13–20th January 2010

Hall Effect & Measurement of Hall Coefficient

Harsh Purwar (07MS-76)
Piyush Pushkar (07MS-33)
Amit Nag (07MS-19)
Sibhasish Banerjee (07MS-55)
VI th Semester, Integrated M.S.
Indian Institute of Science Education and Research, Kolkata

Experiment No. 1
Condensed Matter Physics (PH – 314)

Abstract: In this experiment Hall’s Effect was studied/observed and various parameters
like Hall’s coefficient, carrier density, mobility etc were measured/calculated. The
experiment was done for two types of semi-conductor crystals of Germanium (Ge) {3833
& 3911}, one having electrons as the majority charge carrier and other holes. The
dependence of Hall voltage on the magnetic field and the current passing through the
probe is also studied.

Introduction
Hall Effect is a phenomenon that occurs in a conductor carrying a current when it is placed in a magnetic
field perpendicular to the current. The charge carriers in the conductor become deflected by the magnetic
field and give rise to an electric field (Hall Field) that is perpendicular to both the current and magnetic
field. If the current density, 𝐽𝑥 , is along 𝑥 and the magnetic field, 𝐵, is along 𝑧, then Hall field, 𝐸𝑦 , is either
along +𝑦 or – 𝑦 depending on the polarity of the charge carriers in the material (conductor). It was E. H.
Hall who first observed the above mentioned event in 1879 (1).
Hall Effect is the basis of many practical applications and devices such as magnetic field measurements,
and position and motion detectors. Also, Hall Effect measurement is a useful technique for characterizing
the electrical transport properties of metals and semiconductors. Hall Effect sensors are readily used in
various sensors such as rotating speed sensors, fluid flow sensors, current sensors, and pressure sensors.
Other applications may be found in some electric airsoft guns and on the triggers of electropneumatic
paintball guns, as well as current smart phones, and some global positioning systems.

Theory
As mentioned earlier, the reason for existence of Hall Field in 𝑦 direction is because of charge
accumulation caused by Lorentz forces on movement of charge carriers. In equilibrium this transverse Hall
Field, 𝐸𝑦 , will balance the Lorentz force and current will flow only in the 𝑥 – direction. From the Drude
theory of conduction it is obvious that applied electric field, 𝐸𝑥 , and the current density, 𝐽𝑥 , should be
related as,
𝐸𝑥 = 𝜌(𝐻𝑧 ). 𝐽𝑥
where 𝜌 𝐻𝑧 is the magneto-resistance which is field independent. And also, for the transverse
field, 𝐸𝑦 , which balances the Lorentz force, one might expect it to be proportional to both the applied
magnetic field, 𝐻𝑧 , and current density, 𝐽𝑥 , as,

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 13–20th January 2010
𝐸𝑦 = 𝑅𝐻 . 𝐻𝑧 . 𝐽𝑥
here, 𝑅𝐻 is called as the Hall coefficient which is negative for negative charge carriers and vice
versa. In the presence of electric field, 𝐸𝑥 and 𝐸𝑦 and magnetic field, 𝐻𝑧 , the equation of motion of a
negative charge carrier can be written as,
𝑑𝑝 𝑝 𝑝
= −𝑒 𝐸 + ×𝐻 −
𝑑𝑡 𝑚𝑐 𝜏

In steady state the current is independent of time, and

therefore 𝑝𝑥 and 𝑝𝑦 will satisfy,
𝑝
−𝑒𝐸𝑥 − 𝜔𝑐 . 𝑝𝑦 − 𝜏𝑥 = 0
𝑝𝑦
−𝑒𝐸𝑦 − 𝜔𝑐 . 𝑝𝑥 − 𝜏
=0
where
𝑒𝐻
𝜔𝑐 =
𝑚𝑐
Now applying 𝑝𝑦 = 0 and 𝐽 = −(𝑛𝑒/𝑚). 𝑝 we get, Figure 1: Schematic diagram showing
𝐸𝑦 1 various fields acting on a p-type
𝑅𝐻 = =− semiconductor crystal attached to the
𝐽𝑥 . 𝐵𝑧 𝑛𝑒𝑐
It asserts that the Hall coefficient depends on no parameters of probe.
the metal except the density of charge carriers (2).

Sample Details
 For n-type Germanium (Ge) crystal
o Thickness 𝑧 : 5 × 10−2 𝑐𝑚
o Resistivity 𝜌 : 10 Ω𝑐𝑚
o Conductivity 𝜎 : 10 𝐶𝑉 −1 𝑠 −1 𝑚−1

 For p-type Germanium (Ge) crystal

o Thickness 𝑧 : 5 × 10−2 𝑐𝑚
o Resistivity 𝜌 : 10 Ω𝑐𝑚
o Conductivity 𝜎 : 10 𝐶𝑉 −1 𝑠 −1 𝑚−1

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 13–20th January 2010
Experimental Procedure
Calibration of the Magnetic field with current
The magnetic field produced by the electromagnets was calibrated with the current flowing through it
using an Indium Arsenide Hall probe for measuring magnetic field and an ammeter for measuring current.
The following protocol was implemented in order.
1. The constant current power supply (DPS - ***) connected to the electromagnet (EMU - ***) and
digital gauss-meter (DGM – 102) connected to the indium arsenide Hall probe were switched on
after making appropriate connections.
2. The indium arsenide hall probe was covered with the metallic sheath and was placed away from the
electromagnet and other apparatuses.
3. The digital gauss-meter was set at 1x and
the reading was adjusted to zero using the
zero adjustment knob of the gauss-meter.
4. The probe was then uncovered and placed
at the center of the two electromagnets
with the help of a wooden stand. Figure 2: The two electromagnets; Hall probe is placed in
5. The current through the electromagnet was between two of them.
slowly increased via constant current power
supply and corresponding magnetic field readings displayed by the digital gauss-meter were noted
and are listed in Table 1.
NOTE: The current supplied by the power supplies should never be increased or decreased rapidly. It may
lead to electric shocks and burn the apparatuses.

Dependence of Hall Voltage on Magnetic Field

The Hall voltage across the semiconductor (probe) was measured varying the magnetic field around it and
keeping the current through the probe constant. The following protocol was implemented.
 Appropriate connections in Hall Effect set-up (DHE – 21) consisting of a constant current power
supply and a digital milli-voltmeter were made and the apparatus was switched on. The widthwise
contacts of the Hall probe were connected to the terminal marked ‘voltage’ and lengthwise
contacts to the terminal marked ‘current’ as shown in the figure.
 The current flowing through the probe was set to a fixed value say 3 mA.
 The Hall probe was then placed away from the magnetic field and the Hall voltage was set close to
zero by aligning the contact pins properly.
 The magnetic field was then switched on and the Hall voltage was noted varying the current flowing
through the electromagnet slowly, say in steps of 0.2 amperes.
Above was repeated for 2 different probes and for 3 values of probe current 𝐼 for each of the two probes
as listed below in Table 2-7.

Dependence of Hall Voltage on Current through the Hall Probe

In this part of the experiment we vary the current through the Hall probe or 𝐽𝑥 and see its impact on the
Hall voltage keeping the probe in a constant magnetic field. The following protocol was implemented.
 The current through the electromagnet was fixed to some value say 1.0 ampere. This fixes the
magnetic field around the coil.
 Placing the Hall probe in between the two electromagnets as mentioned earlier, the current
through it was varied and the corresponding Hall voltage was noted.
Above was repeated for 2 different probes and for 3 values of magnetic field 𝐻 for each of the two
probes as listed below in Table 8-13.

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 13–20th January 2010
Observation / Graphs
Table 1: For calibrating Magnetic field (H) through the coil.

Current Magnetic Field

Obs. No.
(I) {Ampere} (H) {Gauss}
1 0.00 73
2 0.11 292
3 0.23 506
4 0.34 712
5 0.46 933
6 0.53 1077
7 0.61 1245
8 0.70 1425
9 0.84 1688
10 0.97 1966
11 1.04 2100
12 1.11 2240
13 1.21 2460
14 1.30 2630
15 1.42 2890
16 1.52 3090
17 1.62 3300
18 1.70 3470
19 1.82 3710
20 2.00 4070
21 2.22 4470
22 2.35 4770
23 2.42 4900
24 2.52 5080
25 2.62 5280
26 2.73 5470
27 2.83 5640
28 2.91 5770
29 3.02 5950
30 3.16 6150
31 3.23 6240
32 3.33 6360
33 3.46 6510
34 3.59 6650
35 3.66 6720

Above data was plotted and fitted linearly. Last four data points corresponding to the high currents were
excluded during fitting.

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 13–20th January 2010

Plot 1: Calibration of magnetic field (H) with current (I).

Table 2: Measurement of Hall voltage developed across the probe – 1 (3833) by varying magnetic field, for
constant current of 2.99 mA passing through it.

Obs. Current through the Magnetic Field {H} Hall Voltage {VH} Hall Coefficient {R}
No. Electromagnet (A) (Gauss) (mV) (m3/C)
1 0.00 74 -1.7 -0.0383
2 0.20 467 -5.6 -0.0200
3 0.40 860 -9.2 -0.0179
4 0.62 1292 -13.7 -0.0177
5 0.83 1704 -17.4 -0.0171
6 1.03 2097 -21.2 -0.0169
7 1.21 2451 -24.4 -0.0166
8 1.40 2824 -27.5 -0.0163
9 1.62 3256 -30.7 -0.0158
10 1.83 3668 -33.7 -0.0154
11 2.02 4042 -36.3 -0.0150
12 2.18 4356 -38.4 -0.0147
13 2.41 4808 -40.9 -0.0142
14 2.60 5181 -43.3 -0.0140
15 2.80 5574 -45.5 -0.0137
16 3.00 5966 -47.0 -0.0132
17 3.21 6379 -48.8 -0.0128
18 3.42 6791 -50.5 -0.0124
19 3.59 7125 -51.4 -0.0121
20 3.80 7538 -52.7 -0.0117

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 13–20th January 2010
Table 3: Measurement of Hall voltage developed across the probe – 1 (3833) by varying magnetic field, for
constant current of 5.00 mA passing through it.

Obs. Current through the Magnetic Field {H} Hall Voltage {VH} Hall Coefficient {R}
No. Electromagnet (A) (Gauss) (mV) (m3/C)
1 0.00 74 -2.5 -0.0336
2 0.19 447 -8.6 -0.0192
3 0.39 840 -14.7 -0.0175
4 0.59 1233 -21.1 -0.0171
5 0.81 1665 -28.3 -0.0170
6 0.99 2019 -33.7 -0.0167
7 1.20 2431 -40.2 -0.0165
8 1.39 2804 -45.1 -0.0161
9 1.60 3217 -50.7 -0.0158
10 1.80 3610 -55.4 -0.0153
11 2.00 4002 -60.3 -0.0151
12 2.20 4395 -64.2 -0.0146
13 2.40 4788 -68.1 -0.0142
14 2.61 5200 -72.2 -0.0139
15 2.78 5534 -75.0 -0.0136
16 3.02 6006 -78.8 -0.0131
17 3.21 6379 -81.5 -0.0128
18 3.41 6772 -83.9 -0.0124
19 3.61 7164 -86.3 -0.0120
20 3.82 7577 -88.1 -0.0116

Table 4: Measurement of Hall voltage developed across the probe – 1 (3833) by varying magnetic field, for
constant current of 7.99 mA passing through it.

Obs. Current through the Magnetic Field {H} Hall Voltage {VH} Hall Coefficient {R}
No. Electromagnet (A) (Gauss) (mV) (m3/C)
1 0.00 74 -0.5 -0.0042
2 0.20 467 -10.0 -0.0134
3 0.39 840 -20.7 -0.0154
4 0.59 1233 -31.1 -0.0158
5 0.81 1665 -42.0 -0.0158
6 0.99 2019 -52.0 -0.0161
7 1.20 2431 -62.5 -0.0161
8 1.39 2804 -70.5 -0.0157
9 1.60 3217 -78.9 -0.0153
10 1.80 3610 -87.6 -0.0152
11 2.00 4002 -94.4 -0.0148
12 2.20 4395 -101.1 -0.0144
13 2.40 4788 -107.8 -0.0141
14 2.61 5200 -113.7 -0.0137
15 2.78 5534 -120.1 -0.0136
16 3.02 6006 -125.6 -0.0131
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 13–20th January 2010
17 3.21 6379 -129.3 -0.0127
18 3.41 6772 -133.4 -0.0123
19 3.61 7164 -136.9 -0.0120
20 3.82 7577 -140.0 -0.0116

Plot 2: Variation of Hall Voltage with Magnetic field for different values of probe current for probe- 1.

Table 5: Measurement of Hall voltage developed across the probe – 2 (3911) by varying magnetic field, for
constant current of 3.00 mA passing through it.

Obs. Current through the Magnetic Field {H} Hall Voltage {VH} Hall Coefficient {R}
No. Electromagnet (A) (Gauss) (mV) (m3/C)
1 0.00 74 2.6 0.0583
2 0.25 565 7.6 0.0224
3 0.46 978 12 0.0205
4 0.65 1351 16.2 0.0200
5 0.90 1842 21.7 0.0196
6 1.10 2235 25.8 0.0192
7 1.25 2529 29.0 0.0191
8 1.43 2883 32.5 0.0188
9 1.66 3335 37.1 0.0185
10 1.82 3649 40.1 0.0183
11 2.01 4022 43.5 0.0180
12 2.28 4552 48.2 0.0176
13 2.48 4945 51.3 0.0173
14 2.64 5259 53.5 0.0170
15 2.81 5593 56.4 0.0168
16 3.07 6104 58.2 0.0159

7|Hall Effect
 13–20th January 2010

Table 6: Measurement of Hall voltage developed across the probe – 2 (3911) by varying magnetic field, for
constant current of 5.00 mA passing through it.

Obs. Current through the Magnetic Field {H} Hall Voltage {VH} Hall Coefficient {R}
No. Electromagnet (A) (Gauss) (mV) (m3/C)
1 0.00 74 4.4 0.0592
2 0.23 526 12.1 0.0230
3 0.41 880 17.9 0.0204
4 0.62 1292 25.4 0.0197
5 0.81 1665 32.3 0.0194
6 0.95 1940 37.3 0.0192
7 1.15 2333 44.1 0.0189
8 1.37 2765 51.7 0.0187
9 1.61 3236 59.8 0.0185
10 1.83 3668 66.7 0.0182
11 2.11 4218 74.9 0.0178
12 2.32 4631 80.7 0.0174
13 2.51 5004 85.6 0.0171
14 2.71 5397 90.0 0.0167
15 2.91 5790 93.6 0.0162
16 3.08 6123 96.3 0.0157

Table 7: Measurement of Hall voltage developed across the probe – 2 (3911) by varying magnetic field, for
constant current of 7.98 mA passing through it.

Obs. Current through the Magnetic Field {H} Hall Voltage {VH} Hall Coefficient {R}
No. Electromagnet (A) (Gauss) (mV) (m3/C)
1 0.00 74 7.6 0.0641
2 0.21 487 17.8 0.0229
3 0.37 801 26.7 0.0209
4 0.61 1272 39.9 0.0196
5 0.81 1665 52.5 0.0198
6 1.04 2117 64.0 0.0189
7 1.20 2431 73.4 0.0189
8 1.40 2824 83.2 0.0185
9 1.62 3256 94.8 0.0163
10 1.82 3649 104.9 0.0180
11 2.02 4042 114.6 0.0178
12 2.21 4415 123.0 0.0175
13 2.43 4847 131.9 0.0171
14 2.59 5161 137.8 0.0167
15 2.85 5672 145.6 0.0161
16 3.05 6065 150.7 0.0156

8|Hall Effect
 13–20th January 2010

Plot 3: Variation of Hall Voltage with Magnetic field for different values of probe current for probe - 2.

Table 8: Measurement of Hall voltage developed across the probe – 1 (3833) by varying current passing
through it, for constant magnetic field of 2038 Gauss corresponding to 1.00 ampere of current through the
electromagnet.

Current through the Hall Probe {I} Hall Voltage {VH} Hall Coefficient {R}
Obs. No.
(mA) (mV) (m3/C)
1 0.12 -1.1 -0.0225
2 0.6 -5.3 -0.0217
3 0.9 -8.0 -0.0218
4 1.2 -11.0 -0.0225
5 1.64 -14.6 -0.0218
6 2.1 -18.7 -0.0218
7 2.62 -23.3 -0.0218
8 3.1 -27.6 -0.0218
9 3.62 -32.2 -0.0218
10 4.14 -36.7 -0.0217
11 4.74 -41.9 -0.0217
12 5.55 -48.8 -0.0216
13 6.22 -54.5 -0.0215
14 7.04 -61.4 -0.0214
15 7.56 -65.7 -0.0213
16 8.23 -71.2 -0.0212
17 8.65 -74.6 -0.0212
18 9.1 -78.2 -0.0211

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 13–20th January 2010
19 9.6 -82.3 -0.0210
20 10.22 -87.3 -0.0210
21 10.7 -91.1 -0.0209
22 11.15 -94.6 -0.0208
23 11.85 -99.8 -0.0207
24 12.24 -102.8 -0.0206
25 12.74 -106.4 -0.0205
26 13.19 -109.7 -0.0204
27 13.81 -114.2 -0.0203
28 14.37 -118.0 -0.0201
29 15.01 -121.7 -0.0199

Table 9: Measurement of Hall voltage developed across the probe – 1 (3833) by varying current passing
through it, for constant magnetic field of 4002 Gauss corresponding to 2.00 amperes of current through the
electromagnet.

Current through the Hall probe {I} Hall Voltage {VH} Hall Coefficient {R}
Obs. No.
(mA) (mV) (m3/C)
1 0.12 -1.8 -0.0187
2 1.08 -15.7 -0.0182
3 2.02 -29.4 -0.0182
4 3.04 -44.2 -0.0182
5 4.04 -58.9 -0.0182
6 5.08 -73.7 -0.0058
7 6.01 -87.0 -0.0181
8 7.08 -102.0 -0.0180
9 8.08 -116.0 -0.0179
10 9.14 -130.4 -0.0178
11 10.08 -143.3 -0.0178
12 11.06 -156.0 -0.0176
13 12.14 -170.0 -0.0175
14 13.1 -182.0 -0.0174
15 14.1 -194.4 -0.0172

Table 10: Measurement of Hall voltage developed across the probe – 1 (3833) by varying current passing
through it, for constant magnetic field of 5966 Gauss corresponding to 3.00 amperes of current through the
electromagnet.

Current through the Hall probe {I} Hall Voltage {VH} Hall Coefficient {R}
Obs. No.
(mA) (mV) (m3/C)
1 0.12 -2.2 -0.0154
2 1.04 -18.8 -0.0151
3 2.04 -36.9 -0.0152
4 3.14 -56.6 -0.0151
5 3.94 -70.9 -0.0151
6 5.08 -91.2 -0.0150

10 | H a l l E f f e c t
 13–20th January 2010
7 6.07 -108.7 -0.0150
8 7.11 -126.8 -0.0149
9 8.18 -143.6 -0.0147
10 9.15 -160.0 -0.0147
11 10.12 -176.0 -0.0146
12 10.94 -189.7 -0.0145

Plot 4: Variation of Hall voltage with current passing through it, for different values of magnetic field for probe - 1.

Table 11: Measurement of Hall voltage developed across the probe – 2 (3911) by varying current passing
through it, for constant magnetic field of 2038 Gauss corresponding to 1.00 ampere of current through the
electromagnet.

Current through the Hall probe {I} Hall Voltage {VH} Hall Coefficient {R}
Obs. No.
(mA) (mV) (m3/C)
1 0.12 1.1 0.0225
2 1.56 13.3 0.0209
3 2.17 18.5 0.0209
4 3.15 26.7 0.0208
5 3.89 32.8 0.0207
6 4.74 39.8 0.0206
7 5.13 43 0.0206
8 5.92 49.3 0.0204
9 6.59 54.6 0.0203
10 7.34 60.5 0.0202
11 8.2 67.1 0.0201

11 | H a l l E f f e c t
 13–20th January 2010
12 9.15 74.3 0.0199
13 10.15 81.8 0.0198
14 11.26 90 0.0196
15 12.33 97.4 0.0194
16 13.12 103 0.0193
17 14.28 110.9 0.0191
18 15.33 118.1 0.0189
19 16.65 126.8 0.0187
20 17.57 132.3 0.0185
21 18.71 138.6 0.0182
22 19.78 144.6 0.0179

Table 12: Measurement of Hall voltage developed across the probe – 2 (3911) by varying current passing
through it, for constant magnetic field of 4002 Gauss corresponding to 2.00 amperes of current through the
electromagnet.

Current through the Hall probe {I} Hall Voltage {VH} Hall Coefficient {R}
Obs. No.
(mA) (mV) (m3/C)
1 0.12 2 0.0208
2 0.82 12.8 0.0195
3 1.46 22.6 0.0193
4 2.11 32.7 0.0194
5 2.6 40.1 0.0193
6 3.11 47.8 0.0074
7 3.94 60.2 0.0191
8 4.52 69 0.0191
9 5.38 81.7 0.0190
10 5.86 88.6 0.0189
11 6.15 92.7 0.0188
12 6.74 101.2 0.0188
13 7.21 107.8 0.0187
14 7.8 116.3 0.0186
15 8.5 126 0.0185
16 9.02 133 0.0184
17 9.49 139.5 0.0184
18 10.03 146.9 0.0183

Table 13: Measurement of Hall voltage developed across the probe – 2 (3911) by varying current passing
through it, for constant magnetic field of 5907 Gauss corresponding to 2.97 amperes of current through the
electromagnet.

Current through the Hall probe {I} Hall Voltage {VH} Hall Coefficient {R}
Obs. No.
(mA) (mV) (m3/C)
1 0.12 2.5 0.0176
2 1.04 20.8 0.0169
3 1.35 26.9 0.0169

12 | H a l l E f f e c t
 13–20th January 2010
4 2.2 43.7 0.0168
5 2.77 54.8 0.0167
6 3.15 62.2 0.0167
7 3.94 77.4 0.0166
8 4.28 83.9 0.0166
9 4.75 93 0.0166
10 5.31 103.5 0.0165
11 5.66 110.1 0.0165
12 6.43 124.2 0.0163
13 7 134.8 0.0163
14 7.78 148.9 0.0162
15 8.48 161.4 0.0161
16 9.07 171.9 0.0160
17 9.28 175.5 0.0160
18 9.88 186.1 0.0159

Plot 5: Variation of Hall voltage with current passing through it, for different values of magnetic field for probe - 2.

13 | H a l l E f f e c t
 13–20th January 2010
Calculations
As mentioned above in the theory section, that,
𝐸𝑦 𝜇𝐸𝑥 𝜇 1
𝑅 = = = =
𝐽𝑥 𝐻 𝐽𝑥 𝜎 𝑛𝑒
where 𝜇 is mobility of the charge carriers and 𝜎 is the conductivity. 𝑛 is the negative carrier density.

Hence for fixed magnetic field and fixed input current, the Hall voltage is proportional to 1 𝑛. It follows
that,
𝑅
𝜇=
𝜎
Calculation of Hall Coefficient 𝑹 :
The Hall coefficient 𝑅 or 𝑅𝐻 has already been calculated for the two types of Germanium (Ge) semi-
conductor crystals in the tables above. As mentioned Hall’s coefficient depends only on the number
density or carrier density therefore we can collect all the data and find out a collective mean and standard
deviation.
For Ge semi-conductor probe – 1 (3833):
Mean Hall coefficient: −0.0171 𝑚3 𝐶
Standard deviation: 0.0042

For Ge semi-conductor probe – 2 (3911):

Mean Hall coefficient: 0.0197 𝑚3 /𝐶
Standard deviation: 0.0072

Calculation of carrier density 𝒏 :

For Ge semi-conductor probe – 1 (3833):
1
𝑛=
𝑅𝑒
1
⟹ 𝑛1 =
−0.0171 × −1.6 × 10−19

𝒏𝟏 = 𝟑. 𝟔𝟓 × 𝟏𝟎𝟐𝟎 𝒎−𝟑

Similarly, for Ge semi-conductor probe – 2 (3911):

1
𝑛2 =
0.0197 × 1.6 × 10−19

𝒏𝟐 = 𝟑. 𝟏𝟕 × 𝟏𝟎𝟐𝟎 𝒎−𝟑

Calculation of carrier mobility 𝝁 :

For Ge semi-conductor probe – 1 (3833):
𝜇 = 𝑅𝜎
⟹ 𝜇1 = 0.0171 × 10
𝝁𝟏 = 𝟎. 𝟏𝟕𝟏 𝒎𝟐 𝑽−𝟏 𝒔−𝟏

For Ge semi-conductor probe – 2 (3911):

𝜇2 = 0.0197 × 10
𝝁𝟐 = 𝟎. 𝟏𝟗𝟕 𝒎𝟐 𝑽−𝟏 𝒔−𝟏

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Inference
 The Hall voltage depends on the magnetic field and the current flowing through the probe.
 The Hall coefficient whereas, is independent of these two factors and depends only upon the
density of the charge carriers.
 The two probes,
 Probe – 1 (3833): n-type semiconductor
 Probe – 2 (3911): p-type semiconductor
 The measured/calculated Hall coefficient for the two given probes,
 Probe – 1 (3833) = −0.0171 ± 0.0042 𝑚3 /𝐶
 Probe – 2 (3911) = 0.0197 ± 0.0072 𝑚3 /𝐶
 Using the above result we also calculated the charge carrier density and carrier mobility for the two
probes which are found to be,
 Carrier density for Probe – 1 (3833) = 3.65 × 1020 𝑚−3
 Carrier density for Probe – 2 (3911) = 3.17 × 1020 𝑚−3

 Carrier mobility for Probe – 1 (3833) = 0.171 𝑚2 𝑉 −1 𝑠 −1

 Carrier mobility for Probe – 2 (3911) = 0.197 𝑚2 𝑉 −1 𝑠 −1

Sources of Error
The following may account for the errors associated with this experiment.
 Due to temperature fluctuation thermo – EMF and corresponding heating – current are generated.
Hence these affect the reading of Hall voltage.
 The calibration of the magnetic field with current is done at 10x scale for larger values of current.
Thus errors creep in due to measurement in this scale.
 When the hall probe is inserted manually the probe may be relatively tilted with the axis of
magnetic field coils.
 The contact pins on the semiconductor surface should be adjusted properly to completely remove
the zero error in Hall voltage or should be noted and taken care of.

References
1. On a new action of the magnet on electric currents. Hall, E.H. 3, 1879, American Journal of Mathematics,
Vol. 2, pp. 287-292.
2. Ashcroft, Neil W. and Mermin, N. David. [ed.] Dorothy Garbose Crane. Solid State Physics. s.l. : Harcourt
College Publishers, 1976.
3. Department of Physics, Indian Institute of Science Education & Research, Kolkata. Roorkee : Scientific
Equipment & Services. User's Manual.

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