MCC



omponents
S9013
TM

Micro Commercial Components 20736 Marilla Street Chatsworth


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Features
• TO-92 Plastic-Encapsulate Transistors
• Capable of 0.625Watts(Tamb=25 OC) of Power Dissipation. NPN Silicon
• Collector-current 0.5A
• Collector-base Voltage 40V Transistors
• Operating and storage junction temperature range: -55OC to +150 OC
• Marking Code: S9013
Pin Configuration
TO-92
A E

C
BE
Electrical Characteristics @ 25OC Unless Otherwise Specified
B
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
V(BR)CBO Collector-Base Breakdown Voltage 40 --- Vdc
(IC=100uAdc, IE =0)
V(BR)CEO Collector-Emitter Breakdown Voltage 25 --- Vdc
(IC=0.1mAdc, IB =0)
V(BR)EBO Emitter-Base Breakdown Voltage 5.0 --- Vdc
(IE =100uAdc, IC=0) C
ICBO Collector Cutoff Current --- 0.1 uAdc
(VCB=40Vdc, IE =0)
ICEO Collector Cutoff Current --- 0.1 uAdc
(VCE=20Vdc, IB =0)
IEBO Emitter Cutoff Current --- 0.1 uAdc
(VEB =5.0Vdc, IC=0)
ON CHARACTERISTICS D
hFE(1) DC Current Gain 64 300 ---
(IC=50mAdc, V CE=1.0Vdc)
hFE(2) DC Current Gain 40 --- ---
(IC=500mAdc, V CE=1.0Vdc)
VCE(sat) Collector-Emitter Saturation Voltage --- 0.6 Vdc
(IC=500mAdc, IB =50mAdc)
VBE(sat) Base-Emitter Saturation Voltage --- 1.2 Vdc G
(IC=500mAdc, IB =50mAdc)
DIMENSIONS
VEB Base- Emitter Voltage --- 1.4 Vdc
(IE =100mAdc) INCHES MM
DIM MIN MAX MIN MAX NOTE
SMALL-SIGNAL CHARACTERISTICS A .170 .190 4.33 4.83
B .170 .190 4.30 4.83
fT Transistor Frequency 150 --- MHz C .550 .590 13.97 14.97
(IC=20mAdc, V CE=6.0Vdc, f=30MHz) D .010 .020 0.36 0.56

CLASSIFICATION OF HFE (1)

E .130 .160 3.30 3.96
G .010 .104 2.44 2.64
Rank G H I
Range 120-150 150-200 190-300

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Revision: 3 2004/07/26