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Features
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VDSS = 55V
RDS(on) = 6.5m
Description
This HEXFET Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features
combine to make this design an extremely efficient
and reliable device for use in a wide variety of
applications.
ID = 75A
D2Pak
IRF3205ZS
TO-220AB
IRF3205Z
TO-262
IRF3205ZL
Max.
Units
110
75
440
170
1.1
20
W/C
V
180
mJ
78
c
IAR
Avalanche Current
EAR
TJ
TSTG
-55 to + 175
C
Thermal Resistance
Parameter
RJC
Junction-to-Case
RCS
RJA
Junction-to-Ambient
A
mJ
250
See Fig.12a, 12b, 15, 16
RJA
10 lbf in (1.1N m)
Typ.
Max.
Units
0.90
C/W
0.50
62
40
1 / 12
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IRF3205Z/ZS/ZL
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
Conditions
V(BR)DSS
55
V(BR)DSS/TJ
0.051
RDS(on)
4.9
6.5
VGS(th)
2.0
4.0
gfs
IDSS
Forward Transconductance
71
20
250
IGSS
200
nA
VGS = 20V
-200
Qg
76
110
Qgs
Gate-to-Source Charge
21
Qgd
30
VGS = 10V
td(on)
18
VDD = 28V
tr
Rise Time
95
td(off)
45
tf
Fall Time
67
VGS = 10V
LD
4.5
Between lead,
LS
7.5
6mm (0.25in.)
from package
Ciss
Input Capacitance
3450
Coss
Output Capacitance
550
Crss
310
Coss
Output Capacitance
1940
Coss
Output Capacitance
430
Coss eff.
640
ID = 66A
nC
VDS = 44V
ID = 66A
ns
nH
RG = 6.8
VDS = 25V
pF
= 1.0MHz
IS
75
ISM
(Body Diode)
Pulsed Source Current
440
VSD
(Body Diode)
Diode Forward Voltage
1.3
trr
28
42
ns
Qrr
25
38
nC
ton
2 / 12
c
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25C, IS = 66A, VGS = 0V
TJ = 25C, IF = 66A, VDD = 25V
di/dt = 100A/s
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IRF3205Z/ZS/ZL
1000
100
1000
VGS
10
4.5V
1
0.1
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
10
100
4.5V
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
100
0.1
10
100
1000
120
T J = 25C
T J = 175C
100
10
VDS = 25V
20s PULSE WIDTH
1
4.0
5.0
6.0
7.0
8.0
9.0
10.0
3 / 12
T J = 175C
100
80
T J = 25C
60
40
20
VDS = 10V
20s PULSE WIDTH
0
11.0
20
40
60
80
100
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IRF3205Z/ZS/ZL
6000
20
5000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C, Capacitance (pF)
C oss = C ds + C gd
4000
Ciss
3000
2000
1000
Coss
Crss
VDS= 44V
VDS= 28V
VDS= 11V
16
12
0
1
ID= 66A
10
100
1000.0
10000
60
80
100
120
1000
TJ = 175C
100.0
40
100
10.0
T J = 25C
1.0
VGS = 0V
0.1
0.2
0.6
1.0
1.4
1.8
4 / 12
20
100sec
10
1msec
Tc = 25C
Tj = 175C
Single Pulse
0.1
2.2
10msec
10
100
1000
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IRF3205Z/ZS/ZL
120
2.5
LIMITED BY PACKAGE
100
80
60
40
20
0
25
50
75
100
125
150
175
ID = 66A
VGS = 10V
2.0
1.5
1.0
0.5
-60 -40 -20
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
5 / 12
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IRF3205Z/ZS/ZL
DRIVER
VDS
D.U.T
RG
20V
VGS
+
V
- DD
IAS
tp
0.01
350
15V
TOP
300
BOTTOM
ID
27A
47A
66A
250
200
150
100
50
0
25
50
75
100
125
150
175
QGD
4.0
VG
Charge
L
DUT
1K
VCC
10 V
ID = 250A
3.0
2.0
1.0
-75 -50 -25
25
50
75
T J , Temperature ( C )
6 / 12
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IRF3205Z/ZS/ZL
1000
100
0.01
0.05
10
0.10
0.1
1.0E-08
1.0E-07
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
200
TOP
Single Pulse
BOTTOM 10% Duty Cycle
ID = 66A
160
120
80
40
0
25
50
75
100
125
150
7 / 12
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IRF3205Z/ZS/ZL
D.U.T
dv/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
P.W.
Period
RG
D=
VGS=10V
Period
P.W.
VDD
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple 5%
ISD
V DS
VGS
RG
RD
D.U.T.
+
-VDD
10V
Pulse Width 1 s
Duty Factor 0.1 %
10%
VGS
td(on)
tr
t d(off)
tf
8 / 12
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IRF3205Z/ZS/ZL
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
10.29 (.405)
2.87 (.113)
2.62 (.103)
-B-
3.78 (.149)
3.54 (.139)
4.69 (.185)
4.20 (.165)
-A-
1.32 (.052)
1.22 (.048)
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
1.15 (.045)
MIN
1
LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
3X
1.40 (.055)
3X
1.15 (.045)
0.93 (.037)
0.69 (.027)
0.36 (.014)
3X
M
B A M
0.55 (.022)
0.46 (.018)
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH
PART NUMBER
ASS EMBLY
LOT CODE
DAT E CODE
YEAR 7 = 1997
WEEK 19
LINE C
For GB Production
EXAMPLE: T HIS IS AN IRF1010
LOT CODE 1789
ASS EMBLED ON WW 19, 1997
IN T HE AS SEMBLY LINE "C"
PART NUMBER
LOT CODE
DAT E CODE
9 / 12
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IRF3205Z/ZS/ZL
D2Pak Package Outline
PART NUMBER
F 530S
DAT E CODE
YEAR 0 = 2000
WEEK 02
LINE L
AS SEMBLY
LOT CODE
For GB Production
THIS IS AN IRF 530S WITH
LOT CODE 8024
AS S EMBLED ON WW 02, 2000
IN THE ASS EMBLY LINE "L"
PART NUMBER
F530S
LOT CODE
10 / 12
DATE CODE
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IRF3205Z/ZS/ZL
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
IGBT
1- GATE
2- COLLECTOR
PART NUMBER
ASS EMBLY
LOT CODE
11 / 12
DATE CODE
YEAR 7 = 1997
WEEK 19
LINE C
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IRF3205Z/ZS/ZL
D2Pak Tape & Reel Information
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
60.00 (2.362)
MIN.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Notes:
12 / 12
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