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Abstract
Concerning the higher cost and complex process, etc. in the production of microfluidic chips, the ordinary slide, a kind of sodalime glass as substrate carrier and positive photoresist AZ 4620 as sacrificial layer, be the alternative, characterized by economic
effectiveness, simplicity and short manufacture cycle. In this paper, the following aspects have been systematically investigated in
details, including the pretreatment of glass slide, photoresist coating, various stages of baking parameters, exposure and developer
volume, etching environment and the glass buffered oxide etchs ratio, systematically, and then the solution to the adhesion
problem of the photoresist with the glass, photoresists tolerance time in buffered oxide etch. After the optimization,, the etching
depth can reach 80 m, the minimum feature size could be less than 50 m, the sidewall steepness is less than 100, the flatness
error is less than 1.5 m, and the production cycle takes just 4 h.
Keywords: Microfabrication Process; Microfluidic Chips; AZ 4620; UV Thick Photoresist Lithography; Wet Etching
261031
Pyrex 7740
[1-2]
[3]
[4] Pyrex 7740
[5]
[6]
AZ 4620
2.1
SiO2 HF [9]
(1)
SiF4 HF
(2)
(3)
1:
3:
2:
4:
1 H2SO4:H2O2=3:1
15 min 120 10 min
5 min 150 AZ 4620
2
80 m
20 m
3
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HF SiO2 HF SiO2
(Buffered Oxide Etch, BOE)
2.2
H2SO4H2O2=31 15min 120
10min 5min
150 3
V
V
W
V
V
60s 1000~5000rad/min
34
13.5
2.0
/h
/m
18
4.5
1
3
4
/10r/min
1.5
1.0
0.5
1
3
4
/10r/min
3000rad/min
2000rad/min
2000rad/min
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80
60
40
20
0
-20
-40
-60
-80
25
50
175
200 225
5 2000 rad/min
40
5 m[12] 80
40~60min
2.3
80m
20m
15.7mW/cm2 URE-2000B
Height /m
Height /m
(a)
(b)
12
10
-1
8
6
4
-2
2
0
-3
-2
-4
-4
0
200
400
600
Scan Length /m
800
200
400
1200
Height /m
(d)
(c)
4
2
0
-2
-4
-6
-8
-10
-12
0
100m
200
400
6 (a)(b)(c)(d)
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30s
70~80 9~10m AZ P4620
PAC [10] 9 ~ 10 m
AZ 4620 15.7 mW/cm2 URE-2000B
6
AZ400K1:3 1
225~250s 2~2.5min
1
/s
100
150
200
225
250
275
300
/s
600
480
300
180
150
120
120
/min
85
85
90
95
95
90
85
2.4
2.4.1
[11-14]
7
9 ~ 10 m 70
min 90 min
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2.4.2
BOE
(1) BOE
BOE (H)(F-)
BOE
2000 rad/min 9 ~ 10 m 80 40 min 90 60 min
BOE 3-16 BOE
8
1:10 ~ 1:15 BOE
/min
/m/min
BOE
8 BOE
(2) HCl
BOE
/m
/m/min
HCl/%
9 HCl
2.4.3
(1)
10
/min
/m
10
20 ~ 30
(2)
[15]
DF-101S
30 11
BOE
11
800 rad/min
2
2
150 5 min
AZ 46202000 rad/min1 min
80 40 ~ 60 min
15.7 mW/cm2225 ~ 250 s
80 30 s
AZ 400K1:32.5 ~ 3 min
80 ~ 90 70 ~ 90 min
BOE1:10 1:1520 ~ 30 800 rad/min90 min
BOE1:15 90~
110min 75~80m 1001.5 m 4 h
80m 50m
1001.5m 4h
BOE
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2010 2012 Email:
liqichang100@qq.com.
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