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    1 views3 pages

    4N25

    Uploaded by

    nanodocl5099

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF or read online from Scribd
    Flag for inappropriate content
    of 3
    4N25, 4N26, 4N27, 4N28 OPTOCOUPLERS: ‘COMPATIBLE WITH STANDARD TTL INTEGRATED CIRCUITS © Gallium Arsenide Diode Infrared Source Optically Coupled to @ Silicon N-P-N Phototransistor (© High Ditect-Currant Transfer Ratio © High-Vairage Eiacrrcal letation 2. 5:KV, 1.6-RV, of 0.6-KV Rating (© Plastic Duslin-Line Packege © High'Spood Switching ... ty = 28, 14 = 2us Typical mechanical data ‘The nackage consists at galum arsenide ntraraa.omiting dado and an 9.0 elican phototransietet mounted On 12 Bend frame encapsulated within an electieally nonconduetve plastic compound. The cove wil withsiand soldering temperature with no deformation and device gerlormance characterstice remain stable when operated in high hurniaty conditions. Unit weight is approximately 0:52 grams. => =—|— FALLS WITHIN JEDEC MO.001 AM DIMENSIONS ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AUD BANENTHETICALLY IN INCHES absolute maximum ratings 25°C froe-aie temperature (unless otherwise noted) *Paak Input-to-Output Voltage: N25, 22.6Ky 4N20, 4N27 Shek anze sky *Cotector Base Vonage yov *Goliector-Emitter Voltage (See Note 1 nov EmitterColector voltage av Emitter Bose Voltege ry “Input Diode Reverse Voltage av *input-Diode Corninuous Forwars Current & lor below! 25°C Ftes-Air Temperature (See Note 2) 20 mA “Input Doge Peak Forwerd Curent ity = 200 93, duty cycle ~ 2%) 3A “Continuous Power Dissipation at for below! 25°C Free: Air Temperature Intrarea-Emting Diode (See Note 31 160 mw Photetantisor [See Note 3 150 mw Tota, nkared:Emtting Diode plus Phototransistor Gee Note 4) 250 mw *Storage Temperature Range = 88°C 10 15050 “Load Temperature 1.8 mm (1/16 inen) trom Case for 10 Saconas 260% PGI OA ers nee, Fp ee ene eas vane tecmes Texas Se Ce epee INSTRUMENTS: 4N25, 4N26, 4N27, 4N28 ‘OPTOCOUPLERS: ‘lectrical characteristics at 25°C free-air temperature (unless otherwise noted! ‘oases wate] ] PARAMETER TEST CONDITIONS panes ante a a8 yr | "igaighg Colac tase Wamaoan Wolawe [ES ToOwR BO] 70 70 TT Tenet Coletta rita Sestaows Votes TT RA ig = Oo = 9 = 7 ee ee Se peas ne Raa a OV 720 aes Tein Orsi eens Coren Weg toviig= 0 toma | 2 6 | 1 3 [oa rite Coc Caren Slope xs 'cton {Photodiode Operation) Mop = 10 V. le = 0. ie = 20 ” Scag ie Comet Carew, or — — ‘Cott Photovansistor Operation’ ‘ce @ © 2 cam aH Sie Caldas og Ty ve Sete ‘Cror {Photodiode Operation? ‘ce * * Sepa Ss FeV resp Tera nara are aoe wloE em | oe ts oe eT FE iv to ae 1 3 : Sigavionanas. ana! os aox iow sow | 19 nour Qua el tee ThEhy fo ane Teepe mone [mar 20 See EE 7 7 jana ae ated btanes bth pu ne ede shred pth aa ma pelts essere opt! 8 26°C roe air tomporature PARAMETER "Teer consmmoNs we air To Rafe] Provoaneaer [Veo =T0V. @ = 0. ‘ion = PRA z . to Fel Te person RL 100.6, S00 Toot Creut A of Bure = * BL Bat Tine} ~Pratadiade BER TOV =O ean = + ~ Far Te Geran AU = 1G. See Tost Creu Bol Panne 1 z PARAMETER MEASUREMENT INFORMATION, ‘elon! = 2 (Ton Gres) or ‘etont ~20uA Men Creu 8t eon Nae a Test cincurt 8 PROTOTRANSISTOR OPERATION VOLTAGE WAVEFORME PHOTEDIODE OPERATION Figure + ~ smrenina Times Texas 3 2 INSTRUMENTS IMPORTANT NOTICE ‘Texas instruments (TI reserves the raht io make changes to its products oro discontinue any semiconductor productor service without natce, and advises ils customers ta obtain the latest version ofreleyantinormation fo verily, before placing order, tha the information being relied on a current. “warrants performance of ts semiconductor products and related software tothe specifications applicable at the time of sale in accordance with Tle slandard warranty, Testing and other quably cowtol techngues are uilized to the extent TI deems necessary to support this warranty. Specific tasting of ali parameters of each

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