Ge Semiconductor Data Handbook 1977

tor nook }HOW TO USE THIS BOOK IF THE DEVICE TYPE NUMBER IS KNOWN Look up the number in the /ndex. Either the exact General Electric type or a suggested replacement type will be shown. The page number of the referenced Specification Sheet | is also indicated, and going to that page will provide you detailed information. Listings are numeric-alpha, by columa, IF THE GENERAL APPLICATION IS KNOWN Refer to the Selector Guide for an overview of devices available and select one of more types to fit your application. Then refer back to the Index to obtain the page ‘number of the detailed Specification Sheets a os wend I GENERAL €@ ELECTRICsssumed for Inescuracies. The suggested replocemants in tis catalog represont what ‘Squialents forthe product sted and in most inrtaneas ave exact repiacaments, However, Spd. does not guarantee that the replacement are exact, but only that the replacements wal moot the tems of IS fe publishes written product warranties. The pertinent GE product specification sheets should be used a8 th Copyright © 1977 General Electric Company Semiconductor Products Department Electronics Park Syracuse, N.Y. 13201 USA,@ Semiconductor Data Handbook Third Edition‘The semiconductor devicss and arrangements diclosd herein may be covered by patents of General Electric Company Grothers, Neither the diselonare ch any information hersin nor the ole of semiconductor devies by General Elacie Company conveys any license under patent cleims covering combinations of semiconductor devices with other devices fr alomante, in the absance of an express, written agreement 10 the contrary, General Elecrie Company osumes no Tapitty for patent infringement arising out of any use oF the semiconductor devs with other cevices oF elements bby any purchaser of semiconductor devices or othersCONTENTS PAGE INDEX & INTERCHANGEABILITY INDEX (NUMERIC-ALPHA ORDER) SELECTOR GUIDES Silicon Signal Transistors. Silicon Power Transistors Signal Diodes. . Tunnel Diodes Unijunctions, Switches and Triggers Optoelectronics Rectifiers SCR’s cee Heat Exchangers for Rectifiers and SCR's Assemblies, Modules and Stacks Triaes oe GE-MOV™ Varistors. Power Modules. Subseretes™ Military and Hi-Reliability Types . Hardware . Technical Publications . Semiconductor Symbols GE-OEM Sales Offices SPECIFICATION SHEETS (USE INDEX FOR EXACT PAGE) 1s 2N's 3N, aN Industry Types.MANUFACTURER'S CODES ‘Ameleo Semiconductors ‘American Micra Semiconductors ‘Advanced Micro Devices ‘Amaerex Electronic Corp. Atlante Semiconductor, Ine Cena Lab Gare (OM, Ine Diodes, Ine Electronics Component Corp. Unis Corp. dal Industries Electronic Devices, Ine. Electe-Nuclear Labs Societe European Oe Semiconductors, France errant Lt. England Fairchild Semiconductor General Instruments General Semiconductors, Ine Mai, Ine Hewett Packard Co Hunt Semiconductors Hution Semiconductors International Racttir Ines Industro Transistor Corp. KMC Semizonduetor Corp. tronix ‘Lucas, England Meesushita, Japan Micro Electronics, Hong Keng Microtemizonductor Corp. Miero State ‘Mitsubishi, Japan Monsanto C2 Mose Motorals Semiconductor Products, ne. Micro Systems, IMs Transistor Coro. National Electonics Nippon Electronic, Jepan National Semiconductor Corp. Opeos, ne. Optron, Ine Philo: Ford Corp Phgo Electronics, Ine Pressy, Lid Power Physics Power Semiconductor, tne. Li Radiotechniaue, France Raytheon Co. RCA/Electronies Components Rectifier Components Sarkes Tartion Semigon, Ine Semtck Core ‘Servex Semiconductor Division, Australia Societa Generale Semiconductors, Italy Siemens, W. Germany Signeties Silicon General Silicon Transistor Corp, Salitron Davies, ne Spectronics, Ine. Sperry Gyroscape Co. ‘Sprogue ‘Solid State Product, Ine. Silicon Transistor Corp. Syhania Electric Products, Ine. Syntron Transistor AG, Switzerland “Transitron Electronic Corp. Texas Instruments Ine “Torhibe, Japan TRW Semiconductor Division “Teledyne Semiconductors Unitrade Corp. Unser, toe United Page, ne. vo, Ine Varacyne Wertinghoute Electric Corp. The suggested replacements represent what we believe 10 be equivalents for the products listed. GE assumes no responsibility and does not guarantee that the replacements are exact, but only that the replacements will meet the terms of its applicable published written product warranties. The pertinent GE product specification sheets should be used as the key tool for actual replacements.‘Suggested GE ‘Suggested GE | topes Spastscoment wie [Pod ine [Pe] toe Thee [we] rote [Pel how [ase] Ben espe IK gas fe et 2 ie eee (HN. gE ie eae Ras 8 EG ae 9 eo oe a ibe a G fiee He 8 BSE ee RE cae | Ee Ee hae @ Ee ear gg fi g aan ie oT 8 eae 2 EE ie ie pues 2 Ee ae FiBae 2 Ee fee GB 8 a Ee ise aise ie 2 En ie ES Bf Pe ag gue g ee ie tee ee ie pee ig ie Eeee ge aE & Bou afi 2 Ee \@ee 8 gee 8 ge ae ee 2 Bue‘Suggested GE ‘Suggested GE nabscomert napocoment ‘iowa [rene [os| Type [Pow Wig[ Patt [reel Tyne [Poe] hans Beno | SE $iG DIODE Mae STORM BIS GE Se Blooe at 0g RES ce g Bee me 0g Rupe ag Sea mie a Bee | Maree & Senne iar" Senne Enh nn ed inn nr ine 35 ES ei a Ea fee Bt Bee Hey gE BL hig eo Se & He # Ge Rerns Bi West Sch wen Hee = we i Eee = Be 2 Ee es we € GE sf He a ame a we fxs ce = Be cee = Es te Se a we aa, ne 8 P's Ee ae ig Bs | 2s ae Eee Ean ae ie Eth 8 ie ma ig pee a ae Bree eeSeagesied GE [ Sienna Ge] nopiecanet menacoment wio]Pros.tne [Pee] Toe [Pow | [Tope pat rs te w) ee ee i ai He ae fans ey | ao ea i a2 « " a8 ge ae gue a fe ee eae : = a ae Se ee a Ae ey ies a Gk ie Mi jie Elle 7 eee : zu “ee eee cae | ey ie 2 ae z on pti ; te QSuggested GE adtecoment Wee [a] rttine” [roel ive [Poe ae = 2 8 a2 ge Rony "pus ong | RED ae ue OU a8 ) |e g ein N23 GE SCR ae, a ee a8 co ae m8 mm 48 a ae Bed fam a 8 RR lee ae na a % | a = caus 3 | Bee ae aa g Ee ae a ae 3 eh mae i. iaisse pwr taay Sig Tan es2008 129) an An mus 1B hase PA TAN Bia at He Fy ae aw ig ae au ae ia 10‘Suggested GE Suggested GE tapiscoment replacement Type ‘Mig.| Prod. 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aust mz is aa oe ae at Ei a Ane ie ae Ane ER fas 0 ie eae ett aE Tit ie HE Take Be Sas eae Gk a ae a a # ie ee[ Sosgested GE | Soggested CE Replacement Replacement Mig,|Prod.Line [Page| Type [Page Tye [Mia] Prod tine [Pege| Type | Paoe ie mae Keon a es, © ‘a ee The Sediowe 393 eae a i 783 Tee Tae Seas a Site & i Teal Te Tae a sp Ede Sea | a Bee 2 a Tee ane seis tsp eeu ae 783 ie Bae ee Pa 3 te mae esos 8 ei & en a He ime Be ae = i g Em BB Be & a aS 3 ae a g ie as HH ees a if g TEE Hae Be eae & ee eae Bl) lee ge an tha a razgvico Eugen BN TRE ie eh & i es He | [diem geo Fi a Mle Ele sn cae ig BN oe Bi i EBB le sen ce ume = 2 Biase a8 aa a8 a8 te 6g ig ae ce, ER a 8 ! a if aoe a ie @ i Etansiout & ee ef cee Git ce set cueece = GE goh es a ear ee Se Sch Aika ser a a a & i & Ste a 8 #8 3 | a8 a 8 g a ge a a gg es a ig ge | € 8 oan a ae aan & ee cre sn fasion Geen gge € 2 cus € i gs & Es | Bana SE Be son # Es jean gt aes fe SOON GRRL ee i ee ee eh ee Sth ete @ ea % en eg g 8 sf ; eit #8 ee a EXtan1200 Ries sen ae PH Enienras0 ta eeh & 3th 3 eit Stk eth 33) ee #8 ¢ = SRP ay See a ee 2‘Suggested GE | maaan Tooe [race [a Wio[ rode [roel Te [Pe He 6g ge we 8 a8 fae 2 8 ae aM @ ae 8 gs fuses = @ ae ae ne a8 He og a8 fee og a8 abe @ i a8 ae ga a8 a8 a 28 a a8 a8 Se Sch & z& ik 28 a8 ig | a8 ge a8 ge if 28 ge a8 a8 £8 #8 Sch & is a @ ge a8 es es a a fe a8 23—— Toes nr | Twos [Poe [hom a aes 2Suggested GE Soaapied GF manoconet ‘asiamest ‘ios [ws] tre [Pes toe [Poe a ioe C384RT200 GE HeneL sca 7 a 8 om 8 ae aes ae 2 8 | ae ane A fe EA ve Bg a8 He aa | Re gee ge ee aie ae He g8 eee ae cation Se stn ceotn ce Sta ge ee ie pas ie ae %| Biceoied OE ] Semana GF nauicanent aime wi [Pod te [Pom] ire [Poe] [Tose [wo] rte [Pe a8 aay ae ap ae pa as Ae gee | i Et ge age a2 gee wt gk eee ge gg Be ae ages | ae ame me a get He Ze a Oe Ee ge; HE Z5 ger; ast a8 cH i ef ae HH a8 a Be ia ah 6 gu Bag BE oe eee Hg at a ae WE el tee ae 68 a ee ae | chines: GE SCR S102N RL SCR ae & wen | fae ge a & | [ge a a & eee wae Se eee | ee oe we oo OE Ba : S& 88 He as gai = seat ia ete ele = ae eae 26Sia [Sosposied GE] : satin Tyee Mtg] Prod. 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Line Type [Pave ‘Type Mig] Prod.tine [Page| Tye [Pose ¢ ag we 2 es cn ct a as ae 2 oe @ Bre € mane He a as € an {ae € But aah Ee @ Rae # Bes @ Gt a Rial a Rane 2 Bis i ae Hebe ¢ ae a ae a Beet = Ataeik & 2 St g 2 a @ @ aa @ Ge Ava Teat SE Bn than a et a pam a BRS a RA a ara @ mam g a ae g ¢ Ge g 2 HS 28Signed GE] Sooqaied “ae Tenscoraet_| : ned wis] Prdtine [Pos] Toe ome] [Tape [Wa] Pedtne [Po] Tne Troe a oe |e go ey gay 8 a gee a 238, 8 ae shite i o Bey GR a a mec i eer aie a gu 8 $iG olooe nie se 38 yan Ba} Bu ae Oe 2 is Ap a El See g Eke Hu nn Ae ee 2 oe 2 ae ge Be ed an & geen | ie. eet g Bis SC Pro cout Mi as20 gege222 Ge SiG TRAN geen |e ge g Bist i ERs |e as Ee eoeae UAE en zgeer =| [HAE gem |g @ ppae | |LAE gee | gee ge | EE fells i oe ce ee g a aay 0g Bas g a cE eS aa og Bat a alae ee 0g BRS th Ee fe ag aun Ene 2[ Sgees SE eaecent wi [a w_ [Fae ave ioe [we] Pa tno [roel Tne [Pa i me Eee ae ae a 8 Reg SaeRe a Hasso Sera count ox @ masa Sen BE @ sie Be a Geek ae oe ie Be kes ig eae, a fen | ig 2 SE grrdcount 313 : ineecs @ sR Bs e eeah a He Hs 8 a gum ge i 3 a Gi, if tek 8 rae ie 8 a 8 eee me} ess ue oo meg ce He ie ie BH lesa ik ee ie ee ik iarra30 for aac iscasso8 mm Stn Hnaee6 farrede Hot TAG fsczesos men rao egg aR fee ie Ea ie ae Ea 2g Ee mg Fae if Es‘Suggested GE ied GE aslacement replecement Tee ia | rove [Poel Tove ig] Prod tne [Page| Type [ooe Ba Bae ey mie eh Ea t2 we me fae Pa as fot gs a 2 HM, Ee ® fe meee eve EF ie dee ge = af tn aes ig a lhe ine a as AMIN Ie SE TUNNEL BO a [7 HAG, ELS Be a BSH, 8 EEE at we sugy erent 15218 Hur Sea TANINSI0.8- Ge Recririen ee ae a2. ite e ge a tee ae at ie an at a iar & fee, ee ao inwoe e BB Re fg ae me me fg GERM Be at ae i, it ms Hike, heme his ome TRueEe @ Be 3[ Sasser] Saeed 8 ebocamen scene Tse [os] tne [Pale [Poe | [ow [i eine Pon Te Eee Be Gee ee ee aie” & eee ee Ea a See, 2 Sa el RS eas ee 2 Gal Bee ga a8 ieee @ at BP ae ey |) | atewut 2 sug ues, is / TGR gE Sg Baae tacros Nor Tae ce re |e be gy Re aes ee wee ie a ta 9 ae ee ta 4 ad Seis ae ime & & eee ieee, gi wg tae fee 2 tine ee fee i ite sitreanees Se Sch Mer tae Eelesee eee ae . eae 2 Bee Eat ee] ug ge seo ae eas se oe ee Hae ee ie = ual in a ge met eet BE a ee Be OES See SE Ooo see cast fro. opr cour. ae me OR greg a eae! ea i ee ve, | mt et tiger i Newors Mor on jaca a Ee BAR es ce ee) |e BP Ee mies alate 7 MERIT 88 Mor Seq Eide 8) 32Suggested GE | ‘Suggested GE ropiecanent | faplocoment Tee wis] Prs.tine [Pa] Tipe ‘ie [te] Pde [Poe| Troe Ss: 8B a= B fre, cay i fe B ge 3 eS Eee ile ae fen OB En ee fast eS aes tee Ba ‘ awe aa ue mame 4 fe Hae ee ae i Eee | Be Bae te Ast fa pee fee ae ea BB a fd Ee fe |S EB fae ara ee i Hai An gg ume 2 | ups a fe eee | [HES Ee OB eos oe | HER Feiss tar Se met | | uaite mae Be g aie ER Bl cba § | |EES aa tam gl as eames og | [uae pan fel Be By) eae ane et a a aoe‘Suggested GE ‘Suggested GE wenccomat aiaman Tee Yaa Peatnw [ome] tive [roo] [Two [wa] rsitine [Foe| type [Poot oe eae fe) [ga au ie make a ee Po ane aS | TERR ue Bear aa a eee a | (Beg BES a a ee zat a ee ae Bae a tees ae | | Hage a oe iat ee et i arias Fi i Fr at weak Hang veer igre Bis BER Be Se Be EASE Ue ee BARRE Be Eien oe Ses meee EE So BAe ut are aug mat He Ee so ant weet SE Setnay tases Pun TaN ee i, maine ae a ae eg ay fet ime a oe “ges e, ae Eee Bad : ie ae ne ee ou ges (Re Bg Ba aoe Ge Bane eet g ES ne OU Een € But eee a @ ie fe OB ee eee uk oe eae aeSuggested GE ‘Suggested GE | roslcanent napacemer tues Ta Tie [ee [we [roa tro [roel Tape NUTT NAT SCR meted Sea ttn ue OU =a = EA ie 6B aa = ae 2 NAT SCR Scr fe g Ge a oS ca g Be RE et 2 nh WaT Sc Meets ae 7 ae Rie Mat Sm Pa OMe as 3 pee aS ie = NCISEN mar Sea steee? Scr iB ee a mucasc MAT sce a meas MA Se Nees seh NCE NAT SCR Nese co NLG3SG NAT SCR Nee; sce NCC NAT SCR wees’ Scr i fe ie 7 ee oe 7 a mae a See g te Ue = NLC3ES NAT SCR See NLCITA NAT SCR See ee nS a fe , NAT. SCR. ime ae fen oe ae eae eee ee ag | Bei Se iB ae | ea gee 8 i Ba een BS 35‘Suggested GE [Suggested Ge sanccanat easiest ‘Type Mig.| Prod.Line | Page| Type [ype Mig] Prod.Line [Page| Type See eee = er Se Og Rees Pe ne a aa ze eee : Sch Jcazaexry UT TRIAC /sc2460 a ea een a oe be Scr Hur TRAC sc2460 = a = He 8 ee we a = Ee ae a es an Ben ie ae ee ha oe ee i ee ee ee = ny = a Be ee roe fae ee ed a Ee a eae a =e a ee a at a eet ee aur ies BEE Hm Hele ae = ieee ties ite Pee = a bs hie feat Site Fe ‘TCE TRAC $c2418 ans 2 ae eo —— = ai Eitan a on ae Frozs Fane wee TRAE i ie a. BS ee = Le ie Ed Se | ae ae = Ss fe bes cont Be stor ome me ress EAA TRAN olga Tee TRiAe ae ge 2 ae ee ie ee a Hie a Oe 36‘Suggested GE Replacement [ive wae Ssolen, soit se an ae, L et SEdooxras Sag Benas senso" See seitebxras 52500 sczso02 Set ee ees ee vas Ea Eee Seteouares Sebiote ope BES aes face fan esr meer wer Ret we ae oe ee gee EH we wi TraN Ret una [ Suosested “GE | Replacement‘Suggested GE sanaconent Ten wea toe[ Po Toe te I me 68 ES OER aes He OE B Ee EB eet me 6 ES me UE Ee Be a ee Be ER Es Ea me OE Be Oe et eee Be RE me UE B 7 He OER me GB 7 OE He OG Hi Be OE UE ee Be UES ie UE Ed ae reg Ek i =e a 6 lee me 6 pe oe ete eek =e ae ae Og Be one ie me Et es le He Ok i Se Be | EB iE = 6 28 38Suaoeiod GF] Suonate GE tebiscomert apacement Type ‘Mtg.| Prod. 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SOA 26 SOMA SA wesa708 Boma, 6 5 2 SOMA, 06 W0mA, Sma wP53702 [ieesest MPSS705. [wpssroe- ‘Me56512 S651 [wesesi3— “ars “NPS6516 ‘Soma 2 Bs 109A, Bma S705. ‘Soma, 2 fo S00mA, Sma PSI7O2 2mA10. an 208.10. —wpsest7 2A. 10 ~wP56519 | 2m 10 = a “e10 16030 S16 2ma 10 Mesesie 108SILICON SIGNAL LOW NOISE AMPLIFIERS 10-98 PACKAGE (Wi MincMtax, @lewVoe VI lab) Zhosee Mew 35 Bapgoo| [BAG so Vee Swipes sOHml Rie GR BWSTETOIT ONE TERE 2N3eaa 30-9870 | BmAS 102 \Wog= IOV. Ig= mAs BO, BWeTOORHE eae | | 23644, 3 | 3570 | dmAS 8S Veg= 10V-Ic mA. Ate 20, ewe LOOKER i 30 | 80:120 | amas 102 Vee=1OVIC= IMAI 30020 | amas 8S Vee= HOV IGe Device Type Conditions 250500 | amAS 5.0 Veg BV, 1¢~ 100A, Fy SK, BWA 15:7Kiz. (= 10H to TB IKHE | 2was00, 18 | 23901 18 0700 | ImAS 50 Vog= BV;Ig= 1OWA, Ri. SROGW Is RHE f= 1OHe Vo HeOKHE jasszsen NON) 50 aeOmIO' | amas | 50 Megs SVLIC™ IOWA Ate: Se OW CIEoRiC Sate te 2nsaeon npw’ 50 opm | amas 30 ver vite soma ate 5K, OW = 15.7KHe, = 10H to 1B.TRH: 2N5I06A NPN 25 7K70K | QmA5 50 0OWA, Fe= 160K, BW 15.7KHs, = 10H 0 TOKHE 2Nsa08_NeN TK70K | amA.5 5:0 Vee BY, 'e~ 600A, F,~ 160K, BW 15.7, 4~ 10He to }2N5309 MeN 16020 | 104A 8 4.0 “Veer BVLIc> 2uA, l= SKLW= IB 7KHE fannie 25310 NPN $0800 | 10WA 5 3.0 Vee BV. ier 2A Rae SKC BW te 7KHE TO IRH 2NS311 NPN Ben800 | 1K 20 Veg SVi lem OWA, Raz SK, BW <8 9RHG t= FRE SILICON SIGNAL LOW NOISE AMPLIFIERS 10-92 PACKAGE BVce0 hee NF (W) MinMax. @ ic, Vee tv) tab) [Sessaz7a NeW <0) ae0-800 Voce = BY, Ig 10008, Rg = BREW AIB IRE IGESSE2EA NPN 0 400-800, Nee = 8V. t= 1008 Rg~ SKEW = 16 7KH Ges6000 NEN 25 | 400-300 ¥ Wee =9V. le = TOA R= BK: BW 38: ptte JSescoo1 PNB 23 100-300 Ver = 3V.1g=100uA, Fe = GK/BW18.7KH IGes6008 NPN. 100-300 Vee = SV. ig = 100K8, Rs'- BK, 8W= 35.7KHe GES6005 | PNP 100-300 Vee ~ BV; = 10QUA; Rs =| 5k BW = 18.7k Ke ISES6010 NEW 100-300 Vee * BV; Ie 100yA, Re = IGes6oi1 PNP 100.300 Vee = BV: le > 100A, Fr = GES6OI4 NPN 1100-300 4 Yce~SV.(g=100NA, Re = SKI BW= 1E.7KHE Ges6015 PNP 100-300 Veer BV. lg= 100A, Re = 5K. BW = 15.7KHe asl ISES020° NPN ‘60-120 Noe" BV.ic" 10uA; Rs ~ 10K BW 18.7kHs, = 10H 0 tok ‘SESO30_ (NPN 100-300 Vice 7 SV/16~ QUA, Rs = 10K. BW" = 18 7KHe, 5 ~ 10s te YOKE ISESS9068 NPN 770K. ce = BY; tc = 600UA, Fg = 160K, BW 16:7kHe 1 = 10H to 10K IGESSS088 NPN TRI0K ce ~ 8V.1e = 600WA, Ra, 160K, BW = 16:7K He, f= Tole 46 OK [omer Te Condition: ses 0x Vee * 80.2 s0tuh ne too € =) qi Hoses)" Rew Sx NEETEVi tec toonn Re fooce 2 MOR aeseio New aoc Vee 6ViIeo toon he cain weptve fenpertires. Je tow actors ent i ewe nae catia TUNNEL DIODES GENERAL PURPOSEBACK DIODES GENFRAL PURPOSE TUNNEL DIODES ULTRA HIGH-SPEED SWITCHING BACK DIODES MICROWAVE 122UNIJUNCTIONS, TRIGGERS AND SWITCHES ‘Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de- veloping an extensive line of negative resistance threshold and four-ayer switch deviees. Each of these devices can ‘be used as a power thyristor trigger, and each offers a special advantage fora particular trigger function, In addtion, fe2ch can be used for various non-rigger applications, ‘The features—both in design and characteristics —which you receive with these products are concisely defined for ‘each series: TYPES CONVENTIONAL UNIJUNCTIONS 2N489-494 proved reliability, MIL spec version 2N2646-47—Iow cost, proved hermetic sealed device, PROGRAMMABLE UNIJUNCTION TRANSISTOR (PUT)—variable threshold, ow cost, fast switching speed, and circuit adjustable electrical characteristics. COMPLEMENTARY UNUJUNCTION TRANSISTOR—uitimstein temperature stability for timing and oscilator applications. SILICON UNILATERAL SWITCH (SUS)—» stable fked low voltge threshold, low cost, high performance “aslayer diode. SILICON BILATERAL SWITCH (SBS)—low voltage triac trigger, two silicon unilateral switches connected back to back. SILICON CONTROLLED SWITCH (SCS)—high Wagering sensitivity, ead capability for mutiple loads or 2510 35 an aT = noe nore ELECTRICAL SPECIFICATIONS [VOLTAGE RANGE: eo aor oe oe a 7 VOLTAGE TYPES Rept Fes Frsard nd Ren Vola ‘gl e|a) 8 (8) 8/88) PACKAGE OUTLINE NO.63 TO 190 AMPERES a se0EC ELECTRICAL SPECIFICATIONS VOLTAGE RANGE FORWARO CONDUCTION Trav Seen gear re eT hae Saag ont ne ya nonin ‘VOLTAGE Tres | | 2) 8/2/8)/s)2/3/8)s]ale/eiala/a/s|s PACKAGE TYPE, ‘PACKAGE OUTLINE HO. 20 utPHASE CONTROL SCR's 235 TO 850 AMPERES (Coe Tyre ‘ELECTRICAL SPECIFICATIONS ‘VOLTAGE RANGE. FORWARD CONDUCTION. Trews Min, RMS On State Carne TA srtaay Mam arin ne crt @ 130" fan Trois ask one ey, Pape ee irs Svan ta TT MSE for foo or Se 83 mine ea Yim Ganiscton med aut ‘nl hr a esc Minciorie baa Pow) Tobe ar 7 tag Fvpal wren ie we) 0a Rate afr wrvecion ern (ios "Fy Jonatonopesingtamperstre ene CET LOCKING vias ~ IRIN. eae eae ae Ta oie Von Bisse ata Waar VT ‘or Saas a, aun eon ae VOLTAGE TYPES Repstve Pak Forward and Revere VoToat 70. 00 700 0 300 500 170 7160 00 PACKAGE TYPE ‘PACKAGE OUTLINE NOL 20 142 1 Tae FE 776 era 2S s02PN eat 185PHASE CONTROL SCR’s 940 TO 1950 AMPERES ELECTRICAL SPECIFICATIONS Cyourace mance ri hor Sa 143INVERTER SCR’s SELECTOR GUIDE : 3 i 5 i, CRO area, Tae “Gre 308 500 S00 700 800 B80 900 1000 Ted ao SSOR's in this use category are characterized for turnoff time (commutation speed) capability and other speed char- ‘teristics. When designing for speed, the parameter trade offs must be carefully weighed. Thus the large matrix af speed, current and voltage capability for Inverter SCR’s, As the name implies, major applications for these devices fare DCJAC Inverters. Additionally, they are used in cycioconverters and. other pulse applications requiring high Speed capability. 144g INVERTER SCR's 25 TO 35 AMPERES GE TWP <8 C234, cas CIS C1a acta 2iis640-65_anaeee se ELECTRICAL SPECIFICATIONS (WouTace Rance FORWARD CONDUCTION es ce me ‘Max. AIMS on-state currant @ Te = 65°C, 50% duty (Al TRH SKHE TOKHe trams) Max peak one evel, non Topetitve surge current (Al Mas 1 for Tus @ STS, (A? G20) ‘Griical rateotvse of ontate carat set lume) Tj Junction operating temperature range (6) BLOCKING im, ial vate ow of atta ed Von aim RAAT FIRING Tor RAR tauired pas current to Wiager maT ose Tao eo _25°6 ‘ax, required voliogs to Wager (WT mae 40°C e256 ‘in, required voltage t wigger (VI ooo eusc VOLTAGE TYPES. Repetitive Peak For CHSBET 6138620 ciseMi0 138020 148oe INVERTER SCR’s S & 63 TO 270 AMPERES mane See ane Manges REFS Bare AWAIT A consrvcrion crttien ovitben MENS MERINO Make “Maura” Maat anne ELECTRICAL re (HOURS RaNGE a a ER oe RRB 6] FORWARO CONOUETION Trin raed esi ma ie cal noo PO Tea roe ie Svinte 00s pp ‘Sra c eas ae Ee Eee wane TAT ‘VOLTAGE TvPes Rapti ok Fob and Resa Vane racnae We PACKAGE OUTLINE NO. 148INVERTER SCR’s 275 TO 400 AMPERES (eevee ‘creareies era oat ‘Gaus casas ease] [AMPLIFYING AMPLIFYING AMPLIFYING AMPLIFYING AMPLIFYING AMPLIFYING constauCTION ‘care ‘oare sare raare ear ‘care ELECTRICAL SPECIFICATIONS VOLTAGE RANGE 108 00.800 700-1300 FORWARD CONDUCTION ronwsr Qiice ooe So satya ac 3 ao ‘Simon a500 56 e000 “Typical wenn time sel Turm-off dine @ raed volts ond TV 80 vote min sel © 20 ij rappe [9 700V/ime repped (© 200V use repping ‘titel ate olan of on wn aT en Ta netion aerating tmparaure range PC) ‘BLOCKING Min. eritcal att in offare ‘éiét ottage exponen! toratad Vane She Te ye FIRING Max vor Bape" erase ‘VOLTAGE TYPES eetitve Pek Forward and Revere Valine [PACKAGE TYPE PRESSPAR [PACKAGE OUTLINE WO. 780 147INVERTER SCR's 500 TO 700 AMPERES GETE caer cae am ce oa 88 omstaecrion! ‘caTE! ‘GATE! ‘cate ELECTRICAL SPECIFICATIONS (vourace nance FORWARD CONDUCTION Trimm) MEX fOtward conduction sowsial oc ec, SOS duty A 8 B00 He 1200 ie 2500 He 2 5000 Hr 38 GV, So TOP aT ‘curanr (a i fr Tia Yor Sve OT mae ‘Max ternal impedence COD “Typ tron tie se “Tuigoft ue @ ad voles ond to BUSTY 20 iuime repo (00V/jwerewppled ‘8 200V/ise osptnd ‘ried tf of on ate ts Saronic! "Ty netion operating trpperatare ange CC) ‘suocKing Mi, eal reat i off uide—ottanesxponmmicl to rated URN Sion Ts Fis Fini Ta Tax reguird te erent oer pat Var Miser vole Wiper V7 or ot aord oT2eC Wn) VOLTAGE TPES. Repetitive Peak Forward and Reve Votan g|8)z)g)g/8|8|3l3 aa PACKAGE TPE TPRESSPAR ‘PACKAGE OUTLINE WO. 6 148 “AMPLIFYING AMPLIFYING AMPLIFYING “AMPLIFYING AMPLIFYING AMPLIFYING ‘care "aare ‘GATE sa ae NT 70 ‘0 26 180, 7500) 730,000 6 2 20 = ‘00 oa Ta > 7 300 is 5 is Tage HRC T PRESS AR TPRESSPAR[Ge TvPE INVERTER SCR’s 700 TO 1000 AMPERES oo C396 caaaicaas Gaavicaa caso CONSTRUCTION [VouTAGE RANGE ELECTRICAL SPECIFICATIONS FORWARD CONDUCTION ‘AMPLIFYING AMPLIFYING AMPLIFYING AMPLIFYING” AMPLIFYING GATE 00-60) ‘GATE. ToRso0 (GATE! Toe 00. care Gare 506-1200 SOTO] Ore ‘rimnas) MOX forward conduction sinusoid 0 Te 65°C, 50% duty (A) ‘300 00H ©1200 He ‘© 2500 He 900 900 200 ‘©5000 He ‘sts ‘Max. peak one cycle, noneepetiive sures eutrent (Al 10,000 (AP seh Max. 7 for fusing for Bt0 8.3 mane “415,000 ‘Max. thermal impedance G/WT me “Typical turn-on time (dane) 20 Turn-off dine @ rated vot Ty Vn = SOV min see 26 me reapplied ‘@ Z00V/ see reapplied {© 400V/ see reapplied 2 Gra Critical ‘200 00 BLOCKING dvidt voltage FIRING lor e128 Yor Man. 7) (V/tisee) TZ Junction operating tempera torated Vonm Max, required voltage to wager (VI “ee ager (VP 200 Max, required gate currant to tigger (mA) oe rs PCT an TE =a0 10 128°C AO 125°C. 200 400 786 5 —ad we TFS" _—aD Tw HOBO ‘VOLTAGE TYPES © 125°CiMin.) 1 Repetitive Peak Forward and Reverse Volioos GaeR GaaaiCeasA 7200 300 ‘00 Gao58 ed 3080 Casitas Gaaaicaase ‘caaaicaas “exes caaaicuase Caa7icaase e395 casarcaas (c2a7/c4aan 700 300 (caa7/caaes (caavicaaan 900 caa/caasT caaTicaaa CaaTIcaaPA 71200 1300 caaricaaar a 71400. 7500 7600 700 7200, [PACKAGE TYPE PACKAGE OUTLINE NO. 149 TTTINVERTER SCR's 700 TO 1500 AMPERES ana Saat 150HEAT EXCHANGER MODULES for HIGH CURRENT RECTIFIERS & SCRs e9/c10/9N221/3N222 ELL DATA "100" CONDUCTION, LIGUID COOLED AT °C {1 GPM Jectino, MAL VOLTS SINGLE | AVG. CURRENT Pen CELL [RNS CURRENT Fon SwTcH PERCELL SURGE AweS|| “asicra/crS | ‘G9/GI0/INZ21/aN222 i 7,000 7 10,000 151L qa Vv b ° g SYNLVIONSAWON SOINPOW 4299 JUELND UBIH *g on 182a || Vv L Vv g SYNLVIONSWON S2INPOW UEUIND YBIH »g LuNIPEYWy HOS vive 183ATH TRIAC SELECTOR GUIDE pene A) cg wiry ( EEBBOSCESTIE ee: |e (hermetic merat TRIAC TRIGGERS The ST2 (diac) is 2 silicon bi-directional diode which may be used for triggering triacs or SCR's. It has a three layer structure with negative resistance switching characteristics in both directions ‘The ST4 is an asymmetrical AC trigger integrated circuit for use in triac phase control applications. This device reduites the snap-on effects that ave bresent in conventional tigger circuits by gliminating contol circuit hystersis. This Performance is possible with a-single RC time constant where as @ symmetrical circult of eomparable performance would Fequire at least three more passive components, 154TRIACS — ENCAPSULATED PACKAGE f POWER GLAST PASSIVATED PELLETS wan v2 i Ielels eeeeiee | 156Be asl TRIACS q HERMETIC en PACKAGES POWER GLAS™ PASSIVATED PELLETS ra or PRESS-FIT ELECTRICAL SPECIFICATIONS —_ Vom Ravetitie Prak OF-Sute VoRage fon FesaGc te +100 ov scaone —_sczesise __seze08 | sc2e0/18 a0 7 Se2asiod e280 so20010_ soov —isemaise ——sc2ssice— sezearie scasone —~ sczssne TT seaorin—sczssie 7 sezeoiiee season sezasiane 15 158 138 CURRENT CHARACTERISTICS Tyas) Max. RMS On Sate Curent ( TTeimiax MX, Ca Temperature at Rated AMS Corrne Ch for Nomtaoisted Stud/Pre ae Taoated Stud/Non tolated TO.3 Flonoe \ Taolated 703 Flange Tra Bs Pt ove ren Reprive Sa Max. OC Holding Currant (made ete 28 oTe= we Max. BC Latehing Garni faded OTe =425'C _MIZ+ Gawe | = MT2— Gate ‘MT2= Gate = axockiie aa a Siac Wa Rated Vora vidt Gite Open Creu (Visscl rating 18 Ric Von (o.B4h yipyey Alban, Girevived [Viste ‘TRIGGERING — Max. Required DC Gate Gurrent lor forTngger, M20 Gates, Mrz" Gate, © Vo™ 12 Vac" | vor Wrggen neta Gew sy MT2~ Gove 2Vp "12a @ Ten 125°C 25, 25 28 28 25 35, 36 gees 38 ese WECHANICAL SPECIFICATIONS PACKAGE OUTLINE NUMBER HAUSE ESC EAE SO, m SCsesiey Seistaig Seiseain Seistztos 156PCs A cs From General Electric New Transient Protection Manual New 112 page manual combines in one Copies are available from any authorized GE Publication theory, knowledge and experience _ distributor, GE OEM Electronic Components relating to transient cause, detection and Sales Office, or by sending $2.50 plus Protection accumulated by General Electric applicable tax to General Electric, scientists and engineers...includes a ‘Semiconductor Products Department, comprehensive selection guide and product Electronics Park, Bldg. 7-49, Syracuse, New specification sheets for determining the York 13201 optimum GE-MOV™ Varistor. 187 TUNIIITGenerat symmetrical resistors which perform in a manner similar 10 back and offer advantages in performance and economics. When exposed pedance low conducting value thus clamping the transient voltage ‘to a safe level. The dangerous energy of the incoming high voltage protecting voltage sensittive circuit components, GE-MOV™ VARISTORS Electric zine oxide varistors are voltage dependent, ‘o-back zener diodes in circuit protective functions to high energy voltage transients, the varistor im: changes from a very high standby value to a very pulse is absorbed by the GE-MOV® varistor, thus EV Ossillograph (Actual Photo} 1 SELECTOR GUIDE Determine maximum (steady-state) voltage appearing across the varistor when no transients are present, Include ‘any high line conditions that may occur. For example: 117VRMS-10% high line = 129V RMS. Locate voltage on horizontal seale, Drop down to appropriate GE-MOV™ varistor series (.e., MA, L and PA series). Locate level of energy transient on the leftmost vertical scale. Match with series determined in Step No. 1 Example: 129VAMS, 20 Jovies (L. and PA series). For unknown energy level, estimate by type of application: Less than 20 Amps. max. transient current, stored energy is low (e., relay contact protection). Or if varistor js placed after @ transient-absorbing component (i.e., transformer, inductor, capacitor), then the MA series (1.7 Joules) is @ good choice. For higher peak pulse current requirements, check the ZA, L, or PA series, ‘depending on voltage, After energy and applied voltage level considerations, average power dissipation needs must be considered. For infrequent transients (once/hour, once/day}, any series is adequate. For frequent transients, or where rigid mounting is required, use the PA series, For specific selection, refer to individual spec sheets and application ‘Woules) leNency|oissiparion| AVERAGE MAXIMUM STEADY-STATE APPLIED VOLTAGE POWER. [VOLTS — AC Fa 130 go 238290 sp sono 58 p00 tans) |VOUTS — 3G eee MA SERIES Ea Ye2ee Vas PERK 23.388 Vor PULSE [CURRENT 10208, MAX. ZA SERIES: Bi fons VAMS EAR, purse I! 14.1183 VOC JCURRENT 250.5008 ce BF aoe ree APR PULSE izes ere Noe [CURRENT400A 20008, MAX. PASERIES 130578 VAMS Ce PULSE 170.750 voe CURRENT 40008 158THE CASE FOR GE-MOV™ VARISTORS Actual photograph of oscilloscope recording of a household power line input (24 hours) Voltage transient problems can be caused by: Lighting Power ema Contact switching Electromagnetic coupling (noise) GE-MOV™ VARISTOR CLAMP DANGEROUS VOLTAGE TRANSIENTS AND DISSIPATE THEM AS HARMLESS HEAT ENERGY. 189APPLICATIONS Solid State Motor Control Solid State Relays/Timers AC Line Cord Protection Control Are Suppression ‘Teatfic Controllers Communication Equipment ‘Automobiles Calculators ‘Smoke Detectors Instrumentation ZA SERIES REPLACEMENT FOR the following when used as transient REC Networks (non-dv/at) Neon Bulbs ‘+ Gas Discharge Tuber '© Electronic Crowbar Circuits 18 souLes. Replaces Manyeners * Voltages 12-115 VAMS, 16-163 VDC * Energy Absorption to 15 Joules # Peak Pulse Current to 100A # Characterized @ ImADC * For Complete Specifications, see Page No. 1438, 160Rigid Mount PA SERIES ‘+ Up to 15W Dissipation * Voltage Range 130-675 VRMS, 170-750 VDC « Peak Pulse Current to 4000 » Meets NEMA Creep and Strike Distance * For Complete Specifications, see Page No. 1432 wes Be 8 ek anexs ae! fees svete sszeu sseeu seen MA SERIES Low Cost © Designed for Automatic Insertion * Molded Axial Package # Voltages 18-264 VRMS, 26-365 VDC ** Energy Absorption to 700 mili Joules # Peak Pulse Current to 20A © For Complete Specifications see Page No. 1426. Nove, a Tore ae aE 7102 VOC ge oe ae ty 161ATTA L SERIES Protection Up to 120, 240, 277, 480 VRMS, 130-625 VDC ‘= 000A Peak Pulse Current Capability * Energy Absorption to 160 Joules '* For Complete Specifications, see Page No. 1418 BAe se eAHE 33| tlk tes Hh | an 2h 0 Et ‘pasua S0EUnd nue tes sae i i nee ee a aaS8 2828 ee Bea8 B85: See ona Ge nese esse seex case mH a ae i ite ne 162POWER MODULES "New General Electric power modules are miniaturized, selfcontained, Epoxy encapsulated madules capable of performing basic AC to DC conversion functions. ‘Typical applications include — OC power supplies, DC motor controls, battery chargers, magnetic clutches and brakes, All General Electric power modules incor porate Power Glas™ passivated semiconductors with the latest pellet mountdown and interconnect techniques, thereby assuring the utmost in reliability. COMMON CHARACTERISTICS @ 25°C Isolation Breakdown Surge, Peak One Cycle Fusing, Pt @ 8.3 meee Gate Current to Trigger (Max.) Gate Voltage to Trigger (Max.) . On-State Current Rate of Rise (di/dt) Off State Voltage Rate of Rise (dv/dt) Operating Temperature . 2,500 Vecax = 300A 370 A*SEC 40 ma 25V 100 A/uSEC 20 ViSEC 40 to 128°C GE TYPES BASIC CIRCUIT SCHEMATIC lo AVERAGE @85° (A) asic cIRCUIT|FREE WHEELIN wiraour | without |_ witout GEMOV |eITHER DIODE! biove | vanisTor | on VaRIsToR| wy2ee25c wv2ec25c | W2BE25C | w2ec25c ee Wv2BE25E wv2B025E waec26e wv28K26c W2BK25C wv28K25E W2BK25E 163 TTTGE TYPES BASIC CIRCUIT SCHEMATIC lo AVER, jeas'c (a) BASIC CIRCUIT wiTHouT SEMOVe VARISTOR wy2BH25¢ waBH2sc wv2BH25e waBH2se waca2sc WV2CA25E W2cA25e W2Aasoc WV2AABOE W2AABOE BASIC BUILDING BLOCK MODULES For further information on these and other ‘custom circuit types, contact: GE Semiconductor Electronics Park, 7-49 Syracuse, New York 13201 Phone: (318) 456-2633 For outline dimensions and pinout configurations, see PAGE 1444 164SUBSCRETE™ DEVICES DESCRIPTION: of Subscrete™ Devices from General Electric is a series of chip-like devices designed specifically for hybrid circuits or similar circuit manufacturing techniques. Available in three basic configurations, Subscrete™ Triacs, SCR's and Rectifiers utilize Power Glas™ passivated pellets providing the ultimate in device performance and reliability. The intimate, void-free bond between the silicon chip and the stress- matched, glass coating provides stable, low level leakage Current and long-term reliability. When properly mounted and heat sinked, these fully tested Sub- screte™ Devices can provide equivalent performance and reliability of comparable discrete devices at substantial cost savings to the user. PACKAGE CONFIGURATIONS: ‘+ STEP LEAD CONFIGURATION = Completely ready to reflow solder with copper step lead attached to the chip top contact and a soft soldered stress-elief plate at: tached to the chip bottom contact. Current and thermal spreading accomplished by attached step lead and steess-elief plate. No additional connections to chip required by user. All contact areas are solder-clad and in @ common seating plane, ISOLATED CONFIGURATION ~ Soft soldered, stressreliet plate between chip and metallized pad fon substrate = Bottom of substrate metallized and solder coated allowing retlow attachment to heat dissipator, — Current and thermal spreading accomplished by attached step lead and stress-elief plate, = External leads available for electrical connectors. = No additional connections to substrate required by user. SANDWICH CONFIGURATION ~ Softsoldered, stress-relief plates attached to both top contact and bottom contact areas, providing for current and thermal spreading. = Top and bottom contact plates can provide for customized mounting by user without coming in contact with the chip metallization, 165SUBSCRETE™ DEVICES POWER SERIES + Triacs + SCR’s + Rectifiers TRIACS (ooo 0 2283 io 68 Se ras ee - = Mil Plots FULL CYCLE loam Von (STATIC) PT] SiRate | Some | ee | Sere cere! || Set vee cereus, ne |] (maximum) | (maximum) | (MAXIMUM) | 0: 2 wo duide tonultenm | vray stamicy VEAR PEAK cRITICAL orrstare | onstare | RATEOF-Als Jon nevense | Vorrace | oF orFstat current | “Yours ‘VOLTAGE GE TYPE ma T= 100°C CURRENT RATINGS (RMS) voursip SE maximum | maximum | “TYPICAL 02 Mpaz35 | Chu 20.00 bi, 50 rg PEAKONECYCLE | inna, SURGE (NON-RED) | peax REVERSE FORWARD CURRENT | CURRENT ma | VOLTAGE, VOL’ Vey MAXIMUM Peak FORWAR! Ge Tyee | | | @ eRe amines. | Commer). | cuaxiion aa TT ae Passo | | 02 Cane 168"or 1 ge Shre rs Larchuna cannent wousine | CURRENT, CURRENT | ira” GATE tira Gate mate ns a he Larchine CURRENT racerctic given for Ty = 25°C uniss otherwise stated 2. Ric Datinision: ‘Non-tsolated Configurations: Thermal resistance from junetion to geometric canter of ‘bottom plat ‘+ For laolaed Configurations: Thermal resistance trom junetion tobottom of substrate under ‘geometric center of chip. 3, Most maximum allowable ratings depend almost entirely on the quality and thermal ‘charecteristics of the bond when mounting the SubserateT™ Device. For this reason, ‘normal ratings suchas average curen, surge curent and operating temperature range, sre obtainable whan the solder thickness Is limited to <3 mils and good wetting Ie ochioved.MILITARY TYPES AVAILABLE Ti Be te AHS Ticssss00re7 | [ciwtan mcsxas00rne [awcanaonn, ose rncs55007260"] [pvc anas0rt MS 19507201 TAN ANIZOER wmcsssoor60 |] [incannsat MIL8:15500°57 an sme, 1538 wmcsissooria | [pak anusara Ls9800/88 ATOZ, Bi wmcsaecor | fiance, mi s95007162 a IACINSSE ims 18500706 wicssoran7_| [aan ante, 39860108 Wik 19507257 iL -1950008 a aT ‘wis 0 aR fara 37 iL 19500 /268 TARE, MLSE HIGH RELIABILITY SPECIFICATIONS pt compa ‘arena Tas 9 F100% 00 7a TeerHARDWARE170Semiconductor product application and circuit design in ‘mation is provided in these application notes and article reprints from professional and technical journals. Prepared and written by General Electric's Semiconductor Applica tion Engineering Center, these publications give you a val Uable solid state reference library. Particular publications which interest you may be ordered by publication number from: Inquiry Clerk, General Electric Company, Semiconductor Products Dept., Bldg. #7, Mail Drop 49, Electronics Park, Liverpool, N.Y. 13088, PLEASE ORDER BY PUBLICATION NUMBER General References: 457.138 Semiconductor Data Handbook 1, General Applications of Signal Diodes and Transistors 190.28 The Use of “y" Parameters in Transistor Circuit Design 90.20 Measurement of Stored Charge in High Speed Diodes 90.62 Y Parameters: Ther Accuracy and Measurement 90.86 Transistor Models for CACO 200.52 The Characterization of Power Transistors to. Avoid Forward Bias Second Breakdown 200.56 On Switching Inductive Loads With Power Transistors (660.22 The Comouterized Use of Tronsent Thermal Resistance to Avoid Formers Biased "Second Breakdown in Transistors ‘Audio Amplifier Citeuits ‘90.59 Low Cost Audio for Line-Opereted Radio, TV, Phone ephs, Exe 90.78 Portabie TV Sound System 90.89 1 to 2 Watt Amplifier Circuits Requiring Minimum Components 90.91 TV Audio Amplifier 90.98 Monolithic Darlington Preamplifier 90.99 Medium Power Amplifier Circuits 90.100 High Poser Audio Amplifier mentary Audio Outputs Make A High Perform ance, Low Cost Audomobile Receiver TV colar Difference Amplifiers Using High Voltage ‘Transetors Video Output Considerstions Using 9 High Voltage ‘Transrtor Models for CACD 90.87 A Four Transistor Line Oparated Raia Receiver 90.88 RGB Video Amplifiers for Color TV Offer High Pertormance 90.97 Heotsink: Lass RGB Amplifier for Color TV 200.63 Complamentary Vertia! Deflection ~ Twro Approaches 200.64 Horizontal Oetlection Under Normal And. Arcing Conditions 660.23 Using Improved Transistor Models in Computer Aided Ansivsi of 2 AGB Video Amplifier m 4. Converters and Inverters 190.75 Designing A 12:Volt OC ta High Voltage OC Converter 200.87 An Assortment of High Frequency, Transttor Inverters) Converters Utilizing Saturating Core Transformers 1200.75 Optimizing Battery-Powered Transistor Inverter Design 201.25 A High Input Valtage Convertor Miscellaneous Transistor 80.14 Tape Erase and Biss Oscilator 90.80 A Practical FC Tone Generator System for Electronic Orsans 924 Sound Ettect Generator Rectifier Application Notes 200-1. Characteristics of Common Rectitier Circuits 200.20 Capacitor Input Filter Desien with Silicon Rectifier Diodes (Revision) General Applications of Thyristors 90.28 A Rng Counter For Orving Incandescent Bulbs 90.68 Reversible Ring Counter Utilizing the Silicon Con teolog Switch 90.94 The Complementary SCR ‘Semiconductor Application Information Power Semiconductor Ratingt Under Translent. snd Using Lon-Current SCR’ (Revision) Using the Triae Control for AC Power (Revision) Flashers, ing Counters and Chasers (Revision) Design of Tiggering Circuits for Pawar SCR's Handling & Thermal Considerations for GE Power Devices ‘Application of General Electric SubsereteT™ Devices 'SCRlgnitron Comparison guia Cooting of Power Thyrisore ‘Teehnoiogiea! Trends in Power Semiconductors Significant for Electric Vehicia Controls ating: & Applications of Power Thyristors for esstance Wading ANIM&. General Phase Control Circuits 200.21 Three Phase SCR Firing Cireits for DC Power Supplies 200.31 Phase Control of SCA's With Tronsformer And Other Inductive AC Loods 200.33 Regulated Battery Chargers Using the Silicon Com trolled Rectitir 200.48 AC Voltage oF Current Regulator Featuring Closed Loop Feedback Control 2 oi 201.12 500.Watt AC Line Voltage and Power Regulstor 201.14 Automatic Liquid Level Control 201.18 High Voge Power Supply for Low Current Applications ‘Applications for C106 Economy SCR. Liatting Control 200.18 Fluorescent Lamp Diryming With SCR's and Associcted 200.58 Solid State Incandescent Lighting Control ‘Motor Control 200.42 Solid State Control for DC Motors Provides Variable Speed With Synchronous Motor Performance 200.44 Speed Control for Shunt Wound Motors 200.47 Speed Conteol for Universal Motors 2OV.AG Fan Motor Speed Control Dimmer Temperature Control 200.81 A Zera Voltage Switching Temperature Control 200.70 Low Resistance “Sensor - Zero Voltage Switching “Temperatura Control 1671.12 Optimum Solid State Control Parameters for Improved Performance of In Space Eletric Heating Systeme 12, SCR Inverter Circuits 200.49 A Low Cost, Ulratonie-Frequeney Inverter Using A Single SCR 1660.14 Bare Magnetic Functions in Converters and Inverters Including Naw Soft Commutation {660.16 SCR Inverter Commutnted By /An Auxiliary Impulse 80.18 An SCR Inverter With Good Regulsion & Sine Wave Ourput 671.21 Resonant Bridge Invector Protection of Power Semiconductors 200.10 Overcurrent Protection of Semicondvetor Rectifiers 20060 GEMOVTM Varistors Voltage Transiont Suppress 200.71 Using GE-MOVTM Vorisiors for Voltage Suppression Due to Switching Inductive Losd 200.73 Testing GEMOVTM Varistors 200.77 Ostecting and Suppressing Nonosecond Wide Spikes With GeMOV™M Varistors 172 14 18. 18 201.28 Energy Dissipation in GE-MOVTM Varistors For Vari: fous Pulse Shapes 1860.21 Take the Guorswork Out of Fuse Selection {660.24 Analysis and Detian of Optimized Snubber Circuits for Guat Protection in Power Thyrstor Applications 60.28 Metal-Oxise Varistor: A New Way to Suppress Transients Optoclectronic Applications 200.34 ‘The Light Activated SCR £200.59 How to Evaluate Light Emitters & Optic! Systems for Light Sensitive Silicon Devices 200.67 How to Use the Plastic Photodarlington Transistor 200.68 High Periormance Circuits Using the Plastic Photo dartington Uniunction Applications 90:10 The Unijunction Silicon Controlled Switches Using the Silom Bilateral/Unilaterl Switch 90,68 The Silicon Unilateral Switch Provides Stabl cal Frequency Division 90.70 The 2N6027 ~ A Programmable Uniunetion Transistor 90.72 Complementary Uniunetion Transistors 90.92 Optimizing PUT Oscillator and Timer Desions 671.13 Innovation for Circuit Simplification “Tramsistor Characteristics and Econom! Tunnel Diode Applications 190.22 Tunnel Diodes as Amolities and Switches 90.43 A Tunnel Diode R.F. Radiation Detector 120.44 Proctical Tunnel Diode Converter Circut Considerations 90.45 Tunnel Diode Sinewave Oselaors 190.66 Applications for the 1NG712 Series Tunnel Diode Test Circuits 201.3. Portable SCR and Silicon Rectitie Taster 201.27 DIAC Test Greuit Reliability 95.10 A Report On The Reliability of General Electr Unk jonetion Transistor Types, ete. — dated material 195.14 Uniiunction Transistor Types 2N2646, 2N2647 195.29 Improved Trise Reliability Through Power-Gias™ 95.31 Relinbility of Double Heatsink Diodes 95.37 GE Unijunetion Transistor Reliability 95.29 Guide to Designing for Reliability in Power Semicon- ‘ductor Deve Applications 195.43 Semiconauctor Reliability Report 95.44 Reliability of General Elactie GE-MOVTM Varistors 96.45 Platte. Encapsulated Signal and Power Transistor liability General Electric Mets-BondTM Diodes What the Reliability of Plastic Encapsulted Devies Means To YouMAJOR GENERAL ELECTRIC SEMICONDUCTOR COMPONENTS ANMTUHHGENERAL ELECTRIC WORLDWIDE ELECTRONIC COMPONENTS SALES OFFICES 2177 ALABAMA Huntevile 35603 3522'S Memorial Phew, Sie # ‘res Cove: 208, aan ARIZONA Phoenix 85018 5520 North 16en St, ‘Ares Code! 602 peenian CALIFORNIA Los Angeles 90066 11840 Wi, Ciympie Bs, ‘uso Code: 219 anor 968 Palo Ato 94206 1201 Page Mill Suite 228 ‘rea Code: 435 ‘90'2000 COLORADO Denver 20201 201 Univeraty Bt ain Aare PO. Box 2831. 80201 Drea Code. 3 saov20a CONNECTICUT ‘a Boston Sve DISTRICT OF COLUMBIA fate cherch, vs, 22043, 7777 Caesar Bike Ares Cage 103, 780900 FLORIDA North Paim Benen 29408 321 Normsks Biv, Ste 101 ‘res Code: 905 ILLINOIS: ‘hicago 60a ‘S800'N, thivaukee Ave ‘eon Code: 312 T1600 INDIANA, Fe Wayne 46905 2100. sate Be, fares Codes 210 ‘fe2se? 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Box 1402 Capetown, SA Tere rsst AUSTRALIA ‘Australian Genera Electric Li, ‘3650 Bey Se Ukimo, N.S, 2007 Tel" 2i2 3711 AUSTRIA (Genaral Electric Techical ‘Serves Comoany, Ine: est Central Europa Lisson Peter Jordan Stree 99) TT8O Vienna, Auris BELGIUM General Eiciric Company {USA (Ghaussee De La Maine 150, 51170 Brusses ‘Tet'680 20 10; CANADA Canadian Genera! Electric Co. 189 Outten St. ‘Toronto, Ontario, Canada reo Cogan a8 ‘Tolb3r-agt ENGLAND International General Electric ‘Company of New York, Lia Park Lorne. Wiper Ra London nW7 aL Fel orage-st00 FRANCE General Eicirie Technical Service ‘Company ine France 42 Aumnus Moniigna Pete GERMANY General Elecrie Germany Postoen 2969 Etcharshoime’ Lencsrate 60.62 6000 Frenktucthfe ‘Ter tostthisest 178 INDIA Elpro Internationa! Lea Producer Goode Onpt Nirmal btn Place Norman Point. Bombay 490021 Sel" baaant ” IRELAND Elecwonie Tring Co, ‘The Dameane Gouney tour Festoaay a2a71 ITALY ‘Compapnia Generate Elona SP. Vie Pergole: 26. 20124 Mian Ye "202808-203208 JAPAN ‘omen 65g. Floor 23h, Repro, chore, ‘Tokyo, 108 Japan ‘Ter Gi.t08.2020 MEXICO General Elciric De Mexico, A ‘Aportedo 65:96 ‘Morina Nacions! No, 265 Mexico 17 5. Tet 546.63.60 SINGAPORE General Electric [USA) Asia Co, Gathay Builaing, Suite 104 Singapore, 3 Euifiee Espana Apsineds 700 Avenicn Jose Rotsno 8 agri Ter 247.1608 SWEDEN Electric AB Face Tyitonvenen 27 F730 Solna Sweden {TO 084790 07 40 VENEZUELA Genera Ewczic Oe Vanezunla S.A, Ssbana Grande GraceSil icon Rectifier 10A & 20A Types 1N248-50,A,B ‘These stud mounted diffused junction silicon rectifiers are designed for all rectifier applications in the 10 to 20 ampere range. A high junction temperature rating and an extremely low forward voltage drop and thermal impedance permit high current operation with minimum space require, ‘ments, ‘These rectifiers may be mounted directly to a chassis or a fin or may be electrically in ulated from the heatsink by using the mica washer insulating kit General Electric research, advanced development and product design have resulted in a highly efficient rectifying junction. This feature, plus a mechanical design employing high temperature hard solders and welds for all internal and external jointe and seals, which el under all operating conditions, electrical ratings and specifications (wes, raisive tes common sources of thermal fatigue failure, ‘has produced a silicon rectifier with outstanding reliability Inductive Lond) : + IN248 1N249 1N250 IN248A IND49A IN250A IN248B 1N2498" 1N250B' ‘Max. Allow. Peak Reverse Voltage (Repetitive, 05°C to 4175°C)* 50 100 200, Max. Allow. Peak Reverse Voltage (Repetitive at 25°C)* 50 100 200 Max. Allow. RMS Voltage TO 10 Max. Allow. DC Blocking Voltaget_ 50100200, ‘Max. Allow. Forward Current (Single Phase or Three Phase 150°C stud temp.) = 10 Amp DCm Peak Recurrent Forward Current. #45 Amp—e— Max. Allow. Peak One-Cycle Surge Current 200 Amp ‘Max. Full Load Voltage Drop (7, = 25°C) At25A, 15 Volts ‘AtGoa, ‘Max. Leakage Current at Full Load (Single Phase, Full Cycle Aver- 50 100200 50 100200 oes rd a0 50 100200 20 Amp DCm 90 Amp 350 Amp 15 Votts 50 100-200 Volts 55 110220. Volts 140. Volts 50 100-200 Volts —— 20 Amp Dom —— 99 Amp—— —— 350 Amp ——15 Volts age, 150°C stud temp.) $$ 5 mitiamp ———________ Junction Operating and Storage ‘Temp. Range $$$ ~ 5° to 4.195¢¢ ——_____»— Maximum Stud Torque 30 inch-pounds. —— ‘Masimom voles apsly With a hee snk thermal Fenutanes of #*C/at or lst matinum rated Sanction toomersene 2011N248-50, A, B OUTUNE DRAWING nevame z MARDWARE .0008 sec, and ‘© A089 see, non-recurrent) 60 Ampere? seconds Maximum Full-Loed Voltage Drop (Te ~ 180°C, single-phase, fullycle ave.) (058 Volis* Maximum Thermal Resistance, 3. 25°C/Wait Storage and Operating Junction Temperature, Ty : 65°C to 200°C" Stud Torque : 12 Lbsin (Min), 15 Livin (Max)* Mi Kg-em (Min}, 17.5 Ke-em (Mav) * Notes: (2) Maximum voltages apply with a heatsink thermal resistance of 22°C/watt,or less at maximum rated junction temperature, (2) Maximom voltages apply with a heatsink thermal resistance 7°C/watt, or less, at maximum rated junetion temperature, (2) Case temperature, Te, is measured at the center of any one of the hex fats. ‘ndeates value included In JEDEC Type Number Registration, 23‘1N1199A-1N1206A, ‘1N1199RA-1N1206RA [be ‘1N3670A-1N3673A_ 1N5331 7 iF leo 8 8 FORWARO POWER DISSIPATION - WATTS INSTANTANEOUS FORWARD CURRENT-AMPERES 0 2 4 6 8 10 12 14 16 18 20 22 24 26 26 30 32 34 AVERAGE FORWARD CURRENT ~ AMPERES 2, FORWARD POWER AS A FUNCTION OF AVERAGE FORWARD Ccunnent (t, = +200") ° oes 30 83 40 ‘wstantanéous Forwano” vase - VOLTS. 1, MAXIMUM FORWARO CHARACTERISTICS SW bey je : Z + zB. sy 7 ; | “| i [| 2 PT ceemoatnne | He LE | 1. MAXIMUM CASE TEMPERATURE VS. AVERAGE FORWARD CURRENT 4, MAXIMUM SURGE CURRENT FOLLOWING RATED LOAD CONDITIONS 2142 INTI99A-1N1206A 7: Ht TNT199RA-IN1206RA HPL ‘IN3670A-1N3673A ao 1N5331 zt PU 45, SUBCYCLE SURGE FoRWaRD CU JRRENT AND (4 RATING FOLLOWING RATED LOAD CONDITIONS { ‘(Chee [REQUIRED FIN SIZE — FREE CONVECTION, SINGLE FIN, UNIMPEDED RADIATION. |, REQUIRED FIN SIZE— FORCED CONVECTION, IMPEDED RADIATION 7, REQUIRED FIN SIZE— FREE CONVECTION, IMPEDED RADIATION TO USE GRAPHS 6, 7 AND & 1. ter oroph ot vertial exis with desired Tuned by proper caret c-0.20 seas Yest00 sea 2. Intrcopt desired 6 cree 3. Read om hors the marion 215‘1N1199A-1N12064, ‘1N1199RA-1N1206RA 1N3670A-1N3673A. 1N5331 INSULATING HARDWARE Kite ore : ote © COPPER TERMINAL O16 THICK, TIN PLATED @orass WASHER, O35 THICK NICKEL PLATED @MicA WASHERS, TWO, .625 0.0, 204 1.0,, 905 THICK @ TEFLON WASHER,270 00. -204110.,.050 THICK AVAILABLE UPON REQUEST 080 R 9. MAXIMUM. TRANSIENT. THERMAL OUTLINE DRAWING IMPEDANCE — JUNCTION TO. HEATSINK 10-3 Sire go Be ee DIA ly i] a FFP Te Dvocnwasne, Neat | — | COMPLIES WITH EIA REGISTERED OUTLINE DO-4 INCHES MILLIMETERS SYMBOL [yan | MAX MIN. | max.|%° | a 405) 10.29 oD 42d 10.77 f 424 AaT 10.77 11.10 F 075 175 191 4.45 a 800 20.82 m 250 esol | a N 422 453 10.72 11.61 ot 060 1.52 w 2 NOTES 1. Angular orientation of this terminal is undefined 2. 10.32 UNF-2A. Maximum pitch diameter of plated threads shall be basi pitch diameter { 1607", 4.20 MM). Ret Berviees 1981) Handbéok H28, PI. 216 (Serew thread standards for FederalSilicon Rectifiers MEDIUM CURRENT 6A TYPE INI341A-48A IN1341RA-48RA ‘These stud mounted diffused junction silicon rectifiers, (designed to meet MIL-E-1/1108) are recommended for all rectifier applications in the 2 to & ampere range. A high junction temperature rating and an extremely low forward voltage drop and thermal impedance permit hhigh current operation with minimum space requirementa, These rectifiers may be mounted directly to a chassis or a fin or may be electrically insulated from the heat sink by using the ‘mica washer insulating kit ‘Versatility is further increased by the availability of a negative polarity unit (atud is anode), described by the sullix “R”™ ‘appearing after the type number. The use of positive and negative polarity unite facilitates the construction of bridge circuita and permits the use of either a positive or negative heat sink in half-wave and center-tap applications. Goneral Electric research, advanced development and product design have resulted in a highly efficient rectifying junction. This feature, plus a mechanical design employing high temperature hard solders and welds for all internal and external joints and seals, which liminates common sources of thermal fatigue failure, have produced silicon rectifier with outstanding reliability under all operating conditions, electrical ratings and specifications (on teisive or indaive tnd) ANISATA 13420 INI3494 TNI3AA INI245A TNTSMGA INTSITA INTAABA TNTSAIRA INDIRA INTSOORA INTSARATNTSGSRA INTSAGRA TNTSATRA THTSGORA, Max. Allow. Transient Penk Reverse Voltage (Nan-recurrent, 5 millises. max: duration, Ty 0 t0 200°C), 100 200 300360 450600700800 Valts Blips) oe pee enes 50 100-150-200 300400500800 Volts Max. Allow. RMS Voltage 35 110514020280 850420 Volts Max. Allow. DC Blocking Voltage** 50 100150200 800400500600 Volts Max. Allow. Forward Current (Single ‘Phiate "160°C stud temp.) <6 amperes ——_______» Max. Allow, Peak One Cycle Sarge ictent foomtecareealy << 110 amperes —____» Te Rating (for t greater than .0008 sec. ‘and lees than .0088 tec. (aan-recurrent) <—25 ampere? see. — min. rating (Ty =-65°Cto +200°C) —> ‘Max, Full Load Voltage Drop (Single Phase, Full Gycle Average 160°C stud temp.) << 44 volts > Max Leakage Corrent at Full Load ‘Single Phase, Full Cycle Average S180°G stud temp.) Max. Thermal Resistance (junction to stud) Junction Operating and Storage "Temp. Range ‘Stud Torque ‘asim voltae appiy with « bent sink thermal revistance of 22°C/ Watt or las at max sitter voltages apply with bo sak thermal rastance of T/Wa or leon‘ oasimum read neti tempernecre 27aNIGuINaeR OUTLINE DRAWING ‘IN1341RA-48RA Snecron oF Easy conan Sinent Fou muison nso INSULATING Dasa oF cay COWEN HARDWARE Een flow hoona NIZORAL KT OUTLINE DRAWING [Lincnes __wicumerens erro ievense rowan svmaot ores Fewano rocanrt win [max [min | max x “405 1029 ep 24 10.77 at E 424 | '437_ [t077 | tt0 & { Fis | cas fist | eas 4 5 Ato 20 m 350 eas | 1 | Op-zergiwe N fa | 253 from [att Saohewatatee | Li ou | 050 182 vgemwnatene 2“ 2 sree Coaeaa 8 REGISTERED OUTLINE 00-4 Nore ee 1 Angola orientation ofthis terminalis undefined, 2 10-32 UNF-2A. Maximum pitch diameter of piated threads shall be basi pitch diameter 1697", 4.29 MM), Ref: (Screw thread tandards for Federal Sorvices 1987) Handbook H28, Pl NOTES: (1) UNIT WEWHT — 25 OZ (2) ica MASHER mc NGUNTING KIT MAY AD0 APPROX GSM /mart THemual ReSISTANCe stuo TO oes agen Ons mete rset sate 8 “| AA mr g hy + MaxmnuM mil g i | TH a rer 05 10 15 20 25 30 35 00 45 80 INSTANTANEOUS FORWARD VOLTAGE OROP- VOLTS 2. REVERSE CHARACTERISTICS MAXIMUM AND TYPICAL FORWARD CHARACTERISTICS 28« {4 cH 1N1341A-48A, i ee ee (Finiaairaasra_| i” | ES | ie { EE | : it or - 3. FORWARD POWER DISSIPATION 3 : i | |_|} ‘ease, sae SS : ie toa 4. MAXIMUM ALLOWABLE STUD TEMPERATURE 5. SURGE RATING (1-60 cycles) i ema § CCC | FIL | 8 a0 Soe daettas See z RS G8 Bee, 5 fag Ee J scwmee | z T & 4 sek 7 at i | 6. SUB-CYCLE SURGE RATING 219IN1341A-484, ‘1N1341RA48RA TO USE ORAPHS 7, 8, 9 Fp LES I: ye r 8. REQUIRED FIN SIZE—FREE CONVECTION, IMPEDED RADIATION IMPEDED RADIATION Uf ceria nara ao runrign wromaanont a 10. MAXIMUM TRANSIENT THERMAL RESISTANCE 220 E iui Fe buena t Sods Mat i f q 9, REQUIRED FIN SIZE—FORCED CONVECTION,Silicon Rectifier MEDIUM CURRENT 5A ‘These popular stud mounted 5 ampere rectifiers are the commercial version of the MIL-10500/162 rectifiers. They were designed specifieally to meet this military spectfiea- tion. Hermetic seals, one piece terminals, and all-hard-tolder construction are the major So features of this design. The all-hard-solder or welded construction is an important fea ture for the designer to consider. Temperature excursions caused by heating and cooling - when the rectifier is used intermittent at maximum rating will cause thermal fatigue Ina soft-solder construction. The hard-colder and welded construction provides frestom cK fom thermal fatigue fares ‘The msi fore of his design oe *' Hart'Solder, Thermal Fatizue Free * Slid One-Piece Terminal ® Low Thermal Impedance ¢ Transient PRY Ratings electrical ratings and specifications wo. wwe antes inranss antares Max. Allow. Transient Peak Reverse selina Slioans INIA INTER Voltage (Nonattrene bles ax duration, Ty 0 te 180°C) 100 200 260 00 00. Votts Max, Allow, Peak Reverse Voltage ‘Tepetitee) = so 100 200 400 600 Volts Max. Allow. RBS Voltage 35 70 10 280 420 Votts Max. Allow. DC Blocking Voltage** so 10 200 400 600 Volts Max. Allow, Forward Current (Single Phaae 150°C weed om) <5 amperes ——__> Max. Allow, Peak One Cyclo Surge Gierent (nonetceurren) << 180 amperes ——____> Tt Rating [for t greater than_008 se. 25 ampere? see — min, rating ‘and less than 0083 sec. (non-recurrent)] <—— “(7 = =65°G to +190°C) Max. Foll Load Voltage Drop (Single Phase, Full Cycle Average 150°C ud emp) =F Noy, Leakage Corrent at Full Load 50°C stud ernp.) _ 10 10 10 10 10° ma Max. Thermal Resistance (junction to stud) <—__ worwatt —____> Topetion Operating snd Stor "Temp. Range ee << -8'c to +190" —__» Stud Toraue Minimum 12 inclbe; Maximum 15 intbe ‘astm votes opp with «heatsink thermal Sesance of Watt ole at maton rate oscon tempera ‘Avalinble we MIL S100 /368deviom, 21(ram INSTANTANEOUS FORWARO VOLTAGE OROP- VOLTS IneTanTaNOUE RevEREE WoKTAGE-WOLTS 1. MAXIMUM AND TYPICAL FORWARD CHARACTERISTICS 2, REVERSE CHARACTERISTICS i ttt eet mt 3. FORWARD POWER DISSIPATION 4, MAXIMUM ALLOWABLE STUD TEMPERATURE 222| 1N1612-16, R 5 3 3 | a8 ] i Fi i 5 i 3 2 # | 5, SURGE RATING (1-60 cycles) REQUIRED FIN SIZE—FREE CONVECTION, SINGLE FIN, UNIMPEDED RADIATION *8. REQUIRED FIN SIZE—FREE CONVECTION, IMPEDED RADIATION *9. REQUIRED FIN SIZE—FORCED CONVECTION, IMPEDED RADIATION 6 ‘SUB-CYCLE SURGE RATING + 10 USE GRAPHS 7, 8, 9 1 Eater graph ot vertical ie with dour ers eet40 i 2231N1612-16, R ML 10, MAXIMUM TRANSIENT THERMAL RESISTANCE OUTLINE DRAWING al oo | j Al 3 © Baoaomstareo | A 1 oa’ é e008 cecum AED AL L. m eeBeatha este” 4 Oeapen gna oe ree COMPLIES WITH ‘wASHER,03S THICK ca neciSeERED OUTLINE 00-4 ; on meres? ompe mraureen wones_wiuimeTERs syMeoL noves www, [wax [an [max x ~a05 7029 0 ee inn faze | 9 for | into ro fions | fas [tot | eas 5 ‘B00 2032 C 350 es | 1 RN faa | 89 for | ast ot [eo 13 v 2 Notes: 1. Angulas orientation of this terminal is undefined 2, 1032 UNF-2A. Maximum pitch dlameter of piated threads shall be basic pitch diameter (.1687", 4.29 MM), Ref: (Screw thread standands for Federal Services 1987) Handbook H2K, PL 224Silicon Rectifiers Medium Current ae ‘Twa atud mounted difured junction scan octifirs are de- for all rectifier applications in the 2 t0'30 ampere rang ‘Athigh junction temperature tating and. an extremely low Toe ward! voltage drop and thermal impedance permit high current operation ‘with minimum ‘space requirements, ‘Thess rectifiers fay be mounted directly ¢0' chasis ora tn or may’ 'e elee {ically insulated from the heat sink by using the mica washer insulating kit, Versatility is further increased by the availability of a negative polarity unit (sd i anode), described by the ats “i opetclng ater the type number. ‘The use of positive and negative polanty. units faclitates the construction’ of bridge citcalts and periite the use of either a positive or negative hest sink in half-wave and center-tap applications. Stacked fin assemblies (4JASSI1 aories) fare also avaliable. General Electric research, advance development and product Agen ive replied n'a phy” ecient eying junction feature, plus « mechanical design employing high tempera: ttre hard solders and wolds for all internal. and external pints fand seals, which eliminates: common sources of thermal fatigue failure, has produced silicon rectifier with outstanding tell. ability’ under all operating conditions, electrical ratings and specifications sore suisse indecie toad AN2154¢ 1N2155 12156 1N2I57 INDI INZI59 —_1N2160 Max. Allow. Transient Peak Reverse AN2164R 1N2155R 1N2i56R 1NZISTR INZISER INZIEVR — 1NZI6OR Voltage (Non-Reeurrent 5 millses, max. duration) 100 200-850-450 600700800 volts Max. Allow, Peake Reverse Voltage? (Repetitive) 50 100-200» 300400» 500600 volts Max. Allow, RMS Voltage 3-70 4020280850420 volts Max, Allow. DC Blocking Voltage** Bo 100,200 a0 400000 alt, Max. Allow. Forward Current (Single Phase 145°C stud temp.) << ® amperes ——______» Max. Allow. Peak One-Cyele Surge Current. <——___—__-400 amperes > Tt Ratings (for fusing) (for t= 0008 < t <.0088 seconds) << 250 ampere? see. —____» ‘Max. Full Load Voltage Drop (Full Cycle ‘Average — 145°C stud temp.) 060 vos —_______»> ‘Max. Leakage Current at Full Load (Full Cycle Average, Single Phase 145°C stud temp.) 5 48 435 Be ee 2 ma Max. Thermal Resistance (junction to stud) 1 5¢/watt ———— > Masimom voltage apy with seat snk ternal reetane of $°6/e {anime rrted junction temperate mechanical specifications Maximum Stud Torque 80 inch-pounds Mechanical Shock MIL-STD-202, Method 202 5006 for 1 millisec. § times in each of 3 directions Vibration (Fatigue) Any frequency between 45-100 eps with constant peak acceleration of 10 Vibration (High Acceleration) 4100 to 1000 eps with constant peak of 106 Centrifuge 150006 Moisture Resistance MIL-STD-202, Method 106 ‘Temperature Cycling. - B eycles, ~65°C to +175°C 251N2154-60, R Z “ : 7 e 4 . . YY 4 7 a % i , : id i. : BL ihcaore : a i ; A i i mince i | ‘| | rnin | i oe mi are spagpory gusron i nar" — r ot L 20 2 3o ° . 10 1s 20 3 30 1. MAXIMUM AND TYPICAL FORWARD CHARACTERISTICS 3. FORWARD POWER DISSIPATION =| T 5 i eae wee | | ta ser COUTUNE DRAWING | er : cae =e : | ae 2. REVERSE CHARACTERISTICS 226 we COMPLIES WITH. EIA REGISTERED OUTLINE 00-5eppenssovene grup remem sss 4. MAXIMUM ALLOWABLE STUD TEMPERATURE 5. MAXIMUM ALLOWABLE NON-RECURRENT SURGE CURRENT AT RATED LOAD CONDITIONS “ws 1 MIN.I2¢ RATING 250 AMP? SEC. 2 2 400}—+__ lr t 3 500 2 200;— = eB N. & '0°] MAXIMUM ALLOWABLE. SURGE Ss CURRENT IN RMS AMPERES 2 ant 2 4 6 810 20 3040 6080100 200 400600 8001000 PULSE TIME - MILLISECONDS 6. SUB-CYCLE SURGE RATING 2'1N2154-60, R spsmparoneue cme Bh OORT PPR BS PEO | vx i ee 2 "Pear, 5 : i : “. aN A FEES area SA res coren em cans 90% N 7, *REQUIRED FIN. SIZE—FREE CONVECTION 8, *REQUIRED. FIN SIZE— SINGLE FIN, UNIMPOSED RADIATION FREE CONVECTION, IMPEDED RADIATION *TO USE GRAPHS 7, 8 AND 9 Py 1 i 1, Enter graph xis acta roman comment current multiplied by proper current factor: * iia Gace eee 3. Read on allowable ambient tem g } i. es 5 i i 9. “REQUIRED FIN SIZE— FORCED CONVECTION, IMPEDED RADIATION 10. TRANSIENT THERMAL RESISTANCE 28Diode ‘The IN4305 is avery high speed silicon switching diode for computer circuits and general purpose applications. This oxide passivated planar diode features fast recovery time, low leakage and low capacitance. The maxi- ‘mum and minimum forward voltages are specified at four forward currents from 250 uamps to 10 ma, This guaranteed, closely controlled conductance is necessary for the design of clamping circuits, logie circuits and other types of circuits that Fequire tolerances on voltage levels. The double heatsink 1N4305 offers springless Double Heatsink Diode (DED) 1N4305, construction, $00 mw dissipation, reduced package size, and is recommended for on new design, 1 iv05 ia Reverse Voltage 50, volts = Average Rectified Current 150 ma Forward Steady-State DC Current 20000 ima Recurrent Peak Forward Current 22s ma Peak Forward Surge Current (1 usee. pulse) 2000 ma Power Dissipation (25°C free ai 500 mw Operating Temperature “65t0 4200 *C Storage Temperature “6510 $200 °C electrical characteristics: (25°C) uns oxnerwse pesies) 14305 | Min Max. Breakdown Voltage (In =5 ua) By 75 volts Forward Voltage (ly =250 uamps) Vn 505 375 volts Ven 550 650 volts Yn 610 710 volts Yeu 700 850 volts Reverse Current (Vg Ik “t amps Reverse Current (150°C) (Vp In 100 amps Reverse Recovery Time ({,=10 ma, 1,=10 ma) (Note 1) tw 4 msec Reverse Recovery Time (Ur=10 ma, V.= -6V, R,=100 ) (Note 1) 2 nsec Capacitance (V, =0 v) (Note 2) c 2 pf Rectification Eificieney (100 me) (Note 3) Rt 45 % Note 1: Recovery time to 1 ma. 2: Capacitance as measured on Boonton Model 75A Capacitance Bridge at signal level of 50 mv and a frequency of I me. 3: Rectification Efficiency is defined as the ratio of DC load voltage to peak rf input voltage to the detector circuit, measured with 2.0 vems input to thecircuit, Load resistance SK@, load capacitance 20 uuf. 229Silicon Rectifiers nea ees has sgn this 20 Ampere ester sel fr the nr bs stions, The design utilizers the smallest pr wi and ange consactom. The lil nei Te es at sista regi, mimics breakage fobs, 250 Fo ‘i ore feed untiontobea iy af het tanser characters + High Surge Current Capabilities Up to 14 Amperes) 1 Rewrse Polarity Devices Avallable 1N3208R [_IN3214R | ‘AOFM MEM industrial and consumer ict ze for the rate ith Terminal aad the casetorhex OUTLINE DRAWING iE | RATINGS AND CHARACTERISTICS (Single Phase Resistive Load) Forward Polarity Reverse Polarity Max, Peak Reverse Voltage Max, Continuous D-C Reverse Voltage Max, Sine Wave RMS Voltage Max, Avg. D-C Forward Current ‘AL 1i0C Stud ‘At 150°C Stud Peak Ones Ty cle Forward Surge Current (60 eps, ©) Tt Rating for Fusing or Capacitor Inrush Max, Forward Voltage at 20 Amps D-C Forward Current (T;=25°C) Max, Avg. Forward Voltage Drop (15 amps d-e single phase, T, ~ 150°C) Max. Reverse Current at Rated D-C Reverse Voltage (T, 25°C) Max, Full Load Reverse Current (full eyele avg., Single phase) Typical Thermal Resistance (junetion to stud) Operating Junction 7 ‘emperature Range Storage Temperature Range Maximum Stud Torque NOTE” 1N3200-162214 or 1NOZOHR.INA21« MOF AMOR MIF AMA 100 100 70 aoe. aC 300 300 210 408 UB 200 200 M40 oo. ma 400 400 280 AOE IE 500 500 350 Atom ‘AgIM 600 600 420 50 volts 50 volts: volts + 20 amps — 15 amps ———- 00 amps ——_—_+ +100 amp" see ———> 12 volts ———> + 0.45 volts ——> 1.0 ma —__—_> 0 8G 4.0 —_ 15° watt ——— 45 ——— - 65°C to 4175°C ——> + ~ 65°C to +175°C ———> =< 351i Ibs ————> “re identical vw AMOFAOO or AATFAAII vespectvl, 230INSTANTANEOUS LEAKAGE CURRENT-MA MAXIMUM ALLOWABLE STUD TEMPERATURE -*C 13208, R 1N3214, R 1000 aes, 3 40 120 Ho t 7 tf +t + =F INSTANTANEOUS FORWARO CURRENT -AMPERES on 4 ei 6 2 2 AVERAGE FORWARD CURRENT- AMPERES 1. SINGLE PHASE AND THREE PHASE CURRENT RATING [AS A FUNCTION OF STUD TEMPERATURE ° ' 2 3 4 INSTANTANEOUS FORWARO VOLTAGE -VOLTS 2. TYPICAL FORWARD CHARACTERISTICS T A410 nage aac 2s eel C3 200 —~303 0000800 INSTANTANEOUS REVERSE VOLTAGE-VoLTS 43. TWPICAL REVERSE CHARACTERISTICS (T)= 175°C) 231 4. MALEWAVE CAPACITIVE LOAD RATINGRectifiers General Electric now offers 160 ampere silicon rectifier diodes of the EIA Types 1N3260 through 1IN3273. Silicon 1N3260-73,.R This product features: 5 Thermal fatigue resisant &, © Low reverse current Le QO © Great uniformity of product ‘ s nr on aT By 2 Hlgnsurge curren copaliies ; : P seas eB RATINGS AND SPECIFICATIONS: ‘W260 13261 1N262 1N3269 1HBZE4 165265 1N5ZBE 1NBZ6T THI26B 143269 1N2QTO INGZTH 1NS2T2 1N32TI ‘Maximum Allowable Repett tive Peak Reverse Voltage, Vi teD) 50 100 150 200 250 200 350 400 500 600 700 800-900 1000 Maximum Allowable DC Blocking Voltage, Vs 40 80 120 160 200 240 280 320 400 480 560 40 720800 °Maximum Allowable Average Forward Current, (AV) (single phase, 125°C ease temperature) $$ 00 amperes, ——$—$—__— Maximum Allowable Peak One-Cyele Surge Current, Iyaulauree) (60 eps single hase basis, non-repetitive) = Minimuim Ft Rating (non-repetitive) 8.250 amperes' seconds (see Chart 1) ——————— Maximum Peak Forward ‘Voltage Drop, Vw amps DC, Te: Maximum Full Load Reverse Carrent, Inn (full-eyele average, 125°C case tem- £2000 amperes: —————+ Sc) 1.6 vet's ————__—_————_- perature, single phase) — 12 milliamperes ————————- *Maximum Thermal Resist- ance, Ray: (Junetion to ease) C/watt, $+ Storage Temperature, Toss $C te 4178 “Operating Temperature, T, |< 58°C to 4190°@ ——______ Sted Torque’ Maximgm, = 25 ineh-pounds (315 kg-em), + Minimum NOTES: “Models listed are stud cathode (forward polarity) types. Order 1N3Z__R for stud anode (reverse polarity) Yypes, Ratings and specifications are for’ frequencies from 60 up to 400 cycles/second, except where noted aifferently. coRating: assumes a rectifier diode heat sink dissipation of 2.0°C/watt, or less "Hating assumes rectifier diode heat sink dissipation of 1.0°C/watt, oF less. Se of a alleone grease (G-E #G623) between the rectifier base and heat sink is recommended, JEDEC Registration Parameters 2321N3260-73, R ee = j = a a el [| E } | i ee 2 2. AVERAGE FORWARD POWER DISSIPATION V5. tue eae eet pe (ee aoe | [ i 3 ot ; oe 3 \ “Te (St I. se jas |e we JUNCTION TO CASE 3. MAXIMUM CASE TEMPERATURE VS. AVERAGE 2000) fea ce . ‘2000: T T = tt | 8 PH TT i | i i | °F a i t—} tle reer ruse Tme-wnsiseconos 5. MAXIMUM SURGE CURRENT FOLLOWING RATED 16. SUNCYCLE SURGE FORWARD CURRENT FOLLOWING LOAD CONDITIONS (1! = —ssre 0.4190") 233, RATED LOAD CONDITIONS (1) = 55% TO + 190°C)Silicon Rectifiers The IN3249-IN5296 Series isthe ultimate in taday’s High Current Silicon Rectifier fet By taking fll IMlvamage of the most advanced semiconductor component manufacturing tctiniques, General Electric tov offers the industeys frst double dilfaed, all hard solder 100-ampere eee 1 BRN ratings up to TS vols, Ns avesull-crcur designers mow receve Features: + Freedom from Thermal Fatigue Failre + Higher Sarge Current Capab + NEMA Overload Ratings RATINGS AND SPECIFICATIONS SMSehe NGe Bin MGB MER AE He TT nade ‘Maximum Allowable Transient Peak Reverse Voltage (non-recurrent, 8 millisecond maximum duration) 800 400-525 G50 80925 105011751900 1500 volts ‘Maximum Allowable Repetitive Peak Reverse Voltage, Vax (rep) 200 00 400-500 690-700-800 900 1000 1200 volts Maximum Allowable RMS Reverse Voltage «'140-«210-«280350420«490-««-58D_« 630.700, «BAO. volts Maximum Allowable DC Blocking Voltage** 200 $00 «400-500 600 700-800-900 1000 1200 volts ‘Maximum Allowable Average Forward Current (ingle phase, 190°C stud temperature) 1 amperes ——_—_——+ Maximuin Allowable Peak Ono-Cyele Surge Gizvent db eps single: phase basi non-recurrent) <= 1600 amperes, —————_——» ‘Minimum Tt Rating (non-recurrent) + 000 amperes"-seconds (See Curve 8) —— ‘Maximum Full Load Voltage Drop (full-eyele average, 180°C stud temperature, 100, amperes average single phase) 6 volts ——_________> Maximum Full Load Reverse Current (full-cyele average, 130" stud temperature, snglephare) 95 8.08.0 «80GB GO BS BBS BS ma aw Maximam Thermal Resistance (junction to stud) <@——— DC = 0.4°C/w; 19 & 86 = .55°C/w; 6p Storage and Junction Operating Temperature | —@—————— 40°C to 200°C Max, Stud Torque*** $100 Lin (120 Kg-em) ————— Min, Stud Torque = 90 Livin (105 Kem) ————$—$—» Weight Approximately 214 ounces —— + HR” indicates reverse polarity * Rating assumes rectifier cell heat sink of less than 3°C/watt, s+ Rating assumes rectifier cell heat sink of less than 1.5°C/watt ‘+8 Use of silicone grease between rectifier base and heat sink is recommended. Ne Cramp, the Fore emt ratings thet are vie in folt coordi 11, are ratings which apply for ecasonel or unprediable overloads. For Seaign wont 234DIODE SPECIFICATIONS 1N3289-96, R A708, A70T A718, A71T oer bees 7 nate: TT hoot s LTV ] i insess | sane : 1. MAXIMUM FORWARD CHARACTERISTICS MeTAMEDNG ENENSE VOLTAOE-YORTE 2. MAXIMUM TRANSIENT REVERSE CHARACTERISTICS (T) = —40°C te +200) v4 TJ | T — y a | Y ool E 1 74 FI a a 7 i B oof Bel ie Es | z i oo | i g | | a : BL 4 | | 1 | a J. L 2. AVERAGE FORWARD POWER DISSIPATION 4 AVERAGE FORWARD POWER DissPATiON WS. Kvenace FORWARD CUREENT VE AVERAGE FORWARD COMMENT Blow LeveL 2351N3289-96, R_|_A70s, A7oT | A718, A71T INSTALLATION INSTRUCTIONS V5. AVERAGE FORWARD CURRENT {6 JUNCTION TO CASE TRANSIENT THERMAL IMPEDANCE RECURRENT OVERLOAD RATINGS ae I | | BLN | | : =F Ew + = ices eae To o Bea 408 GOO B90 TOU OOOO SB 105 FOOD Fane Fao fa _ : i : 1... Pee felled 7 |? : oer | eS | . \ . HN be ogg oa s-masimun sOR6E cone ron suee¥e PEEEAT KAKO LOAD CONDIHONS MGMT ova co Mag wu sant fo, (MonRecurrnt) Ty = —40°C to +200°C 236Germanium Diodes oa 1N3712-21 ‘The General Electric 1N3712 through IN3T20 and 1N3713 through INS72I are Germaniuin Tunnel Diodes offering peak currents of 1.0, 2.2.47, 10, and 22 ma: ‘These devices, which make use of the quantum mechanical cunneling phenom: enon to obtain a negative conductance characteristic, are designed for low level Switching and small signal applications at very bigh frequencies, All IN3413- IN3721 ersion parameters are closely controlled for use in critical applications such as level detection, frequency converter, ete. These devices ate hosed in General Electric's new hermetically sealed subminiature axial package, INI713 INB7IB 1N3717 IND7I9 INazZZI Forward Corrent? 5 1 250100 ma Reverse Curren 1 25050100 ma Storage Tempera —— -55to 4100 —_.-¢ lead Temporotre 3" =" _— 200 ———> °c ‘rom case for 10 seconds ‘*Derate maximum currents 1%, per “C ambient temperature above 25°C YUNNEL DIODE SYMBOL, 237 Features: Vp Specie form SFloed tines > Low copacionce Dror epee AXIAL DIODE OUTLINE % seo pH nom te | ES EQUIVALENT ciRCUIT Typicat, staric (IASED IN NEGATIVE CHARACTERISTIC! CURVE CONDUCTANCE REGION)1N3712-21 electrical characteristics: 1N3712 0 1N3713° 0 IN3714 1N3715 STATIC CHARA Min. Typ. Man. Min, Typ, Mex. Min Typ. Max. Min yp. _ Mo. it 09 10 11 0975 1.000 1.025 20 22 24 215 220 225 1 012 018 07S 085 140 029 048 165210310 Vv. a sceetosmeas 85, 56s Point Voltage v. 350 15 358 995) 350 315855 895 en hetyp) Ve 40 2040 0 2040 Forword Veltoge (Iv = In typ.) Vou 500 475510685 75510 535 > (i= 25 We typ.) Vast 410 350 410350 DYNAMIC CHARACTERISTICS Teel Series Inductance ae 8. os 08 Tot! Series Resinonce Re 15 40 ieee 6 ema OSD i430 > Volley Point Terminal Capacitance —_C. 530 3550 1025. 2010.0 Mon, Negotive Terminal Conductance —-G 5 Tommesmasem 18 wey Resiive Cute Frequency i 23. 82 a 3.0 Sslsenonant Frequency fh __ 32 38 22 a Frequency of Ovation Fa a 38 22. 247 > ise Time 1228 16. rr —-——“#>M 40) — = _. | 8 0 NORMALIZED TO 25°C VALUE NEGATIVE. CONDUCTANCE | VERSUS I | TEMPERATURE oo ac 785 75 Foo 2381N3716 1N3717- 1N3718 1N3719 1N3720 1N3721 Typ Mex Min, Typ 4247 52458 4.70 482 20100 140915 1000 1095 202 21 06-99 BE am 060 1.04 8504560 1S 227595 1.40 294s 165210840 ma 6 3865 ta S865 12 ‘5 @ 52 mw 280 535505 ~~ a8 305 a0 315865 905 mw : 2 0 oa 40 “0 20 40 mv 00 386, suo B10 300 ats 0 = 7 10460 10450 as os os m7 _ oa 5020s 0 301886 15 2010 2210 ohms 2560 18s 090 260 90160 55100 of a0 36st 10 160190220 10-7 mho 1 34 16 28 26 KMC 1 rr 13 73_Kvc La “20 10 MM 9 _KMc 1a a : 13 : 1 me ten gh ee LY Lr -(F o are VRetel a lie (ec reat tcc ee ae 130 TEMPERATURE CHARACTERISTICS ¥ : 4g a" iE B00 | ; i 3 eo iow 2 $0 § sof —— | ; 2 RS : i FORWARO VOLTAGE 2” § a0 bas eens emer) 05 me 305 00 500 239'1N3712-21 GI Ip Certo TT \ TYPICAL | CHARACTERISTIC CURVE |! SHOWING G AND I AS A FUNCTION OF V I | | T ! | I L4- eo t | iS Iv Vp VW | Ves Ver -6EHigh Power Silicon Rectifier 1500 Volts 250A Avg. The A190 (1N3735 Series) is General Electric’s highly reliable, all-diffused Pi Pact 250 ampere silicon rectifier diode. This series of rectifier diodes is particularly suited to a wide range of industrial applications, expecially those requi FEATURES: ‘Thermal Fatigue Resistant Pic-Pac* Construction Cathode Strain Buffer Soft Recovery 1500 Volt Vans Rugeed Hermetic Package MAXIMUM ALLOWABLE RATINGS AND SPECIFICATIONS TYPICAL APPLICATIONS: Transportation Equipment DC Motor Control DC Power Supplies Battery Vebicles ig high performance rectifiers. C REPETITIVE PEAK! | Now-nePeTiTiVe? REPETITIVE PEA reverse vo.ract | “peacnevense | SCREVERSE’ | ptvense CURRENT rvPes* Van VOLTAGE, Vis | VOLTAGE, Vp tram ® Veam Ty =-40°C to +2007 | 1, = 26°C wo +200°C | Ts = 40°C to 200°C Ts 200°E AI90A—1N3735 100 Volts 200 Von's 100 Volts 100 Volts ‘AI90B_—1N3736 200 300 300 200 ‘A190C_—1N3737 5300 400 300 300 AI90D —1N3738 400 525 400 400 ‘AI90E—1N3739 500 650 500 500 ‘AI90M_— 1N3740 600 800 600 00 ‘A190 700 925 700 700 ‘AI90N —1N3741 800 1050 800 800 AL9OT Ss 900 119s 900 900 ‘A190P_—1N3742 1000 1300 1000 1000 AL9OPA 1100 1400 1100 1100 AISOPB. 1N3743 1200 1500 1200 1200 AIg0PC 1300 1600 1300 1300 AI90PD—1N3744 1400 1700 1400 1400 AI9OPE 1500 1300 1800 1500 ‘Movdels Tied are stud cathode (Forward polarity) types. SpecityALSOR-Tor sud anode (reverse poli) typen Ratings and specifications ae for frequencies from 30 10 400 Ha, except where no Average Forward Current, Iecavy (Te ted herve, Peak One-Cycle Surge (Non-Repetitive), Forward Current, Iysne Miniroum It Rating (See Curve 4), t > I msec. (Non-Repetitive) . Peak Forward Voltage Drop, Vine (Te Thermal Resistance, Rgy¢ (DC)-- - . Storage Temperature, Tar 19 & 36 (500 66 (50 to 400 Hz)... Operating Junction Temperature, Ty Stud Torque (See Mounting Guide) NoTes: 144°C, [navy 400 Hz) "Assumes a heatsink thermal resitance of les than 2.0°C/wat 2 Nonsepetitive voltage and current ratings, as contasted to repetitive ratings, appl +144°C, Single-Phase, Half Sine Wave) 250 Amperes 6500 Amperes '55,000 (RMS Ampere)?® Seconds 250 Amps. Average, 785 Amps. Peak) 1.3 Volts 0.18°C/Watt 0.24°C/Watt 0.30°C/Watt 2 1-40°C to #200°C 40°C t0 +200°C 275 Lb-in (Min.), 325 Lb-in (Max.) 31 Nom (Min.), 36.7 Nem (Max.) {or occasional or unpredictable overloads. For example, the forward suge current ratings are non repetitive ratings that ave Wed i fault coordination work 2 Assumes heatsink thermal resistance of less than L.O°C/watt. 4 *PicPac” isan acronym for Pressure Internal Contact Puckase. 2444NS735-44 ‘A190 DEVICE SPECIFICATIONS : 3 5 i i i 1. MAXIMUM FORWARD CHARACTERISTICS 2, MAXIMUM CASE TEMPERATURE VS. AVERAGE FORWARD CURRENT Hi ed i dbs i ce i ol i 7 = : Hy i a ae 3 : a f i 3. AVERAGE FORWARD POWER DISSIPATION 4. SUB-CYCLE SURGE FORWARD CURRENT VS. AVERAGE FORWARD CURRENT 8 AND I?t RATING VS. PULSE TIME FOLLOWING RATED LOAD CONDITIONS 5. TRANSIENT THERMAL IMPEDANCE — AUNCTION-TO-CASE 202* DEVICE SPECIFICATIONS 1N3735-44 oat a | ls Li 6 MAXIMUM SURGE CURRENT FOLLOWING RATED LOAD CONDITIONS. MAXIMUM CIRCUIT RATINGS DEVICE MOUNTED ON A 5” x 6” x 6” ALUMINUM EXTRUSION (GE#15) TIL Tn ITT 7. TRANSIENT THERMAL IMPEDANCE — SUNCTION-TO-AMBIENT 8 SINGLE-PHASE, HALF-WAVE FORWARD CURRENT VS. AMBIENT TEMPERATURE 2031N3735-44 Ai90 = rs rs Mi ‘THREE-PHASE FORWARD CURRENT VS. AMBIENT TEMPERATURE PR bo | BoP. | ESE ASN ao eo 180 200 10, SIX-PHASE FORWARD CURRENT VS. AMBIENT TEMPERATURE RECURRENT OVERLOAD RATINGS se TTT Te {irae errr | Se i { 11, REPETITIVE OVERLOAD CURVE MEETING NEMA STANDARDS FOR “General Purpose Rectifier Equipments Under 100 KW" AT 40°C AMBIENT (For Overload Conditions Other Than ‘As Shown, Refer To Application Note 200.9) 248DEVICE SPECIFICATIONS MAXIMUM CIRCUIT RATINGS 1N3735-44 A190, DEVICE MOUNTED ON A 7” x 7” x 3/8” ALUMINUM FIN (GE #13) OR A7" x 7" x 1/4" COPPER FIN MINIMUM FIN SPACING 1 INCH ml Te Le a 12. TRANSIENT THERMAL IMPEDANCE — SJUNCTION-TO-AMBIENT Tt FINS MOUNTED VERTICALLY OR PARALLEL TO FORCED AIR FLOW 28 a t ° Lt 13. SINGLE-PHASE, HALF-WAVE FORWARD. CURRENT VS. AMBIENT TEMPERATURE 14. THREE-PHASE FORWARD CURRENT VS. AMBIENT TEMPERATURE REPETITIVE OVERLOAD RATINGS 16, REPETITIVE OVERLOAD CURVE MEETING NEMA STANDARDS FOR “General Purpose Rectifier Equipments Under 100 KW" AT 40°C AMBIENT (For Overload Conditions Other Than ‘As Shown, Refer To Application Note 200.9) 245 15, SIXPHASE FORWARD CURRENT VS. AMBIENT TEMPERATURE1N3735-44 A190 OUTLINE DRAWING L PPS sean ae rane omens rps oe b ° i: uae aes [Pec MOUNTING INSTRUCTIONS Following these installation instructions will result in a rectifier diode-to-heatsink contact thermal resistance of 0.08°C/watt or less, Tr Be sure mounting surface is clean and flat within .001 inch/inch. 2. Mounting hole diameter should not exceed the outside diameter of the rectifier diode stud by more than 1/16 inch, and should be deburred. 3. Use Dow Coming’s DC3, 4, 340 or 640 or GE G322L or equivalent, on mounting surfaces that come in contact with the heatsink, 4, Use only hardware furnished with each rectifier diode. 5. Tighten with a torque wrench, from nut side, to 300 Ibin, 206Silicon RECTIFIERS FAST RECOVERY ~TNGT6S BB SEE PAGE 209 Features: © Fast Recovery Time... 200 Nanoseconds Maximum. © Diffused Construction © For Use in: — Inverters Sonar Power Supplies — Choppers Itrasonie Systems —Low RF Interference Applications — Free-Wheeling Rectifier Applications maximum allowable ratings “Maximum Repetitive Peak Reverse Voltage, T, = —65°C to +150°C, Vay (rep) (Note 1). Maximum RMS Voltage, T; = —65°C. *Maximum DC Blocking Voltage, T, = (Note 1)... *Maximum Average Forward Current, Single Phase, Te = +100°C, To, *Maximum Peak One Cycle Surge Current, 60 Cycle, Nom Recurrent, T; = —65°C to +160°C, Iys:(surge) "Maximum Peak Ten Cycle Surge Current, 60 Cycle, Non-Recurrent, T; = —65°C to +150°G, Ir (surge)... *Maximum Forward Voltage Drop, Ir — 6 A DC, Te = +25°C, Ve. *Maximum Reverse Current at Full Load, Single Phase Fuli-Cycle to+150°C, V, (Note 1) 65°C to +100°C, Vi Average, In = 6 Amp at T- = 100°C, Tnavy *Maximum DC Reverse Current at Rated DC Blocking Voltage, Vu, and Te = 100°C, Ip... - *Maximum DC Reverse Current at Rated DC Blocking Voltage, Vi and Tr = 425°C, Tn. “Junction Operating Temperature Range, Ty “Storage Temperature Range, Tac. *Stud Torque *Maximum Reverse Recovery Characteristics: (See figure below) Recovery Time, ty trees Peak Recovery Current, Iy (recovery) (Note 2) *The asterisk denotes JEDEC (BIA) registered information, —DC-DC Power Supplies (Resistive or Induetive Load) TOE79R TNDEADR INREENAINERRE t 50 100 200-300-400 3370 do. 2100 50 100 200-300 400 6 Amperes 75 Amperes 35 Amperes ————14 Volts —____ 2.0 mA. 1.0 mA. 15 nA. + —65°C to +150°C- —65°Cto £175°C——_> 15 in-Ibs. Maximum +200 Nanoseconds Maximum—= 2.0 Amperes Maximum——= test conditions ‘These rectifiers are factory tested to reverse recovery limits which correlate with EIA registered values, This testing is in accordance with NEMA-EIA recommendations for silicon rectifier diodes and stacks, Recovery characteristic test conditions: Try ~ 5.0 amps; di/at = 50 amps/usec switching rate, and a reverse bins of 50% Vy for 200, 300 and 400 volt grades or. 100% seconds; and I, (recovery) = 5.0 amperes max. " a Lagwecoren V, for 50 and 100 volt grades: T, 25°C; tee La wecove TYPICAL RECOVERY WAVE FORMS NOTES: 1. Rating assumes rectifier heatsin} 6°C/W at max. Ts. 27 Volts Volts Volts 50 nano- 2, Some manufacturers call this Overshoot Current and use the symbol In:1N3879-83, R. 7 | om Ni 4, Tt i 8 4444 we | y | ie . 1. Forward Current Rating vs. Case Temperature NOTE: Case temperature is measured at the center of any flat on the hex base OUTLINE DRAWING INSULATING HARDWARE —_________ DIRECTION OF EASY CONVENTIONAL CURRENT FLOW To-se cities 4 S85 “a fa A] eat Padr © Bromou ncareD veo : D corren renminaL.o16 L THICK, TIN PLATED A ee @erass wasien,oss THicK COMPLIES WITH MicKEL PLATED EIA REGISTERED OUTLINE DO-4 @ mick wasHERs, Two, 625 0, 204 1D, 005 THICK @ TEFLON WASHER,270 00. 204 1.0,,.080 THICK AVAILABLE UPON REQUEST SYMBOL NOTES: 1. Angular orientation of this terminal is undefined. 2, 10-32 UNF-2A. Maximum pitch diameter of plated threads shall be basic pitch diameter (1607", 420 MM) Ref. (Screw thread standards for Federal Services 1987) Handbook H28 1957 PL 248Silicon Rectifiers FAST RECOVERY Features: © Fast Recovery Time. ..200 Nanoseconds Maximum © Diffused Construction © For Usein: — Inverters — Choppers —Low RF Interference Applications — Free-Wheeling Rectifier Applications maximum allowable ratings “Maximum Repetitive Peak Reverse Voltage, T, ~ +150°C, Vinx (rep) (Note 1) Maximum RMS Voltage, T; = —65°C to +150°C, V, (Note 1). —65°C to ‘Maximum DC Blocking Voltage, Ts = —65°C to +100°C, Vx (Note 1)... : *Maximum Average Forward Current, Single Phase, ‘T= +100°C, I “Maximum Peak One Cycle Surge Current, 60 Cycle, Non- Recurrent, T, = —-65°C to +150°C, Ip (surge)... *Maximum Peak Ten Cycle Surge Current, 60 cycle, Non- Recurrent, T = —65°C to +150°C, Ip (surge) *Maximum Forward Voltage Drop, Iy = 12 ADC, Ty. ~ +25°C, Vy “Maximum Reverse Current at Full Load, Single Phase Full ‘Average, In = 12 Amp. at Te = +106°C, Tavavy *Maximum DC Reverse Current at Rated DC Blocking Voltage, Vi, and Te = +100°C, Tr. *Maximum DC Reverse Current at Rated DC Blocking Voltage, Vaoand Te ~ +25°C, Tp... ‘Junction Operating Temperature Range, T, *Storage Temperature Range, Ty. : *Stud Torque Maximum Reverse Recovery Characteristics: (See figure below) Recovery Time, t,..... Peak Recovery Current, I, (recovery) (Note 2) “The asterisk denotes JEDEC (EIA) registered information — Sonar Power Supplies Ultrasonie Systems —DC-DC Power Supplies (Resistive or Induetive Load) 1IN3009,R IND890R INDEST.R INDO2R INDBPI.R 50 100-200-300 400 37 140210 50 100 200-300 400 Amperes 150 Amperes 70 Amperes > 14 Volts ——____ 5.0 mA 3.9 ma ——___- 25 mA. 68°C to + 150°C. 65°C to +175°C——— 15 in-Ibs, Maximum: 200 Nanoseconds Maximum 2.0 Amperes Maximum—— test conditions ‘These rectifiers are factory tested to reverse recovery limits which correlate with EIA registered values, This test ing is in accordance with NEMA-EIA recommendations for silicon rectifier diodes and stack Recovery characteristic test conditions: Ip, = 5.0 amps; di/at of 50% Vx for 200, 300 and 400 volt grades or 100% Vy for 50 and 100 volt grades: seconds; and I, (recovery) = 5.0 amperes max. Lager 25°C: ty, = 150 TYPICAL RECOVERY WAVE FORMS NOTES 1. Rating assumes rectifier heatsink <6°C/W at max. Ts 249 Volts Volts Volts 50 amps/usec switching rate, and a reverse bias 2, Some manufacturers call this Overshoot Current and use the symbol Tos.1N3889-23, R a 1, Forward Current Rating vs. Case Temperature NOTE: Case temperature is measured at the center of any flat on the hex base, OUTLINE DRAWING DIRECTION OF EASY CONVENTIONAL ‘CURRENT FLOW INSULATING HARDWARE er De® O® az) eecseae er, Ve) ogee ore 980 R iad > Lj 7 COMPLIES WITH OR Ta mateo EIA REGISTERED OUTLINE DO-4 @BRASS WASHER, O35 THICK NICKEL PLATED @uica washers, TWO, 625 ‘QD, 204 1.0., 605 THICK @ TEFLON WASHER,270 0.0. 204 1.0.,.080 THICK AVAILABLE UPON REQUEST NOTES: 1. Angular orientation of this terminal is undefined. 2. 10-32 UNF-2A. Maximum pitch diameter of plated threads shall be base pitch diameter (.1607", 420° MM) Ref. (Screw thread standards for Federal Services 1967) Handbook H28 1957 Pi 250Silicon Diodes Features: ¢ Fast Recovery Time—200 Nanoseconds Maximum © Recovery Characteristics match the High Frequency capability of the new General Electric High Speed SCR’s such as the C140 and 141, the C155 and C185 © For Use in: — Inverters — Sonar Power Supplies —Choppers — Ultrasonic Systems —De-D — Low RF Interference Applications Power Supplies — Free.Wheeling Rectifier Applications maximum allowable ratings (Resistive or Inductive Load) 1N3H99,8 1NI900R INAPOL,R IN2902.R INBPOR.R “Maximum Repetitive Peak Reverse Voltage, T; = —65°C to +150°C, Vise (rep) (Note 1) oe 50 100200 9 400 Volts Maximum RMS Voltage, T; = —65°C to + 150°C, V,. 3570-140 -210—280. Volts *Maximum DC Blocking Voltage, T, = —65°C to +100°C, Vi (Note 1) fi cesetee . Seer | 50. | 1001 200 300-1 | 400 vols “Maximum Average Forward Current, Single Phase, Te ~ +100°C, To : - : 20 Amperes —————- *Maximum Peak One Cycle Surge Current, 60 cycle, Non- Recurrent, T; = —65°C to +150°C, Iny (surge). 225 Amperes————- *Maximum Peak Ten Cycle Surge Current, 60 cycle, Non- Recurrent, T; = ~65°C to +-150°C, Ip. (surge) 120 Amperes. °Maximum Forward Voltage Drop, Iy = 20 ADC, T,- = +25°C, Vs "Maximum Reverse Current at Full Load, Single Phase Full- Cycle Average, In = 20 Amp. at Te = +100°C, Ipigyyeeee22+ Maximum Effective Thermal Resistance (Junction to Case), 0:. *Maximum DC Reverse Current at Rated DC Blocking Voltage, 1.4 Volts: +100 ma ——— 1 c/w Vu, and Ty = +100°C, Tn cere 6.0 mA— “Maximum DC Reverse Current at Rated DC Blocking Voltage, Vyand Ty = +25°C, In... cecetteteeeeees 50 pA. 65°C to +150°C —— 65°C to 1175°C = 30 in-lbs, Maximum ———+ *Junction Operating Temperature Range, Ts »Storage Temperature Range, zi *Stud Torque ie 5 * Maximum Reverse Recovery Characteristics: Recovery Time (Note 2). ty... Peak Recovery Current (Note 2), I; (recovery) (or Overshoot Current, Iox) Saud ‘The asterisk denotes JEDEC (BIA) registered information, =— 200 Nanoseconds Maximum—» +——3.0 Amperes Maximum ——~ NOTES 1. The ratings assume the rectifier heatsink thermal resistance to be 6°C/W or less at maximum junction temperature 2, These rectifiers are factory tested to reverse recovery limite which correlate with BIA registered values. This testing is in accord: ance with NEMA-EIA recommendations for silican rectifier-diodes and. stacks Recovery characteristic test conditions: Iny = 5.0 amps: di/dt = 50 amps/asee switching rate, and a reverse bias of 50% Vs for £200, 300 and 400 wolt grades or 100% Vx for 50 and 100 volt grades; Te = 35°C; ty ~ 180 nanoseconds; and In: (recovery) 25113899-3903, R Tuva AVERAGE FORWARD RENT 1, Forward Current Rating vs. Case Temperature Note: Case temperature, Ts is measured at center of any flat on hex bas OUTLINE DRAWING eS eee escola Pra ey man TES crea A TERM ® pee: ed E [se 4| ake + [ee soo] ‘eae Boe eae Fi_|.060 mise ee . MOSES eve rHREADS To EXTEND TO WITHIN 2-2 [st race ase Fe saa monccrnt, puff eo Sos ose ease ecient nt baee Les Pere ar Eiaemerern 7 : = SESH Renae rn no 252Fast Recovery Rectifiers Features: Oo © Fast Recovery Time—200 Nanoseconds Maximum © Recovery Characteristics mateh the High Frequency capability of the new General Electrie High Speed SCR’s such as the C140 and 141, the C155 and C185 © For Usein: — Inverters — Sonar Power Supplies — Choppers — Ultrasonic Systems —Low RF Interference Applications — DC-DC Power Supplies — Free-Wheeling Rectifier Applications maximum allowable ratings (Resistive or Inductive Load) 1Na909,8 INGPIOR IND#IIR INSNIZR INDIO *Maximum Repetitive Peak Reverse Voltage, T; = —65°C to +150°C, Vinw(rep) (Notel)....... 20. ee 50 100 200-300-400. Volts Maximum RMS Voltage, T; = —65°C to +150°C, V,. : 85 T1409 210— 280. Volts. “Maximum DC Blocking Voltage, Ts = —65°C to +100°C, Vs (Note 1) ceree 80 100-200 800-400. Volts *Maximum Average Forward Current, Single Phase, Te = +100°C, In. Ei “Maximum Peak One Cycle Surge Current, 60 eycle, Non- Recurrent, T, = 65°C to +150°C, Iny (surge) *Maximum Peak Ten Cycle Surge Current, 60 cycle, Non- Recurrent, T; = ~-65°C to +150°C, Ire (surge) A *Maximum Forward Voltage Drop, Ir = 30 ADC, Ty = +25°C, Vr *Maximum Reverse Current at Full Load, Single Phase Full-Cycle ‘Average, I = 30 Amp. at Te = +100°C, Trias 15.0 mA Maximum Bifective Thermal Resistance (Junction to Case), @,.< -————— 1.0° ¢/W > *Maximum DC Reverse Current at Rated DC Blocking Voltage, Va,and Ty. = +100°C, Tr. *Maximum DC Reverse Current at Rated DG Blocking Voltaxe, Vi,and Ty = +25°C, Tn ‘ “Junction Operating Temperature Range, T; *Storage Temperature Range, Ty. *Stud Torque . * Maximum Reverse Recovery Characte Recovery Time (Note 2), ty, : +200 Nanoseconds Maximum—+ Peak Recovery Current (Note 2), Tx (recovery) (or Overshoot The asterisk denotes JEDEC (EIA) registered information, 30 Amperes ————~ 300 Amperes———- 160 Amperes ————— 1.4 Volts 10.0 mA. 80 WAL 65°C to -+150°C ———- BC to 175°C ———+ 80 in-Ibs. Maximum ———+ 8.0 Amperes Maximum ——= NoTES: 1. ‘The ratings assume the rectifier heatsink thermal resistance to be 6°C/W or less at maximum junction temperature, 2, These rectifiers are factory tested to reverse recovery limits which correlate with EIA registered values, This testing is in accord nce with NEMA-BIA recommendations for silicon rectifier diodes and stacks. Recovery characteristic test conditions: Ira = 5.0 amps: di/d 20, 300 and 400 lt grades or 100% Vy or 50 and 100 volt 6.0 amperes max. '50 amps/asee switching rate, and a reverse bias of 50% Vy for des; Fr = 25°C; ty. — 150 nanoseconds; and Ty (recovery) 2531N3909-13, R Note: Case temperature, Tey eke Tewmerarune—e 1, Forward Current Rating vs. Case Temperature INCHES: TWLIMETERS! measured at center of any lat on hex base. ‘OUTLINE DRAWING [SYM8OLT yan, | MAK MIN. | Max. NOTES) ir nteneeoan a 450) T143] reps! ® 3532 fi ¢ 2.03] [$0 i604 € 45 ‘rene oh ta 2.92 | 8.08 seams at sores zi 182 oe NEBhBLete rome nos vo exreno To winsin 2-02 a 2 Anousn GRiETANOn GF TERMINAL i UNDEFINED. 336 EUEEe unre aa wagner Cu Ten OF ATED 559) 632 Tap esSeeutntes Srapagps ron reoeratsences ro72| 11.51 _ezaiannoe has Bor 356 | 4.45. EAINENA Statonno oUrLMe, NEMA 951-18 R9-24 us ISopSTIGhamowane ts AvaiU ABLE UPON REQUEST. 254Silicon RECTIFIERS ‘The A190 (1N3735) Series is General Electric's highly reliable, alliffused Pic Pac ho 250 ampere silicon rectifier diode The proven benefits of G. E."s high current rectifier diodes are: * Choice of stud anode or stud cathode types Thermal fatigue resistant ~~, ireut uniformity of product « Higher surge current capabilities J} RATINGS AND SPECIFICATION: ‘INAO¢4 INADAS TNO4G 1N4D47 TN4OAB 1N4DE IN4O50 1N4O5) 1N4O52 1N4053 INAOS4 1N4055 1NAOSE *Maximum Allowable Transient Peak Reverse Voltage, Viu(non-rep) (non-repetitive, 8.3 millisecond half sine wave pulse) ° 100 200 250 300 350 400 525 50 890925 1050 1175 1300 “Maximum Allowable Working and Repetitive Peak Reverse Voltage, Vou (whe) & Ves (rep), and DC Blocking Voltage, Ve" 50 100 150 200 250 300 400 500 G00 700 800900. 1000 *Maximum Allowable Average Forward Current, [, (AV! (single phase, 120°C ease temperature) or *Maximum Allowable Peak One-Cycle Surge Current, I.» (60 eps single-phase basis, non-repetitive) — -————________5000 amperes. ————_____. Minimum 1"t Rating (non-repetitive) 50,000 amperes" seconds (see Chart 6). > *Maximom Peak Forward Voltage Drop, Vi, (1o==275 amps DC, Teat20"C) $$$ 15 volts. ——___________.. *Maximum Full Load Reverse Current, Tuas» (full-eyele average, 120°C ease temperature, single amperes ————_______. hase) ———_ miliamperes. ——________. Maximum Thermal Resistance, Bus Gumetion to care) $$ 80/wate ——___. “Storage and Junction Operating ‘Temperature, 7 8 to 4190°¢ —____________. Stud Toraue"—Maximum es inchpounds (275 hacer) Minimum 21 ineh-pounds (320 kg-em) <> NOTES: "Models listed are stud cathode (forward polarity) types. Order IN4O__R for stud anode (reverse polarity) types. Ratings and specifications are for frequencies from 50 up to 400 eycles/second, except where noted differently. “Non-repetitive voltage and current ratings, as contrasted Lo repetitive ratings, are ratings which apply for occasional or unpredictable overloads. For example, the forward surge current Tatings are non-repetitive ‘ratings that are used in fault co-ordination work. Rating assumes a rectifier diode heat sink dissipation of 2.0°C/watt, or Tess Rating assumes 4 rectifier diode heat sink dissipation of 1.0°C/watt, or less "Use of a silicone grease (G-E #6623) between the rectifier base and heat sink is recommended. 2555 es] sal fs \oe Po ee 1, MAXIMUM FORWARD CHARACTERISTICS 2. AVERAGE FORWARD POWER DISSIPATION 1. MAXIMUM CASE TEMPERATURE V5. VS. AVERAGE FORWARD CURRENT (Tc = +190"C) "AVERAGE FORWARD CURRENT tL att “ * 5. maximum sunt Comte FOUOWING arn st oF cmon ow sata iano COnomnons Gee TASC TO. 1190) 4. mantine tana ESANEE cy SS aT / © t 1 Wes 88800 Hse sneconos pe —steonos or OUTLINE DRAWING eon TT TT im rong or omens | pea pominenme a RT iL ee = as oe = He h=== ==: eee peoee-se | -ymosns | vernon [ a : (oan coumnons al a c= 258Germanium 1N4090 Diode The General Electric Germanium Tunnel Mixer Diode - Type 1N4090 is an alloy-junetion Tunnel device designed for use as UHF and microwave mixer Exhibiting a nonlinear VI characteristic, going through zero at the origin, makes this unit also very attractive for use as low level detector, The IN4090 features very low capacitance, series resistance, video and LF, impedances as well as extremely low turn-on and turn-off characteristics. The 1/f noise contribution is much lower than in point-contaet mixers. absolute maximum ratings: (25°C) cuniess otherwise specitied) Forward Current (85° to +100°C) Sma L Reverse Current (-55° to + 100°C) 3 ma re Lead Temperature 1/16" + 1/31" 260°C dom | | | from case for 10 seconds fas ae Storage Temperature Range = 55°C to + 100°C TB Tama electrical characteristics: (25°C) wntes omerwise pe Min, Typ. Max. Total Terminal Capacitance : 10 Ls pid Total Series Resistance : 45 10.0 Total Series Inductan. g 0.2 : ah Peak-Point Current 130 160 180 ua Peak-Point Voltage 30 2 78 my Forward Voltage at ly =180 ua 430 : : mv Forward Voltage at fy =I ma 500 : s my Reverse Voltage at Ix 80 100 120 mv Reverse Voltage at Iga, =5 mia 10 : 250 my Forward Voltage at frm, =5 ma 520 : : my Valley Voltage 275 : : my Peak to Valley Ratio 41 : : ratio Recovery Time* : o : nsec "The recovery time is measured (o a reverse current of 1 ma when switching from 0.1 volt forward to 0.4 volt reverse from a 50 source. Since this diode does not exhibit charge storage, the recovery time is determined by the charging time of the total device capacity 257Silicon Signal Diodes ‘This family of General Electric Double Heatsink diodes are high conductance, high speed low capacitance switching units for core and hammer driver circuits and general purpose applications. These diodes incorporate an oxide passivated planar structure built ina high resistivity, epitaxial layer grown on a low resistivity substrate, ‘The 1N4150 and 1N4606 feature controlled conductance,with minimum and ma mum forward voltages at five levels of forward current. The 1N4450 offers controlled conductance at four levels of Ty from 100A to 50mA with amaximum voltage of 1.0 volts at 200mA. This closely controlled conductance is necessary for the design of clamping and logic circuits where tight tolerances on voltage levels are required. absolute maximum ratings: (25°C) ymuso NAO Nadas Vet Reverse Fa so 10 vos ona "Rverage Rectified mA | Recurrent Peak Forward mma Forward Steady-State DC ma Peak Forward Surge (1 see, pols) ——— ‘Amps owtowon a tne Bissipationt ——— 50 ——+ aw Tempera Operating 05 t0 4200 °c Storage ob to +200 ——— c electrical characteristics: (25°C) (untess otherwise specified) aso nase sais Forward Whose In pon io i na Tir = 10024) ve “ono vi edo stato tt ve Gia) baa] ve ao teow] 4D vw so 20180920 ve 1000 1000 G0 «1000 ve 100 treakdownVahooe in eA) ar) (= 30004) B 6 Wea) he so (iE gover, = 4150°0) h BY WE sov) h 100 100 (Wr = 80V, 7, = +100°0) n Fs (via 50, t= 5180°6) h 100 (is tov) ih 250 258 ING148-49_SEE PAGE 205 | mv mv mV mV mV mV mV. Volt Volt1N4150 1N4450 ‘1N4606, electrical characteristics: (25°C) (unless otherwise specified) waeso waiso inasoe Mi, Mon Min, Mon Min, Mox a ‘ 25 25 oF 10 to 200mA, 1, = O.1hy, Fig 8) te ‘ as 200 OAT, Fi tee 6 ns Oma, Ts ama, Fig. 1) te 6 ns 10mA,In= Ima, Pigs. 1,2 & 6) te 6 as Ur 10 to 200mA, Uy, = OD, Fig 4) tee ‘ ns y= In = 200 to 400mA, alr, Fig. 4) tee 6 ns (ly = 200mA, ty = 0.4 naee., ty = 100 nsee,, Ver = 1.0V, Fig. 5) ter 0 ms a pc NOTE: 1: STORED CHARGE When a forward biased diode is subjected to a reverse voltage step a reverse current will Now for a short time as-a result ofthe stored chare consisting of minority carriers in the vicinity of the junction. The typical waveform of reverse current va time for 2 diode subjected toa large reverse voltage fu shown in Figure 1. The time fequired for the diode to recover its reverse blocking condition wil depend on the quantity of chars stored and the rate at which the charge is removed by recombination intde the dole and by current fowing im the external circuit, Conventionally, the spec! of = diode fs characterized by the reverse recovery time, ty» measured to’ some arbitrary current level as in Figure 1. However, for higher speed diodes reverve recovery time is not & satisfactory parameter for characterizing the speed of the diode since It tr dependent ‘on arbitrary cireuit conditions and Is very dependent on the construction of the text clocuit Stored change, on the other hand, Is measured by intesvating the reverse car TYPICAL REVERSE tent of the diode (as shown by the shaded area in Figure 1), and fs consequently mush RECOVERY WAVEFORM less dependent on the construction of the tas eizeuit and un erbitrary circuit condivons, Stored charge is a more ideal parameter for characteriing the speed of a dieue since FOR A HIGH SPEED DIODE it represents an intrinsic characteristic of the diode and canbe measured with wood reproducibility on low cost instraments which have aiect meter readowt Stored charge ean be correlated with reverse recovery time measurements on & specific ttt figs Typical correlation curves are shown on the graph below References: 25914150 “ frremyaro ert Figure 3 a Figure 4 02 5002, pS son 4500, PuLse CEN ovr. 500 SCoPE Figure 5 260 1N4450 1N4606 Tee s61a/ 3576/8177 Sawecing scope OF we seo eQUVALENT peta Line ea ° a Piel | : TEK 109 x109 [ren 201 scen ij PULSE DIODE SWITCHING |— ae GENERATE Hilla WIGH CURRENT REVERSE RECOVERY TEST cincuIT .i tt 1N4150 FoRwaRD volvace Giteacransties | “IN4450 7 — thasoe | ~ | Lanasos "CT retell T v0 iaaso }— | Seeriae waa Be ouvewr sen | Figure7 0 , 1 eee | SS TEMPERATURE COEFFICIENT 26 SSS versus — i FORWARD. CURRENT -24 - inseoe g ~ Naiso_| | S-22) : é | = | 57h 2-20) 1 > tho 7 Tice oo Was | ' nia I or 1 1 10 ‘00 TF INm A HEATSINK. STEADY SPACING. ‘STATE. FROM END, THERMAL ‘OF DIODE | RESISTANCE ‘BODY *c/mw BHD DMO 062" 250 700 250" 239 380 800" 380 480 igure 9 261Silicon Diodes [_inais4 SEE PAGE 205] 1N4151,2,3 ‘This family of General Electric silicon signal diodes are very high speed switching diodes for computer circuits and general purpose applications. These diodes incorporate an oxide passivated planar structure, This structure makes possible a diode having high conductance, fast recovery time, low leakage, and low capacitance combined with improved uniformity and reliability. These diodes are contained in two different packages; - double heat sink miniature package and milli-heat sink package and are electrically the same as their equivalent types in each of the different packages. L (see page two for groupings of electrically equivalent types in each of the packages). PLANAR EPITAXIAL PASSIVATED ‘ith Controlled Conductance Glimanias DOU HEATSNN DIODE OND) Tsar Iwarstcnatsa nase reo paw} — gone bt | eos Lt oe Spey Spe q as ae) sotem on : Digan, SOOMW @ 25°C free air Dinipains SOW @ 25°C free air eats Z8GmW°C for temp. above 25°C Durte 285mW/"C for temp. above 25°C amb. based on max, = 200°C amb, based on max. T) = 200°C wena | vwetsa FEATURES Avpere| Nasa = — ‘tesaa| thasse wears Sai Serco, | samy sare ota eles pOK BD rare Tinton. Ve speed oF 8 ‘oor mr Forward Current Levels © rr aba aan 7 Cepoiones ef 2 maximum ele sat —| ae ore fav | __t-o Towa Dinipton wo 500m efe 250° | a0 are | #80 : } a soo" [a0 00 [a0 4 eee = “+See Figure 5 for thermal resistonce for short pulses. eet al RILS-1900 reavirements ele {Thypower nin ed ons sin in pw Figure 1 262absolute maximum ratings: (25°C) (unless otherwise specified) Volese Reverse Comsee ‘Average Rectified Recurrent Penk Forward Forward Steady State DC Peak Forward Surge (1 usee. pulse) Dissipation electrical characteristics: (25°C) (uniess otherwise specified) By (r= 10044) Ve 25024) ve 1mA) ve 2ma) ve (is = 10mAy ve 20mA) ve 50mA) ve Reverse Curent I a he i tee 10mA, Va = 6V, Ire =1mA, 100 ohms, Figs. 9 & 10) tee Peak Forward Velteget Capesitnen (We=0v)t o ‘Stored charge (Note 1) (r= 10mA)§ (See Fpures 9and 10) Qe sa ype aatae 1N4454 1N4532, 3, 4 reas ames) aNats2 NASI Ho nasa mosis NASI 1NAS34 map 50 50 0 50 Volts 150 mA 450 mA 200 mA 2000 mA 500 - 85 t0 4200 ———> 65 to $200 + rneasar masa 6 200 100 20 2 anaist 6 1.00 50 50 22 {amv pak sauare wave, 01 utc. pute width, 5 t0 100 As repetitive rat, generator ty = 20 mse Capectance as menzurcd on Boonton Mode 263 2 1N4151, 2, 3 ais nasa Min Mos. B Volts 0490 0.550 Volts 0.530 0.590 Volts 0500 0.677 Volts 0.620 0.700 Volts 0.700 0.10 Volts 0740 0.880 Volts Volts nA aA 50 nA, 50 nA 4 see Volts 2 pF 32 pe1N4151, 2, 3 1N4454 14532, 3, 4 Figure 4NOTE 1; STORED CHARGE When a forward biased diode is subjected to a reverse voltage step a reverse current will fow for a short time as a reault of the stored charge consisting of minority carriers in the vicinity of the junction. The typical waveform of reverse current vs time for a diode subjected to a large reverse voltage is shown in Figure 8. The time required for the diode to recover its reverse blocking condition will depend on the quantity of charge stored and the rate at which the charge is removed by recombination inside the diode and by current flowing in the external cireuit. Conventionally, the speed of diode is characterized by the reverse recovery time, ti, measured to. some arbitrary current level as in Figure 8. However, for higher speed diodes reverse recovery time is not & satisfactory parameter for characterizing the speed of the diode since it is dependent ‘on arbitrary cireuit conditions and is very dependent on the construction of the test circuit. Stored charge, on the other hand, is measured by integrating the reverse current of the diode (as shown by the shaded ares in Figure 8), and is consequently much lesa dependent on the construction of the test cireuit and on arbitrary eireuit conditions. Stored charge is a more ideal parameter for characterizing the speed of a diode since it represents an intrinsic characteristic of the diode and can be measured with good ‘reproducibility on low cost instruments which have direct meter readout. Stored charge can be correlated with reverse recovery time measurements on a specific, test jig: Typical correlation curves are shown on the graph below. References (1) SEDEC Proposed Method for Direct Metsurement of Diode Stored Chante, J5-2-6611 (2) "Measurement of Stored Charge High pect Dagens’ EP. Sylvan Appleton Note $290.80 (aval 1N4151, 2, 3 1N4454 1N4532, 3, 4 TYPICAL REVERSE RECOVERY WAVEFORM FOR A HIGH SPEED DIODE Figure 8 TEK 56IA/ 3876/3777 SAMPLING SCOPE OR Figure 9 60 n SEC EQUIVALENT DELAY LINE eA 8 xs TEK 109 X10 TEK 291 PULSE PROBE! prope swiTcHiNG |! GENERATOR| TEE TIME TESTER (oy weasuneo n sun euzerowies tons, iy weasonee me z g Lilt ‘tonto oanoe—e) — co eonoums”Silicon Diodes MULTI-PELLET ‘These General Electric high speed multi-pellet diodes are for use in computer circuits and general purpose applications. They consist of one, two, three, or four planar passivated epitaxial diode pellets in series, mounted in a subminiature double heatsink package. This structore makes possible stabistors having controtled conductance and low leakage. ‘This controlied conductance is necessary for the design of clippers, de coupling circuits, clamping circuits, meter protectors, bias regulators, and other types of circuits that require tight tolerances on voltage levels. ‘The MPD200, 200, and 400 series may be used as signal limiters or Tevel shifting diodes in transistor logie circuits, and also as de coupling devices in de amplifiers and digital circuits like multivibrators, Other lower cost stabistors are the STB5G7, 8, 9 devices. See publieation 75.46. absolute maximum ratings: (25°C) 1N4156,7 | 1N4453_| vwatse7wroape wre000—HeD4OO — Tipton » Sees w/t iia renpartre electrical characteristics: (25°C) (unless otherwise specified) er) = x vm @ $. rr a Py Sits [Re |e ae} — 2 fas | $5 2 : oe aan —forg tect taes | — or —| ge = == ae : er et : Faced Wn Wi va 7 Table 1 Toble 2 Toble 3 Table 4 Toble 5 Table 6 Toble 7 Toble 8 Table 9 = pee aLiles 1N4156, 7 @) For typical temperature cotiients see Fig. 2 71N4a53 (2) Stored Charge ig measured in the cireut given in MIl-STD-750, 19 January 1962, Method 4061, In ths cireull (See Pig. 4) Dy should be an ultra fast recovery diode having a stored charge less |_1N4829, 30 thas. of that for the diode under tet, with breakdown voltage greater than Y, the tarmof Taryeqzg Pulse voltage. D. should be high speed” planar epitavial diode {INS1G0) with raped tarmon time: The puise used for measuring stored charge should have Ve equal te 10 weiter Psher tne MPD200 <05 nanosecond, a repetition rate af 100 kilz and a width greater than 10 nanosecond. The stored charge is first measured witn no current (J, In tethod 4061) and then with fy = t'ma (hein MPD300 method 4061). The stored charge specified ts the difference between these two readioye (3) The Tektronix diode recovery time plug-in unit, type S, can be used for approximate stored MPD400 charge ee | measurements"™*| = . ; mill ‘The stored charge reading in the type S ete cone, vunder the ne; conditions wes! —*" atma, [= Ie=2mA, measuring toVr= 0 volts, will be up to a'tactor of Blower than*” the stored charge measured according. to method 4061, because T of the Tower | Tate of charge, withdrawal" ste using the type 8, aap | Lu I LET] ee = +[vourace |- vareuuer/| || specter source " ct a our Figure 4_— TYPICAL APPLICATIONS N4453 (Also—See Multi-pellet Diode Application Notes 90.60 and 90.61) 1N4829, 30 | _Level-shifting in DTL Circuits 1N5179 +ev ‘MPD200 a, MPD300 6.5K MPD400 MPO 300 Wecoe 2N708 os sy Figure 5 For the NAND gate in Pig. 5; the MPD300 mult-pellet diode provides for level-shifting so that only one power supply is required. Due to its high stored charge and the subsequent long recovery time, the MPD300 speeds up the transistor turn-off ime by. providing it with a reverse base current large enough to draw the stored charge out of the base of the transistor. ‘Turnoff time is reduced by a factor of 2 to 8 compared to the use of 3 ordinary diodes in series. When a faster transistor, like the 2N2968 is used, similar improvement in performance is achieved. For a slow non-gold-doped type transistor, like the EN307S similar improvement is also obtained provided that a resistor in the vicinity of 1.5K is connected from the base to ground, In multilevel logic application, « propagation delay time of about 10 nsces and with a fan-out of 1 to 8 i attainable ‘Shen 2N 708 or 22068 transistors are used, Split Power Supply and Voltage Regulator for Transistor Circuits R at Ry Rp h me Sea 620 69 Sma —> s + + s Bs é a i" © ue. neo Hl “ . 268 \ 300 200 . iE % Te av jefe ° b fs bs % gat é 's %s eevee nal wav 69K 2NS4I5, os Aa N34 2N3415 Ley eo] + + 300 5 woo || woo] te |S% 400 300| als’ sma Figure 6 ‘The very simple voltage regulator in Fig. 6a provides good regulation against change in voltage source (about 4%) and has 2 low output impedance equal to dynamic Impedance of the multi-pellet diode, which is approximately § ohms for this circult Ecleney ia high compared to & resistive voltage divider regulator Zor the same output impedance. The latter regulator also zrves no regulation against change in voltage source. In Fig. 6b, better regulation against change in voltage source is acquired Uy the tse of a double diode shont type configuration. Output smpedance ia the same as in Fig. 6a, ficiency is lowered some- ‘what but a much better regulation against change in voltage source is achieved (about 0.07%) In Fig. Ge and d an emitter follower is added to the output. Output impedance is a little higher than the 2 preceding circuits, but higher eliiency and higher regulation against change in voltage source are obtained. 268

Ge Semiconductor Data Handbook 1977

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