PD - 94372C

IRF7338
HEXFET Power MOSFET
l l l l

Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel

S1 G1 S2 G2

N-CHANNEL MOSFET 1 8 2 7

D1 D1

N-Ch VDSS 12V

P-Ch -12V

D2 D2

P-CHANNEL MOSFET

RDS(on) 0.034 0.150

Top View

Description
These N and P channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. This Dual SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques.

SO-8

Absolute Maximum Ratings

Parameter
VDS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ, TSTG Drain-to-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range

Max.
N-Channel 12 6.3 5.2 26 2.0 1.3 16 12 -55 to + 150 8.0 P-Channel -12 -3.0 -2.5 -13

Units

W mW/C V C

Thermal Resistance
Symbol
RJL RJA

Parameter
Junction-to-Drain Lead Junction-to-Ambient

Typ.

Max.
20 62.5

Units
C/W

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1
6/2/03

IRF7338
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter V(BR)DSS Drain-to-Source Breakdown Voltage N-Ch P-Ch N-Ch P-Ch N-Ch RDS(ON) Static Drain-to-Source On-Resistance P-Ch VGS(th) gfs Gate Threshold Voltage Forward Transconductance N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. 12 -12 0.6 -0.40 9.2 3.5 Typ. 0.01 -0.01 6.0 9.6 7.6 13 26 27 34 25 640 490 340 80 110 58 Max. 0.034 0.060 0.150 0.200 1.5 -1.0 20 -1.0 50 -25 100 100 8.6 6.6 1.9 1.3 3.9 1.6 Units V V/C V S A nA Conditions VGS = 0V, ID = 250A VGS = 0V, ID = -250A Reference to 25C, ID = 1mA Reference to 25C, ID = -1mA VGS = 4.5V, ID = 6.0A VGS = 3.0V, ID = 2.0A VGS = -4.5V, ID = -2.9A VGS = -2.7V, ID = -1.5A VDS = VGS, ID = 250A VDS = VGS, ID = -250A VDS = 6.0V, ID = 6.0A VDS = -6.0V, ID = -1.5A VDS = 9.6V, VGS = 0V VDS = -9.6 V, VGS = 0V VDS = 9.6V, VGS = 0V, TJ = 55C VDS = -9.6V, VGS = 0V, TJ = 55C VGS = 12V VGS = 8.0V N-Channel ID = 6.0A, VDS = 6.0V, VGS = 4.5V P-Channel ID = -2.9A, VDS = -9.6V, VGS = -4.5 V N-Channel VDD = 6.0V, ID = 1.0A, RG = 6.0, VGS = 4.5V P-Channel VDD = -6.0V, ID = -2.9A, RG = 6.0, VGS = -4.5V pF N-Channel VGS = 0V, VDS = 9.0V, = 1.0MHz P-Channel VGS = 0V, VDS = -9.0V, = 1.0KHz

V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient

IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss

Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance

nC

ns

Source-Drain Ratings and Characteristics

Parameter IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. Typ. Max. Units Conditions 6.3 -3.0 A 26 -13 1.3 TJ = 25C, IS = 1.7A, VGS = 0V V -1.2 TJ = 25C, IS = -2.9A, VGS = 0V 51 76 N-Channel ns 37 56 TJ = 25C, IF = 1.7A, di/dt = 100A/s 43 64 P-Channel nC TJ = 25C, IF = -2.9A, di/dt = -100A/s 20 30

Notes:

Repetitive rating; pulse width limited by

max. junction temperature. Pulse width 400s; duty cycle 2%.

Surface mounted on 1 in square Cu board. The N-channel MOSFET can withstand 15V VGS max
for up to 24 hours over the life of the device.

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N-Channel

IRF7338
VGS 7.5V 4.5V 4.0V 3.5V 3.0V 2.7V 2.0V BOTTOM 1.5V TOP

100

ID, Drain-to-Source Current (A)

10

ID, Drain-to-Source Current (A)

VGS 7.5V 4.5V 4.0V 3.5V 3.0V 2.7V 2.0V BOTTOM 1.5V TOP

100

10

1.5V
0.1

1.5V

20s PULSE WIDTH Tj = 25C

0.01 0.1 1 10 0.1 0.1 1

20s PULSE WIDTH Tj = 150C

10

VDS , Drain-to-Source Voltage (V)

VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

100

100.0

ID, Drain-to-Source Current ( A)

T J = 25C T J = 150C
10

ISD, Reverse Drain Current (A)

T J = 150C 10.0

1.0 T J = 25C VGS = 0V 0.4 0.6 0.8 1.0 1.2 1.4

1 1.0 2.0

VDS = 10V 20s PULSE WIDTH

3.0 4.0

0.1

VGS , Gate-to-Source Voltage (V)

VSD, Source-toDrain Voltage (V)

Fig 3. Typical Transfer Characteristics

Fig 4. Typical Source-Drain Diode Forward Voltage

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IRF7338
2.0

N-Channel

I D = 6.3A

R DS (on) , Drain-to-Source On Resistance ( )

0.12

0.10

RDS(on) , Drain-to-Source On Resistance

1.5

0.08

(Normalized)

VGS = 3.0V

1.0

0.06 VGS = 4.5V

0.04

0.5

0.02

V GS = 4.5V
0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160

0.00 0 5 10 15 20 25 30 ID , Drain Current (A)

TJ , Junction Temperature

( C)

Fig 5. Normalized On-Resistance Vs. Temperature

Fig 6. Typical On-Resistance Vs. Drain Current

RDS(on) , Drain-to -Source On Resistance ( )

0.05

80

60
0.04

Power (W)
0.03

40

ID = 6.3A

20

0.02 3.0 4.0 5.0 6.0 7.0 8.0

0 0.00 0.00 0.00 0.01 0.10 1.00 10.00

VGS, Gate -to -Source Voltage (V)

Time (sec)

Fig 7. Typical On-Resistance Vs. Gate Voltage

Fig 8. Typical Power Vs. Time

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N-Channel

IRF7338
12 ID= 6.0A

1000

VGS , Gate-to-Source Voltage (V)

VGS = 0V, f = 1 MHZ C iss = C gs + C gd , C ds SHORTED Crss Coss = Cgd = C + Cgd ds

800

10 8 6 4 2 0

VDS= 12V

C, Capacitance (pF)

Ciss
600

Coss
400

200

Crss

0 1 10 100

0.0

2.0

4.0

6.0

8.0

10.0

12.0

VDS, Drain-to-Source Voltage (V)

Q G Total Gate Charge (nC)

Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage

Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage

100

D = 0.50

(Z thJA)

0.20 10 0.10

Thermal Response

0.05

0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE)

P DM t1 t2 Notes: 1. Duty factor D = 2. Peak T t1/ t 2 +TA 1 10

J = P DM x Z thJA

0.1 0.00001

0.0001

0.001

0.01

0.1

t 1, Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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IRF7338
7.0

N-Channel

VDS
6.0

RD

VGS RG VGS
Pulse Width 1 s Duty Factor 0.1 %

D.U.T.
+

5.0

ID , Drain Current (A)

-VDD

4.0

3.0

2.0

Fig 13a. Switching Time Test Circuit

VDS 90%

1.0

0.0 25 50 75 100 125 150

TC , Case Temperature

( C)

Fig 12. Maximum Drain Current Vs. Case Temperature

10% VGS
td(on) tr t d(off) tf

Fig 13b. Switching Time Waveforms

Current Regulator Same Type as D.U.T.

QG

50K 12V .2F .3F

VGS

QGS VG

QGD
VGS
3mA

D.U.T.

+ V - DS

Charge

IG

ID

Current Sampling Resistors

Fig 14a. Basic Gate Charge Waveform

Fig 14b. Gate Charge Test Circuit

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P-Channel

IRF7338
VGS -7.5V -4.5V -4.0V -3.5V -3.0V -2.7V -2.0V BOTTOM -1.5V TOP

100

-I D, Drain-to-Source Current (A)

10

-I D, Drain-to-Source Current (A)

VGS -7.5V -4.5V -4.0V -3.5V -3.0V -2.7V -2.0V BOTTOM -1.5V TOP

100

10

-1.5V
1

-1.5V
1

20s PULSE WIDTH Tj = 25C

0.1 0.1 1 10 0.1 0.1 1

20s PULSE WIDTH Tj = 150C

10

-V DS , Drain-to-Source Voltage (V)

-V DS , Drain-to-Source Voltage (V)

Fig 15. Typical Output Characteristics

Fig 16. Typical Output Characteristics

100

100.0

-I D, Drain-to-Source Current ( A)

-I SD, Reverse Drain Current (A)

10.0 T J = 150C

10

T J = 25C T J = 150C

1.0 T J = 25C

1 1.0 2.0

VDS = -10V 20s PULSE WIDTH

3.0 4.0

0.1 0.4 0.6 0.8 1.0 1.2

VGS = 0V 1.4 1.6

-V GS , Gate-to-Source Voltage (V)

-V SD, Source-toDrain Voltage (V)

Fig 17. Typical Transfer Characteristics

Fig 18. Typical Source-Drain Diode Forward Voltage

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IRF7338
2.0

P-Channel

I D = -3.0A

RDS (on) , Drain-to-Source On Resistance ( )

0.20 0.18 0.16 0.14 0.12 0.10 VGS = -4.5V 0.08 0.06 0 2 4 6 8 10 12 14 -I D , Drain Current (A)

RDS(on) , Drain-to-Source On Resistance

1.5

(Normalized)

1.0

VGS = -2.7V

0.5

V GS = -4.5V
0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature

( C)

Fig 19. Normalized On-Resistance Vs. Temperature

Fig 20. Typical On-Resistance Vs. Drain Current

RDS(on) , Drain-to -Source On Resistance ( )

0.12

80

60
0.10

Power (W)
0.08

40

ID = -3.0A

20

0.06 2.0 3.0 4.0 5.0 6.0 7.0 8.0

0 0.00 0.00 0.00 0.01 0.10 1.00 10.00

-V GS, Gate -to -Source Voltage (V)

Time (sec)

Fig 21. Typical On-Resistance Vs. Gate Voltage

Fig 22. Maximum Avalanche Energy Vs. Drain Current

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P-Channel
800

IRF7338
ID= -2.9A

-V GS , Gate-to-Source Voltage (V)

VGS = 0V, f = 1 MHZ C iss = C gs + C gd , C ds SHORTED Crss Coss =C gd = Cds + Cgd

12 10 8 6 4 2 0 VDS = -9.6V VDS= -6.0V

600

C, Capacitance (pF)

Ciss
400

200

Coss Crss

0 1 10 100

10

- -V DS, Drain-to-Source Voltage (V)

Q G Total Gate Charge (nC)

Fig 23. Typical Capacitance Vs. Drain-to-Source Voltage

Fig 24. Typical Gate Charge Vs. Gate-to-Source Voltage

100

D = 0.50

(Z thJA)

0.20 10 0.10

Thermal Response

0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = 2. Peak T 0.1 0.00001 0.0001 0.001 0.01 0.1 t1/ t 2 +TA 1 10

J = P DM x Z thJA

t 1, Rectangular Pulse Duration (sec)

Fig 25. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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IRF7338
3.0

VDS
2.4

RD

VGS RG

D.U.T.
+

-I D , Drain Current (A)

1.8

VGS
Pulse Width 1 s Duty Factor 0.1 %
1.2

Fig 27a. Switching Time Test Circuit

0.6

td(on)

tr

t d(off)

tf

VGS
0.0 25 50 75 100 125 150

10%
TC , Case Temperature ( C)

Fig 26. Maximum Drain Current Vs. Case Temperature

90% VDS

Fig 27b. Switching Time Waveforms

Current Regulator Same Type as D.U.T.

50K

QG QGS VG QGD

12V

.2F .3F

VGS
-3mA

Charge

IG

ID

Current Sampling Resistors

Fig 28a. Basic Gate Charge Waveform

Fig 28b. Gate Charge Test Circuit

10

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D.U.T.

VDS

VDD

IRF7338
SO-8 Package Details
D A 5 B
DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMET ERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00

A1 .0040

6 E

5 H 0.25 [.010] A

c D E e e1 H

.050 BASIC .025 BASIC .2284 .0099 .016 0 .2440 .0196 .050 8

1.27 BASIC 0.635 BAS IC 5.80 0.25 0.40 0 6.20 0.50 1.27 8

6X

K L y

e1

K x 45 C 0.10 [.004] y 8X c

8X b 0.25 [.010]

A1 C A B

8X L 7

NOT ES : 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS . MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS . MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010]. 7 DIMENS ION IS THE LENGT H OF LEAD F OR S OLDERING T O A S UBS T RAT E. 3X 1.27 [.050] 6.46 [.255]

FOOT PRINT 8X 0.72 [.028]

8X 1.78 [.070]

SO-8 Part Marking

EXAMPLE: T HIS IS AN IRF7101 (MOS FET ) DAT E CODE (YWW) Y = LAS T DIGIT OF T HE YEAR WW = WEEK LOT CODE PART NUMBER
11

INT ERNAT IONAL RECT IFIER LOGO

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YWW XXXX F7101

IRF7338
SO-8 Tape and Reel
TERMINAL NUMBER 1

12.3 ( .484 ) 11.7 ( .461 )

8.1 ( .318 ) 7.9 ( .312 )

FEED DIRECTION

NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

330.00 (12.992) MAX.

14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IRs Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.6/03

12

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