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TDA7560

4 X 45W QUAD BRIDGE CAR RADIO AMPLIFIER PLUS HSD

1 Features Figure 1. Package


■ SUPERIOR OUTPUT POWER CAPABILITY:
4 x 50W/4Ω MAX.
4 x 45W/4Ω EIAJ
4 x 30W/4Ω @ 14.4V, 1KHz, 10%
4 x 80W/2Ω MAX. FLEXIWATT25
4 x 77W/2Ω EIAJ
4 x 55W/2Ω @ 14.4V, 1KHz, 10% Table 1. Order Codes
■ MULTIPOWER BCD TECHNOLOGY Part Number Package
■ MOSFET OUTPUT POWER STAGE TDA7560 FLEXIWATT25
■ EXCELLENT 2Ω DRIVING CAPABILITY
■ HI-FI CLASS DISTORTION
■ OUTPUT DC OFFSET DETECTION
■ LOW OUTPUT NOISE
■ LOAD DUMP VOLTAGE
■ ST-BY FUNCTION
■ FORTUITOUS OPEN GND
■ MUTE FUNCTION
■ REVERSED BATTERY
■ AUTOMUTE AT MIN. SUPPLY VOLTAGE
■ ESD
DETECTION
■ LOW EXTERNAL COMPONENT COUNT:
– INTERNALLY FIXED GAIN (26dB) 2 Description
– NO EXTERNAL COMPENSATION The TDA7560 is a breakthrough BCD (Bipolar /
– NO BOOTSTRAP CAPACITORS CMOS / DMOS) technology class AB Audio Power
■ ON BOARD 0.35A HIGH SIDE DRIVER Amplifier in Flexiwatt 25 package designed for
high power car radio. The fully complementary P-
1.1 Protections: Channel/N-Channel output structure allows a rail
■ OUTPUT SHORT CIRCUIT TO GND, TO VS, to rail output voltage swing which, combined with
ACROSS THE LOAD high output current and minimised saturation loss-
■ VERY INDUCTIVE LOADS es sets new power references in the car-radio
■ OVERRATING CHIP TEMPERATURE WITH field, with unparalleled distortion performances.
SOFT THERMAL LIMITER
Figure 2. Block Diagram
Vcc1 Vcc2
470µF 100nF

ST-BY

MUTE HSD HSD/VOFFDET


OUT1+
IN1 OUT1-
0.1µF PW-GND

OUT2+
IN2 OUT2-
0.1µF PW-GND

OUT3+
IN3 OUT3-
0.1µF PW-GND

OUT4+
IN4 OUT4-
0.1µF PW-GND

AC-GND SVR TAB S-GND


0.47µF 47µF
D94AU158C

Rev. 2
February 2005 1/11
TDA7560

Figure 3. Pin Connection (Top view)

1 25
TAB
P-GND2
OUT2-
ST-BY
OUT2+
VCC
OUT1-
P-GND1
OUT1+
SVR
IN1
IN2
S-GND
IN4
IN3
AC-GND
OUT3+
P-GND3
OUT3-
VCC
OUT4+
MUTE
OUT4-
P-GND4
HSD
D94AU159A

Table 2. Absolute Maximum Ratings


Symbol Parameter Value Unit

VCC Operating Supply Voltage 18 V

VCC (DC) DC Supply Voltage 28 V

VCC (pk) Peak Supply Voltage (for t = 50ms) 50 V

IO Output Peak Current


Repetitive (Duty Cycle 10% at f = 10Hz) 9 A
Non repetitive (t = 100µs) 10 A

Ptot Power Dissipation Tcase = 70°C 80 W

Tj Junction Temperature 150 °C

Tstg Storage Temperature -55 to 150 °C

THERMAL DATA
Symbol Parameter Value Unit

Rth j-case Thermal Resistance Junction to case Max. 1 °C/W

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TDA7560

Table 3. Electrical Characteristcs


(Refer to the test and application diagram, VS = 13.2V; RL = 4Ω; Rg = 600Ω; f = 1KHz; Tamb = 25°C; unless
otherwise specified).
Symbol Parameter Test Condition Min. Typ. Max. Unit
Iq1 Quiescent Current RL = ∞ 120 200 320 mA
VOS Output Offset Voltage Play Mode ±60 mV
dVOS During mute ON/OFF output ±60 mV
offset voltage
Gv Voltage Gain 25 26 27 dB
dGv Channel Gain Unbalance ±1 dB
Po Output Power VS = 13.2V; THD = 10% 23 25 W
VS = 13.2V; THD = 1% 16 19 W
VS = 14.4V; THD = 10% 28 30 W
VS = 14.4V; THD = 1% 20 23 W
VS = 13.2V; THD = 10%, 2Ω 42 45 W
VS = 13.2V; THD = 1%, 2Ω 32 34 W
VS = 14.4V; THD = 10%, 2Ω 50 55 W
VS = 14.4V; THD = 1%, 2Ω 40 43 W
Po EIAJ EIAJ Output Power (*) VS = 13.7V; RL = 4Ω 41 45 W
VS = 13.7V; RL = 2Ω 72 77 W
Po max. Max. Output Power (*) VS = 14.4V; RL = 4Ω 50 W
VS = 14.4V; RL = 2Ω 80 W
THD Distortion Po = 4W 0.006 0.05 %
Po = 15W; RL = 2Ω 0.015 0.07 %
eNo Output Noise "A" Weighted 35 50 µV
Bw = 20Hz to 20KHz 50 70 µV
SVR Supply Voltage Rejection f = 100Hz; Vr = 1Vrms 50 70 dB
fch High Cut-Off Frequency PO = 0.5W 100 300 KHz
Ri Input Impedance 80 100 120 KΩ
CT Cross Talk f = 1KHz PO = 4W 60 70 - dB
f = 10KHz PO = 4W 60 - dB
ISB St-By Current Consumption VSt-By = 1.5V 20 µA
Ipin5 St-by pin Current VSt-By = 1.5V to 3.5V ±10 µA
VSB out St-By Out Threshold Voltage (Amp: ON) 3.5 V
VSB in St-By in Threshold Voltage (Amp: OFF) 1.5 V
AM Mute Attenuation POref = 4W 80 90 dB
VM out Mute Out Threshold Voltage (Amp: Play) 3.5 V
VM in Mute In Threshold Voltage (Amp: Mute) 1.5 V
VAM in VS Automute Threshold (Amp: Mute)
Att ≥ 80dB; POref = 4W 6.5 7 V
(Amp: Play)
Att < 0.1dB; PO = 0.5W 7.5 8 V
Ipin23 Muting Pin Current VMUTE = 1.5V 7 12 18 µA
(Sourced Current)
VMUTE = 3.5V -5 18 µA
HSD SECTION
Vdropout Dropout Voltage IO = 0.35A; VS = 9 to 16V 0.25 0.6 V
Iprot Current Limits 400 800 mA

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TDA7560

Table 3. Electrical Characteristcs (continued)


(Refer to the test and application diagram, VS = 13.2V; RL = 4Ω; Rg = 600Ω; f = 1KHz; Tamb = 25°C; unless
otherwise specified).
Symbol Parameter Test Condition Min. Typ. Max. Unit
OFFSET DETECTOR (Pin 26)
VM_ON Mute Voltage for DC offset Vstby = 5V 8 V
detection enabled
VM_OFF 6 V
VOFF Detected Differential Output Vstby = 5V; Vmute = 8V ±2 ±3 ±4 V
Offset
V25_T Pin 25 Voltage for Detection = Vstby = 5V; Vmute = 8V 0 1.5 V
TRUE VOFF > ±4V
V25_F Pin 25 Voltage for Detection = Vstby = 5V; Vmute = 8V 12 V
FALSE VOFF > ±2V

(*) Saturated square wave output.

Figure 4. Standard Test and Application Circuit

C8 C7
0.1µF 2200µF
Vcc1-2 Vcc3-4

R1 6 20
ST-BY 4 9
10K C9 8 OUT1
1µF
R2 7
MUTE 22
47K C10
1µF 5
C1
2 OUT2
IN1 11
3
0.1µF

IN2 12 17
C2 0.1µF 18 OUT3
19
IN3 15
C3 0.1µF
21
IN4 14 24 OUT4
C4 0.1µF S-GND 23
13
16 10 25 1
SVR HSD TAB
C5 C6
0.47µF D95AU335B
47µF

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TDA7560

Figure 5. P.C.B. and component layout of the Figure 4.


Components &
Top Copper Layer

Bottom Copper Layer

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TDA7560

Figure 6. Quiescent current vs. supply voltage. Figure 9. Distortion vs. output Power
Id (mA) THD (%)
240 10

Vi = 0
220 Vs= 14.4 V
RL = 4 Ohm 1 RL = 4 Ohm

200 f = 10 KHz
0.1
180

0.01 f = 1 KHz
160

140 0.001
8 10 12 14 16 18 0.1 1 10
Vs (V) Po (W)

Figure 7. Output power vs. supply voltage. Figure 10. Distortion vs. output power
Po (W) THD (%)
80 10
75 Po-max
70 Vs= 14.4 V
65
60 1 RL = 2 Ohm
RL= 4 Ohm
55 f= 1 KHz f = 10 KHz
50 THD= 10 %
45 0.1
40
35
30
25 THD= 1 % 0.01 f = 1 KHz
20
15
10
5 0.001
8 9 10 11 12 13 14 15 16 17 18 0.1 1 10
Po (W)
Vs (V)

Figure 8. Output power vs. supply voltage. Figure 11. Distortion vs. frequency.
Po (W) THD (%)
130 10
120 Po-max
110
100 1 Vs = 14.4 V
90 RL= 2 Ohm
RL = 4 Ohm
f= 1 KHz THD= 10 %
80 Po = 4 W
70 0.1
60
50
40 THD= 1 %
30 0.01
20
10
8 9 10 11 12 13 14 15 16 17 18 0.001
Vs (V) 10 100 1000 10000
f (Hz)

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TDA7560

Figure 12. Distortion vs. frequency. Figure 15. Output attenuation vs. supply volt.
THD (%) OUT ATTN (dB)
10

0
RL = 4 Ohm
1 Vs = 14.4 V
RL = 2 Ohm Po= 4 W ref.
-20
Po = 8 W

0.1 -40

-60
0.01

-80
0.001 -100
10 100 1000 10000
f (Hz) 5 6 7 8 9 10
Vs (V)

Figure 13. Crosstalk vs. frequency. Figure 16. Output noise vs. source resistance.
CROSSTALK (dB) En (uV)
90 130
120
80 110 Vs= 14.4 V
RL= 4 Ohm
70 100
90
60 80
50 RL = 4 Ohm
70
22-22 KHz lin.
Po = 4 W 60
40 Rg = 600 Ohm 50
40 "A" wgtd
30
30
20
10 100 1000 10000 20
f (Hz) 1 10 100 1000 10000 100000
Rg (Ohm)

Figure 14. Supply voltage rejection vs. freq. Figure 17. Power dissipation & efficiency vs.
output power (sine-wave operation)
SVR (dB) Ptot (W) n (%)
100 90 90
90 80 n 80
Vs= 13.2 V
80 70 70
RL= 4 x 4 Ohm
70 60 f= 1 KHz SINE
60

60 50 50

50 40 40
Rg= 600 Ohm
30 30
40 Vripple= 1 Vrms Ptot
20 20
30
10 10
20
10 100 1000 10000 0 0
f (Hz) 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
Po (W)

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TDA7560

Figure 18. Power dissipation vs. ouput power Figure 19. Power dissipation vs. output power
(Music/Speech Simulation) (Music/Speech Simulation)
Ptot (W) Ptot (W)
30 60
Vs= 13.2 V
55 RL= 4 x 2 Ohm
Vs= 13.2 V
50 GAUSSIAN NOISE
25 RL= 4 x 4 Ohm
GAUSSIAN NOISE CLIP START
45
20 40 CLIP START
35
30
15
25
20
10 15
10
5 5
0 1 2 3 4 5 6 0 2 4 6 8 10
Po (W) Po (W)

3 DC Offset Detector
The TDA7560 The TDA7560 integrates a DC offset detector to avoid that an anomalous DC offset on the
inputs of the amplifier may be multiplied by the gain and result in a dangerous large offset on the outputs
which may lead to speakers damage for overheating.
The feature is enabled by the MUTE pin and works with the amplifier umuted and with no signal on the
inputs. The DC offset detection is signaled out on the HSD pin.

4 Application Hints (ref. to the circuit of fig. 4)


4.1 SVR
Besides its contribution to the ripple rejection, the SVR capacitor governs the turn ON/OFF time sequence
and, consequently, plays an essential role in the pop optimization during ON/OFF transients.To conve-
niently serve both needs, ITS MINIMUM RECOMMENDED VALUE IS 10µF.
4.2 INPUT STAGE
The TDA7560's inputs are ground-compatible and can stand very high input signals (± 8Vpk) without any
performances degradation.
If the standard value for the input capacitors (0.1µF) is adopted, the low frequency cut-off will amount to
16 Hz.
4.3 STAND-BY AND MUTING
STAND-BY and MUTING facilities are both CMOS-COMPATIBLE. In absence of true CMOS ports or mi-
croprocessors, a direct connection to Vs of these two pins is admissible but a 470 kOhm equivalent resis-
tance should present between the power supply and the muting and stand-by pins.
R-C cells have always to be used in order to smooth down the transitions for preventing any audible tran-
sient noises.
About the stand-by, the time constant to be assigned in order to obtain a virtually pop-free transition has
to be slower than 2.5V/ms.
4.4 HEATSINK DEFINITION
Under normal usage (4 Ohm speakers) the heatsink's thermal requirements have to be deduced from fig.
18, which reports the simulated power dissipation when real music/speech programmes are played out.
Noise with gaussian-distributed amplitude was employed for this simulation. Based on that, frequent clip-
ping occurence (worst-case) will cause Pdiss = 26W. Assuming Tamb = 70°C and TCHIP = 150°C as bound-
ary conditions, the heatsink's thermal resistance should be approximately 2°C/W. This would avoid any
thermal shutdown occurence even after long-term and full-volume operation.

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TDA7560

5 Package Information
Figure 20. Flexiwatt25 (vertical) Mechanical Data & Package Dimensions

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.45 4.50 4.65 0.175 0.177 0.183 OUTLINE AND
B 1.80 1.90 2.00 0.070 0.074 0.079 MECHANICAL DATA
C 1.40 0.055
D 0.75 0.90 1.05 0.029 0.035 0.041
E 0.37 0.39 0.42 0.014 0.015 0.016
F (1) 0.57 0.022
G 0.80 1.00 1.20 0.031 0.040 0.047
G1 23.75 24.00 24.25 0.935 0.945 0.955
H (2) 28.90 29.23 29.30 1.139 1.150 1.153
H1 17.00 0.669
H2 12.80 0.503
H3 0.80 0.031
L (2) 22.07 22.47 22.87 0.869 0.884 0.904
L1 18.57 18.97 19.37 0.731 0.747 0.762
L2 (2) 15.50 15.70 15.90 0.610 0.618 0.626
L3 7.70 7.85 7.95 0.303 0.309 0.313
L4 5 0.197
L5 3.5 0.138
M 3.70 4.00 4.30 0.145 0.157 0.169
M1 3.60 4.00 4.40 0.142 0.157 0.173
N 2.20 0.086
O 2 0.079
R 1.70 0.067
R1 0.5 0.02
R2 0.3 0.12
R3 1.25 0.049
R4 0.50 0.019
V
V1
5˚ (T p.)
3˚ (Typ.)
Flexiwatt25 (vertical)
V2 20˚ (Typ.)
V3 45˚ (Typ.)
(1): dam-bar protusion not included
(2): molding protusion included

B
V
H
H1
V3
H2 A
H3
O

R3

R4
L4

V1
R2
N
L2

R
L L1
V1
L3

V2

R2 D
R1

L5 R1 R1
Pin 1
E
G G1 F
FLEX25ME
M M1

7034862

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TDA7560

6 Revision History

Table 4. Revision History


Date Revision Description of Changes

December 2001 1 First Issue

February 2005 2 Improved value from 75 to 20µA of the “ST_BY Current Consumption”
parameter in the table 3 at the page 3.

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TDA7560

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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All other names are the property of their respective owners

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