Name: Naga Surya Sandeep Angara

UT Tyler ID: 5000432356

Date: 09/15/2014
Assignment-1 Solid State Devices

























Assignment-1

Source Code

%cl ear i ng hi st or y
cl c;
cl ear al l ;
cl ose al l ;

%Bol t zmann Const ant ( eV/ K)
k1=8. 62e- 5;
%Bol t zmann Const ant ( J / K)
k=( 1. 38*( 10^( - 23) ) )
%Pl anks Const ant ( J - s)
h=6. 63e- 34;
%El ect r oni c r est mass( kg)
m0=9. 11e- 31;
%Temper at ur e
T=500: - 5: 250;
t =1000. / T;

%ef f ect i ve mass of si ( el ect r ons and hol es)
mn_Si =1. 1*m0;
mp_Si =0. 56*m0;
%ef f ect i ve mass of Ge ( el ect r ons and hol es)
mn_Ge=0. 55*m0;
mp_Ge=0. 37*m0;
%ef f ect i ve mass of GaAs ( el ect r ons and hol es)
mn_GaAs=0. 067*m0;
mp_GaAs=0. 48*m0;

%Band gap ener gy of si at 0 Kel vi n
Eg_Si =1. 11
%Band gap ener gy of Ge at 0 Kel vi n
Eg_Ge=0. 67
%Band gap ener gy of GaAs at 0 Kel vi n
Eg_GaAs=1. 43

%I nt r i nsi c concent r at i on of Si
ni _Si =2. *( ( 2. *pi . *k. *T) . / h. ^( 2) ) . ^( 1. 5) . *( mn_Si . *mp_Si ) . ^( 0. 75) . *exp( -
Eg_Si . / ( 2. *k1. *T) ) *( 10^- 6) ;
%I nt r i nsi c concent r at i on of Ge
ni _Ge=2. *( ( 2. *pi . *k. *T) . / h. ^( 2) ) . ^( 1. 5) . *( mn_Ge. *mp_Ge) . ^( 0. 75) . *exp( -
Eg_Ge. / ( 2. *k1. *T) ) *10^( - 6) ;
%I nt r i nsi c concent r at i on of GaAs
ni _GaAs=2. *( ( 2. *pi . *k. *T) . / h. ^( 2) ) . ^( 1. 5) . *( mn_GaAs. *mp_GaAs) . ^( 0. 75) . *exp( -
Eg_GaAs. / ( 2. *k1. *T) ) *10^( - 6) ;

%Di spl ay out put on scr een
f i gur e( 1)
semi l ogy( t , ni _Si , ' r . ' , ' Li neWi dt h' , 2) ;
hol d on;
semi l ogy( t , ni _Ge, ' g: ' , ' Li neWi dt h' , 2) ;
hol d on
semi l ogy( t , ni _GaAs, ' b- ' , ' Li neWi dt h' , 2) ;
gr i d on;
xl abel ( ' 1000/ T TEMPERATURE [ K] ' )
yl abel ( ' I NTRI NSI C CARRI ER CONC n_{ i } [ / cm^{3}] ' )
l egend( ' Si ' , ' Ge' , ' GaAs' ) ;

%pl ot t i ng a ver t i cal l i ne at T=300K
hx = gr aph2d. const ant l i ne( 1000/ 300, ' Li neSt yl e' , ' - . ' , ' Li neWi dt h' , 2,
' col or ' , [ 0. 3 0. 3 0. 3] ) ;
changedependvar ( hx, ' x' ) ;

Results: