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: t thm khng kh; N: S vng dy qun cun dy; S: Tit
din mch t; l
f
, l
0
: Chiu di trung bnh ng sc trong li st v
trong khng kh;
f
: t thm tng i ca vt liu st t.
b.Cun dy c nng di ng
H.8.7.Cun dy c nng di ng H.8.8.2 cun dy mc push-pull.
in cm L ca cun dy c nng di ng :
) ) ) ) . J
f f f f f f f
l l l S S S k l S l S
l
N
L + + + = . 1 2 1
0 0 0
2
2
0
Q Q Q
3.Bin p vi sai
Vi; L
2
= L
2
+ L
2
v R
2
= R
2
+ R
2
.
. J
. J . J
2 ' ' '
2 1
2
2 1 1 2 2 1
1
' ' '
)) ( ) ( ( ) ( ) (
) ( ) (
x M x M L L R R L R L j R R R
e x M x M R j
v
i i
i
m
!
[ [
[
4.Microsyn
Cun dy s cp c cung cp tn hiu sin e
s
c bin
ti a khong vi chc vn v tn s di 10kHz.Tn hiu
thu c cun th cp:
v
m
= 4asint ; ( gc dch chuyn b)
Hnh 6.11: Nguyen tac cau tao Microsyn
5.Bin tr in cm
S cp c cung cp i
1
= I
1
cos(t+); cun dy th cp
thu c in p c bin E
2
= M
0
I
1
cos; (:Gc lch
gia 2 cun dy, v tr ban u =/2 ).
Ta t: = +/2 nn E
2
= M
0
I
1
sin . Suy ra:
E
2
= M
0
I
1
, (i vi gc dch chuyn nh);
8.1.3.Cm bin dng in dung
1.Nguyn l v c tnh tng qut: y l nhng t in
dng phng hoc dng tr m mt trong nhng bn cc di
ng dn n s thay i in dung. i vi t phng: C =
0
A/D. i vi t in tr:
C= 2
r
0
l/Log(r
2
/r
1
).
Trng hp t in phng: S dch chuyn trong mt mt
phng song song vi mt bn cc c nh: A thay i, D
c nh. S dch chuyn trong mt phng thng gc vi
bn cc c nh: D thay i, A c nh.
Trng hp t in tr: l thay i dc trc.
Nhng cm bin in dung c lu bi cu to n
gin, cho php thc hin cm bin chc chn. in mi
s dng thng l khng kh.
2.T in c tit din thay i
a.T in n: in dung thay i tuyn tnh theo s dch chuyn x:
C(x) = K.x.
i vi t in xoay: K =
0
r
2
/360.D, x = : .
i vi t in tr: K = 2
0
/Log(r
2
/r
1
), x = l: m.
b.T in i vi sai: C
21
= C
0
(1+x/X); C
31
= C
0
(1- x/X); Vi KX = C
0
, X =
L/2 (L chiu di bn cc di ng i vi t in tr),
X =
M
/2 (
M
: gc to t tm ca bn cc di ng i vi t in
xoay).
3.T in c khong cch thay i
y l nhng t in o s dch chuyn thng.
a.T in n: C(d) =
0
A/(D
0
+d).
b.T in i: C
21
= C
0
/(1-(d/D
0
)); C
31
= C
0
/(1+(d/D
0
));
Vi:
0
A/D
0
= C
0
.
8.1.4.Cm bin o s dch chuyn
gii hn 2 u
Loi cm bin ny c c trng bi s khng c lin
kt c kh gia cm bin v vt chuyn ng, m bng s
lin kt ca mt trng c lin h vi v tr tng i ca
vt chuyn ng.
Trng cm ng t i vi nhng cm bin t tr thay
i, hiu ng Hall i vi vt liu khng t.
Trng in t i vi nhng cm bin dng in
Foucault.
Trng tnh in i vi nhng cm bin in dung.
Nhng u im ca cm bin o s dch chuyn gii hn
2 u: Bng thng rng, tin cy ln.
Nhng iu bt li: Khong o nh (c mm), hot ng
khng tuyn tnh.
1.Cm bin t tr thay i
in p th cp c dng khng tuyn tnh khi cun s cp
c cung cp tn hiu sin, bin tn hiu thu c: V
m
= V
m0
/(1+ax)
2
; x: Khong cch gia i tng v cm
bin; V
m0
: Ph thuc vo t thm, dng hnh hc v
kch thc i tng.
2.Cm bin dng in Foucault
in tr cun dy s cp gia tng:
R
1eq
= R
1
+ M
2
2
R
2
/(R
2
2
+L
2
2
2
).
in cm cun dy s cp gim:
L
1eq
= L
1
- M
2
2
L
2
/(R
2
2
+L
2
2
2
).
3.Cm bin hiu ng Hall
Hnh 8.19.Nguyn l hiu ng Hall.
in p hiu ng Hall: V
H
= K
H
IB
N
/e.
Hng s Hall K
H
= -1/qn; q: in tch m in t, n: Mt
m in t, B
N
: Thnh phn t trng theo trc z.
8.2.Cm bin o tc
Trong cng nghip, o tc quay thng gp. Trong trng hp o
vn tc dch chuyn thng ta thng quy v vic o vn tc quay trn, v
th cc cm bin o tc thng l cc cm bin o tc gc. Trong
cng nghip, cc cm bin dng o tc quay da trn nh lut
Faraday, l cc tc k loi in t. Khi cc chuyn ng c tnh
tun hon nh chuyn ng quay trn chng hn, vic o tc c th
bt u t vic o tn s, l cm bin o dch chuyn gii hn 2 u
m cm bin o t cch i tng mt khong cch thay i tun hon
v tn hiu thu c c tn s bng hoc l bi s (tu theo cu to ca
i tng) vi tn s chuyn ng. Loi tc k ny gi l tc k
loi xung. Trong trng hp nhng chuyn ng rt chm, v d gc
quay km hn 1 /1 gi, nhng phng php trn khng th p dng
c, khi ngi ta c th dng hi chuyn k Laser m nguyn tc
da trn s khc bit bc sng gia 2 sng t ngun Laser truyn
theo 2 chiu ngc nhau trong mt mi trng chuyn ng quay trn
v c th hin trong giao thoa k.
8.2.1.Cm bin o tc gc loi
in t
1.Tc k in t DC: Nh hnh trn.
Sc in ng thu c 2 u c gp:
E = pn
0
/2a ; p: S i cc; : vn tc gc; a: S
ng qun song song; n: S dy dn.
2.Tc k in t AC
a.My pht ng b: Gm 2 loi 1 pha v 3 pha.
Sc in ng thu c stator c dng: e = Esint. Vi: E
= K
1
; = K
2
; K
1
,K
2
ph thuc vo cu to my; : vn
tc quay ca rotor.
b.My pht khng ng b
Cun kch t c cung cp in p v
e
= V
e
cos
e
t. Cun dy o thu
c: e
m
= E
m
cos(
e
t+); Vi E
m
= KV
e
. Gc lch pha khong vi
. Khi rotor khng quay s xut hin 1 in p b (gi l in p
lch c mV) 2 u cun dy o, do cng ngh ch to khng hon
ton i xng: S khng i xng ca rotor hoc s b tr 2 cun
dy khng hon ton thng gc .
8.2.2.Tc k in t o tc thng
Trng hp s dch chuyn thng tng i ln, vic o vn tc
thng c qui v vn tc gc. Trng hp vn tc dch chuyn b
mt cm bin in t c hnh thnh nh 1 nam chm v 1 cun
dy, 1 trong 2 thnh phn ny c nh, thnh phn cn li c ni
vi i tng di ng cn xc nh vn tc. Sc in ng thu c
t cun dy: e = 2rnBV = lBV. Trong : r: Bn knh cun dy; n:
S vng dy qun cun dy; V: Vn tc dch chuyn; B: T trng
to bi phn cm.
8.2.3.Tc k loi tn hiu xung
S dng chi tit th nghim thng l 1 i c gn ln
trc quay cn xc nh vn tc gc. i thng c cu
to c dng tun hon, thng c chia lm p phn
bng nhau, mi phn c nh du mang mt c tnh
nh: l, rng v.v. Mt cm bin c t i din vi chi
tit th nghim, phn tch s phn t nh du i ngang
qua ng thi to ra mt tn hiu xung tng ng. Tn s
f ca tn hiu xung: f = pN (Hz). Vic chn cm bin c
gn lin vi loi vt liu lm i quay cng nh phn t
nh du trn i. iu li ca tc k loi xung l: Cu
to n gin, chc chn, bo qun d dng. Mt khc, n
khng to nn ting n, nhiu k sinh, hn na vic bin
i thnh tn hiu s rt n gin.
a.Cm bin t tr thay i
a bng vt liu st t c mang hnh p rng, p rnh. Cun dy c
t i din vi i cho php 1 t thng i qua n to ra t 1 nam
chm thng trc. Nh th cun dy s c sc in ng cm ng
m tn s t l vi vn tc quay. ln sc in ng thu c ty
thuc vo khong cch gia cun dy vi i v cn t l vi vn tc
quay. i vi nhng vn tc b, ln sc in ng thu c qu
nh ta gi l vng cht khng th o c.
b.Tc k quang hc
Gm 1 ngun sng + thu knh v 1b phn phn tch quang loi
diod hoc transistor quang. i quay c trang b nhng phn trong
sut v ngn sng xen k nhau. B phn phn tch quang nhn c
mt lng sng c iu khin bng a quay, s to nn tn hiu
c tn s t l vi vn tc quay, cn bin c lp vi vn tc.
Khong o vn tc ph thuc s phn t nh du trn a, bng
thng ca b phn phn tch v mch in i km.
c.Cm bin dng in Foucault
Trong cm bin ny, i quay bng vt liu khng
t tnh nhng dn in v c mang p rng, p rnh.
Cun dy c in cm L l 1 phn t ca mch
dao ng sin. Ta bit khi a 1 thanh kim loi n
gn cun dy th c tnh L v R cun dy thay
i, iu ny dn n s tt ca mch dao ng.
Nh th khi i quay, mi ln i a phn rng
n i din vi cun dy s lm tt mch dao
ng v iu ny c th phn tch c. Tn hiu
thu c c tn s t l vi vn tc quay v bin
ca n khng ph thuc vo vn tc ny, nn
khng c vng cht v thng dng o vn tc
b.
8.3.o nhit bng in tr
8.3.1. nhy nhit: Mt cch tng qut gi tr in tr ty thuc vo nhit
T: R(T)=R
0
.F(T-T
0
). R
0
: in tr nhit T
0
v hm F ph thuc
vo c tnh ca vt liu, c gi tr l 1 khi T=T
0
.
i vi in tr kim loi: R(T) = R
0
(1+AT+BT
2
+CT
3
); T tnh bng
0
C, T
0
= 0
0
C.
i vi nhit in tr bng oxyde kim loi: R(T) = R
0
.exp(B(1/T-1/T
0
)); T:
nhit tuyt i (
0
K).
Vi s thay i nh T ca nhit chung quanh gi tr T, s thay i in
tr c th c tuyn tnh ha:
R(T+ T) = R(T).(1+
R
T); Vi
R
= (1/R(T))dR/dT l h s ph thuc
nhit ca in tr hay cn gi nhy nhit nhit T,
R
ty
thuc nhit v vt liu. V d 0
0
C i vi platine
R
= 3,9x10
-3
/
0
C.
S thay i in tr theo nhit v nguyn l lin quan n s thay i
in tr sut v kch thc hnh hc ca in tr. Ta c:
R
=
l
.
Trong phm vi s dng c 10
-3
/
0
C trong khi
l
c 10
-5
/
0
C nh vy
trong thc t
R
.
8.3.2.in tr kim loi
Hnh 8.1.Cc in tr mu bng bch kim
Ty thuc vo nhit o m ngi ta chn vt liu thch hp, ngi ta
thng s dng in tr bng bch kim, nickel v i khi bng ng
hay tungstne.
Bch kim: C th cu to rt tinh khit (99,999%) iu ny cho php ta
bit c c tnh in ca n mt cch chnh xc. Thng s dng
nhit -200 n 1000
0
C.
Nickel: u im l nhy nhit rt cao, nickel chng li s oxyde ha,
thng c dng nhit <250
0
C.
ng: c s dng v c tuyn rt tuyn tnh. Tuy nhin d b oxyd
ha nn khng s dng nhit >180
0
C, v v in tr sut b nn
khi dng m bo c gi tr nht nh, chiu di dy phi ln gy nn
cng knh, bt tin.
Tungstne: nhy nhit ca in tr ln hn bch kim khi nhit
cao hn 100
0
K v n thng c s dng nhit cao hn bch
kim vi tuyn tnh hn bch kim. Tungstne c th cu to di dng
nhng si rt mnh cho php ch to in tr cm bin c tr s ln,
nh vy vi tr s in tr cho trc, chiu di dy s gim thiu.
8.3.3.Nhit in tr
Loi in tr ny c nhy nhit rt cao, vo khong 10 ln in tr
kim loi. Mt khc, h s nhit c gi tr m v ty thuc vo nhit .
Chng c cu to t hn hp cc oxyde kim loi nh: MgO, MgAl
2
O
4
,
Mn
2
O
3
, Fe
3
O
4
, CO
2
O
3
, NiO, ZnTiO
4
.Nhng oxyde kim loi bn dn
dng bt c nn li di p sut v c nung ln nng chy nhit
khong 1000
0
C v sau rt vo cc khun ri ngui hnh thnh
cc dng : a, tr, nhn..Cc vt liu c in tr sut ln cho php ch
to nhng in tr o c kch thc in tr b (c mm), kt qu: in
tr c kch thc b cho php o nhit chnh xc. Mt lng calo b
khin cho vn tc p ng cao. S n nh ca nhit in tr ty thuc
vo vic ch to v nhng iu kin s dng. Dng in tr kn hay
dng c v bc cho php che ch chng li s n mn ha hc. Nhit
s dng t vi tuyt i n li 300
0
C. Trn th trng nhit in
tr c tr s t 500 n vi chc M 25
0
C.
8.3.4.in tr silicium
Loi in tr bn dn ny c phn bit vi nhit in
tr bi nhng im sau:
H s nhit ca in tr sut c gi tr dng vo
khong 0,7x10
-2
/
0
C 25
0
C v s thay i theo nhit
ca h s nhit rt b, iu ny cho php ch to cm
bin c tnh tuyn tnh cao.
Phm vi s dng trong khong -50
0
C n 120
0
C, cc in
tr ny thng l loi bn dn N c ch to bi
phng php cho khuch tn cht khc vo tinh th n
cht silicium.
Vic kim sot cc thng s n nh tr gi in tr cho
php gim thiu sai s di 1% so vi danh nh. S thay
i theo nhit ca in tr sut ca silicium ph thuc
vo cch ch to v nhit .
8.4.o nhit bng cp nhit in
8.4.1.c tnh tng qut: Mt cp nhit in gm 2 dy dn A v B
c cu to bng vt liu khc nhau, ti im ni chung ca chng
c nhit T
2
, v 2 u cn li c nhit T
1
s xut hin sc in
ng nhit in (cn gi sc in ng Seebeck l kt qu ca
hiu ng Peltier v Thomson) c ln ph thuc vo vt liu A v
B cng nh s sai bit gia T
2
v T
1
. T
2
l nhit mi ni chung (
cn gi l mi ni o) l nhit T
c
t c khi t mi ni chung
trong mi trng nghin cu c nhit T
x
. Mi ni chun c nhit
T
1
c gi khng i v bng T
ref
.
2 1
/
T T
B A
E
Cp nhit in c cu to vi kch thc b, n cho php o nhit
chnh xc, s lng calo ca cm bin c thu nh cho php
vn tc p ng nhanh. Ngoi ra, tn hiu c to ra di dng sc
in ng m khng cn to ra dng in chy qua cm bin nh
vy trnh c hin tng t nng cm bin. Tuy nhin, n c
im bt li l trong khi o, nhit mi ni chun phi bit r, tt c
s khng chnh xc ca T
ref
s dn n s khng chnh xc cu T
c
.
Cp nhit in c cu to bi cc kim loi hoc hp kim khc
nhau v c khong o t -270
0
C n 2700
0
C, p ng ca cp nhit
in khng tuyn tnh khi nhit thay i ln, tnh khng tuyn tnh
c th hin qua cng thc sau:
E: Tnh bng V; T:
0
C; s phn t a
i
cng nh gi tr ca
n ph thuc vo cp nhit in v nhit o. Hoc n gin ta c
th s dng cng thc gn ng:
E = C(T
2
-T
1
)+K(T
2
2
T
1
2
); C, K l cc hng s.
nhy : l 1 hm theo nhit v thng khng
!
!
!
n i
i
i
i
T a E
0
c
C T
B A
c
dT
dE
T S
C
0
0
/
) ( !
vt qu 60V/
0
C
8.4.2.Cch s dng v lp t cm bin
1.Cch thc hin v bo v: Cn trnh nhng sc in ng k sinh trong
khi mc dy cm bin hoc do cu to khng ng nht ca cm bin
lm thay i c tnh nhit in ca cm bin. Nhng s khng ng
nht trong cu to c 3 nguyn nhn chnh:
Lc p c kh c c do s sp xp hoc do s cng dy, thng c
th loi b c nh s nung li.
Nhng tc ng ha hc: Hai dy dn phi c che ch chng li mi
tc nhn c th tc ng n chng, c bit iu ch vt liu phi tinh
khit.
Nhng tia bc x ht nhn gy ra nhng chuyn i trong vi hp kim
cp nhit in.
Phn hn mi ni cp nhit in phi c th tch gim thiu nhm trnh
nhng im c nhit khc nhau ti mi ni. Ba k thut hn c s
dng: Hn thic (cp nhit in loi T), hn t sinh bng gi (thng
s dng) v hn in.
2.Nhit chun
Ta bit rng sc in ng nhit in ph thuc vo s sai bit nhit
T
c
v nhit chun T
ref
, xc nh T
c
ta cn phn bit 3 trng
hp:
T
ref
gi nguyn khng i 0
0
C: Vic o sc in ng nhit in
cho php ta xc nh ngay nhit T
c
nh s dng bng c tnh
ca cp nhit in s dng.
T
ref
khng i nhng khc vi 0
0
C: Khi nhit mi trng thay i
ln, trong cng nghip ngi ta chn T
ref
khng i v ln hn nhit
mi trng. Bng cch s dng bng c tnh ca cp nhit in
s dng ta bit c , khi o sc in ng nhit in ca
cm bin, ta s tnh c:
t xc nh c T
c
.
T
ref
bng vi nhit mi trng: Khi bit trc nhit mi trng
T
a
ng thi tin hnh o sc in ng nhit in ca cm bin
nhit T
c
, t xc nh T
c
nh sau:
C T
B A
ref
E
0
0
/
C T
B A
T T
B A
C T
B A
ref ref c
c
E E E
0
0
0
/ /
0
/
+ =
C T
B A
T T
B A
C T
B A
a a c c
E E E
0 0
0
/ /
0
/
!
Trong trng hp ny cn c mch b nhit chun T
ref
(thay i
theo nhit mi trng) to nn in p
thay i t ng theo nhit mi trng (H.a). in p V(T
a
) c
c nh s dng nhit in tr R(T
a
) c gi nhit mi
trng v c mc vo cu Wheatstone DC. Cu ny cho php b
nhit khi nhit mi trng thay i xung quanh 0
0
C. Cc tr gi
R
0
, R
0
, R
0
c chn lm sao c:
C T
B A a
a
E T V
0
0
/
) ( !
C T
B A a R a
a
E T
R R
R R R
E T V
0
0
/
2
0 0
0 0 0
) (
) (
) ( =
+
= e
3.Phng php o
Hai phng php thng s dng o sc in ng
nhit in:
S dng millivn k c ni tr ln: Nh hnh trn. Gi R
t
l in tr cp nhit in, R
l
l in tr dy ni, R
v
l in
tr millivn k. kt qu o chnh xc ta cn phi c: R
v
>> R
t
+ R
l
.
Phng php bin tr: c trnh by phn 2.4, cho ta
kt qu chnh xc hn phng php millivn k
4.Dy b
Ngi ta lp t s dng chiu di dy dn cp nhit in ngn
nht, trong cc trng hp sau:
Trnh lm t dy dn cp nhit in khi m iu kin o s dng
dy dn cp nhit in rt mnh, khi ngi ta t xen k gia cp
nhit in v mch o cc dy A
v B
v B/B
c cng T
2
; Cc cp A
/B
v A/B c
cng sc in ng nhit in T
2
.
8.5.o nhit bng diod, transistor
8.5.1.c tnh tng qut, nhy nhit: Cc diod, transistor c mc
nh diod c cung cp dng in thun I khng i nh hnh a v
b, in p V 2 u cc ca chng ty thuc vo nhit , iu ny
c th xem nh tn hiu i ra t cm bin ty thuc vo nhit .
nhy S = dV/dT vo khong -2,5mV/
0
C v khng hon ton c lp
vi nhit , ci thin s tuyn tnh ta dng 2 transistor c cch
mc nh hnh c. nhy ca diod v transistor ln hn cp nhit
in. Phm vi o nhit t -50
0
C n 150
0
C, trong khong ny c
tnh in ca cm bin rt n nh.
8.5.2.S lin h in p v nhit
H.8.6:Cm bin transistor o nhit . a.So snh sai s tuyn tnh
transistor vi in tr bch kim v cp nhit in. b.Mch o.
1.Diod hay transistor mc nh diod:
V = V
1
T/T
1
+V(1-T/T
1
)+mKT/q.Log(T
1
/T); V: cao vng cm, i vi
silicium c tr gi 1,12V; m: Thng c tr gi gn bng 3; K: Hng s
Boltzman; T:
0
K.
2.in p sai bit gia 2 transistor: V
d
= KTLogn/q; Vi n = I
1
/I
2
8.6.o nhit bng IC
K thut vi in t cho php ch to nhng mch kt gm
nhng transistor ging nhau c s dng lm cm
bin hon ho o nhit da vo vic o s khc bit
in p V
BE
di tc ng ca nhit . Cc cm bin ny
to ra dng in hoc in p t l vi nhit tuyt i,
vi tuyn tnh cao, li th ca n l vn hnh n gin,
tuy nhin phm vi hot ng gii hn t -50
0
C n 150
0
C.
V d cm bin IC AD 590.
Cm bin ny to ra mt dng in thay i tuyn tnh
theo nhit tuyt i, c dng o nhit trong
trng hp dng dy dn vi khong cch xa. S n
gin v cu to cm bin nh hnh 8.8.
H.8.8: Cm bin o nhit dng IC AD 590. a.S nguyn l;
b.Mch o nhit ; c.Mch b tr
8.7.o nhit bng thch anh
Mt ng dng c in ca thch anh l thc hin b dao
ng c vng ln, tn s dao ng ch ph thuc vo
nhit . Bn thch anh c phng tinh th nh trc
c trng cho s thay i nhit nh hng n tn s
dao ng .
Khi dng lm cm bin o nhit , bn thch anh c
phng tinh th lm cho tn s dao ng thay i gn
nh tuyn tnh vi nhit ca bn thch anh. Cm bin
ny rt chnh xc v nhy, mt khc vic xc nh nhit
dn n vic m tn s c li do:
Vic o rt chnh xc.
Vic chuyn i ra dng s rt d dng i vi thng tin
lin quan n tn s.
8.7.1.Cng hng c ca thch anh
H.8.9.Tinh th thch anh: a.Dng tng qut. b.Tit din thng gc vi
trc quang.
Tinh th thch anh SiO
2
c dng lng knh 6 mt, cu trc ca n c
nhng c tnh vt l c th c trng bi 3 nhm trc:
Trc quang Z ni lin nhng im nh ca tinh th v trong mt
phng thng gc vi trc Z:
Ba trc in X, X
, X
,Y