FEATURES

D TrenchFETr Power MOSFET

Si4431ADY
Vishay Siliconix
Document Number: 71803
S-95713Rev. C, 18-Feb-02
www.vishay.com
1
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V) r
DS(on)
(W) I
D
(A)
- 30
0.030 @ V
GS
= - 10 V - 7.2
- 30
0.052 @ V
GS
= - 4.5 V - 5.5
S D
S D
S D
G D
SO-8
5
6
7
8
Top View
2
3
4
1
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage V
DS
- 30
V
Gate-Source Voltage V
GS "20
V
Continuous Drain Current (T
J
= 150_C)
a
T
A
= 25_C
I
D
- 7.2 - 5.3
Continuous Drain Current (T
J
= 150_C)
a
T
A
= 70_C
I
D
- 5.8 - 4.2
A
Pulsed Drain Current I
DM
- 30
A
continuous Source Current (Diode Conduction)
a
I
S
- 2.1 - 1.3
Maximum Power Dissipation
a
T
A
= 25_C
P
D
2.5 1.35
W Maximum Power Dissipation
a
T
A
= 70_C
P
D
1.6 0.87
W
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to 150 _C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
M i J ti t A bi t
a
t v 10 sec
R
35 50
Maximum Junction-to-Ambient
a
Steady State
R
thJA
75 92
_C/W
Maximum Junction-to-Foot Steady State R
thJF
17 25
C/W
Notes
a. Surface Mounted on 1 x 1 FR4 Board.
Si4431ADY
Vishay Siliconix
www.vishay.com
2
Document Number: 71803
S-95713Rev. C, 18-Feb-02
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= - 250 mA - 1.0 V
Gate-Body Leakage I
GSS
V
DS
= 0 V, V
GS
= "20 V "100 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= - 24 V, V
GS
= 0 V - 1
mA Zero Gate Voltage Drain Current I
DSS
V
DS
= - 24 V, V
GS
= 0 V, T
J
= 70_C - 10
mA
On State Drain Current
a
I
D( )
V
DS
= - 5 V, V
GS
= - 10 V - 30 A
On-State Drain Current
a
I
D(on)
V
DS
= - 5 V, V
GS
= - 4.5 V - 7 A
Drain Source On State Resistance
a
r
DS( )
V
GS
= - 10 V, I
D
= - 7.2 A 0.024 0.030
W Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= - 4.5 V, I
D
= - 5.0 A 0.040 0.052
W
Forward Transconductance
a
g
fs V
DS
= - 15 V, I
D
= - 7.2 A 14 S
Diode Forward Voltage
a
V
SD
I
S
= - 2.1 A, V
GS
= 0 V - 0.78 - 1.1 V
Dynamic
b
Total Gate Charge Q
g
12 20
Gate-Source Charge Q
gs
V
DS
= - 15 V, V
GS
= - 5 V, I
D
= - 7.2 A 4.7 nC
Gate-Drain Charge Q
gd
3.7
Turn-On Delay Time t
d(on)
12 20
Rise Time t
r
V
DD
= - 15 V, R
L
= 15 W
15 20
Turn-Off Delay Time t
d(off)
V
DD
= - 15 V, R
L
= 15 W
I
D
^ - 1 A, V
GEN
= - 10 V, R
G
= 6 W
40 60 ns
Fall Time t
f
20 25
Source-Drain Reverse Recovery Time t
rr
I
F
= - 2.1 A, di/dt = 100 A/ms 30 80
Notes
a. Pulse test; pulse width v300 ms, duty cycle v2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
6
12
18
24
30
0 1 2 3 4 5
0
6
12
18
24
30
0 1 2 3 4 5
V
GS
= 10 thru 5 V
T
C
= 125_C
- 55_C
25_C
Output Characteristics Transfer Characteristics
V
DS
- Drain-to-Source Voltage (V)
-


D
r
a
i
n

C
u
r
r
e
n
t

(
A
)
I
D
V
GS
- Gate-to-Source Voltage (V)
-


D
r
a
i
n

C
u
r
r
e
n
t

(
A
)
I
D
4 V
3 V
Si4431ADY
Vishay Siliconix
Document Number: 71803
S-95713Rev. C, 18-Feb-02
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
-


O
n
-
R
e
s
i
s
t
a
n
c
e

(
r
D
S
(
o
n
)
W
)
0
400
800
1200
1600
2000
0 6 12 18 24 30
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 25 50 75 100 125 150
0
2
4
6
8
10
0 3 6 9 12 15 18 21 24
0.00
0.02
0.04
0.06
0.08
0.10
0 6 12 18 24 30
V
DS
- Drain-to-Source Voltage (V)
C
rss
C
oss
C
iss
V
DS
= 15 V
I
D
= 7.2 A
I
D
- Drain Current (A)
V
GS
= 10 V
I
D
= 7.2 A
V
GS
= 10 V
Gate Charge
On-Resistance vs. Drain Current
-


G
a
t
e
-
t
o
-
S
o
u
r
c
e

V
o
l
t
a
g
e

(
V
)
Q
g
- Total Gate Charge (nC)
C


-


C
a
p
a
c
i
t
a
n
c
e

(
p
F
)
V
G
S
Capacitance
On-Resistance vs. Junction Temperature
T
J
- Junction Temperature (_C)
(
N
o
r
m
a
l
i
z
e
d
)
-


O
n
-
R
e
s
i
s
t
a
n
c
e

(
r
D
S
(
o
n
)
W
)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.00
0.05
0.10
0.15
0.20
0 2 4 6 8 10
T
J
= 25_C
I
D
= 7.2 A
30
10
1
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
-


O
n
-
R
e
s
i
s
t
a
n
c
e

(
r
D
S
(
o
n
)
W
)
V
SD
- Source-to-Drain Voltage (V) V
GS
- Gate-to-Source Voltage (V)
-


S
o
u
r
c
e

C
u
r
r
e
n
t

(
A
)
I
S
V
GS
= 4.5 V
T
J
= 150_C
Si4431ADY
Vishay Siliconix
www.vishay.com
4
Document Number: 71803
S-95713Rev. C, 18-Feb-02
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
24
40
8
16
P
o
w
e
r


(
W
)
Single Pulse Power, Junction-to-Ambient
Time (sec)
32
10
-3
10
-2
1 10 600 10
-1
10
-4
100
- 0.4
- 0.2
0.0
0.2
0.4
0.6
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 mA
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Threshold Voltage
V
a
r
i
a
n
c
e

(
V
)
V
G
S
(
t
h
)
T
J
- Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
N
o
r
m
a
l
i
z
e
d

E
f
f
e
c
t
i
v
e

T
r
a
n
s
i
e
n
t
T
h
e
r
m
a
l

I
m
p
e
d
a
n
c
e
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 75_C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
10
-3
10
-2
1 10 10
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (sec)
N
o
r
m
a
l
i
z
e
d

E
f
f
e
c
t
i
v
e

T
r
a
n
s
i
e
n
t
T
h
e
r
m
a
l

I
m
p
e
d
a
n
c
e
1 600 10 10
-1
10
-2
100