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⎛ nVvD ⎞
⎜
iD = I S e − 1⎟
T
Ecuación I-V
⎜ ⎟
⎝ ⎠
kT
VT = ≈ 25mV @ 300K. k = 1.38x10-23 J/K q = 1.6x10-19 C
q
nVT
rd = Modelo de pequeña señal
ID
1 VD 0
VO ≈ Vp − Rectificador de media onda
π 2
PIV = Vp Vr =
Vp
fCR
=
IL
fC
(
iDprom = I L 1 + π 2V p Vr ) (
iD max = I L 1 + 2π 2V p Vr )
2
VO ≈ V p − 2VD 0 Rectificador de onda completa en puente
π
PIV ≈ Vp Vr =
Vp
2 fCR
(
iDprom = I L 1 + π V p 2Vr ) (
iD max = I L 1 + 2π V p 2Vr )
2
VO ≈ V p − VD 0 Rectificador de onda completa TDC
π
⎛v ⎞⎛ vCE ⎞ ⎛ v ⎞⎛ v ⎞
iC = I S exp⎜⎜ BE ⎟⎟⎜⎜1 + ⎟⎟ iC = I S exp⎜⎜ EB ⎟⎟⎜⎜1 + EC ⎟⎟
⎝ VT ⎠⎝ VA ⎠ ⎝ VT ⎠⎝ vA ⎠
iC IS ⎛v ⎞ iC IS ⎛v ⎞
iE = = exp⎜⎜ BE ⎟⎟ iE = = exp⎜⎜ EB ⎟⎟
α α ⎝ VT ⎠ α α ⎝ VT ⎠
iC IS ⎛v ⎞ iC IS ⎛v ⎞
iB = = exp⎜⎜ BE ⎟⎟ iB = = exp⎜⎜ EB ⎟⎟
β β ⎝ VT ⎠ β β ⎝ VT ⎠
Ambos transistores
iE = iC + iB iC = βiB
iE = (1 + β )iB iC = αiE
β α
α= β=
β +1 1−α
VA
ro =
IC
I α VT β
gm = C re = = rπ =
VT gm IE gm
Unidad 3. El transistor de efecto de campo MOS.
⎡ 1 2 ⎤
⎢⎣(VGS − Vt )VDS − 2 VDS ⎥⎦
W
I D = µ n Cox
L
1
µ nCox (VGS − Vt )2 (1 + λVDS )
W
ID =
2 L
g m = µ nCox
W
(VGS − Vt ) = 2µ nCox W I D = 2 I D
L L VGS − Vt
VA 1 γ
ro = = g mb = χg m = gm
I D λI D 2 2φ f + VSB