bài giảng

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TS. Tr n Tr ng Minh TS. M nh C ng B mn T ng ha, Vi n i n, HBK H n i

H n i, 9 - 2010
Mc tiu:
Nm c cc kin thc c bn v qu trnh bin i nng lng in dng cc b bin i bn dn cng sut cng nh nhng lnh vc ng dng tiu biu ca bin i in nng. C hiu bit v nhng c tnh ca cc phn t bn dn cng sut ln. C cc khi nim vng chc v cc qu trnh bin i xoay chiu mt chiu (AC DC), xoay chiu xoay chiu (AC AC), mt chiu mt chiu (DC DC), mt chiu xoay chiu (DC AC) v cc b bin tn. Bit s dng mt s phn mm m phng nh MATLAB, PLEC, nghin cu cc ch lm vic ca cc b bin i. Sau mn hc ny ngi hc c kh nng tnh ton, thit k nhng b bin i bn dn trong nhng ng dng n gin.
Yu cu:
Nghe ging v c thm cc ti liu tham kho, S dng Matlab-Simulink m phng, kim chng li cc qu trnh xy ra trong cc b bin i, Cng c kin thc bng cch t lm cc bi tp trong sch bi tp.
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Ban quyen thuoc ve Bm Tu dong hoa XNCN-DHBKHN
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nh gi k t qu :
i m qu trnh: tr ng s 0,25 Ki m tra gi a k: 0,25 Thi cu i k: 0,75 T t c cc l n thi v ki m tra u c tham kh o t t c cc lo i ti li u (Open book examination).
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1. i n t cng su t; V Minh Chnh, Ph m Qu c H i, Tr n Tr ng Minh; NXB KH&KT H n i, 2009. 2. Phn tch v gi i m ch i n t cng su t; Ph m Qu c H i, Dng Vn Nghi; NXB KH&KT, 1999. 3. Gio trnh i n t cng su t; Tr n Tr ng Minh; NXB Gio d c, 2009. 4. H ng d n thi t k i n t cng su t; Ph m Qu c H i; NXB KH&KT 2009.
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in t cng sut (TCS) l mt chuyn ngnh thuc ngnh K thut in, chuyn nghin cu:
Bin i v S dng in nng
Thng qua cc phng php:

Bin i, iu khin, iu chnh, iu ha in p, Dng in, Tn s, H s cng sut cos
Cc tham s in nh:
trong cc qu trnh: Pht, truyn ti, phn phi,tch tr v ng dng nng lng in bng cch s dng cc thit b bn dn cng sut nh: Diode, Thyristor, Transistor, v cc h ca chng nh: GTO, IGCT, MOSFET, IGBT...
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Xu hng pht trin: di cng sut tri rng, t nh, n ln v rt ln. ng dng: rng khp, t cc thit b cm tay, dn dng n cc h thng thit b cng nghip. c bit: tham gia vo iu khin trong h thng nng lng. Xu hng
Vi W n vi trm W, thnh phn chnh trong cc h thng Power management ca cc thit b nh. Vi trm kW n vi chc MW. FACTS: h truyn ti, DG Distributed Generation, Custom Grid, Renewable Energy System,
V d
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S pht trin ca TCS lin quan n:

Cng ngh ch to cc phn t bn dn cng sut t c nhng bc tin ln. Cc tin b vt bc trong cng ngh cc phn t iu khin v l thuyt iu khin.
MOSFET, IGBT: tn s ng ct cao, chu c in p cao, dng in ln. Cc chip vi x l, vi iu khin, DSP 16 bit, 32 bit, nhanh, mnh v iu khin:
Tch hp ADC, u vo counter, PWM built-in; Truyn thng: I2C, CAN, UART,
Nguyn nhn pht trin
Cc d liu thc t
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Umrichter uG, fG ~ uNetz, fNetz variabel 3
Netz
f= 0 U=var.
Netz f=50 Hz -230 V u Netz -400 V

1 oder 3 Ph.
PV-Generator Wechselrichter
Netz
f= 0 P Hz, GW =X
~ 1 oder 3 Ph. Wechselrichter
WasserkraftAnlage
Gen. W
+ 500 kV
500 kV -
Gleichrichter
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Phn I: Nhng vn chung ca TCS v iu khin cc b bin i
in t cng sut trong h thng nng lng t trc n nay v t nay v sau.
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Cc b bin i in t cng sut.

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Cc lnh vc lin quan n in t cng sut.

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S khi chc nng ca b bin i.

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S cc lp mch ca b bin i.
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Cc phn t trong mch ca b bin i.

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T l khi lng v th tch cc phn t trong b bin i bn dn.

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Chuyn mch: vn cc k quan trng i vi cng sut ln. Ba loi chuyn mch: Cng (Hard switching), Snubbered, Soft-switching.
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Zero voltage switch - ZVS
Zero current switch - ZCS

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I.1 Nhng vn chung I.2 it I.3 Thyristor I.4 Triac I.5 GTO (Gate-Turn-off Thyristor) I.6 BJT (Bipolar Junction Transistor) I.7 MOSFET (Metal-Oxide Semiconductor Field Effect Transistor) I.8 IGBT (Insulated Gate Bipolar Transistor) Cn nm c:
Nguyn l hot ng Cc thng s c bn (c tnh k thut), cn thit la chn phn t cho mt ng dng c th.
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Cc van bn d n ch lm vi c trong ch kha

M d n dng: iV > 0, uV = 0; Kha: iV = 0, uV > 0; T n hao pV = iV*uV ~ 0;
Lu r ng ph n t bn d n ni chung ch d n dng theo m t chi u.

Mu n t o ra cc van bn d n hai chi u hai chi u ph i k t h p cc ph n t l i.
V kh nng i u khi n, cc van bn d n c phn lo i:

Van khng i u khi n, nh IT, Van c i u khi n, trong l i phn ra:
i u khi n khng hon ton, nh TIRISTOR, TRIAC, i u khi n hon ton, nh BIPOLAR TRANSISTOR, MOSFET, IGBT, GTO.
c tnh vn-ampe c a van l t ng: d n dng theo c hai chi u; ch u c i n p thep c hai chi u.
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C u t o t m t l p ti p gip p-n Ch d n dng theo m t chi u t anot n catot uAK >0 iD >0; Phn c c thu n. uAK < 0 iD = 0; Phn c c ng c
K hi u it
c tnh vn-ampe l t ng c a it
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c tnh vn-ampe c a it Gip gi i thch ch lm vi c th c t c a it Tnh ton ch pht nhi t (t n hao trn it) trong qu trnh lm vi c.
c tnh Vn-ampe th c t c a it
c tnh tuy n tnh ha: uD = UD,0 + rD*iD; rD = UD/ID

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c i m c u t o c a it cng su t (Power diode) Ph i cho dng i n l n ch y qua (c vi nghn ampe), ph i ch u c i n p ng c l n (c vi nghn vn); V v y c u t o c bi t hn l m t ti p gip bn d n pn thng th ng. Trong l p bn d n n c thm l p ngho i n tch nVng ngho n-, lm tng kh nng chu in p ngc, nhng cng lm tng st p khi dn dng theo chiu thun
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c tnh ng c t c a it c tnh ng uD(t), iD(t),
in tch phc hi Qrr
Thi gian phc hi trr
Khi m : i n p uFr l n ln n vi V tr c khi tr v gi tr i n p thu n c 1 1,5V do vng n- cn thi u i n tch
Khi kha: dng v n 0, sau ti p t c tng theo chi u ng c v i t c dir/dt n gi tr Irr r i v b ng 0.

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Cc thng s c b n c a it Gi tr dng trung bnh cho php ch y qua it theo chi u thu n: ID (A) Gi tr i n p ng c l n nh t m it c th ch u ng c, Ung,max (V) T n s , f (Hz) Th i gian ph c h i, trr (s) v i n tch ph c h i, Qrr (C)
Trang WEB c a ProtonElectrotex, Nga
T i sao l i l dng trung bnh?

Lin quan Cho v d : n qu trnh pht nhi t.
ID =
1 T
t0 + T
i ( t ) dt
D
t0
Kh nng ch u i n p: 3 gi tr ,
Repetitive peak reverse voltages, URRM Non repetitive peak reverse voltages , URSM Direct reverse voltages, UR
Khi t n s tng ln t n th t do qu trnh ng c t s ng vai tr chnh ch khng ph i l t n th t khi d n. Ba lo i it cng su t chnh:

1. Lo i th ng, dng t n s 50, 60 Hz. Khng c n quan tm n trr. 2. Lo i nhanh: fast diode, ultrafast diode. 3. Schottky Diode: khng ph i l lo i c ti p gip p-n. S t p khi d n r t nh , c 0,4 0,5 V, c th n 0,1 V. Dng cho cc ng d ng t n s cao, c n dng l n, i n p nh , t n th t r t nh . Ch ch u c i n p th p, d i 100 V.
Trang WEB c a PowerRex
http://www.proton-electrotex.com/ http://www.pwrx.com/
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C u t o: c u trc bn d n g m 4 l p, p-n-p-n, t o nn 3 ti p gip p-n, J1, J 2, J 3. C 3 c c:

Anode: n i v i l p p ngoi cng, Cathode: n i v i l p n ngoi cng, Gate: c c i u khi n, n i v i l p p gi a.
K hi u thyristor
L ph n t c i u khi n. C th kha c i n p ng c l n i n p thu n. Ch d n dng theo m t chi u t anot n catot uAK >0 ; Phn c c thu n. uAK < 0 ; Phn c c ng c
c tnh vn-ampe l t ng c a thyristor.

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Lp n- lm tng kh nng chu in p
Thyristor: C u trc bn d n v m ch i n tng ng.
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c tnh vn-ampe c a thyristor
1.
R t gi ng
c tnh ng c: UAK < 0.
c tnh ng c c a it.
2. c tnh thu n: UAK > 0. 2.1. Khi UGK = 0,
Cho n khi UAK < Uf,max thyristor c n tr dng i n. Cho n khi UAK = Uf,max tr khng gi m t ng t. c tnh chuy n ln o n i n tr nh nh it khi d n dng theo chi u thu n. c tnh chuy n ln o n i n tr nh t i UAK << Uf,max. i n p chuy n cng nh n u UGK cng l n.
2.2 Khi UGK > 0,
Ur: reverse voltage Uf: forward voltage
Trong m i tr ng h p thyristor ch d n dng c n u IV > Ih, g i l dng duy tr (Holding current).

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1. Gi tr dng trung bnh cho php ch y qua tiristor, IV

Lm mt t nhin: m t ph n ba dng IV. Lm mt c ng b c b ng qu t gi: hai ph n ba dng IV. Lm c ng b c b ng n c: c th s d ng 100% dng IV.
2. i n p ng c cho php l n nh t, Ung,max 3. Th i gian ph c h i tnh ch t kha c a thyristor, trr (s)

Th i gian t i thi u ph i t i n p m ln ant-catt c a tiristor sau khi dng iV v b ng 0 tr c khi c th c i n p UAK dng m tiristor v n kha. Trong ngh ch lu ph thu c ho c ngh ch lu c l p, ph i lun m b o th i gian kha c a van c 1,5 - 2 l n tr. trr phn bi t thyristor v t n s :
T n s th p: trr > 50 s; Lo i nhanh: trr = 5 20 s
trr cng nh, cng t
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4. T c tng dng cho php, dI/dt (A/s)

Thyristor t n s th p: dI/dt c 50 100 A/s. Thyristor t n s cao: dI/dt c 200 500 A/s.
Minh ha hiu ng dU/dt tc dng nh dng m van
5. T c tng i n p cho php, dU/dt (V/s)

Thyristor t n s th p: dU/dt c 50 100 V/s. Thyristor t n s cao: dU/dt c 200 500 V/s.
6. Thng s yu c u i v i tn hi u i u khi n, (UGK, IG)
Ngoi bin i n p, dng i n, r ng xung l m t yu c u quan tr ng. r ng xung t i thi u ph i m b o dng IV v t qua gi tr dng duy tr Ih
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Q1: M ch khuy ch i xung; IT: bi n p xung, c tc d ng cch ly gi a m ch l c v m ch i u khi n. R3: h n ch dng collector c a Q1. D1, DZ1: gi i thot nng l ng trn cu n s c p bi n p xung. D2: ch a xung dng ra c c i u khi n c a thyristor. R4: h n ch dng vo c c i u khi n. D3: ch ng i n p ng c t ln G-K v ti p gip G-K khng c ch t o ch u i n p ng c l n. C1: tng kh nng ch ng nhi u c a m ch i u khi n. R1, R2: l a ch n ty theo bin xung i u khi n. Gi tr tiu bi u: R1=5,6k, R2=2,3k.
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Triac, tng ng c p van song song ng c.
c tnh vn-ampe c a triac.
S v th d ng dng i n, i n p cho th y triac tng ng v i hai thyristor song song ng c, ch khng ph i l m t kha hai chi u ng ngha.
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uA1A2 > 0 I II IG > 0 IG > 0
uA1A2 <0 IG < 0 IG < 0
Do c i m c u t o nh y i v i tn hi u i u khi n c a triac khng gi ng nhau i v i hai chi u i n p.
Phng n t t hn c
M ch khuy ch i xung tiu bi u cho triac (cha tnh t i vi c cch ly gi a m ch ng l c v m ch i u khi n). C th s d ng optocoupler cch ly tn hi u i u khi n.
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GTO - C u trc bn d n . M ch i n tng ng hai tranzitor. c cng su t l n GTO c c u t o g m cc ph n t song song trn cng m t phi n silicon. K hi u (a) v (b).
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C hai lo i GTO u c dng trong cc m ch inverter ngu n p (VSI), trong GTO khng ph i ch u i n p ng c l n.
GTO - Lo i c anot ng n m ch. Gi a ti p gip p-n J1 c ng n m ch b i cc l p n+. V v y i n p ng c khi K+, A- ch cn l i n p nh trn ti p gip J3, c 15 V
GTO Lo i c it ng c. Ph n GTO gi ng h t nh hnh bn. Tuy nhin trn tinh th silicon tch h p lun m t it ng c.
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IG dng i u khi n, c bin l n n IGM, sau duy tr trong su t giai o n m . Khi kha l i dng m t n bin IGQM. tw r ng xung m , tAV r ng xung p m khi kha, tGM tr khi kha l nh ng thng s quan tr ng
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M ch khuy ch i xung kh ph c t p, i h i cng su t (dng i n) kh l n. Dng i u khi n khi kha l i ph thu c nhi u vo i u ki n khi kha (dng anot v khng nh th no).
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Thng s VDRM IT(AV)
Gi tr 4500V 400 A
Ghi ch i n p nh l p l i (Repetitive peak off voltage) Dng trung bnh (f=60Hz, d ng sin, gc d n 180) T c tng dng cho php Gi tr dng thu n c c i m GTO c th ng t c (m ch b o v Cs=0,7 F, Ls=0,3 H). Thi t b c th h ng n u n ph i ng t dng i n l n hn. i n p ng c c c i cho php. i n p ri thu n c c i. Dng d ng c c c i Dng d thu n c c i khi kha. Th i gian tr khi m . Th i gian tr khi ng t. Dng kha qua c c i u khi n. i n p trn c c i u khi n G-K tng ng IGT max. Dng i u khi n khi m
di/dt max 1000A/ s ITQRM 1000A
VRRM VTM IRRM IDRM tgt tgq IGQM VGT IGT
17V 4V Max. 100mA Max. 100mA Max. 10 s Max. 20 s Max. 300A 1,5V Max. 2500mA Max.
B ng cc thng s c b n c a GTO FG1000BV90DA (Mitsubishi) . Ti li u tham kh o: www.mitsubishichips.com /Global/files/manuals/gtot hyristors.pdf . FEATURE AND APPLICATION OF GATE TURN-OFF THYRISTORS. Aug.1998
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Cc lo i thyristor kha l i c b ng c c i u khi n: IGCT (INTEGRATED GATE COMMUTATED THYRISTOR) MCT (MOS CONTROLLED THYRISTOR) MTO (MOS TURN OFF THYRISTOR) ETO (EMITTER TURN-OFF THYRISTOR) Cc lo i GTO u c ng d ng trong d i cng su t l n, i n p cao, c bi t l trong cc h th ng i n t cng su t i u khi n trong h th ng i n (FACTS) ho c trong cc bi n t n cng su t l n. V d bi n t n 2000 kW t i nh my xi mng But sn.
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Th hi n c u trc n-p-n (bng ng c). Cc tranzito cng su t u l lo i ng c v t c ng c t nhanh hn. Dng i n trong c u trc l dng cc i n t , ch y t E n C. Theo quy c chi u dng i n, dng ch y t C n E. i n p C dng hn so v i E. Trong ch kha uBE < 0, do c hai ti p gip B-E V BC u phn c c ng c. Trong ch m uBE > 0, do c hai ti p gip B-E V BC u phn c c thu n, dng c th ch y qua c u trc bn d n.
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M ch i n xt ch ng c t c a BJT. Cc t k sinh CBC, CBE th hi n nh h ng m nh n qu trnh ng c t. G i l t k sinh v khng c th c, nhng xu t hi n khi m t ti p gip p-n b phn c c ng c (gi ng nh it).
1: uB< 0, van kha 2: uB=uB2 > 0, ti p gip B-E tr nn phn c c thu n. Dng b t u ch y qua van khi uBE = 0. 3: th i gian tr khi m , iC tng n Un/Rt, uCE gi m g n v 0. 4: i n tch l p y hai ti p gip, c u trc C-E ch cn l i n tr thu n Ron. 5: van m bo ha. 6: uB < 0, b t u kha van. Ti p gip B-E phn c c ng c, dng ng c c a it B-E di t n cc i n tch ra kh i ti p gip. 7: dng iC b t u gi m, uCE b t u tng. 8: ti p gip B-E th c s phn c c ng c, dng khng cn ch y qua c n a. uBE ti n t i uB1.
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c tnh ra IC(VCE) v i dng IB=const. c tnh t i VCE=VCC-IC*R, ng PQ. BJT l ph n t i u khi n b ng dng i n. H s khuy ch i dng =IC/IB; Ch s d ng nh m t kha i n t :
M bo ha:IB=kbh*IC/ , trong kbh =1,5 2 l n, g i l h s bo ha. Kha: IB=0.
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QR: c tnh bo ha; RS: ng gi i h n dng ICmax. QP: c tnh c t; PU: ng gi i h n UCEmax; i n p l n nh t c th t ln CE. UT: gi i h n hi u ng nh th ng th hai; TS: gi i h n cng su t t c th i l n nh t trn BJT.
P=VCE*IC < Pmax
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BJT l ph n t i u khi n b ng dng i n, yu c u cng su t i u khi n l n. Nh c i m ny c th kh c ph c nh cch n i Darlington. Tuy v y cch n i Darlington l i lm tng s t p VCE d n n tng t n hao cng su t. BJT c u i m s t p VCE nh nn c ch t o ng c t dng i n l n, n vi trm A, i n p cao n 1000V. BJT d n c thay th b i IGBT, m t ph n t c kh nng ng c t nh BJT v i u khi n b ng i n p, gi ng MOSFET.
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C u trc bn d n:
C c g c: S; C c mng: D; C c i u khi n: G;
K hi u
C c g c n i v i l p p, c c mng n i v i l p n, v v y bnh th ng khng c knh d n gi a D v S. C c G n m cch ly trong m t l p oxit kim lo i, c i n tr su t r t l n, cch ly hon ton v i c c g c v c c mng. Khi VGS dng n m t gi tr no , g i l ng ng, cc l p b y ra, cc i n t c thu ht n, t o nn m t knh d n gi a D v S. Dng i n c th i qua c u trc bn d n ny. Dng i n l dng cc i n t , cc h t mang i n c b n.
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c tnh ra ID(UDS) v i UGS=const, Khi m d n dng MOSFET nh m t i n tr thu n Ron, gi tr b ng nghing c a ng c tnh ra vng tuy n tnh. Ron c tnh ch t tng ln khi nhi t tng, ngha l c h s nhi t dng. V v y r t d ghp song song nhi u MOSFET.
c tnh i u khi n ID(UGS) v i UDS=const. Ng ng i n p c Ung~4-5V MOSFET m i m ra. Ni chung i n p i u khi n c 0 10V.
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M ch i n tng ng xt ch ng c t c a MOSFET. Cc t k sinh CGD, CGS, CDS xc nh cc qu trnh ng, c t. M c d l ph n t i u khi n b ng i n p nhng cc t k sinh yu c u dng phng, n p khi thay i m c i n p. Dng i n ny ph i do m ch khuy ch i xung (Driver) m b o.
c tnh khi m ra (a); kha l i (b).

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MOSFET l ph n t bn d n cng su t ngy cng tr nn quan tr ng, v:

L ph n t tc ng nhanh nh t, t n s ng c t ln n 1MHz. C th n i song song nhi u van m t cch d dng tng cng su t.
MOSFET c c k quan tr ng trong cc b bi n i c n t n s ng c t cao gi m nh kch th c cc ph n t ph n khng nh t i n v i n c m. c bi t l trong cc b ngu n xung, cc b bi n i c ng h ng, cc thi t b m kch th c nh g n l m t yu c u s ng cn. M c d l ph n t i u khi n b ng i n p nn dng i u khi n h u nh khng ng k , tuy nhin khi ng c t c n nh ng m ch khuy ch i xung chuyn d ng, g i l cc MOSFET Drivers m b o cung c p dng i n cho cc t k sinh thay i m c i n p.
c tnh khi m ra (a); kha l i (b).

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IGBT l ph n t k t h p c u i m c a BJT v MOSFET:

Gi ng BJT nn c th ng c t c dng i n l n, ch u c i n p cao. Gi ng MOSFET v i u khi n b ng i n p nn cng su t i u khi n nh , t n s ng c t cao.
IGBT l cu c cch m ng quan tr ng nh t i v i i n t cng su t ni chung. T khi ra i v a vo ng d ng IGBT lm cho cc b bi n i tr nn g n nh , tnh nng cao v c a vo nh ng ng d ng h t s c r ng ri.
K hiu IGBT v mch in tng ng nh s kt hp gia BJT v MOSFET.
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M ch i n tng ng kh o st ch ng c t. Cgc, Cge l nh ng t k sinh, nh h ng m nh nh t n c tnh ng c t c a IGBT.
Qu trnh m c a IGBT. Qu trnh kha c a IGBT. Th i gian kha ti1, ti2 , trong i2 g i l ui dng i n, lm tng ng k th i gian kha c a IGBT.
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-Pht hi n qu t i b ng cch theo di i n p UCE qua diode, qua phn p a vo chn DESAT. -M ch logic pht hi n trong th i gian c xung m n u c qu t i th UCE s tng ln, n kho ng 5 8V. -N u kha van l i ngay c th lm t c thay i dng qu l n (di/dt l n), gy nn qu i n p trn cc i n c m trong m ch, d n n ph h y van. -Gi i php l cho van kha l i d n d n b ng cch tng i n tr trong m ch G ln c 10 l n bnh th ng. Van s kha l i qua ch tuy n tnh, dng gi m t t , khng gy nn qu i n p.
Hnh nh van kha l i t t qua vng tuy n tnh, h n ch c t c thay i dng i n di/dt.
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IGBT c nh ng u i m c a BJT v MOSFET. Th i gian ng c t c a IGBT di hn so v i MOSFET. c bi t khi kha l i, do c hi u ng ui dng i n i2, gi ng nh dng bo ha c a BJT nn th i gian kha b ko di. Khc v i MOSFET, tn hi u i u khi n IGBT th ng l +15V m , -5V kha. IGBT cng c n cc m ch Driver chuyn d ng t o tn hi u i u khi n. M ch pht xung i u khi n cng c n c m ch b o v ch ng bo ha (desaturation protection).
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H t ph n m chng 1
u v
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28/08/2011

TS. Tr n Tr ng Minh TS. M nh C ng B mn T ng ha, Vi n i n, HBK H n i

Ban quyen thuoc ve Bm Tu dong hoa XNCN-DHBKHN

Ban quyen thuoc ve Bm Tu dong hoa XNCN-DHBKHN

Thng qua cc phng php:

Ban quyen thuoc ve Bm Tu dong hoa XNCN-DHBKHN

S pht trin ca TCS lin quan n:

Nguyn nhn pht trin

Umrichter uG, fG ~ uNetz, fNetz variabel 3

Netz f=50 Hz -230 V u Netz -400 V

~ 1 oder 3 Ph. Wechselrichter

Ban quyen thuoc ve Bm Tu dong hoa XNCN-DHBKHN

Phn I: Nhng vn chung ca TCS v iu khin cc b bin i

Phn I: Nhng vn chung ca TCS v iu khin cc b bin i

Cc b bin i in t cng sut.

Ban quyen thuoc ve Bm Tu dong hoa XNCN-DHBKHN

Phn I: Nhng vn chung ca TCS v iu khin cc b bin i

Cc lnh vc lin quan n in t cng sut.

Phn I: Nhng vn chung ca TCS v iu khin cc b bin i

S khi chc nng ca b bin i.

Ban quyen thuoc ve Bm Tu dong hoa XNCN-DHBKHN

Phn I: Nhng vn chung ca TCS v iu khin cc b bin i

Phn I: Nhng vn chung ca TCS v iu khin cc b bin i

Cc phn t trong mch ca b bin i.

Ban quyen thuoc ve Bm Tu dong hoa XNCN-DHBKHN

Phn I: Nhng vn chung ca TCS v iu khin cc b bin i

T l khi lng v th tch cc phn t trong b bin i bn dn.

Phn I: Nhng vn chung ca TCS v iu khin cc b bin i

Ban quyen thuoc ve Bm Tu dong hoa XNCN-DHBKHN

Zero voltage switch - ZVS

Zero current switch - ZCS

Ban quyen thuoc ve Bm Tu dong hoa XNCN-DHBKHN

Cc van bn d n ch lm vi c trong ch kha

Lu r ng ph n t bn d n ni chung ch d n dng theo m t chi u.

V kh nng i u khi n, cc van bn d n c phn lo i:

Ban quyen thuoc ve Bm Tu dong hoa XNCN-DHBKHN

c tnh tuy n tnh ha: uD = UD,0 + rD*iD; rD = UD/ID

Ban quyen thuoc ve Bm Tu dong hoa XNCN-DHBKHN

c tnh ng c t c a it c tnh ng uD(t), iD(t),

in tch phc hi Qrr

Thi gian phc hi trr

Khi m : i n p uFr l n ln n vi V tr c khi tr v gi tr i n p thu n c 1 1,5V do vng n- cn thi u i n tch

Khi kha: dng v n 0, sau ti p t c tng theo chi u ng c v i t c dir/dt n gi tr Irr r i v b ng 0.

T i sao l i l dng trung bnh?

Khi t n s tng ln t n th t do qu trnh ng c t s ng vai tr chnh ch khng ph i l t n th t khi d n. Ba lo i it cng su t chnh:

Trang WEB c a PowerRex

Ban quyen thuoc ve Bm Tu dong hoa XNCN-DHBKHN

C u t o: c u trc bn d n g m 4 l p, p-n-p-n, t o nn 3 ti p gip p-n, J1, J 2, J 3. C 3 c c:

c tnh vn-ampe l t ng c a thyristor.

Lp n- lm tng kh nng chu in p

Thyristor: C u trc bn d n v m ch i n tng ng.

Ban quyen thuoc ve Bm Tu dong hoa XNCN-DHBKHN

c tnh vn-ampe c a thyristor

c tnh ng c: UAK < 0.

2. c tnh thu n: UAK > 0. 2.1. Khi UGK = 0,

2.2 Khi UGK > 0,

Ur: reverse voltage Uf: forward voltage

Trong m i tr ng h p thyristor ch d n dng c n u IV > Ih, g i l dng duy tr (Holding current).

1. Gi tr dng trung bnh cho php ch y qua tiristor, IV

2. i n p ng c cho php l n nh t, Ung,max 3. Th i gian ph c h i tnh ch t kha c a thyristor, trr (s)

trr cng nh, cng t

Ban quyen thuoc ve Bm Tu dong hoa XNCN-DHBKHN

4. T c tng dng cho php, dI/dt (A/s)

Minh ha hiu ng dU/dt tc dng nh dng m van