UNI T - I

E L E C T R I C C I R C UI T S AND E L E C T R ON DE V I C E S

1. W hat is char ge?

The charge is an electrical property of the atomic particles of which matter consists. The unit of charge is the
coulomb.

2. Define cur r ent?

The flow of free electrons in a metal is called electric current. The unit of current is the ampere.
Current (I) = Q/t, Where Q is total charge transferred & T is time required for transfer of charge.

3. W hat is voltage?
The potential difference between two points in an electric circuit called voltage. The unit of voltage is volt. It is
represented by V OR v.
Voltage = W/Q = workdone/Charge

4. Define power .
The rate of doing work of electrical energy or energy supplied per unit time is called the power. The power
denoted by either P of p. It is measured in Watts. (W).
Power = work done in electric circuit/Time
P = dw/dt = dw/dq.dq/dt (or) P = VI

5. W hat is networ k?
Interconnection of two or more simple circuit elements is called an electric network.

6. Distinguish between a br anch and a node of a cir cuit.

A part of the network which connects the various points of the network with one another is called a branch. A
point at which two or more elements are jointed together is called node.

7. Distinguish between a mesh and a L oop of a cir cuit.

A mesh is a loop that does not contain other loops. All meshed are loops. But all loops are not meshes. A loop
is any closed path of branches.

8. Define active and passive elements.

The sources of energy are called active element. Example: voltage source, current source.
The element which stores or dissipates energy is called passive element.
Example: Resistor, Inductor, Capacitor.

9. Define unilater al and bilater al elements.

In unilateral element, voltage - current relation is not same for both the direction. E xample: Diode, Transistors.
In bilateral element, voltage - current relation is same for both the direction. E xample: Resistor

10. Define linear and non-linear elements.

If the element obeys superposition principle, then it is said to be linear elements. E xample: Resistor.If the given
network is not obeying superposition principle then it is said to be non linear elements.
E xample: Transistor, Diode.

11. Define L umped and distr ibuted elements.

Physically separable elements are called Lumped element. Example : Resistor, Capacitor, Inductor.
A distributed element is one which is not separable for electrical purpose. Example : Transmission line has
distributor resistance, capacitance and inductance.

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12. H ow ar e the electr ical ener gy sour ces classified?
The electrical energy sources are classified into: 1. Ideal voltage source 2. Ideal current source.

13. Define an ideal voltage sour ce.

The voltage generated by the source does not vary with any circuit quantity. It is only a function of time. Such a
source is called an ideal voltage source.

14. Define an ideal cur r ent sour ce.

The current generated by the source does not vary with any circuit quantity. It is only a function of time. Such a
source is called as an ideal current source.

15. W hat ar e independent sour ce?

Independent sources are those in which, voltage and current are independent and are not affected by other part of
the circuit.

16. W hat ar e dependent sour ces?

Dependent sources are those in which source voltage or current is not fixed, but is
dependent on the voltage or current existing at some other location in the circuit.

17. W hat ar e the differ ent types of dependent or contr olled sour ces?
1. Voltage Controlled Voltage Sources (VCVS)
2. Current Controlled Voltage Sources (CCVS)
3. Voltage Controlled Current Sources (VCCS)
4. Current Controlled Current Sources (CCCS)

18. W hat is r esistance?

It is the property of a substance which opposes the flow of current through it. The resistance of element is
denoted by the symbol “R”. It is measured in Ohms.
R = PL / A Ω

19.W rite down the V -I relationship of circuit elements.

C ircuit V oltage C ur rent Power

E lement

Resistance V = iR i=V/R P = vi

Inductance V = L di /dt i = 1/L ∫ vdt P = Li di / dt

Capacitance V = 1/c ∫ idt i = C dv / dt P = CV dv / dt

20. W hat is aver age value?

It is defined as area under one complete cycle to period. The average value of the sine wave is the total area under
the half-cycle curve divided by the distance of the curve.
Area under one complete cycle
Average value = Period

21.Define R .M .S. value.

The r.m.s value may be determined by taking the mean of the squares of the instantaneous value of current over
one complete cycle. (Area under hatched line) ²
RMS = Period

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24. Define Ohm’ s law.
The current flowing through the electric circuit is directly proportional to the potential difference across the
circuit and inversely proportional to the resistance of the circuit, provided the temperature remains constant.

25. Define K ir choff’ s cur r ent law.

Kirchhoff’s current law states that in a node, sum of entering current is equal sum of leaving current.
∑ I at junction point = 0

26. Define K ir choff’ s voltage law

Kirchhoff’s Voltage Law (KVL) states that the algebraic sum of the voltages around any closed path is zero.
Around a closed path ∑ V = 0.

27. T wo r esistances with equal value of “ R ” ar e connected in ser ies and par allel. W hat is the equivalent
r esistance?
Resistance in series R eq = R1+R2

R1R2
Resistance in parallel R eq = R1+R2
28. T wo inductor s with equal value of “ L ” ar e connected in ser ies and par allel what is the equivalent
inductance?

Inductance in series L eq = L1 + L2

L1L2
Inductance in parallel L eq = _______
L1+L2

29. T wo capacitor s with equal value of “ C ” ar e connected in ser ies and par allel. W hat is the equivalent
capacitance?
C1C2
Capacitance in series C eq = C1+C2

Capacitance in parallel C eq = C1 + C2

30. W r ite down the for mula for a star connected networ k is conver ted into a delta network?
RA RB + RB RC + RC RA
RAB = ------------------------------------------
RC
RA RB + RB RC + RC RA
RBC = ------------------------------------------
RA
RA RB + RB RC + RC RA
RCA = ------------------------------------------
RB

31. W r ite down the for mula for a delta connected networ k is conver ted into a star networ k?
RBC * RCA
RAB = ----------------------------
R AB + R BC + R CA

32. W r ite few advantages of sinusoid wavefor m?

1. The response of the sinusoidal input for second order system is sinusoidal.
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2. The wave form can be written in terms of sinusoidal function according to fourier theorem.
3. The derivatives and integral also sinusoidal.
4. Easy for analysis.
5. Easy to generate.
6. More useful in power industry.

33. Distinguish between a cycle, time per iods and fr equency.

One complete set of positive and negative instantaneous values of the voltage or current is called cycle. The
time taken by an alternating quantity to complete one cycle is called time period (T).
2π
Time period (T) = ----------------
W
The number of cycle that a alternating quantity completed per second is known as frequency. It is measured in
HZ.
1
Frequency (f) = ----------------
T

34. W hat is instantaneous value?

The value of an alternating current, at any particular moment is called its instantaneous value.

35. W hat ar e peak value and peak to peak value?

The peak value of the sine wave during positive or negative half only. The sum of positive and negative value is
called a peak to peak value. The peak to peak value of a sinusoidal alternating voltage is equal to two times the
peak value.

36. W hat is aver age value?

The average value of the sine wave is the total area under the half-cycle curve divided by the distance of the
curve.
1 T
V = ___ ∫ V (t) dt
av T 0

37. Define effective value or R M S value of a sinusoidal voltage.

The R.M.S value may be determined by taking the mean of the squares of the Instantaneous value of current over
one complete cycle. This is often known as the effective value.
V =
rms √ 1/T T 2
∫ [V (t) dt
0
38. Define phasor .
Graphical representation of phasors V = Vm <φ and I=I < - θ known phasor.

39. Define phase angle.

The angle between voltage and current is called phase angle. It is denoted by φ.

40. W hat is impedance?

The ratio of the phasor voltage to the phasor current is called impedance.
It is denoted as Z and it is measured in Ohms.

41. Define admittance.

The reciprocal of impedance is called admittance. It is denoted as Y and it is measured in Siemens (S).
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 1
Admittance (Y) = ___
Z

44. Define phasor diagr am.

The phasor diagram is a name given to a sketch in the complex plane showing the relationships of the phasor
voltages and phasor currents throughout a specific circuit.

45. W hat is instantaneous power ?

The power at any instant of time is known as instantaneous power. P (t) = v(t) . I (t)

46. W hat is aver age power ?

The average of the instantaneous power over one period is called average power. Average power is also
defined as the product of voltage and current.

48. Define power factor .

The ratio of the average power to the apparent power is called the power factor.

Average power
Power Factor = Apparent Power

51. W hat is r eactive power ?

It is defined as product of the applied voltage and the reactive component of the current. It is also called as
imaginary component of the apparent power. It is represented by “Q” and it is measured in unit volt- ampere
reactive (VAR).
Q = V eff Ieff sin φ VAR

54. W hat is mesh analysis?

Mesh analysis is one of the basic techniques used for finding current flowing through the loop in a network.
Mesh analysis is applicable if the given network contains voltage sources. If therer exist current sources in a
circuit, then it should be converted into equivalent voltage sources.

55. W hat is nodal analysis?

Nodal analysis is one of the basic techniques used to finding solution for voltage drop across the nodes in a given
circuit. Nodal analysis is applicable if the given network contains current sources. If there exists
voltage sources in the given circuit, then it can to be converted into equivalent current sources.

56. W hen do we go for super mesh analysis.

If the branches in the network has a current source, then it is slightly difficult to apply mesh analysis. One way to
overcome this difficulty is by applying the supermesh technique. In this case we have to choose supermesh. A
supermesh is constituted by two adjacent loops that have common current source.

57. W hen do we, go for super node analysis.

If the branches in the network has a voltage source, then it is slightly difficult to apply nodal analysis. One way
to overcome this difficulty is by applying the supernode technique. In this case, we have to choose super node.
A supernode is constituted by two adjacent node that have common voltage source.

58. State super position theor em.

Any electric circuit (linear, lumped, bilateral), is energeied by two or more sources, the response in any element
in the network is equal to the algebraic sum of the responses caused by individual sources acting separately.

59. State T hevenin’ s T heorem.

A complex network having linear, bilateral, lumped elements with open circuited output terminals can be
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reduced by a simple circuit consisting of a single voltage source in series with a impedance.

60. State Nor ton’ s theorem.

Any electrical network (linear, lumped, bilateral) with short circuited terminals can be reduced by a simple
circuit consisting of a single current source in parallel with a Thevenin’s equivalent resistance.

61. State M aximum power tr ansfer theor em.

Power transferred from source to load will be maximum, when source resistance is equal to load resistance
looking back from its load terminals.

62. Define duality.

Two electrical network which are governed by the same type of equations are called duality.

T R ANSI E NT R E SONANC E I N R L C C I R C UI T S

1. W hat is tr ansient state?

If a network contains energy storage elements, with change in excitation, the current and voltages change from
one state to other state. The behaviour of the voltage or current when it is changed from one state to another state
is called transient state.

2. W hat is tr ansient time?

The time taken for the circuit to change from one steady state to another steady state is called transient time.

3. W hat is natur al r esponse?

If we consider a circuit containing storage elements which are independent of sources, the response depends
upon the nature of the circuit, it is called natural response.

4. W hat is tr ansient r esponse?

The storage elements deliver their energy to the resistances, hence the response changes with time, gets saturated
after sometime, and is referred to the transient response.

7. Define time constant or R L C ir cuit.

The time taken to reach 63.2% of final value in a RL Circuit is called the time constant of RL circuit.
Time constant (t) = L/R

8. Define time constant of R C C ir cuit.

The time taken to reach 36.8% of initial current in an RC circuit is called the time constant of RC circuit.
Time constant (t) = RC.

9. W hat is meant by natur al fr equency?

If the damping is made zero then the response oscillates with natural frequency without any opposition, such a
frequency is called natural frequency of oscillations, denoted as ώn
.
10. Define damping r atio.
It is the ratio of actual resistance (R) in the circuit to the critical resistance (R cr). It is denoted by greek letter Zeta
(ξ).
R R
Ξ = ____ = _____ √ C / L
R cr 2
17. Define r esonant cir cuit.
The circuit that treat a narrow range of frequencies very differently than all other frequencies. These are referred
to as resonant circuit. The gain of a highly resonant circuit attains a sharp maximum or minimum as its resonant
frequency.
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18. W hen the cir cuit is said to be in r esonance?
1. A network is in resonance when the voltage and current at the network input terminals are in phase.
2. If inductive reactance of a network equals capacitive reactance then the network is said to be resonance

19. W hat is r esonant fr equency?

The frequency at which resonance occurs is called resonance frequency.
1
fr = --------------------
2Л√LC

20. Define bandwidth.

The bandwidth (BW) is defined as the frequency difference between upper cut-off frequency (f2) and lower
cut-off frequency (f1)
Bandwidth = f2-f1
Where f2 = upper cut-off frequency
f1 = lower cut-off frequency

21. Define selectivity.

Selectivity is defined as the ratio of bandwidth to the resonant frequency of resonant circuit.
___Bandwidth___
Selectivity = Resonant frequency

22. Define quality factor.

The quality factor is defined as the ratio of maximum energy stored to the energy dissipated per cycle.
Maximum energy stored per cycle
Quality factor (Q) = 2Л *
Energy dissipated per cycle

23. Define half power fr equencies ?

The frequencies at which the power is half the maximum power are called half power frequencies.
R
Lower half power frequency, f1 = f r - ____
4Л L

R
Upper half power frequency, f2 = f r + ____
4Л L
24. W r ite down the for mula for inductive r eactance and capacitive r eactance?

Inductive reactance is given by X L= 2Л f L

Capacitive reactance is given by XC= ____1____
2Л fc
Where , F = supply frequency
L = Inductance of the coil
C = Capacitance of the capacitor.

25. G ive the expr ession for quality factor of ser ies R L C C ir cuit.
Quality factor is, Q = 1 / R √ (L /C)

26. G ive the expr ession for quality factor of par allel R L C C ir cuit.
Quality factor is, Q = R √ (C / L)
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 UNI T I I I

SE M I C ONDUC T OR DI ODE S

1. G ive the value of C har ge, M ass of an electr on.

Charge of an electron - 1.6 x 10 -19 coloumbs & Mass of an electron - 9.11 x 10 -31 Kgs

2. Define Potential.
A potential of V volts at point B with respect to point A, is defined as the work done in taking unit positive
charge from A to B , against the electric field.

3. Define C ur rent density.

It is defined as the current per unit area of the conducting medium. J = I / A

4. Define E lectr on volts.

If an electron falls through a potential of one volt then its energy is 1 electron volt. 1 eV = 1.6 x 10 -19 joules

5. W hat is E lectr ostatic deflection sensitivity?

Electrostatic deflection sensitivity of a pair of deflecting plates of a cathode ray oscilloscope ( CRO) is defined
as the amount of deflection of electron spot produced when a voltage of 1 Volt DC is applied between the
corresponding plates.

7. W hat ar e valence electr ons?

Electron in the outermost shell of an atom is called valence electron.

8. W hat is for bidden ener gy gap?

The space between the valence and conduction band is said to be forbidden energy gap.

9. W hat ar e conductor s? G ive examples?

Conductors are materials in which the valence and conduction band overlap each other so there is a swift
movement of electrons which leads to conduction. Ex. Copper, silver.

10. W hat ar e insulator s? G ive examples?

Insulators are materials in which the valence and conduction band are far away from each other. So no ovement
of free electrons and thus no conduction. Ex glass, plastic.

11. G ive the ener gy band str ucture of I nsulator.

In Insulators there is a wide forbidden energy gap. So movement of valence electron from valence to conduction
band is not possible.

12. G ive the ener gy band str uctur e of Semi conductor .

In Semiconductors there is a small forbidden energy gap. So movement of valence electron from valence to
conduction band is possible if the valence electrons are supplied with some energy.

13. G ive the ener gy band str ucture of conductor .

In conductors there is no forbidden energy gap, valence band and conduction and over lap each other. so there is
a heavy movement of valence electrons.

14. what ar e Semiconductor s? G ive examples?

The materials whose electrical property lies between those of conductors and insulators are known as
Semiconductors. Ex germanium, silicon.

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15. W hat ar e the types of Semiconductor ?
1. Intrinsic semiconductor 2. Extrinsic semiconductor.

16. W hat is I ntr insic Semiconductor ?

Pure form of semiconductors are said to be intrinsic semiconductor.
Ex: germanium, silicon.

17. Define M ass - action law.

Under thermal equilibrium the product of free electron concentration (n) and hole concentration (p) is constant
regardless of the individual magnitude. n.p = ni2

18. W hat is E xtr insic Semiconductor ?

If certain amount of impurity atom is added to intrinsic semiconductor the resulting semiconductor is Extrinsic or
impure Semiconductor.

19. W hat ar e the types of E xtr insic Semiconductor ?

1. P-type Semiconductor
2. N- Type Semiconductor.

20. W hat is P-type Semiconductor ?

The Semiconductor which are obtained by introducing pentavalent impurity atom (phosphorous, antimony) are
known as P-type Semiconductor.

21. W hat is N-type Semiconductor ?

The Semiconductor which is obtained by introducing trivalent impurity atom (gallium, indium) are known as
N-type Semiconductor.

22. W hat is doping?

Process of adding impurity to a intrinsic semiconductor atom is doping. The impurity is called dopant.

23. W hich char ge car r ier s is major ity and minor ity car r ier in N-type Semiconductor ?
majority carrier: electron and minority carrier: holes.

24.which char ge car r ier s is major ity and minor ity car r ier in P-type Semiconductor ?
Majority carrier: holes and minority carrier: electron

25. W hy n - type or penta valent impur ities ar e called as Donor impur ities?
n- type impurities will donate the excess negative charge carriers ( Electrons) and therefore they are reffered to as
donor impurities.

26. W hy P - type or tr ivalent impurities are called as acceptor impurity?

p- type impurities make available positive carriers because they create holes which can accept electron, so these
impurities are said to be as acceptor impurity.

29. Define dr ift cur r ent?

When an electric field is applied across the semiconductor, the holes move towards the negative terminal of the
battery and electron move towards the positive terminal of the battery. This drift movement of charge carriers
will result in a current termed as drift current.
30. G ive the expr ession for dr ift cur r ent density due to electr on.
Jn = q n enE
Where, Jn - drift current density due to electron
q- Charge of electron

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en - Mobility of electron
E - applied electric field

31. G ive the expr ession for dr ift cur r ent density due to holes.
Jp = q p ep E
Where, Jn - drift current density due to holes
q - Charge of holes
ep - Mobility of holes
E - applied electric field

32. Define the ter m diffusion cur r ent?

A concentration gradient exists, if the number of either electrons or holes is greater in one region of a
semiconductor as compared to the rest of the region. The holes and electron tend to move from
region of higher concentration to the region of lower concentration. This process in called diffusion and the
current produced due this movement is diffusion current.

33. Define mean life time of a hole or and electr on.

The electron hole pair created due to thermal agitation woll disappear as a result of recombination. Thus an
average time for which a hole or an electron exist before recombination can be said as the mean life time of a
hole or electron.

34. W hat is the other name of continuity equation? W hat does it indicate?
The other name of continuity equation is equation of conservation of charge. This equation indicates that the
rate at which holes are generated thermally just equals the rate at which holes are lost because of recombination
under equilibrium conditions.
35. Define H all effect?
If a metal or semiconductor carrying current I is placed in a transverse magnetic field B , an electric
field E is induced in the direction perpendicular to both I and B This phenomenon is known as Hall
effect.
36. G ive some application of H all E ffect.
i). Hall Effect can be used to measure the strength of a magnetic field in terms of electrical voltage. ii).It is used
to determine whether the semiconductor is p - type or n- type material iii).It is used to determine the carrier
concentration iv).It is used to determine the mobility.

37. Define the ter m tr ansition capacitance?

When a PN junction is reverse biased, the depletion layer acts like a dielectric material while P and N -type
regions on either side which has low resistance act as the plates. In this way a reverse biased PN junction may be
regarded as parallel plate capacitor and thus the capacitance across this set up is called as the transition
capacitance.
CT = A / W
Where
CT - transition capacitance
A - Cross section area of the junction
W - Width of the depletion region

38. W hat is a var actor diode?

A diode which is based on the voltage variable capacitance of the reverse biased p-n junction is said to be
varactor diode. It has other names such as varicaps, voltacaps.

39. Define the ter m diffusion capacitance.

The diffusion capacitance of a forward biased diode is defined as the rate of change of injected charge with
voltage. CD = I / VT
Where, CD – Diffusion Capacitance
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 I - current across the diode
VT - threshold voltage
40. what is r ecover y time? G ive its types.
When a diode has its state changed from one type of bias to other a transient accompanies the diode response,
i.e., the diode reaches steady state only after an interval of time “ tr” called as recovery time. The recovery time can
be divided in to two types such as
(i) forward recovery time (ii) reverse recovery time
41. W hat is meant by for war d r ecover y time?
The forward recovery time may be defined as the time interval from the instant of 10% diode voltage to the
instant this voltage reaches 90% of the final value. It is represented as t f r.

42. W hat is meant by r ever se r ecover y time?

The reverse recovery time can be defined as the time required for injected or the excess minority carrier density
reduced to zero , when external voltage is suddenly reversed.

43. Define stor age time.

The interval time for the stored minority charge to become zero is called storage time. It is represented as t s.

44. Define tr ansition time.

The time when the diode has normally recovered and the diode reverse current reaches reverse saturaton current
I0 is called as transition time.

45. W hat ar e br eak down diodes?

Diodes which are designed with adequate power dissipation capabilities to operate in the break down region are
called as break down or zener diodes.

46. W hat is br eak down? W hat ar e its types?

When the reverse voltage across the pn junction is increased rapidly at a voltage the junction breaks down
leading to a current flow across the device. This phenomenon is called as break down and the voltage is break
down voltage. The types of break down are
i) zener break down
ii)Avalanche breakdown

47. W hat is zener br eakdown?

Zener break down takes place when both sides of the junction are very heavily doped and Consequently the
depletion layer is thin and consequently the depletion layer is tin. When a small value of reverse bias voltage is
applied , a very strong electric field is set up across the thin depletion layer. This electric field is enough to break
the covalent bonds. Now extremely large number of free charge carriers are produced which constitute the zener
current. This process is known as zener break down.

48. W hat is avalanche br eak down?

When bias is applied , thermally generated carriers which are already present in the diode acquire sufficient
energy from the applied potential to produce new carriers by removing valence electron from their bonds. These
newly generated additional carriers acquire more energy from the potential and they strike the lattice and create
more number of free electrons and holes. This process goes on as long as bias is increased and the number of free
carriers get multiplied. This process is termed as avalanche multiplication. Thus the break down which occur in
the junction resulting in heavy flow of current is termed as avalanche break down.

49. H ow does the avalanche br eakdown voltage var y with temper atur e?
In lightly doped diode an increase in temperature increases the probability of collision of electrons and thus
increases the depletion width. Thus the electrons and holes needs a high voltage to cross the junction. Thus the
avalanche voltage is increased with increased temperature.

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50. H ow does the zener br eakdown voltage var y with temper atur e?
In heavily doped diodes, an increase in temperature increases the energies of valence electrons, and hence makes
t easier for these electrons to escape from covalent bonds. Thus less voltage is sufficient to knock or pull these
electrons from their position in the crystal and convert them in to conduction electrons. Thus zener break down
voltage decreases with temperature.

UNI T I V

T R ANSI ST OR S
51. W hat is a tr ansistor (B J T )?
Transistor is a three terminal device whose output current, voltage and /or power is controlled by input current.

52. W hat ar e the ter minals pr esent in a tr ansistor ?

Three terminals: emitter, base, collector.

53. W hat is F E T ?
FET is abbreviated for field effect transistor. It is a three terminal device with its output characteristics controlled
by input voltage.

54. W hy F E T is called voltage contr olled device?

The output characteristics of FET is controlled by its input voltage thus it is voltage controlled.

55. W hat ar e the two main types of F E T ?

1. JFET 2. MOSFET.
56. W hat ar e the ter minals available in F E T ?
1). Drain, 2).Source and 3). Gate
57. W hat is J F E T ?
JFET- Junction Field Effect Transistor.

58. W hat ar e the types of J F E T ?

N- Channel JFET and P- Channel JFET
59. W hat ar e the two impor tant char acter istics of J F E T ?
1. Drain characteristics 2. Transfer characteristics.

60. W hat is transconductance in J F E T ?

It is the ratio of small change in drain current to the corresponding change in drain to source voltage.
61. W hat is amplification factor in J F E T ?
It is the ratio of small change in drain to source voltage to the corresponding change in Gate to source voltage.

62. W hy do we choose q point at the center of the loadline?

The operating point of a transistor is kept fixed usually at the center of the active region in order that the input
signal is well amplified. If the point is fixed in the saturation region or the cut off region the positive and negative
half cycle gets clipped off respectively.

63. L ist out the differ ent types of biasing. ._

Voltage divider bias, Base bias, Emitter feedback bias, Collector feedback bias, Emitter bias.
64. W hat do you meant by thermal runway?
Due to the self heating at the collector junction, the collector current rises. This causes damage to the device.
This phenomenon is called thermal runway.

65. W hy is the tr ansistor called a cur r ent contr olled device?

The output characteristics of the transistor depend on the input current. So the transistor is called a current
controlled device.
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66. Define cur r ent amplification factor ?
It is defined as the ratio of change in output current to the change in input current at constant.

67. W hat ar e the r equir ements for biasing cir cuits?

The q point must be taken at the Centre of the active region of the output characteristics. f Stabilize the collector
current against the temperature variations. Make the q point independent of the transistor parameters.
f When the transistor is replaced, it must be of same type.

68. W hen does a tr ansistor act as a switch?

The transistor acts as a switch when it is operated at either cutoff region or saturation region

69. W hat is biasing?

To use the transistor in any application it is necessary to provide sufficient voltage and current to operate the
transistor. This is called biasing.
70. W hat is stability factor ?
Stability factor is defined as the rate of change of collector current with respect to the rate of change of reverse
saturation current.

71. E xplain about the var ious r egions in a tr ansistor ?

The three regions are active region saturation region cutoff region.
72. E xplain about the char acter istics of a tr ansistor ?
Input characteristics: it is drawn between input voltage & input current while keeping output voltage as constant.
Output characteristics: It is drawn between the output voltage &output current while keeping input current as
constant.
16 mar ks-H ints
73. E xplain the constr uction, oper ation, volt amper e char acter istics, and application of SC R , also explain
its two tr ansistor model.
Maximum mark for this question: 16 marks Construction (2marks)
Equivalent circuit and two transistor model (2marks) Operation (4marks)
Volt ampere characteristics (4marks)
Application (2marks)
74. E xplain the constr uction, oper ation, equivalent cir cuit, volt amper e char acter istics, and application of
UJ T .
Maximum mark for this question: 16 marks
Construction (4marks)
Equivalent circuit (2marks)
Operation (4marks)
Volt ampere characteristics (4marks)
Application (2marks)
75. E xplain the constr uction, oper ation, equivalent cir cuit, volt amper e char acter istics, and application of
DI AC .
Maximum mark for this question: 16 marks
Construction (4marks)
Equivalent circuit (2marks)
Operation (4marks)
Volt ampere characteristics (4marks)
Application (2marks)
76. E xplain the constr uction, oper ation, equivalent cir cuit, volt amper e char acter istics, and application of
T R I AC
Maximum mark for this question: 16 marks
Construction (4marks)
Equivalent circuit (2marks)
Operation (4marks) ,Volt ampere characteristics (4marks) , Application (2marks)

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 UNI T V
SPE C I AL SE M I C ONDUC T OR DE V I C E S

78. W hat is a T R I AC ?
TRIAC is a three terminal bidirectional semiconductor switching device. It can conduct in both the
directions for any desired period. In operation it is equivalent to two SCR’s connected in antiparallel.
79. G ive the application of T R I AC .
1. Heater control
2. Motor speed control
3. Phase control
4. Static switches

80. W hat ar e the differ ent oper ating modes of T R I AC ?

1. Keeping MT2 and G positive
2. Keeping MT2 and G negative.
3. Keeping MT2 positive and G negative.
4. Keeping MT2 negative and G positive.

81. W hat ar e the r egions in the V I char acter istics of UJ T ?

1. Cut-off region
2. Negative resistance region.
3. Saturation region

82. W hat is meant by negative r esistance r egion of UJ T ?

In a UJT when the emitter voltage reaches the peak point voltage, emitter current starts flowing. After the peak
point any effort to increase in emitter voltage further leads to sudden increase in the emitter current with
corresponding decrease in emitter voltage, exhibiting negative resistance. This takes place until the valley point
is reached. This region between the peak point and valley point is called negative resistance region.

83. M ention the applications of UJ T .

1. It is used in timing circuits
2. It is used in switching circuits
3. It is used in phase control circuits
4. It can be used as trigger device for SCR and triac.
5. It is used in saw tooth generator.
6. It is used for pulse generation.

84. W hat is a DI AC ?
DIAC is a two terminal bidirectional semiconductor switching device. . It can conduct in either direction
depending upon the polarity of the voltage applied across its main terminals. In operation DIAC is equivalent to
two 4 layer diodes connected in anti parallel.

85. G ive some applications of DI AC .

1. To trigger TRIAC
2. Motor speed control
3. Heat control
4. Light dimmer circuits

87. W hat is a SC R ?
A silicon controller rectifier (SCR) is a three terminal, three junction semiconductor device that acts as a true
electronic switch. It is a unidirectional device. It converts alternating current into direct current and controls the
amount of power fed to the load.
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88. Define br eak over voltage of SC R .
Break over voltage is defined as the minimum forward voltage with gate open at which the SCR starts
conducting heavily.

89.W hy SC R cannot be used as a bidir ectional switch.

SCR can do conduction only when anode is positive with respect to cathode with proper gate current. Therefore,
SCR operates only in one direction and cannot be used as bidirectional switch.

90. H ow tur ning on of SC R is done?

1. By increasing the voltage across SCR above forward break over voltage.
2. By applying a small positive voltage at gate.
3. By rapidly increasing the anode to cathode voltage. 4. By irradiating SCR with light.

91. H ow tur ning off of SC R is done?

1. By reversing the polarity of anode to cathode voltage.
2. By reducing the current through the SCR below holding current.
3.By interrupting anode current by means of momentarily series or parallel switching

92. Define holding cur r ent in a SC R .

Holding current is defined as the minimum value of anode current to keep the SCR ON.

93. L ist the advantages of SC R .

1. SCR can handle and control large currents.
2. Its switching speed is very high
3. It has no moving parts, therefore it gives noiseless operation.
4. Its operating efficiency is high.

94. L ist the application of SC R .

1. It can be used as a speed controller in DC and AC motors.
2. It can be used as an inverter.
3. It can be used as a converter
4. It is used in battery chargers.
5. It is used for phase control and heater control.
6. It is used in light dimming control circuits.

95. W hat is meant by latching.

The ability of SCR to remain conducting even when the gate signal is removed is called as latching.

96. Define for war d cur r ent r ating of a SC R .

Forward current rating of a SCR is the maximum anode current that it can handle without destruction.

97. L ist the impor tant r atings of SC R .

1. Forward break over voltage
2. Holding current
3. Gate trigger current
4. Average forward current , 5. Reverse break down voltage.
98. C ompar e SC R with T R I AC .
SC R T R I AC
1. unidirectional current 1. bidirectional current
2. triggered by positive pulse at gate 2. triggered by pulse of positive or negative at gate
3. fast turn off time 3,. Longer turn off time
4. large current ratings 4. lower current ratings

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99. Differ entiate B J T and UJ T .
BJT
1. It has two PN junctions
2. three terminals present
are emitter, base,collector
3. basically a amplifying device
UJ T
1. It has only one PN junctions
2. three terminals present are emitter,
base1,base2
3. basically a switching device

100. W hat is Shockley diode (PNPN diode)?

Shockley diode is a four layered PNPN silicon diode. It is a low- current SCR without a gate. This device is
switched ON when the anode to cathode voltage is increased to forward switching voltageVS which is
equivalent to SCR forward break over voltage.

101. W hat is a thyr istor ?

Thyristor is a semiconductor device having three or more junctions .Such a device acts as a switch without any
bias and can be fabricated to have voltage ratings of severalhundred volts and current ratings from a few
amperes to almost thousand amperes.

102. W hat ar e the types of thyr istor s?

1. Unidirectional thyristors
2. Bidirectional thyristors , 3. Low-power thyristors
103. G ive the var ious tr igger ing devices for thyr istor s.
1. SCR
2. UJT
3. DIAC , 4. TRIAC

104. what is backwar d diode?

The backward diode is a diode in which the doping level is moderate. The forward current in this
case is very small, very much similar to that of the reverse current in the conventional diode.

105. what is a photo diode?

The photo diode is a diode in which the current sensitivity to radiation can be made much larger by the use of the
reverse biased PN junction. Thus this diode conducts heavily in the reverse bias when there is some radiaton
allowed to fall on the PN junction.

106. W hat is a L E D?
A PN junction diode which emits light when forward biased is known as Light emitting diode (LED).

107. W hat is a tunnel diode?

The tunnel diode is a pn junction diode in which the impurity concentration is greatly increased about 1000
times higher than a conventional PN junction diode thus yielding a very thin depletion
layer. This diode utilizes a phenomenon called tunneling and hence the diode is referred as tunnel
diode.

108. W hat is tunneling phenomenon?

The phenomenon of penetration of the charge carriers directly though the potential barrier instead of climbing
over it is called as tunneling.

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