GF4425

P-Channel Enhancement-Mode MOSFET

H C N t c E ET u R T ENF rod P G SO-8 New

0.197 (5.00) 0.189 (4.80) 8 5 0.157 (3.99) 0.150 (3.81) 0.244 (6.20) 0.228 (5.79) 1 4

VDS 30V RDS(ON) 14m ID -11A

0.05 (1.27) 0.04 (1.02)

Dimensions in inches and (millimeters)
0.019 (0.48) x 45 0.010 (0.25)

0.245 (6.22) Min.

0.165 (4.19) 0.155 (3.94)

0.050 (1.27)

0.020 (0.51) 0.013 (0.33) 0.069 (1.75) 0.053 (1.35) 0.009 (0.23) 0.004 (0.10)

0.009 (0.23) 0.007 (0.18)

0.035 (0.889) 0.025 (0.635)

0.050 typ. (1.27)

Mounting Pad Layout

0 8 0.050(1.27) 0.016 (0.41)

Mechanical Data
Case: SO-8 molded plastic body Terminals: Leads solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250C/10 seconds at terminals Mounting Position: Any Weight: 0.5g

Features
Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Specially Designed for Low Voltage DC/DC Converters Fast Switching for High Efficiency

Maximum Ratings and Thermal Characteristics (T

Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150C)(1) Pulsed Drain Current Maximum Power Dissipation TA = 25C TA = 70C
(1)

= 25C unless otherwise noted)

Symbol VDS VGS TA = 25C TA = 70C ID IDM PD TJ, Tstg RJA

Limit 30 20 11 8.7 50 2.5 1.6 55 to 150 50

Unit V

W C C/W 6/15/01

Operating Junction and Storage Temperature Range Maximum Junction-to-Ambient

Notes: (1) Surface Mounted on FR4 Board, t 10 sec.

GF4425
P-Channel Enhancement-Mode MOSFET
Electrical Characteristics (T
Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Drain-Source On-State Resistance(1) Forward Transconductance(1) Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Ouput Capacitance Reverse Transfer Capacitance Source-Drain Diode Maximum Diode Forward Current Diode Forward Voltage Source-Drain Reverse Recovery Time
Note: (1) Pulse test; pulse width 300 s, duty cycle 2%
J

= 25C unless otherwise noted)

Symbol

Test Condition VDS = VGS, ID = 250A VDS = 0V, VGS = 20V VDS = 30V, VGS = 0V VDS=15V, VGS=0, TJ=70C VDS 5V, VGS = 10V VGS = 10V, ID = 11A VGS = 4.5V, ID = 8.5A VDS = 15V, ID = 11A

Min

Typ

Max

Unit

VGS(th) IGSS IDSS ID(on) RDS(on) gfs

1.0 30

11.5 15.5 37

V nA A A m S

100
1.0 5.0 14 23

Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss

VDS = 15V, VGS = 10V ID = 11A VDD = 15V, RL = 15 ID 1A, VGEN = 10V RG = 6

73 12 11 7 11 210 76 3500 700 370

120 25 25 250 100 pF ns nC

VDS = 15V, VGS = 0V f = 1.0 MHZ

IS VSD trr IS = 2.1A, VGS = 0V IF = -2.1A, di/dt = 100A/s

49

2.1 1.2 90

A V ns

VDD td(on) VOUT Output, VOUT VGEN RG

G
DUT

ton tr
90%

toff td(off) tf 90 %
10%

VIN
D

RD

10%

90% 50% 50%

Input, VIN
S

10% INVERTED PULSE WIDTH

Switching Test Circuit

Switching Waveforms

GF4425
P-Channel Enhancement-Mode MOSFET
Ratings and Characteristic Curves (T
50 VGS = -- 4.5V, -5.0V, -6.0V, -7.0V, -8.0V, -10.0V
A

= 25C unless otherwise noted)

Fig. 1 Output Characteristics

50

Fig. 2 Transfer Characteristics

VDS = --10V 40 --55C TJ = 125C

--ID -- Drain-to-Source Current (A)

40

--4.0V -- ID -- Drain Current (A) --3.5V

30

30

20

20

--3.0V
10

10

25C

0 0 1 2 3

--2.5V
4 5

0 1 2 3 4 5

--VDS -- Drain-to-Source Voltage (V)

-- VGS -- Gate-to-Source Voltage (V)

Fig. 3 Threshold Voltage vs. Temperature

--V(th) -- Gate-to-Source Threshold Voltage (V) (Normalized)
1.4 ID = --250A 1.2 0.03

Fig. 4 On-Resistance vs. Drain Current

RDS(ON) -- On-Resistance ()

0.02 VGS = - 4.5V

0.8

0.01

-10V

0.6

0.4

--50

--25

25

50

75

100

125

150

10

20

30

40

50

TJ -- Junction Temperature (C)

-- ID -- Drain Current (A)

Fig. 5 On-Resistance vs. Junction Temperature

1.6 VGS = --10V ID = --11A 0.1

Fig. 6 On-Resistance vs. Gate-to-Source Voltage

ID = --11A

RDS(ON) -- On-Resistance ()

RDS(ON) -- On-Resistance (Normalized)

1.4

0.08

1.2

0.06

0.04 125C 0.02 TJ = 25C

0.8

0.6

--50

--25

25

50

75

100

125

150

10

TJ -- Junction Temperature (C)

-- VGS -- Gate-to-Source Voltage (V)

GF4425
P-Channel Enhancement-Mode MOSFET
Ratings and Characteristic Curves (T
10 VDS = --15V ID = --11A 8 Ciss
A

= 25C unless otherwise noted)

Fig. 7 Gate Charge

4800

Fig. 8 Capacitance
f = 1MHz VGS = 0V

-- VGS -- Gate-to-Source Voltage (V)

C -- Capacitance (pF)

3600

2400

1200 Crss

Coss

0 0 10 20 30 40 50 60 70 80

0 0 5 10 15 20 25 30

Qg -- Gate Charge (nC)

--VDS -- Drain-to-Source Voltage (V)

Fig. 9 Source-Drain Diode Forward Voltage

100 VGS = 0V

Fig. 10 Transient Thermal Impedance

D= 0.5 0.2 0.1

--IS -- Source Current (A)

10 TJ = 125C 1

0.05 0.02

25C 0.1

Single Pulse

--55C
0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

60

--VSD -- Source-to-Drain Voltage (V)

Fig. 11 Power vs. Pulse Duration

70 60 50 40 30 20 10 0 0.01 0.1 1 10 100 0.01 Single Pulse RJA = 60C/W TA = 25C 100

Fig. 12 Maximum Safe Operating Area

10 0

1m

--ID -- Drain Current (A)

10
10

10
0m

ms

RDS(ON) Limit
1

1s

10s 0.1 VGS = -10V Single Pulse on 1-in2 2oz Cu. TA = 25C 0.1 1 DC

10

100

--VDS -- Drain-Source Voltage (V)