Professional Documents
Culture Documents
POWER MOS V ®
Power MOS V® is a new generation of high voltage N-Channel enhancement
TO-264
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
S
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
THERMAL CHARACTERISTICS
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.3
Z JC, THERMAL IMPEDANCE (°C/W)
D=0.5
0.1
0.2
0.05
0.1
0.05
Note:
0.01
PDM
0.02 t1
0.005
0.01 t2
SINGLE PULSE
Duty Factor D = t1/t2
θ
050-5567 Rev B
0.001
10-5 10-4 10-3 10-2 10-1 1.0 10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
APT12080LVR
30 30
VGS=5V, 6V, 7V, 10V & 15V VGS=5V, 6V, 7V, 10V & 15V
18 18
4.5V 4.5V
12 12
6 6
4V 4V
0 0
0 120 240 360 480 600 0 5 10 15 20 25
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
1.15
30
VGS=10V
1.10
VGS=20V
20
TJ = -55°C 1.05
TJ = +125°C
10
TJ = +25°C 1.00
0 0.95
0 2 4 6 8 0 8 16 24 32 40
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, RDS(ON) vs DRAIN CURRENT
16 1.15
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
ID, DRAIN CURRENT (AMPERES)
1.10
VOLTAGE (NORMALIZED)
12
1.05
8
1.00
4
0.95
0 0.90
50 75 100 125 150 25 -50
-25 0 25 50 75 100 125 150
TC, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
3.0 1.2
I = 0.5 I [Cont.]
D D
V = 10V
GS
VGS(TH), THRESHOLD VOLTAGE
2.5 1.1
2.0 1.0
(NORMALIZED)
(NORMALIZED)
1.5 0.9
1.0 0.8
0.5 0.7
050-5567 Rev B
0.0 0.6
-50-25 0 25 50 75 100 125 150 -50
-25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
APT12080LVR
100 30,000
10µS
50
ID, DRAIN CURRENT (AMPERES)
OPERATION HERE
100µS
LIMITED BY RDS (ON) 10,000 Ciss
C, CAPACITANCE (pF)
10 5,000
1mS
5
10mS Coss
1,000
1
100mS 500 Crss
.5 TC =+25°C
TJ =+150°C DC
SINGLE PULSE
.1 100
1 5 10 50 100 500 1200 .01 .1 1 10 50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
20 100
I = I [Cont.]
D D
50
TJ =+150°C TJ =+25°C
16
VDS=120V
VDS=240V 10
12
5
VDS=600V
8
1
.5
4
0 .1
100 200 0
300 400 500 600 0 0.4 0.8 1.2 1.6 2.0
Qg, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
4.60 (.181)
5.21 (.205) 19.51 (.768)
1.80 (.071) 20.50 (.807)
2.01 (.079)
3.10 (.122)
3.48 (.137)
5.79 (.228)
6.20 (.244)
Drain
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.29 (.090) 2.69 (.106)
2.69 (.106)
19.81 (.780) Gate
21.39 (.842)
Drain
Source
0.48 (.019) 0.76 (.030)
0.84 (.033) 1.30 (.051)
2.59 (.102) 2.79 (.110)
3.00 (.118) 3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
050-5567 Rev B
APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058