I HC QUC GIA TP HCM

TRNG I HC KHAO HC T NHIN

KHOA VT L

VT L MNG MNG
TI:

MNG T
GVHD: PGS.TS L VN HIU
NHM THC HIN
PHM TH XUN HNH
PHM THANH TM
L NGUYN BO TH
O VN THY

TP HCM 01-2010

MC LC
LI M U ...........................................................................................................................................1
1 TNG QUAN V MNG T .......................................................................................................2
1.1
nh ngha:....................................................................................................................................2
1.2
men t (magnetic domain).....................................................................................................4
2 CC PHNG PHP CH TO MNG T ..........................................................................6
2.1
Phng php phn x:................................................................................................................6
2.1.1 L thuyt v phng in phn x .............................................................................................6
2.1.2 Ch to mng mng bng phng php phn x ..................................................................10
2.1.3 C ch phn x ........................................................................................................................11
2.1.4 Hiu sut phn x ....................................................................................................................13
2.1.5 Cc yu t nh hng ln tc lng ng mng.................................................................16
2.1.6 Cc loi bia phn x ................................................................................................................18
2.2
Bc bay bng laze xung.............................................................................................................20
2.2.1 Nguyn l hot ng v qu trnh vt l ................................................................................20
2.2.2 Ch to mng mng ng hp thc........................................................................................22
2.3
Epitaxy chm phn t (MBE)..................................................................................................24
2.3.1 M t thit b............................................................................................................................24
2.3.2 Ch to mng mng tinh th cht lng cao..........................................................................26
3 CC PHNG PHP O TNH CHT CA MNG T ..................................................29
3.1
T k mu rung..........................................................................................................................29
3.1.1 Lch s......................................................................................................................................29
3.1.2 S lc......................................................................................................................................29
3.1.3 Cc php o c s dng t k mu rung ..............................................................................33
3.2
Knh hin vi lc t .....................................................................................................................34
3.2.1 Nguyn l hot ng ...............................................................................................................34
3.2.2 u im v hn ch .................................................................................................................35
4 NG DNG CA MNG T.....................................................................................................37
4.1
ng dng trong cm bin (sensors) v b dn ng (actuators) .......................................37
4.2
ng dng trong a t (platter)...............................................................................................40
4.3
ng dng trong u c /ghi ...................................................................................................41
4.4
Xu hng pht trin ..................................................................................................................42
4.4.1 Pht trin cc mng mng t ng dng trong PMR ..............................................................42
4.4.2 Mi trng ghi vung gc.......................................................................................................42
5

KT LUN .....................................................................................................................................46

TI LIU THAM KHO .................................................................................................................47

LI M U

tao cc vt liu mi, c kh nng ng dng cao trong thc tin.

Mt vt liu vi nhiu ng dng quan trng trong thi i ngy
nay chnh l mng t.
Cc linh kin in t hin nay, vi kh nng x l thng tin
nhanh v lng lu tr thng tin ln u c ch to t cc vt
liu t vi cu trc vi m (vi chc nanomet)
Mt s ng dng khc ca mng t nh lm u d (sensor), lm
b dn ng
Trong phm vi bo co ny, xin trnh by mt s vn c bn
L NGUYN BO TH

ca mng t
Phn 1: Gii thiu tng quan v mng t
Phn 2: Cc phng php ch toi mng t
Phn 3: Cc phng php o tnh cht ca mng t
Phn 4: ng dng ca mng t
Mc d c gng, nhng bo co chc vn con nhiu thiu st,
O VN THY

PHM THANH TM

PHM TH XUN HNH

Mng mng l mt lnh vc nghin cu rt rng trong vic ch

mong Thy v cc bn thm phn gp

hon thnh tt bo co ny, nhm xin chn thnh cm n s
quan tm ch bo tn tnh ca Thy L Vn Hiu.
Cc thnh vin nhm:
Phm Th Xun Hnh
Phm Thanh Tm
L Nguyn Bo Th
o Vn Thy

TP HCM 01-2010
Trang 1

MNG T

Tng quan

1
1.1

TNG QUAN V MNG T

nh ngha:
Mng t c cu to gm mt hay nhiu lp kim loi, hp kim hay oxit ca cc cht

c tnh cht t.

Vt liu st t:
+ Fe, Ni, Co, v cc hp kim ca chng
+ Oxides: Ferrite, Ni-Zn Ferrite
+ ionic crystals: CrBr3
Mng t c to ra bng cch:

Substrat
e
M

+ Phng php phn x

+ Bc bay bng xung lazer
+ Phng php epitaxy chm phn t
Bng 1-1 Tnh cht ca mt s loi vt liu st t

Substrat
e

Trang 2

Tng quan

MNG T

Bng 1-2 Tnh cht cc loi mng t

Trang 3

MNG T

Tng quan

1.2

men t (magnetic domain)

Khi nim v men t ln u tin c a ra vo nm 1907 bi Weiss
men t l nhng vng trong cht st t m trong cc mmen t hon ton song

song vi nhau
Vng chuyn tip ngn cch gia 2 men t lin k nhau. Gia hai men t, mmen
t khng th t ngt bin i v chiu v s dn n trng thi km bn do hnh thnh
nn vng chuyn tip l cc vch men (Domain Walls)
Nng lng trao i

JS 2
e =
Na 2
Nng lng khng ng hng

e KNa
J: Tng thay i dng
S: spin
A: khong cch nguyn t
N: S spin
K: Hng s khng ng hng

Hnh 1.1 Cu to vch t

Trang 4

MNG T

Tng quan

Cc loi vch t
+ Bloch
+ Neel
+ Cross-tie

Hnh 1.2 Cu to vch t

Hnh 1.3 Nng lng ca cc vch t theo dy mng

Trang 5

MNG T

Cc phng php ch to mng t

2
2.1

CC PHNG PHP
CH TO MNG T

Phng php phn x:

Phn x trong ting ting Anh l sputtering. Phn x cng thuc phng php lng

ng pha hi vt l bi v cc nguyn t, cm nguyn t hay phn t c to ra bng cch

bn ph ion mt phng php vt l. Trong phn x it (phn x hai in cc), nh s
phng in t trng thi plasma, cc ion nng lng cao (th d nh ion Ar+) bn ph ln bia
(vt liu cn phn x). Trong trng hp ny, bia l catt, di tc dng bn ph ca ion,
cc nguyn t b bt ra khi bia, lng ng ln b mt v hnh thnh lp mng mng (
ng thi cng l ant). Khi cn ty sch b mt th mu c gn ln catt ng vai tr bia,
chm ion nng lng cao bn ph ln b mt ca mu lm cho cc lp nguyn t ca tp
cht v mt phn nguyn t ngoi cng ca mu b ty, qu trnh ny gi l n mn phn x.
Ngy nay, c hai qu trnh lng ng v n mn phn x u c ng dng rt rng ri
trong khoa hc k thut cng nh trong i sng dn sinh. Chng ta s cp n cc vn
v nguyn l phng in phn x v phng php ch to mng mng bng k thut
phn x cao p mt chiu, cao tn v magnetron.
2.1.1
a

L thuyt v phng in phn x

Phn x cao p mt chiu
Trong phn x cao p mt chiu, ngi ta s dng

h chnh lu in th cao p (n vi kV) lm ngun cp

in p mt chiu t trn hai in cc trong chung
chn khng (hnh 2.1). Bia phn x chnh l catt phng
in, tu thuc vo thit b m din tch ca bia nm
trong khong t 10 n vi trm cm vung. Ant c th
l hoc ton b thnh chung chn khng. Khong

Hnh 2.1 S h phng

in cao p mt chiu (DC-

cch catt-ant ngn hn rt nhiu khong cch ngun- trong bc bay chn khng v
Trang 6

Cc phng php ch to mng t

MNG T

thng l di 10cm. Trong cc kh tr, argon c s dng phn x nhiu hn c, p

sut ca n c duy tr trong chung c 1 Torr. Plasma trong trng hp ny c hnh
thnh v duy tr nh ngun in cao p mt chiu. C ch hnh thnh plasma ging c ch
phng in lnh trong kh km. in t th cp pht x t catt c gia tc trong in
trng cao p, chng ion-ha cc nguyn t kh, do to ra lp plasma ( l trng thi
trung ha in tch ca vt cht m trong phn ln l cc ion dng v in t). Cc ion
kh Ar+ b ht v catt, bn ph ln vt liu lm bt cc nguyn t ra khi b mt catt. Tuy
nhin, hiu sut phn x trong trng hp ny l rt thp. Ngy nay phng php phn x
cao p mt chiu m khng s dng magnetron hu nh khng c s dng trong cng
ngh ch to mng.
b

Phn x cao tn
Thc ra, trong ting Anh thut ng ny l

Radio-Frequency sputtering, ngha l phn x tn

s radio, mt di tn s cao, cho nn chng ta
quen dng t cao tn ni v phng php
phn x tn s radio. in p t trn in cc
ca h chn khng l ngun xoay chiu tn s t
0,1 MHz tr ln, bin trong khong 0,5 n 1
kV. Trn hnh 2.2 l s h thit b phn x cao
tn c t in lm vic theo c ch phng in
trn a song song. Ph bin nht ngy nay l
ngun cao tn c tn s 13,56 MHz. Mt dng

Hnh 2.2 S h phng in cao tn c

t chn lm tng hiu sut

ion tng hp ti bia trong khong 1 mA/cm2, trong khi bin ca dng cao tn tng hp
cao hn rt nhiu (c khi ln gp mt bc hoc hn na). My pht cao tn c thit k
chuyn dng nng cao hiu qu phn x: mt t in c ghp ni tip nhm phn x
c tt c cc loi bia (trong c c bia kim loi). Mch in c thit k t b tr mt
cch hp l qu trnh truyn nng lng t ngun cng sut cao tn sang plasma t hiu
sut cao. Kch thc ca chung s dng trong phng php ny hon ton ging nh trong
Trang 7

Cc phng php ch to mng t

MNG T

phn x cao p mt chiu (trong nhiu trng hp, ngi ta thit k h phn x gm c hai
chc nng phn x cao tn v cao p mt chiu c th thc hin ng phn x t hai
ngun bia c thnh phn cu to khc nhau, trong ting Anh gi l cosputtering). Phn x
cao tn c nhiu u im hn so vi phn x cao p mt chiu, th d in p thp, phn x
trong p sut kh thp hn, tc phn x ln hn v c bit phn x c tt c cc loi
vt liu t kim loi n oxit hay cht cch in. Plasma trong phn x cao tn c hnh
thnh v duy tr nh ngun cao tn, cng ging nh qu trnh ion ha xy ra trong phn x
cao p. Tuy nhin, ngy nay phn x cao tn ring bit cng khng cn c s dng bi
hiu sut phn x vn cn cha cao. Ngi ta s dng magnetron khc phc nhc im
ny.
c

Magnetron
Magnetron l h thit b to ra phng in trong in trng c s dng nam chm.

Ngay t nhng nm 70 magnetron c thit k s dng trong cc h phn x cao p v

cao tn tng tc phn x. Magnetron l s phng in tng cng nh t trng ca
cc nam chm vnh cu (hoc nam chm in) t c nh di bia/catt (hnh 2.3). Nh
m t phn trn, vi cu hnh ca in cc trong c hai phng php phn x u c in
trng vung gc vi b mt bia. Nhng vi magnetron chng ta cn thy t trng ca cc
nam chm to ra ng sc vung gc vi in trng (c ngha l song song vi mt phng
ca bia). V th, t trng c tp trung v tng cng plasma vng gn bia. Magnetron
p dng vo trong c hai trng hp phn x u c tc dng nng cao hiu sut bn ph
ion, v do , tc phn x c ci thin rt nhiu. Ni chung, s phng in magnetron
vi vic kch thch bng cao p mt chiu hay cao tn c hiu sut cao hn hn so vi trng
hp phng in khng dng by in t (nh t trng ca cc nam chm). By gi chng
ta xem by in t lm vic nh th no? Cu hnh nh m t trn hnh 2.3 (a, b) to ra hiu
ng cun in t trong hng Chng ta c mt hiu ng Hall, chng l n dng cun ny
v c hng chuyn ng quanh bia nh nhng con quay (hnh 2.3c). Bn knh qu o
( ) ca con quay c xc nh bng cng thc:

Trang 8

Cc phng php ch to mng t

MNG T

m
qB

Trong :
m l khi lng ca in t,

l thnh phn vung gc ca tc in t i vi ng sc,

B l cm ng t.

Hnh 2.3 S nguyn l by in t bng t trng trong h phn x magnetron.

Nhn chung, trong cc h phn x thc, bn knh qu o c gi tr nh, ch khong

mt n vi milimt. V vy, s giam hm in t gn b mt bia l rt hiu qu. Cc in t
chuyn ng quanh ng sc cho n khi chng b tn x bi nguyn t. Trn thc t,
magnetron cn tn ti mt khong thi gian ngn sau khi lc khng cn, v cc in t vn
cn b by sau mt s lt chuyn ng vng quanh. hiu tt hn vn magnetron,
chng ta xem xt v d di y.
ng dng. Mt magnetron phng trong phn x cao p c in th trn catt l 600 V.
Tnh gi tr ca mt t trng cn thit by in t th cp trong 1 cm b mt catt.

Trang 9

MNG T

Cc phng php ch to mng t

Chng ta s thy (xem tip phn sau) in th hiu dng ( Vp Vcat ), vi Vp l in th

ca plasma, Vcat l in th catt, chnh l i lng sinh ra ng nng ln nht m ion c
th c khi va chm vi catt, n cng tng ng vi ng nng ca in t th cp trong
iu kin b qua va chm khi xuyn qua lp v (vng khng gian in tch trn b mt
catt) i vo trong plasma. Tc ca in t tnh c t cng thc:

m 2
= q (V p Vcat )
2
1/2

2 1.6 1019 600

=

9.1 1031

= 1.45 107 m / s

Trong hu ht cc trng hp plasma (s dng phn x cao p hoc cao tn) th b dy

ca lp v u nh hn 1 cm, cho nn c th ly gi tr trung bnh ca bn knh con quay l
0,5 cm (0,005 m). Vy chng ta c:

m 9.1 10311.45 107

B=
=
= 165G
q
1.6 1019 0.005
2.1.2

Ch to mng mng bng phng php phn x

Phn x l phng php s dng ion trong phng in cao p mt chiu hay cao tn

thc hin vic nh bt cc nguyn t t vt rn (bia) ra khi b mt ca n. Tip theo l

qu trnh lng ng cc nguyn t y trn b mt ca vt rn khc (tc l ). Do vy, ch
to vt liu bng phng php phn x l qu trnh chuyn cc nguyn t ca vt rn dng
khi ca bia sang dng mng mng trn . Nhn chung, phn x l qu trnh cng ngh xy
ra trong trng thi plasma, th hin ht sc phc tp. d hiu chng ta c th chia qu
trnh phn x ra thnh ba giai on:
1. Gia tc ion trong lp v plasma vng catt.
2. Ion bn ph vo bia, cc nguyn t trong bia chuyn ng va chm nhau.
3. Cc nguyn t thot ra khi bia v lng ng ln .
Trn hnh 2.4 m t qu trnh lng ng mng bng phng php phn x vi ba giai
on chnh nu trn. Di y l cc vn lin quan n thc nghim phn x p dng
ch to vt liu mng mng.
Trang 10

Cc phng php ch to mng t

MNG T

u im v nhc im ca phng php phn x

u im:
- Tt c cc loi vt liu u c th phn x, ngha l t nguyn t, hp kim hay hp
cht.
- Bia phn x thng dng c lu, bi v lp phn x rt mng.
- C th t bia theo nhiu hng, trong nhiu trng hp c th dng bia din tch ln,
do bia l ngun bc bay rt ln.
- Trong magnetron c th ch to mng mng t bia c cu hnh a dng, ph thuc
vo cch lp t nam chm, bia c th thit k theo hnh dng ca b mt (hnh cn
hoc hnh cu).
- Quy trnh phn x n nh, d lp li v d t ng ha.
- bm dnh ca mng vi rt tt.
Nhc im:
- Phn ln nng lng phn x tp trung ln bia, lm nng bia, cho nn phi c b lm
lnh bia.
- Tc phn x nh hn nhiu so vi tc bc bay chn khng.
- Hiu sut v nng lng thp, cho nn phn x khng phi l phng php tit kim
nng lng.
- Bia thng l rt kh ch to v t tin.
- Hiu sut s dng bia thp (khng s dng c ht, nhiu khi do bia gin, cho nn
d b nt dn n hng sau s ln phn x cha nhiu.
- Trong nhiu trng hp, khng cn n nhit , nh ng n lun b t nng.
- Cc tp cht nhim t thnh chung, trong chung hay t ant c th b ln vo trong
mng.
2.1.3

C ch phn x
Chng ta xem xt hnh 2.4, m hnh ny c gi l phn x do va chm. N c th

l phn x ngc hoc xui chiu. Phn x ngc l khi cc nguyn t bt khi bia bay ra
theo hng ngc vi hng ti ca ion bn ph. Trng hp ny thng gp trong thc t.
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Cc phng php ch to mng t

MNG T

Cn phn x xui chiu xy ra khi nguyn t bay ra theo hng bn ca ion, trng hp ny
ch gp khi bia l cc l kim loi rt mng. Sigmund m t c ch phn x va chm nh sau:
Khi cc ion c ng nng ln bn ln b mt ca bia (catt), trong cc lp nguyn t s
xy ra qu trnh va chm ca cc nguyn t di s bn ph ca cc ion y. Chng tip
tc va chm hn lon n khi c nng lng bng hoc ln hn nng lng lin kt mng
tinh th th thot ra khi b mt ca bia. C ch trn c th coi l mt nh ngha tng qut
cho qu tr nh phn x i vi tt c cc vt rn ti nng lng ion thch hp. Tuy nhi n,
c trng ca qu trnh va chm xy ra trong vt rn ph thuc v o ln ca nng lng
ion. C th chia nng lng ion ra ba mc: thp, trung b nh v cao.

Hnh 2.4 Hin tng bn ph bia trong phng in phn x: Ion c gia tc trong
lp v catt, va chm vi nguy n t trong bia v lm bt nguyn t khi bia.Trong
l gc bn ph (gc ti), - gc pht x ca nguyn t.

Trn hnh hnh 2.5 l s m t qu trnh phn x theo ba c ch tng ng vi ba

mc nng lng ca ion. Nng lng thp: Mc nng lng ny xp x hoc ln hn nng
lng ngng phn x ca mt cht. C ch phn x trong trng hp ny c gi l c
ch bc mt nguyn t. Hiu sut bn ph (xem nh ngha phn sau) t l thun vi mt
nng lng ca nguyn t trn b mt. S va chm trong c ch ny thng l ch trong
lp nguyn t trn cng, do to ra chuyn ng mt cch hi ha ca tng nguyn t v
thot ra khi bia vi tc trung bnh (hnh 2.5a). Nng lng trung bnh: Nng lng ion
bn ph ln hn nng lng lin kt ca cc nguyn t, cho nn cc nguyn t cng
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Cc phng php ch to mng t

MNG T

mt lp c th dao ng mnh v
thot ra ngoi bia. Va chm ca cc
nguyn t bn trong bia vn cha xy ra
mt nhiu. l c ch bc lp
nguyn t (hnh 2.5b). Nng lng
cao: Khi nim nng lng cao mang
tnh tng i v thng c ngha khi
phn x loi vt liu c lin kt yu.
Trong trng hp ny, hiu sut bn
ph c th cao hn 1, thm ch bng
hoc ln hn 10. l c ch bc
cm hay l phn x nhit, bi v tc
phn x t gi tr cao nh tc bc
bay nhit (hnh 2.5c). S phn chia cc
c ch phn x ny cng ch mang tnh
tng i, bi v chng ta khng kim
sot c mt cch chnh xc cc i
lng lin quan trong qu trnh phng
in. Tuy nhin, i vi tng loi vt
liu khc nhau, c th la chn nng l

Hnh 2.5 S m t cc c ch phn x.

ng ion thch hp c c qu trnh

phn x nh mong mun.
2.1.4

Hiu sut phn x

Trong phng php ch to mng mng bng phn x, c hai i lng c trng c

bn l hiu sut bn ph ion v xc sut lng ng. V c bn, c hai i lng ny c

nhng c trng ring cho phng php phn x, tuy nhin, chng cn ph thuc nhiu vo
cu hnh ca tng thit b phn x. Di y chng ta xem xt mt s kt qu thc nghim
tiu biu, m cc tc gi cng b khi h tin hnh kho st trn h thit b ca mnh.
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Cc phng php ch to mng t

MNG T

Hiu sut bn ph ion

Hiu sut bn ph c nh ngha l t

s ca s nguyn t c thot ra khi bia

trn mt ion bn ph ln bia . N ph thuc
vo lin kt ha hc v nng lng c
truyn i nh va chm trong bia. Hiu sut
bn ph ca cc vt liu khc nhau v c
bn ph bi cc ion c khi lng v nng
lng khc nhau c xc nh bng thc
nghim v tnh ton t cc nguyn l s dng
k thut Monte Carlo. Trn bng 2-1 cho thy
hiu sut bn ph ca mt s ion kh tr c
cng nng lng (500 eV) i vi cc bia kim
loi. Cn trn hnh 2.6 l th v s ph
thuc vo nng lng ion ca hiu sut bn
ph i vi mt s nguyn t. C th nhn
thy rng, mc d nng lng bn ph ca cc
ion cao n vi trm eV, nhng hiu sut bn

Hnh 2.6 Hiu sut bn ph ion i vi mt s

bia n cht ph thuc vo nng lng ca ion
trong phn x magnetron.

ph cng vn nh. iu ny cho thy nh bt mt nguyn t ra khi bia i hi nng

lng tng i ln. Do , v nng lng m ni, th phn x l phng php km hiu
qu hn nhiu so vi bc bay chn khng, hn na tc bc bay bng phn x cng thp
hn tc bc bay nhit.
Nng lng ngng phn x l nng lng thp nht ca ion bn ph m c th gy ra phn
x. Nhn chung, i vi trng hp phn x bia kim loi th nng lng ngng khng thp
hn 25 eV. l nng lng cn thit nguyn t dao ng mnh n mc c th thot ra
khi mng tinh th ca cht rn.
Hiu sut bn ph cn ph thuc vo gc bn ph ca ion trn b mt bia. Khi gc bn
ph bng 90o (chm tia ion vung gc vi b mt bia) hiu sut bn ph t gi tr cao nht.
Trang 14

Cc phng php ch to mng t

MNG T

Trong phn x nghing (i vi ion argon) th tia ti c gc 70o cho hiu sut bn ph t
gi tr ti u.

Bng 2-1 Hiu sut bn ph magnetron cao p mt chiu bng ion nng lng 500 eV i vi bia
kim loi

Xc sut lng ng
Xc sut lng ng c nh ngha l t s cc nguyn t m thc t lng ng ln

trn s nguyn t thot (pht x) ra khi bia. Mt cch gn ng, c th coi s nguyn t
pht x bng tch ca ba i lng l dng phng in, hiu sut bn ph v thi gian lng
ng.
Xc sut lng ng nhn c trn h phn x magnetron phng vi bia c bn knh
gn 20 cm c lit k trn bng 2-2. Xc sut lng ng ca mi h cng khc nhau bi v
chng c cu hnh khc nhau (v kch thc bia, che chn ngun phn x, kch thc
chung chn khng,). T bng ny c th nhn thy rng, xc sut lng ng cao nht khi
p sut thp, khong cch t bia n nh, nguyn t kh s dng nh hn nguyn t cn
phn x. Th d, mc d hiu sut bn ph ca ion nng nh K+ c cao hn cc ion khc,
nhng xc sut lng ng li gim ng k. iu ny cho thy, phn x ti u cn c xem
xt cho tng trng hp c th.

Trang 15

MNG T

Cc phng php ch to mng t

Khong cch bia- (cm)

Ar, phn x bia Cu
5 cm
9.5 cm
14.5 cm
Ne, phn x bia Al
5 cm
9.5 cm
Ar, phn x bia Al
5 cm
9.5 cm
Kr, phn x bia Al
5 cm
9.5 cm

p sut (mTorr)

Xc sut lng ng

5, 20, 30
5, 20, 30
5, 20, 30

0.63, 0.49, 0.54

0.48, 0.47, 0.45
0.39, 0.35, 0.31

5, 20, 30
5, 20, 30

0.80, 0.56, 0.52

0.40, 0.42, 0.40

5, 20, 30
5, 20, 30

0.60, 0.46, 0.42

0.44, 0.45, 0.35

5, 20, 30
5, 20, 30

0.52, 0.45, 0.38

0.35, 0.27, 0.22

Bng 2-2 Hiu sut bn ph magnetron cao p mt chiu bng ion nng lng 500 eV i vi bia
kim loi

2.1.5
a

Cc yu t nh hng ln tc lng ng mng

Dng v th
Trong hu ht cc trng hp phn x th vic tng cng sut phn x cng khng nh

hng nhiu n tc lng ng. Mt khc nh chng ta thy s ion bn ln catt t l

thun vi mt dng. Cho nn, yu t nh hng ln ln tc lng ng chnh l dng,
hn l in th t trn catt. Trn hnh 2.7 l s liu thc nghim nhn c v s ph
thuc chiu dy mng mng vo in th catt vi thi gian phn x l 1 gi, bia s dng l
tantan ng knh 76 mm. Chng ta thy sau gi tr 1500 V, in th c tip tc tng hn
na th tc lng ng cng ch tng khng ng k (chiu dy ca mng nhn c
khng tng). Nh vy trong trng hp cng sut ca thit b hn ch th chng ta nn tng
dng phn x v gim in th trn catt. Vic tng dng phn x c th thc hin c
bng cch gim p sut, tng pht x in t, dng t trng (magnetron), hay tng din tch
bia, gim kch thc bia-,
Trang 16

Cc phng php ch to mng t

MNG T

Hnh 2.7 Tc lng ng ph thuc vo dng nhiu hn l vo in th trn bia trong phn x
magnetron.

p sut
Chng ta cng bit, trong k thut phng in phn x th khi tng p sut, mt

ion tc l mt dng s tng ln. Khi cng sut phn x c gi khng i th tc lng
ng cng tng theo mt d ng, c ngha l tng theo p sut phn x.
Trong khong p sut khng ln lm, tc lng ng tng tuyn tnh theo p sut.
iu ny cng chng t s lng ion / nguyn t c thot ra khi bia m c th quay tr
li catt do hiu n g khuch tn ngc cng c gim. Tuy nhin, hiu ng khuch tn
ngc ch quan st thy khi p sut vt mt gi tr ngng nht nh. Thc nghim cho
thy, dng catt v tc lng ng mng khng cn tng theo p sut khi chn khng gim
xung, p su t vt gi tr 1,3 x 10-1 Torr. Tc lng ng ti u trong trng hp phn
x bng kh argon nhn c khi p sut phn x bng 2,5 : 6 x 10-2 Torr.
c

Nhit
Khc vi p sut, nhit l yu t phc tp, trong mt s trng hp, tc lng

ng ph thuc rt mnh v o nhit . Th d, khi hp phn x SiO2, AsGa, Ge ti nhit

thp, tc lng ng nh. Cn a s cc trng hp khc th tc lng ng tng
Trang 17

Cc phng php ch to mng t

MNG T

ng k khi nhit gim t cao xung thp. Trn hnh 2.8 l th ph thuc vo nhit
ca tc lng ng i vi mt s gi tr phn p trn .

Hnh 2.8 Vai tr ca nhit i vi tc lng ng th hin khng r rt trong phn x.

2.1.6
a

Cc loi bia phn x

Bia kim loi
C th ni trong cc loi vt liu phn x th vt liu kim loi n cht l d gia

cng bia hn c. Th d, bia vng, ng, tantan, platin, v.v... c th ch to bng cch
khun ng kch th c ca catt. Do kim loi dn in v dn nhit rt tt cho nn dng
magnetron cao p mt chiu phn x cc loi bia kim loi ny s cho hiu sut phn x
cao. Th d, trong phng php hin vi in t (SEM v TEM) ngi ta thng ph lp
vng hay platin rt mng ln b mt mu cch in ( dn in t xung catt). Lp vng
ny c lng ng trong bung phn x m chn khng c ht bng h bm ca thit b
knh hin vi. Cc bia vng hay platin s dng c rt lu, bi v mi ln phn x chng ch
b ty i mt lp dy vi chc nanmt. Mng mng kim loi vng cn c ph ln thy
tinh lm gng bn phn x s dng trong cc thit b quang hc v laze. Mng platin
hay palai phn tn bng phn x to ra lp hot ha trn b mt cc vt liu silic xp hay

Trang 18

Cc phng php ch to mng t

MNG T

SnO2 cu trc nan tinh th. Nh m nhy ca cc sens kh ch to t vt liu k trn

tng ln ng k.
b

Bia hp kim
Cc vt liu hp kim nh CoCrTa, CoNiCrTa, CoCrPt, CoFeTb v CoCrNiPt ( y

khng a cc ch s thnh phn vo trong cng thc) cng c phn x. Do mng mng
ca cc hp kim i hi kht khe v thnh phn, hn na, chng c t tnh lm nh hng
n hiu sut magnetron, cho nn vic gia cng b mt bia cn phi p ng: (i) ng
nht cao v thnh phn, (ii) hp thc trong cu to ca bia cn c tnh n kh nng
ha hi khc nhau ca cc thnh phn sao cho khi phn x c th nhn c mng ng hp
thc mong mun.
c

Bia hp cht cha xy

Cc loi mng c cu trc nhiu thnh phn nh mng st t BaTiO3, LiNbO3, SrTiO3

hay mng siu dn nhit cao YBa2Cu3O7 cng c ch to bng phn x magnetron.
Vic gia cng bia cho cc vt liu tr n quyt nh s thnh cng ca cng ngh. C th ch
to bia gm cc thnh phn cu to k trn, nhng hm lng ca tng nguyn t th cn
iu chnh sao cho hp thc trong mng ph hp vi cu trc ca tng cht. Cch th hai l
ch to hai hoc ba bia l cc oxit, s dng phng php ng phn x t hai hoc ba bia
nhn mng c hp thc v cu trc mong mun.
Cui cng, c th nhn thy rng, phng php phn x magnetron cn c ng dng
ch to nhiu chng loi vt liu khc m phng php bc bay khng thc hin c.
Cc vt liu mng mng oxit hay nitrua c ch to d dng bng cch phn x kim loi
tng ng trong kh argon trn xy hoc nit - gi l phn x phn ng. Thit b phn x
hin i c t ng ha cao, cho nn qu trnh lng ng mng mng c th khng ch
chnh xc hn. Hu ht cc thit b u c t hai n ba ngun phn x (hai n ba bia), nh
c th thc hin phn x ng thi nhiu loi vt liu khc nhau, to ra cc mng mng
hp cht, vt liu pha tp, vt liu cu trc nan phc tp khc, ... Vit Nam hin nay

Trang 19

Cc phng php ch to mng t

MNG T

cng c nhiu c s nghin cu v o to c trang b cc thit b phn x hin i c

cc chc nng k trn.

2.2
2.2.1

Bc bay bng laze xung

Nguyn l hot ng v qu trnh vt l
Bc bay bng laze xung (gi tt l bc bay laze) l mt phng php bc bay gin

on. Khi c chm tia laze cng sut ln bn ln bia (vt liu cn bc bay) th pha hi ca
vt liu c hnh thnh bc bay mt vng mng ca b mt bia. Vng ha hi ca bia ch
su khong vi trm n 1000 Ao. Khi y trn b mt hnh thnh mt m sng hnh khi
ellip ca pha hi. Tc c trng ca cc phn t bc bay (bao gm c ion v phn t
trung ha in tch) t gi tr vo khong 3 x 105 cm/s , tng ng vi ng nng 3 eV. Tc
ny ph thuc vo khi lng ca phn t ha hi. Tc lng ng mng t gi tr vo
khong 8 nm/s.
Trn hnh 4.1a v 4.1b, minh ha nguyn l ca phng php bc bay laze. Hnh nh
m sng c nu trn hnh 6.8c. Mt trong cc laze c s dng bc bay ph bin
nht hin nay l laze excimer KrF, hot ng ti bc sng 248 nm. Di y l cc thng
s chnh ca laze ny:
- di xung: 25 ns ( t).
-Mt cng sut: j 2,4 x 108W/cm2.
-Vng din tch chiu ri ln bia ( A) 0,1 cm2.
-Tn s lp li (f): 50 Hz.
Nh vy, mt nng lng ca laze (j. t) vo khong 6J/cm2. Nng lng trn mt
xung l 0,6 J. Cng sut lin tc t gi tr 2,4 x 107 W v cng sut trung bnh l 30 W.
C th m t bc tranh vt l ca qu t rnh bc bay laze nh sau. Khi bn mt xung
laze ln b mt bia (vt liu cn bc bay), mt phn nng l ng ca n b phn x ngc
li, mt phn c bia hp th. Trong khong thi gian ca di xung, nhit c truyn
t b mt vo su trong bia, su c quyt nh bi chiu di khuch tn nhit Lt . Ngoi
tr cc bia hp
Trang 20

Cc phng php ch to mng t

MNG T

th yu, chiu di hp th nh sng tia laze l mt i lng c trng, thng nh hn

di khuch tn. V vy, th tch c cp nhit trn b mt bia, khi m nng lng ca tia
laze bn vo bia c hiu sut cao nht, c hnh dng ca mt hnh khi ellip. Din tch thit
din ca n bng din tch hnh chiu ( A ) ca chm tia laze v b dy ca n l Lt (hnh
4.1). Bn trong th tch , nhit cao hn nhit nng chy ca cht bc bay, cho nn
vng ny b ha lng.

Hnh 2.9 Nguyn l bc bay bng laze xung (bc bay laze) a) S h bc bay; b) Dng xung laze;
c) Hnh thnh m sng ellip v xuyn su vo bia ca chm tia laze.

Nu nh nng lng vn c duy tr th hin tng bc s xy ra, v mt phn cc

nguyn t bn trong th tch nhn c nhit lng bc bay. Do xut hin gradient p
sut rt ln, lp Knudsen c m rng ra thnh mt h nng, hng theo phng vung
gc vi mt bia. Nhit ban u ca lp Knudsen l im nng chy ca bia; pha hi

Trang 21

MNG T

Cc phng php ch to mng t

ngui dn trong qu trnh gin n on nhit, trong khi cng ti thi im xy ra s tch
t dng chy ln dn theo hng vung gc vi b mt.
Xung laze c th gy ra hiu ng quang-pht x in t t b mt bia, ng thi cng
gy ra hiu ng quang-ion ha trong khi ellip gin n trc khi xung laze kt thc, hnh
thnh trng thi plasma. Khi mt ca m
pha hi gim nhiu th s gin n on nhit
cng dng ti tc dng hi thot ra. Cc
phn t khi tip tc lng ng trn theo
c ch dng phn t t do. Trong k thut
laze, s bn ph hay bc (ablation) bia i hi
mt nng lng ca chm tia laze phi t
c gi tr ngng nht nh. Gi tr ngng
ny l mt hm ph thuc mt nng lng
ton phn. Khi chm tia c nng lng vt
ngng th lng vt cht bc bay sau ph
thuc gn nh tuyn tnh vo nng lng laze
v t n gi tr bo ho, khng tng thm
na, mc d nng lng ca laze vn tng.
l trng thi bo ha ca qu trnh bc bay.
Hnh 4.2 l th m t hin tng ny nhn
c t thc nghim ch to mng mng siu
dn nhit cao. Cho n nay, c hai loi vt
liu c ch to bng phng php bc bay
laze nhiu nht l mng mng siu dn nhit

Hnh 2.10 Hm ph thuc nng lng laze

ca mt s vt liu bc bay t bia: trn
cng loi bia (thch anh) b mt bng hp
th nng lng laze km hn.

cao YBCO v mng hu c hydroxyapatite canxi, m phng cu trc sinh hc .

2.2.2

Ch to mng mng ng hp thc

Phng php bc bay laze c u im vt tri so vi cc phng php khc l vt liu

lm bia rt a dng v cu trc ca bia th li rt n gin: vt liu bia c th l n cht

Trang 22

Cc phng php ch to mng t

MNG T

hoc hp cht, mt hoc nhiu th nh phn; bia c th l vt liu bt, vt liu a hoc n
tinh th, vin p sau khi tng hp thiu kt, thm ch bia c th l cht lng. Nng sut
bc bay (s nguy n t lng ng trn mt photon) l i lng rt nhy vi hnh thi hc b
mt bia, ci m lun thay i theo thi gian s dng. B mt bia m th, xp th hn ch
phn x tia laze, do hp th nng l ng laze tt hn b mt nhn (nh n tinh th chng
hn). Nhiu cng tr nh nghin cu chng t vt liu lm bia tt nht cho phng php
bc bay laze l vt liu cch nhit tt, vi khuch tn nhit thp hn 10-3 cm2/s v vt liu
c kh nng hp th nh sng mnh vi h s hp th trn 105 cm-1. S dng chm tia laze
c mt dng cng thp th chng t phng php cng u vit. Mt trong nhng li th
ni bt ca phng php bc bay laze th hin ch, n t ra c hiu qu nht khi chng ta
cn ti hnh thnh trn mng mng cc cu trc v thnh phn hp thc ca vt liu gc. Bi
v, vi k thut laze xung cng sut ln th qu trnh bc bay xy ra rt nhanh, nhanh n
mc s phn hy thnh phn ha hc ca vt liu khng c thi gian xy ra. Tuy nhin,
trong mt s trng hp, khi m cc hp cht cha phn t xy hay cc kh nh khc th hp
thc ha hc ca cu trc mng cng cn c ci thin. Khi , chng ta s thc hin bc
bay laze trong iu kin duy tr p sut ring phn ca kh phn ng (th d xy, nit, ).
Phng php bc bay phn ng dng laze xung cng c ng dng thnh cng ch
to mng mng siu cng, cht lng cao nh TiN v BN.
Do kh nng truyn xa v kch thc ca chm tia laze rt b cho nn phng php bc
bay laze cn c th p dng m cc chi tit c kh tinh vi, th d cc thnh bn trong
ng hay hp rt nh, hoc b mt ca cc cu trc phc tp m bng cc phng php khc
khng th no thc hin c. Gn y xut hin mt s laze cng sut ln nh laze YAG
v ArF vi cc thng s tng ng l (20 nm, 5Hz, 1J/xung) v (20 nm, 50Hz, 300 nJ/xung)
Vi mt nng lng cao n ( 5 x 1010W / cm ) ngi ta ch to c vt liu cc-bon
gi kim cng sch, khng cn tp cht hyr. V tia laze truyn qua mt s vt liu trong
sut m khng gim nng lng, cho nn s dng k thut laze xung cn c th lm ha hi
vt liu lp ph trn trong sut. l k thut bc bay ngc. Tia laze c chiu qua
mt mt ca , nng lng c tp trung trn lp ph ca mt kia v lm bc ay lp ph
ny, ri li lng ng ln trn khc t i din vi lp ph.
Trang 23

Cc phng php ch to mng t

2.3
2.3.1

MNG T

Epitaxy chm phn t (MBE)

M t thit b
BE (vit tt t ting Anh: Molecular Beam Epitaxy) dng ch phng php mc

mng bng chm phn t. MBE cho n nay cng tr thnh khi nim rt quen thuc
khng nhng trong ng nh vt l m c trong cc lnh vc cng ngh khc. Thc cht MBE
cng l phng php lng ng pha hi vt l bi v to cc phn t trng thi h i
chng ta cng dng phng php vt l Sau ny ngi ta pht trin phng php MBE
thnh AL-MBE (MBE lp nguyn t) ch to vt liu cu trc si u mng, vt liu quang
t cu trc nan.
S h thc nghim MBE c v trn hnh 2.11. H ny bao gm hai chung v h
van ng m. Mt chung mc mng (gi l chung mc mng) v mt chung ph (cc
th h u khng c chung ph). C hai chung u c gn vi h bm chn khng. Nh
cc van chu trnh, c th a vo hoc ly ra cc mu m hu nh khng lm nh hng n
chn khng trong chung mc mng.

Hnh 2.11 S h thc nghim MBE.

Trang 24

Cc phng php ch to mng t

MNG T

Hnh 2.12 S chung mc ca h MBE.

Chung ph c cha cc cng c phn tch b mt, m chng khng c trong

chung mc, thit b lng ng b tr hay cc thit b cng ngh khc. S chung mc
mng c v tch ring trn hnh 2.12. Cc b phn chnh ca n bao gm ngun cp chm
phn t, b t , b quay v dch chuyn mu, b che chn chm tia, u o p sut v
mt ca chm tia, sng nhiu x in t phn x (RHEED) v mn hnh theo di, my
phn tch khi lng cc ht (phn t, nguyn t, ion, ) v thnh phn ha hc ca chm
tia. Chung ph c th coi l t hp ca cc phng php phn tch nh ph k in t
Auger, khi ph k ion th cp (SIMS), ph k in t phn tch ha hc (ESCA), ph k
in t - quang tia X (XPS). Ngoi ra, cn c cc b phn mu v sng ion x l. b mt
lin quan, thit b cn c cc ngun lng ng hoc n mn bng chm tia ion. Nh c b
che chn v khng ch chnh xc nhit ngun, lin quan n vic phi nh lng dng
hi nguyn t hoc phn t hng ln l n tinh th (c nhit t nng mt cch
thch hp), qu tr nh mc mng bng MBE c th thc hin theo ng nguyn l tri tng
lp nguyn t. Kh lm vic trong h thc nghim MBE phi c tinh khit rt cao, chn
khng cng cn t mc siu cao, n 10-11 Torr. Trong chn khng ny qung ng t do
Trang 25

Cc phng php ch to mng t

MNG T

ca phn t trong chung cng nh trong bn thn chm tia phn t c gi tr rt ln, gp
vi bc ly tha khong cch t ngun ti (th d khong cch ngun- l 20 cm, qung
ng t do c gi tr ln trong khong t 200 m n 20 km).
2.3.2

Ch to mng mng tinh th cht lng cao

c th so snh cc phng php hin i dng ch to mng mng tinh th GaAs

cht lng cao, chng ta xem xt cc thng s k thut ca chng trong bng 2-3. Trong
phng php MBE, tc mc mng c th khng ch rt chnh xc, v th t gi tr nh
n 0,6 m/gi (nh hn 2Ao/s). Vic khng ch qu trnh mc c thc hin chnh xc
n tng lp nguy n t. V th, bng phng php MBE c th ch to mng mng n
tinh th, trong khi cc phng php khc ch c th ch to mng vi s kim sot b dy
chnh xc, cn cu trc ca vt liu th thng l v nh hnh hoc a tinh th vi nhiu
bin ht.

Bng 2-3 So snh thng s cng ngh trong cc phng php epitaxy.

Hu ht cc vt liu siu mng t cc nguyn t nhm III v V (v d Al, Ga, In, As , P

v Sb), hay vi Si, Ge, cc hp cht nhm II-VI, nhm ph IV-VI v nhiu kim loi khc
Trang 26

Cc phng php ch to mng t

MNG T

c thc hin bng phng php MBE. Cng bng phng php MBE, ngi ta ch to
thnh cng cc linh kin tinh vi dng trong k thut vi sng, thng tin quang in t, linh
kin t ng t v s hot ng vi tc cao, cc vi mch mt ln, C th thy trn
bng 2-4 s lng cc hp cht cu trc tinh th c ch to bng phng php MBE l
rt ln. N bao gm hu ht cc cu trc t kim loi, bn dn, cht cch in n hp cht
hai, ba thnh phn, s dng cc loi khc nhau.
Hu ht cc vt liu si u mng t cc nguyn t nhm III v V (v d Al, Ga, In, As , P
v Sb), hay vi Si, Ge, cc hp cht nhm II -VI, nhm ph IV-VI v nhiu kim loi khc
c thc hin bng phng php MBE. Cng bng phng php MBE, ngi ta ch to
thnh cng cc linh kin tinh vi dng trong k thut vi sng, thng tin quang in t, linh
kin tng t v s hot ng vi tc cao, cc vi mch mt ln, C th thy trn
bng 6.8 s lng cc hp cht cu trc tinh thm c ch to bng phng php MBE l
rt ln. N bao gm hu ht cc cu trc t kim loi, bn dn, cht cch in n hp cht
hai, ba thnh phn, s dng cc loi khc nhau.
Ngy nay, cng ngh MBE c pht trin rt nhanh p ng nhu cu ch to cc
linh kin, mch t hp IC, cc h thng iu khin, m trong vt liu u c kch thc
nh t vi n vi chc nanmt. Cng ngh nh vy gi l MINATECH (cng ngh micronan).

Trang 27

MNG T

Cc phng php ch to mng t

Bng 2-4 Cc loi mng mng tinh th ch to bng phng php MBE

III-V (Mng : )
AlGaAs: GaAs
AlGaAs: GaAs, Si
AlGaSb: GaAs
AlSb: GaSb
GaAs: GaAs, Ge, Si
GaAsSb:GaAs,InP, InAs, GaSb
GaP: Si, GaP
GaSb: GaAs, GaSb
InAlAs: InP
InAlP: InGaP
InAs: GaAs, GaSb
InAsSb: GaSb, InSb, GaAs
InGaAlAs: InP
InGaAlP: GaAs
InGaAsP: InP
InGaAsSb: GaSb, GaAs
InGaP: InAlP
InP: InP
InSb: GaAs
IV (Mng : )
Si: Si
Ge: Si
GeSi: Si
IIVI (Mng : )
CdMnTe: CdTe, GaAs
CdS: InP
CdTe: GaAs, InP, InSb
CdZnS: GaAs
CdZnTe: GaAs
HgMnTe: GaAs

HgTe: CdTe
HgZnTe: GaAs
ZnMnSe: ZnSe, GaAs
ZnS: GaP
ZnSe: GaAs, InP, Si
ZnSeTe: GaAs
ZnTe: InP
Cch in (Mng: )
BN: Si
BaF2: InP, CdTe
CaF2: Si, GaAs, InP
CaSrF2: GaAs
LaF3: Si
SrBaF2: InAs,InP
SrF2: GaAs
Metals (Mng : )
Al: GaAs, InP
IV-VI (Mng : )
PbEuSeTe: PbTe
PbSnSe: BaF2, PbSe, CaF2
PbS: BaF2, PbSe
PbSe: BaF2, PbSe
PbTe: BaF2
PbYbSnTe: BaF2, PbTe
Ag: InP
Au: GaAs
CoSi2: Si
Fe: GaAs
Mo: GaAs
NiSi2: Si
Sn: GaAs

Trang 28

Cc phng php o tnh cht ca mng t

MNG T

CC PHNG PHP
O TNH CHT CA MNG T
3.1

T k mu rung
T k mu rung, (vibrating sample magnetometer, vit tt l VSM) l mt dng c o

cc tnh cht t ca vt liu t, hot ng trn nguyn tc thu tn hiu cm ng in t khi

rung mu o trong t trng.
3.1.1

Lch s
T k mu rung ln u tin c pht minh vo gia nhng nm 50 ca th k 20, bi

tin s Simon Foner, mt nh nghin cu ca Vin Cng ngh Massachusetts (MIT), M.

Simon Foner nhn gii thng Joseph F. Keithley cho pht minh ny vo nm 1999 v
VSM l mt trong nhng thit b ph thng nht trong nghin cu vt liu t.
3.1.2
a

S lc
S khi ca t k mu rung
Nh ni, t k mu rung hot ng theo nguyn tc cm ng in t. N o mmen

t ca mu cn o trong t trng ngoi.

Mu o c gn vo mt thanh rung khng c t tnh, v c t vo mt vng t
trng u to bi 2 cc ca nam chm in. Mu l vt liu t nn trong t trng th n
c t ha v to ra t trng. Khi ta rung mu vi mt tn s nht nh, t thng do mu
to ra xuyn qua cun dy thu tn hiu s bin thin v sinh ra sut in ng cm ng V.
Hiu in th sinh ra do hin tng cm ng c cho bi biu thc:

V = na

dB
dt

T trng xuyn qua cun dy trc khi c mu t vo l:

B = 0 H
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Cc phng php o tnh cht ca mng t

MNG T

T trng xuyn qua cun dy sau khi c mu t vo l:

B = 0 ( H + M )
Vy:

B = 0 M
Suy ra:

Vdt = na0 M
Trong :
a: tit din ca vng dy thu tn hiu.
n: S vng dy thu tn hiu.
M: t ha ca mu
vi M l mmen t ca mu o, Sm l tit din vng dy, n l s vng dy ca cun dy thu
tn hiu.

Hnh 3.1 S khi ca t k mu rung

Trang 30

Cc phng php o tnh cht ca mng t

MNG T

Cun dy thu tn hiu

Trong cc t k ph thng, ngi ta s dng 2 cun dy thu tn hiu i xng nhau, gi

l cp cun dy pick-up (pick-up coil), l h 2 cun dy i xng nhau, cun ngc chiu
trn li l mt vt liu t mm.
Ngoi ra, tng nhy cho t k, ngi ta c th thay cun dy thu tn hiu bng
thit b giao thoa k lng t siu dn (superconducting quantum interference device SQUID), l mt tip xc chui hm Josephson c th o cc lng t t thng, do nhy
ca thit b c tng ln rt nhiu. Vi cun dy thu ny, ta c t k SQUID, thng hot
ng nhit thp (v hin nay ch c cc vt liu siu dn t trng thi siu dn nhit
thp.

Hnh 3.2 S cun dy thu tn hiu

Nam chm in
Trong t k cng l mt b phn rt quan trng to ra t trng t ha vt liu cn

o. Nu nam chm in l cun dy to t trng bng dng in mt chiu n nh, th t

trng to ra l mt chiu n nh, nhng thng khng ln, do b hn ch bi t bo ha
ca li thp v cun dy mt chiu khng th cho dng in ln chy qua (s ta rt nhiu
nhit). Loi nam chm kiu ny ch s dng t trng cc i c xung quanh 3 T.

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Cc phng php o tnh cht ca mng t

MNG T

Ngi ta c th to ra t trng ln bng cch s dng t trng xung. Tc l dng

mt dng in cc ln dng xung phng qua cun dy, to ra t trng ln (c th ti
hng chc Tesla) trong mt thi gian cc ngn. Tuy vy, hn ch ca cch ny l v thi
gian ca t trng ngn, nn phi c cch ghi tn hiu khc (v t trng qu ngn c th
nh hng n kh nng cm ng ca vt liu trong t trng ngoi).
Cun dy siu dn cng l mt cch to t trng mt chiu ln v n nh. Ngi ta
s dng nhng cun dy siu dn (hot ng nhit thp) to ra t trng cc ln n
nh. Hn ch ca cch ny l cun dy phi hot ng nhit thp nn chi ph hot ng
thng cao. Cun dy siu dn thng s dng trong t k SQUID
d

B phn t mu
B phn t mu phi c lm t cht cch in, khng b nhim t khng lm nh

hng n php o tnh cht t ca mu.

Di y l hnh nh ca b phn mu c thit k vi nhng hnh dng khc nhau
c th t cc mu khc nhau.

Hnh 3.3 b phn mu c thit k vi nhng hnh dng khc nhau c th t cc mu

khc nhau
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Cc phng php o tnh cht ca mng t

MNG T

Cc php o c s dng t k mu rung

3.1.3

Nh ni, t k mu rung o mmen t ca vt t. n v ca mmen t thng s

dng trong t k mu rung l emu (electromagnetic unit), 1emu = 103. A.m 2 , v ty theo
vic o mmen t theo i lng no s c tng ng php o :
Php o t ha, t tr: o s bin i ca mmen t theo t trng ngoi
Php o mmen t theo s thay i ca nhit di tc dng ca mt t trng
ngoi: php o t nhit. Da vo php o t nhit, c th thc hin cc php o ng hc t
tnh, hay ng hc kt tinh ca vt liu t.
o thay i mmen t theo thi gian: o phc hi
Xc nh cc tnh cht d hng da vo vic quay vt liu (b phn quay ca VSM)
...
v nhiu php o khc ty thuc vo mnh yu ca mi thit b

Hnh 3.4 nh chp t k mu rung DMS 880 Trung tm Khoa hc Vt liu, i hc Quc gia H Ni

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Cc phng php o tnh cht ca mng t

MNG T

Hnh 3.5

Hnh 3.6

3.2

Knh hin vi lc t
Knh hin vi lc t (Magnetic Force Microscope, thng

vit tt l MFM) l mt loi knh hin vi thuc nhm knh hin vi

qut u d (SPM), c s dng xy dng hnh nh s phn
b ca tnh cht t trn b mt vt rn da trn vic ghi nhn
lc tng tc (lc t) gia mi d t tnh vi b mt ca mu.
3.2.1

Nguyn l hot ng
V mt nguyn l, MFM hot ng tng t nh AFM.
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Cc phng php o tnh cht ca mng t

MNG T

Mi d qut trn b mt mu c s dng l vt liu t tnh khi qut trn b mt mu s c

s tng tc vi cc thnh phn t tnh trn b mt, qua v bn phn b cc thnh
phn t tnh b mt, m c th y l cu trc men ca vt rn.
Lc tng tc t gia mi d v b mt vt rn c xc nh bi:

hoc trong ch hot ng tip xc, ngi ta c th ghi li gradient lc t c xc nh

bi:

vi Mztip, Hzsample ln lt l thnh phn theo trc z ca t ha ca mi d, v cng t

trng ti b mt mu vt.

Hnh 3.7 nh chp phn b men t ca b mt cng, s tng phn y l tng phn v tnh
cht t

3.2.2
a

u im v hn ch
u im ca MFM:
+ MFM l thit b dng phn tch cu trc t ca vt rn c nhiu u im. u im

u tin l c kh nng phn tch cu trc t m khng i hi s ph hy hay x l mu

Trang 35

Cc phng php o tnh cht ca mng t

MNG T

nh knh hin vi Lorentz, ng thi phn gii khng b gii hn bi hin tng nhiu x,
m ch ph thuc vo kch thc v bc qut ca mi d trn b mt mu vt.
+ Mu khng nht thit phi l cht dn in.
+ C kh nng phn tch cu trc t m khng i hi s ph hy hay x l mu
+ Khng i hi phi k thut x l mu hay bao ph g c bit.
+ MFM c th dng nh my STM hay AFM

im yu ca MFM:
+ MFM ghi nh da vo hin tng qut nn phn gii thi gian thp, kh nng ghi

nh chm. ng thi, vic ghi nh tc thi trong qu trnh t ha ca MFM km hn rt

nhiu so vi knh hin vi Lorentz. Vic ghi li cu trc t ca cc vt liu t mm kh hn
do trng phn tn trn mi nh hng n men t ca mu vt.
+ Nu t trng ca mi d qu mnh n c th lm thay i men t trn b mt
mu.
+ MFM ghi nh da vo hin tng qut nn kh nng ghi nh chm. ng thi, vic
ghi nh tc thi trong qu trnh t ha ca MFM km .

Trang 36

ng dng ca mng t

MNG T

NG DNG CA MNG T

Mng mng v cu trc a tng thu ht c rt nhiu s quan tm do kh nng v cc tnh

cht t c o v ng mong c. Hin nay, mng t c ng dng trong rt nhiu lnh vc
nh trong nanochip, trong MEMS, trong HDD. Trong phn bo co ny, xin trnh by v ng dng
mng mng t trong HDD.

Ngy nay a cng s dng mng mng t rt nhiu b phn: mng mng ph trn a t
(platter), trn cc u c/ghi. Cc mng mng t dng y ch yu l mng mng t nh mng

FePt v mng CoPt vi tnh t cng rt cao, bn v kh nng chng mi mn, chng xi
ha tt. Hin nay, xu th ang tp trung l nng cao mt ghi t (ph bin ang l 100
Gb/in2) nng n Tb/in2 bng cch ghi vung gc vi b mt mng v gim kch thc cc
bit t.

4.1

ng dng trong cm bin (sensors) v b dn ng (actuators)

Bng 4-1 Phn loi tnh cht ca mng mng t

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ng dng ca mng t

MNG T

Nh vo nhng tnh cht c bit, mng t c ng dng trong cc cm bin v c b

dn ng. Cc mng mng t dng trong cm bin thng l mng mng mm (soft) c
lm t cc vt liu nh NiFe81/19. Cc cm bin t trng cng c th ng dng hiu ng
GMR. Trong trng hp , yu cu cc ci chuyn mch (sandwitches) mng cha c cc
vt liu st t (NiFe81/19, Co) v vt liu phn st t (CoCrPt). dy ca mng thng l
vi chc nanometre.

Hnh 4.1 Cu to u c MR va GMR

Hnh 4.1 l cu to ca mt cm bin s dng hiu ng GMR. Hai u cm bin l hai

lp chn t, khng cho t trng bn ngoi lm nh hng n lp gia. gia l mng
a lp gm 4 lp mng mng: lp sensing (lm t NiFe), lp spacer (vt liu ng), lp
pinned (lm t Co) v lp exchange. Ba lp u rt mng, cho php cc electron dn c th
di chuyn t do t lp sensing sang lp pinned v ngc li thng qua lp spacer. Hng t
ha ca lp pinned l c nh, trong khi hng t ha ca ca lp sensing c th thay i
theo t trng ngoi.
Trang 38

ng dng ca mng t

MNG T

Nguyn l ca cm bin GMR l da trn hiu ng lng t ca electron. Mi electron

thng c spin theo mt trong hai hng: spin hng ln hoc spin hng xung. Cc
electron dn vi hng spin song song vi hng t ha ca vt liu di chuyn t do v d
dng, to ra in tr nh. Ngc li, cc electron dn vi hng t ha ngc vi hng t
ha ca vt liu s b cn tr do va chm vi cc nguyn t trong vt liu, to ra in tr
cao.

Hnh 4.2 Nguyn l ca cm bin GMR

ng dng tnh cht ny vo hot ng ca cm bin nh hnh 4.2: Khi lp pinned v

lp sensing c cng hng moment t, cc electron c spin song song vi moment t ny s
di chuyn t do trong c hai lp mng mng, v in tr thu c l nh. Khi ta i hng
t ha lp sensing, lp pinned v lp sensing c moment t ngc hng nhau, th khi
electron c spin hng ln b cn tr bi mt lp mng t, v electron c spin hng xung
s b cn tr bi lp mng t cn li, kt qu l in tr thu c rt ln.
Trong khi , cc mng mng t dng trong b dn ng gm c mng mng t cng
v mng mng t mm. Cc vt liu thng dng l SmCo83/17, CoP.

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ng dng ca mng t

MNG T

Hnh 4.3 B dn ng trong HDD

4.2

ng dng trong a t (platter)

Nh tn cho thy, phng tin mng mng bao gm mt lp rt mng ca vt liu t

tnh c p dng cho b mt ca a t (platter) trong HDD. Cc k thut sn xut c bit

c tuyn chn lng ng vt liu truyn thng trn a t. Mt phng php l m in
(electroplating),phng php ny lng ng cc vt liu trn a t bng cch s dng mt
qu trnh tng t nh c s dng trong m trang sc. Mt phng php khc l phn
x (sputtering), s dng mt qu trnh hi-lng ng lng ng mt lp cc mng cc vt
liu t tnh trn b mt. Phn x ln a t c li th l c mt b mt phng hn v ng
nht hn m. Do nhu cu gia tng v cht lng cao trn a mi hn, phn x l phng
php ch yu c s dng trn a mi, mc d chi ph cao hn ca n.
Hnh 4.4 l mt a t ph mng mng 5.25 (pha trn) cnh mt a t ph oxide
5.25 (pha di). a t ph mng mng phn x tht s mnh, chp hnh chng ging nh
chp hnh ca mt tm gng. y l l do ti sao cc cng ty lun th hin cc nh a
cng mt gc.

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ng dng ca mng t

MNG T

Hnh 4.4 a t ph mng mng 5.25

4.3

ng dng trong u c /ghi

Mng mng vt liu t tnh c th c s dng cho u c/ ghi tc cao trong

HDD. Hin nay cc u c/ ghi ch yu l loi u c/ ghi s dng hiu ng GMR, trong
cng s dng mt cm bin GMR gia.

Hnh 4.5 u hc GMR

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ng dng ca mng t

4.4
4.4.1

MNG T

Xu hng pht trin

Pht trin cc mng mng t ng dng trong PMR
S ghi m t vung gc (PMR) c s dng trong HDD t 2005. Vic s dng

HDD cho php tng mt b mt ghi nhiu ln so vi vic ghi t dc. Mt b mt ln

n 230Gb/in2 c chng minh v tnh kh thi v mt ln n hng trm Gb/in2 vi
PMR ang c th nghim.
L thuyt v PMR c gii thiu u tin nm 1976 v t k thut PMR
c nghin cu trong gn 30 nm cho n khi cui cng n cng c ng dng thng
mi trong HDD. Mt trong nhng then cht trong k thut PMR, mi trng mng mng ghi
vung gc c ci tin trong sut thi gian qua nhm gia tng mt b mt.

Hnh 4.6 Xu hng v kch c bit t trong HDD

4.4.2

Mi trng ghi vung gc

C hai loi mi trng ghi vung gc: Mt loi l mi trng vung gc n lp t,

loi ny c ph trn b mt b mt, ch yu l qua mt lp di gia tng s pht trin

ca lp t theo hng d t ha vung gc vi b mt. Loi th hai l mi trng vung gc
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ng dng ca mng t

MNG T

hai lp t,vi loi ny mt lp t mm c t di lp t ghi v n ng vai tr nh mt

phn ca u ghi trong qu trnh ghi. Do , hiu sut ghi c tng ln v loi mi trng
ny thch hp hn vi cc ng dng ghi t mt cao. Trong HDD thng mi, ngi ta s
dng loi mi trng ny.
Hnh bn cho thy k thut ca loi mi trng ghi vung hai lp t. Hai lp t c tnh
cht t khc nhau. Lp ghi c tnh cht t cng trong khi lp di c tnh cht t mm. Vi
cu trc v tnh cht t ca hai lp ny cn c ti u ha cho vic ghi t mt cao v
cn kt hp li. Ni chung, mt lp trung gian s c a vo hai lp ny v n ng vai
tr iu khin trc d t ha, ng knh ht, tnh cht tinh th ca lp ghi v ng thi iu
khin tng tc t gia hai lp t. S iu khin tng tc t l rt quan trng c c
mi trng ghi vi c tnh nhiu thp.

Hnh 4.7 Mi trng ghi vung gc bng hp cht Co

Trong loi mi trng ghi t vung, lp t trn thng l mng mng t c ch to

bi cc vt liu t cng (v d hp cht ca Co), cn lp t bn di l mng mng t mm.
Khi tng mt ghi tuyn tnh, t khng vung cn phi c tng ln trong khi dy
lp ghi cn phi c lm gim xung tng cng hiu sut ghi ca u ghi. Khi dy
lp ghi gim xung nh hn 30 nm, khng t vung bt u gim. Cc nghin cu cho
thy c mt vng khng trt t rt mng (vi nm) vng tip gip gia hai lp. iu ny l
do s khng hp mng gia lp t ghi trn v lp t bn di. khc phc ngi ta s
Trang 43

ng dng ca mng t

MNG T

dng cc lp trung gian khng c tnh cht t to thnh cc vng tip gip mt hn. Khi
tnh cht t vung c ci thin, khi dy ca lp mng mng t gim th khng t
gim chm hn so vi khi cha c lp trung gian.

Hnh 4.8 nh chp ct ngang TEM ca lp tip gip CoCr/Ti

Hnh 4.9 nh chp ct ngang TEM ca lp tip gip gia lp di v lp t. Mt lp trung gian
hp cht CoCr hcp khng c tnh cht t c thm vo gia lp hp cht Ti bn di v lp mn
t hp cht CoCr hcp trn.
Trang 44

ng dng ca mng t

MNG T

Hnh 4.10 S ci tin tnh cht t vung ca lp mng mng t bng cch thm lp trung gian
khng t tnh CoCrRu

S cch ly t (magnetic isolation) v iu khin ng knh ca cc ht tinh th ca

lp ghi l cn thit cho vic ghi t mt cao nhm tng khng t v gim s nhiu ca
mi trng. s cch ly t thu c bng cch tch ring cc yu t phi t tnh bin tinh
th. S cch ly cc yu t phi t tnh Cr dc theo bin ht c nhn thy i vi cc mi
trng ghi ph trn b mt nhit 230 0C. Vic thm oxy hoc oxide vo cc lp CoPt
hoc CoCrPt cho thy l c hiu qu trong vic tng cng s cch ly ht tinh th t tnh.
Cc tnh cht t vung bao gm tnh khng t v tnh vung gc c ci thin ng k
bng cch thm vo cc oxide nh SiOx. Vic thm SiOx vo mng CoCrPt lm tng nng
lng tinh th t khng ng hng (magneto crystalline anistropy) Ku trong mng t.
Trong cc nghin cu gn y, Shen v cng s [1] s dng mng cng [Co/PdSi]n
mng t mm FeSi/O, mng trung gian PdSi =>c th to mi trng ghi t vi Ku cao vi
tnh n nh nhit thp . Hoc mt nghin cu khc ca Das v cng s s dng Ru/RuTa
lm mng trung gian gia mng t cng CoCrPt-SiO2 [2] c th lm gim dy lp mng
trung gian t lm gim s khng hp mng gia hai lp.

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ng dng ca mng t

MNG T

KT LUN

Nh vy, xu hng hin nay trong pht trin mng mng t l pht trin cc loi vt
liu t cng v vt liu t mm mi, cng nh tm cch gim kch thc ca cc mng mng
m khng lm gim i cc tnh cht t c bit ca mng nh tnh siu t, tnh tr t, t
khng nhm pht trin cc ng dng ca n trong cc lnh vc ghi d liu t, cc cm
bin, u c/ghi...
Mt vn ang c tp trung nghin cu mnh m chnh l gim bit lu tr thng
tin t ment t xung cn spin in t. Nu thnh cng, kh nng lu tr cng nh x l
thng tin ca con ngi s tin mt bc rt xa

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TI LIU THAM KHO

[1] W.K.Shen, J.M.Bai, H.Victoria, J.H.Judy, J.Wang, Composite media for perpendicular magnetic
recording, Thin Film Materials Magazine (vol 6), 2005.
[2] A.Das, M.Racine, PMR: New Alloy Designs and Layer Engineering,Thin Film Materials
Magazine (vol 9), 2006.
[3] M.Futamono, Development of thin film media for high-density perpendicular magnetic
recording,Journal of Optoelectronics and advanced materials (vol 8),2006
[4] H.H.Gatzen, Magnetic material in thin films sensors and actuator, Garbsen, 2004
[5] D.Sellmyer, R.Skomsky, Advanced Magnetic Nanostructure,Springer,USA, 2006
[6] E.Grochowski, Emerging trends in data storage on magnetic hard disk drive, 2006
[7] Nguyn Nng nh, Vt l v k thut mng mng, H cng ngh, HQG H Ni
[8] Fujun Yang HaoWang BaoyuanWang Haoshuang Gu Mingjie Zhou Quan Li Yong Jiang,
Thickness dependence of microstructure and magnetic propertiesin FePt/B4C multilayer thin films, 2008
[9] Jian-ping zhou, Hong-cai he, Yi zhang, Chao-yong deng, Zhan shi, Ce-wen nan, Electric and
magnetic properties of CoFe2O4/Pb(Zr0.52Ti0.48)O3 bilayer thin films prepared by

pulsed-laser

deposition, 2007
[10] G.H. Aydogdu, Y. Kuru, and H.-U. Habermeier, Tuning the Magnetic and Electronic
Properties of Manganite Thin Films by Epitaxial Strain, 2005
[11] Nguyn Hu Ch, Gio trnh vt l mng mng
[12] ROSTISLAV GRECHISHKIN, SERGEY CHIGIRINSKY, MIKHAIL GUSEV, ORPHEE CUGAT,
NORA M. DEMPSEY, magnetic imaging films, 2008

[13] Gerhard Jakob, Wilhelm Westerburg, Frank Martin, aniel Reisinger, and Nicole Auth,
Magnetotransport Properties of Thin Films of Magnetic Perovskites, 2001
[14] Gustav Bihlmayer, Paolo Ferriani, Stephanie Baud, Marjana Lezaic, Stefan Heinze, and Stefan
Blugel, Ultra-Thin Magnetic Films and Magnetic Nanostructures on Surfaces, 2006
[16] PRASHANT KUMAR, M GHANASHYAM KRISHNA and A K BHATTACHARYA, Effect of
microstructural evolution on magnetic properties of Ni thin films, 2009

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