Group Compound Formula Bandgap Type Mobility

µe µh
Silicon Carbide SiC 3.26eV
IV Silicon Germanium SiGe

Aluminum Antimonide AlSb 1.58eV Indirect 200 400

Aluminum Arsenide AlAs 2.12eV Indirect 200
Aluminum Nitride AlN 6.2eV Direct 300
Aluminum Phosphide AlP 2.5eV Indirect
Boron Arsenide BAs 1.5eV Indirect
Boron Nitride BN 5.2eV Direct 200
Boron Phosphide BP 2.0eV Indirect 5400
Gallium Antimonide GaSb 0.72eV Direct 3000 1400
Gallium Arsenide GaAs 1.435eV Direct 8500 420
Gallium Nitride GaN 3.49eV Direct 440 30
Gallium Phosphide GaP 2.261eV Indirect 250 120
Indium Antimonide InSb 0.18eV Direct 78000 1700
Indium Arsenide InAs 0.35eV Direct 33000 460
Indium Nitride InN 0.7eV Direct 3200
III-V Indium Phosphide InP 1.351eV Direct 6060 150

Cadmium Selenide CdSe 1.74eV Direct 650

Cadmium Sulphide CdS 2.38eV Direct 350 15
Cadmium Telluride CdTe 1.44eV Direct 1050 80
Zinc Oxide ZnO 3.3eV Direct 2000
Zinc Selenide ZnSe 2.67eV Direct 530 28
Zinc Sulphide ZnS 3.66eV Direct 140 5
Zinc Telluride ZnTe 2.26eV Direct 340 110
Mercuric Selenide HgSe
Mercuric Sulphide HgS 2.1eV Direct
II-VI Mercuric Tllluride HgTe

Cuprous Chloride CuCl 3.395eV Direct

Cuprous Iodide CuI 3.115eV Direct
Cuprous Bromide CuBr 3.077eV Direct
Silver Chloride AgCl 3.249eV Indirect
Silver Iodide AgI 3.024eV Direct
I-VII Silver Bomide AgBr 2.684eV Indirect

Cadmium Antimonide Cd3Sb2 0.49

Cadmium Arsenide Cd3As2 -0.19
Cadmium Phosphide Cd3P2
Zinc Antimonide Zn3Sb2
Zinc Arsenide Zn3As2
II-V Zinc Phosphide Zn3P2

Lead Selenide PbSe 0.28

Lead Sulphide PbS 0.41
Lead Telluride PbTe 0.31

IV-VI
 Tin Sulphide SnS
IV-VI Tin Telluride SnTe

V-VI Bismuth Telluride Bi2Te3 0.13

Crystal Structure ZB Zinc Blende

W Wutzite
Sp Sphalerite
RS Rock Salt
ZB
ZB
W

Sp
ZB
ZB

ZB
W
ZB
ZB

hexagonal
ZB

W / ZB
ZB
W / ZB
RS
W / ZB
Sp

Trigonal/ Cubic

Cubic
Cubic
Cubic
Cubic
Hexagonal
Cubic
Group Compound Formula Bandgap

Aluminum Gallium Antimonide AlxGa1-xSb 0.73+1.1x+0.47x²

1.424+1.247x, x<0.45
Aluminum Gallium Arsenide AlxGa1-xAs 1.424+1.087x+0.438x², x>0.45
Aluminum Gallium Nitride AlGaN
Aluminum Gallium Phosphide AlGaP
Aluminum Indium Antimonide AlxIn1-xSb 0.172+1.621x+0.43x²
Aluminum Indium Arsenide AlxIn1-xAs 0.36+2.35x+0.24x²
Aluminum Indium Phosphide AlxIn1-xP 1.34+2.23x
III-V Gallium Arsenide Antimonide GaAsxSb1-x 0.73-0.52x+1.2x²
Gallium Arsenide Nitride GaAsN
Gallium Arsenide Phosphide GaAsxP1-x 1.424+1.172x+0.186x²
Indium Arsenide Antimonide InAsxSb1-x 0.18-0.41x+0.58x²
Indium Arsenide Phosphide InAsxP1-x 0.356+0.675x+0.32x²
Indium Gallium Antimonide InxGa1-xSb 0.172+0.165x+0.413x²
Indium Gallium Arsenide InxGa1-xAs 0.356+0.7x+0.4x²
Indium Gallium Nitride InGaN
Gallium Indium Phosphide GaxIn1-xP 1.34+0.511x+0.6043x²

Cadmium Zinc Telluride CdZnTe

Mercury Cadmium Telluride HgCdTe
II-VI
Mercury Zinc Selenide HgZnSe
Mercury Zinc Telluride HgZnte

Lead Tin Telluride PbSnTe

IV-VI Thallium Tin Telluride Tl2SnTe5
Thallium Germanium Telluride Tl2GeTe6
 0.84 - 2.1

1.55 - 2.55

0.34 - 1.98
0.6 - 2.67
1.563 - 3.347
0.69 - 1.25

1.54 - 2.63
0.14 - 0.28
0.43 - 1.22
0.19 - 0.66
0.43 - 1.31

1.39 - 2.29
Group Compound Formula Bandgap

Aluminum Gallium Indium Phosphide AlGaInP

Aluminum Gallium Arsenide Nitride AlGaAsN
Aluminum Gallium Arsenide Phosphide AlGaAsP
Aluminum Indium Arsenide Nitride AlInAsN
Aluminum Indium Arsenide Phosphide AlInAsP
Gallium Arsenide Anitmonide Nitride GaAsSbN
Indium Gallium Arsenide Nitride InGaAsN
III-V Indium Gallium Arsenide Phosphide InGaAsP
 Waveleng Voltage
Color Semiconductor Material
th [nm] [V]
Gallium arsenide (GaAs)
Infrared λ > 760 ΔV < 1.9 Aluminium gallium arsenide (AlGaAs)
Aluminium gallium arsenide (AlGaAs)
Gallium arsenide phosphide (GaAsP)
610 < λ < 1.63 < ΔV Aluminium gallium indium phosphide (AlGaInP)
Red 760 < 2.03 Gallium(III) phosphide (GaP)
Gallium arsenide phosphide (GaAsP)
590 < λ < 2.03 < ΔV Aluminium gallium indium phosphide (AlGaInP)
Orange 610 < 2.10 Gallium(III) phosphide (GaP)
Gallium arsenide phosphide (GaAsP)
570 < λ < 2.10 < ΔV Aluminium gallium indium phosphide (AlGaInP)
Yellow 590 < 2.18 Gallium(III) phosphide (GaP)
Indium gallium nitride (InGaN) / Gallium(III) nitride
(GaN)
Gallium(III) phosphide (GaP)
500 < λ < 2.18 < ΔV Aluminium gallium indium phosphide (AlGaInP)
Green 570 < 4.0 Aluminium gallium phosphide (AlGaP)
Zinc selenide (ZnSe)
Indium gallium nitride (InGaN)
450 < λ < 2.48 < ΔV Silicon carbide (SiC) as substrate
Blue 500 < 3.7 Silicon (Si) as substrate — (under development)
400 < λ < 2.76 < ΔV
Violet 450 < 4.0 Indium gallium nitride (InGaN)
Dual blue/red LEDs,
multiple 2.48 < ΔV blue with red phosphor,
Purple types < 3.7 or white with purple plastic
diamond (C)
Aluminium nitride (AlN)
Aluminium gallium nitride (AlGaN)
3.1 < ΔV Aluminium gallium indium nitride (AlGaInN) — (down to
Ultraviolet λ < 400 < 4.4 210 nm[29])
Broad
White spectrum ΔV = 3.5 Blue/UV diode with yellow phosphor  
Group Compound Formula Bandgap

Quinary
Gallium Indium Nitride Arsenide Antimonide GaInNAsSb
III-V Gallium Indium Arsenide Antimonide Phosphide GaInAsSbP

Others
Bismuth Sulphide Bi2S3
Bismuth Iodide BiI3
Cuprous Oxide Cu2O
Cupric Oxide CuO 1.2
Gallium Selenide GaSe
Gallium Sulphide GaS 2.5
Lead Iodide PbI2
Mercury Iodide HgI2
Molybdenum DiSulphide MoS2
Platinum Silicide PtSi
Thallium Bromide TlBr
Tin Sulphide SnS
Titanium Dioxide TiO2
Uranium Dioxide UO2
Uranium Trioxide UO3