Q Avalanche Rugged Technology

Q Rugged Gate Oxide Technology

Q Lower nput Capacitance
Q mproved Gate Charge
Q Extended Safe Operating Area
Q Lower Leakage Current : 10 A (Max.) @ V
DS
= 200V
Q Low R
DS(ON)
: 0.054 (Typ.)
Advanced Power MOSFET
ThermaI Resistance
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
R
JC
R
CS
R
JA
/W
Characteristic Max. Units SymboI Typ.
FEATURES
AbsoIute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25 )
Continuous Drain Current (T
C
=100 )
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy

Avalanche Current
Repetitive Avalanche Energy

Peak Diode Recovery dv/dt


Total Power Dissipation (T
C
=25)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8" from case for 5-seconds
Characteristic VaIue Units SymboI

DM
V
GS
E
AS

AR
E
AR
dv/dt

D
P
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W/
A
V
DSS
V

1.Gate 2. Drain 3. Source

3
2
1

BV
DSS
= 200 V
R
DS(on)
= 0.065

D
= 35 A
200
35
22.2
140

653
35
17.6
5.0
176
1.41
- 55 to +150
300
0.71
--
62.5
--
0.5
--

_
O
1
O
2
O
3
O
1
O
1
o
C
o
C
o
C
o
C
o
C
o
C
T

T

T
:
:
P
N-CHANNEL
POWER MOSFET
EIectricaI Characteristics (T
C
=25 unless otherwise specified)
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Characteristic SymboI Max. Units Typ. Min. Test Condition
Static Drain-Source
On-State Resistance
Forward Transconductance
nput Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain(" Miller ) Charge
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
BV
DSS

BV/T
J

V
GS(th)
R
DS(on)

GSS

DSS
V

V
nA
A

pF
ns
nC
--
--
--
--
--
--
--
--
--
--
--
--
--
V
GS
=0V ,
D
=250A

D
=250 A See Fig 7
V
DS
=5V,
D
=250A
V
GS
=30V
V
GS
=-30V
V
DS
=200V
V
DS
=160V,T
C
=125
V
GS
=10V,
D
=17.5A

V
DS
=40V,
D
=17.5A
V
DD
=100V,
D
=45A,
R
G
=5.3
See Fig 13
V
DS
=160V,V
GS
=10V,

D
=45A
See Fig 6 & Fig 12
Drain-to-Source Leakage Current
V
GS
=0V,V
DS
=25V,f =1MHz
See Fig 5
Source-Drain Diode Ratings and Characteristics
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge

SM
V
SD
t
rr
Q
rr
Characteristic SymboI Max. Units Typ. Min. Test Condition
--
--
--
--
--
A
V
ns
C
ntegral reverse pn-diode
in the MOSFET
T
J
=25,
S
=35A,V
GS
=0V
T
J
=25,
F
=45A
di
F
/dt=100A/s
o
C
' ' V/
o
C
P
P
P
P P
O
1
O
4
O
4
o
C
o
C
O
4
O
4
O
5
O
4
O
4
O
5
:
:
:
o
C
P

200
--
2.0
--
--
--
--
--
0.21
--
--
--
--
--
530
255
22
22
79
36
117
25
48.8
--
--
4.0
100
-100
10
100
0.065
--
3940
610
295
60
60
170
80
152
--
--
22.83
3030
--
--
--
210
1.67
35
140
1.5
--
--
Notes ;
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
L=0.8mH,
AS
=35A, V
DD
=50V, R
G
=27, Starting T
J
=25

SD
45A, di/dt370A/s, V
DD
BV
DSS
, Starting T
J
=25
Pulse Test : Pulse Width = 250s, Duty Cycle 2%
Essentially ndependent of Operating Temperature
<_ <_ <_
<_
:
o
C
o
C P
P
O
1
O
2
O
3
O
4
O
5
N-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics Fig 2. Transfer Characteristics
Fig 6. Gate Charge vs. Gate-Source VoItage Fig 5. Capacitance vs. Drain-Source VoItage
Fig 4. Source-Drain Diode Forward VoItage Fig 3. On-Resistance vs. Drain Current

10
-1
10
0
10
1
10
0
10
1
10
2
@ Notes :
1. 250 Ps Pulse Test
2. T
C
= 25
o
C
V
GS
Top : 15V
10 V
8.0 V
7.0 V
6.0 V
5.5V
5.0 V
Bottom: 4.5V
I

,

D
r
a
i
n

C
u
r
r
e
n
t


[
A
]
V

, Drain-Source Voltage [V]

2 4 6 8 10
10
0
10
1
10
2
25
o
C
150
o
C
- 55
o
C
@ Notes :
1. V
GS
= 0 V
2. V
DS
= 40 V
3. 250 Ps Pulse Test
I

,

D
r
a
i
n

C
u
r
r
e
n
t


[
A
]
V

, Gate-Source Voltage [V]

0 50 100 150 200
0.00
0.05
0.10
0.15
@ Note : T

= 25

C
V

= 20 V
V

= 10 V
R

,

[
:
]
D
r
a
i
n
-
S
o
u
r
c
e

O
n
-
R
e
s
i
s
t
a
n
c
e
I

, Drain Current [A]

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
10
0
10
1
10
2
150
o
C
25
o
C
@ Notes :
1. V
GS
= 0 V
2. 250 Ps Pulse Test
I

,

R
e
v
e
r
s
e

D
r
a
i
n

C
u
r
r
e
n
t


[
A
]
V

, Source-Drain Voltage [V]

10
0
10
1
0
1000
2000
3000
4000
5000
C
iss
= C
gs
+ C
gd
(

C
ds
= shorted

)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
@ Notes :
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
C
a
p
a
c
i
t
a
n
c
e


[
p
F
]
V

, Drain-Source Voltage [V]

0 20 40 60 80 100 120
0
5
10
V
DS
= 160 V
V
DS
= 100 V
V
DS
= 40 V
@ Notes : I
D
= 45.0 A
V

,

G
a
t
e
-
S
o
u
r
c
e

V
o
l
t
a
g
e


[
V
]
Q

, Total Gate Charge [nC]

N-CHANNEL
POWER MOSFET
Fig 7. Breakdown VoItage vs. Temperature Fig 8. On-Resistance vs. Temperature
Fig 11. ThermaI Response
Fig 10. Max. Drain Current vs. Case Temperature Fig 9. Max. Safe Operating Area

-75 -50 -25 0 25 50 75 100 125 150 175

0.8
0.9
1.0
1.1
1.2
@ Notes :
1. V
GS
= 0 V
2. I
D
= 250 PA
B
V

,

(
N
o
r
m
a
l
i
z
e
d
)
D
r
a
i
n
-
S
o
u
r
c
e

B
r
e
a
k
d
o
w
n

V
o
l
t
a
g
e
T

, Junction Temperature [

C]
-75 -50 -25 0 25 50 75 100 125 150 175
0.0
0.5
1.0
1.5
2.0
2.5
3.0
@ Notes :
1. V
GS
= 10 V
2. I
D
= 22.5 A
R

,

(
N
o
r
m
a
l
i
z
e
d
)
D
r
a
i
n
-
S
o
u
r
c
e

O
n
-
R
e
s
i
s
t
a
n
c
e
T

, Junction Temperature [

C]
10
0
10
1
10
2
10
-1
10
0
10
1
10
2
10
3
10 Ps
DC
100 Ps
1 ms
10 ms
@ Notes :
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
Operation in This Area
is Limited by R
DS(on)
I

,

D
r
a
i
n

C
u
r
r
e
n
t


[
A
]
V

, Drain-Source Voltage [V]

25 50 75 100 125 150
0
10
20
30
40
I

,

D
r
a
i
n

C
u
r
r
e
n
t


[
A
]
T

, Case Temperature [

C]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
single pulse
0.2
0.1
0.01
0.02
0.05
D=0.5
@ Notes :
1. Z
TJC
(t)=0.71
o
C/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
JM
-T
C
=P
DM
*Z
TJC
(t)
Z
T

(
t
)

,


T
h
e
r
m
a
l

R
e
s
p
o
n
s
e
t

, Square Wave Pulse Duration [sec]

N-CHANNEL
POWER MOSFET
Fig 12. Gate Charge Test Circuit & Waveform
Fig 13. Resistive Switching Test Circuit & Waveforms
Fig 14. UncIamped Inductive Switching Test Circuit & Waveforms
E
AS
L
L
I
AS
2
----
2
1
--------------------
BV
DSS
-- V
DD
BV
DSS
V
in
V
out
10
90
t
d(on)
t
r
t
on
t
oII
t
d(oII)
t
I
Charge
V
GS
10V
Q
g
Q
gs
Q
gd
Vary t

to obtain
required peak I

10V
V
DD
C
L
L
V
DS
I
D
R
G
t
p
DUT
BV
DSS
t
p
V
DD
I
AS
V
DS
(t)
I
D
(t)
Time
V
DD
( 0.5 rated V

)
10V
V
out
V
in
R
L
DUT
R
G
3mA
V
GS
Current SampIing (I

)
Resistor
Current SampIing (I

)
Resistor
DUT
V
DS
300nF
50K:
200nF 12V
Same Type
as DUT
' Current ReguIator
R
1
R
2

N-CHANNEL
POWER MOSFET
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
V

--
L

Driver
V

Same Type
as DUT
V

dv/dt controlled by 'R

controlled by Duty Factor 'D

V

10V
V

( Driver )
I

( DUT )
V

( DUT )
V

Body Diode
Forward Voltage Drop
V

, Body Diode Forward Current

Body Diode Reverse Current
I

Body Diode Recovery dv/dt

di/dt
D
Gate Pulse Width
Gate Pulse Period
--------------------------