Small Signal General Purpose Transistors (PNP) 2N4403

Small Signal General Purpose Transistors (PNP)

Features
PNP Silicon Epitaxial Transistor for Switching and Amplifier Applications RoHS Compliance

Mechanical Data
Case: Terminals: Weight: TO-92, Plastic Package Solderable per MIL-STD-202G, Method 208 0.18 gram

TO-92

Maximum Ratings (T Ambient=25C unless noted otherwise)

Symbol Description Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Power Dissipation at TA=25C 2N4403 40 40 5.0 600 625 5.0 1.5 12 200 83.3 -55 to +150 Unit V V V mA mW mW/ C W mW/ C C/W C/W C

VCEO VCBO VEBO IC PD

Derate above 25C Power Dissipation at TC=25C

PD
Derate above 25C

RJA RJC TJ ,TSTG

Thermal Resistance Junction to Ambient Air Thermal Resistance Junction to Case Operation and Storage Junction Temperature Range

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Small Signal General Purpose Transistors (PNP) 2N4403

Electrical Characteristics (T Ambient=25C unless noted otherwise)
Symbol Description Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Emitter Saturation Voltage 2N4403 Min. 40 40 5.0 Base Emitter Saturation Voltage Collector CutOff Current Base CutOff Current 0.75 30 60 Max. 0.40 0.75 0.95 1.30 100 100 300 15 8.0 8.5 30 500 100 15 20 225 30 S nS nS nS nS k x10
4

Unit V V V V

Conditions IC=100A, IE=0 IC=1mA, IB=0 IE=100A, IC=0 IC=150mA, IB=15mA IC=500mA, IB=50mA

V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) *

VBE(sat) * ICEV IBEV

V nA nA

IC=150mA, IB=15mA IC=500mA, IB=50mA VEB=0.4V, VCE=35V VEB=0.4V, VCE=35V VCE=1V, IC=0.1mA VCE=1V, IC=1mA VCE=1V, IC=10mA VCE=2V, IC=150mA VCE=2V, IC=500mA VCE=10V, IC=1mA f=1KHz, VCE=10V, IC=1mA f=1KHz, VCE=10V, IC=20mA, f=100MHz VCB=10V, IE=0 f=140KHz, VEB=0.5V, IC=0 f=140KHz, VCE=10V, IC=1mA f=1KHz, VCE=10V, IC=1mA f=1KHz, VCC=30V, VEB=2V IC=150mA, IB1=15mA VCC=30V, IC=150mA IB1=IB2=15mA

hFE*

D.C. Current Gain

100 100 20

hie hre fT CCBO CEBO hfe hoe td tr ts tf

*Pulse

Input Impedance Voltage Feedback Ratio Current Gain-Bandwidth Product Collector-Base Capacitance Emitter-Base Capacitance Small Signal Current Gain Output Admittance Delay Time Rise Time Storage Time Fall Time

1.5 0.1 200 60 1.0 -

MHz pF pF

Test: Pulse Width<300s, Duty Cycle<2%

Rev. A/AH 2008-07-11

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Small Signal General Purpose Transistors (PNP) 2N4403

Dimensions in mm
TO-92

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Small Signal General Purpose Transistors (PNP) 2N4403

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