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B 11/00
HFA16PB120
HEXFRED
TM
Features
VR = 1200V
BASE
CATHODE
Ultrafast Recovery
Ultrasoft Recovery
Very Low IRRM
Very Low Qrr
Specified at Operating Conditions
VF(typ.)* = 2.3V
IF(AV) = 16A
Qrr (typ.)= 260nC
IRRM(typ.) = 5.8A
Benefits
Reduced RFI and EMI
Reduced Power Loss in Diode and Switching
Transistor
Higher Frequency Operation
Reduced Snubbing
Reduced Parts Count
1
CATHODE
trr(typ.) = 30ns
3
ANODE
2
Description
International Rectifier's HFA16PB120 is a state of the art ultra fast recovery
diode. Employing the latest in epitaxial construction and advanced processing
techniques it features a superb combination of characteristics which result in
performance which is unsurpassed by any rectifier previously available. With
basic ratings of 1200 volts and 16 amps continuous current, the HFA16PB120
is especially well suited for use as the companion diode for IGBTs and
MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line
features extremely low values of peak recovery current (IRRM) and does not
exhibit any tendency to "snap-off" during the tb portion of recovery. The
HEXFRED features combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the switching transistor.
These HEXFRED advantages can help to significantly reduce snubbing,
component count and heatsink sizes. The HEXFRED HFA16PB120 is ideally
suited for applications in power supplies and power conversion systems (such
as inverters), motor drives, and many other similar applications where high
speed, high efficiency is needed.
TO-247AC (Modified)
* 125C
Cathode-to-Anode Voltage
Continuous Forward Current
Continuous Forward Current
Single Pulse Forward Current
Maximum Repetitive Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Max
Units
1200
16
190
64
151
60
-55 to +150
W
C
HFA16PB120
Bulletin PD-2.364 rev. A 11/00
VFM
IRM
CT
Junction Capacitance
LS
Series Inductance
V
2.5 3.0
3.2 3.93
2.3 2.7
0.75 20
375 2000
27
40
V
A
pF
8.0
nH
Test Conditions
IR = 100A
IF = 16A
See Fig. 1
IF = 32A
IF = 16A, TJ = 125C
VR = VR Rated
See Fig. 2
TJ = 125C, VR = 0.8 x VR RatedD Rated
See Fig. 3
VR = 200V
Measured lead to lead 5mm from
package body
Test Conditions
30
IF = 1.0A, dif/dt = 200A/s, VR = 30V
90 135
ns TJ = 25C
164 245
TJ = 125C
IF = 16A
5.8
10
TJ = 25C
A
8.3
15
TJ = 125C
VR = 200V
260 675
TJ = 25C
nC
680 1838
TJ = 125C
dif/dt = 200A/s
120
TJ = 25C
A/s
76
TJ = 125C
Lead Temperature
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Case to Heat Sink
Wt
Weight
Mounting Torque
Min
Typ
Max
Units
300
0.83
80
C
K/W
12
10
g
(oz)
Kg-cm
lbfin
0.50
2.0
0.07
6.0
5.0
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HFA16PB120
Bulletin PD-2.364 rev. A 11/00
1000
10
TJ = 150C
100
T = 125C
J
10
TJ = 25C
0.1
A
0.01
0
200
400
600
800
1000
1200
T = 150C
J
T = 125C
J
T = 25C
J
1000
100
0.1
0
100
T J = 25C
10
1
1
10
100
1000
10000
Thermal Response (Z
thJC
0.1
D
D
D
D
D
D
=
=
=
=
=
=
0.50
0.20
0.10
0.05
0.02
0.01
PDM
Single Pulse
(Thermal Resistance)
t1
t2
Notes:
1. Duty factor D = t1/ t 2
2. Peak TJ = Pdm x ZthJC + Tc
0.01
0.00001
0.0001
0.001
0.01
0.1
10
100
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HFA16PB120
Bulletin PD-2.364 rev. A 11/00
30
270
If = 16 A
If = 8 A
20
170
Irr ( A)
trr (nC)
V R = 200V
T J = 125C
T J = 25C
25
220
If = 16 A
If = 8 A
15
120
10
70
5
VR = 200V
TJ = 125C
TJ = 25C
20
100
0
100
1000
di f / dt (A/s)
10000
1600
1400
1000
di f / dt (A/s)
V R = 200V
T J = 125C
T J = 25C
V R = 200V
T J = 125C
T J = 25C
Qrr (nC)
1000
1200
If = 16A
If = 8A
800
600
1000
If = 16A
If = 8A
100
400
200
0
100
di f / dt (A/s)
1000
10
100
di f / dt (A/s)
1000
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HFA16PB120
Bulletin PD-2.364 rev. A 11/00
t rr
IF
tb
ta
Q rr
VR = 200V
I RRM
0.5 I RRM
di(rec)M/dt
0.01
L = 70H
D.U.T.
dif/dt
ADJUST
D
G
IRFP250
S
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0.75 I RRM
1
di f /dt
HFA16PB120
Bulletin PD-2.364 rev. A 11/00
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