MITSUBISHI

MITSUBISHI
NchNch
IGBT
IGBT

CT60AM-18F
CT60AM-18F
INSULATED
INSULATED
GATE
GATE
BIPOLAR
BIPOLAR
TRANSISTOR
TRANSISTOR

CT60AM-18F

OUTLINE DRAWING

Dimensions in mm
5
2

20MAX.

3.2

2.5

26

20.6MIN.

0.5
3

5.45 5.45

4.0

VCES ............................................................................... 900V

IC ......................................................................................... 60A
Integrated Fast-recovery diode
Small tail loss
Low VCE(sat)

GATE
COLLECTOR
EMITTER
COLLECTOR

TO-3PL

APPLICATION
Microwave oven, Electromagnetic cooking devices, Rice-cookers

MAXIMUM RATINGS
Symbol

(Tc = 25C)

Parameter

Ratings

Unit

900

Gate-Emitter Voltage
Peak Gate-Emitter Voltage

25
30

V
V

IC
ICM

Collector Current
Collector Current (Pulse)

60
120

A
A

IE
PC

Emitter Current
Maximum Power Dissipation

40
180

A
W

Tj

Junction Temperature

40 ~ +150

T stg

Storage Temperature

40 ~ +150

VCES

Collector-Emitter Voltage

VGES
VGEM

Conditions
VGE = 0V

Sep. 2001

MITSUBISHI Nch IGBT

CT60AM-18F
INSULATED GATE BIPOLAR TRANSISTOR
ELECTRICAL CHARACTERISTICS
Symbol

(Tch = 25C)

Parameter

Limits

Test conditions
VCE = 900V, VGE = 0V

Unit

Min.

Typ.

Max.

1.0
0.5

mA
A

2.0

4.0
2.1

6.0
2.7

V
V

4400

pF

115
75

pF
pF

0.05
0.1

s
s

0.2
0.3

s
s

0.6
6.0

1.0
12

mJ/pls
A

ICES
IGES

Collector-emitter leakage current

Gate-emitter leakage current

VGE(th)
VCE(sat)

Gate-emitter threshold voltage

Collector-emitter saturation voltage

Cies

Input capacitance

Coes
Cres

Output capacitance
Reverse transfer capacitance

td(on)
tr

Turn-on delay time

Turn-on rise time

td(off)
tf

Turn-off delay time

Turn-off fall time

Etail
Itail

Tail loss
Tail current

ICP = 60A, Tj = 125C, dv/dt = 200V/s

VEC

Emitter-collector voltage

IE = 60A, VGE = 0V

2.2

3.0

trr
Rth(j-c)

Diode reverse recovery time

Thermal resistance (IGBT)

IE = 60A, dis/dt = 20A/s

0.5

2.0
0.69

s
C/W

Rth(j-c)

Thermal resistance (Diode)

4.0

C/W

VGE = 20V, VCE = 0V

VCE = 10V, IC = 6mA
IC = 60A, VGE = 15V
VCE = 25V, VGE = 0V, f = 1MHz

VCC = 300V, IC = 60A, VGE = 15V, RG = 10

Junction to case
Junction to case

PERFORMANCE CURVES

COLLECTOR CURRENT IC (A)

160

Tc = 25C
Pulse Test

PD = 180W
VGE = 20V

120

COLLECTOR-EMITTER
SATURATION VOLTAGE VCE(sat) (V)

COLLECTOR CURRENT VS.

COLLECTOR-EMITTER VOLTAGE
(TYPICAL)

15V 10V
9V

8V

80
7V

40

COLLECTOR-EMITTER VOLTAGE VCE (V)

COLLECTOR-EMITTER SATURATION
VOLTAGE VS. GATE-EMITTER VOLTAGE
(TYPICAL)
5
Tc = 25C
Pulse Test

4
IC = 120A

60A

30A
15A

12

16

20

GATE-EMITTER VOLTAGE VGE (V)

Sep. 2001

MITSUBISHI Nch IGBT

CT60AM-18F
INSULATED GATE BIPOLAR TRANSISTOR
CAPACITANCE VS.
COLLECTOR-EMITTER VOLTAGE
(TYPICAL)

COLLECTOR CURRENT IC (A)

160

CAPACITANCE Cies, Coes, Cres (pF)

COLLECTOR CURRENT VS.

GATE-EMITTER VOLTAGE
(TYPICAL)
Tc = 25C
VCE = 5V
Pulse Test

120

80

40

12

16

SWITCHING CHARACTERISTICS
(TYPICAL)

SWITCHING TIME (ns)

5
3

td(off)

tf

102

tr

7
5
td(on)

Cies

103
7
5
3
2

102
Coes

7
5

Tj = 25C
3 VGE = 0V
2
f = 1MHz

Tj = 25C
VCC = 300V
VGE = 15V
IC = 60A

7
5
3
2

td(off)

103
7
5
tf

3
2

102

tr

7
5

td(on)

3
2

101 0
10

5 7 101

101 0
10

5 7 102

GATE-EMITTER VOLTAGE
VS. GATE CHARGE CHARACTERISTIC
(TYPICAL)
20
IC = 60A
Tj = 25C

16

VCE = 250V
600V

12

400V

50

100 150 200 250 300 350

GATE CHARGE Qg (nc)

5 7 101

5 7 102

GATE RESISTANCE RG ()

EMITTER CURRENT VS.

EMITTER-COLLECTOR VOLTAGE
(TYPICAL)
100

EMITTER CURRENT IE (A)

GATE-EMITTER VOLTAGE VGE (V)

COLLECTOR CURRENT IC (A)

Cres

101
10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103

SWITCHING TIME VS. GATE RESISTANCE

(TYPICAL)
104

SWITCHING TIME (ns)

Tj = 25C
VCC = 300V
VGE = 15V
RG = 10

7
5
3
2

COLLECTOR-EMITTER VOLTAGE VCE (V)

GATE-EMITTER VOLTAGE VGE (V)

103

104

Tc = 25C
VGE = 0V
Pulse Test

80

60

40

20

0.8

1.6

2.4

3.2

EMITTER-COLLECTOR VOLTAGE VEC (V)

Sep. 2001

MITSUBISHI Nch IGBT

CT60AM-18F
INSULATED GATE BIPOLAR TRANSISTOR

JUNCTION TEMPERATURE
(TYPICAL)
8

VGE (th) (V)

VOLTAGE

IC = 6mA

6
5
4
3
2
1
0
40

40

80

120

Zth (j c) (C/ W)

JUNCTION TEMPERATURE

TRANSIENT THERMAL IMPEDANCE

GATE-EMITTER THRESHOLD

VCE = 10V

150

T j (C)

TRANSIENT THERMAL IMPEDANCE

Zth (j c) (C/ W)

THRESHOLD VOLTAGE VS.

IGBT TRANSIENT THERMAL IMPEDANCE

CHARACTERISTICS
100

104 2 3

5 7 103 2 3

5 7 102 2 3

5 7 101 2 3

5 7 100

7
5
4
3
2

101

101

5
4

5
4

102

5 7 105 2 3

PULSE WIDTH

102

5 7 104

tw (s)

DIODE TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS
101

103 2 3

5 7 102 2 3

5 7 101 2 3

5 7 100 2 3

5 7 101

7
5
3
2

100
7
5

7
5

101

101
7
5

7
5

102

5 7 105 2 3

PULSE WIDTH

5 7 104 2 3

102

5 7 103

tw (s)

Sep. 2001

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