有機トランジスタの基礎材料科学の基礎 6

6
Materials Science
1984 Kudo
FET 10-5 10-7 cm2/Vs

2
FET
FET 1 cm2/Vs
3
2,3 2,4 2,5 1,2

4 2 1,2
50 cm2/Vs
FET
4
2010 6
1. ............................................................................................................ 2
2. .................................................. 2
2.1 .................................................................. 2
2.2 ................................. 3
2.3 FET MOS-FET ......................................... 3
2.4 ......................................................... 4
3. .......................................................................... 5
3.1 .................................................................................. 5
3.2 ........................................................................ 6
3.3 TFT ............................................... 6
4. .........................................................................13
4.1 Cr/Au .................13
4.2 ......................14
4.3 .......................................................................15
4.4 FET .......................................................................16
5. ...........................................................................................................16
6. ...........................................................................................................17
EL 5
6
RFID 7
8
9
2.
2.1
1.
Organic Thin-Film TransistorOTFT

Organic Field-Effect Transistor
2-1
(A)
OFET
(B)
Gate
Gate
(A)
Gate
Gate
Gate
Gate
Gate
Gate
1950
(C)
(D)
Gate
Gate
Gate
Gate
Gate
Gate
Gate
Gate
AB
C
D 1 , 2
, 3 , 4 , 5 , 6
2-1
1980
2-1 AC
1983
FET 1
Tel:03-5796-7330Fax:03-5796-7335 E-mail:sialjpts@sial.com
2-1
BD
14
2-2
15,16
4
MIS
Metal Insulator Semiconductor
(A)
AB
C
D
Gate
Gate
Gate
Gate
Gate
Gate
Gate
Gate
10
(C)
Emitter
Emitter
(B)
Floating
Metal
FloatingMetal
n
n
11
Base
Base
2-2
Gate
Gate
A - B
C
Gate
Gate
p
p
Collector
Collector
2.3 FET MOS-FET
FET
MOSMetal-Oxide-SemiconductorMOSFET
2-3
Chemical Vapor Deposition
CVD
n-
n-
12,13
2.2
2.1
MIS-FET
OFFn-p-n
pn
OFF
pp
2-3 FET MOS-FET
MOS-FET
FET
/ p n
AsP
FET
OFF n-p-n OFF
FET /
OFF
FET FET
p p
MOS-FET
30 m
SUS
Tel:03-5796-7340Fax:03-5796-7345 E-mail:safcjp@sial.com
2.4
Organic FETOFET
Id
Vg
/ / MIS
MIS
2-5
1Vg 0 V Vd
Ld
Vg 2-5
2Vg VthVd
Vg-VthVg V
ground
s
2-4 FET
Vth
W L
Vg VthVg
FET
Vd
Id
Vd
Vg
2-5
3
Vg VthVd Vg-Vth Vd
Vd Vg-Vth
Vd Vd
Vg-Vth 2-54 Vd
L
2-4 FET
Vd Id
Id-Vd
W2 mmL100 m
-0.7
-250
Drain current (nA)
-0.5
-0.4
-0.3
-0.2
Drain current (A)
-0.6
-0.1
0
-250
-250
-200
-200
-150
-100
-50
0
0
V d
-50
-20 -40 -60 -80 -100 -120
Drain voltage (V)
2VgVthVd Vg -Vth
-150
-100
-50
0
0
-20 -40 -60 -80 -100 -120

Drain voltage (V)
Vg-100 V
Drain current (A)
Drain current (A)
-100
Vg-100 V
VgVs
1Vg0 V
-150
0
0
-20 -40 -60 -80 -100 -120

Drain voltage (V)
Vg0 V
-200
Vd
Id
3VgVthVdVg -Vth
-20 -40 -60 -80 -100 -120

Drain voltage (V)
Vg-100 V
4VgVthVdVg -Vth
2-5
3.
Si n
n-
3.1
C60 1.5 cm2/Vs n
22
10,000
10,000
1980
Processability
p HOMO
Highest
Occupied Molecular Orbital 5.0 eV

LUMOLowest Unoccupied Molecular Orbital 3.2
eV /
-5.1 eV -4.9 eV Au
HOMO p
Ca
-2.9 eVLUMO n
10-2 cm2/Vs FET
poly
9,9-dioctylfluorene-co-bithiophene
F8T223poly3-hexylthiophene
P3HT24,25P3HT
ambipolar 17
0.1 cm2/Vs
1 cm2/Vs
2009
Facchetti
26
3.2
p 50 cm /Vs
2
n 0.85 cm2/
Vs
p n
18,19
n
0.2 cm2/Vs n
3 cm2/Vs n 20,21
1980 OFET
p 27,281990
29,30 1 cm2/Vs
1 cm /Vs
1997
1 cm2/Vs 31
pn
3-2
1980
15
10-5 cm2/Vs 1 cm2/Vs
5 3-1
103
cm2/Vs
102
EL
10
1
46,47
10-1
10-2
10-3
10-4
10-5
1985
1990
1995
2000
2005
2010
2015
2004216P111
3-1 TFT
48
2000
TIPS-
Pentacene 32
33,34,35
3-2
1 cm2/Vs
36,37,38,39,40,41
3.2
FET
FET 3
/
Au Au
p n
EL
p
42,43,44,45
p
Au Cu49Ag50Ca51 ITO
Indium Tin Oxide52 53 54
PEDOT-PSS 55,56
5758
pn
Au 4.9 eV n
p
HOMO 59
60,61,62,63
3.3 FET
2-1p 2-2n 2-3
SiO2 64,65
Al2O366 Ta2O567OFET
SiO2
1 1
FET
HexamethyldisilazaneHMDS OctadecyltrichlorosilanOTS
OTS
PFOTS
1-1Aldrich 551112 50
-6T
- CYEPL
PVA
PVC
cm2/Vs
1-2Aldrich
698423 Vth
PMMA
OPV 1-3
68 PI
PVP
69,70
DNTT
1-4
FET
FET 12
1
1-1
Rubrene
Aldrich 551112
1-2
Podzorov, V.Sysoev, S.E.Loginova, E.Pudalov, V. M.Gershenson, M.E.,

Appl. Phys. Lett., 2003, 83, 3504.
Podzorov, V.Pudalov, V.M.Gershenson, M.E., Appl. Phys. Lett., 2003, 82,
1739.
Sundar, V.C.Zaumseil, J.Podzorov, V.Menard, E.Willett, R.L.
Someya, T.Gershenson, M.E.Rogers, J.A., Science, 2004, 303, 1644.
Takeya, J.Yamagishi, M.Tominari, Y.Hirahara, R.Nakazawa, Y.
Nishikawa, T.Kawase, T.Shimoda, T.Ogawa, S., Appl. Phys. Lett.,
2007, 90, 102120.
Pernstich, K.P.Haas, S.Oberhoff, D.Goldmann, C.Gundlach, D.J.
Batlogg, B.Rashid, A.N.Schitter, G., J. Appl. Phys., 2004, 96, 6431.
Pentacene
Takeya, J.Goldmann, C.Haas, S.Pernstich, K.P.Ketterer, B.Batlogg, B.,

J. Appl. Phys., 2003, 94, 5800.
Jurchescu, O.D.Popinciuc, M.Wees, B.J.Palstra, T.T.M., Adv. Mater.,
2007, 19. 688.
1-3
Oligo
p-phenylenevinylene
OPV
Nakanotani, H.Saito, M.Nakamura, H.Adachi, C., Appl. Phys. Lett.,

2009, 95, 033308.
1-4
Dinaphtho2,3-b:2',3'-f
thiopheno3,2-bthiophene
DNTT
Uno, M.Tominari, Y.Yamagishi, M.Doi, I.Miyazaki, E.Takimiya, K.

Takeya, J., Appl. Phys. Lett., 2009, 94, 223308.
Haas, S.Takahashi, Y.Takimiya, K.Hasegawa, T., Appl. Phys. Lett., 2009,
95, 022111.
Aldrich 698423
!
Aldrich
DNTT : Dinaphtho2,3-b:2',3'-f thiopheno
DPh-BDT : 2,6-Diphenylbenzo1,2-b:4,5-b
dithiophene
DPh-BTBT: 2,7-Dipheny1benzothieno3,2-b
benzothiophene
DT-BDT: 2,6-Ditolylbenzo1,2-b:4,5-b
dithiophene
3,2-bthiophene
!
WEB
:
2-1p 2
2-1PentaceneAldrich P1802,
684848, 698423 p
FET
75
2-4 FET
P3HT
FET
76
71,72
73
741 cm2/Vs
2-5 BDT
2-2
2-6 BTBT
2.0 cm2/VsHOMO
0.3 cm /Vs
BTBT
DNTT 2-7
2-3Copper
IIphthalocyanineCuPcAldrich
DNTT 2.9 cm2/Vs
546674, 702854 EL
p FET
0.02 cm2/Vs FET
7.9 cm2/Vs 77
2p
2-1
Klauk, H.Gundlach, D.J.Nichols, J.A.Jackson, T.N., IEEEE Trans. Electron

Devices, 1999, 46, 1258.,
Laquindanum, J.G.Katz, H.E.Lovinger, A.J.Dodabalapur, A., Chem. Mater.,
1996, 8, 2542.,
Dimitrakopoulos, C.D.Brown, A.R.Pomp, A., J. Apply. Phys., 1996, 80, 2501.,
Dimitrakopoulos, C.D.Mascaro, D.J., IBM J. Res. & Dev., 2001, 45, 11.
Pentacene
Aldrich P1802, 684848,
698423
2-2
Meng, H.Bendikov, M.Mitchell, G.Helgeson, R.Wudl, F.Bao, Z.Siegrist, T.

Kloc, C.Chen, C.-H., Adv. Mater., 2003, 15, 1090
2,3,9,10-Tetramethylpentacene
Me4PENT
2-3
CopperIIphthalocyanine
CuPc
Aldrich 546674, 702854
Bao, Z.Lovinger, A.J.Dodabalapur, A., Appl. Phys. Lett., 1996, 69, 3066.
2-4
Aldrich
Horowitz, G.Fichou, D.Peng, X.Xu, Z.Garnier, F., Solid State Commum.

1989, 72, 381.
2-5
2,6-Diphenylbenzo1,2-b:4,5-b
dichalcogenophene
DPh-BDX
Takimiya, K.Kunugi, Y.Konda, Y.Niihara, N.Otsubo, T., J. Am. Chem. Soc.,

2004, 126, 5084.
2-6
2,7-Diphenyl1benzothieno3,2-b
benzothiophene
DPh-BTBT
Takimiya, K.Kunugi, Y.Konda, Y.Ebata, H.Toyoshima, Y.Otsubo, T., J.

Am. Chem. Soc., 2006, 128, 3044.,
Takimiya, K.Ebata, H.Sakamoto, K.Izawa, T.Otsubo, T.Kunugi, Y., J. Am.
Chem. Soc., 2006, 128, 12604.
2-7
,3
-f thieno
3,2-b
Dinaphtho2,3-b:2
thiophene
DNTT
Yamamoto, T.Takimiya, K., J. Am. Chem. Soc., 2007, 129, 2224.

Uno, M.Doi, I.Takimiya, K.Takeya, J. Appl. Phys. Lett., 2009, 94, 103307.
Zschieschang, U.Ante, F.Yamamoto, T.Takimiya, K.Kuwabara, H.Ikeda,
M.Sekitani, T.Someya, T.Kern, K.Klauk, H. Adv.Mater., 2010, 22, 982.
2-4
Name
Structure
-Sexithiophene(6T)
S
S
5,5-Dihexyl-2,2:5,2:5,2:5,2:5,2-sexithiophene
(DH-6T)
S
S
594687-1G
S
S
S
CH3(CH2)4CH2
Cat. No.
S
S
CH2(CH2)4CH3
633216-500MG
sigma-aldrich.com/organicelectronics-jp
2-2n 3
2-8N,N'-dioctyl-3,4,9,10-perylene tetracarboxylic diimide

Aldrich 663913 n
0.6 cm2/Vs
1.8 cm2/Vs
Vth
2-11
2-12
HOMO
0.2 cm2/Vs
2-9Copper
II
1,2,3,4,8,9,10,11,15,16,17,18,22,23,24,25-hexadecafluoro29H,31H-phthalocyanineAldrich 446653
0.03 cm2/Vs
n
CMOS n
2-10 n
FET
SiO2 OTS 0.1
cm2/Vs
FET n
FET
C60
2-13Fullerene -C60Aldrich
572500, 379646, 483036 n
3
cm2/Vs
PCBM
2-14Aldrich 684457,
684449, 684430
n
0.2 cm2/Vs
78
79
3n
2-8
N,N'-dioctyl-3,4,9,10-perylene
tetracarboxylic diimide
PTCDI-C8HPTCDI-C8
Aldrich 663913
Malenfant, P.R.L.Dimitrakopoulos, C.D.Gelorme, J.D.Kosbar, L.L.

Graham, T.O.Curioni, A.Andreoni, W., Appl. Phys. Lett., 2002, 80, 2517.
2-9
CopperII1,2,3,4,8,9,10,11,15,16,17,
18,22,23,24,25-hexadecafluoro-29H,
31H-phthalocyanine
F16CuPc
Aldrich 446653
Bao, Z.Lovinger, A.J.Brown, L., J. Am. Chem. Soc., 1998, 120, 207.
2-10
Perfluoropentacene
Sakamoto, Y.Suzuki, T.Kobayashi, M.Gao, Y.Fukai, Y.Inoue, Y.

Sato, F.Tokito, S., J. Am. Chem. Soc., 2004, 126, 8138.
2-11
2,2'-Bis4-trifluoromethylphenyl
-5,5'-bithiazole
Ando, S.Murakami, R.Nishida, J.Tada, H.Inoue, Y.Tokito, S.

Yamashita, Y., J. Am. Chem. Soc., 2005, 127, 14996.
2-12
4,7-Bis5-4'-trifluoromethylphenyl
thiophen-2-ylbenzo1,2,5thiadiazole
Kono, T.Kumaki, D.Nishida, J.Sakanoue, T.Kakita, M.Tada, H.

Tokito, S.Yamashita. Y., Chem. Mater., 2007, 19, 1218.
2-13
Fullerene-C60
C60
Haddon, R.C.Perel, A.S.Morris, R.C.Palstra, T.T.M.Hebard, A.F.

Fleming, R.M., Appl. Phys. Lett., 1995, 67, 121.
Anthopoulos, T.D.Singh, B.Marjanov, N.Sariciftci, N.S.Ramil, A.M.
Sitter, H.Clle, M.Leeuw, D.M., Appl. Phys. Lett., 2005, 89, 213504.
Kinoshita, S.Sakanoue, T.Yahiro, M.Takimiya, K.Ebata, H.Ikeda, M.
Kuwabara, H.Adachi, C., Solid State Commum., 2008, 145, 114.
Haddock, J.N.Zhang, X.Domercq, B.Kippelen, B., Org. Electronics,
2005, 6, 182.
Aldrich 572500, 379646,

483036
2-14
6,6-Phenyl C61 butyric acid methyl
ester
PCBM60PCBM
Aldrich 684457, 684449,
684430
Chikamatsu, M.Itakura, A.Yoshida, Y.Azumi, R.Yase, K., Chem.

Mater., 2008, 20, 7366.
2-15
6,13-Bistriisopropylsilylethynyl
pentacene
TIPS-pentacene
Aldrich 716006
Anthony, J.E.Brooks, J.S.Eaton, D.L.Parkin, S.R., J. Am. Chem. Soc.,

2001, 123, 9482.
Payne, M.M.Delcamp, J.H.Parkin, S.R.Anthony, J.E., Org. Lett., 2004, 6,
1609.
Payne, M.M.Odom, S.A.Parkin, S.R.Anthony, J.E., Org. Lett., 2004, 6,
3325.
2-16
5,11-Bistriethylsilylethynylanthra
2,3-b:6,7-b' dithiophene
TES anthradithiophene
Payne, M.M.Parkin, S.R.Anthony, J.E.Kuo, C.C.Jackson, T.N., J. Am.

Chem. Soc., 2005, 127, 4986.
2-17
2,7-Dialkyl1benzothieno3,2-b
benzothiophene
alkyl-BTBT
Ebata, H.Izawa, T.Miyazaki, E.Takimiya, K.Ikeda, M.Kuwabara, H.

Yui, T., J. Am. Chem. Soc., 2007, 129, 15732.
Izawa, T.Miyazaki, E.Takimiya, K. Adv. Mater., 2008, 20, 3388.
Kang, M.J.Doi, I.Mori, H.Miyazaki, E.Takimiya, K.Ikeda, M.
Kuwabara, H., Adv. Mater., 2011, 23, 1222.
2-3 4
2-15
TIPS-PentaceneAldrich 716006
cm2/Vs TOFTime of Flight
FET
TIPS
0.17
cm2/Vs
1 cm2/Vs
3-2 6
90 3-4
3-5
80
2-16 1 cm2/Vs
A
SmA 10-4 cm2/
Vs ESmE 10-2 cm2/Vs

3-6
Lcol 10-3
cm2/Vs
3-7
C13 2.8 cm2/Vs
HOMO
SmH
BTBT 2-17
1 cm2/Vs
TOF SmH 0.1 cm2/
Vs
3-1 5
3-1
FET 0.14 cm2/Vs
H0.1 cm2/Vs
3-9 0.5 cm2/Vs
Mllen p
on/off 10715
3-2
PR-TRMC
Pulse-
Radiolysis Time-Resolved Microwave Conductivity

0.1 1 cm2/Vs
3-3 Colr Colh10-1
10
3-8
4 7
FET 90
4-1 3-
P3RT
3-1
2,3,6,7,10,11-Hexahexylthiotriphenylene
HHTT
Adam, D.Schuhmacher, P.Simmerer, J.Hussling, L.

Siemensmeyer, K. Nature 1994, 371, 141.
3-2
Alkyl-hexabenzocoronene
HBC
van de Craats, A.M.Warman, J. M.Fechtenktter, A.Brand, J. D.

Harbison, M. A., Mllen, K. Adv.Mater. 1999, 11, 1469.
3-3
1,4,8,11,15,18,22,
25-Octaoctylphthalocyanine
Iino, H.Hanna, J.Bushby, R. J.Movaghar, B.Whitaker, B. J.Cook, M.

J. Appl.Phys.Lett. 2005, 87, 132102.
3-4
2-4'-heptyloxyphenyl
-6-dodecylthiobenzothiazole
Funahashi, M.Hanna, J. Phys. Rev. Lett. 1997, 78, 2184.
3-5
2-4'-octylphenyl
-6-dodecyloxynaphthalene
8-PNP-O12
Funahashi, M.Hanna, J. Appl. Phys. Lett. 1997, 71, 602.
3-6
1Benzothieno
3,2-b
1
benzothiophene-2,7-dicarboxylate
BTBT
Mry, S.Haristoy, D.Nicoud, J.-F.Guillon, D.Diele, S.Monobe, H.

Shimizu, Y. J. Mater. Chem. 2002, 12, 37.
3-7
5-Propyl-5''''-henynyl-2,2':5',2'':
5'',2'''-quanterthiophene
3-QTP-yne-4
Funahashi, M.Hanna, J. Adv.Mater. 2005, 17, 594.
3-8
5,5'-Bis7-hexyl-9H-fluoren-2-yl
-2,2'-bithiophene
DHFTTF
Meng, H.Zheng, J.Lovinger, A. J.Wang, B.-C.Van Patten, P. G.Bao, Z.

Chem.Mater. 2003, 15, 1778.
3-9
Bis-5'-hexylthiophen-2'-yl
-2,6-anthracene
DHTAnt
Meng, H.Sun, F.Goldfinger, M.B.Jaycox, G. D.Li, Z.Marshall, W. J.

Blackman, G. S. J. Am. Chem. Soc. 2005, 127, 2406.
TM
Vol.4 No.3
TIPS
John E. Anthony
Tobin Marks
Iain McCullochMartin Heeney

Thomas Bjrnholm
www.sigma-aldrich.com/sacatalog-jp
11
FET 0.1 cm2/Vs P3RT
PF
PF 4-6 265
MEH-PPV P3RT
4-6
FET-LED
4-2
FET 0.1
0.1 cm /Vs
4-3
FET
5 m
0.15 cm2/Vs
1
4-4
0.6 cm2/Vs
4-5 4-4
FET
0.08 cm2/Vs Tg 150
2
0.2 cm2/Vs
5 8 PF
4-7 TOF FET

0.01 cm2/Vs
PF 4-8PF
0.01 cm2/Vs
0.25 cm2/Vs
4-1
Poly3-alkylthiophene
P3RT
Sirringhaus, H.Tessler, N.Friend, R.H. Science 1998, 280, 1741.

Bao, Z.Dodabalapur, A.Lovinger, A. J. Appl. Phys. Lett. 1996, 69, 4108.
4-2
Poly3,3'''-dialkyl-quaterthiophene
PQT
Ong, B. S.Wu, Y.Liu, P.Gardner, S. J. Am. Chem. Soc. 2004, 126, 3378.
4-3
Poly2,5-bis3-decylthiophen-2-yl
thieno2,3-bthiophene
Heeney, M.Bailey, C.Genevicius, K.Shkunov, M.Sparrowe, D.

Tierney, S.McCulloch, I. J. Am. Chem. Soc. 2005, 127, 1078.
4-4
Poly2,5-bis3-alkylthiophen-2-yl
thieno3,2-bthiophene
McCulloch, I.Heeney, M.Bailey, C.Genevicius, K.MacDonald,

I.Shkunov,M.Sparrowe, D.Tierney, S.Wagner, R.Zhang, W.
Chabinyc, M.L.Kline, R. J.McGehee, M. D.Toney M. F. Nat.Mater.
2006, 5, 328.
4-5
Poly2,5-bis2-thienyl-3,6-dialkylthieno
3,2-bthiophene
Li, Y.Wu, Y.Liu, P.Birau , M.Pan, H.Ong, B. S. Adv. Mater. 2006,

18, 3029.
4-6
Poly-9,9'-dioctyl-uorene-cobithiophene
F8T2
Aldrich 685070
Polytriarylamine
PTAA
Aldrich 702471
Sirringhaus, H.Wilson, R. J.Friend, R. H.Inbasekaran, M.Wu, W.

Woo, E. P.Grell, M.,Bradley, D. D. C. Appl. Phys. Lett. 2000, 77, 406.
4-7
4-8
Veres, J.Ogier, S.D.Leeming, S.W.Cupertino, D.C.Khaffaf, S. M. Adv.

Funct. Mater. 2003, 13, 199.
Poly9,9-dioctylfluorenyl-2,7-diyl
-co-4,4-N-4-sec-butylphenyl
diphenylamine
TFB
Fong, H. H.Papadimitratos, A.Malliaras, G. G. Appl.Phys.Lett. 2006, 89,

172116.
4-13-
Name
S-tructure
Mobility
Average Molecular Weight
Cat. No.
regioregular
445703-1G
104 - 101cm2/Vs
average Mn 25,00035,000
regioregular, electronic grade, Plexcore OS 1100
698989-250MG
698989-1G
698989-5G
104 - 101cm2/Vs
average Mn 45,00065,000
regioregular, electronic grade, Plexcore OS 2100
698997-250MG
698997-1G
Poly(3-hexylthiophene-2,5-diyl) (P3HT)
CH2(CH2)4CH3
S
n
*Plexcore is a registered trademark of Plextronics, Inc.

12
4.
4.1
Cr/Au
TFT
50 ml 10 ml
40 ml
photolithography
14
vol ratio
300 nm
70
n++-Si
10
10
dangling bond
3 2
pH pH
IPAisopropyl alcohol
3 IPA
IPA
50ml
100
HMDS
1,1,1,3,3,3Hexamethyldisilazane LOL1000Lift
off layerTSMR-8900
Orientation Flat
15mm
4-1
HMDS
1,000 rpm
30
110
100
HMDS 5
HMDS
HMDS
4-1
HMDS LOL
HMDS
LOL1000 0.45 m
111
HMDS
45
4,000 rpm 30
150
13
5 HMDS
2 LOL1000
Au Cr Au
Cr
TSMR-8900
EB
3,000 rpm 30
110 5
1.0 10-4 Pa
rpm
EB Cr 30 Au 500
y1
4 m
30
Cr Au
IPA
4-3
Cr/Au Micro
Posit Remover 1165
70
20 30
Au
NMD-3
30
2 IPA
4-2
4.2
FET
W
2mm
20
25mm
4mmW
4mm
100mm50mm25mm10mm5mm
UV/ UV/
UV253
1 3.7
mW/cm2 3 12 UV
4-2
(a)
Pt
TSMR-8900 m
100nm
Si
Au
BC
SiO2
LOLBC
SEM
mmol/L 100 ml
(b)
40
Au
Pt
BC
SiO2
LOLBC
SEM
4-3
14
1
110 5
HMDS
HMDS
110
HMDS
4 /
4-4
FET /
HMDS
FET /
110 5
n FET
Au
Cr
50 m
/
Si
HMDS
4-4HMDS
3
FET FET
5
10-4 Pa 2.0 /s 3.0 /s
300 500
4.3
FET
4-5
FET
Agilent
B1500A Keithley 4200-SCS
10-4 Pa 10-6 Pa
0.1 /s
0.5 /s 500
Triaxial
70
cableTXA
Coaxial cable BNC

TXA
L =100mm
L =150mm
L =200mm
L =50mm
TXA-
BNC
4-6
bBNC
(
)
a
TXA
(
)
a
FET
c
TXA-BNC
b
FET
TXABNC
4-6
4-5 FET
TXA
15
Ground
Q
xId
4-2
Ground
12
4-3
4-3Id x
Id x Id x 0 L
Id-Vd
4-4
300 nm
100V
4-3 V
0 0V
L Vd
20 V -100 V -10 V
Id-Vd
+20 V -100 V -1 V
4-5
4-7
a
Id-Vd
Id-Vg
4-6
-100 V
+20 V -100 V -1 V 4-7b
Id-Vg
-90V
-150
-80V
-100
-50
Drain current (A)
Drain current ( A)
Vg=-100V
-200
-70V
-60V
~20V
-3
10
-4
10
-5
Drain voltage (V)
0.012
10
-6
0.010
-7
0.008
10
-8
0.006
10
-9
0.004
-10
0.002
10
0.014
10
10
0
-140 -120 -100 -80 -60 -40 -20
Vd =-100 V
=0.7 cm2/Vs
Vth=-37 V
-11
-120 -100-80 -60 -40 -20
0.016
Drain current1/2 (A1/2 )
-250
10
Ci
0
0 20 40
Vg Vth Vg Vth
Vg
Vg-Vth
4-7
Vp dId/dVd 0
Gate voltage (V)
aFET Id -Vd
b
FETId -Vg
Vg =-100V
4-7 FET
W 2 mmL 100 m FET
4-8
4-7 Idsat
4-9
4.4 FET
Id-Vg
4-8 L FET
- 0
4-9
4-10
Q(x)V(x)F(x)
S
G
0
Id1/2-Vd WC/2L1/2
4-8 FET
WSiO2 d
r 3.9
m x
4-7 FET FET

0.7 cm2/VsVth -37 V
5.
- V
x
cm2/Vs n
2010 5 432
240 RGB EL
4-1
16
EL FET
FET
peri-Xanthenoxanthene
PXX
0.4 cm2/Vs FET
FET
2000
6.
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www.sigma-aldrich.com/sacatalog-jp
17
Name
Thieno[2,3-b]thiophene
Structure
S
Thieno[3,2-b]thiophene
Purity
95%
Catalog No.
702641-1G
702641-5G
95%
702668-1G
702668-5G
97%
710172-500MG
97%
691925-1G
691925-5G
95%
697400-1G
697400-5G
95%
688312-1G
97%
694258-1G
97%
456373-1G
456373-5G
456373-25G
515493-1G
515493-5G
S
S
Dithieno[3,2-b:2',3'-d]thiophene
2-Bromo-3-hexylthiophene
CH2(CH2)4CH3
S
S
Br
3-Hexylthiophene-2-boronic acid pinacol ester
2-Bromo-3-dodecylthiophene
CH2(CH2)10CH3
Br
5-Bromo-2-hexylthiophene
Br
CH2(CH2)4CH3
2,5-Dibromo-3-hexylthiophene
CH2(CH2)4CH3
Br
Br
5,5'-Dibromo-2,2'-bithiophene
99%
2,2'-Bithiophene-5,5'-diboronic acid bis(pinacol) ester
97%
647020-1G
647020-5G
3,3'-Dibromo-2,2'-bithiophene
97%
733725-1G
733725-5G
97%
699098-500MG
97%
701254-1G
97%
704199-1G
2,1,3-Benzothiadiazole-4,7-bis(boronic acid pinacol ester)
95%
702803-1G
4,7-Dibromobenzo[c]-1,2,5-thiadiazole
95%
693847-1G
693847-5G
4,7-Bis(2-bromo-5-thienyl)-2,1,3-benzothiadiazole
99.0% (HPLC)
732435-1G
97%
708283-500MG
95%
708267-500MG
>97%
731757-1G
97%
717274-5G
5,5''-Dibromo-2,2':5',2''-terthiophene
Br
Br
2-Bromo-7-hexyl-9H-fluorene
Br
4,4'-Biphenyldiboronic acid bis(pinacol) ester
CH2(CH2)4CH3
H3C
H3C
H3C
O
CH3
O
B
B
O
5-Fluoro-2,3-thiophenedicarboxaldehyde
CH3
CH3
CH3
CH3
H
H
S
O
2,8-Dibromo-6,12-dihydro-6,6,12,12-tetraoctylindeno[1,2-b]fluorene
CH2(CH2)6CH3
CH3(CH2)6CH2
Br
Br
CH3(CH2)6CH2
CH2(CH2)6CH3
9-Ethyl-9H-carbazole-3-boronic acid pinacol ester
1,3,6,8-Tetrabromopyrene
Br
Br
Br
Br
18
Name
Anthracene
Structure
Purity
sublimed grade 99%
Catalog. No.
694959-5G
694959-25G
max = 277 nm
em = 481, 514 nm in
dichloromethane-d2
698415-1G
Benz[b]anthracene
sublimed grade 99.99%

trace metals basis
Pentacene
triple-sublimed grade
99.995% trace metals basis
698423-500MG
sublimed grade
99.9% trace metals basis
684848-1G
Perylene

99.99 trace metal basis
max = 436 nm
em = 447 nm in
tetrahydrofuran
394475-1G
394475-5G
4,4'-Bis(N-carbazolyl)-1,1'-biphenyl (CBP,
DCBP)

trace metals basis
max = 532 nm
699195-1G
699195-5g
556696-500MG
556696-1G
sublimed grade 99%
N,N'-Di-[(1-naphthyl)-N,N'-diphenyl]-1,1'biphenyl)-4,4'-diamine (NPB, NPD)

N
Rubrene
sublimed grade
max = 299 nm
em = 550 nm in
tetrahydrofuran
551112-100MG
551112-1G
551112-5G
Bathocuproine

trace metals basis
max = 277 nm
em = 386 nm in
tetrahydrofuran
699152-500MG
sublimed grade 96%
max = 282 nm
ex = 305nm
em = 507 nm in
chloroform
694924-250MG
sublimed grade
max = 324 nm
ex = 324nm
em = 615 nm in
tetrahydrofuran
688118-250MG

trace metals basis
max = 259 nm
ex = 390nm
em = 519 nm
697737-1G
triple-sublimed grade
>99.99% trace metals basis
max = 678 nm
em = 404 nm
702854-500MG
sublimed grade Dye

content 99 %
max = 678 nm
em = 404 nm
546674-1G
546674-5G
N
CH3
H3C
Tris[2-phenylpyridinato-C2,N]iridium(III)
(Ir(ppy)3)
Ir
N
3
Tris[1-phenylisoquinoline-C2,N]iridium(III)
(Ir(piq)3)
Ir
N
3
Tris-(8-hydroxyquinoline)aluminum (Alq3)
N
O
N
Al
O
N
Copper(II) phthalocyanine (CuPc)

N
N
N
Cu
N
N
N
N
Fullerene-C60
sublimed 99.9%
572500-250MG
572500-1G
572500-5G
[5,6]-Fullerene-C70
sublimed,99 (HPLC)
709476-250MG
19
Materials Science
Aldrich Materials Science

Web Portal
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/ /
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CAS
Web
E-mail
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5-2
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5-3
4-2
35-4
4-3
6-1
4-4
2
6-2
5-1
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有機トランジスタの基礎 材料科学の基礎 6

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有機トランジスタの基礎 材料科学の基礎 6

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6

FET 10-5 10-7 cm2/Vs

2,3 2,4 2,5 1,2

Organic Thin-Film TransistorOTFT

2.3 FET MOS-FET

Chemical Vapor Deposition

2-3 FET MOS-FET

OFF n-p-n OFF

Drain current (nA)

Drain current (A)

-20 -40 -60 -80 -100 -120

Drain current (A)

Drain current (A)

-20 -40 -60 -80 -100 -120

-20 -40 -60 -80 -100 -120

C60 1.5 cm2/Vs n

Occupied Molecular Orbital 5.0 eV

10-2 cm2/Vs FET

10-5 cm2/Vs 1 cm2/Vs

2-1p 2-2n 2-3

Podzorov, V.Sysoev, S.E.Loginova, E.Pudalov, V. M.Gershenson, M.E.,

Takeya, J.Goldmann, C.Haas, S.Pernstich, K.P.Ketterer, B.Batlogg, B.,

Nakanotani, H.Saito, M.Nakamura, H.Adachi, C., Appl. Phys. Lett.,

Uno, M.Tominari, Y.Yamagishi, M.Doi, I.Miyazaki, E.Takimiya, K.

DNTT : Dinaphtho2,3-b:2',3'-f thiopheno

DNTT 2.9 cm2/Vs

Klauk, H.Gundlach, D.J.Nichols, J.A.Jackson, T.N., IEEEE Trans. Electron

Meng, H.Bendikov, M.Mitchell, G.Helgeson, R.Wudl, F.Bao, Z.Siegrist, T.

Horowitz, G.Fichou, D.Peng, X.Xu, Z.Garnier, F., Solid State Commum.

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2-8N,N'-dioctyl-3,4,9,10-perylene tetracarboxylic diimide

572500, 379646, 483036 n

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Aldrich 572500, 379646,

6,6-Phenyl C61 butyric acid methyl

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cm2/Vs TOFTime of Flight

Vs ESmE 10-2 cm2/Vs

C13 2.8 cm2/Vs

TOF SmH 0.1 cm2/

FET 0.14 cm2/Vs

3-9 0.5 cm2/Vs

Radiolysis Time-Resolved Microwave Conductivity

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FET 0.1 cm2/Vs P3RT

4-7 TOF FET

有機トランジスタの基礎材料科学の基礎 6

有機トランジスタの基礎材料科学の基礎 6