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10.1) Objectives
To determine operational range of BJT
10.3) Theory
Ib Ic
RC = 2.2k
RB = 270k
AC output signal
10µ Cce
AC input signal Bce Vce C2 = 10µ
C1 E
Vbe
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EEE3100 – Electrical and Electronics Technology Lab 10 – DC Analysis For Bipolar Junction Transistor
10.5) Results & Discussion:
IC IC
IB
IB
IE
IE
Transistor symbol
Transistor diagram
Experimental result:
i. IB = 44.0 µA
ii. IC = 5.0 mA
iii. VCE =
iv. VB = 0.7 V
v. VC =
vi. VBC = 0.55 V
Calculated values:
iii. VCE=VCC-ICRC
=12-4.185mA x 2200Ω
=2.793 V
2
EEE3100 – Electrical and Electronics Technology Lab 10 – DC Analysis For Bipolar Junction Transistor
iv. VB=VCC-IBRB
=12-41.85μA x 270000Ω
=0.7005 V
v. VC=VCC-ICRC
=12-4.185mA x 2200Ω
=2.793 V
vi. VBC=VCE-VBE
=2.793-0.7005
=2.0925 V
10.6) Conclusion
10.7) References
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EEE3100 – Electrical and Electronics Technology Lab 10 – DC Analysis For Bipolar Junction Transistor
[1] Edward Hughes Electrical and Electronic Technology Ninth Edition(Publisher
[2] J.J DeFrance Electrical Fundamental (PRENTICE HALL INC, Year 1996, Page465-
485)
[3] Giorgio Rizzoni Principles and Applications of Electrical Engineering, 2nd edition