Influence of tin ion implantation on the

damage and annealing kinetics of sapphire

Carl J. McHargue, L. J. Romana

By: Younes Sina & Uk Huh

To remove any residual polishing damage or surface contamination

Crystal Systemic (Salem, MA)

120 h at 1450⁰C
α-Al203
Oxygen

α-Al203
 α-Al203
Sn (180 keV)
5x1015
1x1016
2x1016
4x1016 /cm2
Beam 7⁰ off-normal
Room Temperature
 α-Al203
Sn (180 keV, 4x1016 /cm2)
Room Temperature

70 nm

α-Al203

amorphous
 RBS
Annealing at
700⁰C, 900⁰C
960⁰C ,1100 ⁰C

at air or Ar-4% H2
1h
TEM
α-Al203 α-Al203
Sn (180 keV, 4x1016 /cm2)
Room Temperature
RBS-ion channeling using 2 MeV He+ for Al2O3 implanted
with 119 Sn+/cm2 at room temperature
RBS-ion channeling using 2 MeV He+ for Al2O3 implanted
With 4x1016 119 Sn+/cm2 at room temperature and annealed
1 h in air at 1100 ⁰C. (a) Al- sublattice
RBS-ion channeling using 2 MeV He+ for Al2O3 implanted
With 4x1016 119 Sn+/cm2 at room temperature and annealed
1 h in air at 1100 ⁰C. (b) Sn
RBS-ion channeling using 2 MeV He+ for Al2O3 implanted
With 4x1016 119 Sn+/cm2 at room temperature and annealed
1 h in Ar-4% H2 at 960 ⁰C. (a) Al- sublattice
RBS-ion channeling using 2 MeV He+ for Al2O3 implanted
With 4x1016 119 Sn+/cm2 at room temperature and annealed
1 h in Ar-4% H2 at 960 ⁰C. (b)Sn
 RBS-ion channeling from Al using 2 MeV He+ for Al2O3
implanted
With 4x1016 119 Sn+/cm2 at room temperature and annealed
1 h in Ar-4% H2 at 1100 ⁰C
 70 nm

Annealing temperature:
α-Al203
700⁰C- <900⁰C

amorphous

70 nm

Annealing temperature:
α-Al203
900⁰C

amorphous
5 nm

γ-Al203

Epitaxial Recrystallization
 70 nm

Annealing temperature:
α-Al203
700⁰C- <900⁰C

amorphous

70 nm
amorphous

Annealing temperature:
α-Al203
960⁰C

50 nm

γ-Al203

Epitaxial Recrystallization
 SnO2 particles coherent with both phases
70 nm
mp SnO2= 1730⁰C

α-Al203 Annealing temperature:

α-Al203
1100⁰C at air ,1h

40 nm
This α-Al203 contains γ-Al203
significant disorder
due to presence of
SnAl2O4
70 nm

α-Al 0 Annealing temperature:

α-Al203 α-Al2203 3
1100⁰C at Ar-4% H2
There is a tendency for Sn to migrate toward the free surface

About 97% of SnO2 reduces as Sn and leave the

This α-Al203 contains sample, 3% in form of SnAl2O4 remains
significant disorder 1100⁰C at Ar-4% H2
due to presence of Sn (II) & Sn (IV) Sn0
mp Sn= 232⁰C
SnAl2O4
Thank you