Si4559EY

Vishay Siliconix

N-Channel 60-V (D-S), 175C MOSFET

PRODUCT SUMMARY
VDS (V)
N-Channel 60

rDS(on) (W)
0.055 @ VGS = 10 V 0.075 @ VGS = 4.5 V

ID (A)
"4.5 "3.9 "3.1 "2.8

P-Channel

60

0.120 @ VGS = 10 V 0.150 @ VGS = 4.5 V

D1

D1

S2

SO-8
S1 G1 S2 G2 1 2 3 4 Top View 8 7 6 5 D1 D1 D2 D2 S1 N-Channel MOSFET D2 D2 G2 G1

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C

Symbol
VDS VGS ID IDM IS PD TJ, Tstg

N-Channel
60 "20 "4.5 "3.8 "30 2.0 2.4

P-Channel
60

Unit
V

"20 "3.1 "2.6 "30 2.0 W 1.7 55 to 175 _C A

THERMAL RESISTANCE RATINGS

Parameter
Maximum Junction-to-Ambienta

Symbol
RthJA

N- or P- Channel
62.5

Unit
_C/W

Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 70167 S-57253Rev. D, 24-Feb-98 www.vishay.com S FaxBack 408-970-5600

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Si4559EY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V Z G V l D i Current C Zero Gate Voltage Drain IDSS VDS = 60 V, VGS = 0 V VDS = 60 V, VGS = 0 V, TJ = 55_C VDS = 60 V, VGS = 0 V, TJ = 55_C On-State Drain Currentb ID(on) VDS w 5 V, VGS = 10 V VDS v 5 V, VGS = 10 V VGS = 10 V, ID = 4.5 A
b D i S Drain-Source On-State O S Resistance R i

Symbol

Test Condition

Min

Typa

Max

Unit

N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch

1 1 "100 "100 2 2 25 25 20 20 0.045 0.100 0.055 0.125 13 7.5 0.9 0.8 1.2 1.2 0.055 0.120 0.075 0.150

Gate-Body Leakage

IGSS

nA

mA

rDS(on)

VGS = 10 V, ID = 3.1 A VGS = 4.5 V, ID = 3.9 A VGS = 4.5 V, ID = 2.8 A

Forward Transconductanceb

gfs

VDS = 15 V, ID = 4.5 A VDS = 15 V, ID = 3.1 A IS = 2.0 A, VGS = 0 V IS = 2.0 A, VGS = 0 V

Diode Forward Voltageb

VSD

Dynamica
Total Gate Charge Qg N-Ch N-Channel N Ch l VDS = 30 V, V VGS = 10 V V, ID = 4.5 45A P-Channel VDS = 30 V, VGS = 10 V ID = 3.1A P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Channel N Ch l VDD = 30 V, RL = 30 W ID ^ 1 A, VGEN = 10 V, RG = 6 W P-Channel 30 V, V RL = 30 W VDD = 30 ID ^ 1 1 A, VGEN = 10 10 V, RG = 6 W N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch IF = 2 A, di/dt = 100 A/ms IF = 2 A, di/dt = 100 A/ms N-Ch P-Ch 19 16 4 4 3 1.6 13 8 11 10 36 12 11 35 35 60 20 15 20 20 60 25 20 50 60 90 ns 30 25 nC C

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Turn-On Delay Time

td(on)

Rise Time

tr

Turn-Off Delay Time

td(off)

Fall Time

tf

Source-Drain Reverse Recovery Time

trr

Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%.

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Document Number: 70167 S-57253Rev. D, 24-Feb-98

Si4559EY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30 VGS = 10 thru 5 V 24 I D Drain Current (A) I D Drain Current (A) 4V 18 24 25_C 18 150_C 30 TC = 55_C

NCHANNEL
Transfer Characteristics

12

12

2, 1 V 3V

0 0 1 2 3 4 5

0 0 1 2 3 4 5 6

VDS Drain-to-Source Voltage (V)

VGS Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current

0.150 1400 1200 C Capacitance (pF) 1000 800 600 400 200 Crss 0 0 6 12 18 24 30 0 0 12

Capacitance

0.125 r DS(on) On-Resistance ( )

0.100

Ciss

0.075

VGS = 4.5 V

0.050

VGS = 10 V

0.025

Coss

24

36

48

60

ID Drain Current (A)

VDS Drain-to-Source Voltage (V)

10 VDS = 30 V ID = 4.5 A V GS Gate-to-Source Voltage (V)

Gate Charge

2.2

On-Resistance vs. Junction Temperature

VGS = 10 V ID = 4.5 A

r DS(on) On-Resistance ( ) (Normalized) 0 4 8 12 16 20

1.9

1.6

1.3

1.0

0.7

0.4 50

25

25

50

75

100

125

150

175

Qg Total Gate Charge (nC)

TJ Junction Temperature (_C)

Document Number: 70167 S-57253Rev. D, 24-Feb-98

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Si4559EY
Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Source-Drain Diode Forward Voltage
20 0.10

NCHANNEL
On-Resistance vs. Gate-to-Source Voltage

) r DS(on) On-Resistance (

0.08

I S Source Current (A)

10

0.06

ID = 4.5 A

0.04

TJ = 175_C

TJ = 25_C

0.02

1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD Source-to-Drain Voltage (V)

0 0 2 4 6 8 10 VGS Gate-to-Source Voltage (V)

0.4 0.2 0.0 V GS(th) Variance (V)

Threshold Voltage
50

Single Pulse Power

40 ID = 250 A

0.2 0.4 0.6

Power (W)

30

20

10 0.8 1.0 50 0 25 0 25 50 75 100 125 150 175 0.01 0.1 1 Time (sec) 10 30

TJ Temperature (_C)

Normalized Thermal Transient Impedance, Junction-to-Ambient

2 1 Normalized Effective Transient Thermal Impedance

Duty Cycle = 0.5

0.2
Notes:

0.1 0.1 0.05

PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 62.5_C/W 3. TJM TA = PDMZthJA(t)

0.02 Single Pulse 0.01 104 103 102 101

4. Surface Mounted

10

30

Square Wave Pulse Duration (sec)

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Document Number: 70167 S-57253Rev. D, 24-Feb-98

Si4559EY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30 VGS = 10, 9, 8, 7, 6 V 24 I D Drain Current (A) I D Drain Current (A) 5V 18 16 20 TC = 55_C 150_C 25_C

PCHANNEL
Transfer Characteristics

12

12

4V

6 3V 0 0 1 2 3 4 5 6

0 0 2 4 6 8

VDS Drain-to-Source Voltage (V)

VGS Gate-to-Source Voltage (V)

On-Resistance vs. Drain Current

1.0 1400 1200 r DS(on) On-Resistance ( ) 0.8 C Capacitance (pF) 1000 800 600 400 Coss 200 0 0 4 8 12 16 20 ID Drain Current (A) 0 0 10 Crss

Capacitance

Ciss

0.6

0.4 VGS = 4.5 V VGS = 10 V

0.2

20

30

40

50

60

VDS Drain-to-Source Voltage (V)

10 VDS = 30 V ID = 3.1 A V GS Gate-to-Source Voltage (V)

Gate Charge

2.0

On-Resistance vs. Junction Temperature

VGS = 10 V ID = 3.1 A

r DS(on) On-Resistance ( ) (Normalized) 0 4 8 12 16 20

1.6

1.2

0.8

0.4

0 Qg Total Gate Charge (nC)

0 50

25

25

50

75

100

125

150

175

TJ Junction Temperature (_C)

Document Number: 70167 S-57253Rev. D, 24-Feb-98

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Si4559EY
Vishay Siliconix

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Source-Drain Diode Forward Voltage
20 0.5

PCHANNEL
On-Resistance vs. Gate-to-Source Voltage

10 I S Source Current (A) TJ = 175_C

r DS(on) On-Resistance ( )

0.4

0.3

TJ = 25_C

0.2

ID = 3.1 A

0.1

1 0.00 0.25 0.50 0.75 1.00 1.25 1.50

0 2 4 6 8 10

VSD Source-to-Drain Voltage (V)

VGS Gate-to-Source Voltage (V)

0.75

Threshold Voltage

Single Pulse Power

50 TC = 25_C Single Pulse 40

0.50 V GS(th) Variance (V) 30

0.25

ID = 250 A

Power (W)

20

0.00 10

0.25 50

0 25 0 25 50 75 100 125 150 175 0.01 0.1 1 Time (sec) 10 30 TJ Temperature (_C)

Normalized Thermal Transient Impedance, Junction-to-Ambient

2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5

0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 104 103 102 101 1

Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 62.5_C/W 3. TJM TA = PDMZthJA(t) 4. Surface Mounted

10

30

Square Wave Pulse Duration (sec)

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Document Number: 70167 S-57253Rev. D, 24-Feb-98

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