2 5 12
h t k t l t 600
600
Hh+Kk+Ll=3N
b Hh+Kk+Ll=6=3N 1 N=0 1 2 3
5 10
5 13
5 13
[HKL] 1/3
5 2 HKL=111 h k l =
t k t l t
Hh+Kk+Ll=1 3N 1 3N 1 N=0
5 13
150
Hh+Kk+Ll 1 3N 002
2
{112} [HKL]=[112] 5 8
5 9
5 14
a Hh+Kk+Ll=3N N=0 1 2 3
5 15
151
hkl
N<112>
5 3 HKL=
h k l =
h t k t l t
Hh+Kk+Ll=0 3N N=0 5 15
b Hh+Kk+Ll=3N 1 N=0 1 2 3
5 16
[HKL] 1/3
5 4 HKL=
hkl (011) h
t k t l t
N=0 5 16
152
011
[HKL]
<111> <112>
1/3
5 10 5 14
[ 111
[ 112
211
] 12
121
] 16
( 5 3 )
1987
153
5-3
(uvw) *
154
[uvw] 5 9
5 17
HKL [uvw] [u
t v t w t ] [uvw]
HKL [u t v t w t ]
2 (uvw) * (u t v t w t )*
(u t v t w t )*
3 (uvw) * (u t v t w t )*
5.1.2
M 23 C 6 5 4 a 80
200 400
600 111 222 333
{200} {111} 54.74 80
111 200
200 5 4 b
151
5 4
155
b <111> 5 17 , [uvw]=
[u v w ]
[HKL] [111]
[u v w ]
[HKL]=
, 5 10
hkl
600 ?
151 ?
4(d
5.1.4
156
5 9
5 18
T
5 19
157
5 4 M 23C 6 (a, ) M 23 C 6
, (b, )
, (c, )
, (d, )M 23 C 6
5 5 024
hkl=024 HKL=
5 18 5 19
158
024
5 6
hkl=
111
HKL=111 5 18 5 19
111
1/3
5.2
5.2.1
hu+kv+lw=0
Ewald 1/ l
Ewald
159
Ewald
hkl
hu+kv+lw=N (N=0 1 2 3 )
N=0 N 1
0 N N N
5.2.2
5 5
160
5-5
5-6 a
b c
5
6
3
5 7
M 23 C 6 M 6 C
161
Ewald
5.2.3
162
5 8
hkl
hu+kv+lw=N (N=0 1 2 3 ) 5 20
(hkl)
5 21
5 22
5 23
163
5 24
L 5 8
5 25
5 21 5 24
5 26
164
5 27
5 21 5 23 5 27 5 26
hkl
h // k // l //
5 28
5 28 u * v * w * uvw
4 5
5 30
165
5 31
5 29
5 30 5 31
5 32
5 28
a=b=c a = b = g =90 5 32
5 28
166
5 33
hu+kv+lw=N
hkl uvw N
2) a=b 1 c a = b = g =90
5 34
hu+kv+lw=N
3) a 1 b 1 c a = b = g =90
5 35
hu+kv+lw=N
167
4) a 1 =a 2 =a a 3 =c
5 36
5.2.4
[uvw]
(hkl)
N
u+v+w= N= 1 2 3
u+v+w= N= 2 4 6
168
u v w N= 2 4
6
u v w N= 1 2 3
N 1 2 3
N hkl
hu+kv+lw=N (N )
h // k // l // 5 28 hkl
h // k // l // hkl
h // k // l //
5 7 (211) *
1 (211) * (211) 0 *
hkl
(211) 0 *
(211) 0 * 5
9a
hu+kv+lw=N N hkl
169
002
5)
x y
x=2/3 y=-1/2
170
002 (211) 0 * 5 9c
6)
002
( 5 9c )
171
TiC [112] Mo 2 C [
[310] 1.60
5 10
5 10
5-10
5.3
5.3.1
172
Kikuchi lines
> 1000?
5 11 a P P
P
511a PQ PR P
hkl PR. PQ
R Q ( 511b)
RR' QQ' c R Q
c>1/2 5 11 b
RR' PQ
173
5-11 a
b c
QQ' PR
(hkl)
p /2- q
Ewald q
5 11(c) I PQ >I PR , C>1/2,
I QQ' - I RR' 2c - 1 (I PQ - I PR ) > 0
QQ' RR'
5.3.2
174
5 11(c) hkl
hkl
(hkl) (hkl)
0.1
OM 5 12
PM
PK 1 PK 2
hkl f q
R L , PM M
PK 1 PK 2 R* 5 12
5 37
q 5
38
5 37 5 38
5 39
5 40
5 39 5 40
5 41
2dsin q = l
175
(5-42)
5-12
R OM
5 42 d
5 42 f
hkl hkl
1 f 0 hkl
R=L l /d hkl
( 5 13a )
176
2 f q hkl
hkl 000
000 hkl
( 5 13b)
3 f
4 hkl hkl
5 (hkl)
[001]
000
6
3 o ,
L= 500mm 1 o , 8.5mm
0.1 o
7
hkl
177
5-13 a =0 b =
9 0.5
0.5 1
5 14
5 15.
5.3.3
178
f 0 f q f 0
f q
R
OM 5 42 d
ASTM
[uv w]
5-14
179
5-15
5.3.4
1
( 5-16)
5-16 a b a
180
3
5 17 a h i k i l i (i=1, 2, 3)
A B C
h 1 k 1 l 1 h 2 k 2 l 2 B
=[uvw]
(i=1,2,3) 3-3
5-17 a 3
5-17 b f i
181
5-18
f i
5 17 b
(5-42)
L OA OB OC 5-42
u v w
5 8 5 18
R L
182
311 19
58
[u 1 v 1 w 1 ]
[u 2 v 2 w 2 ]
[u 3 v 3 w 3 ]
OA OB OC
f 1 f 2 f 3
183
a a s a
L
5 43
a
20
184
3 s
s hkl 5-19 P
P ' s P
s s
000 s 5-19
s 0 hkl
B W
hkl
s a
s a
5 19 W B
185
a s<0 b s
0 c s>0
5 44
5 45
hkl
hkl [ hkl ]a
s s
[0001] [ 1l 1]
186
5.4
5.4.1 (superstructure)
AB
L10
B2
L12
5-20 AB
L12 L12
B2 B2
187
f j
h+k+l F hkl h+k+l F hkl
hkl
L12 B2
f f A f B
(fcc) Ni 3 Al hkl
(superlattice reflection),
fundermental reflection .
(bcc) NiAl h+k+l
5 21
5.4.2 (Long-period superlattice)
AuCuII
5 AuCu [1/2 0
1/2] 10 10
5 22
a,
La,
L
5 23a a
c c,
[0,1/2,1/2]
4 c 4c
188
5 23b ,
c,
1/4, 4c
5-21 A Ni 3 Al B NiAl A Ni
3 Al fcc fcc hkl
5-22
189
5 23 Au 3 Cd
AuCuII 5 22 a
a 10
(commensurate structure),
(incommensurate
structure)
190
5 24 d,
6
d d <d D 6d+
d , d
5-24 6 6
5 25 5 25 a Cu 3 Pd
M a 1/6.8
6.8a . 5 25 b Tl 2 Ba 2 CaCu 2 O 8
c c 2 a a
5.9
5-25 a Cu 3 Pd
b Tl 2 Ba 2 CaCu 2 O 8
191
1.
2.
3.
4.
192
1930
1950
contrast
I 1 I 2
C
6 1
5 10
193
6-1
6 2
10
6 2A
Z
contrast image , Z 6 2B ,
>10nm <10nm
6 1 Cr Mo
194
6 2
6 3 Si/Ge/ SiO2
6 3 A B Z contrast
195
6.1
6 4
Mass-thickness contrast
196
6 2
Z V e q
N
6 3
N 0
1cm 2 dt
dt
q 1cm 2 n dt
dn
6 4
197
6 5
t=0 n 0 6
5 t n
6 4
6 5
6 6
I 0 Q t
I Qt
Qt=1 I=I 0 /e ? I 0 /3 t
W
6 7
t
r t
I r t Qt=1
( r t) C
6 8
198
I 1 I 0 1 t 1 ,
Q 1 I 2 I 0
2 t 2 , Q 2
6 6 6 1
6 9
TEM 6 9
6 10
6 11
C 6 2 6 9
6 12
TEM
6 13
V q Z
t V
q q
199
6.2
6.2.1
diffraction contrast,
A B 6
6 A B A I 0
A I A =I 0
B I hkl
I B =I 0 -I hkl
A B (Bright
Field) hkl hkl
I hkl B A
(Dark Field) ( 6
7)
200
6-6
a (b)
6 7
(hkl)
201
6.2.2
s t
6 8
202
6 8
6.2.2 .1
I D
P 6 8
n
r n A
6 14
O A
O P
F g g
203
a( a ) A dz dz/a
6 15
6 16
6 17
P P
6 18
204
6 19
P
6 20
I g t s
6 20
t=0 ,
p /2( 6 9)
6 9
x g
q cos q ~1,
205
6 21
x g 100V
200 x g
(1) V C V C =a 3 =(4.089?) 3 =68.36? 3 a=4.089?
? 1 6-10 f(e)=5.41? F g = 4f
(e)=21.64?
206
6 10 f(e)
V=100kV l 0.037 ?
s=0
10
I g 6 20
207
6 20
6 22
6 11 I g
s I g t
6 11
n ,
I g =0
6 20
t I g s 6-12
s 0
... I g s 0
208
n 1 2 3... I g 0
6 12 I g s
6 13a
6 13 b
209
( 6-14)
6 13 a
(b)
t=n
t
210
6 14
6 15 O
B s 0 O
s s O
6 23 s 0 I g
s 0
I g 0 s
I g
I g 0
s
211
6 15
s 0
|s|
s 0
6-16
s 0
212
6 16 a b
6.2.2 .2
I T
I T =I 0 -I D
I T I D
I T
p /2
(extinction distance)
q cos q 1
213
6.2.3
2
3
4 Spinodals
5
6
214
6 23
6 24
z
t
6 25
, n
a A D
A D
n n 0 invisibility
criterion
1 A D
215
//
6.3
6.3.1 stacking fault
fcc{111}
216
fcc hkl a 2n
p 2/3n p n
a 2n p , exp(-i a )=1,
a 2/3n p exp(-i a ) 1 1
fcc
2/3n p
a)
6 17
6 18
g
6 17
217
6 18 40Mn2Cr4V
b)
AB 6 19
AB 1 2
AB
AB
6 19
218
c)
d)
{111} {111}
0 2n p ,
a 120 , a 120 , a 0
360 2n p
a 0 2n p
6 20 a
2 p
0 6 20 b .
6 20 c ,
6 21
219
6 20
6-21
t Z a
/
6 22 ,
220
6 22
6.3.2
(dislocation)
221
2 (screw dislocation)
( )
1
6 23 EF ABCD
z1 z2( 6
24), R f
z f 2 p
, R:b f :2 p ,
6-23 6-24 EF
x PP' MM'
,
222
n=0 a 0
a 1 0
n x A D
s x 6 25 s
x
D x D x~(
) s
6-25
2
223
R 1 R 2 R
3 0 hkl
D 6 26
S 0 S 0 > 0
D A C I(
)
(hkl) S ' S '
S ' > 0 S ' < 0
B S 0 + S ' > S 0 I B < I
S ' S 0 S 0 + S ' < S 0
D ' S 0 + S ' 0 I D ' =I max
S 0 < 0
224
6-26
6 27
S '
3-10nm ,
.
,
225
6 27
6.3.3
r O , r 0 e
226
6-28
6 29
6 28
6 29
6.3.4
227
6 30 a
D
6-30b
6 31
6 30
6 31
228
6 31 6 32 a
q 6 32(b) 6 32(c)
6 33
6 32
6 33 7.0%Al Ni
1 A B 2
229
6 33 B
6.4
6.4.1
180 0
180 0 f 180 0 f
6 34 MoO 3 [100]
230
f MoO 3
[001] <100> MoO 3
MoO 3 [100]
f 6 34 L f
f L 6 1
MoO 3 Philip CM200 f
C A
6 1
6.4.2
231
//
232
(111)
<110>
6 2 {111}
0 6 2
6 35 Al a
020 D E
200
D E D
E (b) (c) 6 3
200
(020)
0
233
6 35 Al
(a) (020); (b) (200); (c)
6.5
6 36
,
6 37
( h 1 k 1 l 1 ),
6 38 g 1 g 2
,
234
g D D=1/g g 1 g 2
g
6 36 GaAs CoCa
6 37
1
a 0
6 39
235
6 38
6 39
6 40
d 2
d 1
236
6 40
(2)
a a 6 41
6 41
237
6 42
6 42
3
6 43 C
238
6 43 (A) B C
4
6.6
1 s 1 0;
2 ;
239
s=0
t t I g
I 0
I 0 I 0
100kV
150 500 ?
s=0 t <100 ?
? 10
1/s s ? 0
?
I g
6.7
240
6 44
1
f 0 f g f 0 f g
6 26
0 6 26
dz 6 44
6 26
6 26
241
6 27
6 26
6 28
6 28
6 29
6 29
'
6 30
6 31
242
6 30
s eff s 6 30 6 20
(6-30) (6-31)
s eff s
(
s )
2
s=0
s=0
1/s ?
6 32
s=0
s=0
243
6 33
6 33
6 33
6 34
244
1 6 13 s=0
2
6 45 b s ? 0 I g
6 45
a
6 45 a b
6 29
245
6 35
6 26
6 36
6 37
6 36
6 38
6 38 6
38
s=0
246
247