SEMICONDUCTOR

2N3904U

TECHNICAL DATA

EPITAXIAL PLANAR NPN TRANSISTOR

GENERAL PURPOSE APPLICATION.

SWITCHING APPLICATION.
E
B

FEATURES
Low Leakage Current

D
3

: ICEX=50nA(Max.), IBL=50nA(Max.)

@VCE=30V, VEB=3V.
Excellent DC Current Gain Linearity.
Low Saturation Voltage
H

: VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA.

Low Collector Output Capacitance

: Cob=4pF(Max.) @VCB=5V.

DIM
A
B
C

MILLIMETERS
_ 0.20
2.00 +
_ 0.15
1.25 +
_ 0.10
0.90 +

D
E

0.3+0.10/-0.05
_ 0.20
2.10 +

G
H

0.65
0.15+0.1/-0.06

1.30

0.00-0.10
0.70
_ 0.10
0.42 +

L
M
N

0.10 MIN

Complementary to 2N3906U.
1. EMITTER
2. BASE
3. COLLECTOR

MAXIMUM RATING (Ta=25)

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector-Base Voltage

VCBO

60

Collector-Emitter Voltage

VCEO

40

Emitter-Base Voltage

VEBO

Collector Current

IC

200

mA

Base Current

IB

50

mA

PC *

100

mW

Tj

150

Tstg

-55150

Collector Power Dissipation

Junction Temperature
Storage Temperature Range

2001. 12. 4

Revision No : 2

USM

Marking

Type Name

ZC

1/4

2N3904U
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

ICEX

VCE=30V, VEB=3V

50

nA

Base Cut-off Current

IBL

VCE=30V, VEB=3V

50

nA

Collector-Base Breakdown Voltage

V(BR)CBO

IC=10A, IE=0

60

Collector-Emitter Breakdown Voltage *

V(BR)CEO

IC=1mA, IB=0

40

Emitter-Base Breakdown Voltage

V(BR)EBO

IE=10
A, IC=0

6.0

hFE(1)

VCE=1V, IC=0.1mA

40

hFE(2)

VCE=1V, IC=1mA

70

hFE(3)

VCE=1V, IC=10mA

100

300

hFE(4)

VCE=1V, IC=50mA

60

hFE(5)

VCE=1V, IC=100mA

30

VCE(sat)1

IC=10mA, IB=1mA

0.2

VCE(sat)2

IC=50mA, IB=5mA

0.3

VBE(sat)1

IC=10mA, IB=1mA

0.65

0.85

VBE(sat)2

IC=50mA, IB=5mA

0.95

300

MHz

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

fT

Transition Frequency

VCE=20V, IC=10mA, f=100MHz

Collector Output Capacitance

Cob

VCB=5V, IE=0, f=1MHz

4.0

pF

Input Capacitance

Cib

VBE=0.5V, IC=0, f=1MHz

8.0

pF

Input Impedance

hie

1.0

10

Voltage Feedback Ratio

hre

0.5

8.0

x10-4

Small-Signal Current Gain

hfe

100

400

Collector Output Admittance

hoe

1.0

40

Noise Figure

NF

5.0

dB

35

35

VCE=10V, IC=1mA, f=1kHz

VCE=5V, IC=0.1mA Rg=1k,

f=10Hz15.7kHz

Delay Time

10k

V in

300ns

Rise Time

tr

10.9V

275

Vout

td

C Total< 4pF

VCC =3.0V
0
t r ,t f < 1ns, Du=2%

-0.5V

Switching Time

nS

Storage Time

tstg

10k

V in

1N916
or equiv.

Fall Time

tf

20s

275

Vout

VCC =3.0V

10.9V
-9.1V

C Total< 4pF

200

50

0
t r ,t f < 1ns, Du=2%

* Pulse Test : Pulse Width300

S, Duty Cycle2%.

2001. 12. 4

Revision No : 2

2/4

2N3904U

I C - V CE

h FE - I C

100

DC CURRENT GAIN h FE

Ta=25 C

COLLECTOR CURRENT I C (mA)

1k

0.9
0.8

COMMON EMITTER

0.7
0.6
0.5

80

0.4

60

0.3

40

COMMON EMITTER
VCE =1V

500
Ta=125 C

300

Ta=25 C
Ta=-55 C

100
50
30

0.2

10
0.1

I B =0.1mA

20

0.3

10

30

100

300

COLLECTOR CURRENT I C (mA)

0
0

COLLECTOR-EMITTER VOLTAGE V CE (V)

COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (V)

V CE(sat) - I C
1

COMMON EMITTER
I C /I B =10

0.5
0.3

Ta=125 C

0.1
0.05

Ta=25 C
Ta=-55 C

0.03

0.01
0.1

0.3

10

30

100

300

COLLECTOR CURRENT I C (mA)

I C - V BE
200
VCE =1V

160

V BE(sat) - I C
BASE-EMITTER SATURATION
VOLTAGE VBE(sat) (V)

10
120

80

Ta=
125
C
Ta=25
C
Ta=-55
C

COLLECTOR CURRENT I C (mA)

COMMON EMITTER

40

Ta=-55 C

1
0.5

Ta=25 C

0.3

Ta=125 C

0.1
0

0.4

0.8

1.2

BASE-EMITTER VOLTAGE V BE

2001. 12. 4

COMMON EMITTER
I C /I E =10

Revision No : 2

1.6
(V)

0.1

0.3

10

30

100

300

COLLECTOR CURRENT I C (mA)

3/4

VCE - I B

Cob - VCB , C ib - V EB

1.0

COMMON
EMITTER
Ta=25 C

0
0.001

10
C ib

5
3

C ob

1
0.5

0.01

0.1

BASE CURRENT I B (mA)

2001. 12. 4

CAPACITANCE C ob (pF)
C ib (pF)

0.4
0.2

f=1MHz
Ta=25 C

30

I C =100mA

0.6

I C =30mA

0.8

I C =10mA

50
I C =1mA

COLLECTOR-EMITTER VOLTAGE VCE (V)

2N3904U

Revision No : 2

10

0.1

0.3

10

30

REVERSE VOLTAGE V CB (V)

V EB (V)

4/4

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