LABORATORIO N1: CIRCUITO INVERSOR

Laboratorio de Microelectrnica

Pgina 1

LABORATORIO N1: CIRCUITO INVERSOR

CIRCUITO INVERSOR

Laboratorio de Microelectrnica

Pgina 2

LABORATORIO N1: CIRCUITO INVERSOR

FIGURA 1

ARCHIVO .CIR
CIRCUIT C:\Users\Diego\Documents\Microwind\fig1.MSK
*
* IC Technology: ST 0.25m - 6 Metal
*
VDD 1 0 DC 2.50
VIn2 5 0 PULSE(0.00 2.50 3.15N 0.05N 0.05N 3.15N 6.40N)
VIn1 7 0 PULSE(0.00 2.50 2.15N 0.05N 0.05N 2.15N 4.40N)
V/S 10 0 PULSE(2.50 0.00 1.15N 0.05N 0.05N 1.15N 2.40N)
Laboratorio de Microelectrnica

Pgina 3

LABORATORIO N1: CIRCUITO INVERSOR

V/S 11 0 PULSE(2.50 0.00 1.15N 0.05N 0.05N 1.15N 2.40N)
VS 12 0 PULSE(0.00 2.50 1.15N 0.05N 0.05N 1.15N 2.40N)
VS 13 0 PULSE(0.00 2.50 1.15N 0.05N 0.05N 1.15N 2.40N)
*
* List of nodes
* "N2" corresponds to n2
* "F" corresponds to n3
* "In2" corresponds to n5
* "N6" corresponds to n6
* "In1" corresponds to n7
* "/S" corresponds to n10, WARNING: appears 2 times in the layout
* "/S" corresponds to n11, WARNING: appears 2 times in the layout
* "S" corresponds to n12, WARNING: appears 2 times in the layout
* "S" corresponds to n13, WARNING: appears 2 times in the layout
*
* MOS devices
MN1 0 6 3 0 TN W= 0.75U L= 0.25U
MN2 6 10 5 0 TN W= 0.75U L= 0.25U
MN3 7 13 6 0 TN W= 0.75U L= 0.25U
MP1 1 6 3 2 TP W= 0.75U L= 0.25U
MP2 6 11 5 2 TP W= 0.75U L= 0.25U
MP3 7 12 6 2 TP W= 0.75U L= 0.25U
*
C2 2 0 4.122fF
C3 3 0 1.497fF
C4 1 0 1.272fF
C5 5 0 1.358fF
C6 6 0 1.898fF
C7 7 0 1.426fF
C8 1 0 0.403fF
C10 10 0 0.073fF
C11 11 0 0.075fF
C12 12 0 0.075fF
C13 13 0 0.035fF
*
* n-MOS Model 3 :
*
.MODEL TN NMOS LEVEL=3 VTO=0.45 KP=300.000E-6
+LD =0.020U THETA=0.300 GAMMA=0.400
+PHI=0.200 KAPPA=0.010 VMAX=130.00K
+CGSO= 0.0p CGDO= 0.0p
*
* p-MOS Model 3:
*
.MODEL TP PMOS LEVEL=3 VTO=-0.45 KP=120.000E-6
+LD =0.020U THETA=0.300 GAMMA=0.400
+PHI=0.200 KAPPA=0.010 VMAX=100.00K
Laboratorio de Microelectrnica

Pgina 4

LABORATORIO N1: CIRCUITO INVERSOR

+CGSO= 0.0p CGDO= 0.0p
*
* Transient analysis
*
.TEMP 27.0
.TRAN 0.80PS 20.00N
.PROBE
.END

Laboratorio de Microelectrnica

Pgina 5

LABORATORIO N1: CIRCUITO INVERSOR

FIGURA 2

Laboratorio de Microelectrnica

Pgina 6

LABORATORIO N1: CIRCUITO INVERSOR

ARCHIVO .CIR
CIRCUIT C:\Users\Diego\Documents\Microwind\figura2.MSK
*
* IC Technology: ST 0.25m - 6 Metal
*
VDD 1 0 DC 2.50
VB 16 0 PULSE(0.00 2.50 2.05N 0.05N 0.05N 2.05N 4.20N)
VA 17 0 PULSE(0.00 2.50 1.00N 0.05N 0.05N 1.00N 2.10N)
*
* List of nodes
* "N4" corresponds to n4
* "N5" corresponds to n5
* "N6" corresponds to n6
* "C" corresponds to n9
* "B" corresponds to n16
* "A" corresponds to n17
*
* MOS devices
MN1 11 17 0 0 TN W= 0.50U L= 0.25U
MN2 5 16 11 0 TN W= 0.50U L= 0.25U
MN3 12 17 5 0 TN W= 0.50U L= 0.25U
MN4 0 16 12 0 TN W= 0.50U L= 0.25U
MN5 0 5 9 0 TN W= 0.75U L= 0.25U
MN6 12 9 14 0 TN W= 0.63U L= 0.25U
MP1 4 17 1 1 TP W= 0.50U L= 0.25U
MP2 5 16 4 1 TP W= 0.50U L= 0.25U
MP3 6 17 5 1 TP W= 0.50U L= 0.25U
MP4 1 16 6 1 TP W= 0.50U L= 0.25U
MP5 9 5 1 1 TP W= 0.75U L= 0.25U
MP6 4 9 6 1 TP W= 0.63U L= 0.25U
*
C2 1 0 24.011fF
C3 1 0 0.716fF
C4 4 0 2.869fF
C5 5 0 3.633fF
C6 6 0 2.013fF
C7 1 0 0.717fF
C8 1 0 0.547fF
C9 9 0 2.313fF
C11 11 0 0.791fF
C12 12 0 4.278fF
C14 14 0 0.587fF
C16 16 0 2.247fF
C17 17 0 1.827fF
C18 18 0 2.862fF
*

Laboratorio de Microelectrnica

Pgina 7

LABORATORIO N1: CIRCUITO INVERSOR

* n-MOS Model 3 :
*
.MODEL TN NMOS LEVEL=3 VTO=0.45 KP=300.000E-6
+LD =0.020U THETA=0.300 GAMMA=0.400
+PHI=0.200 KAPPA=0.010 VMAX=130.00K
+CGSO= 0.0p CGDO= 0.0p
*
* p-MOS Model 3:
*
.MODEL TP PMOS LEVEL=3 VTO=-0.45 KP=120.000E-6
+LD =0.020U THETA=0.300 GAMMA=0.400
+PHI=0.200 KAPPA=0.010 VMAX=100.00K
+CGSO= 0.0p CGDO= 0.0p
*
* Transient analysis
*
.TEMP 27.0
.TRAN 0.80PS 20.00N
.PROBE
.END

Laboratorio de Microelectrnica

Pgina 8

LABORATORIO N1: CIRCUITO INVERSOR

FIGURA 3

Laboratorio de Microelectrnica

Pgina 9

LABORATORIO N1: CIRCUITO INVERSOR

ARCHIVO .CIR
CIRCUIT C:\Users\Diego\Documents\Microwind\fig3.MSK
*
* IC Technology: ST 0.25m - 6 Metal
*
VDD 1 0 DC 2.50
VA1 13 0 PULSE(0.00 2.50 1.05N 0.05N 0.05N 1.05N 2.20N)
VA2 14 0 PULSE(0.00 2.50 2.15N 0.05N 0.05N 2.15N 4.40N)
VA0 15 0 PULSE(0.00 2.50 0.50N 0.05N 0.05N 0.50N 1.10N)
VA3 16 0 PULSE(0.00 2.50 4.35N 0.05N 0.05N 4.35N 8.80N)
*
* List of nodes
* "N4" corresponds to n4
* "N5" corresponds to n5
* "Salida 2" corresponds to n6
* "Salida 1" corresponds to n7
* "N8" corresponds to n8
* "N9" corresponds to n9
* "A1" corresponds to n13
* "A2" corresponds to n14
* "A0" corresponds to n15
* "A3" corresponds to n16
*
* MOS devices
MN1 9 14 6 0 TN W= 0.50U L= 0.25U
MN2 10 15 7 0 TN W= 0.50U L= 0.25U
MN3 0 16 9 0 TN W= 0.50U L= 0.25U
MN4 0 14 10 0 TN W= 0.50U L= 0.25U
MN5 10 16 0 0 TN W= 0.50U L= 0.25U
MN6 12 16 0 0 TN W= 0.50U L= 0.25U
MN7 6 13 10 0 TN W= 0.50U L= 0.25U
MN8 7 14 12 0 TN W= 0.50U L= 0.25U
MP1 5 16 1 1 TP W= 0.50U L= 0.25U
MP2 4 14 1 1 TP W= 0.50U L= 0.25U
MP3 6 16 4 1 TP W= 0.50U L= 0.25U
MP4 7 15 5 1 TP W= 0.50U L= 0.25U
MP5 5 13 6 1 TP W= 0.50U L= 0.25U
MP6 8 16 7 1 TP W= 0.50U L= 0.25U
MP7 1 14 8 1 TP W= 0.50U L= 0.25U
MP8 1 14 5 1 TP W= 0.50U L= 0.25U
*
C2 1 0 12.131fF
C3 1 0 5.189fF
C4 4 0 0.121fF
C5 5 0 2.022fF
C6 6 0 4.109fF

Laboratorio de Microelectrnica

Pgina 10

LABORATORIO N1: CIRCUITO INVERSOR

C7 7 0 5.021fF
C8 8 0 0.121fF
C9 9 0 0.183fF
C10 10 0 2.414fF
C12 12 0 0.239fF
C13 13 0 1.375fF
C14 14 0 4.297fF
C15 15 0 2.186fF
C16 16 0 1.646fF
*
* n-MOS Model 3 :
*
.MODEL TN NMOS LEVEL=3 VTO=0.45 KP=300.000E-6
+LD =0.020U THETA=0.300 GAMMA=0.400
+PHI=0.200 KAPPA=0.010 VMAX=130.00K
+CGSO= 0.0p CGDO= 0.0p
*
* p-MOS Model 3:
*
.MODEL TP PMOS LEVEL=3 VTO=-0.45 KP=120.000E-6
+LD =0.020U THETA=0.300 GAMMA=0.400
+PHI=0.200 KAPPA=0.010 VMAX=100.00K
+CGSO= 0.0p CGDO= 0.0p
*
* Transient analysis
*
.TEMP 27.0
.TRAN 0.80PS 10.00N
.PROBE
.END

Laboratorio de Microelectrnica

Pgina 11