KTDDT 09

K THUT IN IN T CHNG 9
307
CHNG 09
TRANSISTORCCPHNGPHPPHNCC
9.1.TNG QUAN V TRANSISTORS:
9.1.1.CU TRC CA TRANSISTORS:
Lp kim loi tip xc
Lp Oxid
BJT (Bipolar Junction Transistor) c to

nn t ba lp bn dn phn cch nhau bi hai
mi ni pn, xem hnh H9.1
Ba vng bn dn trong transistor c gi
l : vng Pht (Emitter) ; Nn (Base) v Thu
(Collector) . Cc hnh v dng biu din cu trc vt
l ca cc loi transistor : pnp v npn trnh by trong
hnh H9.2.
HNH H 9.1
Mi ni Nn Thu
(Base Collector Junction)
Mi ni Nn Pht
(Base Emitter Junction)
Transistor
npn
Transistor
pnp
HNH H 9.2
Mi ni pn gia vng nn
v vng thu c gi l mi ni nnthu (BaseCollector Junction) . Tng
t mi ni pn gia vng nn v
vng pht l mi ni nn pht (Base
Emitter Junction).
Cc u ra ca linh kin
c t trn mi vng v k hiu
bng cc k t E (Pht) ; B (Nn) v
C( Thu).
Vng Nn cha t tp cht
v rt mng so vi vng Pht c
nhiu tp cht nht v vng Thu c
s lng tp cht trung bnh.
Trong hnh H9.3, trnh by cc k hiu cho

cc loi transistor npn v pnp
9.1.2.NGUYN L HOT NG CA TRANSISTORS:
Mun transistor hot ng nh b khuch
i, hai mi ni pn phi c phn cc ng bng
cc ngun DC ngoi. Trong chng ny chng ta
dng transistor npn kho st, nguyn l hot ng ca
transistor pnp c suy ra mt cch tng t ngoi
tr cc qui lut v in t v l trng, cc tnh ca cc
ngun p phn cc v hng ca dng qua linh kin.
HNH H 9.3
Trong hnh H9.4 trnh by phng php phn cc cho cc transistor npn v pnp linh
kin tc ng nh mt b khuch i (amplifier) . Cn nh:
Mi ni Nn Pht c phn cc thun.
Mi ni Nn Thu c phn cc nghch.
gii thch hot ng ca transistor, chng ta cn kho st cc s kin xy ra bn trong
transistor npn.
i hc Bch Khoa Tp H Ch Minh Khoa in in T Phng Th Nghim My in v Thc Tp in- 2009
308
BC phn cc
nghch
BC phn cc
nghch
BE phn cc
thun
BE phn cc
thun
Transistor pnp
Transistor npn
Trong hnh H9.4 trnh by

cc mch phn cc cho
transistor npn v pnp.
Mi ni BC phn cc nghch
v mi ni BE phn cc
thun.
HNH H 9.4: Cc mch phn cc transistor
Khi phn cc thun mi ni pn Nn Pht , vng ngho ti mi ni thu hp.

Khi phn cc nghch mi ni pn Nn Thu , vng ngho ti mi ni m rng, hnh H9.5.
V vng Pht l bn dn loi n c nng tp cht cao y o t cc in t t do
(trong dy dn) khuch tn d dng qua mi ni pn Nn Pht vo lp bn dn p ti vng Thu.
Ti vng ny cc in t tr thnh cc ht ti thiu, tng t nh trng diode phn cc
thun.
V vng Nn hp v l bn dn c nng tp cht thp nht , do s lng l trng
trong vng ny hu hn. Nh vy, mt phn nh cc in t sau khi qua mi ni Nn Pht c
th ti hp vi s l trng hu hn trong cc nn. Mt s rt t cc in t khng ti hp i ra
khi cc nn l dng in t ha tr, hnh thnh dng in nh trong cc nn.
Phn ln cc in t t cc pht i vo vng nn khng thc hin qu trnh ti hp
nhng khuch tn vo vng ngho ca mi ni pn Nn Thu. Ngay khi n vng ny cc in
t c ko qua vng mi ni phn cc nghch do tc ng ca in trng to bi lc hp
dn gia cc ion dng v m. Thc s chng ta c th thy cc in t c ko sang vng
ngho ca mi ni phn cc nghch Nn Thu do in p ca ngun ngoi ang t trn cc thu.
Cc in t i ngang qua vng Thu n cc Thu v i v cc dng ca ngun p ngoi
ang cp vo cc thu. iu ny hnh thnh dng cc thu IC . Dng cc thu c gi tr rt ln hn
so vi dng qua cc nn IB . y chnh l l do to c li dng in (current gain).
9.1.3.CC THNH PHN DNG IN QUA TRANSISTORS
Transistor npn
Transistor pnp
HNH H 9.6: Thnh phn dng in qua transistor.
309
Trong hnh H9.6 trnh by cc thnh phn dng in v hng ca dng qua transistor
npn v pnp. Quan h gia cc thnh phn dng in tha nh lut Kirchhoff 1 nh sau:
IE IC IB
(9.1)
Nn nh gi tr dng qua cc nn IB rt nh so vi dng IC . Cc ch s dng trong cc

k hiu dng in c ghi bng cc ch in hoa xc nh cc thnh phn dng in ny l
dng mt chiu DC.
Vng ngho ti mi ni
Nn Thu (B-C)
Phn cc Nghch
mi ni Nn Thu
Dng in t
cc Thu ( IC )
Dng in t
cc Nn ( IB )
Vng ngho ti mi ni
Nn Pht (B-E)
Phn cc Thun
mi ni Nn Pht
Dng in t cc Pht
Dng in t
cc Nn ( IB )
IE IC IB
Dng in t
cc Thu ( IC )
HNH H 9.5
310
9.1.4.CC THNG S V C TUYN CA TRANSISTORS:

Khi cc transistor npn
hay pnp c kt ni vi
cc ngun p DC phn
cc, gi : VBB l ngun p
DC phn cc thun mi
ni nn pht v VCC l
ngun p DC phn cc
nghch mi ni nn thu ,
xem hnh H9.7.
HNH H 9.7
9.1.4.1.H S DC V H S DC :
H s DC c gi l li dng in DC v c nh ngha l t s dng DC qua
cc thu IC so vi dng DC qua cc nn IB . Ta c:
DC
IC
(9.2)
IB
H s DC cn c gi l hFE l thng s ca transistor trong mch tng ng

tnh theo thng s h thng c p dng khi thit k cc mch khuch i dng transistor. Gi
tr ca h s DC hFE trong phm vi t 20 n 200 hay ln hn.
H s DC c nh ngha l t s dng DC qua cc thu IC so vi dng DC qua cc
pht IE . Ta c:
DC
IC
(9.3)
IE
H s DC t c s dng hn so vi h s DC trong qu trnh tnh ton hay thit k.

Gi tr ca h s DC trong phm vi t 0,95 n 0,98 hay ln hn.
9.1.4.2.GII TCH P V DNG TRONG MCH PHN CC TRANSISTOR:
Trong mch phn cc hnh H9.8, gi:

VBE : in p DC gia cc nn v cc pht.
VCE : in p DC gia cc thu v cc pht.

VCB : in p DC gia cc thu v cc nn.2
VBB l p phn cc thun mi ni nn pht (BE) v
VCC l p phn cc ngc mi ni nn thu (BC). Khi
HNH H 9.8
mi ni BE phn cc thun, tng t nh diode

in p gia mi ni BE l: VBE 0,7 V .
311
Mc d trong cc transistor thc s, p VBE c th cao n mc 0,9 V v ph thuc vo

dng in, trong ti liu ny chng ta dng gi tr 0,7 V n gin trong qu trnh phn tch cc
vn c bn.
p dng nh lut Kirchhoff 2 cho mt li pha cc nn, ta c quan h:
VBB RB IB VBE
(9.4)
VBB VBE
(9.5)
Suy ra:
IB
RB
p dng nh lut Kirchhoff 2 cho mt li pha cc thu, ta c quan h:
VCC RC IC VCE
(9.6)
Suy ra:
VCE VCC RC IC VCC RC DC.IB
(9.7)
TH D 9.1:
Cho mch phn cc transistor trong hnh H9.9, bit
transistor c h s DC 150 . Xc nh cc dng in: IB ;
IC ; IE v cc p VCE v VCB .
GII:
p dng quan h (9.5), ta c:
HNH H 9.9
IB
VBB VBE
RB
5 V 0,7 V
0,43mA
10 k
p dng quan h (9.2) suy ra dng qua cc thu l:
IC DC .IB 150 0,43 64,5 mA
p dng quan h (9.1) hay nh lut Kirchhoff 1, ta c:
IE IC IB 64,5 0,43 64,93 mA
p dng quan h (9.7) xc nh p VCE , ta c:
VCE 10 100 0,0645 3,55 V
p dng nh lut Kirchhoff2 ta c:
VCB VCE VBE 3,55 0,7 2,85 V
9.1.4.3.C TUYN CC THU CA TRANSISTOR:
p dng mch in trong hnh H9.10 xc

nh c tuyn cc thu bng thc nghim. c
tuyn cc thu ca transistor l th m t
quan h gia p VCE theo dng IC , khi chn
dng IB lm thng s.
c tuyn cc thu ca transistor c trnh
by trong hnh H9.11.
HNH H 9.10
312
Vng ngng dn
Vng
bo
ha
Vng
hot ng
Vng
BREAK
DOWN
b. Quan h gia dng IC theo p VCE khi thay i gi tr ca dng IB

IB1 < IB2 < IB2 < . . .
a. Quan h gia dng IC theo p VCE ti mt gi tr ca dng IB
HNH H 9.11: c tuyn cc thu ca transistor
Gi s p VBB c chnh to ra gi tr IB bt k v p VCC 0 V . Ti iu kin ny

cc mi ni BE v BC phn cc thun v p VBE 0,7 V trong khi p VCE 0 V . Khi cc mi ni
BE v BC phn cc thun, transistor hot ng trong vng bo ha.
Khi tng p VCC , p VCE tng dn khi dng IC tng; qu trnh c xc nh bi on c
tuyn AB trong hnh H9.11a. IC tng khi VCC tng v VCE duy tr gi tr nh hn 0,7 V ty thuc
vo s phn cc thun mi ni nn thu.
Mt cch l tng, khi VCE vt cao hn gi tr 0,7 V, mi ni BC bt u phn cc
nghch v transistor bt u i vo vng hot ng hay vng tuyn tnh. Khi mi ni BC phn
cc nghch dng IC ngng tng v duy tr gi tr khng i tng ng vi gi tr ca dng IB
khi p VCE tip tc gia tng. Thc s dng IC c hi gia tng gi tr khi VCE gia tng do rng
ca vng ngho ti mi ni nn thu. H qu ny do mt s t l trng thc hin qu trnh ti hp
trong vng nn lm h s DC hi gim thp gi tr. Qu trnh ny c trnh by bng on BC
trn c tuyn cc thu . Phn c tuyn ny trnh by quan h IC DC .IB .
Khi VCE tng n mc ln, mi ni BC phn cc nghch t n trng thi ph v
phn cc nghch v dng cc thu gia tng rt nhanh. Qu trnh ny c biu din bng on
c tuyn pha phi in C trong hnh H9.11a. Cc transistor khng c tnh ton hot
ng trong vng ph v phn cc nghch ca mi ni nn thu.
H c tuyn cc thu l cc th trnh by quan h gia dng IC theo p VCE khi thay i
gi tr IB , hay chn dng IB lm thng s. H c tuyn cc thu c trnh by trong hnh H9.11b.
Khi IB 0 transistor hot ng trong vng ngng dn (cut off) mc d ta c th nh c gi
tr rt nh ca dng IC .
313
TH D 9.2:
Cho mch dng xc nh
c tnh cc thu nh trong hnh
H9.10, gi s transistor c h s
khuch i DC DC 100 , gi tr
ca dng IB kho st trong phm
vi t : 5 A 25 A .
Dng ca h c tuyn cc
thu c xc nh theo phn tch
trn trnh by trong hnh H9.12 vi
thng s IB thay i nhy cp
tng ng vi 5 A .
HNH H 9.12: H c tuyn cc thu ca transistor

9.1.4.4.VNG NGNG DN (CUT OFF):
Nh trnh by trong mc trn khi dng

IB 0 ; transistor hot ng trong vng ngng
dn, trong hnh H9.13 cc nn h mch m t
dng qua cc nn trit tiu. Trong iu kin ny,
s c dng in r qua cc thu rt nh , ICEO
ph thuc vo iu kin nhit tc ng ln cc
ht ti. Trong qu trnh gii tch, thng b qua
gi tr ICEO ti vng ngng dn v xem nh
VCE VCC . Trong vng ngng dn cc mi ni

pn nn pht v nn thu u phn cc nghch.
HNH H 9.13: Dng in r cc thu ICEO ti trng thi

ngng dn (cut off).
9.1.4.5.VNG BO HA (CUT OFF):
Khi mi ni nn pht phn cc thun

v dng IB gia tng, dng cc thu IC cng gia
tng theo quan h IC DC .IB , lc ny p VCE
c xc nh theo quan h (9.6) hay:
VCE VCC RC .IC

HNH H 9.14: Dng IB tng lm IC tng v VCE gim.
Khi transistor bo ha dng
IC tng khng ph thuc vo
tc tng ca dng I .
B
Tm li khi IB v IC tng th VCE gim.

Khi VCE gim n trng thi gi tr bo ha
VCE SAT , mi ni nn thu bt u phn cc

thun v dng IC tng nhanh. Ti lc bo
ha quan h IC DC .IB khng cn duy tr chnh xc. p VCE SAT thng c xc nh ti im

khuu ca c tuyn cc thu v c gi tr khong VCE SAT 0,4V 0,5V i vi transistor Silicon.
9.1.4.6.NG TI DC (DC LOAD LINE):
314
Vng bo ha v vng
ngng dn trong c tuyn cc thu
c quan h vi ng ti in DC.
Khi cp ngun cho transistor hot
ng theo mch trong hnh H9.10
hay H9.14; phng trnh cn bng
p trong mt li chc cc thu pht
ca transistor c vit theo quan
h (9.6), ta c: VCE VCC RC .IC
Vi gi tr VCC v RC cho
trc, ta xem p VCE l hm theo
bin s IC . th m t quan h
VCE f IC c dng ng thng

chnh l ng ti DC. ng
thng ny ct trc honh ti im c
ta
HNH H 9.15: ng ti DC
CE
VCC ; IC 0 ti vng
ngng dn.
ng ti DC cn ct trc
tung ti im c ta VCE 0 ;IC
VCC
; v tr ny nm su trung vng bo ha, xem hnh
RC
H9.15. Phm vi cn li ca ng ti DC l vng hot ng tuyn tnh ca transistor.

TH D 9.3:
Cho mch transistor theo hnh H9.16,
gi s p bo ha VCE SAT 0,2 V ; xc nh
trng thi hot ng ca transistor.
GII
u tin xc nh dng qua cc nn
ca transsitor theo iu kin hin c ca mch
in phn cc theo hnh H9.16.
HNH H 9.16
IB
VBB VBE
RB
3V 0,7V
0,23mA
10 k
Gi s transistor hot ng trong vng tuyn tnh, ta c quan h sau:
IC DC .IB 50 0,23 mA 11,5 mA

Mun bit transistor c hot ng trong vng bo ha hay khng ta cn xc nh gi tr
ca dng IC lc bo ha. Ta c quan h sau:
IC SAT
VCC VCE SAT

RC
10 V 0,2 V
9,8 mA
1k
So snh kt qu ca dng IC va tm c vi gi tr dng IC SAT ta kt lun IC IC SAT

nn transistor ang lm vic trong trng thi bo ha.
315
9.1.4.7.NH HNG NHIT LN H S KHUCH I DNG DC :
HNH H 9.17: nh hng ca nhit ln h s khuch i DC DC
H s khuch i DC hay hFE l thngs quan trng ca transistor, khi phn tch hay thit
k ta cn kho st thng s ny mt cch k lng v chi tit hn. Thc s DC khng hon ton
l hng s, gi tr ny thay i khi dng IC v nhit mi trng thay i , xem hnh H9.17.
Khi duy tr nhit ca cc mi ni pn n nh v gia tng dng IC h s DC tng n
mc ti a.
Khi duy tr gi tr IC khng i v thay i nhit , DC thay i trc tip khi nhit thay
i: nhit tng h s DC tng v ngc li nhit gim h s DC gim.
Trong cc ti liu k thut thng cho gi tr DC hay hFE ti gi tr dng IC nh trc. Hn
na, vi gi tr dng IC ti nhit nh trc, h s DC cng thay i theo tng linh kin d rng
cc linh kin ny c cng m s; s kin ny ph thuc vo phng thc sn xut ca mi nh
sn xut. H s DC c xc nh ng vi gi tr no ca dng IC v thng l gi tr cc tiu
DC min mc d gi tr cc i v cc gi tr mu ca DC i khi cng c cp n trong cc

ti liu k thut.
9.1.4.8.CNG SUT CC I CA TRANSISTOR:
Transistor cng nh cc linh kin in t khc u c gii hn trong phm vi hot ng.
Cc gii hn ny c xc nh theo thng s nh mc qui nh bi cc nh sn xut v trnh
by trong cc ti liu k thut. Theo tiu chun, gi tr ti a cho php ca cc thng s transistor
bao gm in p: VCB ; VCE ; VBE ; dng IC v cng sut tiu tn PD . Trong :
PD VCE .IC
(9.8)
Tch s ca VCE v IC khng c vt qu mc cng sut tiu tn cc i cho php
PD max v cc gi tr VCE v IC khng th t gi tr ti a cng lc.
316
TH D 9.4:
Cho Transistor trong hnh H9.18 c cc
gi tr cc i ca cc thng s nh sau:
PD max 800 mW ; VCE max 15 V ; IC max 100 mA
p VCC
Xc nh gi tr ti a cho php ca ngun

c th iu chnh khng vt qua cc gii
hn cho php. Thng s no s vt gi tr cho

php trc tin.
GII
Dng qua cc nn:
HNH H 9.18
IB
VBB VBE
RB
5 V 0,7 V
0,195 mA
22 k
Dng qua cc thu:
IC DC .IB 100 0,195 19,5 mA

Dng IC c gi tr nh hn dng cc i cho php IC max 100 mA , hn na gi tr ny
khng ph thuc vo p VCC m ch ph thuc vo dng IB v h s khuch i DC .
in p t ngang qua hai u in tr RC :
VR RC .IC 1k 19,5 mA 19,5 V

C
p dng nh lut Kirchhoff 2 trong mt li cha cc thu v pht, ta c:
VCC VCE VR
Hay:
VCE VCC VR
Khi VCE t gi tr ti a cho php, ta c quan h:
VCC max VCE max VR 15 19,5 34,5 V

C
Cng sut tiu tn trn transistor ti lc t VCE max :
PD VCE max IC 15 V 19,5 mA 292,5 mW

Gi tr PD tm c nh hn gi tr PD max 800 mW . Tm li gi tr VCE max 15 V t gii
hn cho php trc tin khi thay i p VCC khng vt qu gii hn 34,5 V.
Tuy nhin nn nh khi ngng cp dng cc nn chuyn transistor sang trng thi ngng
dn, p VCE lc ny t gi tr bng vi p VCC max 34,5 V .
9.1.4.9.S THAY I CNG SUT CC I THEO NHIT :
Tng t nh cc linh kin bn dn khc, gi tr cng sut tiu tn PD max thng c cho
ti iu kin nhit 25oC. Khi nhit lm vic ca mi trng tng ln gi tr PD max cn hiu
chnh gim thp xung. H s gim cng sut tiu tn K PD c n v tnh theo mW o , gi PD
C
l thay i cng sut tiu tn khi nhit thay i trong khong T , ta c quan h sau:
PD KPD T
(9.9)
317
TH D 9.5:
Cho Transistor bt k c cng sut tiu tn cc i cho php l PD max 1W ti 25oC. H
s thay i cng sut tiu tn ca linh kin l KPD 5 mW o . Xc nh cng sut tiu tn ti a
cho php ca linh kin khi lm vic ti 70oC.

GII
p dng quan h (9.9) ta c:
PD KPD T 5 70 25 225 mW
Suy ra cng sut tiu tn ti a cho php ca transsitor khi lm vic ti 70oC l:
PDmax
70o C
PDmax
25o C
PD 1000 225 775 mW
9.2.CAC CH LAM VIC CUA TRANSISTOR:

9.2.1.CH KHUCH I:
9.2.1.1.CC I LNG DC V AC:
Trc khi trnh by ch khuch i ca transistor, chng ta cn xc nh k hiu dng

cho cc i lng dng, p v in tr trong mch; v mch khuch i s hot ng ng thi
vi cc i lng xoay chiu AC v mt chiu DC.
Trong mc ny, chng ta dng cc k hiu ch in hoa cho dng ( I ) v p ( V ) biu th
cho gi tr hiu dng, gi tr trung bnh v gi tr nh n nh (peak to peak) ca p AC. Cc k
hiu vit bng ch thng dng biu din cc gi tr tc thi cho dng ( i ) v p ( v ).
Cc i lng DC c nh ch s bng cc k t in hoa, th d nh IB , IC hay VBE , VCE ..
cc k hiu VC , VB , VE l p tnh t cc cc ca transistor tnh n im mass chung (nt chun
0V) ca mch.
Cc i lng AC l cc i lng thay i theo thi gian c nh ch s bng cc k
t in thng, th d nh ib , ic hay v be , v ce .. cc k hiu v c , vb , ve l p AC t cc cc ca
transistor tnh n im mass chung (nt chun 0V) ca mch.
Cc in tr trong mch c k hiu bng ch in hoa R , cc ni tr trong transistor c
k hiu l r ' , r 'e . Cc in tr mch ngoi dng cho gii tch vi tn hiu DC c cc ch s l ch
in hoa nh: RE ; RB .. cc in tr mch ngoi dng cho gii tch vi tn hu AC c ch s l cc
ch thng nh: Re .
9.2.1.2.KHO ST MCH KHUCH I DNG TRANSISTOR:
Theo cc ni dung kho st nu trong cc mc trn, dng qua cc thu ca transistor

c khuch i v bng tch s dng qua cc nn vi h s khuch i . Gi tr dng in
cc nn thng rt nh so vi dng cc thu v cc pht, do c th xem dng cc thu v cc
pht c gi tr xp x bng nhau.
Xt mch in trong hnh H9.19, ngun p AC vin c cung cp xp chng vi p DC
phn cc VBB ti cc nn bng cch u ni tip cc ngun v ni tip vi in tr cc nn RB .
in p phn cc VCC ni n cc thu thng qua in tr RC .
318
Ngun p AC to ra
dng AC qua cc nn dn n
dng AC qua cc thu. Dng AC
qua cc thu to p AC ngang
qua in tr RC . Tc ng ca
transistor trong trng hp ny
khuch i tn hiu AC cp vo
cc nn v c a ra trn
in tr RC . Cn nh p AC
nhn trn RC o pha so vi p
b./ Dng p AC vo v
p AC ra trn cc thu.
a./ p AC v p DC phn cc u ni tip
HNH H 9.19
AC cp vo trn cc nn. Do
mi ni nn pht phn cc
thun nn in tr ni xt i
vi tn hiu AC c gi tr rt
thp.
Gi r 'e l in tr ni cc pht xt i vi tn hiu AC, dng cc pht tnh i vi p AC l:
ie ic
vb
(9.9)
r 'e
p AC trn cc thu l vC bng vi p AC t ngang qua hai u in tr RC :
v C RC .ic RC .ie
p AC ti cc nn c xc nh theo quan h:
vb vin RB .ib
vC c xem l p AC ra ca mch khuch i. T s ca p v C v vb l lp in p
(hay h s khuch i p) A v ca mch transistor.
Av
vc
vb
RC .ie
r 'e .ie
RC
(9.10)
r 'e
V RC l in tr ngoi v c gi tr rt ln so vi in tr ni r 'e in p ra nhn c lun

c bin rt ln hn so vi in p cp vo.
TH D 9.6:
Cho mch khuch i p AC dng transistor
nh trong hnh H9.20; xc nh li in p v p
ng ra; bit in tr ni r 'e 50 .
GII:
Av
RC
r 'e
1k
20
50
p AC ng ra l :
v out A v .vin 20 100 mV 2 V

HNH H 9.20
319
9.2.2.CH NG NGT:
b./ Trng thi bo ha; Kha ng kn
a./ Trng thi ngng dn; Kha h
HNH H 9.21
Trong hnh H9.21

trnh by nguyn l hot
ng c bn ca
transistor nh mt kha
in dng ng ngt
mch.
Trong
hnh
H9.21a transistor hot
ng trong vng ngng
dn (cut off) v mi ni
nn pht khng c
phn cc thun. Vi
iu kin ny xem nh
cc thu v pht h
mch v c k hiu
bng kha in tng ng h mch.

Trong hnh H9.21b transistor hot ng trong vng bo ha (saturation) v mi ni nn
pht v mi ni nn thu c phn cc thun; dng cc nn c gi tr ln to ra dng cc
thu t n mc bo ha. Vi iu kin ny xem nh cc thu v pht kn mch v c k
hiu bng kha in tng ng kn mch. Thc s khi transistor t n mc bo ha, gi
tr VCEsat c gi tr trong khong 0,3 V n 0,5 V.
9.2.2.1.IU KIN T TRNG THI NGNG DN:
Theo phn tch trn, transistor hot ng trong vng ngng dn khi mi ni nn pht
khng phn cc thun. B qua nh hng c ca dng in r, tt c cc dng in khc trong
mch c gi tr bng 0 v p VCE bng p ngun ngoi VCC . Tm li:
VCE SAT VCC
(9.11)
9.2.2.2.IU KIN T TRNG THI BO HA:
Theo phn tch trn, khi mi ni nn pht phn cc thun v dng cc nn ln

to dng qua cc thu cc i, transistor t trng thi bo ha. Khi t trng thi bo ha, ta
c quan h sau:
IC SAT
VCC VCE SAT

RC
(9.12)
Trong trng hp gi tr VCE SAT c gi tr rt b so vi VCC ta c th p dng quan h:
IC SAT
VCC
RC
(9.13)
Gi tr cc tiu ca dng qua cc nn to trng thi bo ha cho transistor tha quan h

sau y:
IB min
IC SAT
DC
(9.14)
Trong thc t vn hnh ta to ra dng IB c gi tr hi ln hn gi tr IB min xc nh

theo quan h (9.14) duy tr tt trng thi bo ha cho transistor.
320
TH D 9.7:
Cho mch transistor nh trong hnh H9.22; xc nh:
a./ p VCE khi Vin 0 V
b./ Dng IB min
transistor t trng thi bo ha, bit
DC 200 , b qua gi tr p VCE SAT .

c./ Gi tr cc i ca in tr RB khi Vin 5 V .
GII:
a./ p dng quan h : VCE VCC RC .IC , khi Vin 0 V dng
qua cc nn IB 0 A , dng IC DC .IB 0 A transistor ngng
dn; suy ra VCE VCC 10 V .
HNH H 9.22
b./ Khi b qua nh hng ca p VCE SAT , dng IB min c xc nh nh sau:
IC SAT
IB min
VCC
RC
IC SAT
DC
10 V
10 mA
1k
10 mA
0,05 mA 50 A
200
c./ Gi tr cc i ca in tr RB ; p dng phng trnh cn bng p pha cc nn, ta c:
VBB RB .IB VBE

Suy ra:
RB max
Vin VBE
IB min
RB
Hay:
VBB VBE
IB
5 V 0,7 V
86 k
50 A
TH D 9.8:
Cho mch transistor nh trong hnh H9.23;
trong n LED (Light - Emitting Diode) l diode
pht quang khi c phn cc thun v s khng
pht sng khi phn cc nghch hoc khng c
phn cc.
Cho dng in qua LED khi pht sng l 30
mA. p cp vo cc nn c dng xung ch nht.
Bit: VCC 9 V ; VCE SAT 0,3 V ; RC 270 ;
RB 3,3 k ; DC 50 .
Xc nh bin ca sng xung ch nht
transistor bo ha. Khi tnh ton chn dng
in qua cc nn bng 2 ln gi tr IB min m
HNH H 9.23
bo transistor bo ha hon ton.
GII:
321
Trc tin vi cc gi tr ca phn t mch ta xc nh gi tr dng in IB min trc tin; ta
c dng IC SAT xc nh theo quan h sau:
IC SAT
VCC VCE SAT

RC
9 0,3
0,0322 A 32,2mA
270
Suy ra:
IB min
IC SAT
DC
32,2
0,644 mA
50
Theo yu cu ca u th d khi chn dng qua cc nn dng tnh bin cho p xung
ch nht c gi tr gp 2 ln IB min , ta c:
IB 2.IB min 2 0,644 1,288 mA

Gi Vin l bin xung ch nht , ta c quan h sau ti cc nn:
Vin RB IB VBE 3,3 k 1,288 mA 0,7 V 4,95 V

Tm li bin xung ch nht cn c transistor bo ha l Vin 4,95 V
9.3.HINH DANG VA VI TRI CHN RA CUA TRANSISTOR:
HNH H 9.24: Transistor v nha dng trong cc ng dng tng qut vi tn hiu c bin nh.
HNH H 9.25: Transistor v kim loi dng trong cc ng dng tng qut vi tn hiu c bin nh.
322
HNH H 9.26: Cu to ca Transistor package, nhiu transistor cha trong cng mt v.
HNH H 9.27: Transistor c cng sut trung bnh n cng sut ln (Transistor cng sut).
323
HNH H 9.28: Transistor dng trong cc ng dng c tn s cao (RF transistors).
9.4.CAC PHNG PHAP PHN CC TRANSISTOR:

9.4.1. IM LM VIC DC:
9.4.1.1. PHN CC DC:
Phn cc l thao tc xc nh im lm vic DC cho cc b khuch i hot ng

trong vng tuyn tnh. Nu b khuch i khng c phn cc ng im lm vic DC i vi
tn hiu p ng vo v ng ra, c th dn n qu trnh ngng dn hay bo ha khi cp tn hiu
vo b khuch i.
Trong hnh H9.29 trnh by
K hiu ca b khuch i
cc nh hng khi phn cc DC
thch hp hay khng thch hp cho
cc b khuch i o pha.
a./ Khuch i tuyn tnh, tn hiu ra o pha v c bin ln hn tn

hiu vo nhng khng b si dng.
Trong hnh a tn hiu ra c

khuch i, nhng o pha so vi
tn hiu ng vo. Tn hiu ra dao
ng quanh gi tr mc p VDC
phn cc trn ng ra.
b./ Khuch i phi tuyn, tn hiu ra o pha c bin ln hn tn

hiu vo nhng b xn u pha trn do transistor ngng dn.
Phn cc khng thch hp s

to ra s si dng ca tn hiu ra
nh trng hp trnh by trong
hnh b v c.
Trong hnh b phn p dng
ca tn hiu ra b gii hn l do
im Q (im lm vic DC) phn
cc qu gn vng ngng dn.
c./ Khuch i phi tuyn, tn hiu ra o pha v c bin ln hn tn

hiu vo nhng b xn u pha di do transistor bo ha.
HNH H 9.29: Khuch i tuyn tnh v phi tuyn.
Trong hnh c phn p m ca

tn hiu ra b gii hn l do im Q
(im lm vic DC) phn cc qu
gn vng bo ha.
9.4.1.2. GII TCH MCH DNG TH:
Transistor trong hnh H9.30 c phn cc khi thay i p VCC v VBB t c cc gi

tr IB ; IC ; IE v VCE . H c tuyn cc thu ca transistor c trnh by trong hnh H9.30b, ta s
dng cc c tuyn ny m t kt qu t c t phng php phn cc DC. Trong hnh
H9.31, chng ta xc nh 3 gi tr dng IB kho st s thay i gi tr ca dng IC v p VCE .
u tin iu chnh p VBB c c dng IB 200 A , xem hnh H9.31a; t quan h
IC DC .IB suy ra IC 20 mA , ta c p VCE xc nh nh sau:

324
a./ Mch phn cc
b./ H c tuyn cc thu
HNH H 9.30: Phn cc transistor dng th
HNH H 9.31: Phn cc thay i im lm vic Q ca transistor.

325
VCE VCC RC .IC 10 V (20 mA).(220 ) 5,6 V

im lm vic Q c k hiu l Q1 xc nh trong hnh H9.31a .
K tip trong hnh H9.31b, gi tr VBB c tng ln to ra dng IB 300 A v dng
IC 30 mA , ta c:
VCE 10 V (30 mA).(220 ) 3,4 V
im lm vic Q c k hiu l Q2 xc nh trong hnh H9.31b.
Sau cng trong hnh H9.31c, gi tr VBB c tng cao hn to ra dng IB 400 A
v dng IC 40 mA , ta c:
VCE 10 V (40 mA).(220 ) 1,2 V

im lm vic Q c k hiu l Q3 xc nh trong hnh H9.31c.
9.4.1.3. NG TI DC (DC LOAD LINE):
Cn ch khi dng IB tng,

dng IC tng v p VCE gim
v ngc li khi dng IB gim,
dng IC gim v p VCE tng.
Khi iu chnh tng hay gim
p VBB im lm vic DC ca
transistor s di chuyn trn
ng thng c gi l
ng ti DC (xem li mc
9.1.4.6).
ng ti DC ct trc
honh ti 10V tng ng vi
quan h VCE VCC . y l
HNH H 9.33: ng ti DC.
im ngng dn v IC IE 0
Thc s ti v tr ngng dn ta c dng r ICBO c gi tr rt nh, thng thng chng ta b

qua gi tr ny.
ng ti DC ct trc tung ti v tr IC 45,5 mA y l im bo ha ca transistor v
dng IC t gi tr ti a. Thc s c gi tr p rt nh VCE SAT t ngang qua cc thu v pht v
dng IC SAT hi nh hn gi tr IC 45,5 mA , xem hnh H 9.33.
ng ti DC c dng ng thng xc nh theo quan h hm nh sau:
1
V
IC f VCE .VCE CC
R
R
C
C
(9.15)
326
9.4.1.4. VNG LM VIC TUYN TNH
Vng dc theo ng ti DC t v tr bo
ha n v tr ngng dn c gi l vng lm vic
tuyn tnh ca transistor. Khi transistor hot ng
trong vng ny, in p ra c ti to mt cch
tuyn tnh vi in p vo.
Trong hnh H9.34 trnh by mt th d v hot
ng ca transistor trong vng tuyn tnh. Khi cha
cp p vin vo cc nn, im lm vic Q c xc
nh qua cc php tnh sau:
IBQ
HNH H 9.34:
VBB VBE
RB
3,7 V 0,7 V
300 A
10 k
ICQ DC .IBQ 100 300 A 30 mA
VCEQ VCC RC .ICEQ 10 V 30 mA . 220 3,4 V

Gi s p sin ng
vo vin xp chng vi p
phn cc VBB to thnh
dng sin ti cc nn c
bin l 100 A dao
ng quanh im lm
vic
Q
c
dng
IBQ 300 A . S kin
ny a n dng cc
thu c bin l
10 mA dao ng quanh
im lm vic Q c dng
ICQ 30 mA . Vi s thay
HNH H 9.35:
i ca dng cc nn v
dng cc thu khi cp p
sin dn n p gia cc
thu v pht c bin l
2,2 V dao ng quanh
im lm vic Q c
VCEQ 3,4 V .
im A trn ng ti DC trong hnh H9.35 ng vi nh dng ca p sin vo vin .

im B trn ng ti DC trong hnh H9.35 ng vi nh m ca p sin vo vin .
im Q trn ng ti DC trong hnh H9.35 ng vi im 0 ca p sin vo vin .
VCEQ , ICQ v IBQ lm thng s ca im lm vic DC khi khng cp p sin vo cc nn.
327
9.4.1.5. S SI DNG (DISTORSION) :
im lm vic Q chn gn khu vc ngng dn
im lm vic Q chn gn khu vc bo ha
HNH H 9.36: S si dng p ng ra khi chn im lm vic Q
Vi ni dung phn tch vng lm

vic tuyn tnh nh va trnh by, im
lm vic Q c chn trn ng ti
DC ngay v tr trung im trnh s
si dng p ra sau khi c khuch i.
Trong hnh H9.36 khi chn im
lm vic Q lch v vng bo ha hay
ngng dn s lm tn hiu sin trn ng ra
b xn nh dng hay nh m.
Tuy nhin s si dng p ng ra
cn ph thuc bin ca p sin ng
vo trn cc nn. Trong hnh H9.37 trnh
by trng hp im lm vic Q c
chn ti v tr gia trn ng ti DC,
nhng bin tn hiu p vo qu ln
n n trng thi xn nh dng v
nh m ca p ng ra.
HNH H 9.37: S si dng p ng ra do bin p vo qu ln
TH D 9.9:
Xc nh im lm vic Q ca transistor
cho trong mch hnh H9.38. Suy ra bin nh
ca dng cc nn mch hot ng trong vng
tuyn tnh. Bit DC 200 .
GII
Vi mch cho trc cc thng s, im
lm vic Q xc nh bi cp gi tr IC v VCE .
HNH H 9.38
IB
VBB VBE
RB
10 V 0,7 V
0,1979 mA
47 k
328
Dng cc thu :
IC DC .IB 200. 0,1979 mA 39,6 mA
p DC t ngang qua cc thu v cc pht:
VCE VCC RC .IC 20 V 330 . 39,6 mA 6,93 V

im lm vic Q ca transistor c gi tr l : ICQ 39,6 mA v VCEQ 6,93 V
Khi transistor ngng dn ta c :
IC cutoff 0 A
Khi transistor dn bo ha, ta c:
IC SAT
VCC
RC
20 V
0,0606 A 60,6 mA
330
Vi kt qu tnh ton c, ta xc nh v
tr im lm vic Q trn ng ti DC, xem
hnh H9.39. im lm vic Q c chn gn
vng bo ha, mun p ra khng si dng ta
cn c bin ca dng xoay chiu qua cc
thu gii hn trong phn vi IC IC SAT ICEQ .
IC IC SAT ICEQ 60,6 39,6 21mA

Bin nh ca dng xoay chiu cp vo
cc nn khng to si dng c xc nh
theo quan h sau:
IB
HNH H 9.39
IC
DC
21
0,105 mA
200
9.4.2. PHN CC DNG CU PHN P:

Trong cc ni dung trn, chng dng hai ngun DC c lp
phn cc transistor. Trong thc t ch cn dng duy nht mt
ngun DC phn cc cho transistor, xem hnh H9.40. Trong cc
mch nguyn l n gin ha, ta thay th k hiu ca ngun p
DC bng k hiu vng trn c ghi cc tnh ngun p phn cc VCC .
in p phn cc ti cc nn c cung cp bng cu
phn p dng in tr R1 v R2 , vi ngun p DC cp vo cu
phn p l VCC . Trong hnh H9.40, c hai dng nhnh t nt A i
xung im Gnd (Ground) chung ca mch: mt dng i qua R2 v
thnh phn dng nhnh cn li qua ni ni BE ca transsistor v RE .
Nu dng qua cc nn rt nh so vi dng qua R2 , mch phn
HNH H 9.40
cc xem nh ch ph thuc vo cu phn p bao gm cc in

tr R1 v R2 .
Trong trng hp dng cc nn khng nh b qua khi so snh vi dng qua R2 ,

ta cn ch n in tr nhp ti cc nn RINbase ; in tr ny xut hin gia cc nn n
im Gnd v song song vi in tr R2 , xem hnh H9.41.
329
9.4.2.1. IN TR NHP TI CC NN :
Nhn v cc nn
ca transistor
xy dng cc quan h dng tnh ton

in tr nhn ti cc nn, chng ta s dng s
mch tng ng trong hnh H9.42. Trong :
VIN l in p DC gia cc nn v Gnd.
IIN l dng DC vo cc nn.

p dng nh lut Ohm ta c:
RINbase
VIN
IIN
(9.16)
p dng nh lut Kirchhoff p cho mt li nn pht

ta c:
HNH H 9.41
VIN VBE RE .IE
(9.17)
Gi thit VBE RE .IE , quan h (9.17) thu gn li nh sau:
VIN RE .IE
(9.18)
Hn na ta cn c quan h : IE IC DC .IB , suy ra:
VIN DC .RE .IB
(9.19)
V dng in IN IB , so snh quan h (91,6) v (9.19), ta c:
RINbase DC .RE
(9.20)
HNH H 9.42
TH D 9.10:
Xc nh in tr nhp t cc nn ca transistor trong mch hnh
H9.43, bit h s khuch i DC 125
GII
p dng quan h (920), ta c:
RINbase DC .RE 125. 1k 125 k

9.4.2.2. GII TCH MCH PHN CC DNG CU PHN P :
Xt transistor npn dng mch cu phn p phn cc theo hnh

H9.44a. Khi c xt n in tr nhp ti cc nn: RINbase DC .RE , gi
HNH H 9.43
in tr tng ng do RINbase ghp song song vi R2 t cc nn xung im Gnd l RBG , ta c:
RBG
Hay:
RBG
RINbase .R2
RINbase R2
R2
R2
1
.R
DC
E
DC .RE .R2
DC .RE R2
(9.21)
(9.22)
330
p dng cu phn p xc nh in p
VB l p t cc nn xung n Gnd.
RBG.VCC
VB
(9.23)
RBG R1
T kt qu ny chng ta suy ra cc i
lng khc cn li trong mch bng cc quan
h sau y:
VE VB VBE
(9.24)
VE l p t cc pht xung n Gnd.

HNH H 9.44
IE
VE
(9.25)
RE
Dng qua cc pht tha quan h :
1
(9.26)
IC . DC
DC
DC
1 , ta xem nh IE IC , t suy ra p gia hai cc thu pht ca transistor:
IE IC IB IC
Khi DC
IC
VCE VCC RC .IC VE VCC VE RC .IE
(9.27)
TH D 9.11:
Xc nh im lm vic ca mch transistor trong hnh H9.45,
bit h s khuch i DC 100 .
GII
in tr nhp t cc nn:
RINbase DC .RE 100. 560 56 k

in tr tng ng t cc nn n Gnd:
RBG
RINbase .R2
RINbase R2
56 k . 5,6 k 5,091k
56 k 5,6 k
p VB t nn xung Gnd:
HNH H 9.45
VB
RBG.VCC
RBG R1
5,091k .10 V
5,091k 10 k
3,373 V
p VE t pht xung Gnd:
VE VB VBE 3,373 0,7 2,673 V

Dng IE :
IE
VE
RE
2,673 V
4,77 mA
560
331
p dng quan h (9.26) xc nh dng IC :
DC
100
IC
.IE
.4,77 4,727 mA
1
100
1
DC
p VCE :
VCE VCC VE RC .IC 10 V 2,673 V 1k . 4,727mA 2,6 V

9.4.2.3. GII TCH MCH PHN CC DNG MCH THVENIN TNG NG :
Ngoi tr phng php

gii tch mch phn cc dng
cu phn p bng phng
php xc nh tng tr nhp
nh va trnh by, chng ta c
th phn tch mch phn cc
dng cu phn p bng cch
p dng nh l Thvnin.
u tin thay th mch
phn cc nn pht trong hnh
H9.46a
bng mch tng
tng Thevenin trnh by trong
hnh H9.46b.
T nt A xc nh mch
Thvenin tng ng, ta c:
HNH H 9.46
VTH
RTH
R2 .VCC
(9.28)
R1 R2
R1.R2
(9.29)
R1 R2
Sau khi thay th mch phn cc bng mch tng ng Thvnin, p dng mch tng
ng trong hnh H9.46b xc nh cc thng s khc cn li trong mch suy ra im lm vic
Q ca mch.
p dng nh lut Kirchhoff p trong mt li cc nn pht cha ngun VTH ta c:
VTH RTH.IB VBE RE .IE

V:
(9.30)
IE IC IB DC .IB IB DC 1 .IB
Suy ra:
(9.31)
VTH RTH.IB VBE RE . DC 1 .IB

Tm li:
IB
VTH VBE
RTH DC 1 .RE
(9.32)
T quan h (9.32) suy ra dng IC DC .IB , dng IE v p VCE
332
TH D 9.12:
Tnh li im lm vic ca mchin transistor cho trong th d 9.11 bng phng php p
dng mch Thvnin tng ng thay th cho mch phn cc dng cu phn p.
GII
VTH
p Thvnin tng ng:
R2 .VCC
R1 R2
5,6 k .10 V
10 k 5,6 k
3,5897 3,59 V
in tr Thvenin ti cc nn ca transistor:
RTH
R1.R2
R1 R2
10 k . 5,6 k 3,5897 3,59

10 k 5,6 k
Dng qua cc nn:
IB
VTH VBE
RTH DC 1 .RE
Dng qua cc thu:
3,59 V 0,7 V
3,59 k 100 1 .560
0,048 mA
IC DC .IB 100. 0,048 mA 4,8 mA
Dng qua cc pht: IE IC IB 4,8 mA 0,048 4,848 mA

p gia cc thu v cc nn ca transistor:
VCE VCC RC .IC RE .IE 10 1k . 4,8 mA 560 . 4,848mA 2,49 V

So snh cc kt qu tnh ton trong hai th d 9.11 v 9.12 cho thy: im lm vic c gi
tr cc thng s chnh lch rt nh c th chp nhn. Kt qu tnh ton hi t.
9.4.2.4. KHO ST TNH N NH CA MCH PHN CC DNG CU PHN P :
T phng php gii tch dng mch tng ng Thvnin, da vo cc quan h (9.30)
v (9.31) ta c:
RTH
VTH
.I VBE RE .IE
1 E
DC
IE
VTH VBE
R
TH
RE
DC 1
(9.33)
(9.34)
RTH
quan h (9.34) c vit li nh sau:
1
DC
Khi ta c RE
IE
VTH VBE
RE
(9.35)
Trong quan h (9.35) cho thy dng IE khng ph thuc vo h s DC . Nh vy khi nhit
thay i, h s DC thay i theo nhit nhng dng IE khng thay i. Nu IE IC dng IB
rt nh; mch phn cc c tnh n nh nhit v im lm vic khng ph thuc vo nhit .
333
9.4.2.5. GII TCH MCH PHN CC DNG CU PHN P CHO TRANSISTOR PNP :
Nh bit transistor pnp cn o

ngc cc tnh ca cc ngun ngoi phn
cc so vi mch phn cc ca transistor
npn. Yu cu ny c thc hin vi
ngun cung cp vo cc thu ca trsnsistor
m hn so vi im chung Gnd ca mch,
xem hnh H9.47a; hoc cp u dng
ngun p phn cc vo cc pht ca
transistor pnp, xem hnh H9.47b.
Thng thng mch phn cc cho
transistor pnp c v li theo hnh H9.48.
Phng php gii tch v c bn thc
hin tng t nh phng php
thc hin cho transistor npn. Tuy nhin
cn ch :
a./ Cc m ngun cung cp VCC
ni vo cc thu
b./ Cc dng ngun

cung cp VEE ni vo cc pht
Transistor pnp dn khi mi ni

pht nn (EB) phn cc thun. Ni khc
hn in th ti cc pht E cao hn in
th ti cc nn B; VE VB .
HNH H 9.47
Mi ni nn thu (BC) phn cc nghch, in th cc nn B cao

hn in th ti cc thu C; VB VC .
xc nh im lm vic Q cho transistor pnp, u tin chng
ta vn xc nh in tr nhp gia cc pht v nn khi nhn t ngoi vo
hai cc nn pht. Cng thc p dng tng t theo (9.20)
RIN DC .RE
(9.36)
Suy ra in tr tng ng REB gia cc pht v cc nn khi

dng cu phn p phn cc. in tr tng tng ny do in tr
R2 ghp song song vi RIN .Tng t nh quan h (9.22) ta c:
HNH H 9.48
REB
R2
R2
1
DC .RE
(9.37)
p cp vo cc nn xc nh theo quan h:
VB
R1.VEE
R1 REB
(9.38)
p t vo cc pht xc nh theo quan h:
VE VB VEB VB 0,7V
(9.39)
Dng qua cc pht xc nh theo quan h sau:
IE
VEE VE
RE
(9.40)
334
T gi tr tm c cho dng qua cc pht IE ta suy ra dng qua cc thu theo quan h:
DC
IC
.I
1 E
DC
(9.41)
Cui cng p gia cc pht v thu xc nh theo quan h sau:
VEC VE RC .IC
(9.42)
Tng t nh trng hp transistor npn, vi transistor pnp ngoi tr phng php

dng tng tr nhp nh va trnh by ta cng c th p dng phng php dng mch
tng ng Thvnin xc nh im phn cc.
TH D 9.13:
p dng phng php gii tch dng tng tr nhp tng ng ti
cc pht v cc nn nh im lm vic cho transistor pnp trong
mch phn cc dng cu phn p hnh H9.49.
GII
u tin xc nh in tr nhp ti cc cc pht v nn:
RIN DC .RE 150.1k 150 k

in tr tng ng gia hai cc pht v nn khi c thm
cu phn p:
REB
HNH H 9.49
R2
R2
1
DC .RE
10 k
10 k
1
150.1k
9,375 k
p cp vo cc nn:
VB
R1.VEE
R1 REB
22 k 10 V
7,0119 7 V
22 k 9,375 k
VE VB VEB 7 0,7 7,7 V
p t vo cc pht:
Dng qua cc pht:
IE
VEE VE
RE
10 V 7,7 V
2,3mA
1k
Dng qua cc thu:
DC
150
IC
.IE
2,3 2,284768 2,285 mA
1
150
1
DC
p gia cc cc pht thu ca transistor:
VEC VE RC .IC 7,7 V 2,2 k . 2,285 mA 2,673 V

Tm li im lm vic ca transistor pnp l: IC 2,29 mA ; VEC 2,67 V
335
TH D 9.14:
Tm li im lm vic ca transistor cho trong th d 9.13, khi p dng phng php dng
mch Thvnin thay tng ng cho cu phn p.
VEE
VEE
R2
IE
RE
VEB
VB
VEE
VE
VC
R1
VTH RTH
RE
VE
VEB
VB
IB
VC
IC
RC
RC
GII
Trong hnh H9.50 trnh by phng php
thay th cu phn p dng mch tng ng
Thvnin. in p Thvnin VTH c xc nh
theo quan h sau:
VTH
R1 R2
22 k . 10 V 6,875 V
22 k 10 k
in tr tng ng ca mch Thvnin

c xc nh theo quan h sau:
RTH
HNH H 9.50
R1.VEE
R1.R2
R1 R2
22 k . 10 k 6,875 k
22 k 10 k
p dng nh lut Kirchhoff p trong mt li cha cc cc nn pht, ta c:
VEE VTH RTH.IB VEB RB .IB

Hay
RTH
VEE VTH VEB
.I RE .IE
1 E
DC
Suy ra:
IE
VEE VTH VEB
RTH
RE
1
DC
10 V 6,875 V 0,7 V
2,425 V
2,319 mA
6,875 k
1,04553 k
1k
150 1
Dng qua cc thu:
DC
150
IC
.IE
.2,319 mA 2,304 2,3mA
1
150 1
DC
in p gia cc pht v thu c xc nh theo quan h sau:
VCE VEE RE .IE RC .IC

Suy ra:
VCE 10 V 1k . 2,319 mA 2,2 k . 2,304 mA 2,612 2,61V

Tm li im lm vic ca transistor pnp l: IC 2,3 mA ; VEC 2,61V
So snh kt qu tm c cho im lm vic ca transistor trong cc th d 9.13 v 9.14
ta nhn thy kt qu c sai lch nhng rt nh, c th chp nhn v xem nh kt qu tnh t
cc phng php trn hi t.
336
9.4.3.PHN CC CC NN (BASE BIAS):

Phng php phn cc ny thng c p dng trong cc
mch iu khin (hay li driver) cc relay in t.
Mch phn cc cc nn trnh by trong hnh H9.51. Phng
php phn cc transistor hot ng trong vng tuyn tnh c
trnh by sau y.
p dng nh lut Kirchhoff p cho mt li cha cc thu nn
ta c quan h sau:
VCC RB .IB VBE
(9.43)
Dng qua cc nn c xc nh theo quan h:

HNH H 9.51
IB
VCC VBE
RB
(9.44)
T quan h (9.44) suy ra quan h dng xc nh dng qua cc thu :
V VBE
IC DC .IB CC
.DC
R
B
(9.45)
p dng nh lut Kirchhoff p cho mt li cha cc thu pht ta c quan h sau:
VCC RC .IC VCE

Hay:
VCE VCC RC .IC
(9.46)
T quan h (9.45) cho thy dng IC ph thuc vo h s khuch i DC . Do khi

nhit thay i, h s DC thay i lm dng IC thay i tng ng; nh vy im lm vic
ca transistor thay i, mch phn cc khng n nh khi nhit mi trng thay i. Hn
na vi cc transistor c cng m s nhng do phng thc sn xut ca nh ch to, h s
DC ca cc transistor ny cng thay i trong phm vi kh rng lm nh hng n mch phn
cc. Trong qu trnh sa cha, vi mch phn cc cc nn khi thay th cc transistor b h hng,
nn iu chnh li cc in tr cho ph hp vi gi tr DC ca transistor mi dng thay th.
TH D 9.15:
Xc nh im lm vic ca transistor trong mch phn cc theo
hnh H9.52 khi nhit thay i. Bit rng khi nhit thay i, nu h
s DC tng t 85 n 100 th p VBE gim t 0,7 V n 0,6 V.
GII
Xc nh im lm vic ti lc DC 85 v VBE 0,7 V :

p dng cc quan h (9.45) v (9.46) ta c:
IC
HNH H 9.52
VCC VBE
12 V 0,7 V
.
.85 9,605 mA
1 R
DC 100 k
B
VCE
1 VCC RC .IC 12V 560 . 9,605 mA 6,62 V
337
IC
VCC VBE
12 V 0,6 V
.
.100 11,4 mA
2 R
DC 100 k
B
VCE
2 VCC RC .IC 12V 560 . 11,4 mA 5,62 V
Phn trm thay i gi tr IC khi DC tng v VBE gim do nhit thay i:
I
IC 1
C 2
IC %
IC 1
.100 11,4 9,605 .100 18,69%
9,605
Phn trm thay i gi tr VCE khi DC tng v VBE gim do nhit thay i:
V
VCE 1
CE 2
VCE %
VCE 1
.100 5,62 6,62 .100 15,11%
6,62
9.4.4.PHN CC CC PHT ( EMITTER BIAS):

Phng php phn cc
cc pht dng cc ngun dng
v ngun m phn cc.
Trong hnh H9.53, ngun
p VEE dng phn cc thun cho
mi ni nn pht.
Trong hnh H9.53a trnh
by in th ca cc cc E,B,C
ca transistor so vi im Gnd
ca mch.
Trong hnh H9.53b mch
in c v li chi tit d
dng phn tch xc nh im
lm vic cho transistor.
HNH H 9.53
p dng nh lut Kirchhoff p cho mt li cha cc nn v cc pht, ta c:
VEE VBE RB .IB RE .IE
(9.47)
Thay th quan h gia cc dng IB v IE vo (9.47) ta c:
RB
RE .IE
VEE VBE
1
DC
Hay
IE
VEE VBE
RB
RE
DC 1
(9.48)
338
Dng qua cc thu l:
DC
IC
.I
1 E
DC
p dng nh lut Kirchhoff p cho mt li cha cc thu v pht ta c quan h sau:
VCC VEE VCE RC .IC RE .IE
(9.49)
VCE VCC VEE RC .IC RE .IE
(9.50)
Suy ra:
Trong quan h (9.48) dng IE ph thuc h s DC v p VBE . Khi chn gi tr
RB
RE
, quan h (9.48) c vit li nh sau:
1
DC
V VBE
IE EE
RE
(9.51)
T quan h (9.51) cho thy dng IE c lp i vi h s khuch i DC

Hn na khi chn gi tr VEE rt ln hn so vi VBE quan h (9.51) c vit li nh sau:
IE
VEE
(9.52)
RE
RB
v VEE VBE , dng IE khng
1
DC
Tm li khi thc hin ng iu kin RE
ph thuc vo s thay i ca nhit , suy ra im lm vic n nh khi nhit thay i .

TH D 9.16:
Xc nh im lm vic ca transistor trong mch phn cc
theo hnh H9.54 khi nhit thay i. Bit rng khi nhit thay
i, nu h s DC tng t 85 n 100 th p VBE gim t 0,7 V
n 0,6 V.
GII
p dng quan h (9.48) xc nh dng IE :
IE
VEE VBE
RB
RE
DC 1
HNH H 9.54
20 V 0,7 V
100 k
10 k
85 1
1,7289 1,73mA
Dng qua cc thu l:
IC
DC
85
.IE
.1,7289 1,70885 1,71mA

1
1
85
1
DC
339
p VCE t ngang qua hai cc thu pht c xc nh theo quan h (9.50)
VCE
1 20 V 20 V 4,7 k . 1,71mA 10 k . 1,73mA 14,663 V
IE
VEE VBE
RB
RE
DC 1
IC
20 V 0,6 V
100 k
10 k
100 1
1,7652 1,765 mA
DC
100
.I
2 1 E 100 1 .1,7652 1,7477 1,748 mA

DC
VCE
2 20 V 20 V 4,7 k . 1,748 mA 10 k . 1,765mA 14,134 V
I
IC 1
C 2
IC %
IC 1
.100
1,748 1,71
.100 2,22%
1,71
V
VCE 1
CE 2
VCE %
VCE 1
.100
14,134 14,663
.100 3,61%
14,663
9.4.5.PHN CC HI TIP CC THU (COLLECTOR-FEEDBACK BIAS):

Mch phn cc hi tip cc thu trnh by trong hnh H9.55, trong
in tr cc nn c ni n cc thu thay v ni v ngun p VCC
theo mt s mch phncc khc trnh by.
Phng php hi tip ny to ra hiu ng chnh cn bng
(offsetting) duy tr n nh im lm vic Q.
Khi dng IC gia tng s to in p t ngang qua hai u in
tr RC gia tng tg ng; lm in th ti cc thu VC gim thp.
Khi in th VC gim, dn n dng IB gim ko theo IC gim.
Tm li dng IC cn bng. Qu trnh l lun ngc li tng t
HNH H 9.55
khi dng IC gim. Qu trnh gii tch mch phn cc hi tip cc thu thc
hin nh sau:
p dng nh lut Kirchhoff p ta c quan h:
VCC RC . IC IB RB .IB VBE
(9.53)
340
Thay quan h: IB
IC
va (9.53) ta c:
DC
I
VCC RC .IC RC RB . C VBE

DC
Suy ra:
.I
RC RB
VCC RC
DC
(9.54)
VBE
Tm li:
IC
VCC VBE
R RB
R C
C
DC
(9.55)
p VCE t ngang qua cc thu v pht c xc nh theo quan h:
VCC RC . IC IB VCE
(9.56)
1
VCE VCC RC . 1
.IC
DC
(9.57)
Hay:
T quan h (9.55) cho thy dng in cc thu ph thuc vo cc thng s DC v VBE .

Trong trng hp RC
IC
VCC
RC
RC RB
DC
v VCC VBE , dng in cc thu vit gn ng theo dng sau:
iu ny cho thy dng IC trong iu kin ny khng thay i khi nhit thay i.
Tm li nu mch phn cc hi tip cc thu tha cc iu kin va nu thi im lm

vic Q n nh khi nhit thay i.
TH D 9.17:
Xc nh im lm vic ca transistor trong mch phn cc
theo hnh H9.56 khi nhit thay i. Bit rng khi nhit thay
i, nu h s DC tng t 100 n 125 th p VBE gim t 0,7 V
n 0,6 V.
GII
IC 1
HNH H 9.56
VCC VBE
R RB
R C
C
DC
10 V 0,7V
10 k 100 k
10 k
100
0,769mA
341
p VCE t ngang qua cc thu v pht c xc nh theo quan h:
VCE
1
V
R
.
1
.IC 10V 10 k
CC
C
1
DC
1
. 1 100
.0,769 mA 2,233V
IC
VCC VBE
10 V 0,6V
0,864mA
10 k 100 k
RC RB
R
10 k
125
C

DC
1
1
VCE 2 VCC RC . 1
.IC 10V 10 k . 1
.0,864mA 1,29V
125
DC
I
IC 1
C 2
IC %
IC 1
.100 0,864 0,769 .100 12,35%
0,769
V
VCE 1
CE 2
VCE %
VCE 1
.100 1,29 2,233 .100 42,23%
2,233
342
BI TP CHNG 9
BI TP 9.1
Trong hnh H9.57, cho dng in IB 50 A
v p t ngang qua hai u in tr RC l 5V . Xc
nh h s DC v h s DC .
P S:
DC 100 ; DC 0,99
HNH H 9.57
BI TP 9.2
Cho mch phn cc transistor trong
hnh H9.58. Xc nh :
a./ Cc dng in IC ; IB v IE .
b. / H s khuch i DC
P S:
a./ IC 34,04 mA ; IB 702 A ; IE 34,74 mA
HNH H 9.58
b./ DC 48,49
BI TP 9.3

hnh H9.59. Xc nh :
a./ Cc in p VCE ; VBE v VCB .
b./ Transistor hot ng trong vng tuyn tnh hay
trong vng bo ha.
P S:
a./ IB 1,1mA ; IC 55,13 mA .
VCE 5,1V ; VCB 4,38 V .

HNH H 9.59
BI TP 9.4
hnh H9.60. Xc nh :
a./ Cc in p VEC ; VEB v VBC .
b./ Transistor hot ng trong vng tuyn tnh hay
trong vng bo ha .
P S:
a./ IB 85,19 A ; IC 10,65 mA .
VEC 3,85 V ; VBC 3,15 V .
HNH H 9.60
343
BI TP 9.5
Cho mch phn cc transistor trong hnh
H9.61. Xc nh cc dng in IC ; IB v IE , bit
DC 0,98 .
P S: IE 1,3 mA ; IC 1,274 mA ; IB 26 A
HNH H 9.61
BI TP 9.6
H9.62, cho DC 100 .Xc nh :
b./ Cc in p VCE ; VBE v VCB .
c./ Khi nhit gia tng, nu h s DC thay i t 100
n 150 v VBE thay i t 0,7V n 0,6 V tm IC .
HNH H 9.62
P S:
a./ IE 930 A ; IB 9,21 A ; IC 921 A
c./ IC IC
b./ VCE 10,7 V ; VCB 10 V
150
IC
100
13 A
BI TP 9.7
H9.63, cho DC 100 . Xc nh :
b./ Cc in p VEC ; VEB v VBC .
c./ Nu h s DC thay i t 100 n 150 khi nhit gia
tng, tm s thay i ca dng IC .
P S: a./ IE 1,5 mA ; IB 14,85 A ; IC 1,485 mA
b./ VEC 8,7 V ; VBC 8 V
HNH H 9.63
BI TP 9.8
Cho mch transistor trong hnh H9.64.
a./ Xc nh cc giao im ca ng ti DC
vi h trc ta ca c tuyn cc thu.
b./ Xc nh im lm vic ca transistor, bit
h s khuch i DC 50 .
c./ Nu mun phn cc li transistor vi dng
IB 20 A , ta cn chnh ngun p VBB c gi tr
bao nhiu? Tnh li im lm vic.
HNH H 9.64
344
BI TP 9.9
Cho mch transistor trong hnh H9.65, xc nh:
a./ Cc giao im ca ng ti DC vi h trc ta ca c
tuyn cc thu.
b./ im lm vic ca transistor.
P S: a./ IC SAT 20,5 mA ; VCE SAT 8 V .
b./ IC 6 mA ; VCE 5,66 V
BI TP 9.10
Cho mch transistor phn cc dng cu phn p theo
hnh H9.66.
HNH H 9.65
a./ Khi p dng phng php gii tch mch dng in tr nhn
tng ng gia cc nn v cc pht, nu mun RINbase 10.R2
th h s khuch i DC ca transistor l bao nhiu?
b./ Vi mch hin c trong hnh H9.66, khi thay in tr R2 bng
bin tr VR2 15 k , xc nh gi tr cc tiu ca VR2 lm
transistor bo ha.
c./ Theo iu kin ca cu b, khi chnh bin tr VR2 c gi tr l 2k;
HNH H 9.66
p dng cc phng php phn tch mch dng tng tr nhp v

phng php thay th tng ng Thvnin nh im lm vic
ca transistor.
BI TP 9.11
Cho mch transistor phn cc dng cu phn p theo hnh
H9.67, khi p dng phng php gii tch dng mch tng ng
Thvnin nh im lm vic, xc nh:
a./ p VTH v in tr tng ng RTH .
P S: a./ VTH 2,18 V ; RTH 11,37 k .
b./ IC 1,33 mA ; VCE 4,74 V
BI TP 9.12
HNH H 9.67
Cho mch transistor phn cc dng
cu phn p theo hnh H9.68, khi p
dng phng php gii tch dng mch tng ng Thvnin
nh im lm vic, xc nh:
a./ p VB in p gia cc nn xung im Gnd chung ca mch.

c./ Cng sut tiu tn trn transistor.
d./ Nu tng gi tr in tr RE gp 2 ln gi tr hin c, nh li im
lm vic ca transistor.
HNH H 9.68
P S: a./ VB 10,41V
b./ IC 1,56 mA ; VEC 8,3 V
c./ PD 13 mW
d./ IC 841 A ; VEC 9,53 V
345
BI TP 9.13
Cho mch transistor phn cc cc nn theo hnh H9.69, bit h
s khuch i ca transistor l DC 110 ti nhit 25oC.
a./ Tnh dng IB , IC v p VCE ti mi trng nhit 25oC.
b./ Mch transistor trn c s dng trong mi trng c nhit
thay i t 0oC n 70oC. Bit h s khuch i khuch i DC gim
50% ti 0oC v tng ln 75% ti 70oC. Gi s p VBE khng thay i
theo nhit , kho st s thay i dng IC v p VCE trong phm vi
nhit thay i t 0oC n 70oC.
P S: a./ IB 553,3 A ; IC 60,87 mA ; VCE 2,913 V
b./ Ti 0oC : IC 30,43 mA ; VCE 5,957 V
HNH H 9.69
Ti 70oC : IC 106,52 mA ; VCE 1,65 V
BI TP 9.14
Cho mch transistor phn cc cc pht theo hnh H9.70, bit
h s khuch i ca transistor l DC 100 .
a./ Tnh in th ti cc cc transistor so vi im Gnd ca mch.
b./ Gi s gi tr VBE 0,7 V cho trong u ti 25oC, khi nhit
tng ln 100oC gi tr VBE gim theo h s : 2,5 mV / o C . Nu h
s DC xem nh khng nh hng bi s thay i ca nhit , xc
nh s thay i dng IE .
c./ Khi no c th b qua nh hng s thay i DC theo nhit
trong mch phn cc cc pht.
HNH H 9.70
S:
IB 17,6 A
a./
IC 1,761mA ;
IE 1,779 mA ;
VCE 4,327V ;
HNH H 9.71
346
VB 0,387 V ; VE 1,087 V ; VC 3,24 V

BI TP 9.15
Cho mch transistor phn cc cc pht theo hnh H9.71, bit h s khuch i ca transistor
l DC 100 .
a./ Tnh in th ti cc cc transistor so vi im Gnd ca mch.
b./ Tnh cng sut tiu tn trn transistor theo iu kin ca cu a.
P S: a./ IB 149,6 A ; IC 16,455 mA ; IE 16,605 mA ;
VCE 6,766 V ; VB 1,496 V ; VE 2,196 V ; VC 4,57 V

b./ PD 111,33 mW
BI TP 9.16
Cho mch transistor phn cc cc nn c hi tip theo
hnh H9.72, xc nh:
a./ im lm vic ca transistor.
b./ in th ti cc cc transistor so vi im Gnd ca mch
c./ Tm gi tr RC gim dng IC thp xung 25%.
d./ Cng sut tiu tn trn transistor tnh theo cu a v c.
P S: a./ IB 11,7 A ; IC 1,052 mA ; VCE 1,086 V ;
b./ VB 0,7 V ; VE 0 V ; VC 1,086 V
c./ RC 2521
d./ PD 1,14 mW ; PD 0,78 mW
HNH H 9.72

KTDDT 09

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KTDDT 09

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K THUT IN IN T CHNG 9

BJT (Bipolar Junction Transistor) c to

Trong hnh H9.3, trnh by cc k hiu cho

Trong hnh H9.4 trnh by

HNH H 9.4: Cc mch phn cc transistor

Khi phn cc thun mi ni pn Nn Pht , vng ngho ti mi ni thu hp.

HNH H 9.6: Thnh phn dng in qua transistor.

i hc Bch Khoa Tp H Ch Minh Khoa in in T Phng Th Nghim My in v Thc Tp in- 2009

Nn nh gi tr dng qua cc nn IB rt nh so vi dng IC . Cc ch s dng trong cc

i hc Bch Khoa Tp H Ch Minh Khoa in in T Phng Th Nghim My in v Thc Tp in- 2009

9.1.4.CC THNG S V C TUYN CA TRANSISTORS:

H s DC cn c gi l hFE l thng s ca transistor trong mch tng ng

H s DC t c s dng hn so vi h s DC trong qu trnh tnh ton hay thit k.

Trong mch phn cc hnh H9.8, gi:

VCE : in p DC gia cc thu v cc pht.

mi ni BE phn cc thun, tng t nh diode

i hc Bch Khoa Tp H Ch Minh Khoa in in T Phng Th Nghim My in v Thc Tp in- 2009

Mc d trong cc transistor thc s, p VBE c th cao n mc 0,9 V v ph thuc vo

p dng nh lut Kirchhoff 2 cho mt li pha cc thu, ta c quan h:

VCE VCC RC IC VCC RC DC.IB

p dng quan h (9.2) suy ra dng qua cc thu l:

IC DC .IB 150 0,43 64,5 mA

p dng quan h (9.1) hay nh lut Kirchhoff 1, ta c:

IE IC IB 64,5 0,43 64,93 mA

p dng quan h (9.7) xc nh p VCE , ta c:

VCE 10 100 0,0645 3,55 V

p dng nh lut Kirchhoff2 ta c:

VCB VCE VBE 3,55 0,7 2,85 V

9.1.4.3.C TUYN CC THU CA TRANSISTOR:

p dng mch in trong hnh H9.10 xc

i hc Bch Khoa Tp H Ch Minh Khoa in in T Phng Th Nghim My in v Thc Tp in- 2009

b. Quan h gia dng IC theo p VCE khi thay i gi tr ca dng IB

a. Quan h gia dng IC theo p VCE ti mt gi tr ca dng IB

HNH H 9.11: c tuyn cc thu ca transistor

Gi s p VBB c chnh to ra gi tr IB bt k v p VCC 0 V . Ti iu kin ny

i hc Bch Khoa Tp H Ch Minh Khoa in in T Phng Th Nghim My in v Thc Tp in- 2009

HNH H 9.12: H c tuyn cc thu ca transistor

Nh trnh by trong mc trn khi dng

VCE VCC . Trong vng ngng dn cc mi ni

HNH H 9.13: Dng in r cc thu ICEO ti trng thi

9.1.4.5.VNG BO HA (CUT OFF):

Khi mi ni nn pht phn cc thun

VCE VCC RC .IC

IC tng khng ph thuc vo

Tm li khi IB v IC tng th VCE gim.

VCE SAT , mi ni nn thu bt u phn cc

ha quan h IC DC .IB khng cn duy tr chnh xc. p VCE SAT thng c xc nh ti im

VCE f IC c dng ng thng

tung ti im c ta VCE 0 ;IC

H9.15. Phm vi cn li ca ng ti DC l vng hot ng tuyn tnh ca transistor.

Gi s transistor hot ng trong vng tuyn tnh, ta c quan h sau:

IC DC .IB 50 0,23 mA 11,5 mA

VCC VCE SAT

So snh kt qu ca dng IC va tm c vi gi tr dng IC SAT ta kt lun IC IC SAT

i hc Bch Khoa Tp H Ch Minh Khoa in in T Phng Th Nghim My in v Thc Tp in- 2009

9.1.4.7.NH HNG NHIT LN H S KHUCH I DNG DC :

HNH H 9.17: nh hng ca nhit ln h s khuch i DC DC

DC min mc d gi tr cc i v cc gi tr mu ca DC i khi cng c cp n trong cc

Tch s ca VCE v IC khng c vt qu mc cng sut tiu tn cc i cho php

PD max v cc gi tr VCE v IC khng th t gi tr ti a cng lc.

i hc Bch Khoa Tp H Ch Minh Khoa in in T Phng Th Nghim My in v Thc Tp in- 2009

Xc nh gi tr ti a cho php ca ngun

hn cho php. Thng s no s vt gi tr cho