Growth and characterization of ZnO nano structures and thin films for optoelectronic applications ZnO research group

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Introduction: ZnO is a II-VI group oxide semiconductor

Direct wide band gap : 3.37 eV High exciton binding energy : 60 meV High transparency in visible region > 95% Natural ZnO shows always n-type nature due to defects

Crystal structure: ZnO crystallizes in three different forms

Hexagonal wurtzite Zinc blende Rock salt Stable form : Hexagonal wurtzite Hexagonal wurtzite

Synthesis of ZnO nano crystals and thin films:

Pulsed laser deposition (PLD)

Nano particle assisted pulsed laser deposition (NAPLD)

Sputtering Chemical vapour deposition (CVD)

Optical property of ZnO nano structurers:

PL spectrum shows high intensity peak at 397 nm corresponding to near band edge emission which lies in UV region. The broad peak corresponds to defects (oxygen vacancies) related emission

Photoluminescence (PL) spectrum of ZnO nano wires

Electrical studies on ZnO thin films:

Resistivity of ZnO thin films

p-n hetero junction between p- type Li-Ni codoped ZnO and n-Si

Li-Ni codoped ZnO thin film shows low resistivity compared to mono doped ZnO and undoped ZnO Li-Ni: ZnO shows a rectifying behaviour conforming p-type nature in Li- Ni ZnO thin films

SEM images of ZnO nano structures :

ZnO nano rods grown on diamond substrate

Various planes in ZnO

ZnO nano-flowers grown using CVD method

ZnO nano-combs

TEM images of ZnO nano rod:

TEM images of a single nano rod selected area diffraction confirms wurtzite structure of nano rod The image shows that nano rod has a single crystalline nature