34

2005

1
1

Vol.34, No.1
January 2005

RARE METAL MATERIALS AND ENGINEERING

Al

( 100084)

: Al

SEMEDS AES Al
AES
Al 40% Al

: Al
TN 304.1

1002-185X(2005)01-0143-03

Al

SEM

Al EDS

AES Al

Au/Al

AES PHI-660 Ar+

[1 2]

16 nm/min

[3]
1 Al
Al Al
Al

1
Al 100 m
70 m

FBrCl
Al [4] Al2 O3

1
Al

40%70

SEM AES 8?

Fig.1 Outline of the chip

Al 100 m 70 m

SEM Al

25 m

2003-05-162004-09-10
1978 , 100084010-62772724
010-62772724chenguohai00@mails.tsinghua.edu.cn

 144

EDS

34

Al O Ti Si

3 AES
Fig.3 Analysis area, white rectangle
2 Al

Al

Table 1 Element of Al bondpads(at%)

Elements
C
O
Al
Si
Ti
Total

4 000

Particles on the surface of Al bondpads

After sawing
2.73
4.06
10.69
90.32
89.31
1.46
1.44
100.00
100.00

Before sawing
2.78
2.48
10.59
92.47
89.41
1.01
1.26
100.00
100.00

1 Al
Al Al
Al
Al
AES

Content/cps

Fig.2

2 000
0

Si

C
Al

2 000
4 000
O
6 000
0

400

800

1 200 1 600 2 000

Kinetic Energy/eV
4 Al AES
Fig.4 AES survey, afterargon sputtering 3.2 nm

Al at%

Table 2 Atomic concentration of Al bondpad versus depth

Depth/nm

Al

Si

3.20.2 min
83.25.2 min
163.210.2 min
243.215.2 min
323.220.2 min

27.96
33.08
40.87
30.11
35.23

44.55
38.52
37.31
36.11
37.57

13.01
22.56
16.50
28.75
20.00

14.48
5.84
5.32
5.03
7.20

Al 3
AES
AES Al

Al Depth
Profile
30 min 480 nm

Ar+ 0.2 min 3.2 nm

AlOSi C 5

Al

5 40%

Al

0.5 m Al

AlOSi C 4 80 nm

AlOSi C
10 min15 min20 min

Al Al

0.3 m

Al Al2 O3

2 Al

0.32 m

Al

35% Al

: Al

145

Al2 O3

3)

Al

Al

70

Al
Si
O
C

Atomic Concentration/%

60
50

[1]

References

Andrew J G. Strandjord, Scott Popelar, Christine Jauerning.

40

Interconnecting to Aluminum- and Copper-Based Semi-

30

conductors (Electroless-Nickle/Gold for Solder Bumping

20

and Wire Bonding) [J]. Microelectronics Reliability, 2002,

10

42: 265~283

0
-10

[2]
0

10

15

20

25

30

35

Ramminger S, Seliger N, Wachutka G . Reliability Model

for Al Wire Bonds Subjected to Heel Crack Failures [J].

Sputter Time/min

Microelectronics Relsiability, 2000, 40:1 521~1 525

5 Al AES 480 nm

[3]

Fig.5 AES depth profile, after argon sputtering 480 nm

Petzold M, Berthold L, Katzer D et al. Surface Oxide Films

on Aluminum Bondpads: Influence on the Thermosonic
Wire Bonding Behavior and Hardness [J]. Microelectronics
Reliability, 2000, 40: 1 515~1 520

[4]

Tomohiro Uno, Kohei Tatsumi. Thermal Reliability of

1)

Gold-Aluminum Bonds Encapsulated in Bi-Phenyl Epoxy

2) Al

Resin [J]. Microelectronics Reliability, 2000, 40: 145~153

Influences of Surface Oxide Films of Aluminum Bondpads on Gold Wire Bonding

Chen Guohai, Liu Yudong, Ma Jusheng
(Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, China)

Abstract: During semiconductor manufacturing, the gold wire bonding is influenced by the native Al oxide film, and Au wire could not
bond to Al bondpad.In this paper, SEM, EDS and AES are used to investigate the bondpads. It's found that the elements on the surface of
Al bondpads after sawing are consistent with those of before sawing. So swilling techniques does not affect the wire bonding. The AES
results show that there is 40% O element in Al bondpads even though at the depth of half of the Al bondpad height. Consequently, Al has
already been oxidized by O. The Al oxide film which can prevent the bonding and the diffusion of O to Al causes the failure of wire
bonding.
Key words: wafer; Al bondpad; wire bond; oxide film

Biography:

Chen Guohai, Candidate for Ph. D., Division of Electronic Materials & Packaging Technology, Department of Materials
Science & Engineering, Tsinghua University, Beijing 100084, P. R. China, Tel: 0086-10-62772724, Fax: 0086-10-62772724,
E-mail: chenguohai00@mails.tsinghua.edu.cn