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 www.wunan.com.tw
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LED
LED
LED
LED
LED LED LED

LED LED

LED LED 11
LED

LED LED
PIDA

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1. Light-Emitting Diode, LED
1.1SiC

2
2

1.2GaAsAlGaAs

1.3GaAsP

4
8

1.4GaP GaAsP

10

1.5GaN

14

1.6GaN p-n junction

16

1.7AlGaInP

18

2.

21

3. MOCVD

24

4.

26

5.

27

6. LED

29

6.1p-GaN

29

6.2p-GaN mesa

29

6.3p-pad n-pad

30

6.4

31

7.

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32

LED

LED
1.

38

2. LED

38

2.1

38

2.2

39

2.3

40

2.4

40

2.5

40

2.6

41

2.7Colorfulness

41

2.7

42

3. Color Temperature

42

3.1Color Rendering Index, CRI

44

3.2Color Rendering Vectors, CRV

44

3.3

44

4.

46

5.

47

5.1

47

5.2LED

47

5.3LED

48

5.4

48

6.

49

6.1

49

6.2

49

6.3

50

6.4

51

6.5

52

6.6

54

6.7

55

iv

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7.
7.1LED

57

7.2LED

61

7.3LED

64

8.

1.

68

2.

68

2.1 LED

68

2.2 LED

74

2.3 LED

75

2.4 LED

75

2.5 LED

77

78

LED
1. LED

86

2. LED

89

3. LED

90

4. LED

93

5.

65

LED

3. LOGO

57

100

1.

102

2.

103

3.

107

4.

108

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LED

5.

109

6. PN

111

7.

112

8.

114

9.

115

10.

117

11.

118

12.

119

12.1 LED

119

12.2
123

12.3

123

12.4

124

12.5

125

13.

127

LED
1. LED

130

2. LED

132

3. LED

135

1.

144

2. SNELL

144

3.

149

4.

150

5. LED

152

6.

154

7. LED

155

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8.

156

9.

157

10.

159

11.

160

12. LED

162

12.1

163

12.2

164

12.3

165

12.4

168

12.5

170

12.6

173

13.

174

13.1

176

13.2Power Factor PF

176

13.3 THD- total harmonic distortion

176

14. LED

177

14.1

177

14.2

179

14.3

179

14.4

179

15.

180

16. lead frame

181

16.1

182

16.2Ceramic

184

16.3silicon

185

16.4

185

16.5

186

16.6eutetic

186

16.7wire bonding

187

16.8encapsulate

188

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LED

17.

188

1. Phosphor Converted White
Light-Emission Diode; pc-WLED

190

1.1 LED

190

1.2 LED

191

1.3 LED

191

2.

194

2.1host lattice

195

2.2activator

197

2.3sensitizer

197

3.

198

3.1fluorescence and phosphorescence

198

3.2 Stokes shift

200

3.3Concentration Quenching Effect

200

3.4Thermal Quenching Effect

201

4.

203

4.1

203

4.2YAG

204

4.3silicate

206

4.4-SiAlON

209

4.5LuAG

210

2+

4.6Sr2Si5N8:Eu

2+

4.7CaAlSiN3:Eu

5.

211
213

214

5.1 LED

214

5.2 LED

215

6.

218

viii

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6.1Lumiramic Phosphor Plate

218

6.2

220

7.

222

LED
1. LED

224

2. LED

226

3.

230

4.

232

5. thermal resistance

235

6.

236

7. LED

238

8.

243

1.

246

1.1SpectrumVisible Light

246

1.2

248

1.3

250

1.4

254

2.

260

2.1

260

2.2CIE-XYZ Colour Coordinator

261

2.3CIE-UCS

264

2.4Purity and Dominate Wavelength

265

2.5Colour Temperature Correlated

Colour Temperature
2.6Colour Rendering

266
268

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2.7

269

2.8

270

3.

272

LED
1. LED

274

1.1

274

1.2

275

1.3

275

1.4 LED

276

1.5

277

1.6

277

1.7Ra

278

1.8

278

1.9

279

1.10

280

2.

280

2.1

280

2.2

281

2.3

281

2.4

282

2.5

282

3.

283

3.1

283

3.2

284

3.3

285

3.4

285

4.

287

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291

301

LED

301

LED

309

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1. Light-Emitting Diode, LED

2.
3. MOCVD
4.
5.
6. LED
7.

(02)2705-5066

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1. Light-Emitting Diode, LED

1.1SiC
20 SiC
LED
SiC

1907 Henry Joseph Round LEDs

Round
117
- LEDs

1.1 1.1 (a)

(b)(c)
n
tunning effect
n
p-n
Round 1907 10 110

valence bandconduction band

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1-1

EC
EF

hv

EV

(a)

(b)

(c)

1.1(a)(b)(c)

1928 Lossev -

Lossev
Lossev

Lossev
Lossev

1960 Loebner 1976

1960 Violin
1969 p-n
LED 0.005%Potter 1969
SiC SiC LED
1990 SiC LED

SiC LED 470 nm 0.03%

Edmond 1993 SiC LED
III-V LED

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1.2GaAsAlGaAs

1950 II-VI
LED SiC 1936 Destriauz
ZnS LED
III-V 1950
Welker1952 1953 1950 III-V

III-V LED
III-V GaAs bulk 1954 1950
GaAs
vapor phase epitaxy, VPE
liquid phase epitaxy, LPE p-n GaAs
870980 nmLED RCA
GEIBM MIT Pankove Berkeyheiser1962
Pankove Massoulie1962 Hall 1962 Nathan 1962
Quist 1962
IBM Thomas J. Watson Yorktown
Heights 1960
IBM Jerry WoodallHans RupprechtManfred
PilkuhnMarshall Nathan
Woodall2000
Ge
n
injection laser IBMGE
MIT Rupprecht

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1-1

Rupprecht Marshall Nathan

Nathan
1962 Woodall Bridgman
Rupprecht
77K cw
Rupprecht 1963 Herb Nelson
RCA
300K
threshold current densityWoodall
p-n
donoracceptor

p-n
p-n -- 900C
-- 850C
900C n
850 C p
band tail
effectp-n 900980
nm 870 nm
1966

6%Rupprecht 1966 Rupprecht 2000

p-n

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IBM

GaAsPAlGaAsRupprecht
Woodall

3.6%

Woodall 2000

IBM Rupprech Woodall

Woodall
Woodall MIT

925C 850C
300 K
p-n 100 m
Rupprecht 19671968
AlGaAs GaP GaP GaP
AlGaAs AlGaAs GaP Al
LPE AlGaAs
Al Al AlGaAs Al AlGaAs
Woodall 1972
1.2


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1-1

n-type AlGaAs
AlGaAs
p-type AlGaAs
GaP

(a)

GaP

(b)

1.2(a)
(b)
Woodall 1972

Pilkuhn IBM Rupprecht GaAsP

Pilkuhn and Rupprecht, 1965
IBM
Pilkuhn, 2000

GaAsP

IBM 360
1.3

1.3 1964 IBM 360

360

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Rostky 1997 GaAs Texas

Instruments 1960
870 nm 130

resonant-cavity light-emitting diode, RCLED

AlGaAs/GaAs Schubert et al., 1992, 1994
RCLED
RCLED

GaAs/AlGaAs
AlGaAs/AlGaAs
GaAsP/GaAs
AlGaInP/GaAs

1.3GaAsP
1962 Holonyak Bevacqua
GaAsP Applied Physics
Letters
Applied Physics Letters p-n
Nick Holonyak Jr. 1962 General ElectricGE
vapor-phase epitaxy, VPE
GaAsP GaAs
Holonyak

Holonyak

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1-1

Holonyak GaAsP
GaAs
Holonyak 1963 GaAsP
Holonyak et al., 1963a P GaAsP
45-50% GaAsP
-Holonyak et al., 1963b, 1966; Pilkuhn and Rupprecht,
1964, 1965 300 K GaAsP 0.005%
P 44%Maruska and Pankove, 1967
GaAsP 1960 GE
260
Allied Radio
Rostky, 1997
Monsanto 1968
GaAsP
1968-1970
Rostky, 1997Monsanto
GaAsP p-n GaAs
Herzog 1969Craford 1972
Monsanto Hewlett-PackardHP
Monsanto GaAsP HP HP
1960 Monsanto
Monsanto GaAsP HP HP
GaAsP
HP GaAsP Rostky, 1997
1960 1970
Hamilton Watch
1972 Pulsar Monsanto HP

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Rostky, 1997
M. George Craford Monsanto
Craford et
al., 1972 GaAsP GaAs
Monsanto 1979 Craford
HP
GaAs GaAsP
Wolfe 1965; Nuese 1966
0.2% Isihamatsu and Okuno, 1989
Nuese 1969

GaAsP GaAs
GaAsP - GaAsP

1.4GaP GaAsP
1960 Ralph Logan
GaP GaP

Logan2000 Allen 1963

Grimmeiss Scholz1964 GaP p-n

10

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1-1

Sn n p GaP
Grimmeiss-Scholz
GaP
1.4 GaP
GaP
Thomas 1965
GaP

EC

EV
p = hk

1.4(a)(b) GaP
GaP

GaP 0.5 1 GaP

Ga P Ga P
GaP Grimmeiss Scholz
GaP
GaP
p n
GaP p-n Grimmeiss
1967 Logan Logan
GaP LED n-type GaP Zn-O GaP GaP LED 1

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1 Logan 400-725C
2%
Zn-O
1960 GaP
GaP LED
0.6% GaN GaP
p-n p-n LED
LED
IBMRCA GE
GaAsP IBM Thomas J. Watson Yorktown, New York
GaP Manfred Pilkuhn LPE
GaP 1.5 IBM brilliant red
light GaP p-n 1960
LED

Au wire

Soldered
contact
n-GaP
epilayer
p-GaP
substrate
substrate contact

1.5IBM LPE GaP LED p-n

brilliant red light

Pilkuhn GaP LED co-doping

12

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1-1

GaP GaP
GaP

Logan AT&T LED

110V
princess
1960
110V
LED
LED 110V GaP LED
50 LED Bell system
Ma Bell
Murray HillNew Jersey
600 Mountain Avenue
Logan GaP:N LED
Monsanto GaAsP
GaAsP GaP
VPE LED
p-n vicinity
LED GaP:N
LED
LED
GaAsP LED LED
LED LED
LED LED
70

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LED 1980

1.5GaN
1960 RCA
CRT RCA James Tietjen

Tietjen
LED GaAsP LED GaP:N
LED
1968 Paul Maruska Maruska
GaN LEDMHVPE
GaAsP LED III-V
1968
RCA
New Jersey RCA
RCA
Maruska GaN
GaN1930-1940 GaN
Ga sapphire
Lorenz Binkowski1962
Binkowski 1962 600C GaN
GaN Binkowski GaN
600C 1969 3 Maruska
GaN GaN
850C GaAs GaN
GaN GaN

14

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1-1

RCA GaN Laue

GaN Maruska
Tietjen, 1969
Maruska GaN n p
p-n GaP GaAs
GaN p
Maruska p GaNMaruska, 2000
1969 Jacques Pankove
Optical Processes in Semiconductors 1970 1
RCA GaN Pankove
GaN 1971 GaN
Pankove et al., 1970a, 1970b GaN
475 nmPankove n GaNp GaN
p GaN Pankove et al.,
1971, 1972--meal-insulator-semiconductor, MIS
GaN
RCA p
GaN MHVPE GaN 1972
430 nm 1.6
Maruska
Violet luminescence of Mg doped GaN
GaN p

Pankove RCA
Fowler-Nordheim Pankove and
Lampert, 1974; Maruska et al., 1974Tietjen
MIS

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1.61972 Maruska GaN GaN

1.6GaN p-n junction

Pankove GaN 1982

GaN Nagoya Isamu Akasaki
1989
p GaNelectron-beam irradition
Amano etal., 1989 GaN
post-growth anneal GaN
Nakamura et al., 1994aSchubert et al., 1996
p-n junction LED
GaN

p GaN GaN p-n junction

1992 Akasaki
16

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1-1

GaN p-n junction

1992 Karuizawa GaAs related compounds
LED 1% GaN

III-V
GaN Nichia
Nakamura GaN

two-ow organometallic vapor-phase epitaxy, OMVPE

GaInN 10%
Nakamura et al., 1996
Nakamura Fasol The blue laser
diode
1.7
1.8

1.7 GaInN/GaN

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1.8GaInN/GaN

1990 Nakamura GaN Nichia

Nakamura, Fasol
1997 1990
Cree Nichia

GaInN

15-100 lm/W 300 lm/W

1.7AlGaInP
AlGaInP 625
nm610 nm590 nm 1.9
AlGaInP

18

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1-1

1.9 AlGaInP/GaAs

Kobayashi Kobayashi et al., 1985; Ohba et al., 1986; Ikeda et

al., 1986; Itaya et al., 1990 AlGaInP
Ga 0.5 In 0.5 P AlGaInP/
GaInP GaAs GaInP 1.9 eV650
nm DVD

GaInP
(AlxGa1-x)0.5In0.5P x 0.53
600 nm
AlGaInP 570 nm

AlGaInP 1980 AlGaInP

p-n
Multiple
Quantum Well, MQWHuang Chen, 1997Chang
MQW Chang and Chang, 1998a, 1998b
Huang Chang distributed Bragg reflectors
Huang and Chen, 1997; Chang et al., 1997Kish Fletcher

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GaP Kish and Fletcher, 1997 AlGaInP

AlGaInP AlGaInP
Stringfellow and Craford, 1997; Mueller, 2000; Krames
et al., 2002

1.10

(Al x Ga 1-x ) 0.5 In 0.5 P GaAs Al Ga

590-670 nm(Al x Ga 1-x ) 0.5 In 0.5 As
InP Al Ga
900-1550 nmGaxIn1-xN
sapphireSi
sapphireSi

LPE
MBEHVPE
MOCVD MOVPE LPE
MBE
HVPE
um GaN MOCVD
2-6 60
MOCVD GaInN LED

20

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CCC China Compulsory Certication

trimethylgallium; TMGa25

CIE-XYZ Colour Coordinator261

tristimulus lter270

CNS CIE-

triplet199

Taiwan46

Mitsubishi Chemical213

CNVContingent Negative Variation45

droop181

ERPEvent Related Potential45

Mountain Avenue13

HRVHeart Rate Variability45

interference282

K K factor236
N N-type substrate119

n n-GaN27

Medium-Power Packages89

p p-GaN28

interface resistance122

pc-LEDphosphor converted LED; pc-LED

element semiconductor115

190
RGB RGB Multichip Packages
90
ZnSe92

build-in potential112
Intrinsic106
internal quantum efficiency
108, 175
princess13

Snell's Law179

distributed Bragg
reectors19

SiO2188

switching converter133

TiO2188

compound semiconductor

incident plane284

115
CMP31

reection283

trimethylindium; TMIn25

reection ray281

trimethylaluminum; TMAl25

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LED
National Institute for Materials Science;
NIMS209

photodiode array256
photo-diode detector256
apodization153

light beam281

active layer119

CIE D2-Measurement of Light

host lattice194, 195

power factor135, 176

UL Underwriter

LaboratoriesInc.46

and Radiation46
Photometry246
249
photocell270

semiconductor114

Luminous Flux38, 39, 250

Optical Processes in

light extraction efciency176

Semiconductors15

PIDA99

Visible Light246

photomultiplier tube, PMT256

The International

ray281

Commission on Illumination-Taiwan

optically inert195, 196

CIE-Taiwan74

Spot Diagram168

external reection286

Spectrum246

external quantum efficiency

Spectrophotometer256
total reection285

108, 175

resonant-cavity light-

mesa29
parallel light beam281

emitting diode, RCLED8

cubic204

eutetic186

Watt152, 250

covalenct bond116

white light-emitting diode;

Recombination104

WLED190

PCB- printed circuit board184

concentric light beam281

crossing point202
Alternating Curren88

multi-channel power
integrated circuits134
polycrystalline115

292

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Multiple Quantum Well, MQW
19

candela, cd251
refraction283

Extrusion241

refractive index285

Metal-organic

bandgap120

Chemical Vapor Deposition; MOCVD

intersystem crossing199

86

Angular Apodization159

Exciton105

angular apodization154

self-activated196

hybrid88

spontaneous Emission106
Self-heating237

Colorfulness41

acceptor5, 106

Colorimetry246

solid-solution221

Purity and Dominate

susceptor27

Wavelength265

active region132

color shift135

photopic255

duv270

Photopic vision248

color temperature, CT42, 266

buck-Boost converter133
boost power factor correction

circuit, Boost PFC140

threading dislocation26

boost converter133

Low-Power Packages89

injection laser4

low pass lter139

direct bandgap103

pulse width modulation

silicon, Si115, 185

135
Cold Cathode Fluorescent
Lamp; CCFL96
Uniform Chromaticity Scale
264
Uniformity168

silicon detector255
silicate206
silicone88
depletion region112
vicinity13
spatial apodization154

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Spatial Apodization159

activator; A194, 197

near eld152

Phase Diagram186

metal core229

correlated color temperature,

MCPCB- metal core

printed circuit board184

CCT42, 266
tunning effect2

metal base229

National Electrical

metal contact119, 121

Code74

wire bonding187

singlet198

--meal-insulator-

droop177, 178

semiconductor, MIS15

buck converter133

Lead Frame180
electron-blocking layer, EBL112

amorphous115

rigid200

nonradiative recombination

vibration202

center22

vibrational state198

density of nonradiative
recombination center177

Lambertian252
vapor phase epitaxy, VPE4, 8,
13

gas pressure sintering;

Luminance, Lv40, 252

GPS213

Illuminance Meter259
signal-to-noise ratio271

High-intensity discharge; HID

92

Connement Layer121

MgO269

window layer179

InGaAs4, 115

donor5, 106

GaAs4, 20

dye laser271

cascade excitation effect

Purkinje Shift249

216

poison201

defect116, 120

Lumen, lm38, 152, 250, 275

Illuminance276

294

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Energy Star74, 176

tungsten-lament lamp269

Bandgap102, 123

junction temperature, Tj225

energy gap, Eg111, 117

contact resistance122

barrier124

Daytime Running Light63

threshold current density5

Rods248

Reow186

liquid phase epitaxy, LPE4

coordination number; CN195

Generation117

icker177

heteroepitaxial growth21

High-Power Packages90

ZnS4

post-growth anneal16

BaSO4269

High Voltage88

Descartes' Law145
rst excited state198

duty ratio135, 136

photopic V() detector255

softer200

Side View Type97

transparent substrate179

epitaxial lateral overgrowth;

TSV- through-silicon vias185

ELOG24

CRT14

side view183

Ceramic184

local dimming96

Ceramic229

Commission Internationale

Top View Type97

de l'Eclairage, CIE260

top view183

The International Commission on Illumination CIE74

CB Certiction Body46

monochromatic256

base133

Monoclinic206

ground state198

single-crystalline115

band tail effect5

plug Efciency109

Intensity153, 158

wall-plug efciency175

color lter214

scattering model159

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heat sink181

function249

Snell Law145

Retina248

Stokes shift200

Fermat283

grain boundary116

indirect bandgap104

Lattice Constant102, 120

random number Generating

scheme159

grain115
wafer bonding179

uniform distribution
218

crystalline115
Cones248

Conductive Type237

SiN26

conduction band2

GaxIn1-xN20

bulk4, 115

GaN115, 120
Luminous Efcacy177

radiant efciency175

Scotopic248

Luminous Intensity, Iv40, 251

converging light beam281

phenomenon of luminescence

Photoluminescence177

198

temperature sensitivity

luminous point280

parameter; TSP236

Radiative Transition105

Illuminance, Ev42, 252

diverging light beam281

Luminance152

spontaneous Emission103

internal conversion199

insulator114

electron-beam irradition16

ultraviolet chip190

SMD-surface

UV-pumped
white light emission191

mount device180
arc-melting213

Fresnel's Equations
of Reection and Transmission147
apparent power137, 176
luminous efficiency or visibility

current crest factor132

charge-coupled device, CCD
256
Lead

296

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power integrated circuits
133
electromagnetic interference, EMI
132, 133
Injection Electroluminescence
103
zero voltage switching, ZVS
141

88
standard light sources269
CE Communate
Europpene46
Auger recombination178
Wetting186
pantone card43
thermal equilibrium238

voltage uctuation177

thermal resistance233

saturation region133

thermally active phonon208

thermal quenching201

Thermal Quenching Effect201

Extruded

conduction heat transfer227

patterned substrate179

convection heat transfer227

real power137

thermal conductivity184, 185

Convective Type237

epitaxy120

Color Rendering Vectors, CRV

Plastic State186

44

Recombination117

Color Rendering42, 286

co-doping12

Color Rendering Index, CRI44

P P A -

Polycarbonate; PC165

Polyphthalamide183

Helmholtz260

dimming135

far eld152

MTF: Modulation Transfer

remote phosphor218

Function168
conformal distribution218

screening201

valence band, VB2, 111

mobility116

sensitizer194, 197

MCPCB

Digit/Dot Matrix Display

cos176

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cosine 4th Law163

cyclopentadienyl magnesium;
Cp2Mg25

epoxy88, 186

conduction band, CB111

electrical conductivity114

slug235

AlGaInP115

lead frame181

GaAsP94

conductor114

InP20

concentration quenching201

GaP93

Concentration Quenching

phosphorescence; hp199

Effect200

Phonon105

Integrating-Sphere

thin lm ip chip219
Korean Industrial Standards,

Photometer254

KS76

uorescence198, 199
Phosphor Plate218

brilliant red light12

Phosphor Converted190

SMD183

fluorescence and phosphores-

point symmetry195

cence198
current harmonic135

THD- total harmonic distortion176

normalized251

Radiometry246

diffraction grating rotates

radiation heat transfer227

256

radiative recombination174

blue-chip190

Intensity152

sapphire14, 20, 120, 123

Radiance152

Flip-Chip187

output slit256

discrete device134

selective epitaxy; SAE26

Impurity106

germanium, Ge115

two-ow24

Candela152

two-flow

298

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organometallic vapor-phase epitaxy,
OMVPE17
Goniophotometer257
boundary conduction mode
139

dangling bond116
Vgs133

www.wunan.com.tw299
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 www.wunan.com.tw
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LED
. ., 2012.04

ISBN 978-957-11-6659-9 ()
1.2.3.
469.45

101007513

5DF2

LED
Fundamental and Applications of LED Engineers











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