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TO-220 PACKAGE
(TOP VIEW)
SYMBOL
-60
BDX34A
BDX34B
V CBO
-100
BDX34D
-120
BDX34
-45
BDX34B
-80
-100
-120
BDX34D
Continuous collector current
-60
VCEO
BDX34C
Emitter-base voltage
-80
BDX34C
BDX34A
Collector-emitter voltage (IB = 0)
UNIT
-45
BDX34
Collector-base voltage (IE = 0)
VALUE
VEBO
-5
IC
-10
IB
-0.3
Continuous device dissipation at (or below) 25C case temperature (see Note 1)
Ptot
70
Continuous device dissipation at (or below) 25C free air temperature (see Note 2)
Ptot
TJ
-65 to +150
Tstg
-65 to +150
TA
-65 to +150
V(BR)CEO
ICEO
ICBO
IEBO
hFE
VBE(on)
Collector-emitter
breakdown voltage
TEST CONDITIONS
IC = -100 mA
VEC
(see Note 3)
-45
BDX34A
-60
BDX34B
-80
BDX34C
-100
BDX34D
-120
TYP
MAX
IB = 0
BDX34
-0.5
VCE = -30 V
IB = 0
BDX34A
-0.5
VCE = -40 V
IB = 0
BDX34B
-0.5
VCE = -50 V
IB = 0
BDX34C
-0.5
Collector-emitter
VCE = -60 V
IB = 0
BDX34D
-0.5
cut-off current
VCE = -30 V
IB = 0
TC = 100C
BDX34
-10
VCE = -30 V
IB = 0
TC = 100C
BDX34A
-10
VCE = -40 V
IB = 0
TC = 100C
BDX34B
-10
VCE = -50 V
IB = 0
TC = 100C
BDX34C
-10
VCE = -60 V
IB = 0
TC = 100C
BDX34D
-10
VCB = -45 V
IE = 0
BDX34
-1
VCB = -60 V
IE = 0
BDX34A
-1
VCB = -80 V
IE = 0
BDX34B
-1
VCB = -100 V
IE = 0
BDX34C
-1
Collector cut-off
VCB = -120 V
IE = 0
BDX34D
-1
current
VCB = -45 V
IE = 0
TC = 100C
BDX34
-5
VCB = -60 V
IE = 0
TC = 100C
BDX34A
-5
VCB = -80 V
IE = 0
TC = 100C
BDX34B
-5
VCB = -100 V
IE = 0
TC = 100C
BDX34C
-5
VCB = -120 V
IE = 0
TC = 100C
BDX34D
-5
VEB =
-5 V
IC = 0
Emitter cut-off
current
Forward current
transfer ratio
Base-emitter
voltage
Collector-emitter
saturation voltage
Parallel diode
forward voltage
-10
VCE =
-3 V
IC = -4 A
BDX34
750
VCE =
-3 V
IC = -4 A
BDX34A
750
VCE =
-3 V
IC = -3 A
BDX34B
750
VCE =
-3 V
IC = -3 A
BDX34C
750
VCE =
-3 V
IC = -3 A
BDX34D
750
VCE =
-3 V
IC = -4 A
BDX34
-2.5
VCE =
-3 V
IC = -4 A
BDX34A
-2.5
VCE =
-3 V
IC = -3 A
BDX34B
-2.5
VCE =
-3 V
IC = -3 A
BDX34C
-2.5
-3 V
IC = -3 A
BDX34D
-2.5
IB =
-8 mA
IC = -4 A
BDX34
-2.5
IB =
-8 mA
IC = -4 A
BDX34A
-2.5
IB =
-6 mA
IC = -3 A
BDX34B
-2.5
IB =
-6 mA
IC = -3 A
BDX34C
-2.5
IB =
-6 mA
IC = -3 A
BDX34D
-2.5
IE =
-8 A
IB = 0
UNIT
VCE = -30 V
VCE =
VCE(sat)
IB = 0
MIN
BDX34
-4
mA
mA
mA
NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
2
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
RJC
1.78
C/W
RJA
62.5
C/W
MAX
UNIT
TEST CONDITIONS
MIN
TYP
ton
Turn-on time
IC = -3 A
IB(on) = -12 mA
IB(off) = 12 mA
toff
Turn-off time
VBE(off) = 3.5 V
RL = 10
tp = 20 s, dc 2%
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
VCE(sat) - Collector-Emitter Saturation Voltage - V
TCS135AF
50000
TC = -40C
TC = 25C
TC = 100C
10000
1000
VCE = -3 V
tp = 300 s, duty cycle < 2%
100
-05
-10
-10
TCS135AH
-20
tp = 300 s, duty cycle < 2%
IB = I C / 100
-15
-10
TC = -40C
TC = 25C
TC = 100C
-05
-05
IC - Collector Current - A
-10
-10
IC - Collector Current - A
Figure 1.
Figure 2.
TCS135AJ
-30
-25
TC = -40C
TC = 25C
TC = 100C
-20
-15
-10
IB = IC / 100
tp = 300 s, duty cycle < 2%
-05
-05
-10
-10
IC - Collector Current - A
Figure 3.
4
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS130AB
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
TC - Case Temperature - C
Figure 4.