Professional Documents
Culture Documents
2 3 4 5
Schematic
H3 H2 H1
1
C1 47nF C2 47nF
GND +48V +15V
R1
47K
-15V Q1 BC550C
C3 BC560C Q2 C4
R2 R3
C5
C6 100nF 10uF C7 100nF
GND 12K 12K
47uF 60V GND 47uF 60V 10uF C8 47uF 60V
C9
+15V a1
GND -15V a1
D1 D2
7
4
D3 D4 U1
1N4148 1N4148 5
1N4148 1N4148 REF
V-
V+
R4
8 1 H4
6.8K RG_1 1
R5
8 6
R6 RG_2 INA217 AIP V_OUT 2
P1
6.8K R7
1.6kA 3 H5
V_IN+ 1M 1
2
V_IN- P2 2
47kB
R8 R9
C10 C11 2.2K 2.2K
47uF 60V 47uF 60V C12 GND
100nF GND
GND GND
+15V a2
U2
OPA137
7
2
6
3
4
-15V a2 GND
12K 12K
C17 C18
C19 C20
47nF 47nF
GND
Polarized Capacitor (Radial) 47uF 60V B 7 C3, C4, C5, C10, C11, C17, C18 Capacitor, Electrolytic, Radial; Body 5 x 6.8 mm (Dia.xH typ); Pin Spacing 2 mm (typ)
Capacitor, Ceramic, Thru-Hole, Dipped Radial; Body 7.8 x 3.2 mm (WxT) Pin Spacing 5.08 mm
Capacitor 100nF VP45-3.2 5 C6, C8, C12, C13, C15 (typ)
Polarized Capacitor (Radial) 10uF A 4 C7, C9, C14, C16 Capacitor, Electrolytic, Radial; Body 4 x 5 mm (Dia.xH typ); Pin Spacing 1.5 mm (typ)
High Conductance Fast Diode 1N4148 DO-35 4 D1, D2, D3, D4 Diode, Axial; Body 3.8 x 1.9 mm (LxDia. max), Lead Dia. 0.53 mm (max)
Transistor NPN Silicon BC550C 29-04 2 Q1, Q4 TO, Flat Index; 3 In-Line, Axial Leads; Body Dia. 4.8mm; Leads 0.48 x 0.5 mm (max)
Transistor PNP Silicon BC560C 29-04 2 Q2, Q3 TO, Flat Index; 3 In-Line, Axial Leads; Body Dia. 4.8mm; Leads 0.48 x 0.5 mm (max)
Resistor
2 47K AXIAL-0.4
3 1 R1
4Resistor; 2 Leads 5
Resistor 12K AXIAL-0.4 4 R2, R3, R10, R11 Resistor; 2 Leads
Resistor 6.8K AXIAL-0.4 2 R4, R6 Resistor; 2 Leads
Resistor 8 AXIAL-0.4 1 R5 Resistor; 2 Leads
Resistor 1M AXIAL-0.4 1 R7 Resistor; 2 Leads
Resistor 2.2K AXIAL-0.4 2 R8, R9 Resistor; 2 Leads
Instrument Amp INA217 AIP DIP-8 1 U1 DIP, 8-Pin, Row Spacing 7.62 mm, Pitch 2.54 mm
FET-Input Operational Amplifiers OPA137 006E 1 U2 DIP; 8 Leads; Row Spacing 7.62 mm; Pitch 2.54 mm
Top layer
2
75x57mm3
Bottom layer
2 3
ENGINEER: TITLE:
PCB DESIGNER:
Top overlay
+ + +
H1 H3
+
+ + +
+ +
H5
+ +
H2
ENGINEER: TITLE:
U1 PCB DESIGNER:
H4
U2