Schottky (net i density) J = current/Area = JST[exp(VD/VT) -1]

MOS xdT = (4εs * ΦFP / (e*NA))1/2 (ptype) (4εs * ΦFN / (e*ND))1/2 (ntype)
VFB = (Φm - Φs) – Qoxide/Cox Qox in coulombs not electrons
Vox = Qox/Cox = depletion area charge VG - VFB = Vox + Ψs (band bend @ surface)
QSD max = e*NA*xdT Vthreshold = QSD max/Cox + VFB + 2ΦFP
ΦFP = -Vtln(NA/ni) Cox = εox / tox (εox = 3.9*8.85…) per area
Cap of depletion -> use correct ε and xdT (Cox for inversion)
For VG > VTN charge Qi = Cox(VG-VT) builds in oxide
Pinch off: VGS – VDS(sat) = Vt Peak ID at VDS(sat)
Non saturation ID = (W/L)μnCox[(VGS-VTN)VDS – (VDS)2/2]
Linear ID = (W/L)μnCox(VGS-VTN)VDS
Saturation ID = = W/(2L)μnCox(VGS-VTN)2
Power = CVdd2f f = frequency
Amplifier load line: VDS = Vdd - IDRD
Transconductance: non-saturation gmL = (W/L)μnCox VDS
saturation gms = (W/L)μnCox(VGS-VTN)
cutoff freq fT = μn(VGS-VTN)/(2πL2)
For MOS at threshold, e- conc at surface = NA in bulk
fF(E) ~ exp((EF – E)/KT) n0 = NCexp((EF – EC)/KT) p0 = NVexp((EV – EF)/KT)
ni2 = NVNCexp(-Eg/KT) n0+NA = p0+ND
EF is 3KT from bands n0 = niexp((EF – EFi)/KT) p0 = niexp((EFi – EF)/KT)
n0 = .5[ND-NA + sqrt([ND-NA]2 + 4ni2)]
Drift current J = (enμn + epμp)ε Dn = KT/e * μn
pn junction Vbi = ΦFN - ΦFp = KT/e * ln(NAND/ ni2) Fermi lvl diff before joining
Wdepletion = sqrt[2εs(Vbi – VR)/e * (NA + ND)/(NAND)] Current J = JS[exp(VD/VT) -1]
K = 1.38E-23 J/K = 8.62E-5 eV/K e = 1.602E-19 J ε0 = 8.85E-14 F/cm
300K Nc Nv ni εR μn μp Eg χ
Si 2.8E19 1.04E19 1.5E10 11.7 1350 480 1.12 4.01eV
X is energy from conduction band to free electron level (plus V ox)
Φm is energy from EF in metal to free electron level
Φs is energy from EF in SC to free electron level
MOS Substrate bias QSD max = sqrt[2eεNA(2ΦFP + VSB)]
pn junction / BJT injected minority carriers: p n(0) = pn0exp(eVa/KT)
LP = sqrt(DpTp) pn(x) = pn0 + (pn(0) - pn0)exp(-x/LP)
ideal pn junction Jp(xn) = (eDppn0/LP)[exp(eV/KT) - 1]
Jn(-xp) = (eDnnp0/Ln)[exp(eV/KT) -1]
J = Jp + Jn = Js(exp(eV/KT) - 1)
γ - ratio of majority carrier current to total current in emitter (emitter efficiency)
αT - base transport factor, ratio of collector majority to emitter majority
α = γαT common base current gain β = α/(1- α) = α(I E/IB)
If W << LP then (for PNP, base hole conc) pn(x) = pn(0)(1-x/W)
PNP active current densities IEp = ICp = (eDppn0/W)exp(eV/KT)
IEn = (eDEnE0/WE)(exp(eV/KT)-1) ICn = eDCnC0/LC
IB = (eDnnE0/WE)exp(eV/KT) tB = W2/(2DnB) VA = QpB/CdBC
fT = 1/(2πtB)