blE

H4tb25

GD130G

217

IHITM

SILICON N-CHANNEL MOS FET

LOW FREQUENCY POWER AMPLIFIER

HITACHI/COPTOELECTRONICS)

1) 'ld

Complementar/ pair with 2SJ48, 2SJ49,

2SJ50
FEATURES
. .

.
.

High Power Gain. Excellent Frequency Responso. High Speed Switching.

Wide Area of Safe Operation.
l GW
.

. Enhancement-Mode.
.

Good Complementary Characteristics. Equipped with Qate Protection Diodes.

2 Dnin
,

3 Source
.

(JEDECTO-3)
POWER VS. TEMPERATURE DERATING

iDimtnftions m

ABSOLUTE MAXIMUM RATINGS {T,=25C)

Item

Rating
bymbol
2SK133 2SK134 2SK13&

Unit
160

150

Drain-Sourcc Voltage
Gate-Source Voltag*
Drain Current

Vosx v0JJ
lo 0.
P.S

120

140
14
7

V V A
A
"

Body-Drain Diode
Reverse Drain Current

7 100 150
-

i S

Channel Dlssipation

Channel Temperature Storage Temperature

.

T,k
T
...

55-+150

Valu t7V=250C
SU l'V 150

Ci Tenipemure Te (ti

ELECTRICAL CHARACTERISTICS (r.=25 0C)

Item 2SK133 Drain-Source Breakdown

Symbol

Test Condition

min.

typ.
-

max.
-

Unit
V
V
V

120

2SK134 2SK135

/o=10mA, VCJ=-10V

140

Voltage

160

Gate-Source Breakdown Voltage

/C=100 A. V

14 0 15
. -

V V
V

Gate-Source Cutoff Voltage

Drain-Source Saturation Voltage
Forward Transfer Admittance

/o=100mA, Ko =10V 0=7A. Vco=0'

1 45
.

12

M
c. c
,

SA. Vo

lOV

07
. -

10
.

14
.
-

Input Capacltance

600

pF

Output Capacltance
Reverse Transfer Capacltance
Turn-on Time Turn-off Time
.

Vas=-5V.Vos=10V./=lMHz

350
10

pF
pF
ns ns

c,

180 60

V1,>=20V. /D=4A
-

Pulse Test

230
This Material Copyrighted By Its Respective Manufacturer

biE

t b20S qqibggt isb hitm

2SK133,2SK134,2SK135

HITACHI/(OPTOELECTRONICS)
MAXIMUM SAFE OPERATION AREA

TYPICAL OUTPUT CHARACTERISTICS

[omk\ (Conlinuom
-

\ i
\

r.x

(14.3V. 7A>

KOV.O 71A 160V. 0 63*

r
rt

fr
-

N
'

SK133

SK134

l
IU1

l
lo 2i> 30 40

Jl

200

Dram to Sourcf Voliage Vos (V)

Drain to Source Voltaje Vos (V)

TYPICAL TRANSFER CHARACTERISTICS

ld
.

DRAIN - SOURCE SATURATION

VOLTAGE VS. DRAIN CURRENT

= KlV
(18

J
f
J

vCI,=o

06

1
(14

//
/

//
5

11.2

il

U4

08

12

16

20

05

10

Cttc to Soorce Volt Ves IVI

Drin Current o (Al

DRAIN
GATE

SOURCE VOLTAGE VS.

SOURCE VOLTAGE

INPUT CAPACITANCE VS. GATE SOURCE VOLTAGE

1 000
,

\
v

\
5

500

S
f

I
I
(3

4
2

200
= 10V MHi

100

10

-4

-6

10

Ct. to Sourct Voltig Ves (V)

Cale to Source Voltagt Ves (V)

231
This Material Copyrighted By Its Respective Manufacturer

2SK133,2SK134,2SK135
FORWARD TRANSFER ADMITTANCE
VS. FREQUENCY
3X1

SWITCHING TIME
VS. DRAIN CURRENT

iu
.

ME
HUI
100
ti

03
.

01
.

l.ll

U 03
.

TC-2K
l .s-IOV
'

U 01
.

IIJ

U 0U3
.

lok

3k

lo*

3uk

1M

3M

tOM

III

0.2

11.5

l.ll

10

Frequency / (Hl

Drun Curreni le (A)

SWITCHING TIME TEST CIRCUIT

Outpul

WAVEFORMS

lliput

2(1 V

Omput

HITACHI/COPTOELECTRONICS)

blE D

232
This Material Copyrighted By Its Respective Manufacturer