BY GROUP 1

EZZAT MIRZA
AHMAD FITRI AFIQ
ZULRAIDI AHMAD
DANIAL MAUDUDI
MUHAMMAD HAEDIEL
Explain the differences between silicon and
germanium diodes for current/voltage
characteristics when diode is in forward
bias.
. An external voltage which decreases the potential barrier is said to act in the
Forward Bias direction.

if a forward-biasing voltage is applied across
the P-N junction, the depletion region
collapses becoming thinner. The diode
becomes less resistive to current through it.
In order for a sustained current to go through
the diode; though, the depletion region must
be fully collapsed by the applied voltage.
Forward Bias The voltage potential is connected positive, (+ve) to the P-type material
and negative, (-ve) to the N-type material across the diode which has the effect
of Decreasing the PN junction diode's width.

The negative voltage pushes or repels electrons towards the
junction giving them the energy to cross over and combine
with the holes being pushed in the opposite direction
towards the junction by the positive voltage.

External voltage becomes greater than the value of the
potential barrier, approx. 0.7 volts for silicon and 0.3 volts for
germanium, the potential barriers opposition will be
overcome and current will start to flow.


The chemical constituency of the P-N junction
comprising the diode accounts for its nominal forward
voltage figure, which is why silicon and germanium
diodes have such different forward voltages.
Forward voltage drop remains approximately equal
for a wide range of diode currents, meaning that
diode voltage drop not like that of a resistor or even a
normal (closed) switch. For most purposes of circuit
analysis, it may be assumed that the voltage drop
across a conducting diode remains constant at the
nominal figure and is not related to the amount of
current going through it.