A 1.

8 Volt Supply, 5mW Power Consumption

and Double Balanced Gilbert Cell Mixer
for UHF Transceiver
Nguyn Hong c
(1)
, H Quang Ty
(1)
& PGS. Gio s Tin s Trn Thu H
(2)

(1): Phng thit k vi mch tng t, Trung Tm Nghin Cu v o To Thit K Vi Mch.
email: duc.nguyenhoang@icdrec.edu.vn
(2): i Hc Bch Khoa, tp H Ch Minh

Tm tt Vic chuyn i tn s trong mt h thng
truyn nhn cao tn c thc hin bi mt linh kin phi
tuyn, c gi tn l b trn tn. C rt nhiu m hnh
ca b trn tn nh: mt ng ra n, cn bng n hoc
nhng kin trc phc tp hn nh b trn cn bng i
hoc cn bng ba, lm tng kh nng cch ly vi nhng
tn s giao ng ni v tn s l. B trn c kin trc cn
bng i c s dng ph bin nht trong thit k vi
mch cao tn l b trn Gilbert Cell.
Trong bi bo ny s trnh by thit k v ti u ha v
mt cng sut, din tch cng nh cc thng s c tnh
ca b trn dng Gilbert Cell c s dng trong b thu
pht ti tn s 433 MHz.
Kt qu t c ca thit k: cng sut tiu th 5.18
mW hoc 5.32 mW, im nn bc 3 t c ti -4.5 dBm
hoc 3.15 dBm v h s nhiu t c l 7 dBm hoc 10
dBm, tng ng vi dng hoc khng dng cun cm.
cch ly vi tn s giao ng ni v tn s u vo ln lt
l 175 dB v 125 dB.

T kha B trn, li chuyn i, h s tp m, tuyn
tnh, cch ly.
I. GII THIU
B trn l mt thnh phn quan trng trong h thng truyn
nhn, c s dng chuyn i tn ln cao b truyn
hoc xung thp ti b nhn. Nguyn l hot ng ca b trn
l dng tn s dao ng ni (LO) ng ngt tn s v tuyn
(RF) chuyn i thnh tn hiu trung tn (IF), [1-8].
Php nhn c thc hin vi hai tn hiu ti ng vo,
tng ng vi vic ng ngt mch nguyn l:
1 1
sin( ) a A t = + (1)
2 2
sin( ) b B t = + (2)
Kt qu ca php nhn tn hiu:
1 1 2 2
. sin( ).sin( ) a b AB t t = + + (3)
S dng php bin i lng gic, ta t c:
. [cos(( ) ( )) cos(( ) ( ))]
1 2 1 2 1 2 1 2
2
AB
a b t t = + + +
(4)
thc hin vic chuyn i tn s ln cao:
1 2 1 2
cos(( ) ( )) t + + + (5)
chuyn i tn s xung thp:
1 2 1 2
cos(( ) ( )) t (6)
II. M T B TRN GILBERT CELL
B trn c hai dng: tch cc v th ng. Thng thng
trong cc h thng i hi cng sut tiu th siu thp, ta s
dng dng th ng v tuyn tnh cao v khng tiu th
cng sut. Nhng b hao tn khi chuyn i tn hiu v h s
nhiu cao hn dng tch cc. Vic s dng b trn th ng
cn c ng dng trong cc thit k siu cao tn khi m
cc transistor khng cn p ng c.
B trn tch cc thng c s dng c hai loi cn bn
n v cn bng i. Cu trc loi cn bng n th n gin
hn loi cn bng i v cng sut tiu th thp hn nhng
cch ly gia tn hiu trung tn vi tn hiu v tuyn v tn s
giao ng ni rt thp, iu ny gy nhiu ng ra rt ln.
Sau y l nhng imtch cc v hn ch ca b trn cu
trc cn bng i:
A. u im
C tn s giao ng ni v tn s v tuyn u cn bng
nn b loi b gn nh hon ton ti ng ra, tuy nhin t
c iu ny khng ch ph thuc vo l thuyt m trong
qu trnh thit k mch vt l cng rt quan trng.
Hu ht cc ng vo ra ca b trn c cch ly v mt
cu trc v hot ng ca mch gn nh l cc cng tc ng
ngt.
tuyn tnh cao hn so vi kin trc cn bng n.
t nhy vi ngun cung cp so vi cc cu trc khc.
Gi tr im nn cao hn.

B. Nhc im
to ra tn s giao ng ni tiu tn cng sut v bin
ca tn s giao ng ni phi ln ng ngt hon ton cc
transistor.
Thng thng b trn thng c kt ni vi mt b
khuych i cng sut hoc b khuych i nhiu thp ti b
thu hoc pht nn yu cu hai b chuyn i t n cc sang
vi sai. Do din tch ca ton h thng s tng ln.

C. Nguyn l hot ng ca b trn
Tn hiu v tuyn c p vo hai transistor T5 v T6
nhmchuyn i tn hiu t in th sang dng in. y
cn ch n gi tr in th mt chiu ca tn hiu u vo,
in th ny phi ln hn tng gi tr ca in p ngng hai
transistor T5, T6 v in th ngun-mng ca ngun dng
cung cp. Tuy nhin mbo tuyn tnh ca mch th
hai transistor T5, T6 phi hot ng trong vng tuyn tnh
(Vds <Vgs-Vth). Thm in tr vo hai cc ngun ca hai
transistor T5, T6 tng tuyn tnh cho mch iu ny
ng ngha vi vic lmgim i li ca mch.

Hnh. 1. Cu trc thng gp ca b trn tn Gilbert cell.

Cc transistor (T1, T4) v (T2, T3) to thnh nhng cp
lmnhimv ng ngt khi c p vo tn s giao ng ni
nghch pha. Hai transistor T5, T6 cung cp tn hiu v tuyn
dng dng in nghch pha, T1v T3 s ng ngt gia chng
to ra sng trung tn ti u ra ti pha bn tri. Ngc li
T2, T4 s ng ngt gia chng to ra sng trung tn ti
u ra ti pha bn phi. Hai in tr ti chuyn dng in
sang in th sng trung tn dng vi sai ti ng ra.

III. THC HIN MCH NGUYN L
A. Gain Conversion, Noise Figure and IIP3
Tun t cc bc thit k b trn cn bng i c bn:
(1) Select a value for Rs. If we start with the LNA design ,
Rs will be realized by an inductor Ls.
(2) Using the design equations from(10) to (15 ) decide on
the IM3 value required to calculate the voltage overdrive
(Vgs-VT).
(3) Calculate gm and check for compliance of mixer
gain with a suitable load resistance by using the equations
from(7) to (9).
(4) Determine LO switching W by selecting minimumL
allowed and assuming that the overdrive voltage (Vgs-V T )
will be between 0.2 and 0.4V.
Base on the Conversion Gain that we choose. We can
calculate the wide channel of RF input MOSFET.


2
1
L
S
R
CG
R
gm
| |
|
| =
t
|
+
|
\ .
(7)
( )
[ , ]
[ , ]
'
n p
n p GS TH
W
gm k V V
L
= (8)
[ , ] [ , ]
' .
ox
n p eff n p
ox
k
t
c
= (9)

This results in the following equations for 1dB gain
compression point and IM3.
2
. .
.
od
DSAT vsat ox
od sat
V
I w C
V E L
=
+
(10)
2
sat
sat
eff
V
E =

(11)
0
1 .
eff
od
V

=
+
(12)
2
1 1
1
1
. . .
0.29. . 1 1
. 4 . 2 .
sat od od
dB od
sat sat
V L V V
P V
Rs V L V L
| || |
= + +
| |

\ .\ .
(13)

to convert to dBm=10 log (1000*P1dB) (3.8)

2
1 1
3
1
. . . 8
. . 1 1
3 . 4 . 2 .
sat od od
IIP od
sat sat
V L V V
P V
Rs V L V L
=
| || |
+ +
| |

\ .\ .
(14)
1 0
2 .
sat
V L = + (15)
B. Thit k mch nguyn l s dng in tr lm tng
tuyn tnh


Hnh. 2. Mch nguyn l b trn Gilbert cell s dng in tr
lm tng tuyn tnh.

Bng. 1. Kch thc cc linh kin c s dng thit k b
trn Gilbert cell.

Linh kin Gi tr n v
R1 500 Ohm
Rs 50 Ohm
NMOS [0:3] W/L =75/0.35 m
NMOS [4:5] W/L =150/0.35 m
NMOS 6 W/L =300/0.35 m
NMOS 7 W/L =1/0.2 m
NMOS [8:9] W/L =1/1 m
PMOS 0 W/L =1/1 m
R (1,5,6) 10-36-36 KOhm
C [0:1] 7.35 pF

C. Thit k b trn tn Gilbert cell s dng cun cm lm
tng tuyn tnh.
We saw how the introduction of the source resistor Rs
greatly improved the linearity of the mixer. However,
using a resistor will cause a voltage drop and hence an needed
increase in the voltage rails to ensure the devices remain in
saturation. Another important problem with using a resistor
is the noise it will generate. The solution is to use a lossless
component an inductor.
There are a number of issues when using an inductor Ls
one being the circuit will now be more frequency
dependant. A second issue is that inductors used in CMOS
tend to have low Quality (Q) factors typically 2 to 3. Thirdly
the addition of the source inductor will have a significant
effect on the input impedance (Re) and will need to be
checked to ensure the impedance is not negative (which may
cause instability!).
We can set up a S-parameter simulation to alter the
value of Ls to determine the input resistive impedance. To
ensure the simulation will work the switching transistors
are biased on using two voltage sources.
With a source de-generation inductor of value 12.7 nH
results in an input impedance of ~ 50 ohms (Rs =34
ohms). If 100 ohm input impedance is required (If
connecting to a balun) then Ls =38 nH.
When we add an inductor we are in fact adding an
inductor with an added series resistance dependant on the Q
(Quality factor) of the inductor:
.
2.
L
Q
R
e
= (16)
IV. KT QU M PHNG
A. Kt qu m phng b trn tn Gilbert cell s dng in
tr lm tng tuyn tnh.


Hnh. 3. M phng cch ly gia tn s v tuyn, tn s
giao ng ni v tn hiu trung tn ti cc cng.

Bng. 2. cch ly gia tn s v tuyn, tn s giao ng
ni v tn hiu trung tn ti cc cng.

LO-to-IF
feedthrough
LO-to-RF
feedthrough
RF-to-LO
feedthrough
RF-to-IF
feedthrough
-124.8dB -289.1dB -279.9dB -138.6dB


Hnh. 4. li chuyn i.



Hnh. 5. M phng thu c im nn bc 1 v IIP3.


Hnh. 6. Kt qu m phng h s tp m.


Bng. 3. Cc thng s c tnh ca b trn dng in tr
lm tng tuyn tnh.

Thams Gi tr n v
li chuyn i 8.012 dB
H s tp m 10 dB
Dng tiu th 2.96 mA
IIP3 3.15 dBm
Cng sut tn s giao
ng ni
15 dBm
in th cung cp 1.8 V
Tn s sng v tuyn 433 MHz
Cng ngh ch to GP 0.13 m

B. Kt qu m phng b trn s dng cun cm lm tng
tuyn tnh.

Hnh. 7. M phng cch ly gia tn s v tuyn, tn s
giao ng ni v tn hiu trung tn ti cc cng.


Bng. 4. cch ly gia tn s v tuyn, tn s giao ng
ni v tn hiu trung tn ti cc cng.

LO-to-IF
feedthrough
LO-to-RF
feedthrough
RF-to-LO
feedthrough
RF-to-IF
feedthrough
-89.46dB -175.8dB -143.0dB -123.2dB



Hnh. 8. li chuyn i.

Hnh. 9. Kt qu m phng h s tp m.

Hnh. 10. M phng thu c imnn bc 1 v IIP3.

Bng. 5. Cc thng s c tnh ca b trn dng cun cm
lm tng tuyn tnh.

Parameter Value Unit
li chuyn i 11.91 dB
H s tp m 6.7 dB
Dng tiu th 2.88 mA
IIP3 -4.58 dBm
Cng sut tn s giao
ng ni
15 dBm
in th cung cp 1.8 V
Tn s sng v tuyn 433 MHz
Cng ngh ch to GP 0.13 m

V. LAYOUT IMPLEMENTATION

Hnh. 11. Thit k vt l b trn tn s dng in tr lm tng
tuyn tnh.


Hnh. 12. Thit k vt l b trn tn s dng cun cmlm
tng tuyn tnh.

Bng. 6. Din tch ca hai thit k vt l b trn tn.

Thit k vt l Din tch n v
B trn s dng
in tr
310*120 2
m
B trn s dng
cun dy
720*315 2
m

If we replace the source resistor by the inductor, the area of
the layout is larger four times than conventional design.
Therefore, if there is no request too strict about the gain and
noise factor paramters, we should choose the design with
source resistor to reduce the layout area of the system.
Bng. 7. : Tmtt v so snh kt qu thit k t c v
nhng thit k c ng ti
c tnh Reference This work
[11] [12] [13]
in th cung
cp (V)
1.8 1.8 3 1.8
Tn s sng v
tuyn (MHz)
2400 1400
3600
1900 433
Tn s giao
ng ni (MHz)
2050 1390-
3590
- 425
Dng in tiu
th (mA)
14.56 6.5 3.5 2.1
Cng sut tn s
giao ng ni
4 -8 -25 15
(dBm)
H s tp mv
mt pha (dB)
17.5 20.8-
23.2
13.6 6.7/10
li chuyn
i (dB)
-5.3 4.3-6.9 12.8 8/11.9
IIP3 (dBm) 8.6 -0.5-2.6 0.068 -4.58/3.15
imnn 1dB
(dBm)
1 -12.9
13.9
- -13/-6.58



VI. TNG KT V THO LUN
This paper described the design flow and simulation of a
MOS Gilbert cell in differential mixer by using the Spectre
in order to predict the various physical circuit parameters
of gain, noise figure and linearity. The design process based
on the 0.13 mGlobalfoundries technology. Moreover, the
mixer could be optimized the gain of the mixer, the output
load, SSB noise figure or the linearity.
The mixer consumes 5.2 mW fromthe 1.8 V power
supply. Depended upon the purpose of systemrequirement,
the reasonable mixer type is chosen with or without inductor.

ACKNOWLEDGEMENT
Our first and deepest thanks to Vietnam National
University Hochiminh city (VNU HCM) for the grant in the
formof a VNU HCM research project with Code number:
B2011-40-04.
TI LIU THAM KHO
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