Array

Bulletin No
T07 EB0
(Mar.,2001)
CAUTION / WARNING
• The information in this publication has been carefully checked and is believed to be accurate;
however, no responsibility is assumed for inaccuracies.
• Sanken reserves the right to make changes without further notice to any products herein in the
interest of improvements in the performance, reliability, or manufacturability of its products.
Before placing an order, Sanken advises its customers to obtain the latest version of the relevant
information to verify that the information being relied upon is current.
• Application and operation examples described in this catalog are quoted for the sole purpose of
reference for the use of the products herein and Sanken can assume no responsibility for any
infringement of industrial property rights, intellectual property rights or any other rights of Sanken
or any third party which may result from its use.
• When using the products herein, the applicability and suitability of such products for the intended
purpose or object shall be reviewed at the users’ responsibility.
• Although Sanken undertakes to enhance the quality and reliability of its products, the occurrence
of failure and defect of semiconductor products at a certain rate is inevitable. Users of Sanken
products are requested to take, at their own risk, preventative measures including safety design
of the equipment or systems against any possible injury, death, fires or damages to the society
due to device failure or malfunction.
• Sanken products listed in this catalog are designed and intended for the use as components in
general purpose electronic equipment or apparatus (home appliances, office equipment, tel-
ecommunication equipment, measuring equipment, etc.). Before placing an order, the user’s
written consent to the specifications is requested.
When considering the use of Sanken products in the applications where higher reliability is
required (transportation equipment and its control systems, traffic signal control systems or
equipment, fire/crime alarm systems, various safety devices, etc.), please contact your nearest
Sanken sales representative to discuss and obtain written confirmation of your specifications.
The use of Sanken products without the written consent of Sanken in the applications where
extremely high reliability is required (aerospace equipment, nuclear power control systems, life
support systems, etc.) is strictly prohibited.
• Anti radioactive ray design is not considered for the products listed herein.
• This publication shall not be reproduced in whole or in part without prior written approval from
Sanken.
Ordering
Specify the number of standard minimum packaged units when placing an order.
Standard minimum packaged unit
Package Type
Series
Cardboard Box Stick Reel
SLA 50 108
SMA 120 108

STA300 100
STA400 80
STA500 110
SDK 1200
Contents
Product index by Part Number .................................................... 2
Product index by function (Sink Driver) ......................................... 4
Product index by function (Source Driver)...................................... 6
Product index by function (Motor Driver) ....................................... 8
Product index by applications.................................................. 10
Storage, characteristic inspection, and handling precautions ........... 13
Avalanche energy capability of MOSFET array .............................. 14
Transistor array with built-in avalanche diode .............................. 16
Switching time measurement .................................................. 16
External dimensions ............................................................. 17
SLA packages ..................................................................... 18
SMA packages ................................................................... 122
STA packages .................................................................... 152
SD packages (surface mount) ................................................. 191
1
Product index by Part Number
Part Number Classification Number of chips VCEO • VDSS (V) IC • ID (A) hFE (min) RDS (ON) max (Ω) Package Page
SDA01 Source driver 4 –60 –1.5 2000 SMD 16-pin 191
SDA05 3–phase motor driver 3 –60 –4 2000 SMD 16-pin 192
SDC01 Sink driver 4 50 2 1000 SMD 16-pin 193
SDC03 Sink driver 4 60±10 1.5 2000 SMD 16-pin 194
SDC04 Sink driver 4 100±15 1.5 2000 SMD 16-pin 195
SDC06 Sink driver 4 30 to 45 2 400 SMD 16-pin 196
SDC07 3–phase motor driver 3 60 4 2000 SMD 16-pin 197
SDH02 Sink driver 4 100 1.5 2000 SMD 16-pin 198
SDH03 H–bridge driver 4 +100/–60 ±1.5 2000 SMD 16-pin 200
SDK02 Sink driver 4 60 2 0.24 SMD 16-pin 202
SDK04 Sink driver 4 100 2 0.8 SMD 16-pin 203
SLA4010 Sink driver 4 60±10 4 2000 SIP 12-pin with fin 18
SLA4030 Sink driver 4 100 4 2000 SIP 12-pin with fin 19
SLA4070 Source driver 4 –100 –5 1000 SIP 12-pin with fin 24
SLA4071 Source driver 4 –100 –5 2000 SIP 12-pin with fin 25
SLA4310 H–bridge driver 4 ±60 ±4 80 SIP 12-pin with fin 26
SLA5001 Sink driver 4 100 5 0.3 SIP 12-pin with fin 34
SLA5004 Source driver 4 –60 –5 0.3 SIP 12-pin with fin 37
SLA5007 H–bridge driver 4 ±60 +5/–4 0.22/0.55 SIP 12-pin with fin 40
SLA5009 3–phase motor driver 6 ±60 +5/–4 0.22/0.55 SIP 12-pin with fin 44
SLA5013 H–bridge driver 4 ±100 ±5 0.3/0.7 SIP 12-pin with fin 50
SLA5022 3–phase motor driver 6 ±60 ±6 2000 0.22 SIP 12-pin with fin 60
SLA5023 3–phase motor driver 6 ±100 ±6 2000 0.55 SIP 12-pin with fin 62
SLA5054 Sink driver 6 150 ±7/±5/±7 0.105/0.44/0.2 SIP 15-pin with fin 76
SLA5055 Sink driver 5 150 ±5/±7 0.44/0.2 SIP 12-pin with fin 78
SLA5058 Sink driver 5 150 ±7 0.2 SIP 12-pin with fin 81
SLA5059 3–phase motor driver 6 60 ±4 0.55 SIP 12-pin with fin 82
SLA5065 5–phase motor driver 4 60 7 0.1 SIP 15-pin with fin 90
SLA5077 Sink driver 4 150 ±10 0.2 SIP 12-pin with fin 98
SLA5079 3–phase motor driver 3 –60 –10 0.14 SIP 12-pin with fin 99
2
Part Number Classification Number of chips VCEO • VDSS (V) IC • ID (A) hFE (min) RDS (ON) max (Ω) Package Page
SLA6012 3–phase motor driver 6 ±60 ±4 2000 SIP 12-pin with fin 108
SLA8001 H–bridge 4 ±60 ±12 50 SIP 12-pin with fin 120
SMA4020 Source driver 4 –60 –4 2000 SIP 12-pin 122
SMA4021 Source driver 4 –60 –3 2000 SIP 12-pin 123
SMA4030 Sink driver 4 100 3 2000 SIP 12-pin 124
SMA5101 Sink driver 4 100 4 0.6 SIP 12-pin 127
SMA5103 H–bridge driver 4 ±60 +5/–4 0.22/0.55 SIP 12-pin 130
SMA5104 3–phase motor driver 6 ±60 +5/–4 0.22/0.55 SIP 12-pin 132
SMA5112 3–phase motor driver 6 250 7 0.5 SIP 12-pin 136
SMA5117 3–phase motor driver 6 250 7 0.25 SIP 12-pin 138
SMA5118 3–phase motor driver 6 500 ±5 1.4 SIP 12-pin 139
SMA5125 3–phase motor driver 6 ±60 ±10 0.14 SIP 12-pin 140
SMA5127 3–phase motor driver 6 ±60 ±4 0.55 SIP 12-pin 142
SMA6010 3–phase motor driver 6 ±60 ±4 2000 SIP 12-pin 144
SMA6014 3–phase motor driver 6 ±60 ±2 1500/2000 SIP 12-pin 146
Stepper motor driverr with
SMA6511 5 100±15/–60 1.5/–3 2000 SIP 12-pin 148
Dual Supply Voltage Switch
Stepper motor driverr with
SMA6512 5 60±10/–60 1.5/–3 2000 SIP 12-pin 150
Dual Supply Voltage Switch
STA301A Sink driver 3 60±10 4 1000 SIP 8-pin 152
STA302A Source driver 3 –50 –4 1000 SIP 8-pin 153
STA302A 3–phase motor driver 3 –50 –4 1000 SIP 8-pin 153
STA303A Sink driver 3 100 4 1000 SIP 8-pin 154
STA303A 3–phase motor driver 3 100 4 1000 SIP 8-pin 154
STA304A 3–phase motor driver 3 550 1 200 SIP 8-pin 155
STA305A 3–phase motor driver 3 –550 –1 200 SIP 8-pin 156
STA431A H–bridge driver 4 ±60 ±3 40 SIP 10-pin 170
STA434A H–bridge driver 4 ±60 ±4 1000 SIP 10-pin 172
STA457C H–bridge driver 4 ±60 ±4 2000 SIP 10-pin 176
STA458C H–bridge driver 4 ±30 ±5 40 SIP 10-pin 178
STA460C Sink driver 2 60±10 6 700 SIP 10-pin 180
STA501A Sink driver 4 60 5 0.2 SIP 10-pin 187
3
Product index by function Sink driver
●With built-in avalanche diode between collector and base
Part Number Number of chips VCEO (V) IC (A) hFE (min) RDS (ON) max (Ω) Equivalent circuit Package Page
STA460C 2 60±10 6 700 1 SIP 10-pin 180
STA371A 3 60±10 2 2000 2 SIP 8-pin 160
STA301A 3 60±10 4 1000 2 SIP 8-pin 152
SDC06 4 30 to 45 2 400 3 SMD 16-pin 196
STA413A 4 35±5 3 500 4 SIP 10-pin 168
STA481A 4 60±10 1 2000 5 SIP 10-pin 185
SDC03 4 60±10 1.5 2000 6 SMD 16-pin 194
STA471A 4 60±10 2 2000 5 SIP 10-pin 181
STA401A 4 60±10 4 1000 5 SIP 10-pin 161
SLA4010 4 60±10 4 2000 6 SIP 12-pin with fin 18
STA406A 4 60±10 6 2000 5 SIP 10-pin 165
STA435A 4 65±15 4 1000 7 SIP 10-pin 174
STA485A 4 100±15 1 2000 5 SIP 10-pin 186
SDC04 4 100±15 1.5 2000 6 SMD 16-pin 195
STA475A 4 100±15 2 2000 5 SIP 10-pin 184
●With built-in flywheel diode

Part Number Number of chips VCEO • VDSS (V) IC • ID (A) hFE (min) RDS (ON) max (Ω) Equivalent circuit Package Page
SDK02 4 60 2 0.24 8 SMD 16-pin 202
SMA5114 4 60 3 0.25 9 SIP 12-pin 137
SLA5031 4 60 5 0.3 10 SIP 12-pin with fin 66
SDH02 4 100 1.5 2000 11 SMD 16-pin 198
SMA4033 4 100 2 2000 12 SIP 12-pin 126
SMA4032 4 100 3 2000 12 SIP 12-pin 125
SMA5102 4 100 4 0.6 10 SIP 12-pin 128
SMA5106 4 100 4 0.55 10 SIP 12-pin 135
SMA5105 4 100 5 0.3 10 SIP 12-pin 134
SLA4031 4 120 4 2000 12 SIP 12-pin with fin 20
●General purpose
STA312A 3 60 3 300 13 SIP 8-pin 158
STA303A 3 100 4 100 14 SIP 8-pin 154
SDC01 4 50 2 1000 15 SMD 16-pin 193
STA412A 4 60 3 300 16 SIP 10-pin 167
STA504A 4 60 4 0.45 17 SIP 10-pin 188
STA501A 4 60 5 0.2 18 SIP 10-pin 187
STA473A 4 100 2 2000 19 SIP 10-pin 183
STA506A 4 100 2 0.8 18 SIP 10-pin 190
SDK04 4 100 2 0.8 20 SMD 16-pin 203
SMA4030 4 100 3 2000 21 SIP 12-pin 124
STA505A 4 100 3 0.6 18 SIP 10-pin 189
STA403A 4 100 4 1000 19 SIP 10-pin 163
SMA5101 4 100 4 0.6 20 SIP 12-pin 127
STA404A 4 200 3 1000 19 SIP 10-pin 164
SLA5055 5 150 ±5/±7 0.44/0.2 22 SIP 12-pin with fin 78
SLA5058 5 150 ±7 0.2 22 SIP 12-pin with fin 81
SLA5054 6 150 ±7/±5/±7 0.105/0.44/0.2 23 SIP 15-pin with fin 76
4
●Equivalent circuit (Sink driver)
1 9 G
2 3 4 9 10 11
1 5 8 12
6 7
2 0 H
3 A I
4 B J
5 C K
6 D L
7 E M
8 F
5
Product index by function Source driver
●With built-in flywheel diode
SMA4021 4 –60 –3 2000 1 SIP 12-pin 123
SLA4071 4 –100 –5 2000 1 SIP 12-pin with fin 25
SLA5006 4 –100 –5 0.7 2 SIP 12-pin with fin 39
●General purpose
STA322A 3 –50 –3 100 3 SIP 8-pin 159
STA302A 3 –50 –4 1000 4 SIP 8-pin 153
STA308A 3 –120 –4 2000 4 SIP 8-pin 157
STA402A 4 –50 –4 1000 5 SIP 10-pin 162
SDA01 4 –60 –1.5 2000 6 SMD 16-pin 191
STA472A 4 –60 –2 2000 5 SIP 10-pin 182
STA421A 4 –60 –3 40 7 SIP 10-pin 169
SMA4020 4 –60 –4 2000 6 SIP 12-pin 122
SLA4070 4 –100 –5 1000 6 SIP 12-pin with fin 24
STA408A 4 –120 –4 2000 9 SIP 10-Pin 166
6
●Equivalent circuit (Source driver)
1 6
2 7
3 8
4 9
5 0
7
Product index by function Motor driver
●H-bridge driver
STA458C 4 ±30 ±5 40 1 SIP 10-pin 178
STA431A 4 ±60 ±3 40 2 SIP 10-pin 170
STA434A 4 ±60 ±4 1000 3 SIP 10Pin 172
STA457C 4 ±60 ±4 2000 4 SIP 10-pin 176
SLA4310 4 ±60 ±4 80 5 SIP 12-pin with fin 26
SLA5007 4 ±60 +5/–4 0.22/0.55 6 SIP 12-pin with fin 40
SMA5103 4 ±60 +5/–4 0.22/0.55 6 SIP 12-pin 130
SDH03 4 ±100/–60 ±1.5 2000 7 SMD 16-pin 200
SLA5013 4 ±100 ±5 0.3/0.7 6 SIP 12-pin with fin 50
●3-phase motor driver

SDC07 3 60 4 2000 9 SMD 16-pin 197
STA303A 3 100 4 1000 11 SIP 8-pin 154
STA304A 3 550 1 200 12 SIP 8-pin 155
STA302A 3 –50 –4 1000 13 SIP 8-pin 153
SDA05 3 –60 –4 2000 14 SMD 16-pin 192
STA305A 3 –550 –1 200 16 SIP 8-pin 156
SMA6014 6 ±60 ±2 1500/2000 19 SIP 12-pin 146
SMA6010 6 ±60 ±4 2000 20 SIP 12-pin 144
SMA5127 6 ±60 ±4 0.55 21 SIP 12-pin 142
SMA5104 6 ±60 +5/–4 0.22/0.55 21 SIP 12-pin 132
SLA5022 6 ±60 ±6 2000 0.22 22 SIP 12-pin with fin 60
SMA5125 6 ±60 ±10 0.14 18 SIP 12-pin 140
SLA5023 6 ±100 ±6 2000 0.55 22 SIP 12-pin with fin 62
SMA5112 6 250 7 0.5 24 SIP 12-pin 136
SMA5117 6 250 7 0.25 24 SIP 12-pin 138
SMA5118 6 500 ±5 1.4 24 SIP 12-pin 139
●Stepper motor driver with dual supply voltage switch

SMA6511 5 100±15/–60 1.5/–3 2000 25 SIP 12-pin 148
SMA6512 5 60±10/–60 1.5/–3 2000 25 SIP 12-pin 150
●5-phase motor driver

8
●Equivalent circuit (Motor driver)
1 0 J
A K
2
B L
3
C M
D N
E O
F P
7
G Q
8
H R
9 I
9
Product index by applications
Product type
Application Typical circuit example Transistor
MOSFET
Darlington Single
●Solenoid STA301A STA460C

STA371A STA413A
●Relay
STA401A SDC06
STA406A
STA435A
STA471A
STA475A
STA481A
STA485A
STA4010
SDC04
SDC03
SLA4031 SLA5002
SLA4041 SLA5003
SLA4060 SLA5031
SMA4032 SLA5040
SMA4033 SMA5102
SDH02 SMA5105
SMA5106
SMA5114
SDK02
SLA4071 SLA5006
SMA4021
STA302A STA322A SLA5004

STA308A STA421A SLA5005
STA402A SLA5024
STA408A
STA472A
SLA4070
SMA4020
SDA01
10
Product type
MOSFET
Darlington Single
●DC motor Forward-reverse STA434A STA431A

control STA457C STA458C
SLA4340 SLA4310
STA4390 SLA8001
SDH03
PWM control SLA4391 SLA5007

SLA5008
SLA5013
SLA5018
SMA5103
●3-phase DC STA302A+STA303A
brushless SMA6010
motor
SLA6020
SDA05+SDC07
100V AC direct drive SLA5072

200V AC direct drive SLA5075
SMA5112
SMA5117
SMA5118
200V AC direct drive STA304A+STA305A
SLA6012
PWM control
SLA6022
SLA6023
SLA6024
SLA6026
SMA6014
SLA5022
SLA5023
SLA5009
SLA5010
SLA5017
SLA5059
SLA5060
SLA5061
SLA5064
SLA5079+SLA5080
SMA5104
SMA5125
SMA5127
11
Product index by applications
Product type
MOSFET
Darlington Single
●Stepper Constant voltage STA401A STA460C
motor drive STA406A STA413A
STA435A SDC06
STA471A
STA475A
STA481A
STA485A
SLA4010
SDC04
SDC03
Dual supply voltage SMA6511
drive SMA6512
Bipolar drive STA473A STA421A STA506A

STA472A STA412A STA505A
STA408A SDC01 STA504A
STA404A STA501A
STA403A SMA5101
STA402A SLA5024
SMA4030 SLA5005
SMA4020 SLA5004
SLA4070 SLA5001
SLA4060
SLA4030
SDA01
Product type
Application Typical circuit example
N–CH P–CH
●5-phase SLA5011 SLA5012
motor SLA5029 SLA5015
SLA5065+SLA5068 SLA5086
SLA5073+SLA5074
SLA5085
Product type
Application Typical circuit example
100V 150V 200V 250V
●"S" shape SLA5021 SLA5047 SLA5041 SLA5044
correction SLA5037 SLA5052 SLA5046 SLA5049
switch SLA5042 SLA5054 SLA5057
SLA5055
SLA5058
SLA5070
SLA5077
SLA5081
SLA5088
12
Storage, characteristic inspection, and handling precautions
Inappropriate storage, characteristic inspection, or handling 5. Soldering temperature
may impair the reliability of the device. To ensure high reliabil-
If soldering is necessary, take care to keep the application of
ity, observe the following precautions:
heat as brief as possible, and within the following limits:
260±5°C for 10 s max
1. Storage precautions
350°C for 3 s max (soldering iron)
● It is recommended to store the device at room temperature
(between 5 and 35°C) and relative humidity of 40 to 75%. 6. Heatsink
Avoid storing the device in a place where the temperature or
A large contact area between the device and the heatsink for
humidity is high or changes greatly.
effective heat radiation is required. To ensure a large contact
● Store the device in a clean place that is not exposed to direct
area, minimize mounting holes and select a heatsink with a
sunlight, and is free from corrosive or harmful gases.
sufficiently smooth surface and that is free from burring or metal
● If the device is stored for a long time, check the solderability
debris.
and lead condition before using the device.
7. Handling precautions to protect power

2. Precautions on characteristic inspections
MOSFET arrays from static damage
When carrying out characteristic inspections on receiving
● When handling the device, physical grounding is necessary.
products or other occasions, take care to avoid applying a surge
Wear a wrist strap with a 1 MΩ resistor close to the body in
voltage from the measuring equipment and check the termi-
the wrist strap to prevent electric shock.
nals of the measuring equipment for a short circuit or wiring
● Use a conductive tablemat or floor mat at the device han-
errors. Measure the device within the range of its rated values.
dling workbench and to ensure grounding.
● When using a curve tracer or other measuring equipment,
3. Silicone Grease
ground the equipment as well.
When attaching a heatsink, apply a small amount of silicone ● When soldering, ground the bit of the soldering iron and the
evenly to the back of the device and both sides of the insulator dip tank to prevent a leakage voltage from damaging the
to reduce the thermal resistance between the device and device.
heatsink. ● Store the device in the shipping container or a conductive
Recommended silicone grease container or use aluminum foil to protect the device from
●G746 SHINETSU SILICONE CO., LTD. static electricity.
●YG6260 GE TOSHIBA SILICONE CO., LTD.
●SC102 DOW CORNING TORAY SILICONE CO., LTD.
Please select a silicone grease carefully since the oil in
some grease can penetrate the product, which will result
in an extremely short product life.
4. Screw tightening torque

If screws are not tightened with sufficient torque, this can in-
crease the thermal resistance and reduce the radiation effect.
Tightening screws with too great a torque damage the screw
thread, deform the heatsink, or twist the device frame until it is
damaged. Therefore, tighten screws with a torque between
0.588 and 0.784 N • m (6 to 8 kgf • cm).
13
Sanken MOSFETs feature guaranteed
Avalanche energy capability of MOSFET array avalanche energy capability.
1. What is avalanche energy capability ? 3. Temperature derating for EAS

When a MOSFET is used for high-speed switching, the in- The EAS value in the specifications is guaranteed when the
ductive load and wiring inductance may cause a counter elec- channel temperature Tch is 25°C. Since the EAS value drops as
tromotive voltage at cutoff that the device cannot withstand. the channel temperature rises, derating depending on the tem-
Avalanche energy capability is the non-clamped ability to with- perature is necessary.
stand damage expressed as energy. As long as the energy Fig. B shows the derating curve for single avalanche energy
applied to the device at cutoff is within the guaranteed ava- capability. This is the derating curve of EAS and the channel
lanche energy capability, the device will not be damaged even temperature (Tch (start)) immediately before the avalanche oc-
if the drain-source voltage exceeds the capability. curs in the product, with the EAS value (maximum rating) at
For example, a drain-source voltage that is within the guaran- 25°C as 100%.
teed capability when electrically stationary may exceed the limit For example, if the product temperature is 50°C, the EAS value
at startup or cutoff. Usually, a snubber circuit or similar surge is derated to 64% of the value at 25°C.
absorbing circuit is used to keep the drain-source voltage within
the guaranteed capability. Sanken MOSFETs, however, do not
Fig. B
require this kind of protective circuit because the avalanche EAS – Tch (start)
energy capability is guaranteed. Sanken MOSFETs enable ILp = ID max
100
the number of parts to be reduced, saving board area.
80
EAS(normalized) (%)
* Consult the engineering department of Sanken when plan-
60
ning to use MOSFETs in avalanche mode.
40
2. EAS calculation method
20
If the current in an inductive load L is ILP at the moment when
the MOSFET is cut off, EAS can be expressed as follows: 0
25 50 75 100 125 150
VDSS
EAS = 1 • L • ILP2 • .......................................1 Tch (start) (°C)
2 VDSS – VDD
*VDD : Supply voltage

4. Continuous avalanche energy capability
If the value of L is not known in an actual circuit, EAS can This section explains the derating method for continuous ava-
also be calculated from the actual voltage and current wave- lanche.
forms as follows: Considering continuous avalanche as the repetition of a single
avalanche, the safe operating area (SOA) is determined using
EAS = PS • t .....................................................................2 the derating curve shown in Fig. B.
*PS : Surge power *t : Surge time Calculate the energy and Tch (start) of avalanche in the worst
condition and determine SOA using the calculated data and
The following calculation is used to determine EAS where the the derating curve shown in Fig. B. The temperature rise due
voltage and current shown in Fig. A are applied to the MOSFET to avalanche should not cause the channel temperature to ex-
in a circuit ceed the maximum rating.
Integrate the overlapping section of ID and VDS to calculate The following is an example of determining SOA judgment by
∫ID • VDS • dt. When the ID waveform is triangular, EAS will be as calculation when a MOSFET enters a transient avalanche state
follows: at power-on then changes to a stationary state
1 Supposing that the waveform is as shown in Fig. C until the
EAS = • 10(A) • 550(V) • 10(µs) = 27.5(mJ)
2 MOSFET changes to the stationary state, calculate the start
loss and switching (turn-on/off) loss. To simplify the calcula-
tion, the average loss Pa and the last two waveforms are used
10A
Fig. A for approximation. (Fig. D)
550V
(VDSS) First, calculate the channel temperature Tch (τ) at time (τ)
ID where the temperature condition is severest.
0
If the Tch (τ) value is within the maximum rating, there is no
550V problem as far as the temperature is concerned.
(VDSS)
VDS
0
10 µ s
14
Tch(τ) = Ta + Pa • rch–c (Tn + T + t1 + t2 + t3) 5. Avalanche energy capability measuring method
+ (P1 – Pa) • rch–c (T + t1 + t2 + t3)
– (P1 – P2) • rch–c (T + t2 + t3) Fig. E
+ (P3 – P2) • rch–c (T + t3)
L
– P3 • rch–c (T) + P4 • rch–c (t4 + t5 + t6)
IL
– (P4 – P5) • rch–c (t5 + t6)
VDS
+ (P6 – P5) • rch–c (t6)................................................3 RG VDD
VGS
*Ta : Ambient temperature
0V
*rch-c (t) : Transient thermal resistance at pulse width t
(a) Measuring circuit
Then calculate the channel temperature Tch (τl) immediately
before avalanche.
Tch(τ) = Ta + Pa • rch–c (Tn + T’ + t1 + t2 + t3) V(BR)DSS
EAS = 1 • L • ILp2 • V(BR)DSS – VDD
2
+ (P1 – Pa) • rch–c (T’ + t1 + t2 + t3)
– (P1 – P2) • rch–c (T’ + t2 + t3) V(BR)DSS
ILp
+ (P3 – P2) • rch–c (T’ + t3) IL
VDS
– P3 • rch–c (T’) + P4 • rch–c (t4 + t5 + t6)
– (P4 – P5) • rch–c (t5 + t6) VDD
+ (P6 – P5) • rch–c (t6)................................................4
(b) Output waveform
This Tch (τ) value becomes Tch (start). If the avalanche energy
(EAS = P6 • t6) is within the value derated from the guaranteed
EAS value at the temperature, there is no problem as far as the
avalanche energy is concerned.
Fig. C Transient Stationary
VDS
ID
T(n)
Avalanche in this section
Fig. D
P3 P6
P1 P4
Pa P2 P5
0
T(n) t1 t2 t3 t4 t5 t6
T
T'
τ1 τ
15
SLA4010, STA301A, 371A, 401A, 406A, 413A, 435A,
Transistor array with built-in avalanche diode 460C, 471A, 475A, 481A, 485A, SDC03, 04, 0 6
The Darlington transistor chip with a built-in avalanche diode

is a planar type monolithic Darlington transistor chip having
the equivalent circuit shown in the figure on the right. Surge
Voltage can be absorbed by the avalanche diode provided be-
tween the collector and the base. This eliminated the need for
extra components for absorbing surge caused by counter elec-
tromotive force produced by inductive load switch circuits. These
Darlington transistor arrays are ideal for relay drive, solenoid
drive, and printer wire drive applications.
Switching time measurement
1. Transistor array 2. MOS FET array
Fig. 1 PNP Fig. 3 Nch

(a) Measuring circuit (a) Measuring circuit
+VBB2 RL
ID
0 IC –VCC
20 µ s R2
VDS
VDD
VGS
IB2
D.U.T RG
50 µ s IB1 0V
0
R1
P.W.=10 µ s
–VBB1 Duty cycle≤1%
RL
GND 0
(b) Input-output waveform

90%
VGS
IB2
Base 0 10%
current 0
IB1
90%
Collector
current 0.1IC 0 VDS
IC
10%
0.9IC
td(on) tr td(off) tr
ton toff
ton tstg tf
Fig. 2 NPN Fig. 4 Pch

(a) Measuring circuit (a) Measuring circuit
+VBB1 RL
ID
0 IC VCC
50 µ s R1 VDS
VDD
IB1 0V
D.U.T RG
IB2
VGS
0 R2
P.W.=10 µ s
20 µ s
Duty cycle≤1%
–VBB2 RL
GND 0
(b) Input-output waveform 10%
VGS
IB2
Base 0
current 0 90%
IB1
Collector 0.9IC 10%

current 0
VDS
IC
0.1IC
90%
td(on) tr td(off) tr
ton toff
ton tstg tf
16
External dimensions (unit: mm)
A SLA (12-pin) C STA (8-pin)

20.4 max
31.5max
31.0±0.2
φ 3.2±0.15 Ellipse3.2±0.15 × 3.8 4.8±0.2
24.4±0.2 1.7±0.1
2.5 max
11.3±0.2
9.0±0.2
16.0±0.2
13.0±0.2
4.7±0.5
b
1.0±0.25
9.5min
0.5±0.15 (2.54)
2.7
Pin1 12
7 × P2.54=17.78
+0.2
0.5±0.15
0.85–0.1
1.2±0.2
+0.2
1.2±0.15 1.45±0.15 0.55–0.1 2.2±0.7 C1.5±0.5
11 × P2.54±0.7 = 27.94±1.0
4.0±0.2
a. Part No.
b. Lot No.
1 2 3 4 5 6 7 8
Weight : Approx. 6.0g Pin No.
Weight : Approx. 2.0g
SLA (15-pin) STA (10-pin)

31.3±0.2
25.25±0.2
φ 3.2±0.15 31.0±0.2 φ 3.2±0.15× 3.8
4.8±0.2
24.4±0.2
1.7±0.1
16.4±0.2 b
9.0±0.2
11.3±0.2
2.3±0.2
a
16.0±0.2
13.0±0.2
4.7±0.5
9.9±0.2
2.45±0.2
(2.54)
1.0±0.25 0.5±0.15
(3.0) 6.7±0.5
9.7–0.5
+1.0
9 × 2.54 = 22.86±0.25
R-End
0.5±0.15
1.2±0.2
4.0±0.2
+0.2
0.65–0.1
+0.2 +0.2
1.15–0.1 0.55–0.1 C1.5±0.5
14 × P2.03±0.7=28.42±1.0 4.0±0.7
1 2 3 4 5 6 7 8 9 10
a. Part No.
b. Lot No.
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

B SMA D SD
0.89±0.15 2.54±0.25
+0.15
4.0±0.2 0.75–0.05
9
31.0±0.2 16
2.5±0.2
6.8max
b
b
10.2±0.2
a
1 20.0max 8
2.4
8.0±0.5
6.3±0.2 19.56±0.2
(10.4)
0.3–0.05
+0.15
4.0max
1.46±0.15
0.25
+0.2
2.54 0.85–0.1 0~0.1
3.6±0.2
1.4±0.2
+0.2
0.55–0.1 1.2±0.1
27.94 1.0±0.3 3.0±0.2 a. Part No.
9.8±0.3 b. Lot No.
a. Part No.
b. Lot No.
Weight : Approx. 4.0g Weight : Approx. 1.05g
17
SLA4010
NPN Darlington
With built-in avalanche diode External dimensions A ••• SLA (12-pin)
Absolute maximum ratings (Ta=25°C) Electrical characteristics (Ta=25°C)

Specification
Symbol Ratings Unit Symbol min typ max unit Conditions
VCBO 60±10 V ICBO 10 µA VCB=50V

VCEO 60±10 V IEBO 10 mA VEB=6V
VEBO 6 V VCEO 50 60 70 V IC=10mA
IC 4 A hFE 2000 VCE=4V, IC=3A
ICP 6 (PW≤10ms, Du≤50%) A VCE(sat) 1.5 V IC=3A, IB=10mA
IB 0.5 A
5 (Ta=25°C)
PT W
40 (Tc=25°C)
Tj 150 °C
Tstg –40 to +150 °C
■Equivalent circuit diagram
3 6 7 10
4 8 11
1
R1 R2
2 5 9 12
R1: 3kΩ typ R2: 150Ω typ
Characteristic curves
IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) hFE-IC Temperature Characteristics (Typical)
(VCE=4V) (VCE=4V)
5 20000 20000
m A
2.0
IB= 10000 10000
4 1.0mA typ
0.8mA
5000
5000
°C
25
=1
0.6mA Ta
3 °C
0.5mA 25
IC (A)
0°
C
hFE
–3
hFE
1000
0.4mA 1000
2
500
500
1
0.3mA
100
100
0 50 50
0 1 2 3 4 0.05 0.1 0.5 1 4 0.05 0.1 0.5 1 4
VCE (V) IC (A) IC (A)
VCE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)
(IC / IB=1000) 3
(VCE=–4V)
2 4
3
2
VCE (sat) (V)
VCE (sat) (V)
IC (A)
1 Ta=–30°C IC=4A 2
25°C IC=3A
IC=2A
125°C 1
°C
IC=1A 1
–30°C
125
75°C
25°C
Ta=
0 0
0
0.1 0.5 1 4 0.2 0.5 1 5 10 50 100 0 1 2
IC (A) IB (mA) VBE (V)
θ j-a-PW Characteristics PT-Ta Characteristics Safe Operating Area (SOA)

20 40
10
With Silicone Grease
1m
Natural Cooling
10
s
ms
Heatsink: Aluminum 5
10 in mm
10
0m
30
s
D.
W
C.
ith
TC
=2
Inf
θ j–a (°C / W)
5°
5
init
C
eH
PT (W)
1
ea
IC (A)
20
tsin
k
0.5
10
0×
10
10 0×
50 × 2
50× Single Pulse
1.0 2m m
Without Heatsink 0.1 Without Heatsink
Ta=25°C
0.5 0 0.05
1 5 10 50 100 500 1000 –40 0 50 100 150 3 5 10 50 100
PW (mS) Ta (°C) VCE (V)
18
SLA4030
NPN Darlington
General purpose External dimensions A ••• SLA (12-pin)

Specification
Symbol Ratings Unit Symbol min typ max Unit Conditions
VCBO 120 V ICBO 10 µA VCB=120V

VCEO 100 V IEBO 10 mA VEB=6V
VEBO 6 V VCEO 100 V IC=10mA
IB 0.5 A
5 (Ta=25°C)
PT W
25 (Tc=25°C)
VISO 1000 (Between fin and lead pin, AC) Vrms
Tj 150 °C
Tstg –40 to +150 °C
θ j-c 5 °C/W

2 4 9 11
5 8 12
1
R1 R2
3 6 7 10
(VCE=2V) (VCE=2V)
4 20000 20000
0.8mA
mA
IB =1 10000 10000
0.6mA typ
5000 5000
0.5mA
3
°C
0.4mA 25
=1 °C
Ta 75 °C
25 C
IC (A)
1000
0°
1000
hFE
hFE
2 –3
500 500
0.3mA
1 100 100
50 50
0 20 20
0 1 2 3 4 5 6 0.02 0.05 0.1 0.5 1 4 0.02 0.05 0.1 0.5 1 4
(IC / IB=500) (VCE=2V)
3 3 4
25°C
3
75°C
25°C
2 2
VCE (sat) (V)
T a= 1
VCE (sat) (V)
IC (A)
IC=4A
2
0°
C
–3 IC=2A
1 1
IC=1A
1
°C
125
–30°C
75°C
25°C
Ta=
0 0 0
0.3 0.5 1 5 0.1 0.5 1 5 10 50 0 1 2 3

20 25 10
10
Natural Cooling
5
0µ
Heatsink: Aluminum
s
10 20 in mm
1m
s
10
W
ms
ith
θ j–a (°C / W)
Inf
5
15 1
init
PT (W)
eH
IC (A)
10
ea
0× 0.5
tsin
10
0×
k
10 2
50
×50
×2
Without Heatsink
1 5 0.1
Single Pulse
0.05 Without Heatsink
0 Ta=25°C
0.5 0.03
1 5 10 50 100 500 1000 –40 0 50 100 150 3 5 10 50 100 200
19
SLA4031 NPN Darlington
With built-in flywheel diode External dimensions A ••• SLA (12-pin)

Specification
IC 4 A hFE 2000 5000 15000 VCE=2V, IC=2A
ICP 6 (PW≤1ms, Du≤50%) A VCE (sat) 1.0 1.5 V
IC=2A, IB=2mA
IB 0.5 A VBE (sat) 1.6 2.0 V
IF 4 (PW≤0.5ms, Du≤25%) A ton 0.6 µs VCC 40V,
IFSM 6 (PW≤10ms, Single) A tstg 5.0 µs IC=2A,
VR 120 V tf 2.0 µs IB1=–IB2=10mA
5 (Ta=25°C) ●Diode for flyback voltage absorption
PT W (Ta=25°C)
25 (Tc=25°C) Specification
VISO 1000 (Between fin and lead pin, AC) Vrms Symbol min typ max Unit Conditions
Tj 150 °C VR 120 V IR=10µA
Tstg –40 to +150 °C VF 1.2 V IF=1A
θ j-c 5 °C/W IR 10 µA VR=120V
trr 100 ns IF=±100mA
2 3 4 9 10 11
1 5 8 12
R1 R2
6 7 R1: 3kΩ typ R2: 500Ω typ
(VCE=2V) (VCE=2V)
4 20000 20000
A
0.8m
A 10000 10000
1m 0.6mA
IB= typ
5000 5000
0.5mA
3
°C
0.4mA 25
=1 °C
Ta 75 °C
IC (A)
1000 1000 25 C
0°
hFE
hFE
2 –3
500 500
0.3mA
1 100 100
50 50
0 20 20
0 1 2 3 4 5 0.02 0.05 0.1 0.5 1 4 0.02 0.05 0.1 0.5 1 4
(IC / IB=500) (VCE=2V)
3 3 4
3
25°C
75°C
25°C
2 2
VCE (sat) (V)
VCE (sat) (V)

Ta=1
IC (A)
IC=4A
2
0°
C
IC=2A
–3
1 1 IC=1A
1
75°C C
°
125
–30°C
25°C
Ta=
0 0 0
0.3 0.5 1 5 0.1 0.5 1 5 10 50 0 1 2 3

20 25 10
Natural Cooling
5
10
Heatsink: Aluminum
0
10
µs
20 in mm
1m
s
θ j–a (°C / W)
10
W
ms
ith
5
15
Inf
1
PT (W)
init
IC (A)
eH
10 0.5
ea
0×
tsin
10 10
0×
k
2
50×
50×
2
Without Heatsink
1 5 0.1
Single Pulse
0 Ta=25°C
0.5 0.03
1 5 10 50 100 500 1000 –40 0 50 100 150 3 5 10 50 100 200
20
SLA4041
NPN Darlington

Specification
IC 3 A hFE 1000 6000 15000 VCE=4V, IC=1.5A
ICP 6 (PW≤10ms, Du≤50%) A VCE(sat) 1.1 1.5 V
IC=1.5A, IB=3mA
IB 0.2 A VBE(sat) 1.7 2.0 V
IF 3 (PW≤0.5ms, Du≤25%) A VFEC 1.5 V IFEC=2.0A
IFSM 6 (PW≤10ms, single) A ●Diode for flyback voltage absorption (Ta=25°C)
VR 200 V Specification
5 (Ta=25°C) Symbol min typ max Unit Conditions
PT W
25 (Tc=25°C) VR 200 V IR=10µA
Tj 150 °C VF 1.6 V IF=1A
Tstg –40 to +150 °C IR 10 µA VR=200V
2 3 4 9 10 11
1 5 8 12
R1 R2
6 7
(VCE=4V) (VCE=4V)
6 5000 5000
mA
100
A
5
00m
IB=2
A
30m
4 1000 1000
A °C
25
10m
=1
°C
Ta
IC (A)
75
500 500 °C
hFE
hFE
3 3mA 25
0°
C
–3
2 1mA
100 100
1
50 50
0 30 30
0 1 2 3 4 5 6 0.03 0.05 0.1 0.5 1 56 0.03 0.05 0.1 0.5 56
(IC / IB=100) 3
(VCE=4V)
3 6
5
°C
75°C
25°C
Ta=125
–30°C
2 2 4
VCE (sat) (V)
VCE (sat) (V)
IC (A)
3
IC=3A
1 IC=1.5A 2
1
C
IC=1A
5°
12
7 5 Ta=
1
°C
°C
°C
25
–30
0 0 0
0.2 0.5 1 5 6 0.5 1 5 10 50 100 200 0 1 2 3

20 25 10
Natural Cooling
5
10
Heatsink: Aluminum
0µ
1m
10 20 in mm
S
10
S
m
S
W
ith
Inf
θ j–a (°C / W)
5
init
15 1
PT (W)
eH
IC (A)
ea
10
tsin
0× 0.5
10
k
0×
10 2
50
×50
×2
Without Heatsink
1 5 0.1
Single Pulse
0.5 0 0.03 Ta=25°C

1 5 10 50 100 500 1000 –40 0 50 100 150 5 10 50 100 200
21
SLA4060
NPN Darlington

Specification

IC 5 A hFE 2000 5000 15000 VCE=2V, IC=3A
IC=3A, IB=3mA
IB 0.5 A VBE(sat) 1.6 2.0 V
5 (Ta=25°C) ton 0.5 µs VCC 30V,
PT W
25 (Tc=25°C) tstg 5.5 µs IC=3A,
VISO 1000 (Between fin and lead pin, AC) Vrms tf 1.5 µs IB1=–IB2=3mA
Tj 150 °C
Tstg –40 to +150 °C
θ j-c 5 °C/W

2 4 9 11
5 8 12
1
R1 R2
3 6 7 10
R1: 2.5kΩ typ R2: 200Ω typ
5
1mA 0.8mA 0.7mA 0.6mA (VCE=2V) (VCE=2V)
20000 20000
IB=2mA
A 10000 10000
0.5m typ
4 5000 5000
A
0.4m
3
1000 1000 °C
IC (A)
25
=1 C
Ta 75° C
hFE
hFE
500 500 °
25 °C
2 0
–3
1 100 100
50 50
0 20 20
0 1 2 3 4 5 0.02 0.05 0.1 0.5 1 5 0.02 0.05 0.1 0.5 1 5
(IC / IB=1000) (VCE=2V)
2 3 5
2
VCE (sat) (V)
VCE (sat) (V)
3
IC (A)
1 Ta=–30°C
IC=5A
25°C IC=3A 2
75°C 1
°C
75°C
125°C IC=1A
25°C
125
–30°C
Ta=
0 0 0
0.5 1 5 0.2 0.5 1 5 10 50 0 1 2 3

20 25 10
Natural Cooling
5
100
Heatsink: Aluminum
10
µs
20 in mm
1m
W
s
ith
10
Inf
ms
θ j–a (°C / W)
init
5 15 1
PT (W)
eH
IC (A)
10
ea
0×
tsin
10 0.5
0×
k
10 2
50
×50
×2
Without Heatsink
5 0.1
1
Single Pulse
Ta=25°C
0.5 0 0.03
1 5 10 50 100 500 1000 –40 0 50 100 150 3 5 10 50 100 200
22
SLA4061 NPN Darlington

Specification
IC 5 A hFE 2000 5000 15000 VCE=2V, IC=3A
IC=3A, IB=3mA
IB 0.5 A VBE(sat) 1.6 2.0 V
IFSM 8 (PW≤10ms, single) A tstg 5.5 µs IC=3A,
5 (Ta=25°C) ●Diode for flyback voltage absorption
PT W (Ta=25°C)
25 (Tc=25°C) Specification
VISO 1000 (Between fin and lead pin, AC) Vrms Symbol min typ max Unit Conditions
Tj 150 °C VR 120 V IR=10µA
Tstg –40 to +150 °C VF 1.2 V IF=1A
θ j-c 5 °C/W IR 10 µA VR=120V
■Equivalent circuit diagram trr 100 ns IF=±100mA
2 3 4 9 10 11
1 5 8 12
R1 R2
6 7 R1: 2.5kΩ typ R2: 200Ω typ
5
1mA 0.8mA 0.7mA 0.6mA (VCE=2V) (VCE=2V)
20000 20000
mA
0.5mA
10000 10000
I B= 2
typ
4 5000 5000
0.4mA
3
1000 1000 °C
25
IC (A)
=1
hFE
Ta °C
hFE
500 500 5
7 C
°
2 25
0°
C
–3
1 100 100
50 50
0 20 20
0 1 2 3 4 5 0.02 0.05 0.1 0.5 1 5 0.02 0.05 0.1 0.5 1 5
(IC / IB=1000) (VCE=2V)
2 3 5
2
VCE (sat) (V)
VCE (sat) (V)
3
IC (A)
1 Ta=–30°C IC=5A
°C
75°C
25°C
125
2
–30°C
25°C
IC=3A
Ta=
75°C
1
125°C IC=1A
0 0
0
0.5 1 5 0.2 0.5 1 5 10 50 0 1 2 3

20 25 10
Natural Cooling
100
Heatsink: Aluminum 5
µs
10 in mm
20
1m
W
s
10
ith
ms
Inf
θ j–a (°C / W)
5
init
15 1
PT (W)
eH
IC (A)
ea
10
0×
tsin
10 0.5
k
0×
10 2
50
×50
×2
Without Heatsink
5 0.1
1
Single Pulse
0.5 0 0.03 Ta=25°C
1 5 10 50 100 500 1000 –40 0 50 100 150 3 5 10 50 100 200
23
SLA4070
PNP Darlington

Specification
VCBO –100 V ICBO –10 µA VCB=–100V

VCEO –100 V IEBO –10 mA VEB=–6V
VEBO –6 V VCEO –100 V IC=–10mA
IC –5 A hFE 1000 5000 15000 VCE=–2V, IC=–3A
ICP –8 (PW≤1ms, Du≤50%) A VCE(sat) –1.0 –1.5 V
IC=–3A, IB=–6mA
IB –0.5 A VBE(sat) –1.6 –2.0 V
5 (Ta=25°C)
PT W
25 (Tc=25°C)
Tj 150 °C
Tstg –40 to +150 °C
θ j-c 5 °C/W
3 6 7 10
R1 R2
1 5 8 12
2 4 9 11
–8 (VCE=–4V) (VCE=–4V)
10000 10000
IB= –4mA –2mA
typ
–7 5000 5000
–1.2mA
–6
°C
25
–5 =1
–0.8mA Ta 5°C
7 °C
IC (A)
1000 1000 25
hFE
hFE
0°
–4 C
–0.6mA
500 –3
500
–3
–2 –0.4mA
–1 100 100
0 50 50
0 –1 –2 –3 –4 –5 –0.03 –0.1 –0.5 –1 –5 –8 –0.03 –0.1 –0.5 –1 –5 –8
(IC / IB=1000) (VCE=–4V)
–3 –3 –8
–6
–2 –2
VCE (sat) (V)
VCE (sat) (V)
IC (A)
–4
IC= –5A
IC= –3A
Ta= –30°C
–1 –1
25°C
25°C IC= –1A

75°C
75°C
–2
25°C
Ta=1
–30°C
125°C
0 0 0
–0.3 –0.5 –1 –5 –8 –0.3 –1 –5 –10 –50 –100 –200 0 –1 –2 –3

20 25 –8
–5
10
Natural Cooling
0µ
Heatsink: Aluminum
s
10 20 in mm
1m
s
10
W
m
ith
–1
Inf
θ j–a (°C/W)
5
15
in
IC (A)
PT (W)
ite
10
He
0× –0.5
ats
10
0×
ink
10 2
50 ×
50 ×
2
Without Heatsink –0.1
1 5
Single Pulse
–0.05 Without Heatsink
Ta=25°C
0.5 0 –0.03
1 5 10 50 100 500 1000 –40 0 50 100 150 –3 –5 –10 –50 –100
24
SLA4071 PNP Darlington

Specification
Symbol Ratings Unit Symbol Unit Conditions
min typ max
IC –5 A hFE 2000 5000 15000 VCE=–2V, IC=–3A
IC=–3A, IB=–6mA
IB –0.5 A VBE(sat) –1.6 –2.0 V
IF –5 (PW≤0.5ms, Du≤25%) A ●Diode for flyback voltage absorption (Ta=25°C)
IFSM –8 (PW≤10ms, single) A Specification
VR 120 V Symbol min typ max Unit Conditions
5 (Ta=25°C) VR 120 V IR=10µA
PT W
25 (Tc=25°) VF 1.2 V IF=1A
VISO 1000 (Between fin and lead pin, AC) Vrms IR 10 µA VR=120V
Tj 150 °C trr 100 ns IF=±100mA
Tstg –40 to +150 °C
θ j-c 5 °C/W
6 7
R1 R2
1
5 8 12
2 3 4 9 10 11 R1: 3kΩ typ R2: 100Ω typ
(VCE=–4V) 10000
(VCE=–4V)
–8 10000
A
–2m typ
A
–7 5000
m
5000
–4
IB=
mA
–6 –1.2
°C
–5 –0.8mA 2 5 °C
1000 =1 75 °C
1000 Ta
IC (A)
25
hFE
hFE
–4
0°
C
–0.6mA
500 500 –3
–3
–2 –0.4mA
–1 100 100
0 50 50
0 –1 –2 –3 –4 –5 –0.03 –0.1 –0.5 –1 –5 –8 –0.03 –0.1 –0.5 –1 –5 –8
(IC / IB=1000) –3 (VCE=–4V)
–3 –8
–6
–2 –2
VCE (sat) (V)
VCE (sat) (V)
IC (A)
IC=–5A
–4
IC=–3A
Ta=–30°C
–1 –1
25°C IC=1A
25°C
75°C
–2
75°C
25°C
–30°C
Ta=1
125°C
0 0 0
–0.3 –0.5 –1 –5 –8 –0.3 –0.5 –1 –5 –10 –50 –100 –200 0 –1 –2 –3

20 25 –10
10

0µ
Natural Cooling
s
Heatsink: Aluminum –5
10 20 in mm
1m
10
s
W
m
s
ith
θ j–a (°C / W)
Inf
5
15
init
–1
PT (W)
eH
IC (A)
10
ea
0× –0.5
tsin
10
0×
k
10 2
50×
50×
2
Without Heatsink
1 5 –0.1
Single Pulse
0.5 0 –0.03 Ta=25°C
1 5 10 50 100 500 1000 –40 0 50 100 150 –3 –5 –10 –50 –100
25
SLA4310
PNP + NPN
H-bridge External dimensions A ••• SLA (12-pin)
Absolute maximum ratings (Ta=25°C)

Ratings
Symbol NPN PNP Unit
VCBO 60 –60 V
VCEO 60 –60 V
VEBO 6 –6 V
IC 4 –4 A
ICP 6 (PW≤1ms, Du≤50%) –6 (PW≤1ms, Du≤50%) A
IB 1 –1 A
5 (Ta=25°C)
PT W
25 (Tc=25°C)
Tj 150 °C
Tstg –40 to +150 °C
θ j-c 5 °C/W

7 10
8 12
9 11
2 4
1 5
3 6
IC-VCE Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)
NPN PNP NPN (VCE=4V)
4 –4 4
60mA A
A
m
80
m
50mA
70
=– A
IB=
IB 0m
–6 0mA
40mA –5
3 –3 3
mA
–40
30mA
–30mA
IC (A)
IC (A)
IC (A)
2 20mA 2
–2
–20mA
10mA
–10mA
1 –1 1
°C
5mA
–5mA
125
C
C
–30°C
75°
25°
Ta=
0 0 0
0 1 2 3 4 5 6 0 –1 –2 –3 –4 –5 –6 0 0.5 1.0 1.5
VCE (V) VCE (V) VBE (V)
hFE-IC Characteristics (Typical)

NPN (VCE=4V) PNP (VCE=–4V) PNP (VCE=–4V)
500 –4
500
–3
typ
typ
IC (A)
hFE
100 –2
hFE
100
50
50
75° C
–1
°
C
125
–30 C
25°
Ta=
°C
20 20 0
0.01 0.05 0.1 0.5 1 4 –0.01 –0.05 –0.1 –0.5 –1 –4 0 –0.5 –1.0 –1.5
IC (A) IC (A) VBE (V)
hFE-IC Temperature Characteristics (Typical)

NPN (VCE=4V) PNP (VCE=–4V)
500 500
Ta=125°C
75°C
Ta=125°C
25°C 75°C
25°C
hFE
hFE
100 100
–30°C –30°C
50
50
20 20
0.01 0.05 0.1 0.5 1 4 –0.01 –0.05 0.1 –0.5 –1 –4
IC (A) IC (A)
26
SLA4310
Electrical characteristics (Ta=25°C)
NPN PNP
Symbol Specification Specification
Unit Conditions Unit Conditions
min typ max min typ max
ICBO 10 µA VCB=60V –10 µA VCB=–60V
IEBO 10 µA VEB=6V –10 µA VEB=–6V
VCEO 60 V IC=25mA –60 V IC=–25mA
hFE 80 VCE=4V, IC=1A 80 VCE=–4V, IC=–1A
VCE(sat) 0.6 V IC=2A, IB=0.2A –0.6 V IC=–2A, IB=–0.2A
VCE(sat)-IB Characteristics (Typical) θ j-a-PW Characteristics
NPN PNP
1.5 –1.5 20
10
θj–a (°C / W)
1.0
VCE (sat) (V)
–1.0
VCE (sat) (V)
0.5 IC= –0.5

3A
IC=3
A 1
2A 2A
1A 1A
0 0 0.5
0.005 0.01 0.05 0.1 0.5 1 –0.005 –0.01 –0.05 –0.1 –0.5 –1 1 5 10 50 100 500 1000
IB (A) IB (A) PW (mS)
VCE(sat) • VBE(sat)-IC Characteristics (Typical) PT-Ta Characteristics

NPN (IC / IB=10) PNP (IC / IB=10)
1.0 –1.0 25
Natural Cooling
Heatsink: Aluminum
in mm
20
VCE (sat) • VBE (sat) (V)
VCE(sat) • VBE(sat) (V)
W
ith
Inf
15
in
PT (W)
ite
He
10
0.5 –0.5 0×
ats
10
ink
0×
10 2
VBE (sat) VBE (sat)
50
×50
×2
Without Heatsink
5
VCE (sat) VCE (sat)

0 0 0
0.05 0.1 0.5 1 3 –0.05 –0.1 –0.5 –1 –3 –40 0 50 100 150
IC (A) IC (A) Ta (°C)
Safe Operating Area (SOA)

NPN PNP
10 –10
5 –5
1m
1m
10
s
m
10
s
m
s
–1
IC (A)
1
IC (A)
0.5 –0.5
Single Pulse Single Pulse

0.1 Without Heatsink –0.1 Without Heatsink
T=25°C Ta=25°C
0.05 –0.05
3 5 10 50 100 –3 –5 –10 –50 –100
VCE (V) VCE (V)
27
SLA4340 PNP + NPN Darlington

Ratings
Symbol NPN PNP Unit
VCBO 60 –60 V
VCEO 60 –60 V
VEBO 6 –6 V
IC 4 –4 A
IB 0.5 –0.5 A
5 (Ta=25°C)
PT W
25 (Tc=25°C)
Tj 150 °C
Tstg –40 to +150 °C
θ j-c 5 °C/W

7
R3 R4
8 12
9 11
2 4
1 5
R1 R2
6
R1: 3kΩ typ R2: 200Ω typ R3: 3kΩ typ R4: 150Ω typ
NPN PNP NPN
(VCE=4V)
6 –6 6
mA
2.0mA –1.8 –1.5mA
mA
IB=4.0mA
.2
–2
–1.2mA 5
IB=
1.2mA
–1.0mA
4 0.8mA –4 4
IC (A)
IC (A)
–0.9mA
IC (A)
0.6mA
–30°C
25°C
–0.8mA 3
0.5mA
T a= 1
0.4mA
2 –2 2
75°C
25°C
1
0 0 0
0 2 4 6 0 1 2 3
0 –2 –4 –6
VCE (V) VBE (V)
VCE (V)

NPN (VCE=4V)
PNP PNP
10000 (VCE=–4V) (VCE=–4V)
10000 –6
typ
5000 5000 typ
–5
–4
°C
Ta=125
IC (A)
1000 1000
–30°C
hFE
hFE
–3
500 500
75°C
–2
25°C
–1
100 100
50 50 0
0.03 0.1 0.5 1 56 –0.03 –0.1 –0.5 –1 –5 –6 0 –1 –2 –3
IC (A) VBE (V)
IC (A)

NPN PNP
(VCE=4V) (VCE=–4V)
10000 10000
5000 °C 5000
25
=1 °C
Ta 75
°C
25
0°
C
–3 °C 75°C
25
1000 1000 =1 25°C
Ta
hFE
hFE
500 500
0°
C
–3
100 100
50 50
0.03 0.1 0.5 1 5 6 –0.03 –0.1 –0.5 –1 –5 –6
IC (A) IC (A)
28
SLA4340
NPN PNP
IEBO 10 mA VEB=6V –10 mA VEB=–6V
VCE(sat) 1.5 V IC=3A, IB=6mA –1.5 V IC=–3A, IB=–6mA
NPN PNP
3 –3 20
10
θj–a (°C / W)
2 –2
VCE (sat) (V)
VCE (sat) (V)
IC=4A
IC=–4A
IC=2A IC=–2A
1 –1
IC=1A
IC=–1A
1
0 0 0.5
0.2 0.5 1 5 10 50 100 –0.2 –0.5 –1 –5 –10 –50 –100 1 5 10 50 100 500 1000
IB (mA) PW (mS)
IB (mA)
VCE(sat)-IC Temperature Characteristics (Typical) PT-Ta Characteristics

NPN PNP (IC / IB=1000)
(IC / IB=1000) 25
3 –3
Natural Cooling
25°C
Heatsink: Aluminum
20 in mm
75°C
W
ith
2 –2
VCE (sat) (V)
VCE (sat) (V)
Inf
°C
init
15
125
PT (W)
eH
Ta =
ea
25°C 10
tsin
0×
C
0°
10
k
75°C
–3
10 0×
2
1 –1 Ta=–30°C 50
×50
×2
Without Heatsink
5
125°C
0 0 0
0.5 1 5 6 –0.5 –1 –5 –6 –40 0 50 100 150

NPN PNP
10 –10
5 –5
1m
s
10
m
1m
s
s
10
1 –1
ms
IC (A)
IC (A)
0.5 –0.5
0.1 –0.1
0.03 Ta=25°C –0.03 Ta=25°C
3 5 10 50 100 –3 –5 –10 –50 –100
VCE (V) VCE (V)
29
SLA4390
PNP + NPN Darlington

Ratings
Symbol NPN PNP Unit
VCBO 100 –100 V

VCEO 100 –100 V
VEBO 6 –6 V
IC 5 –5 A
IB 0.5 –0.5 A
5 (Ta=25°C)
PT W
25 (Tc=25°C)
Tj 150 °C
Tstg –40 to +150 °C
θ j-c 5 °C/W

7
R3 R4
8 12
9 11
2 4
1 5
R1 R2
6 R1: 2.5kΩ typ R2: 200Ω typ R3: 3kΩ typ R4: 100Ω typ
NPN PNP NPN
(VCE=4V)
8 –8 8
IB=–4mA
A –2mA
m –7
7 =2 1mA
IB
–1.2mA
0.8mA 6
6 –6
A
0.7m
5 –5 –0.8mA
IC (A)
IC (A)
A
IC (A)
0.6m
4 –4 4
0.5mA –0.6mA
3 –3
0.4mA
–2
25°C
2 –0.4mA 2
75°C
25°C
–30°C
Ta=1
1 –1
0 0 0
0 1 2 3 4 5 0 –1 –2 –3 –4 –5 0 1 2 3

NPN PNP PNP
(VCE=4V) (VCE=–4V) (VCE=–4V)
20000 20000 –8
10000 typ 10000

typ
5000 5000
–6
IC (A)
1000 1000
hFE
hFE
–4
500 500
–2
°C
100 100
C
25°C
125
–30°C
75°
Ta=
50 50
30 30 0
0.03 0.1 0.5 1 5 8 –0.03 –0.1 –0.5 –1 –5 –8 0 –1 –2 –3

NPN PNP
20000 20000
10000 10000
25°C
5000 5000
°C
25
=1
Ta
75°C
5°
C
2 °C
1000 =1 75 1000
25°C
Ta
hFE
hFE
0°
C
500 –3 500
0°
C
–3
100 100
50 50
30 30
0.03 0.05 0.1 0.5 1 5 8 –0.03 –0.05 –0.1 –0.5 –1 –5 –8
IC (A) IC (A)
30
SLA4390
NPN PNP
NPN PNP
3 –3 20
10
2 –2
VCE (sat) (V)
VCE (sat) (V)
θ j–a (°C / W)
5
IC=–5A
IC=5A
IC=–3A
IC=3A
1 IC=1A –1 IC=–1A
0 0 0.5
0.2 0.5 1 5 10 50 –0.2 –0.5 –1 –5 –10 –50 –100 –500
1 5 10 50 100 500 1000
IB (mA) IB (mA) PW (mS)

NPN PNP
(IC / IB=1000) (IC / IB=1000) 25
3 –3
Natural Cooling
Ta=125°C
Heatsink: Aluminum
20 in mm
W
ith
2 –2
VCE (sat) (V)
VCE (sat) (V)
Inf
75°C
15
init
PT (W)
eH
25°C 10
0×
ea
10
tsin
° C 0 ×2
k
30 Ta=–30°C 10
–
1 –1 25°C 50
75°C × 50
× 2
Without Heatsink
5
125°C
0 0 0
0.3 0.5 1 5 8 –0.3 –0.5 –1 –5 –8 –40 0 50 100 150

NPN PNP
10 –10
10
10
5 –5
0µ
0µ
s
1m
s
1m
s
10
s
10
ms
m
s
1 –1
IC (A)
IC (A)
0.5 –0.5
0.1 –0.1
Ta=25°C Ta=25°C
0.03 –0.03
3 5 10 50 100 –3 –5 –10 –50 –100
VCE (V) VCE (V)
31
SLA4391

Ratings
Symbol NPN PNP Unit
VCBO 100 –100 V
VCEO 100 –100 V
VEBO 6 –6 V
IC 5 –5 A
IB 0.5 –0.5 A
IF 5 (PW≤0.5ms, Du≤25%) A
IFSM 8 (PW≤10ms, single) A
VR 120 V
5 (Ta=25°C)
PT W
25 (Tc=25°C)
Tj 150 °C
Tstg –40 to +150 °C
θ j-c 5 °C/W
R3 R4
3 10
1 12
2 11
4 9
5 8
R1 R2
6 7
R1: 2.5kΩ typ R2: 200Ω typ R3: 3kΩ typ R4: 100Ω typ
NPN PNP NPN
(VCE=4V)
8 –8 8
IB=–4mA
A –2mA
m
7 =2 1mA
–7
IB
0.8mA –1.2mA
6 –6 6
A
0.7m
5 –5 –0.8mA
IC (A)
6mA
IC (A)
IC (A)
0.
4 –4 4
0.5mA –0.6mA
3 –3
0.4mA
2 –2 –0.4mA 2
°C
C
25°C
125
–30°C
75°
1 –1
Ta=
0 0 0
0 1 2 3 4 5 0 –1 –2 –3 –4 –5 0 1 2 3

NPN PNP PNP
(VCE=4V) (VCE=–4V) (VCE =–4V)
20000 20000 –8
10000 typ 10000

typ
5000 5000
–6
IC (A)
1000 1000
hFE
hFE
–4
500 500
–2
C
75°C
°
100
25°C
100
125
–30°C
Ta=
50 50
30 30 0
0.03 0.1 0.5 1 5 8 –0.03 –0.1 –0.5 –1 –5 –8 0 –1 –2 –3

NPN PNP
20000 20000
10000 10000
5000 5000
5°
C 75°C
2 °C 75°C
1000 =1 25°C 25
Ta 1000 =1 25°C
hFE
Ta
hFE
500
0°
C 500
0°
C
–3 –3
100 100
50 50
30 30
0.03 0.1 0.5 1 5 8 –0.03 –0.1 –0.5 –1 –5 –8
IC (A) IC (A)
32
SLA4391
NPN PNP
●Diode for flyback voltage absorption (Ta=25°C)

Specification
Symbol min typ max Unit Conditions
VR 120 V IR=10µA
VF 1.2 V IF=1A
IR 10 µA VR=100V
NPN PNP
3 –3 20
10
2 –2
VCE (sat) (V)
VCE (sat) (V)
θ j–a (°C / W)
IC=–5A
IC=5A
IC=–3A
IC=3A
1 –1 IC=–1A
IC=1A
0 0 0.5
0.2 0.5 1 5 10 50 –0.2 –0.5 –1 –5 –10 –50 –100 –500 1 5 10 50 100 500 1000

NPN PNP
(IC / IB=1000) (IC / IB=1000) 25
3 –3
Natural Cooling
75°C
°C
Heatsink: Aluminum
Ta=125
20 in mm
W
ith
2 –2
Inf
VCE (sat) (V)
VCE (sat) (V)
init
15
PT (W)
eH
25°C
ea
10
tsin
0×
k
10
0°
C
10 0×
–3 Ta=–30°C 2
1 –1 25°C 50
75°C ×50
Without Heatsink ×2
5
125°C
0 0 0
0.3 0.5 1 5 8 –0.3 –0.5 –1 –5 –8 –40 0 50 100 150
IC (A) Ta (°C)
IC (A)

NPN PNP
10 –10
10
10
5
0µ
–5
0µ
s
1m
s
s
10
1m
ms
s
10
m
s
1 –1
IC (A)
IC (A)
0.5 –0.5
0.1 –0.1
Ta=25°C Ta=25°C
0.03 –0.03
3 5 10 50 100 –3 –5 –10 –50 –100
VCE (V) VCE (V)
33
SLA5001 N-channel

Specification
VDSS 100 V V(BR)DSS 100 V ID=250µA, VGS=0V

VGSS ±20 V IGSS ±500 nA VGS=±20V
ID ±5 A IDSS 250 µA VDS=100V, VGS=0V
ID(pulse) ±10(PW≤1ms) A VTH 2.0 4.0 V VDS=10V, ID=250µA
EAS* 30 mJ Re(yfs) 2.4 3.7 S VDS=10V, ID=5A
5 (Ta=25°C, with all circuits operating, without heatsink) W RDS(ON) 0.27 0.30 Ω VGS=10V, ID=5A
PT
35 (Tc=25°C,with all circuits operating, with infinite heatsink) W Ciss 350 pF VDS=25V, f=1.0MHz,
θ j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W Coss 130 pF VGS=0V
θ j-c 3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/W ton 60 ns ID=5A, VDD 50V,VGS=10V,
VISO 1000 (Between fin and lead pin, AC) Vrms toff 40 ns see Fig. 3 on page 16.
Tch 150 °C VSD 1.1 1.8 V ISD=5A, VGS=0V
Tstg –40 to +150 °C trr 330 ns ISD=±100mA
* : VDD=20V, L=10mH, ID=2.5A, unclamped, see Fig. E on page 15.
2 4 9 11
1 5 8 12
3 6 7 10
ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) RDS(ON)-ID Characteristics (Typical)
(VDS=10V) (VGS=10V)
10 10 0.4
10V 7V
8 8
0.3
6V
(Ω)
6 6
ID (A)
ID (A)
(ON)
0.2
RDS
4 4 TC=–40°C
5V 25°C
125°C 0.1
2 2
VGS=4V
0 0 0
0 2 4 6 8 10 0 2 4 6 8 0 2 4 6 8 10
VDS (V) VGS (V) ID (A)
Re(yfs)-ID Characteristics (Typical) RDS(ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical)

ID=5A VGS=0V
(VDS=10V) VGS=10V f=1MHz
7 0.5 1000
5
500 Ciss
0.4
Capacitance (pF)
(Ω)
Re (yfs) (S)
0.3
Coss
(ON)
100
RDS
TC=–40°C 0.2
1
25°C 50
125°C
0.1 Crss
0.5
0.3 0 10
0.05 0.1 0.5 1 5 10 –40 0 50 100 150 0 10 20 30 40 50
ID (A) TC (°C) VDS (V)
IDR-VSD Characteristics (Typical) Safe Operating Area (SOA) PT-Ta Characteristics

(TC=25°C)
10 20 40
10 With Silicone Grease
ID (pulse) max 0µ
s 35 Natural Cooling
10
All Circuits Operating
8 1m
ED 10 s 30
5 IT m
M
LI s
(1
sh
W
)
N
ot 25
ith
(O
6 S )
IDR (A)
PT (W)
In
ID (A)
D
R
fin
ite
20
He
at
1
sin
4
k
15
V
10 0.5
5V 10
2
V
=0
Without Heatsink
VGS
0 0.1 0
0 0.5 1.0 1.5 0.5 1 5 10 50 100 0 50 100 150
VSD (V) Ta (°C)
VDS (V)
34
SLA5002 N-channel

Specification
ID(pulse) ±10 (PW≤1ms) A VTH 2.0 4.0 V VDS=10V, ID=250µA
IF 5 (PW≤0.5ms, Du≤25%) A RDS(ON) 0.27 0.30 Ω VGS=10V, ID=5A
IFSM 10 (PW≤10ms, Single Pulse) A Ciss 350 pF VDS=25V, f=1.0MHz,
VR 120 V Coss 130 pF VGS=0V
5 (Ta=25°C, with all circuits operating, without heatsink) W
PT ton 60 ns ID=5A, VDD 50V,VGS=10V,
35 (Tc=25°C,with all circuits operating, with infinite heatsink) W
toff 40 ns see Fig. 3 on page 16.
θ j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W
VSD 1.1 1.8 V ISD=5A, VGS=0V
θ j-c 3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/W
trr 330 ns ISD=±100mA
Tch 150 °C ●Diode for flyback voltage absorption
Tstg –40 to +150 °C Symbol
Specification
Unit Conditions
min typ max
* : VDD=20V, L=10mH, ID=2.5A, unclamped, see Fig. E on page 15
VR 120 V IR=10µA
VF 1.0 1.2 V IF=1A
2 3 4 9 10 11
IR 10 µA VR=120V
1 5 8 12
6 7
(VDS=10V) (VGS=10V)
10 10 0.4
10V 7V
8 8
0.3
6V
(Ω)
6 6
ID (A)
ID (A)
(ON)
0.2
RDS
4 4 TC=–40°C
25°C
5V
125°C 0.1
2 2
VGS=4V
0 0 0
0 2 4 6 8 10 0 2 4 6 8 0 2 4 6 8 10

ID=5A VGS=0V
7 0.5 1000
5
500 Ciss
0.4
Capacitance (pF)
Re (yfs) (S)
(Ω)
0.3
Coss
(ON)
100
RDS
TC=–40°C
0.2
1
25°C 50
125°C
0.1 Crss
0.5
0.3 0 10
0.05 0.1 0.5 1 5 10 –40 0 50 100 150 0 10 20 30 40 50

(TC=25°C)
10 20 40
10
ID (pulse) max 0µ With Silicone Grease
10
8 1m
ED 10 s
5 IT m 30
M
LI s
(1
N
) sh
W
(O ot 25
ith
6 S )
ID (A)
PT (W)
D
In
R
IDR (A)
fin
ite
20
He
a
1
ts
in
4
k
15
V
10 0.5
5V 10
2
0V
Without Heatsink
S=
5
VG
0 0.1 0
0 0.5 1.0 1.5 0.5 1 5 10 50 100 0 50 100 150
VSD (V) VDS (V) Ta (°C)
35
SLA5003 N-channel

Specification
IF 5(PW≤0.5ms, Du≤25%) A RDS(ON) 0.67 0.9 Ω VGS=10V, ID=5A
IFSM 10(PW≤10ms, Single pulse) A
Ciss 260 pF VDS=25V, f=1.0MHz,
VR 200 V
Coss 100 pF VGS=0V
PT ton 50 ns ID=5A, VDD 100V,VGS=10V,
35 (Tc=25°C, with all circuits operating, with infinite heatsink) W
θ j-c 3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/W VSD 1.1 1.5 V ISD=5A, VGS=0V
VISO 1000 (Between fin and lead pin, AC) Vrms trr 700 ns ISD=±100mA
Tch 150 °C ●Diode for flyback voltage absorption (1 circuit)
Tstg –40 to +150 °C Specification
■Equivalent circuit diagram VR 200 V IR=10µA
2 3 4 9 10 11 1.0 1.2 V IF=1A
VF
1.5 2.0 V IF=5A
IR 10 µA VR=200V
1 5 8 12 trr 100 ns IF=±100mA
6 7
(VDS=10V) (VGS=10V)
8 8 1.5
10V
6 6
7V 1.0
ID (A)
(Ω)
ID (A)
4 4
(ON)
6V
RDS
TC=–40°C 0.5
2 25°C
2
125°C
VGS=5V
0 0 0
0 5 10 15 20 0 2 4 6 8 10 0 1 2 3 4 5 6 7 8

ID=5A VGS=0V
5 2.5 1000
500
TC=–40°C
2.0 Ciss
25°C
Capacitance (pF)
125°C
Re (yfs) (S)
(Ω)
1.5
100
(ON)
Coss
1
RDS
50
1.0
0.5
Crss
0.5
10
0.2 0 5
0.05 0.1 0.5 1 5 10 –40 0 50 100 150 0 10 20 30 40 50

(TC=25°C)
8 20 40
ID (pulse) max With Silicone Grease
10 10
0µ 35 Natural Cooling
s All Circuits Operating
5 N)D
(O
TE 1m 30
6 RD LIMI
S
s
10
ms
25
W
(1s
ith
PT (W)
ho
ID (A)
IDR (A)
t)
In
1
fin
20
ite
4
He
0.5
at
sin
15
k
2 10
0.1
10V Without Heatsink
5
VGS=0V 0.05
5V
0.03 0
0 0 50 100 150
0 0.5 1.0 1.5 3 5 10 50 100 200
36
SLA5004
P-channel

Specification
VDSS –60 V V(BR)DSS –60 V ID=–250µA, VGS=0V

VGSS 20 V IGSS 500 nA VGS= 20V
ID 5 A IDSS –250 µA VDS=–60V, VGS=0V
ID(pulse) 10 (PW≤1ms) A VTH –2.0 –4.0 V VDS=–10V, ID=–250µA
5 (Ta=25°C, with all circuits operating, without heatsink) W Re(yfs) 2.3 3.5 S VDS=–10V, ID=–5A
PT
35 (Tc=25°C, with all circuits operating, with infinite heatsink) W RDS(ON) 0.22 0.30 Ω VGS=–10V, ID=–5A
θ j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W Ciss 570 pF VDS=–25V, f=1.0MHz,
θ j-c 3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/W Coss 360 pF VGS=0V
VISO 1000 (Between fin and lead pin, AC) Vrms ton 100 ns ID=–5A, VDD –30V,VGS=–10V,
Tch 150 °C toff 60 ns see Fig. 4 on page 16.
Tstg –40 to +150 °C VSD –4.5 –5.5 V ISD=–5A
±
trr 150 ns ISD= 100mA
3 6 7 10
1 5 8 12
2 4 9 11
(VDS=–10V) (VGS=–10V)
-–10 ---10 0.25
–10V –7V TC=–40°C
25°C
---8 ---8 125°C 0.20

(Ω)
---6 ---6 0.15

ID (A)
–6V
ID (A)
(ON)
RDS
---4 ---4 0.10
---2 –5V ---2 0.05
VGS=–4V
0 0 0
0 ---2 ---4 ---6 ---8 ---10 0 ---2 ---4 ---6 ---8 0 ---2 ---4 ---6 ---8 ---10

ID=–5A VGS=0V
(VDS=–10V) VGS=–10V f=1MHz
8 0.4 2000
5 1000
0.3 Ciss
Capacitance (pF)
500
(Ω)
Re (yfs) (S)
Coss
(ON)
0.2
RDS
TC=–40°C
1 25°C
100
125°C
0.1
Crss
0.5 50
0.3 0 30
---0.1 ---0.5 ---1 ---5 ---10 ---40 0 50 100 150 0 ---10 ---20 ---30 ---40 ---50

(TC=25°C)
–10 ---20 40
10
ID (pulse) max 0µ With Silicone Grease
---10 1m
–8 10 s
ED m
---5 IT s 30
M (1
LI sh
) ot
N )
W
(O 25
V
–6
ith
S
–1 0
PT (W)
D
IDR (A)
R
In
ID (A)
fin
ite
20
He
---1
at
sin
–4
V
15
–5
0V
---0.5
S=
10
VG
–2
Without Heatsink
5
0 ---0.1 0
0 –1 –2 –3 –4 ---0.5 ---1 ---5 ---10 ---50 ---100 0 50 100 150
37
SLA5005
P-channel

Specifications
Symbol Ratings Unit Symbol min typ max Unit Condition
PT
VISO 1000 (Between fin and lead pin, AC) Vrms ton 150 ns ID=–5A, VDD –50V, VGS=–10V,
Tstg –40 to +150 °C VSD –4.5 –5.5 V ISD=–5A, VGS=0V
3 6 7 10
1 5 8 12
2 4 9 11
(VDS=–10V) (VGS=–10V)
–10 –10 1.0
–10V TC=–40°C
25°C
–8 –8 0.8
125°C
–7V
(Ω)
–6 –6 0.6
ID (A)
ID (A)
RDS (ON)
–4 –6V 0.4
–4
–2 –5V –2 0.2
VGS=–4V
0 0 0
0 –2 –4 –6 –8 –10 0 ---2 ---4 ---6 ---8 ---10
0 –2 –4 –6 –8 –10
VDS (V) ID (A)
VGS (V)

ID=–5A VGS=0V
5 1.2 1000
1.0 500
Ciss
Capacitance (pF)
0.8
Re (yfs) (S)
(Ω)
(ON)
Coss
0.6
RDS
1
100
TC=–40°C
0.4
25°C
50
0.5 125°C Crss
0.2
0.3 0 20
---0.05 ---0.1 ---0.5 ---1 ---5 ---10 ---40 0 50 100 150 0 ---10 ---20 ---30 ---40 ---50

(TC=25°C)
---10 ---20 40
ID (pulse) max 10 With Silicone Grease

---10 s
---8
10 1m 30
---5 ED m s
IT s
M (1
LI sh
W
ot 25
ith
)
---6
IDR (A)
N )
PT (W)
(O
In
fin
S
ID (A)
D
R
ite
20
H
ea
ts
---1
ink
---4
15
0V ---0.5
–1
V 10
–5
---2
0V Without Heatsink
S= 5
G
V
0 ---0.1 0
0 ---1 ---2 ---3 ---4 ---0.5 –1 ---5 ---10 ---50 ---100 0 50 100 150
38
SLA5006 P-channel

Specification
Symbol Ratings Unit Symbol min typ max Unit Condition
±
µA
±
ID 5 A IDSS –250 VDS=–100V, VGS=0V
ID(pulse) 10(PW≤1ms)
A VTH –2.0 –4.0 V VDS=–10V, ID=–250µA
IF 5(PW≤0.5ms, Du≤25%) A Re(yfs) 0.9 2.0 S VDS=–10V, ID=–5A
IFSM 10(PW≤10ms, Single pulse) A RDS(ON) 0.55 0.7 Ω VGS=–10V, ID=–5A
VR 120 V Ciss 300 pF VDS=–25V, f=1.0MHz,
5 (Ta=25°C, with all circuits operating, without heatsink) W Coss 200 pF VGS=0V
PT
35 (Tc=25°C, with all circuits operating, with infinite heatsink) W ton 150 ns ID=–5A, VDD –50V, VGS=–10V,
θ j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W toff 200 ns see Fig. 4 on page 16.
θ j-c 3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/W VSD –4.5 –5.5 V ISD=–5A, VGS=0V
VISO 1000 (Between fin and lead pin, AC) Vrms trr 220 ns ISD= 100mA
Tch 150 °C
Tstg –40 to +150 °C ●Diode for flyback voltage absorption
Specification
■Equivalent circuit diagram Symbol min typ max Unit Condition
6 7 VR 120 V IR=10µA
VF 1.0 1.2 V IF=1A
IR 10 µA VR=120V
1 5 8 12 trr 100 ns IF= 100mA
2 3 4 9 10 11
(VDS=–10V) (VGS=–10V)
–10 –10 1.0
40°C
–10V
°C
25
TC=–
5°
C
–8 –8 0.8
12
–7V
(Ω)
–6 –6 0.6
ID (A)
ID (A)
RDS(ON)
–4 –6V –4 0.4
–2 –5V –2 0.2
VGS=–4V
0 0 0
0 –2 –4 –6 –8 –10 0 –2 –4 –6 –8 –10 0 ---2 ---4 ---6 ---8 ---10

ID=–5A VGS=0V
5 1.2 1000
1.0 500
Ciss
Capacitance (pF)
0.8
(Ω)
Re (yfs) (S)
(ON)
0.6 Coss
RDS
1 100
TC=–40°C 0.4
25°C
50
0.5 125°C 0.2 Crss
0.3 0 20
---0.05 ---0.1 ---0.5 ---1 ---5 ---10 –40 0 50 100 150 0 ---10 ---20 ---30 ---40 ---50

(TC=25°C)
---10 ---20 40
---10 0µ 35 Natural Cooling
s
---8 1m
s
10 30
---5 ED m
IT s
M
LI (1
W
sh 25
---6
ith
) ot
PT (W)
N )
IDR (A)
In
(O
ID (A)
fin
S
D
ite
R 20
He
at
---1
sin
---4
k
15
0V
–1 ---0.5
V
–5 10
---2
0V
Without Heatsink
S=
5
VG
0 ---0.1 0
0 ---1 ---2 ---3 ---4 ---0.5 ---1 ---5 ---10 ---50 ---100 0 50 100 150
39
SLA5007 N-channel + P-channel

Ratigs
Symbol N channel P channel Unit
VDSS 60 –60 V
VGSS ±20 20 V
ID ±5 4 A
ID(pulse) ±10 (PW≤1ms) 8 (PW≤1ms) A
EAS* 2 — mJ
PT
Tch 150 °C
Tstg –40 to +150 °C
* : VDD=20V, L=1mH, ID=2A, unclamped, see Fig. E on page 15.

10 7
Pch 12 8
11 9
2 4
Nch 1 5
3 6
ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical)
N-ch P-ch N-ch
(VDS=10V)
10 –8 10
10V 7V –10V
8 8
–6
6 6V –7V 6
ID (A)
ID (A)
ID (A)
–4
4 4
TC=–40°C
–6V
5V 25°C
–2
2 2 125°C
–5V
VGS=4V
VGS=–4V
0 0 0
0 2 4 6 8 10 0 –2 –4 –6 –8 –10 0 2 4 6 8
VDS (V) VDS (V) VGS (V)
RDS(ON)-ID Characteristics (Typical)

N-ch P-ch P-ch
(VGS=10V) (VGS=–10V) (VDS=–10V)
0.20 0.6 –8
TC=–40°C
0.5 25°C
0.15 125°C
–6
(Ω)
0.4
(Ω)
(ON)
ID (A)
(ON)
0.10 0.3 –4
RDS
RDS
0.2
0.05 –2
0.1
0 0 0
0 2 4 6 8 10 0 ---2 ---4 ---6 ---8 0 –2 –4 –6 –8 –10
ID (A) ID (A) VGS (V)
RDS(ON)-TC Characteristics (Typical)

N-ch ID=5A P-ch ID=–4A
VGS=10V VGS=–10V
0.3 1.0
0.8
0.2
(Ω)
(Ω)
0.6
(ON)
(ON)
RDS
RDS
0.4
0.1
0.2
0 0
---40 0 50 100 150 ---40 0 50 100 150
TC (°C) TC (°C)
40
SLA5007
N channel P channel
V(BR)DSS 60 V ID=250µA, VGS=0V –60 V ID=–250µA, VGS=0V
IGSS ±500 nA VGS=±20V 500 nA VGS= 20V
IDSS 250 µA VDS=60V, VGS=0V –250 µA VDS=–60V, VGS=0V
VTH 2.0 4.0 V VDS=10V, ID=250µA –2.0 –4.0 V VDS=–10V, ID=–250µA
Re(yfs) 2.2 3.3 S VDS=10V, ID=5A 1.6 2.2 S VDS=–10V, ID=–4A
RDS(ON) 0.17 0.22 Ω VGS=10V, ID=5A 0.38 0.55 Ω VGS=–10V, ID=–4A
Ciss 300 pF VDS=25V, f=1.0MHz, 270 pF VDS=–25V, f=1.0MHz,
Coss 160 pF VGS=0V 170 pF VGS=0V
ton 35 ns ID=5A, VDD 30V,VGS=10V 60 ns ID=–4A, VDD –30V,VGS=10V,
toff 35 ns see Fig. 3 on page 16. 60 ns see Fig. 4 on page 16.
VSD 1.1 1.5 V ISD=5A, VGS=0V –4.4 –5.5 V ISD=–4A, VGS=0V
trr 140 ns ISD=±100mA 150 ns ISD= 100mA
Re(yfs)-ID Characteristics (Typical) Safe Operating Area (SOA)
N-ch P-ch N-ch
(VDS=10V) (VDS=–10V) (TC=25°C)
10 5 20
ID (pulse) max
10 10
0µ
5 ED 1m s
IT 10 s
5 LI
M m
°C ) s
40 (O
N (1
=– °C
sh
Re (yfs) (S)
S
TC 25 ot
Re (yfs) (S)
D
°C R )
5°
40 C
5°
C
ID (A)
=– 12
TC 12
1 1
1
25°C
0.5
0.5
0.5
0.3 0.3 0.1

0.08 0.5 1 5 10 ---0.1 ---0.5 ---1 ---5 ---8 0.5 1 5 10 50 100
ID (A) ID (A) VDS (V)
Capacitance-VDS Characteristics (Typical)

N-ch VGS=0V P-ch VGS=0V P-ch
f=1MHz f=1MHz (TC=25°C)
1000 700 ---10
500 ID (pulse) max
10
0µ
500 ---5
s
Ciss
1m
10
Ciss
ED
m
Capacitance (pF)
s
IT
Capacitance (pF)
(1
M
sh
LI
Coss
ot
N)
Coss
(O
ID (A)
S
RD
100
100 ---1
50 ---0.5
50
Crss
Crss
10 10 ---0.1
0 10 20 30 40 50 0 ---10 ---20 ---30 ---40 ---50 ---0.5 ---1 ---5 ---10 ---50 ---100
VDS (V) VDS (V) VDS (V)
IDR-VSD Characteristics (Typical) PT-Ta Characteristics

N-ch P-ch
10 –8 40
35 Natural Cooling
8
–6 30
W
25
ith
6
IDR (A)
PT (W)
In
IDR (A)
fin
ite
–4 20
He
0V
at
sin
–1
V
4
k
10
15
5V V
–5
0V
0V
–2 10
S=
S=
2
VG
VG
Without Heatsink
5
0 0 0
0 0.5 1.0 1.5 0 –1 –2 –3 –4 –5 0 50 100 150
VSD (V) VSD (V) Ta (°C)
41

Ratings
VDSS 100 –100 V

VGSS ±20 20 V
ID ±4 3 A
EAS* 15 — mJ
PT
θ j-c 3.57 °C/W
Tch 150 °C
Tstg –40 to +150 °C

10 7
Pch 12 8
11 9
2 4
Nch 1 5
3 6
N-ch P-ch N-ch
(VDS=10V)
8 –6 8
–10V
40°C
5°
10V C
7 7 25°C 12
TC=–
–5
6 –7V 6
7V
–4
5 5
ID (A)
ID (A)
ID (A)
4 –3 4
–6V
6V
3 3
–2
2 VGS=–5V 2
VGS=5V
–1
1 1
0 0 0
0 10 20 0 –5 –10 –15 –20 0 2 4 6 8 10

N-ch P-ch P-ch
(VGS=10V) (VGS=–10V) (VDS=–10V)
0.8 1.5 –6
C
25°
40°C
TC=–
–5
5°
C
0.6 12
1.0 –4
(Ω)
(Ω)
ID (A)
(ON)
(ON)
0.4 –3
RDS
RDS
0.5 –2
0.2
–1
0 0 0
0 1 2 3 4 5 6 7 8 0 –1 –2 –3 –4 –5 –6 0 –2 –4 –6 –8 –10

VGS=10V VGS=–10V
1.2 2.0
1.0
1.5
0.8
(Ω)
(Ω)
(ON)
0.6 1.0
(ON)
RDS
RDS
0.4
0.5
0.2
0 0
--- 40 0 50 100 150 –40 0 50 100 150
TC (°C) TC (°C)
42
SLA5008
N channel P channel
Symbol Specifications Specifications
ton 40 ns ID=4A, VDD 50V, VGS=–10V, 90 ns ID=–3A, VDD –50V, VGS=–10V,
VSD 1.2 2.0 V ISD=4A –4.0 –5.5 V ISD=–3A
N-ch P-ch N-ch
(VDS=10V) (VDS=–10V) (TC=25°C)
5 5 10
ID (pulse) max
10
0µ
5
s
1m
ED
10
s
IT
m
M
s
°C
LI
°C
Re (yfs) (S)
40 40
(1
Re (yfs) (S)
=– =–
N)
sh
5°
C °C
(O
TC TC
ot
12 25 C
ID (A)
)
5°
RD
1 1 12
1
25°C 0.5
0.5 0.5
0.2 0.2 0.1

0.05 0.1 0.5 1 5 8 –0.05 –0.1 –0.5 –1 –6 0.5 1 5 10 50 100

600 700 ---10
ID (pulse) max
10
500
0µ
s
---5
Ciss
1m
Ciss
10
s
ED
Capacitance (pF)
m
s
Capacitance (pF)
IT
(1
M
sh
LI
100
ot
N)
100
)
Coss
(O
Coss
ID (A)
S
RD
---1
50
50
---0.5
Crss
Crss
10 10
5 5 ---0.1
0 10 20 30 40 50 0 ---10 ---20 ---30 ---40 ---50 ---0.5 ---1 ---5 ---10 ---50 ---100

N-ch P-ch
8 ---6 40
7 35 Natural Cooling
---5 All Circuits Operating
6 30
---4
5 25
W
IDR (A)
PT (W)
IDR (A)
ith
In
fin
4 ---3 20
ite
H
ea
ts
3 15
in
0V
k
---2 –1
V
2 –5 10
10V 0V
5V –1 S=
0V
Without Heatsink
1 G 5
S=
V
VG
0 0 0
0 0.5 1.0 1.5 0 –1 –2 –3 –4 0 50 100 150
43
3-phase motor drive External dimensions A ••• SLA (12-pin)

Ratings
VDSS 60 –60 V
VGSS ±20 20 V
ID ±5 4 A
EAS* 2 — mJ
PT
Tch 150 °C
Tstg –40 to +150 °C

1
Pch 2 8 9
3 7 10
Nch 4 6 11
5 12
N-ch P-ch N-ch
(VDS=10V)
10 –8 10
10V
7V –10V
8 8
–6
6 6V –7V 6
ID (A)
ID (A)
ID (A)
–4
4 4
TC=–40°C
–6V
5V 25°C
–2
2 2 125°C
–5V
VGS=V
VGS=–4V
0 0 0
0 2a 4 6 8 10 0 –2 –4 –6 –8 –10 0 2 4 6 8

N-ch P-ch P-ch
(VGS=10V) (VGS=–10V) (VDS=–10V)
0.20 0.6 –8
TC=–40°C
0.5 25°C
0.15 125°C
–6
0.4
(Ω)
(Ω)
(ON)
ID (A)
(ON)
0.10 0.3 –4
RDS
RDS
0.2
0.05 –2
0.1
0 0 0
0 2 4 6 8 10 0 –2 –4 –6 –8 0 –2 –4 –6 –8 –10

VGS=10V VGS=–10V
0.3 1.0
0.8
0.2
(Ω)
(Ω)
0.6
(ON)
(ON)
RDS
RDS
0.4
0.1
0.2
0 0
–40 0 50 100 150 –40 0 50 100 150
TC (°C) TC (°C)
44
SLA5009
N channel P channel
ton 35 ns ID=5A, VDD 30V, VGS=–10V, 60 ns ID=–4A, VDD –30V, VGS=–10V,
N-ch (VDS=10V) P-ch (VDS=–10V) N-ch
10 5
(TC=25°C)
20
10
ID (pulse) max 0µ
10 s
5 D 1m
I TE 10
s
0°
C 5 IM m
4 L s
=– (1
Re (yfs) (S)
°C TC °C N
)
sh
Re (yfs) (S)
40 25 (O ot
5°
C S )
=– R
D
TC 12
5°
C
ID (A)
12
1 1
1
25°C 0.5
0.5
0.5
0.3 0.3 0.1

0.08 0.5 1 5 10 –0.1 –0.5 –1 –5 –8 0.5 1 5 10 50 100

1000 700 –10
500 ID (pulse) max
10
0µ
–5
1m
500 Ciss
s
ED
10
Ciss
IT
Capacitance (pF)
Capacitance (pF)
m
M
s
LI
(1
sh
N)
Coss
(O
ot
Coss
)
S
RD
ID (A)
100
100 –1
50 –0.5
50
Crss
Crss
10 10 –0.1
0 10 20 30 40 50 0 –10 –20 –30 –40 –50 –0.5 –1 –5 –10 –50 –100

N-ch P-ch
10 –8 40
35 Natural Cooling
8
–6 30
W
6 25
ith
IDR (A)
PT (W)
IDR (A)
In
fin
ite
0V
–4 20
H
–1
ea
ts
4
in
V
k
–5 15
V
0V
=0V
10
5V
S=
V GS
VG
–2 10
2
Without Heatsink
5
0 0 0
0 0.5 1.0 1.5 0 –1 –2 –3 –4 –5 0 50 100 150
45
SLA5010
N-channel + P-channel

Ratings
VDSS 100 –100 V

VGSS ±20 20 V
ID ±4 3 A
EAS* 16 — mJ
PT
θ j–a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W
θ j–c 3.57 (Junction-Case, Tc=25°C, with all circuits operating ) °C/W
Tch 150 °C
Tstg –40 to +150 °C

1
Pch 2 8 9
3 7 10
Nch 4 6 11
5 12
N-ch P-ch N-ch
(VDS=10V)
8 –6 8
TC=–40°C
10V –10V
7 7 25°C
–5
125°C
6 –7V 6
7V
–4
5 5
ID (A)
ID (A)
ID (A)
4 –3 4
–6V
6V
3 3
–2
2 VGS=–5V 2
VGS=5V
–1
1 1
0 0 0
0 10 20 0 –5 –10 –15 –20 0 2 4 6 8 10

N-ch P-ch P-ch
(VGS=10V) (VGS=–10V) (VDS=–10V)
0.8 1.5 –6
TC=–40°C
25°C
–5
125°C
0.6
1.0 –4
(Ω)
(Ω)
(ON)
(ON)
ID (A)
0.4 –3
RDS
RDS
0.5 –2
0.2
–1
0 0 0
0 1 2 3 4 5 6 7 8 0 –1 –2 –3 –4 –5 –6 0 –2 –4 –6 –8 –10

VGS=10V VGS=–10V
1.2 2.0
1.0
1.5
0.8
(Ω)
(Ω)
(ON)
(ON)
0.6 1.0
RDS
RDS
0.4
0.5
0.2
0 0
–40 0 50 100 150 –40 0 50 100 150
TC (°C) TC (°C)
46
SLA5010
N channel P channel
IGSS ± 500 nA VGS=±20V 500 nA VGS= 20V
ton 40 ns ID=4A, VDD 50V, VGS=10V, 90 ns ID=–3A, VDD –50V, VGS=–10V,
VSD 1.2 2.0 V ISD=4A, VGS=0V –4.0 –5.5 V ISD=–3A
N-ch P-ch N-ch
(VDS=10V) (VDS=–10V) (TC=25°C)
5 5 10
ID (pulse) max
10
0µ
5
s
1m
ED
s
10
°C
IT
m
40
s
=–
LI
(1
TC °C
sh
Re (yfs) (S)
25 C
N)
Re (yfs) (S)
ot
5°
(O
)
12
S
RD
ID (A)
1 1 1
TC=–40°C
0.5
25°C 0.5
0.5
125°C
0.2 0.1
0.2 –0.05 –0.1 –0.5 –1 –6
0.05 0.1 0.5 1 5 8 0.5 1 5 10 50 100
ID (A) VDS (V)
ID (A)

600 700 –10
500 ID (pulse) max
10
0µ
s
–5
Ciss Ciss
1m
ED
Capacitance (pF)
10
s
Capacitance (pF)
IT
m
M
s
LI
(1
100 100
sh
N)
Coss
(O
Coss
ot
ID (A)
)
S
RD
–1
50 50
–0.5
Crss
Crss
10 10
5 5 –0.1
0 10 20 30 40 50 0 –10 –20 –30 –40 –50 –0.5 –1 –5 –10 –50 –100

N-ch P-ch
8 –6 40
35 Natural Cooling
7
–5 All Circuits Operating
6 30
–4
W
5 25
ith
PT (W)
IDR (A)
In
IDR (A)
fin
ite
4 –3 20
He
at
sin
k
3 15
–2 0V
–1
V
2 –5 10
10V
5V –1 0V
S=
0V
Without Heatsink
1 VG 5
S=
VG
0 0 0
0 0.5 1.0 1.5 0 –1 –2 –3 –4 0 50 100 150
47
SLA5011 N-channel

Specification

ID(pulse) ±10(PW≤1ms) A VTH 2.0 4.0 V VDS=10V, ID=250µA
PT
35 (Tc=25°C, with all circuits operating, with infinite heatsink) W Ciss 300 pF VDS=25V, f=1.0MHz,
θ j-c 3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/W ton 35 ns ID=5A, VDD 30V, VGS=10V,
Tch 150 °C VSD 1.1 1.5 V ISD=5A

3 5 7 9 11
2 4 6 8 10
1 12
(VDS=10V) (VGS=10V)
10 10 0.20
10V
7V
8 8
0.15
(Ω)
6 6V 6
(ON)
ID (A)
ID (A)
0.10
RDS
4 4
TC=–40°C
5V 25°C
0.05
2 2 125°C
VGS=4V
0 0 0
0 2 4 6 8 10 0 2 4 6 8 0 2 4 6 8 10

ID=5A VGS=0V
10 0.3 1000
500
5
Ciss
Capacitance (pF)
Re (yfs) (S)
0.2
(Ω)
°C
40 Coss
=–
TC 5°C
(ON)
12
100
RDS
1 0.1 50
25°C
Crss
0.5
0.3 0 10
0.08 0.5 1 5 10 –40 0 50 100 150 0 10 20 30 40 50

(TC=25°C)
10 20 40

10 s
1m All Circuits Operating
8 ED s
IT 10
30
5 M m
LI s
N
) (1
sh
W
(O
ith
S ot 25
6 R
D )
In
PT (W)
IDR (A)
fin
ID (A)
ite
20
He
0V
a
1
ts
1
in
4
k
15
0V
5V
S=
0.5
VG
10
2
Without Heatsink
5
0 0.1 0
0 0.5 1.0 1.5 0.5 1 5 10 50 100 0 50 100 150
48
SLA5012
P-channel

Specification

PT
1 12
2 4 6 8 10
3 5 7 9 11
(VDS=–10V) (VGS=–10V)
–10 –10 0.25
–7V TC=–40°C
–10V
25°C
–8 –8 125°C 0.20
–6 0.15
(Ω)
–6V
–6
ID (A)
ID (A)
(ON)
–4 0.10
RDS
–4
–2 –5V 0.05
–2
VGS=–4V
0 0 0
0 –2 –4 –6 –8 –10 0 –2 –4 –6 –8 0 –2 –4 –6 –8 –10

ID=–5A VGS=0V
8 0.4 2000
5
1000
0.3 Ciss
Capacitance (pF)
°C
40
=– 500
Re (yfs) (S)
TC 5°C
(Ω)
12
Coss
(ON)
0.2
RDS
1 25°C
100
0.1
Crss
0.5
50
0.3 0 30
–0.1 –0.5 –1 –5 –10 –40 0 50 100 150 0 ---10 ---20 ---30 ---40 ---50

–10
(TC=25°C)
–20 40
10
ID (pulse) max
0µ
–10 35 Natural Cooling

s

–8 10 s
ED
–5 m 30
IT
s
M
(1
LI
sh
ot
)
25
N
)
O
–6
ith
S(
IDR (A)
PT (W)
V
In
R
–10
ID (A)
fin
ite
20
He
V
–1
at
–5
sin
–4
15
k
0V
–0.5
S=
10
VG
–2
Without Heatsink
5
0 –0.1 0
0 –1 –2 –3 –4 –0.5 –1 –5 –10 –50 –100 0 50 100 150
49

Ratings
VDSS 100 –100 V

VGSS ±20 20 V
ID ±5 5 A
EAS* 30 — mJ
PT
Tch 150 °C
Tstg –40 to +150 °C

10 7
Pch 12 8
11 9
2 4
Nch 1 5
3 6
N-ch P-ch N-ch
(VDS=10V)
10 –10 10
10V
–10V
7V
8 –8 8
6V
–7V
6 –6 6
ID (A)
ID (A)
ID (A)
4 –4 –6V 4 TC=–40°C
5V 25°C
125°C
2 –2 –5V 2
VGS=4V
VGS=–4V
0 0 0
0 2 4 6 8 10 0 –2 –4 –6 –8 –10 0 2 4 6 8

N-ch P-ch P-ch (VDS=–10V)
(VGS=10V) (VGS=–10V)
0.4 1.0 –10
°C
C
–40
25°
5°
C
TC =
0.8 –8 12
0.3
(Ω)
(Ω)
–6
ID (A)
0.6
(ON)
(ON)
0.2
RDS
RDS
0.4 –4
0.1
0.2 –2
0
0 0 0 –2 –4 –6 –8 –10
0 2 4 6 8 10 0 –2 –4 –6 –8 –10

VGS=10V VGS=–10V
0.5 1.2
1.0
0.4
(Ω)
0.8
(Ω)
0.3
(ON)
(ON)
0.6
RDS
RDS
0.2
0.4
0.1
0.2
0 0
–40 0 50 100 150 –40 0 50 100 150
TC (°C) TC (°C)
50
SLA5013
N channel P channel
N-ch P-ch N-ch
(VDS=10V) (VDS=–10V) (TC=25°C)
7 5 20
ID (pulse) max 10
5 0µ
10 s
1m
5 ED 10 s
IT m
0°
C M s
°C 4 LI (1
Re (yfs) (S)
40
Re (yfs) (S)
=– ) sh
5°
C N
=– TC (O ot
5°
TC 12 C D
S )
ID (A)
12 R
1 1
1
25°C
0.5
25°C
0.5 0.5
0.3 0.3 0.1

0.05 0.1 0.5 1 5 10 –0.05 –0.1 –0.5 –1 –5 –10 0.5 1 5 10 50 100

1000 1000 –20
ID (pulse) max 10
–10 0µ
500 Ciss s
500
Ciss 10 1m
–5 ED
Capacitance (pF)
m s
Capacitance (pF)
IT s
M (1
LI sh
N
) ot
(O )
ID (A)
Coss S
D
Coss R
100
–1
100
50
–0.5
50
Crss Crss
10 20 –0.1
0 10 20 30 40 50 0 –10 –20 –30 –40 –50 –0.5 –1 –5 –10 –50 –100

N-ch P-ch
10 –10 40
35 Natural Cooling
8 –8
30
W
ith
6 –6 25
In
IDR (A)
PT (W)
IDR (A)
fin
ite
20
He
at
sin
4 –4
k
15
10
V 0V
–1 –5
V 10
2 5V
–2
0V
0V
S=
Without Heatsink
S=
5
VG
VG
0 0 0
0 0.5 1.0 1.5 0 –1 –2 –3 –4 0 50 100 150
51
SLA5015 P-channel

Specification

PT
θ j-a 25 (Junction-Air, Ta=25°C, with all circuits op1erating) °C/W Ciss 270 pF VDS=–25V, f=1.0MHz,
1 12
2 4 6 8 10
3 5 7 9 11
(VDS=–10V) (VGS=–10V)
–8 –8 0.6
C
40°C
°
125
–10V
TC=–
25°C
0.5
–6 –6
0.4
(Ω)
–7V
ID (A)
ID (A)
(ON)
–4 –4 0.3
RDS
0.2
–6V
–2 –2
0.1
–5V
VGS=–4V
0 0 0
0 –2 –4 –6 –8 –10 0 –2 –4 –6 –8 –10 0 –2 –4 –6 –8

ID=–4A VGS=0V
5 1.0 700
500
Ciss
0.8
Capacitance (pF)
°C
40
=– °C
TC
Re (yfs) (S)
25 Coss
(Ω)
5°
C
0.6
12
100
(ON)
1
RDS
0.4
50
0.5 0.2 Crss
0.3 0 10
–0.1 –0.5 –1 –5 ---8 –40 0 50 100 150 0 –10 –20 –30 –40 –50

(TC=25°C)
–8 –10 40
ID (pulse) max
10
35 Natural Cooling
0µ
–5 All Circuits Operating

s
1m
10
s
ED
30
m
–6
IT
s
M
(1
LI
sh
W
N)
ot
25
ith
(O
PT (W)
S
In
IDR (A)
RD
ID (A)
fin
ite
–4 20
He
–1
V
at
0
sin
–1
15
V
–5 –0.5
0V
S=
–2 10
VG
Without Heatsink
5
0 –0.1 0
0 –1 –2 –3 –4 –5 –0.5 –1 –5 –10 –50 –100 0 50 100 150
VSD (V) Ta (°C)
VDS (V)
52
SLA5017

Ratings
VDSS 60 –60 V
VGSS ±10 20 V
ID ±5 4 A
EAS* 2 — mJ
PT
Tch 150 °C
Tstg –40 to +150 °C

1
Pch 2 8 9
3 7 10
Nch 4 6 11
5 12
N-ch P-ch N-ch
(VDS=10V)
10 –8 10
–10V
10V
8 8
4V –6
6 6
ID (A)
–7V
ID (A)
ID (A)
–4
3.5V
4 4
TC=–40°C
–6V
–2 25°C
VGS=3V
2 2 125°C
–5V
VGS=–4V
0 0 0
0 2 4 6 8 10 0 –2 –4 –6 –8 –10 0 1 2 3 4 5

N-ch P-ch P-ch
(VGS=–10V) (VDS=–10V)
0.3 0.6 –8
TC=–40°C
0.5 25°C
125°C
–6
4V
0.2 0.4
(Ω)
(Ω)
(ON)
ID (A)
(ON)
0.3 –4
RDS
VGS=10V
RDS
0.1 0.2
–2
0.1
0 0 –0
0 –2 –4 –6 –8 0 –2 –4 –6 –8 –10
0 1 2 3 4 5 6 7 8 9 10
ID (A) VGS (V)
ID (A)

N-ch P-ch ID=–4A
(ID=2.5A) VGS=–10V
0.4 1.0
0.8
0.3
4V
(Ω)
(Ω)
0.6
(ON)
(ON)
0.2 VGS=10V
RDS
RDS
0.4
0.1
0.2
0 0
–40 0 50 100 150 –40 0 50 100 150
TC (°C) TC (°C)
54
SLA5017
N channel P channel
0.17 0.22 Ω VGS=10V, ID=5A
RDS(ON) 0.38 0.55 Ω VGS=–10V, ID=–4A
0.25 0.30 Ω VGS=4V, ID=5A
N-ch P-ch N-ch
(VDS=10V) (VDS=–10V) (TC=25°C)
10 5 20
10
ID (pulse) max 0µ
10 s
5 ED 1m
IT 10 s
5 M m
°C LI s
0°
C
40 (1
Re (yfs) (S)
)
=– –4 N
Re (yfs) (S)
sh
5°
C C= °C (O
TC ot
12
T 25 R
D
S
)
5°
C
ID (A)
12
1 1
25°C
1
0.5
0.5
0.5
0.3 0.3 0.1

0.05 0.1 0.5 1 5 10 –0.1 –0.5 –1 –5 –8 0.5 1 5 10 50 100

1000 700 –10
500 ID (pulse) max
10
0µ
1m
500 Ciss –5
s
Ciss
ED
s
10
IT
Capacitance (pF)
M
Capacitance (pF)
m
LI
s
(1
N)
sh
(O
Coss
ot
S
RD
Coss
)
ID (A)
100
100 –1
50
50 –0.5
Crss
Crss
10 10 –0.1
0 10 20 30 40 50 0 –10 –20 –30 –40 –50 –0.5 –1 –5 –10 –50 –100

N-ch P-ch
10 –8 40
35 Natural Cooling
8
–6 30
W
ith
25
In
6
PT (W)
IDR (A)
fin
IDR (A)
ite
–10V
H
10V –4 20
ea
ts
in
k
4
4V 15
–2 –5V 10
VGS=0V
2
VGS=0V Without Heatsink
5
0 0 0
0 0.5 1.0 1.5 0 –1 –2 –3 –4 –5 0 50 100 150
55
SLA5018

Ratings
VDSS 60 –60 V
VGSS ±10 20 V
ID ±5 4 A
EAS* 2 — mJ
PT
Tch 150 °C
Tstg –40 to +150 °C

10 7
Pch 12 8
11 9
2 4
Nch 1 5
3 6
N-ch P-ch N-ch
–8
(VDS=10V)
10 10
–10V
10V
8 8
4V –6
6 –7V 6
ID (A)
ID (A)
ID (A)
–4
3.5V
4 4
TC=–40°C
–6V
–2 25°C
VGS=3V
2 2 125°C
–5V
VGS=–4V
0 0 0
0 2 4 6 8 10 0 –2 –4 –6 –8 –10 0 1 2 3 4 5

N-ch P-ch P-ch
(VGS=–10V) (VDS=–10V)
0.3 0.6 –8
TC=–40°C
25°C
0.5
125°C
–6
4V
0.2
(Ω)
0.4
(Ω)
(ON)
ID (A)
(ON)
0.3 –4
RDS
VGS=10V
RDS
0.1 0.2
–2
0.1
0 0 0
0 1 2 3 4 5 6 7 8 9 10 0 –2 –4 –6 –8 0 –2 –4 –6 –8 –10

N-ch P-ch ID=–2A
(ID=2.5A) VGS=–10V
0.4 0.8
0.3 4V 0.6
(Ω)
(Ω)
(ON)
(ON)
0.2 VGS=10V 0.4

RDS
RDS
0.1 0.2
0 0
–40 0 50 100 150 –40 0 50 100 150
TC (°C) TC (°C)
56
SLA5018
N channel P channel
0.17 0.22 Ω VGS=10V, ID=2.5A
RDS(ON) 0.38 0.55 Ω VGS=–10V, ID=–2A
0.25 0.30 Ω VGS=4V, ID=2.5A
N-ch P-ch N-ch
(VDS=10V) (VDS=–10V) (TC=25°C)
10 5 20
ID (pulse) max
10
0µ
10
s
ED
5
1m
10
IT
0° 0°
C C
s
5 m
M
4 4 s
=– =– LI (1
TC 5°
C TC °C
)
25 sh
N
Re (yfs) (S)
(O
12 ot
Re (yfs) (S)
5°C )
S
D
ID (A)
12
R
1 1
25°C
1
0.5
0.5
0.5
0.3 0.3 0.1

0.05 0.1 0.5 1 5 10 –0.1 –0.5 –1 –5 –8 0.5 1 5 10 50 100

1000 700 –10
500 ID (pulse) max 10
0µ
s
500 Ciss Ciss –5
1m
ED
s
10
IT
Capacitance (pF)
m
M
Capacitance (pF)
s
LI
(1
N)
sh
Coss
(O
ot
Coss
S
)
ID (A)
RD
100
100 –1
50
50 –0.5
Crss
Crss
10 10 –0.1
0 10 20 30 40 50 0 –10 –20 –30 –40 –50 –0.5 –1 –5 –10 –50 –100

N-ch P-ch
10 –8 40
35 Natural Cooling
8
–6 30
W
ith
In
25
fin
6
PT (W)
IDR (A)
ite
IDR (A)
–10V
ea
–4 20
ts
in
k
10V
4
15
–5V
4V –2 10
2
VGS=0V VGS=0V Without Heatsink
5
0 0 0
0 0.5 1.0 1.5 0 –1 –2 –3 –4 –5 0 50 100 150
57
SLA5021 N-channel

Specification
Symbol Ratings Unit Symbol min typ max Unit Conditins
ID(pulse) ±10 (PW≤1ms)
A VTH 1.0 2.0 V VDS=10V, ID=250µA
EAS* 60 mJ Re(yfs) 4 6 S VDS=10V, ID=5A
5 (Ta=25°C, with all circuits operating, without heatsink) W 0.18 0.19 Ω VGS=10V, ID=2.5A
PT RDS(ON)
35 (Tc=25°C, with all circuits operating, with infinite heatsink) W 0.19 0.25 Ω VGS=4V, ID=2.5A
θ j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W Ciss 880 pF VDS=25V, f=1.0MHz,
VISO 1000 (Between fin and lead pin, AC) Vrms ton 90 ns ID=5A, VDD 50V, VGS=5V,
Tstg –40 to +150 °C VSD 1.1 1.5 V ISD=5A, VGS=0V
* : VDD=20V, L=10mH, ID=3A, unclamped, see Fig. E on page 15. trr 500 ns ISD=±100mA
3 5 7 9 11
2 4 6 8 10
1 12
10
(VDS=10V)
10 0.25
10V
4.0V
8 8 0.20
3.5V
VGS=4V
(Ω)
6 6 0.15 VGS=10V
ID (A)
ID (A)
RDS(ON)
3.0V
4 4 TC=–40°C 0.10
25°C
125°C
2 2 0.05
VGS=2.5V
0 0 0
0 2 4 6 8 10 0 1 2 3 4 5 0 2 4 6 8 10

VGS=0V
(VDS=10V) (ID=2.5A) f=1MHz
20 0.4 3000
10
1000 Ciss
0.3
Capacitance (pF)
5
(Ω)
500
Re (yfs) (S)
VGS=4V
(ON)
0.2 Coss
RDS
TC=–40°C VGS=10V
25°C
100
1
125°C 0.1
Crss
50
0.5
0.3 0 20
0.05 0.1 0.5 1 5 10 –40 0 50 100 150 0 10 20 30 40 50

(TC=25°C) 40
10 20
ID (pulse) max 0µ Natural Cooling
35
10 s All Circuits Operating
8 D 1m
I TE 10 s 30
5 M
LI m
s
) (1
N
(O sh 25
W
D
S ot
ith
6
PT (W)
R )
IDR (A)
ID (A)
In
fin
20
ite
10V
He
1
at
sin
4 15
k
4V
0.5
10
2
Without Heatsink
VGS=0V 5
0 0
0.1 0 50 100 150
0 0.5 1.0 1.5 0.5 1 5 10 50 100
58
SLA5022 PNP Darlington + N-channel MOSFET
Absolute maximum ratings (Ta=25°C) Electrical characteristics (Sink : N channel MOSFET) (Ta=25°C)
Specification
VM 60 V V(BR)DSS 60 V ID=250µA, VGS=0V
IO ±6 (PW≤100ms) A IGSS ±500 nA VGS=±10V
IOP ±10 (PW≤1ms) A IDSS 250 µA VDS=60V, VGS=0V
VGSS ±10 V VTH 1.0 2.0 V VDS=10V, ID=250µA
IB –0.5 A Re(yfs) 3.1 4.6 S VDS=10V, ID=4A
5 (Ta=25°C) 0.17 0.22 VGS=10V, ID=4A
PT W RDS(ON) Ω
35 (Tc=25°C) 0.25 0.30 VGS=4V, ID=4A
θ j-a 25 °C/W Ciss 400 pF VDS=25V, f=1.0MHz,
θ j-c 3.57 °C/W Coss 160 pF VGS=0V
VISO 1000 (Between fin and lead pin, AC) Vrms ton 80 ns ID=4A, VDD=30V,
Tj 150 °C toff 50 ns VGS=5V
1
VM
R1 R2
2 8 9
3 7 10
OUT1 OUT2 OUT3
4 6 11
5 12
Characteristic curves (N-channel)

VDS-ID Characteristics (Typical) VGS-ID Temperature Characteristics (Typical) IDS-RDS(ON) Characteristics (Typical)
(VDS=10V)
10 10 0.3
10V
8 8
4V
4V
0.2
(Ω)
6 6
ID (A)
(ON)
ID (A)
3.5V VGS=10V
RDS
4 4
TC=–40°C 0.1
VGS=3V 25°C
2 2 125°C
0 0 0
0 2 4 6 8 10 0 1 2 3 4 5 0 1 2 3 4 5 6 7 8 9 10
ID-Re(yfs) Temperature Characteristics (Typical) TC-RDS(ON) Characteristics (Typical) VDS-Cpacitance Characteristics (Typical)
VGS=0V
(ID=2.5A) f=1MHz
10 0.4 1000
VDS=10V
500 Ciss
5
0.3
Capacitance (pF)
°C 4V
Re (yfs) (S)
40
5°
=– C
(Ω)
TC 12 Coss
(ON)
0.2 VGS=10V 100

RDS
25°C
1 50
0.1 Crss
0.5
0.3 0 10
0.05 0.1 0.5 1 5 10 –40 0 50 100 150 0 10 20 30 40 50
VSD-IDR Characteristics (Typical) Safe Operating Area (SOA)

(TC=25°C)
10 20
10
ID (pulse) max
0µ
s
10
8
1m
ED
10
5
IT
m
M
s
LI
(1
sh
)
N
(O
ot
)
IDR (A)
6
D
R
10V
ID (A)
1
4 4V
0.5
2 VGS=0V
0.1
0
0 0.5 1.0 1.5 0.5 1 5 10 50 100
VSD (V) VDS (V)
60
SLA5022
Electrical characteristics (Source: PNP transistor) (Ta=25°C)
Specification
ICBO –10 µA VCB=–60V

IEBO –1 –5 mA VEB=–6V
VCEO –60 V IC=–25mA
hFE 2000 5000 12000 VCE=–4V, IC=–4A
VCE(sat) –1.5 V
IC=–4A, IB=–10mA
VBE(sat) –2.0 V
VFEC 2.0 V IFEC=4A
trr 1.0 µs IF=±0.5A
ton 1.0 µs VCC –25V,
tstg 1.4 µs IC=–4A,
tf 0.6 µs IB1=–IB2=–10mA
fT 120 MHz VCE=–12V, IE=1A
Cob 150 pF VCB=–10V, f=1MHz
Characteristic curves (PNP)

(VCE=–4V) (VCE=–4V)
–12 20000 20000
IB=–10mA
mA
–5 –3mA
10000 10000
–10
–2mA typ
5000 5000
–8
IC (A)
hFE
hFE
–6 °C
–1mA 25 °C
=1 75 °C
Ta
1000 1000 25
0°
–4 C
–3
–0.5mA 500 500
–2
0 200 200
0 –2 –4 –6 –0.1 –0.5 –1 –5 –10 –0.1 –0.5 –1 –5 –10
(IC / IB=1000) (VCE=–4V)
–3 –3 –12
–10
–2 –2 –8
VCE (sat) (V)
VCE (sat) (V)
IC (A)
–6
IC=–8A
Ta=–30°C IC=–4A
–1 –1 –4
25°C
°C
75°C IC=–2A
125
C
T a=
25°C
125°C –2
°C
75°
–30
0 0 0
–0.1 –0.5 –1 –5 –10 –20 –0.3 –0.5 –1 –5 –10 –50 –100 –200 0 –1 –2 –3
θ j-a-PW Characteristics Safe Operating Area (SOA) PT-Ta Characteristics

20 –20 40
10

0µ
10 All Circuits Operating

1m
s
10
s
ms
–5 30
θch-c (°C / W)
5 25
IC (A)
W
ith
PT (W)
In
fin
20
ite
He
–1
at
sin
15
k
–0.5
10
1
Single Pulse Without Heatsink
Without Heatsink 5
Ta=25°C
0.5 –0.1 0
1 5 10 50 100 500 1000 –3 –5 –10 –50 –100 0 50 100 150
PW (mS) VCE (V) Ta (°C)
61
SLA5023 PNP Darlington + N-channel MOSFET
Absolute maximum ratings (Ta=25°C) Electrical characteristics (Sink: N-channel MOSFET) (Ta=25°C)
Specification
VM 100 V V(BR)DSS 100 V ID=250µA, VGS=0V
IO ±6 (PW≤100ms) A IGSS ±500 nA VGS=±10V
IOP ±8 (PW≤1ms) A IDSS 250 µA VDS=100V, VGS=0V
VGSS ±10 V VTH 1.0 2.0 V VDS=10V, ID=250µA
IB –0.5 A Re(yfs) 1.1 1.7 S VDS=10V, ID=4A
5 (Ta=25°C) 0.47 0.55 VGS=10V, ID=2A
PT W RDS(ON) Ω
35 (Tc=25°C) 0.60 0.78 VGS=4V, ID=2A
θ j-a 25 °C/W Ciss 230 pF VDS=25V, f=1.0MHz,
θ j-c 3.57 °C/W Coss 60 pF VGS=0V
VISO 1000 (Between fin and lead pin, AC) Vrms ton 60 ns ID=4A, VDD=50V,
Tj 150 °C toff 50 ns VGS=10V
1
VM
R1 R2
2 8 9
3 7 10
OUT1 OUT2 OUT3
4 6 11
R1: 3kΩ typ R2: 80Ω typ 5 12
Characteristic curves (N-channel)

VDS-ID Characteristics (Typical) VGS-ID Temperature Characteristics (Typical) IDS-RDS(ON) Characteristics (Typical)
8 8 0.8
10V VDS=10V
7
7
40°C
°C
125
6 0.6 VGS=4V
6 4.5V
TC=–
(Ω)
5
5
ID (A)
(ON)
VGS=10V
ID (A)
4V
4 0.4
4 25°C
RDS
3
3 3.5V
2 0.2
2
VGS=3V
1
1
0 0
0 2 4 6 8 0 1 2 3 4 5 6 7 8
0
0 2 4 6 8 10 VGS (V) ID (A)
VDS (V)
ID-Re(yfs) Temperature Characteristics (Typical) TC-RDS(ON) Characteristics (Typical) VDS-Cpacitance Characteristics (Typical)
VGS=0V
(ID=2A) f=1MHz
7 1.2 700
VDS=10V 500
5
Ciss
1.0
Capacitance (pF)
0.8
0°
C
(Ω)
4V
=4 S=
Re (yfs) (S)
100
5°
C VG Coss
TC
12
(ON)
V
0.6 S=
10
VG 50
RDS
1 0.4
25°C
Crss
0.2 10
0.5
0 5
0.3 –40 0 50 100 150 0 10 20 30 40 50
0.05 0.1 0.5 1 5 8 VDS (V)
TC (°C)
ID (A)
VSD-IDR Characteristics (Typical) Safe Operating Area (SOA) θ ch-c-PW Characteristics
(Tc=25°C)
8 10 20
I D (pulse) max
10
0µ
7 5 10
s
1m
10
s
m
ED
6
s
IT
(1
5
M
θ ch-c (°C / W)
sh
LI
ot
5
)
N)
(O
IDR (A)
S
ID (A)
RD
4 1
3
0.5 1
2
4V
10V 0.5
0V
1
S=
VG
0 0.1 0.2
0 0.5 1.0 1.5 0.5 1 5 10 50 100
0.1 0.5 1 5 10 50 100 500 1000 500010000
VSD (V) VDS (V) PW (mS)
62
SLA5023
Electrical characteristics (Source: PNP transistor) (Ta=25°C)
Specification
ICBO –10 µA VCB=–100V

IEBO –10 mA VEB=–6V
VCEO –100 V IC=–10mA
hFE 2000 5000 12000 VCE=–4V, IC=–3A
VCE(sat) –1.5 V
IC=–3A, IB=–6mA
VBE(sat) –2.2 V
VFEC 1.3 V IFEC=–1A
trr 2.0 µs IF=±100mA
ton 0.6 µs VCC –30V
tstg 1.6 µs IC=–3A
fT 90 MHz VCE=–12V, IE=1A
Characteristic curves (PNP)

–8 20000 20000
IB=–4mA
A
–7 –2m 10000 10000
typ
5000 5000
–1.2mA
–6
°C
25
–5 =1 75°C °C
–0.8mA Ta 25 °C
IC (A)
1000 0
1000 –3
hFE
hFE
–4
–0.6mA
500 500
–3
–2 –0.4mA
100
100
–1
50 50
0 30 30
0 –1 –2 –3 –4 –5 –0.03 –0.05 –0.1 –0.5 –1 –5 –8 –0.03 –0.05 –0.1 –0.5 –1 –5 –8
(IC / IB=1000) (VCE=–4V)
–3 –3 –8
–6
–2 –2
VCE (sat) (V)
VCE (sat) (V)
IC (A)
IC=–5A
–4
IC=–3A
Ta=–30°C
–1 25°C
75°C
–1 IC=–1A
–2
°C
125°C
75°C
125
25°C
–30°C
T a=
0 0
–0.3 –0.5 –1 –5 –10 0
–0.2 –0.5 –1 –5 –10 –50 –100 –500 0 –1 –2 –3
IC (A)
IB (mA) VBE (V)
θ j-a-PW Characteristics Safe Operating Area (SOA) PT-Ta Characteristics

20 –10 40
10
0µ

s
10
30
1m
10
s
m
s
θ ch-c (°C / W)
5 25
ith
–1
PT (W)
In
IC (A)
fin
ite
20
H
–0.5
ea
ts
in
k
15
10
–0.1
1
Without Heatsink
Single Pulse 5
Ta=25°C
0.5 –0.03 0
–3 –5 –10 –50 –100 0 50 100 150
1 5 10 50 100 500 1000
VCE (V) Ta (°C)
PW (mS)
63
SLA5024 P-channel
Absolute maximum ratings (Ta=25°C) (Ta=25°C)

Specification

PT
35 (Tc=25°C,with all circuits operating, with infinite heatsink) W RDS(ON) 0.38 0.55 Ω VGS=–10V, ID=–4A
VISO 1000 (Between finand lead pin, AC) Vrms ton 60 ns ID=–4A, VDD –30V, VGS=–10V,
3 6 7 10
1 5 8 12
2 4 9 11
(VDS=–10V) (VGS=–10V)
–8 –8 0.6
°C
40°C
–10V
125
TC=–
25°C 0.5
–6 –6
0.4
(Ω)
–7V
(ON)
ID (A)
ID (A)
–4 –4 0.3
RDS
0.2
–6V
–2 –2
VGS=–4V 0.1
–5V
0 0 0
0 –2 –4 –6 –8 –10 0 –2 –4 –6 –8 –10 0 –2 –4 –6 –8

ID=–4A VGS=0V
5 1.0 700
500
Ciss
0.8
Capacitance (pF)
°C
40
(Ω)
=– Coss
Re (yfs) (S)
TC °C 0.6
25 °C
5
(ON)
12 100
RDS
1
0.4
50
0.2 Crss
0.5
0.3 0 10
–0.1 –0.5 –1 –5 –8 –40 0 50 100 150 0 –10 –20 –30 –40 –50

–8
(TC=25°C)
–10 40
10
35 Natural Cooling
0
µs
–5
1m

s
D
10
E
–6 30
IT
m
M
s
LI
(1
W
sh
N)
ith
25
(O
ot
ID (A)
In
)
S
PT (W)
IDR (A)
RD
fin
0V
ite
–1
He
–4 –1 20
at
sin
V
k
–5 15
–0.5
0V
–2 10
S=
VG
Without Heatsink
5
0 –0.1 0
0 –1 –2 –3 –4 –5 –0.5 –1 –5 –10 –50 –100 0 50 100 150
64
SLA5029 N-channel

Specification
PT
θ j-c 3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/W ton 115 ns ID=4A, VDD 30V, VGS=10V,
Tch 150 °C VSD 1.1 1.5 V ISD=4A
3 5 7 9 11
2 4 6 8 10
1 12
65
SLA5031 N-channel

Specification
IF 5 (PW≤0.5ms, Du≤25%) A 0.17 0.22 Ω VGS=10V, ID=2.5A
IFSM 10 (PW≤10ms, Single pulse) A RDS(ON)
0.25 0.30 Ω VGS=4V, ID=2.5A
VR 120 V Ciss 400 pF VDS=25V, f=1.0MHz,
PT Coss 160 pF VGS=0V
ton 80 ns ID=5A, VDD 30V, VGS=5V,
Tch 150 °C
* : VDD=20V, L=1mH, ID=1.7A, unclamped, see Fig. E on page 15. Speciication
2 3 4 9 10 11
VR 120 V IR=10µA
VF 1.0 1.2 V IF=1A
IR 10 µA VR=120V
1 5 8 12 trr 100 ns IF=±100mA
6 7
(VDS=10V)
10 10 0.3
10V
8 8
4V
4V
0.2
(Ω)
6 6
ID (A)
ID (A)
(ON)
3.5V VGS=10V
RDS
4 4
TC=–40°C
0.1
25°C
VGS=3V
2 2 125°C
0 0 0
0 2 4 6 8 10 0 1 2 3 4 5 0 1 2 3 4 5 6 7 8 9 10

VGS=0V
10 0.4 1000
500 Ciss
5
0.3
0°
C 4V
Capacitance (pF)
4
=–
(Ω)
Re (yfs) (S)
5°
TC C
12 Coss
(ON)
VGS=10V
0.2 100
RDS
1 25°C 50
0.1 Crss
0.5
0.3 0 10
0.05 0.1 0.5 1 5 10 –40 0 50 100 150 0 10 20 30 40 50

(TC=25°C)
10 20 40

10 s
8 ED 1m
IT 10 s 30
5 M
LI m
s
) (1
W
N
(O sh
ith
D
S ot 25
In
)
IDR (A)
6 R
PT (W)
fin
ID (A)
ite
10V
He
20
at
sin
1
k
4 15
4V
0.5
10
2
VGS=0V Without Heatsink
5
0 0.1 0
0 0.5 1.0 1.5 0.5 1 5 10 50 100 0 50 100 150
66
SLA5037
N-channel

Specifications
5 (Ta=25°C, with all circuits operating, without heatsink) W 60 80 mΩ VGS=10V, ID=5A
PT RDS(ON)
40 (Tc=25°C,with all circuits operating, with infinite heatsink) W 75 95 mΩ VGS=4V, ID=5A
VISO 1000 (Between fin and lead pin, AC) Vrms td(on) 30 ns ID=5A,
Tch 150 °C tr 45 ns VDD 50V,
Tstg –40 to +150 °C td(off) 100 ns RL=10Ω, VGS=5V,
* : VDD=25V, L=3mH, ID=10A, unclamped, RG=50Ω, see Fig. E on page 15. tf 40 ns see Fig. 3 on page 16.
■Equivalent circuit diagram trr 300 ns ISD=±100mA
3 6 7 10
1 4 9 12
2 5 8 11
(VDS=10V)
10 10 100
3V
2.8V
8 8 80
4V VGS=4V
10V
(mΩ)
VGS=10V
6 6 60
ID (A)
2.6V
ID (A)
(ON)
4 TC=–40°C
RDS
4 40
2.4V 25°C
125°C
2 2 20
2.2V
VGS=2V
0 0 0
0 2 4 6 8 10 0 1 2 3 4 0 2 4 6 8 10
VGS=0V
(VDS=10V) (ID=5A) f=1MHz
30 150 5000
TC=–40°C
VGS=4V
10 25°C Ciss
Capacitance (pF)
(mΩ)
125°C 100
Re (yfs) (S)
1000
5
VGS=10V
(ON)
500
RDS
Coss
50
1
100 Crss
0.5
0.3 0 50
0.05 0.1 0.5 1 5 10 –40 0 50 100 150 0 10 20 30 40 50

(TC=25°C)
10 50 40
ID (pulse) max
10
35 Natural Cooling
0µ

s
D
8
E
IT
5V
30
M
1m
LI
VGS=0V
s
N)
10
(O
10 25
m
ith
S
RD
PT (W)
IDR (A)
6
In
(1
ID (A)
fin
sh
ite
20
ot
5
)
He
at
sin
4 15
k
10
2
1 Without Heatsink
5
0
0 0.5 0 50 100 150
0 0.5 1.0 1.5 0.5 1 5 10 50 100
67
N-channel
SLA5040 With built-in flywheel diode External dimensions A ••• SLA (12-pin)

Specification
IFSM 8 (PW≤10ms, Single pulse) A Ciss 180 pF VDS=25V, f=1.0MHz,
5 (Ta=25°C, with all circuits operating, without heatsink) W ton 40 ns ID=4A, VDD=50V, VGS=10V,
PT
Tch 150 °C ●Diode for flyback voltage absorption
Tstg –40 to +150 °C Symbol
Specification
Unit Conditions
min typ max
VR 120 V IR=10µA
■Equivalent circuit diagram VF 1.0 1.2 V IF=1A
2 3 4 9 10 11 IR 10 µA VR=120V
1 5 8 12
6 7
68
SLA5041
N-channel

Specification
VDSS V 200 V(BR)DSS 200 V ID=100µA, VGS=0V
VGSS V ±20 IGSS ±100 nA VGS=±20V
ID A ±10 IDSS 100 µA VDS=200V, VGS=0V
ID(pulse) ±40 (PW≤1ms, Du≤1%) A VTH 2.0 4.0 V VDS=10V, ID=1mA
5 (Ta=25°C, with all circuits operating, without heatsink) W RDS(ON) 130 175 mΩ VGS=10V, ID=5A
PT
θ j-c 3.13 (Junction-Case, Tc=25°C, with all circuits operating) °C/W td(on) 20 ns ID=5A,
VISO 1000 (Between fin and lead pin, AC) Vrms tr 25 ns VDD 100V,
Tch 150 °C td(off) 70 ns RL=20Ω, VGS=10V,
Tstg –40 to +150 °C tf 70 ns see Fig. 3 on page 16.
* : VDD=25V, L=2.1mH, ID=10A, unclamped, RG=50Ω, see Fig. E on page 15. VSD 1.0 1.5 V ISD=10A, VGS=0V
3 6 7 10
1 4 9 12
2 5 8 11
(VDS=10V) (VGS=10V)
10 10 200
5V
5.5V
10V
8 8
150
(mΩ)
6V
6 6
ID (A)
ID (A)
(ON)
4.5V 100
RDS
4 4
125°C
–40°C
50
2 2
VGS=4V
25°C
0 0 0
0 2 4 6 8 10 0 2 4 6 8 0 2 4 6 8 10

ID=5A VGS=0V
20 400 3000
10
1000
Ciss
300
Capacitance (pF)
0°
C
5 4 500
(mΩ)
=–
Re (yfs) (S)
TC
°C
25
=1
(ON)
TC Coss
200
TC=25°C
RDS
100
1 50
100 Crss
0.5
0.3 0 10
0.05 0.1 0.5 1 5 10 –40 0 50 100 150 0 10 20 30 40 50

10
(TC=25°C) 40
50 ID (pulse) max
ED 0µ
IT s 35 Natural Cooling
M
LI All Circuits Operating
8 10 N) 1m
(O
S s
RD 10 30
5 m
s
W
(1
sh
ith
ot 25
In
6 )
PT (W)
fin
IDR (A)
ID (A)
ite
1
He
20
at
0.5
sin
k
4
V 15
10
5.
S=
VGS=0V
VG 0.1 10
2
5
0 0.01 0
0 0.5 1.0 1.5 0.5 1 5 10 50 100 500 0 50 100 150
69
SLA5042 N-channel

Specification
ID(pulse) ±10 (PW≤1ms, Du≤1%) A VTH 1.0 2.0 V VDS=10V, ID=250µA
EAS* 70 mJ Re(yfs) 4 6 S VDS=10V, ID=2.5A
5 (Ta=25°C, with all circuits operating, without heatsink) W 130 185 mΩ VGS=10V, ID=2.5A
PT RDS(ON)
35 (Tc=25°C, with all circuits operating, with infinite heatsink) W 155 230 mΩ VGS=4V, ID=2.5A
θ j–a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W Ciss 740 pF VDS=10V, f=1.0MHz,
θ j–c 3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/W Coss 240 pF VGS=0V
VISO 1000 (Between fin and lead pin, AC) Vrms td(on) 20 ns ID=2.5A,
* : VDD=25V, L=4.2mH, ID=5A, unclamped, RG=50Ω,see Fig. E on page 15. tf 20 ns see Fig. 3 on page 16.
3 5 7 9 11
2 4 6 8 10
1 12
(VDS=10V)
5 5 200
3V
2.8V VGS=4V
4 4
4V 150
10V
(mΩ)
VGS=10V
ID (A)
3 3
ID (A)
2.6V
(ON)
100
RDS
2 2 TC=–40°C
2.4V 25°C
125°C 50
1 1
VGS=2.2V
0 0 0
0 2 4 6 8 10 0 1 2 3 4 0 1 2 3 4 5

VGS=0V
10 350 2000
TC=–40°C 1000
5 300
25°C
Ciss
(mΩ)
Capacitance (pF)
500
Re (yfs) (S)
125°C
250
VGS=4V
(ON)
200
RDS
VGS=10V Coss
1 100
150
50
0.5 100 Crss
0.3 50 20
0.05 0.1 0.5 1 5 –40 0 50 100 150 0 10 20 30 40 50

5 20 40
10
ID (pulse) max
0µ
35 Natural Cooling
10
s
10V All Circuits Operating

4
ED
1m
IT
10
30
s
5
M
m
LI
s
N)
(1
(O
sh
25
S
ot
ith
RD
3
ID (A)
PT (W)
)
IDR (A)
In
fin
5V
ite
20
He
at
1
sin
2 15
k
0.5
10
1 VGS= 0V Without Heatsink
5
TC=25°C
1-Circuit Operation
0.1 0
0 0 50 100 150
0 0.5 1.0 1.5 0.5 1 5 10 50 100 200
70
SLA5044
N-channel

Specification
5 (Ta=25°C, with all circuits operating, without heatsink) W RDS(ON) 200 250 mΩ VGS=10V, ID=5A
PT
θ j-c 3.13 (Junction-Case, Tc=25°C, with all circuits operating) °C/W td(on) 20 ns ID=5A,
Tch 150 °C td(off) 70 ns RL=20Ω, VGS=10V,
* : VDD=25V, L=2.2mH, ID=10A, unclamped, RG=50Ω,see Fig. E on page 15. VSD 1.0 1.5 V ISD=10A, VGS=0V
3 6 7 10
1 4 9 12
2 5 8 11
(VDS=10V) (VGS=10V)
10 10 300
10V
5V
250
8 8
6V
200
(mΩ)
6 4.5V 6
ID (A)
ID (A)
(ON)
150
RDS
4 4
TC=–40°C 100
TC=25°C
TC=125°C
2 VGS=4V 2
50
0 0 0
0 2 4 6 8 10 0 2 4 6 8 0 2 4 6 8 10

ID=5A VGS=0V
20 500 3000
10
400 1000
Ciss
Capacitance (pF)
(mΩ)
5 500
Re (yfs) (S)
300
(ON)
Coss
TC=–40°C
RDS
TC=25°C 200 100

TC=125°C
1 50
100 Crss
0.5
0.3 0 10
0.05 0.1 0.5 1 5 10 –40 0 50 100 150 0 10 20 30 40 50

ID (pulse) max
(TC=25°C)
10 50 40
ED 0µ
Natural Cooling
IT s 35
M
LI 1m All Circuits Operating
8 10 ) s
( ON
S 10 30
5 RD m
W
s
ith
(1
sh
In
ot 25
fin
6 )
ite
PT (W)
IDR (A)
ID (A)
He
1
at
20
sin
0.5
k
4 15
V
10
VGS=0V
5. 0.1
10
2 0.05
Without Heatsink
5
0 0.01 0
0 0.5 1.0 1.5 0.5 1 5 10 50 100 500 0 50 100 150
71
SLA5046 N-channel

Specification
VDSS V 200 V(BR)DSS 200 V ID=100µA, VGS=0V
VGSS V ±20 IGSS ±100 nA VGS=±20V
ID A ±7 IDSS 100 µA VDS=200V, VGS=0V
EAS* 55 mJ Re(yfs) 2.5 5.0 S VDS=10V, ID=3.5A
5 (Ta=25°C, with all circuits operating, without heatsink) W RDS(ON) 270 350 mΩ VGS=10V, ID=3.5A
PT
35 (Tc=25°C,with all circuits operating, with infinite heatsink) W Ciss 450 pF VDS=10V,
θ j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W Coss 280 pF f=1.0MHz,
θ j-c 3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/W Crss 120 pF VGS=0V
VISO 1000 (Between fin and lead pin, AC) Vrms td(on) 20 ns ID=3.5A,
Tstg –40 to +150 °C td(off) 55 ns RL=28.6Ω, VGS=10V,
* : VDD=25V, L=2.0mH, ID=7A, unclamped, RG=50Ω, see Fig. E on page 15. tf 75 ns see Fig. 3 on page 16.
3 5 7 9 11
2 4 6 8 10
1 12
(VDS=10V) (VGS=10V)
7 7 0.5
6V
6 6
10V
5.5V 0.4
5 5
(Ω)
0.3
ID (A)
ID (A)
4 4
RDS(ON)
3 5V 3
TC=–40°C 0.2
2 2
25°C
0.1
1 4.5V 1 125°C
VGS=4V
0 0 0
0 2 4 6 8 10 0 2 4 6 8 0 1 2 3 4 5 6 7

ID=3.5A VGS=0V
(VDS=10V) VGS=10V f=1MHZ
2000
10 1.0
1000
5 °C 0.8 500
– 40
c= °C
Capacitance (pF)
T 25 °C
5 Ciss
12
(Ω)
Re (yfs) (S)
0.6
(ON)
100
Coss
RDS
50
0.4
1
0.2 10
0.5
Crss
5
0.3 0 3
0.05 0.1 0.5 1 5 7 –40 0 50 100 150 0 10 20 30 40 50

(TC=25°C)
7 20 40
ID (pulse) max
10 0µ 35 Natural Cooling
6 1m s
s
5 30
5 10
m
s
(1
W
sh 25
ith
RDS (ON) LIMITED ot

PT (W)
IDR (A)
4
ID (A)
)
In
fin
ite
1 20
He
at
3
sin
k
0.5 15
2 V
10 10
5.
0V
VGS=
1 Without Heatsink
5
0.1
0 0.05 0
0 0.5 1.0 1.5 3 5 10 50 100 500 0 50 100 150
72
SLA5047 N-channel

Specification
Symbol Ratings Unit Symbol min typ max Unit Specification
PT RDS(ON)
3 6 9 12
1 4 7 10
2 5 8 11
(VDS=10V)
10 10 150
VGS=10V
3V
8 8
2.8V
100
(mΩ)
6 6
ID (A)
ID (A)
VGS=4V
(ON)
10V
2.6V 4
RDS
4
125°C
25°C
°C
50
TC=–40
2 2
2.4V
0 0 0
0 2 4 6 8 10 0 1 2 3 4 0 2 4 6 8 10

VGS=0V
50 200 8000
5000
TC=–40°C 150 Ciss

Capacitance (pF)
10
25°C
(mΩ)
Re (yfs) (S)
125°C 1000
5
4V
(ON)
100 S=
VG V
10 500
RDS
Coss
1 50
Crss
100
0.5
0.3 0 50
0.05 0.1 0.5 1 5 10 –40 0 50 100 150 0 10 20 30 40 50
ID (A) VDS (V)
TC (°C)
(TC=25°C)
10 50 ID (pulse) max 10 40
0µ
s With Silicone Grease
1m
10 10 All Circuits Operating
8 ms
(1
5 sh 30
RDS (ON) LIMITED ot)
W
ith
In
6 25
IDR (A)
fin
ID (A)
PT (W)
ite
1
5V
He
20
at
S=
sin
0.5
VG
4
0V
15
0.1
10
2
0.05
Without Heatsink
5
0 0.01 0
0 0.5 1.0 1.5 0.5 1 5 10 50 100 200 0 50 100 150
73
SLA5049 N-channel

Specification
5 (Ta=25°C, with all circuits operating, without heatsink) W RDS(ON) 400 500 mΩ VGS=10V, ID=3.5A
PT
θ j-c 3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/W td(on) 20 ns ID=3.5A,
Tch 150 °C td(off) 55 ns RL=28.6Ω, VGS=10V,
* : VDD=25V, L=2.0mH, ID=7A, unclamped, RG=50Ω, see Fig. E on page 15. VSD 1.0 1.5 V ISD=7A, VGS=0V
3 5 7 9 11
2 4 6 8 10
1 12
(VDS=10V) (VGS=10V)
7 7 0.5
5.5V
10V
6 6
6V
0.4
5 5
(Ω)
0.3
ID (A)
4 5V
ID (A)
4
(ON)
TC=–40°C
RDS
3 3 25°C
0.2
125°C
2 2
4.5V
0.1
1 1
VGS=4V
0 0 0
0 2 4 6 8 10 0 2 4 6 8 0 1 2 3 4 5 6 7

ID=3.5A VGS=0V
10 1.0 2000
1000
5 0.8 500 Ciss

°C
Capacitance (pF)
40 C
=– °
25 °C
(Ω)
TC
Re (yfs) (S)
5
12 0.6
100 Coss
(ON)
50
RDS
0.4
1
10
0.2
0.5 5
Crss
0.3 0 2
0.05 0.1 0.5 1 5 7 –40 0 50 100 150 0 10 20 30 40 50

7
(TC=25°C)
20 40
ID (pulse) max
6 10 10 35 Natural Cooling
0µ
5 1m 30
5 s
10
W
m
ith
s 25
IDR (A)
In
4 (1
PT (W)
fin
RDS (on) LIMITED sh

ID (A)
ite
ot
)
H
1 20
ea
ts
3
ink
0.5 15
V
2 10
5.
0V
10
VGS=
1 Without Heatsink
0.1 5
0 0.05 0
0 0.5 1.0 1.5 3 5 10 50 100 500 0 50 100 150
74
SLA5052
N-channel

Specification
EAS* 160 mJ Re(yfs) 8 13.5 S VDS=10V, ID=5A
PT RDS(ON)
θ j–a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W Ciss 1500 pF VDS=10V, f=1.0MHz,
θ j–c 3.13 (Junction-Case, Tc=25°C, with all circuits operating) °C/W Coss 360 pF VGS=0V
3 6 9 12
1 4 7 10
2 5 8 11
(VDS=10V)
10 10 150
VGS=10V
3.5V
8 3V 8
VGS=4V
100
(mΩ)
10V
6 6
ID (A)
ID (A)
TC=–40°C
(ON)
2.8V
25°C
RDS
4 4
125°C
50
2.6V
2 2
0 0 0
0 2 4 6 8 10 0 1 2 3 4 5 0 2 4 6 8 10

VGS=0V
50 300 5000
250
Ciss
Capacitance (pF)
TC=–40°C 1000
10
200
(mΩ)
Re (yfs) (S)
25°C
5 125°C 500
(ON)
150
S=
4V
VG V
10
RDS
Coss
100
1 100
50 Crss
0.5 50
0.3 0 30
0.05 0.1 0.5 1 5 10 –40 0 50 100 150 0 10 20 30 40 50
ID (A) VDS (V)
TC (°C)
10 ID (pulse) max
(TC=25°C)
50 40
10
0µ With Silicone Grease
1m s
8 10 m
s
(1
sh 30
5 ot
)
W
ith
6 RDS (ON) LIMITED 25

IDR (A)
In
PT (W)
ID (A)
fin
1
ite
5V
20
He
0.5
at
sin
4
V
15
VGS=0
0.1 10
2
0.05
Without Heatsink
5
0 0.01 0
0 0.5 1.0 1.5 0.5 1 5 10 50 100 200 0 50 100 150
75
SLA5054 N-channel
Absolute maximum ratings (Ta=25°C) ■Equivalent circuit diagram

Ratings
Symbol Unit
FET1 FET2 FET3
3 6 8 10 12 14
VDSS 150 V
VGSS +20, –10 V FET-1 FET-1 FET-2 FET-2 FET-3 FET-3
ID ±7 ±5 ±7 A
2 5 7 9 11 13
ID(pulse)*1 ±15 ±10 ±15 A
EAS*2 15 mJ
IAS 5 A
5 (Ta=25°C, with all circuits operating, without heatsink) W 1 15
PT Pin 4 : NC
Tch 150 °C
Tstg –40 to +150 °C
*1 : PW≤100µs, duty≤50%
*2 : VDD=25V, L=1.0mH, IL=5A unclamped, RG=50Ω, see Fig. E on page 15.

FET1 FET2 FET3
Symbol Specification Specification Specification
Unit Conditions Unit Conditions Unit Conditions
min typ max min typ max min typ max
V(BR)DSS 150 V ID=100µA, VGS=0V 150 V ID=100µA, VGS=0V 150 V ID=100µA, VGS=0V
IGSS 100 nA VGS=20V 100 nA VGS=20V 100 nA VGS=20V
IDSS 100 µA VDS=150V, VGS=0V 100 µA VDS=150V, VGS=0V 100 µA VDS=150V, VGS=0V
VTH 1.0 2.0 V VDS=10V, ID=250µA 1.0 2.0 V VDS=10V, ID=250µA 1.0 2.0 V VDS=10V, ID=250µA
Re(yfs) 7 12 S VDS=10V, ID=3.5A 3 5.5 S VDS=10V, ID=2.5A 4 9 S VDS=10V, ID=3.5A
80 105 mΩ VGS=10V, ID=3.5A 330 440 mΩ VGS=10V, ID=2.5A 150 200 mΩ VGS=10V, ID=3.5A
RDS(ON)
85 115 mΩ VGS=4V, ID=3.5A 370 480 mΩ VGS=4V, ID=2.5A 170 230 mΩ VGS=4V, ID=3.5A
Ciss 1900 pF VDS=10V, 380 pF VDS=10V, 870 pF VDS=10V,
Coss 630 pF f=1.0MHz, 95 pF f=1.0MHz, 320 pF f=1.0MHz,
Crss 420 pF VGS=0V 25 pF VGS=0V 210 pF VGS=0V
td(on) 35 ns ID=3.5A, 25 ns ID=2.5A, 25 ns ID=3.5A,
tr 70 ns VDD 70V, 50 ns VDD 70V, 55 ns VDD 70V,
td(off) 140 ns RL=20Ω, 55 ns RL=28Ω, 80 ns RL=20Ω,
tf 90 ns VGS=5V, see Fig.3 on page 16. 40 ns VGS=5V, see Fig.3 on page 16. 50 ns VGS=5V, see Fig.3 on page 16.
VSD 1.0 1.5 V ISD=7A, VGS=0V 1.1 1.5 V ISD=5A, VGS=0V 1.0 1.5 V ISD=7A, VGS=0V
trr 620 ns IF=±100mA 180 ns IF=±100mA 500 ns IF=±100mA
ID-VDS Characteristics (Typical) FET1 FET2 FET3
7 5 7
3.0V
10V
2.6V
10V
6 10V 6 4V
4V
4
5 5 2.8V
3 2.8V
ID (A)
4
ID (A)
4
ID (A)
2.4V
3 2.6V
3
2
2.6V
2
2
2.2V 2.4V
1 2.4V
1 1
VGS=2.0V VGS=2.2V
VGS=2.2V
0 0
0 2 4 6 8 10 0
0 2 4 6 8 10 0 2 4 6 8 10
VDS (V) VDS (V)
VDS (V)
ID-VGS Characteristics (Typical) FET1 FET2 FET3

5
(VDS=10V) (VDS=10V)
7 7
6 6
4
5 5
3
ID (A)
ID (A)
4
ID (A)
3 3
2
2 2
25°C
25° °C
°C
1
125
C
TC=1
25°
125
–40°C
C
–40°C
25°C
1
Tc=
1
Tc=
C
–40°
0 0 0
0 1 2 3 4 0 1 2 3 4 0 1 2 3 4
VGS (V) VGS (V) VGS (V)
RDS(ON)-ID Characteristics (Typical) FET1 FET2 FET3

100 500 200
4V
90 400 VGS=10V
4V
4V 150
(ON) (mΩ)
(mΩ)
(mΩ)
VGS=10V
80 VGS=10V 300
(ON)
(ON)
100
RDS
RDS
RDS
70 200
50
60 100
50 0 0
0 1 2 3 4 5 6 7 0 1 2 3 4 5 0 1 2 3 4 5 6 7
ID (A) ID (A) ID (A)
76
SLA5054
Re(yfs)-ID Characteristics (Typical) FET1 FET2 FET3
(VDS=10V) 10
(VDS=10V) 20
(VDS=10V)
100
10
5
0°
C °C
–4 40
°C C= =–
5° 5°
C
Re (yfs) (S)
0 C
–4 T
12 TC
= 12
Re (yfs) (S)
10
25°
TC C 5
Re (yfs) (S)
°C
125 25°C 25°C
1 1
1
0.5
0.5
0.1 0.3
0.05 0.1 0.5 1 5 7 0.3
0.05 0.1 0.5 1 5 0.05 0.1 0.5 1 5 7
ID (A)
ID (A) ID (A)
RDS(ON)-TC Characteristics (Typical) FET1 FET2 FET3

200 (ID=3.5A) 1.0
(ID=2.5A) 500 (ID=3.5A)
400
(mΩ)
4V
(ON) (mΩ)
(Ω)
4V
4V 300
V V
10 10
(ON)
(ON)
S= V S=
100 VG 0.5 10 VG
S=
VG
RDS
RDS
RDS
200
100
0 0 0
–40 0 50 100 150 –40 0 50 100 150 –40 0 50 100 150
TC (°C) TC (°C) TC (°C)
Capacitance-VDS Characteristics (Typical) FET1 VGS=0V FET2 VGS=0V FET3 VGS=0V

f=1MHz f=1MHz 5000
f=1MHz
10000 1000
500
Ciss
Capacitance (pF)
Capacitance (pF)
Capacitance (pF)
Ciss 1000
Ciss
1000
500
100
Coss
50
Coss
Coss
100
Crss
100 Crss
Crss
50
50 10 40
0 10 20 30 40 50 0 10 20 30 40 50 0 10 20 30 40 50
IDR-VSD Characteristics (Typical) FET1 FET2 FET3

7 5 7
6 6
4
5 5
10V
3
IDR (A)
IDR (A)
4
IDR (A)
4 4V
VGS=0V
V
10
4V
3
V
3
10
2
4V
VGS=0V VGS=0V
2 2
1
1 1
0 0 0
0 0.5 1.0 1.5 0 0.5 1.0 1.5 0 0.5 1.0 1.5
VSD (V) VSD (V) VSD (V)
Safe Operating Area (SOA) FET1 FET2 FET3

(TC=25°C) (TC=25°C)
20
10 20
(TC=25°C) 20
0µ 10
10 s ID (pulse) MAX 0µ
ID (pulse) MAX 1m 10 10 s
s 10 1m
5 10 0µ ID (pulse) MAX s
m 5 D s 5 10
RDS (on) LIMITED s TE 1m m
(1 I s
M
sh
ot LI 10
m
s RDS (on) LIMITED (1
sh
) n) s ot
(o (1 )
S sh
ID (A)
1 RD ot
ID (A)
ID (A)
1 )
0.5 0.5 0.5
0.1 1-Circuit Operation 0.1 1-Circuit Operation 0.1 1-Circuit Operation
0.05 0.05 0.05
0.01 0.01 0.01

0.5 1 5 10 50 100 200 0.5 1 5 10 50 100 200 0.5 1 5 10 50 100 200
PT-Ta Characteristics
40
35 Natural Cooling
30
25
W
ith
PT (W)
In
fin
ite
20
He
at
sin
15
k
10
Without Heatsink
5
0
0 50 100 150
Ta (°C)
77
SLA5055 N-channel

Ratings
Symbol Unit
FET 1 FET 2
VDSS 150 V
VGSS +20, –10 V
ID ±5 ±7 A
ID (pulse)* ±10 ±15 A
PT
Tch 150 °C
Tstg –40 to +150 °C
* : PW≤100µs, duty≤50%

3 5 7 9 11
FET-1 FET-2 FET-2 FET-2 FET-2

2 4 6 8 10
1 12
FET 1 FET 2 FET 1
5 7 5
(VDS=10V)
10V
10V 6 4V
4V
4 4
5 2.8V
3 2.8V
3
ID (A)
ID (A)
4
ID (A)
2.6V
2 3
2.6V 2
2
°C
1 2.4V
2.4V 1
125
C
–40°C
25°
Tc=
1
VGS=2.2V VGS=2.2V
0 0
0 2 4 6 8 10 0
0 2 4 6 8 10 0 1 2 3 4

FET 1 FET 2 FET 2
200 5
(VDS=10V)
500
4V
400 VGS=10V 4
4V 150
(mΩ)
VGS=10V
(mΩ)
300 3
ID (A)
(ON)
(ON)
100
RDS
2
RDS
200
°C
50
1
125
100
C
–40°C
25 °
Tc=
0 0 0
0 1 2 3 4 5 0 1 2 3 4 5 6 7 0 1 2 3 4

FET 1 FET 2
(ID=2.5A) 500 (ID=3.5A)
1.0
400
(mΩ)
4V
(Ω)
4V 300
V
10
(ON)
(ON)
V S=
0.5 10 VG
S=
VG
RDS
RDS
200
100
0 0
–40 0 50 100 150 -40 0 50 100 150
TC (°C) TC (°C)
78
SLA5055
FET 1 FET 2
V(BR)DSS 150 V ID=100µA, VGS=0V 150 V ID=100µA, VGS=0V
IGSS 100 nA VGS=20V 100 nA VGS=20V
IDSS 100 µA VDS=150V, VGS=0V 100 µA VDS=150V, VGS=0V
VTH 1.0 2.0 V VDS=10V, ID=250µA 1.0 2.0 V VDS=10V, ID=250µA
Re(yfs) 3 5.5 S VDS=10V, ID=2.5A 4 9 S VDS=10V, ID=3.5A
330 440 mΩ VGS=10V, ID=2.5A 150 200 mΩ VGS=10V, ID=3.5A
RDS(ON)
Ciss 380 pF VDS=10V, 870 pF VDS=10V,
Coss 95 pF f=1.0MHz, 320 pF f=1.0MHz,
Crss 25 pF VGS=0V 210 pF VGS=0V
td (on) 25 ns ID=2.5A, 25 ns ID=3.5A,
tr 50 ns VDD 70V, 55 ns VDD 70V,
td (off) 55 ns RL=28Ω, 80 ns RL=20Ω, VGS=5V,
tf 40 ns VGS=5V, see Fig.3 on page 16. 50 ns see Fig.3 on page 16.
VSD 1.1 1.5 V ISD=5A, VGS=0V 1.0 1.5 V ISD=7A, VGS=0V
trr 180 ns IF=±100mA 500 ns IF=±100mA
FET 1 (VDS=10V)
FET 2 FET 1
10 20
(VDS=10V) 20
(TC=25°C)
ID (pulse) MAX
10
10
10 0µ
5 5 s
0°
C
°C ED 1m
4 40 IT 10 s
=– =– LI
M
5°
C
5°
TC C m
n)
Re (yfs) (S)
12 TC s
Re (yfs) (S)
5 12 (o (1
S sh
RD ot
ID (A)
25°C 1 )
25°C
0.5
1
1 0.1
1-Circuit Operation
0.05
0.5
0.5
0.3 0.3 0.01

0.05 0.1 0.5 1 5 0.05 0.1 0.5 1 5 7 0.5 1 5 10 50 100 200

VGS=0V VGS=0V
FET 1 f=1MHz
FET 2 FET 2 (TC=25°C)
1000 5000
f=1MHz 20
10
0µ
10 s
500 1m
5 ID (pulse) MAX 10 s
Ciss m
s
Capacitance (pF)
(1
Capacitance (pF)
RDS (on) LIMITED sh

ot
1000 )
Ciss
ID (A)
100 500 0.5
Coss
50
0.1
1-Circuit Operation
Coss 0.05
100
Crss
Crss
50
10 40 0.01
0 10 20 30 40 50 0 10 20 30 40 50 0.5 1 5 10 50 100 200

FET 1 FET 2
5 7 40
4
30
5
25
W
3
IDR (A)
PT (W)
ith
4
IDR (A)
In
fin
V
20
ite
10
H
ea
4V
3
V
ts
10
2
in
4V 15
k
VGS=0V VGS=0V
2
10
1 Without Heatsink
1 5
0 0
0 0 50 100 150
0 0.5 1.0 1.5 0 0.5 1.0 1.5
79
SLA5057 N-channel

Ratings
Symbol Unit
FET 1 FET 2
VDSS 200 V
VGSS ±20 V
ID ±7 A
ID(pulse) * ±15 A
PT
Tch 150 °C
Tstg –40 to +150 °C
* : PW≤100µs, duty≤50%

3 6 8 10 12 14
FET-1 FET-1 FET-2 FET-2 FET-2 FET-2

2 5 7 9 11 13
1 Pin 4 : NC 15

FET 1 FET 2
IGSS ±100 nA VGS=±20V ±100 nA VGS=±20V
VTH 2.0 4.0 V VDS=10V, ID=1mA 2.0 4.0 V VDS=10V, ID=1mA
Re(yfs) 4.5 6.5 S VDS=10V, ID=3.5A 2.5 5.0 S VDS=10V, ID=3.5A
RDS(ON) 130 175 mΩ VGS=10V, ID=3.5A 270 350 mΩ VGS=10V, ID=3.5A
td (on) 20 ns ID=3.5A, 20 ns ID=3.5A,
td (off) 90 ns RL=28.6Ω, 55 ns RL=28.6Ω,
tf 70 ns VGS=10V, see Fig. 3 on page 16. 75 ns VGS=10V, see Fig. 3 on page 16.
80
SLA5058 N-channel

Specification
min typ max
VDSS 150 V
V(BR)DSS 150 V ID=100µA, VGS=0V
VGSS +20, –10 V
IGSS 100 nA VGS=20V
ID ±7A A
IDSS 100 µA VDS=150V, VGS=0V
ID (pulse) ±15 (PW≤1ms, Du≤1%) A
VTH 1.0 2.0 V VDS=10V, ID=250µA
EAS* 100 mJ Re(yfs) 4 9 S VDS=10V, ID=3.5A
5 (Ta=25°C, with all circuits operating, without heatsink) W 150 200 mΩ VGS=10V, ID=3.5A
PT RDS(ON)
35 (Tc=25°C, with all circuits operating, with infinite heatsink) W 170 230 mΩ VGS=4V, ID=3.5A
θ j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W Ciss 870 pF VDS=10V,
θ j-c 3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/W Coss 320 pF f=1.0MHz,
VISO 1000 (Between fin and lead pin, AC) Vrms Crss 210 pF VGS=0V
Tch 150 °C td(on) 25 ns ID=3.5A,
Tstg –40 to +150 °C tr 55 ns VDD 70V,
* : VDD=25V, L=3.4mH, ID=7A, unclamped, RG=50Ω, see Fig. E on page 15. td(off) 80 ns RL=20Ω,
tf 50 ns VGS=5V, see Fig. 3 in page 16.
3 5 7 9 11
2 4 6 8 10
1 12
7
(VDS=10V) 200
7
4V
10V
6 6
4V
VGS=10V
5 150
5 2.8V
RDS (ON) (mΩ)
ID (A)
4
ID (A)
4
100
3
2.6V
3
2
2 50
°C
C
2.4V
25°
125
–40°C
1
Tc=
1
VGS=2.2V
0
0 1 2 3 4 0
0
0 1 2 3 4 5 6 7
0 2 4 6 8 10 VGS (V)
ID (A)
VDS (V)
Re (yfs)-ID Characteristics (Typical) RDS (ON)-TC Characteristics (Typical) Capacitance-VDS Characteristics (Typical)
VGS=0V
(VDS=10V) 500 (ID=3.5A) f=1MHz
20 5000
10
400
°C
40
Capacitance (pF)
=–
5°
C
Re (yfs) (S)
TC 12 1000
(mΩ)
5
4V Ciss
300
25°C V
10
(ON)
S= 500
VG
RDS
200
1
Coss
100 100
0.5
Crss
50
0.3 0 40
0.05 0.1 0.5 1 5 7 –40 0 50 100 150 0 10 20 30 40 50

7 20 40
10
10 s 35 Natural Cooling
6 1m
ID (pulse) MAX s All Circuits Operating
5 10
m
s( 30
RDS (on) LIMITED 1s
5 ho
t)
25
W
ID (A)
PT (W)
ith
IDR (A)
4
In
fin
0.5 20
V
ite
10
He
4V
at
3
sin
15
k
VGS=0V 0.1 TC=25°C

2 1-Circuit Operation 10
0.05
Without Heatsink
1 5
0
0 0.01 0 50 100 150
0 0.5 1.0 1.5 0.5 1 5 10 50 100 200
81
3-phase motor drive External dimensions B ••• SLA (12-pin)

Ratings
VDSS 60 –60 V
VGSS ±20 20 V
ID 4 –4 A
ID(pulse) 8 (PW≤1ms, Duty≤25%) –8 (PW≤1ms, Duty≤25%) A
PT
Tch 150 °C
Tstg –40 to +150 °C

1
2 8 9
3 7 10
4 6 11
5 12
N-ch P-ch N-ch
(VDS=10V)
8 –8 8
10V
4.5V –10V Ta=40°C
25°C
6 –6 –4.5V 6
4.0V 125°C
ID (A)
ID (A)
ID (A)
–4.0V
4 –4 4
3.5V
–3.6V
2 –2 –3.2V 2
VGS=3.0V
VGS=–2.7V
0 0 0
0 2 4 6 8 10 0 –2 –4 –6 –8 –10 0 2 4 6 8 10

N-ch P-ch P-ch
(Ta=25°C) (Ta=25°C) (VDS=–10V)
0.6 0.6 –8
Tc= –40°C
VGS= –4V
0.5 0.5
25°C
–6
VGS=4V
(Ω)
(Ω)
0.4 0.4 125°C

VGS= –10V
(ON)
(ON)
ID (A)
VGS=10V
0.3 0.3 –4
RDS
RDS
0.2 0.2
–2
0.1 0.1
0 0 0
0 2 4 6 8 0 –2 –4 –6 –8 0 –2 –4 –6 –8 –10

ID=2A ID= –2A
N-ch P-ch
VGS=4V VGS=–10V
0.8 0.8
0.7 0.7
(Ω)
(Ω)
0.6 0.6
(ON)
(ON)
0.5 0.5
RDS
RDS
0.4 0.4
0.3 0.3
0.2 0.2
–40 –25 0 25 50 75 100 125 150 –40 –25 0 25 50 75 100 125 150
Tc (°C) Tc (°C)
82
SLA5059
N channel P channel
IGSS ±10 µA VGS=±20V 10 µA VGS= 20V
Re(yfs) 2.5 S VDS=10V, ID=2A 3 S VDS=–10V, ID=–2A
RDS(ON) 0.55 Ω VGS=4V, ID=2A 0.55 Ω VGS=–10V, ID=–2A
Ciss 150 pF 320 pF
VDS=10V, f=1.0MHz, VDS=–10V, f=1.0MHz,
Coss 70 pF 130 pF
VGS=0V VGS=0V
Crss 15 pF 40 pF
td(on) 12 ns 20 ns
ID=2A, VDD 20V, ID=–2A, VDD –20V,
tr 40 ns 95 ns
RL=10Ω, VGS=5V, RL=10Ω, VGS=–5V,
td(off) 40 ns 70 ns
see Fig. 3 on page 16. see Fig. 4 on page 16.
tf 25 ns 60 ns
VSD 1.2 V ISD=4A, VGS=0V –1.1 V ISD=–4A, VGS=0V
ISD=2A, VGS=0V, ISD=–2A, VGS=0V,
trr 75 ns 75 ns
di/dt=100A/µs di/dt=100A/µs
N-ch (VDS=10V) P-ch (VDS=–10V) N-ch (Tc=25°C)
10 10 10
100µs
1ms
10ms
Re (yfs) (S)
RDS LIMITED
Re (yfs) (S)
(on)
ID (A)
Tc= –40°C
1 1 Tc=–40°C 1
25°C
25°C
125°C
125°C
0.1 0.1 0.1

0.005 0.1 1 8 –0.005 –0.1 –1 –8 1 10 100

VGS=0V VGS=0V
N-ch P-ch f=1MHz P-ch (Tc=25°C)
f=1MHz
1000 1000 –10
100µs
Ciss 1ms
Capacitance (pF)
Ciss
10ms
Capacitance (pF)
100 100 Coss RDS (ON) LIMITED

ID (A)
Coss
–1
Crss
10 10
Crss
1 1 –0.1
0 10 20 30 40 50 0 –10 –20 –30 –40 –50 –1 –10 –100

N-ch P-ch
8 –8 40
35 Natural Cooling
6 –6 30
25
IDR (A)
IDR (A)
PT (W)
W
ith
4 –4 20 In
fin
ite
VGS=10V He
VGS=–10V at
15 sin
k
4V –4V
2 –2 10
0V 0V Without Heatsink
5
0 0 0
0.0 0.5 1.0 1.5 2.0 0.0 –0.5 –1.0 –1.5 –2.0 0 50 100 150
83

Ratings
VDSS 60 –60 V
VGSS ±20 ±20 V
ID 6 –6 A
ID(pulse) 10 (PW≤1ms, duty≤25%) –10 (PW≤1ms, duty≤25%) A
,
PT
Tch 150 °C
Tstg –40 to +150 °C

1
2 8 9
3 7 10
4 6 11
5 12
N-ch (Ta=25°C) P-ch (Ta=25°C) N-ch (VDS=10V)
10 ---10 10
4V
–4 V
3.7V
–10V
–3.7V
8 ---8 8
10V
3.5V
–3.5V
6 3.3V ---6 6
ID (A)
–3.3V
ID (A)
ID (A)
Ta=125°C
4 3.0V ---4 4
–3.0V
25°C
2.7V –40°C
2 ---2 –2.7V 2
VGS=2.5V
VGS=–2.5V
0 0 0
0 2 4 6 8 10 0 ---2 ---4 ---6 ---8 ---10 0 1 2 3 4 5

N-ch (Ta=25°C) P-ch (Ta=25°C) P-ch (VDS=---10V)
0.30 0.30 ---10
---9
0.25 0.25 ---8
---7
0.20 VGS=–4V
0.20
RDS (ON) (Ω)
(ON) (Ω)
---6
ID (A)
4V
0.15 0.15 –10V ---5
VGS=10V
RDS
---4 Ta=–40°C
0.10 0.10 ---3

25°C
---2
0.05 0.05 –40°C
---1
0 0 0
0 1 2 3 4 5 6 7 8 9 10 0 ---2 ---4 ---6 ---8 ---10 0 ---1 ---2 ---3 ---4 ---5

N-ch (ID=3A) P-ch (ID=---3A)
0.35 0.35
0.30 0.30
0.25 0.25
4V –4
V
RDS (ON) (Ω)
RDS (ON) (Ω)
S=
0.20 0.20 VG
1 0V
GS
= V
V –10
0.15 0.15
0.10 0.10
0.05 0.05
0 0
---40 0 50 100 150 ---40 0 50 100 150
TC (°C) TC (°C)
84
SLA5060
N channel P channel
IGSS ±10 µA VGS=±20V ±10 µA VGS=±20V
Ciss 320 pF 790 pF
Coss 160 pF 310 pF
VGS=0V VGS=0V
Crss 35 pF 90 pF
td(on) 16 ns 40 ns
ID=3A, VDD=20V, ID=–3A, VDD=20V,
tr 65 ns 110 ns
RL=6.67Ω, VGS=5V, RL=6.67Ω, VGS=–5V,
td(off) 70 ns 160 ns
tf 45 ns 80 ns
trr 65 ns 85 ns
TC=25°C
N-ch (VDS=10V) P-ch (VDS=---10V) N-ch SINGLE PULSE
10 10 20
Ta=–40°C
10
0µ
10
s
Ta=–40°C
ED
1m
IT
Re (yfs) (S)
M
Re (yfs) (S)
s
LI
10
25°C 25°C
ID (A)
N)
m
(O
s
S
1
RD
1
125°C
125°C 1
0.1 0.1 0.1

0.05 0.1 1 10 –0.05 –0.1 –1 –10 0.1 1 10 100

VGS=0V VGS=0V TC=25°C
N-ch N-ch(Ta=25°C) f=1MHz P-ch P-ch
(Ta=25°C) f=1MHz P-ch SINGLE PULSE
2000 –20
2000
100µs
1000 –10
Ciss
1m
10
s
m
s
Capacitance (pF)
ED
Capacitance (pF)
IT
1000
M
LI
ID (A)
Coss
N)
(O
S
Ciss
RD
100 –1
100 Coss Crss
Crss
10 10 –0.1
0 10 20 30 40 50 0 –10 –20 –30 –40 –50 –0.1 –1 –10 –100

N-ch (Ta=25°C) ---10
P-ch (Ta=25°C)
10 40
With Silicon Grease
35 Natural Cooling
8 ---8
30
0V
4V
–1
25
W
6 ---6
S=
ith
PT (W)
IDR (A)
IDR (A)
VG
0V
In
fin
20
ite
0V
H
–1
V
ea
–4
S=
---4
ts
4
VG
in
15
k
0V
10
2 ---2
Without Heatsink
5
0 0 0
0 0.5 1.0 1.5 0 ---0.5 ---1.0 ---1.5 0 50 100 150
85
SLA5061 N-channel+P-channel

Ratings
VDSS 60 –60 V
VGSS ±20 ±20 V
ID 10 –6 A
PT
Tch 150 °C
Tstg –40 to +150 °C

1
2 8 9
3 7 10
4 6 11
5 12
15 –15 15
4.0V
14 –14 14
10V
–4.0V
–10V
12 –12 12
10 –10 10
3.5V
–3.5V
ID (A)
ID (A)
ID (A)
8 –8 8
3.3V –3.3V
6 –6 6
TC=125°C
3.0V –4 –3.0V
4 4 25°C
–40°C
2 –2 VGS=–2.7V 2
VGS=2.7V
0 0 0
0 2 4 6 8 10 0 –2 –4 –6 –8 –10 0 1 2 3 4 5

Ta=25°C Ta=25°C
N-ch VGS=4V P-ch VGS=–10V –15
P-ch (VDS=–10V)
0.20 0.20
–14
0.18 0.18
0.16 0.16 –12
0.14 0.14 –10

RDS (ON) (Ω)
RDS (ON) (Ω)
0.12 0.12
ID (A)
–8
0.10 0.10
0.08 –6
0.08
TC=125°C
0.06 0.06 –4
0.04 0.04 25°C

–2 –40°C
0.02 0.02
0 0
0 0 –1 –2 –3 –4 –5
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 0 –1 –2 –3 –4 –5 –6 –7 –8 –9 –10–11 –12–13–14–15

ID=5A ID=–5A
N-ch VGS=4V
P-ch VGS=–10V
0.20
0.20
0.18
0.18
0.16
0.16
0.14
0.14
RDS (ON) (Ω)
0.12
RDS (ON) (Ω)
0.12
0.10 0.10
0.08 0.08
0.06 0.06
0.04 0.04
0.02 0.02
0.00 0.00
---40 0 50 100 150 ---40 0 50 100 150
TC (°C) TC (°C)
86
SLA5061
N channel P channel
IGSS ±10 µA VGS=±20V 10 µA VGS=±20V
Re(yfs) 8 S VDS=10V, ID=5A 8.7 S VDS=–10V, ID=–5A
Ciss 460 pF 1200 pF
Coss 225 pF 440 pF
VGS=0V VGS=0V
Crss 50 pF 120 pF
td(on) 25 ns 50 ns
ID=5A, VDD 20V, ID=–5A, VDD 20V,
tr 110 ns 170 ns
RL=4Ω, VGS=5V, RL=4Ω, VGS=–5V
tf 55 ns 100 ns
ISD=5A, VGS=0V ISD=–5A, VGS=0V
trr 75 ns 100 ns
TC=25°C
N-ch (VDS=10V) P-ch (VDS=–10V) N-ch SINGLE PULSE
20 20
20 100µs
10 10 10
1m
ED
s
IT
10
Re (yfs) (S)
Re (yfs) (S)
m
LI
s
TC=–40°C
N)
(O
ID (A)
TC=–40°C 25°C
S
RD
1 25°C
1 125°C 1
125°C
0.1 0.1
0.05 0.1 1 10 20 0.1
–0.05 –0.1 –1 –10 –20 0.1 1 10 100
ID (A) ID (A)
VDS (V)
N-ch N-ch
(Ta=25°C) f=1MHz P-ch P-ch P-ch SINGLE PULSE
(Ta=25°C) f=1MHz –20
5000 5000 100ms
–10
1m
s
10
Ciss
ED
m
Capacitance (pF)
Capacitance (pF)
1000 1000
s
IT
M
LI
Ciss
N)
(O
ID (A)
Coss
S
RD
Coss –1
100 100
Crss
Crss
10 10 –0.1
0 10 20 30 40 50 0 –10 –20 –30 –40 –50 –0.1 –1 –10 –100

15 N-ch (Ta=25°C) P-ch (Ta=25°C)
–15 40
14 –14 With Silicon Grease
–13
12 –12
11 –11 30
10 –10
W
V
ith
10
9 25
4V
–9
S=
In
IDR (A)
PT (W)
IDR (A)
fin
VG
8 0V
ite
–8
0V
–1 20
He
7 –7 S=
at
VG
sin
V
6 –6
–4
15
5 –5
0V
4 –4 10
3 –3
2 Without Heatsink
–2 5
1 –1
0 0 0
0 0.5 1.0 1.5 0 –0.5 –1.0 –1.5 0 50 100 150
87
SLA5064 N-channel+P-channel

Ratings
VDSS 60 –60 V
VGSS ±20 ±20 V
ID 10 –10 A
PT
Tch 150 °C
Tstg –40 to +150 °C

5 12
4 6 11
3 7 10
2 8 9
15 –15 15
4.0V
14 –14 14
10V
–4.0V
–10V
12 –12 12
10 –10 10
3.5V –3.5V
ID (A)
ID (A)
ID (A)
8 –8 8
3.3V –3.3V
6 –6 6
TC=125°C
3.0V –4 –3.0V
4 4 25°C
–40°C
–2 VGS=–2.7V
2 VGS=2.7V 2
0 0 0
0 2 4 6 8 10 0 –2 –4 –6 –8 –10 0 1 2 3 4 5

Ta=25°C Ta=25°C
N-ch VGS=4V P-ch VGS=–10V –15
P-ch (VDS=10V)
0.20 0.20
–14
0.18 0.18
0.16 0.16 –12
0.14 0.14 –10

(ON) (Ω)
(ON) (Ω)
0.12 0.12
ID (A)
–8
0.10 0.10
RDS
RDS
0.08 0.08 –6
TC=125°C
0.06 0.06 –4
0.04 0.04 25°C
–2 –40°C
0.02 0.02
0.00 0.00 0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 0 –1 –2 –3 –4 –5 –6 –7 –8 –9 –10–11 –12–13–14–15 0 –1 –2 –3 –4 –5

ID=5A ID=–5A
N-ch VGS=4V P-ch VGS=–10V
0.20 0.20
0.18 0.18
0.16 0.16
0.14 0.14
(ON) (Ω)
(ON) (Ω)
0.12 0.12
0.10 0.10
RDS
RDS
0.08 0.08
0.06 0.06
0.04 0.04
0.02 0.02
0.00 0.00
---40 0 50 100 150 ---40 0 50 100 150
TC (°C) TC (°C)
88
SLA5064
N channel P channel
IGSS ±10 µA VGS=±20V 10 µA VGS=±20V
Re(yfs) 8 S VDS=10V, ID=5A 8.7 S VDS=–10V, ID=–5A
Ciss 460 pF 1200 pF
Coss 225 pF 440 pF
VGS=0V VGS=0V
Crss 50 pF 120 pF
td(on) 25 ns 50 ns
ID=5A, VDD 20V, ID=–5A, VDD 20V,
tr 110 ns 170 ns
tf 55 ns 100 ns
trr 75 ns 100 ns
TC=25°C
N-ch (VDS=10V) 20
P-ch (VDS=–10V) N-ch SINGLE PULSE
20 20 100µs
10 10 10
1m
ED
s
IT
10
M
Re (yfs) (S)
Re (yfs) (S)
m
LI
s
TC=–40°C
N)
(O
S
ID(A)
TC=–40°C 25°C
RD
1 25°C 1 125°C 1
125°C
0.1 0.1 0.1

0.05 0.1 1 10 20 –0.05 –0.1 –1 –10 –20 0.1 1 10 100

N-ch N-ch
(Ta=25°C) f=1MHz P-ch P-ch
(Ta=25°C) f=1MHz P-ch SINGLE PULSE
5000 5000 –20
100µs
–10
1m
s
10
Ciss
ED
m
Capacitance (pF)
Capacitance (pF)
1000 1000
s
IT
M
LI
Ciss
N)
(O
ID (A)
Coss
S
RD
Coss –1
100 100
Crss
Crss
10 10 –0.1
0 10 20 30 40 50 0 –10 –20 –30 –40 –50 –0.1 –1 –10 –100

15
N-ch (Ta=25°C)
–15
P-ch (Ta=25°C) All Circuits Operating
40
14 –14
35
13 –13
12 –12 30
11 –11
30
10 –10
V
10
9 –9 25 W
4V
S=
PT (W)
IDR (A)
IDR (A)
ith
VG
8 –8 0V In
–1 fin
0V
25 ite
7 –7 S=
VG He
V
6 –6 20 at
–4
sin
k
5 –5
0V
15
4 –4
3 –3 10
2 –2 Without Heatsink
5
1 –1
0 0 0
0 0.5 1.0 1.5 0 –0.5 –1.0 –1.5 0 50 100 150
89
SLA5065 N-channel

Specification
ID 7 A IDSS 100 µA VDS=60V, VGS=0V
ID(pulse) 15 (PW≤100µs, Du≤1%) A VTH 1.0 2.0 V VDS=10V, ID=250µA
EAS* 60 mJ Re(yfs) 6 S VDS=10V, ID=3.5A
IAS 7 A RDS(ON) 0.1 Ω VGS=10V, ID=3.5A
4.8 (Ta=25°C, with all circuits operating, without heatsink) Ciss 660 pF VDS=10V,
PT W
35 (Tc=25°C, with all circuits operating, with infinite heatsink) Coss 310 pF f=1.0MHz,
θ j-a 26 (Junction-Air, Ta=25°C, with all circuits operating) °C/W Crss 75 pF VGS=0V
* : VDD=20V, L=20mH, ID=2A, unclamped, RG=50Ω, see Fig. E on page 15. VSD 1.1 V ISD=7A, VGS=0V
■Equivalent circuit diagram trr 80 ns ISD=3.5A, di/dt=100A/µA
5 10
4 9
3 7
2 6
1 8
Pins 11, 12, 13, 14, 15 : NC
(Ta=25°C) (VDS=10V) (Ta=25°C)
15 0.15
15
3.8V 14
10V
4.0V
12
3.5V
10 10 0.10
(ON) (Ω)
VGS=4V
3.3V
ID (A)
ID (A)
8
10V
RDS
6 TC=125°C
3 3.0V 0.05
25°C
4
–40°C
2.7V 2
VGS=2.5V
0 0 0
0 2 4 6 8 10 0 1 2 3 4 5 0 5 10 15

VGS=0V
20
(VDS=10V) 0.20 (ID=3.5A) (Ta=25°C) f=1MHz
5000
10 0.18
TC= –40°C
0.16
1000
Capacitance (pF)
0.14 Ciss
(ON) (Ω)
Re (yfs) (S)
25°C 0.12 =4V

V GS
10V
0.10
RDS
125°C Coss
1
0.08
100
0.06
Crss
0.04
0.02
0.1 0 10
0.05 0.1 1 10 20 –40 0 50 100 150 0 10 20 30 40 50

TC=25°C
(Ta=25°C) SINGLE PULSE All Circuits Operating
15 20 40
100µs
10
1m
V
ED
10
s
4V
S=
IT
10
30
VG
m
LI
0V
s
N)
10
(O
W
S
ith
RD
IDR (A)
PT (W)
In
ID (A)
fin
ite
20
He
1
a ts
in
k
5
10
Without Heatsink
0 0.1 0
0 0.5 1.0 1.5 0.1 1 10 100 0 50 100 150
90
SLA5068 N-channel

Specification
ID(pulse) 15 (PW≤100µs, Du≤1%) A VTH 1.0 2.0 V VDS=10V, ID=250µA
EAS* 60 mJ Re(yfs) 6 S VDS=10V, ID=3.5A
IAS 7 A RDS(ON) 0.1 Ω VGS=10V, ID=3.5A
5 (Ta=25°C, with all circuits operating, without heatsink) Ciss 660 pF VDS=10V,
PT W
50 (Tc=25°C,with all circuits operating, with infinite heatsink) Coss 310 pF f=1.0MHz,
θ j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W Crss 75 pF VGS=0V
* : VDD=20V, L=20mH, ID=2A, unclamped, RG=50Ω, see Fig. E on page 15. VSD 1.1 V ISD=7A, VGS=0V
■Equivalent circuit diagram trr 80 ns ISD=3.5A, di/dt=100A/µA
5 10 12
4 11 13
3 7 15
2 6 14
1 Pins 8, 9 : NC
(Ta=25°C) (VDS=10V) 0.15 (Ta=25°C)
15 15
3.8V
14
10V
4.0V
12
3.5V
10 10 0.10
(ON) (Ω)
VGS=4V
3.3V
ID (A)
ID (A)
8
10V
RDS
6 TC=125°C
3 3.0V 0.05
25°C
4
2.7V –40°C
2
VGS=2.5V
0 0 0
0 2 4 6 8 10 0 1 2 3 4 5 0 5 10 15

VGS=0V
20
(VDS=10V) 0.20 (ID=3.5A) (Ta=25°C) f=1MHz
5000
0.18
10 TC= –40°C
0.16
1000
Capacitance (pF)
0.14 Ciss
(ON) (Ω)
Re (yfs) (S)
25°C 0.12 GS
=4V
V
10V
0.10
RDS
125°C Coss
1
0.08
100
0.06
Crss
0.04
0.02
0.1 0 10
0.05 0.1 1 10 20 –40 0 50 100 150 0 10 20 30 40 50

TC=25°C
(Ta=25°C) 20
SINGLE PULSE All Circuits Operating
15 60
100µs
10
1m
V
50
ED
10
s
4V
S=
IT
10
VG
m
LI
0V
40
N)
10
(O
W
S
RD
ith
IDR (A)
PT (W)
ID (A)
In
fin
30 ite
H
1 ea
ts
in
k
5 20
10
Without Heatsink
0 0.1 0
0 0.5 1.0 1.5 0.1 1 10 100 0 50 100 150
91
SLA5070 N-channel

Ratings
Symbol Unit
FET 1 FET 2
VDSS 150 V
VGSS +20, –10 V
ID ±7 A
ID(pulse) ±15 (PW≤100µs, duty≤1%) A
EAS* 100 mJ
PT
Tch 150 °C
Tstg –40 to +150 °C
* : VDD=25V, L=3.4mH, ID=7A, unclamped, RG=50Ω, see Fig. E on page 15.

3 6 8 10 12 14
FET-1 FET-1 FET-2 FET-2 FET-2 FET-2

2 5 7 9 11 13
1 15
Pin 4 : NC
FET 1 FET 2 FET 1 (VDS=10V)
7 7 7
3.0V
10V
2.6V
10V
6 6 4V 6
5 5 2.8V 5
ID (A)
ID (A)
°C
4 4
ID (A)
2.4V 4
25°C
Tc=125
–40°C
3 2.6V
3 3
2
2 2
2.2V 2.4V
1 1 1
VGS=2.2V
VGS=2.0V
0 0
0 2 4 6 8 10 0
0 2 4 6 8 10 0 1 2 3 4
VDS (V) VDS (V)
VGS (V)

FET 1 FET 2 FET 2 (VDS=10V)
100 200 7
4V
6
90 VGS=10V
4V
150
5
(ON) (mΩ)
(ON) (mΩ)
80 VGS=10V
ID (A)
4
100
RDS
RDS
3
70
2
50
60
°C
C
25°
125
–40°C
1
Tc=
50 0 0
0 1 2 3 4 5 6 7 0 1 2 3 4
0 1 2 3 4 5 6 7
ID (A)
ID (A) VGS (V)

200
FET 1 (ID=3.5A) FET 2 (ID=3.5A)
500
400
4V
(ON) (mΩ)
(ON) (mΩ)
4V
300
V
10 10
V
S=
100 VG S=
VG
RDS
RDS
200
100
0 0
–40 0 50 100 150 –40 0 50 100 150
TC (°C) TC (°C)
92
SLA5070
FET 1 FET 2
IGSS ±100 nA VGS=20V, –10V ±100 nA VGS=20V, –10V
Re(yfs) 7 12 S VDS=10V, ID=3.5A 4 9 S VDS=10V, ID=3.5A
RDS(ON)
td (on) 35 ns ID=3.5A 25 ns ID=3.5A,
td(off) 140 ns RL=20Ω 80 ns RL=20Ω,
tf 90 ns VGS=5V, see Fig.3 on page 16. 50 ns VGS=5V, see Fig.3 on page 16.
FET 1 (VDS=10V) FET 2 (VDS=10V)
FET 1 (TC=25°C)
100 20 20
10
0µ
10 s
ID (pulse) MAX 1m
10 s
5 10
m
°C RDS (on) LIMITED s(
°C 40 1s
40 =– ho
5°
C
=–
Re (yfs) (S)
TC t)
Re (yfs) (S)
10 12
25°
TC C 5
°C
ID (A)
125 1
25°C
0.5
1
0.1 1-Circuit Operation
1
0.05
0.5
0.1
0.05 0.1 0.5 1 5 7 0.3 0.01
ID (A) 0.05 0.1 0.5 1 5 7 0.5 1 5 10 50 100 200
ID (A) VDS (V)

VGS=0V VGS=0V
FET 1 f=1MHz FET 2 f=1MHz
FET 2 (TC=25°C)
10000 5000 20
10
0µ
10 s
1m
m
s(
Capacitance (pF)
RDS (on) LIMITED 1s

Capacitance (pF)
Ciss ho
1000 t)
Ciss
ID (A)
1000
500 0.5
Coss 0.1 1-Circuit Operation
Crss Coss 0.05

100
100
Crss
50 50
0 10 20 30 40 50 40 0.01
0 10 20 30 40 50 0.5 1 5 10 50 100 200
VDS (V) VDS (V)
VDS (V)

FET 1 FET 2 60
7 7
With Silicon Grease
Natural Cooling
6 6 All Circuits Operating
5 5 40
10V
W
ith
PT (W)
In
IDR (A)
4
fin
IDR (A)
4 4V
ite
VGS=0V
V
He
10
at
sin
4V
3 3
k
20
VGS=0V
2 2
1 1 Without Heatsink
5
0
0 0 0 50 100 150
0 0.5 1.0 1.5 0 0.5 1.0 1.5 Ta (°C)
VSD (V) VSD (V)
93
SLA5072 N-channel
3-phase DC motor 100V AC direct drive External dimensions A ••• SLA (15-pin)

Specification
ID(pulse) 15 (PW≤1ms, Du≤1%) A VTH 2.0 4.0 V VDS=10V, ID=1mA
IAS 7 A RDS(ON) 400 500 mΩ VGS=10V, ID=3.5A
5 (Ta=25°C, with all circuits operating, without heatsink) Ciss 450 pF VDS=10V, f=1.0MHz,
PT W
40 (Tc=25°C, with all circuits operating, with infinite heatsink) Coss 280 pF VGS=0V
θ j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W td(on) 20 ns ID=3.5A,
θ j-c 3.125 (Junction-Case, Tc=25°C, with all circuits operating) °C/W tr 30 ns VDD=100V,
* : VDD=25V, L=2mH, ID=7A, unclamped, RG=50Ω, see Fig. E on page 15. VSD 1.0 1.5 V ISD=7A, VGS=0V
trr 75 ns ISD=3.5A, VGS=0V, di/dt=100A/µs
5 10 12
4 11 13
3 7 15
2 6 14
1 Pins 8,9 : NC
6V (VDS=10V) (VGS=10V)
7 7 0.5
5.5V
10V
6 6
0.4
5 5
(ON) (Ω)
5V 0.3
ID (A)
4 4
ID (A)
TC=–40°C
RDS
3 3
25°C 0.2
2 2 125°C
4.5V
0.1
1 1
VGS=4V
0 0 0
0 2 4 6 8 10 0 2 4 6 8 0 1 2 3 4 5 6 7

ID=3.5A VGS=0V
10 1.0 2000
1000
5 0.8
500 Ciss
°C
40
Capacitance (pF)
=– 5°C
TC 2 °C
Re (yfs) (S)
(ON) (Ω)
5
12 0.6
100 Coss
50
RDS
0.4
1
0.2 10
0.5
5 Crss
0.3 0 2
0.05 0.1 0.5 1 5 7 –40 0 50 100 150 0 10 20 30 40 50

(VGS=0V) D (TC=25°C)
7 20 ITE ID (pulse) max 40
N)
LIM
(O With Silicon Grease
10 RDS 10 35 Natural Cooling
6 0m
5
5 1m 30
s
10
W
ms
ith
(1 25
IDR (A)
In
4 sh
PT (W)
ID (A)
fin
ot)
1
ite
20
He
at
3
sin
0.5
k
15
2
10
0.1
1 Without Heatsink
5
0.05
0 0.03 0
0 0.5 1.0 1.5 3 5 10 50 100 300 0 50 100 150
94
SLA5073 N-channel

Specification
ID(pulse) 8 (PW≤1ms, Du≤25%) A VTH 1.0 2.0 V VDS=10V, ID=250µA
5 (Ta=25°C, with all circuits operating, without heatsink) Re(yfs) 5.5 S VDS=10V, ID=3A
PT W
30 (Tc=25°C, with all circuits operating, with infinite heatsink) RDS(ON) 0.3 Ω VGS=4V, ID=3A
Tch 150 °C td(on) 16 ns ID=3A,
td(off) 70 ns RL=6.67Ω, VGS=5V,
tf 45 ns see Fig. 3 on page 16.
VSD 1.2 V ISD=4A, VGS=0V
■Equivalent circuit diagram trr 65 ns ISD=3A, VGS=0V, di/dt=100A/µs
5 10 15
4 11 14
3 7 12
2 6 11
1 8 13
Ta=25°C
(Ta=25°C) (VDS=10V) VGS=4V
8 8 0.30
4V
10V
3.8V
7 7
0.25
6 6
3.5V 0.20
(ON) (Ω)
5 5
ID (A)
ID (A)
3.3V
4 4 0.15
RDS
3 3
3.0V
0.10
2 2 TC=125°C
25°C 0.05
VGS=2.7V
1 1
–40°C
0 0 0
0 2 4 6 8 10 0 1 2 3 4 5 0 1 2 3 4 5 6 7 8

ID=3A VGS=0V
(VDS=10V) VGS=4V (Ta=25°C) f=1MHz
20 0.35 1000
10 0.30
°C
–40 Ciss
Ta=
Capacitance (pF)
0.25
Re (yfs) (S)
(ON) (Ω)
25°C
0.20
125°C 100
RDS
1 0.15
Coss
0.10
0.05 Crss
0.1 0.00 10
0.05 0.1 1 10 –40 0 50 100 150 0 10 20 30 40 50

(Ta=25°C) 10 (TC=25°C, SINGLE PULSE)
8 100µs 40
With Silicon Grease
1m

s
10
6
m
30
s
ED
V
5 25
10
4V
IT
S=
W
IDR (A)
PT (W)
LIM
ID (A)
ith
VG
0V
In
4 1 20 fin
N)
ite
(O
He
S
RD
at
3 sin
15 k
2 10
Without Heatsink
1 5
0 0.1 0
0 0.5 1.0 1.5 0.1 1 10 100 0 50 100 150
95
SLA5074 N-channel

Specification
4.8 (Ta=25°C, with all circuits operating, without heatsink) Re(yfs) 5.5 S VDS=10V, ID=3A
PT W
25 (Tc=25°C,with all circuits operating, with infinite heatsink) RDS(ON) 0.3 Ω VGS=4V, ID=3A
θ j-c 5 (Junction-Case, Tc=25°C, with all circuits operating) °C/W Coss 160 pF f=1.0MHz,
td(off) 70 ns RL=6.67Ω, VGS=5V,
■Equivalent circuit diagram trr 65 ns ISD=3A, VGS=0V, di/dt=100A/µs
5 10
4 9
3 7
2 6
1 8 Pins 11, 12, 13, 14, 15 : NC
Ta=25°C
8 8 0.30
4V
10V
3.8V
7 7
0.25
6 6
3.5V 0.20
(ON) (Ω)
5 5
ID (A)
ID (A)
3.3V 4
4 0.15
RDS
3 3
3.0V
0.10
2 2 TC=125°C
25°C 0.05
VGS=2.7V 1
1 –40°C
0 0 0
0 2 4 6 8 10 0 1 2 3 4 5 0 1 2 3 4 5 6 7 8
ID=3A VGS=0V
20 0.35 1000
10 0.30
°C
–40 Ciss
Ta=
Capacitance (pF)
0.25
Re (yfs) (S)
(ON) (Ω)
25°C
0.20
125°C 100
RDS
1 0.15
Coss
0.10
0.05 Crss
0.1 0.00 10
0.05 0.1 1 10 –40 0 50 100 150 0 10 20 30 40 50

(Ta=25°C) 10 (TC=25°C, SINGLE PULSE) All Circuits Operating
8 30
100µs
7
1m
25
s
10
6
m
s
W
20 ith
V
ED
5
10
In
4V
fin
IT
S=
IDR (A)
PT (W)
ite
LIM
ID (A)
VG
0V
H
4 1 ea
15 ts
N)
in
(O
k
S
RD
3
10
2
Without Heatsink
5
1
0 0.1 0
0 0.5 1.0 1.5 0.1 1 10 100 0 50 100 150
96
SLA5075 N-channel
3-phase DC motor 200V AC direct drive External dimensions A ••• SLA (15-pin)

Specification
5 (Ta=25°C, with all circuits operating, without heatsink) RDS(ON) 1.05 1.4 Ω VGS=10V, ID=2.5A
PT W
60 (Tc=25°C, with all circuits operating, with infinite heatsink) Ciss 770 pF VDS=10V, f=1.0MHz,
trr 75 ns ISD=2.5A, di/dt=100A/µs
5 10 12
4 11 13
3 7 15
2 6 14
1 Pins 8, 9 : NC
(VDS=20V) (VGS=10V)
5 5 2.0
5V
4 4
10V
1.5
(ON) (Ω)
3 3
ID (A)
ID (A)
4.5V
1.0
RDS
2 2
TC=125°C
25°C
0.5
–40°C
1 4V 1
VGS=3.5V
0 0 0
0 5 10 15 20 0 2 4 6 0 1 2 3 4 5

ID=2.5A VGS=0V
10 3.0 2000
5 1000
2.5 Ciss
°C
40
=– °C
Ta 25 C 500
5°
Capacitance (pF)
12 2.0
Re (yfs) (S)
(ON) (Ω)
1.5
RDS
100
1 Coss
1.0
50
0.5
0.5
Crss
0.2 0 10
0.05 0.1 0.5 1 5 –40 0 50 100 150 0 10 20 30 40 50

(Ta=25°C) (TC=25°C) 60
5 20
ID(pulse) max With Silicon Grease
10 Natural Cooling
4
5 ED
IT
M
LI 10
N)
0µ 40
(O s
W
S
ith
3 RD 1m
PT (W)
IDR (A)
In
s
ID (A)
fin
ite
1
He
at
sin
2 0.5
k
20
1
5
0
0 0.05 0 50 100 150
0 0.5 1.0 1.5 3 5 10 50 100 600
VSD (V) Ta (°C)
VDS (V)
97
SLA5077 N-channel

Specification
VGSS +20, –10 V IGSS ±100 nA VGS=20V, –10V
ID(pulse) ±40 (PW≤100µs, duty≤1%) A VTH 1.0 2.0 V VDS=10V, ID=250µA
IAS 10 A 150 200 mΩ VGS=10V, ID=5A
RDS(ON)
5 (Ta=25°C, with all circuits operating, without heatsink) 170 230 mΩ VGS=4V, ID=5A
PT W
50 (Tc=25°C,with all circuits operating, with infinite heatsink) Ciss 870 pF VDS=10V,
3 6 7 10
1 4 9 12
2 5 8 11
7 7
(VDS=10V) 200
4V
10V
6 4V 6
VGS=10V
150
5 2.8V 5
(ON) (mΩ)
4
ID (A)
ID (A)
4
100
RDS
2.6V 3
3
2 2
2.4V
50
°C
C
25 °
125
–40°C
1 1
Tc=
VGS=2.2V
0 0 0
0 2 4 6 8 10 0 1 2 3 4 0 1 2 3 4 5 6 7

VGS=0V
20
(VDS=10V) 500 (ID=3.5A) 5000
f=1MHz
10
°C
400
40
Capacitance (pF)
=–
5°
C
Re (yfs) (S)
TC 12
5 1000
(ON) (mΩ)
4V Ciss
300
25°C
1 0V
S= 500
VG
RDS
200
1
Coss
100 100
0.5
Crss
50
0.3 0 40
0.05 0.1 0.5 1 5 7 –40 0 50 100 150 0 10 20 30 40 50

20
(TC=25°C) All Circuits Operating
7 60
10
0µ
10 s
6 1m
5 ID (pulse) MAX 10 s 50
m
s
(1
5 RDS (on) LIMITED sh
ot
)
40 W
ith
In
IDR (A)
4
PT (W)
ID (A)
fin
ite
0.5
V
30 H
10
ea
ts
4V
3 in
k
VGS=0V 1-Circuit Operation 20

2 0.1
0.05
1 10
Without Heatsink
0 0.01 0
0 0.5 1.0 1.5 0.5 1 5 10 50 100 200 0 50 100 150
98
SLA5079 P-channel

Specification
ID –10 A IDSS –100 µA VDS=–60V, VGS=0V
ID(pulse) –15 (PW≤1ms, duty≤25%) A VTH –1.0 –2.0 V VDS=–10V, ID=–250µA
4.5 (Ta=25°C, with all circuits operating, without heatsink) Re(yfs) 8.7 S VDS=–10V, ID=–5A
PT W
30 (Tc=25°C,with all circuits operating, with infinite heatsink) RDS(ON) 0.14 Ω VGS=–10V, ID=–5A
θ j-a 27.8 (Junction-Air, Ta=25°C, with all circuits operating) °C/W Ciss 1200 pF VDS=–10V,
Tch 150 °C td(on) 50 ns ID=–5A, VDD –20V,
Tstg –40 to +150 °C tr 170 ns RL=4Ω, VGS=–5V,
td(off) 180 ns RG=50Ω,
VSD –1.25 V ISD=–10A, VGS=0V
trr 100 ns ISD=–5A, di/dt=100A/µs
1 5 12
2 6 11
3 7 10
Ta=25°C
(Ta=25°C) (VDS=–10V) VGS=–10V
–15 –15 0.20
5°C
–14 –14
–10V
TC=12
°C
–4.0V
–40
–12 –12 0.16
–10 –10
(ON) (Ω)
25°C 0.12
ID (A)
–3.5V
ID (A)
–8 –8
RDS
–3.3V
–6 –6 0.08
–4 –3.0V –4
0.04
VGS=–2.7V –2
–2
0 0
0 0 –1 –2 –3 –4 –5 0 –2 –4 –6 –8 –10 –12 –14 –15
0 –2 –4 –6 –8 –10
VGS (V) ID (A)
VDS (V)
ID=–5A VGS=0V
(VDS=–10V) 0.20
VGS=–10V (Ta=25°C) f=1MHz
–20 3000
0.18
–10 Ciss
0°C 0.16 1000
–4
Tc=
Capacitance (pF)
0.14
Re (yfs) (S)
(ON) (Ω)
25°C
0.12 Coss
125°C
0.10
RDS
–1
0.08 100
Crss
0.06
0.04
0.02
–0.1 0 10
–0.1 –1 –10 –20 –40 0 50 100 150 –0 –10 –20 –30 –40 –50

(Ta=25°C) –20 (TC=25°C, SINGLE PULSE) All Circuits Operating
–15 100µs
40
–14
1m
–10 35
s
10
–12
m
s
30
ED
IT
M
–10
LI
25
N)
IDR (A)
PT (W)
(O
ID (A)
W
S
–8
0V
RD
20 ith
–1
In
V
fin
S=
–4
–1 ite
VG
0V
–6 He
15 at
sin
k
–4 10
–2 5 Without Heatsink
0 –0.1 0
0.0 –0.5 –1.0 –1.5 –0.1 –1 –10 –100 0 50 100 150
99
SLA5080 N-channel

Specification
VGSS ±20 V IGSS ±10 µA VGS=±20V
4.5 (Ta=25°C, with all circuits operating, without heatsink) Re(yfs) 8.0 S VDS=10V, ID=5A
PT W
30 (Tc=25°C,with all circuits operating, with infinite heatsink) RDS(ON) 0.14 Ω VGS=4V, ID=5A
θ j-a 27.8 (Junction-Air, Ta=25°C, with all circuits operating) °C/W Ciss 460 pF VDS=10V,
Tch 150 °C td(on) 25 ns ID=5A, VDD 20V,
Tstg –40 to +150 °C tr 110 ns RL=4Ω,
td(off) 90 ns VGS=5V,
trr 75 ns ISD=5A, di/dt=100A/µs
3 7 10
2 6 11
1 5 12
Ta=25°C
15 15 0.20
4.0V
14 14
10V
12 12 0.16
10 10
(ON) (Ω)
3.5V 0.12
ID (A)
ID (A)
8 8
3.3V
RDS
6 6 TC=25°C 0.08
4 3.0V 4
25°C 0.04
2 VGS=2.7V 2
–40°C
0 0 0
0 2 4 6 8 10 0 1 2 3 4 5 0 2 4 6 8 10 12 14 15
ID=5A VGS=0V
20 0.20 2000
0.18
10 1000
TC=–40°C
0.16
Ciss
Capacitance (pF)
0.14
Re (yfs) (S)
(ON) (Ω)
25°C
0.12
125°C 0.10 Coss

RDS
1 100
0.08
0.06
0.04 Crss
0.02
0.1 0 10
0.05 0.1 1 10 20 –40 0 50 100 150 0 10 20 30 40 50

(Ta=25°C) 20
15 40
10
0µ
s
10 35
1m
s
12
10
m
s
30
V
ED
10
S=
IT
4V
IM
VG
0V
)L
9 25
ID (A)
N
IDR (A)
PT (W)
(O
S
W
RD
20 ith
In
1 fin
ite
6 He
15 at
sin
k
10
3
5 Without Heatsink
TC=25°C
Single Pulse
0 0.1 0
0 0.5 1.0 1.5 0.1 1 10 100 0 50 100 150
100
SLA5081 N-channel

Ratings
Symbol Unit
FET 1 FET 2
VDSS 150 V
VGSS +20, –10 V
ID ±7 A
ID (pulse)*1 ±15 A
EAS*2 100 mJ
PT
Tch 150 °C
Tstg –40 to +150 °C
*1 : PW≤100µs, duty≤1%
*2 : VDD=25V, L=3.4mH, ID=7A, unclamped, RG=50Ω, see Fig. E on page 15.
3 8 10 12 14
FET1 FET2 FET2 FET2 FET2

2 7 9 11 13
1 15 Pins 4, 5, 6 : NC
FET 1 FET 2 FET 1
7 7 7
3.0V
10V
2.6V
10V
6 6 4V 6
5 5 2.8V 5
ID (A)
ID (A)
4 4
ID (A)
4
2.4V
3 2.6V
3 3
2 2
25°C
2
2.2V 2.4V
TC=1
25°C
1 1 1
C
VGS=2.2V
–40°
VGS=2.0V
0 0 0
0 2 4 6 8 10 0 2 4 6 8 10 0 1 2 3 4

FET 1 FET 2 FET 2
200 7
(VDS=10V)
100
4V
6
90 VGS=10V
4V
150
5
(ON) (mΩ)
(ON) (mΩ)
80 VGS=10V
ID (A)
4
100
RDS
3
RDS
70
2
50
°C
60
C
25°
125
–40°C
1
Tc=
50 0 0
0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7 0 1 2 3 4

200 FET 1 (ID=3.5A) FET 2 (ID=3.5A)
500
400
4V
(ON) (mΩ)
(ON) (mΩ)
4V
300
V
10 10
V
S=
100 VG S=
VG
RDS
RDS
200
100
0 0
–40 0 50 100 150 –40 0 50 100 150
TC (°C) TC (°C)
102
SLA5081
FET 1 FET 2
IGSS ±100 nA VGS=20V, –10V ±100 nA VGS=20V, –10V
Re(yfs) 7 12 S VDS=10V, ID=3.5A 4 9 S VDS=10V, ID=3.5A
RDS(ON)
Ciss 1600 pF VDS=10V, 870 pF VDS=10V
Coss 380 pF f=1.0MHz, 320 pF f=1.0MHz
td (on) 35 ns ID=3.5A, 25 ns ID=3.5A
tr 70 ns VDD 70V, 55 ns VDD 70V
td (off) 125 ns RL=20Ω, 80 ns RL=20Ω
FET 1 FET 2 FET 1
(VDS=10V) (VDS=10V) 20
(TC=25°C)
100 20 10
0µ
10 s
ID (pulse) MAX 1m
10 s
5 10
m
°C RDS (on) LIMITED s(
40 1s
°C =– ho
5°
40 C
Re (yfs) (S)
– TC t)
C= 12
Re (yfs) (S)
10 5
25°
T C
°C 1
125
ID (A)
25°C
0.5
1 1-Circuit Operation
1 0.1
0.05
0.5
0.1 0.01
0.05 0.1 1 7 0.3
0.05 0.1 0.5 1 5 7 0.5 1 5 10 50 100 200
ID (A) VDS (V)
ID (A)

FET 1 VGS=0V FET 2 VGS=0V FET 2
10000 5000 20
10
0µ
10 s
1m
m
s(
Capacitance (pF)
RDS (on) LIMITED 1s

Capacitance (pF)
ho
Ciss 1000 t)
Ciss
ID (A)
1000
500 0.5
Coss 0.1 1-Circuit Operation
Coss 0.05
Crss 100
100
Crss
50
50 40 0.01
0 10 20 30 40 50 0 10 20 30 40 50 0.5 1 5 10 50 100 200

FET 1 FET 2 All Circuits Operating
7 7 50
6 6
40
5 5
10V
IDR (A)
4
IDR (A)
4 4V 30
PT (W)
VGS=0V
W
V
ith
10
In
4V
3
fin
3
ite
20
He
VGS=0V
at
s
2 2
in
k
1 1 10
Without Heatsink
0 0
0 0.5 1.0 1.5 0 0.5 1.0 1.5 0
VSD (V) VSD (V) 0 50 100 150
Ta (°C)
103
SLA5085 N-channel

Specification
ID(pulse) 10 (PW≤1ms, duty≤25%) A VTH 1.0 2.0 V VDS=10V, ID=250µA
5 (Ta=25°C, with all circuits operating, without heatsink) RDS(ON) 0.16 0.22 Ω VGS=4V, ID=3A
PT W
30 (Tc=25°C, with all circuits operating, with infinite heatsink) Ciss 320 pF VDS=10V,
VISO 1000 (Between fin and lead pin, AC) Vrms td(on) 16 ns ID=3A, VDD 20V,
Tch 150 °C tr 65 ns RL=6.67Ω,
Tstg –40 to +150 °C td(off) 70 ns VGS=5V,
* : VDD=40V, L=20mH, ID=1A, unclamped, RG=50Ω, see Fig. E on page 15. tf 45 ns see Fig. 3 on page 16.
trr 65 ns ISD=3A, VGS=0V, di/dt=100A/µs
3 5 7 9 11
2 4 6 8 10
1 12
(Ta=25°C) (VDS=10V) (Ta=25°C)
10 10 0.30
4V
3.7V
10V
0.25
8 8
3.5V
0.20
(ON) (Ω)
4V
6 3.3V 6
ID (A)
ID (A)
0.15
VGS=10V
RDS
4 3.0V 4 Ta=125°C
0.10
25°C
2.7V 2
2 0.05
–40°C
VGS=2.5V
0 0 0
0 2 4 6 8 10 0 1 2 3 4 5 0 2 4 6 8 10

VGS=0V
(VDS=10V) (ID=3A) (Ta=25°C) f=1MHz
50 0.35 1000
0.30
10 Ciss
0.25
Capacitance (pF)
°C
(ON) (Ω)
V
Re (yfs) (S)
–40 S=
10
Ta= 0.20 VG
10V
100 Coss
RDS
0.15
1 25°C
125°C 0.10
0.05
Crss
0.1 0.00 10
0.05 0.1 1 10 –40 0 50 100 150 0 10 20 30 40 50

(Ta=25°C) All Circuits Operating
10 20 40
10
10 35
0µ
s
8
30
1m
10
ED
s
V
m
10
IT
25
s(
6
M
S=
4V
1s
IDR (A)
PT (W)
LI
W
VG
ID (A)
ith
ho
N)
(O
Inf
t)
0V
20 ini
S
RD
te
1 He
4 ats
15 ink
10
2
Without Heatsink
TC=25°C 5
1-Circuit Operation
0 0.1 0
0 0.5 1.0 1.5 0.1 1 10 100 0 50 100 150
104
SLA5086 P-channel

Specification
ID –5 A IDSS –100 µA VDS=–60V, VGS=0V
ID(pulse) –10 (PW≤1ms, duty≤25%) A VTH –1.0 –2.0 V VDS=–10V, ID=–250µA
5 (Ta=25°C, with all circuits operating, without heatsink) Re(yfs) 4 6 S VDS=–10V, ID=–3A
PT W
30 (Tc=25°C,with all circuits operating, with infinite heatsink) RDS(ON) 0.14 0.22 Ω VGS=–10V, ID=–3A
θ j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W Ciss 790 pF VDS=–10V,
Tch 150 °C td(on) 40 ns ID=–3A, VDD –20V,
Tstg –40 to +150 °C tr 110 ns RL=6.67Ω,
td(off) 160 ns VGS=–5V,
VSD –1.0 –1.5 V ISD=–5A, VGS=0V
trr 85 ns ISD=3A, VGS=0V, di/dt=100A/µs
1 12
2 4 6 8 10
3 5 7 9 11
(Ta=25°C) –10
(VDS=–10V) (Ta=25°C)
–10 0.30
V
–10V
–4
–3.7V
0.25
–8 –8
–4V
–3.5V
0.20
(ON) (Ω)
–6 –6
ID (A)
ID (A)
–3.3V
0.15 VGS=–10V
RDS
–4 –4
–3.0V Ta=125°C
0.10
25°C
–2 –2.7V –2
0.05
VGS=–2.5V
–40°C
0 0 0
0 –2 –4 –6 –8 –10 0 –1 –2 –3 –4 –5 0 –2 –4 –6 –8 –10

VGS=0V
(VDS=–10V) (ID=–3A) (Ta=25°C) f=1MHz
50 0.35 5000
0.30
10 1000
V Ciss
Capacitance (pF)
0.25 –4
°C S=
–40
Re (yfs) (S)
VG
(ON) (Ω)
Ta =
0.20 V
–10
25°C Coss
RDS
0.15
1 125°C 100
0.10 Crss
0.05
0.1 0 10
–0.05 –0.1 –1 –10 –40 0 50 100 150 0 –10 –20 –30 –40 –50

(Ta=25°C) All Circuits Operating
–10 –20 40
100µs
–10 35
–8
1m
30
s
10
m
s
ED
25
IT
IDR (A)
–6
IM
PT (W)
W
ith
L
ID (A)
N)
0V
In
(O
20 fin
–1
ite
RD
4V
S=
He
VG
– –1
–4 at
15 sin
k
0V
10
–2
Without Heatsink
5
TC=25°C
1-Circuit Operation
0 –0.1 0
0 –0.5 –1.0 –1.5 –0.1 –1 –10 –100 0 50 100 150
105
SLA5088 N-channel

Ratings
Symbol Unit
FET 1 FET 2
VDSS 150 V
VGSS +20, –10 V
ID ±5 ±7 A
ID (pulse)*1 ±10 ±15 A
PT
Tch 150 °C
Tstg –40 to +150 °C
* : PW≤100µs, duty≤50%

3 8 10 12 14
FET1 FET2 FET2 FET2 FET2

2 7 9 11 13
1 15 Pins 4, 5, 6 : NC
FET 1 FET 2 FET 1
7 7
(VDS=10V)
5
10V
10V 6 4V 6
4V
4
5 2.8V 5
3 2.8V
ID (A)
4 4
ID (A)
ID (A)
2.6V 3
3
2
2.6V
2 2
2.4V
°C
C
1
2 5°
125
–40°C
2.4V 1
1
Tc=
VGS=2.2V
VGS=2.2V
0 0
0 0 2 4 6 8 10 0 1 2 3 4
0 2 4 6 8 10

FET 1 FET 2 FET 2
200 5
(VDS=10V)
500
4V
VGS=10V 4
400
4V 150
(ON) (mΩ)
VGS=10V
(ON) (mΩ)
300 3
ID (A)
100
RDS
RDS
200 2
50
°C
1
1 25
100
C
–40°C
25 °
T c=
0 0 0
0 1 2 3 4 5 0 1 2 3 4 5 6 7 0 1 2 3 4

FET 1 FET 2 (ID=3.5A)
1.0
(ID=2.5A) 500
400
(ON) (mΩ)
4V
(ON) (Ω)
4V 300
V
10
V S=
0.5 = 10 VG
GS
V
RDS
RDS
200
100
0 0
–40 0 50 100 150 –40 0 50 100 150
TC (°C) TC (°C)
106
SLA5088
FET 1 FET 2
IGSS 100 nA VGS=20V 100 nA VGS=20V
Re(yfs) 3 5.5 S VDS=10V, ID=2.5A 4 9 S VDS=10V, ID=3.5A
RDS(ON)
td (on) 25 ns ID=2.5A, 25 ns ID=3.5A,
td (off) 55 ns RL=28Ω, 80 ns RL=20Ω,
FET 1 FET 2 FET 1
10 (VDS=10V) 20
(VDS=10V) 20
(TC=25°C)
ID (pulse) MAX
10 10
0µ
10 s
5 5 ED 1m
0° IT
C
0°
C M 10 s
–4 –4 LI m
C= 5°
C )
5°
C= C s(
on
Re (yfs) (S)
T T 1s
12 12 (
Re (yfs) (S)
5 S ho
RD t)
25°C 1
25°C
ID (A)
0.5
1
1
0.05
0.5
0.5
0.3 0.3 0.01

0.05 0.1 0.5 1 5 0.05 0.1 0.5 1 5 7 0.5 1 5 10 50 100 200

VGS=0V VGS=0V
FET 1 f=1MHz
FET 2 f=1MHz
FET 2
1000 5000 20
(TC=25°C)
10
0µ
10 s
500 1m
Ciss m
s
(1
Capacitance (pF)
RDS (on) LIMITED

Capacitance (pF)
sh
1000 ot
)
Ciss
ID (A)
100 500 0.5
Coss
50
Coss 0.05
100
Crss
Crss
50
10 40 0.01
0 10 20 30 40 50 0 10 20 30 40 50 0.5 1 5 10 50 100 200

FET 1 FET 2 50
5 7
6
40
4
5
W
ith
30
PT (W)
3
IDR (A)
4
In
IDR (A)
fin
ite
V
10
H
ea
4V
3
si
V
20
10
nk
2
4V
VGS=0V VGS=0V
2
1 10
1
Without Heatsink
0 0 0
0 0.5 1.0 1.5 0 0.5 1.0 1.5 0 50 100 150
107

Ratings
Symbol NPN PNP Unit
VCBO 60 –60 V
VCEO 60 –60 V
VEBO 6 –6 V
IC 4 –4 A
IB 0.5 –0.5 A
5 (Ta=25°C)
PT W
25 (Tc=25°C)
Tj 150 °C
Tstg –40 to +150 °C
θ j–c 5 °C/W

1
R2 R3
2 8 9
3 7 10
4 6 11
R1
5 12 R1: 3kΩ typ R2: 2kΩ typ R3: 150Ω typ
NPN PNP NPN
(VCE=4V)
6 –6 6
mA mA
A
2.0 –1.8 A
.0m
–1.5m
A
1.0mA
2.2m
=4
5
IB
A
–1.2m
IB=–
0.6mA
4 –4 –1.0mA 4
–0.9mA
IC (A)
IC (A)
IC (A)
0.4mA –0.8mA
3
0.3mA
2 –2 2
°C
125
75°C
25°C
Ta=
–30°C
0 0 0
0 2 4 6 0 –2 –4 –6 0 1 2 3

NPN PNP PNP
20000 20000 –6
10000 typ 10000

–5
5000 5000 typ
–4
IC (A)
1000 1000
hFE
hFE
–3
500 500
–2
25°C
75°C
25°C
100 100 –1
–30°C
Ta=1
50 50
30 30 0
0.03 0.05 0.1 0.5 1 56 –0.03 –0.05 –0.1 –0.5 –1 –5 –6 0 –1 –2 –3

NPN PNP
20000 20000
10000 10000
5000 5000
°C
25 C
=1 °
Ta 75 °C °C
25 25 75°C
=1
0°
1000 C 1000
hFE
Ta
–3 25°C
hFE
0°
500 500 C
–3
100 100
50 50
30 30
0.03 0.05 0.1 0.5 1 56 –0.03 –0.05 –0.1 –0.5 –1 –5 –6
IC (A) IC (A)
108
SLA6012
NPN PNP
IEBO 10 µA VEB=6V –10 mA VEB=–6V
NPN PNP
3 –3 20
10
θj–a (°C / W)
2 –2
VCE (sat) (V)
VCE (sat) (V)
IC=4A
IC=–4A
IC=2A IC=–2A
1 –1
IC=1A IC=–1A
1
0 0 0.5
0.1 0.5 1 5 10 50 100 –0.3 –0.5 –1 –5 –10 –50 –100 1 5 10 50 100 500 1000

NPN PNP
(IC / IB=1000) (IC / IB=1000) 25
3 –3
Natural Cooling
Heatsink: Aluminum
25°C
20 in mm
25°C
W
75°C
ith
Ta=1
Inf
init
2 –2
VCE (sat) (V)
VCE (sat) (V)
eH
15
PT (W)
ea
25°C
tsin
10
0×
k
75°C
C
10
0°
0×
–3
10 2
Ta=–30°C
50
1 –1 ×50
×2
Without Heatsink
5
125°C
0 0
0
0.5 1 5 6 –0.5 –1 –5 –6 –40 0 50 100 150

NPN PNP
10 –10
5 –5
1m
10
1m
s
m
s
10
s
m
s
1 –1
IC (A)
IC (A)
0.5 –0.5
0.1 –0.1
Ta=25°C Ta=25°C
0.03 –0.03
3 5 10 50 100 –3 –5 –10 –50 –100
VCE (V) VCE (V)
109
SLA6020

Ratings
Symbol NPN PNP Unit
VCBO 100 –100 V

VCEO 100 –100 V
VEBO 6 –6 V
IC 5 –5 A
IB 0.5 –0.5 A
5 (Ta=25°C)
PT W
25 (Tc=25°C)
Tj 150 °C
Tstg –40 to +150 °C
θ j–c 5 °C/W

1
R3 R4
2 8 9
3 7 10
4 6 11
R1 R2
5 12 R1: 2.5kΩ typ R2: 200Ω typ R3: 3kΩ typ R4: 100Ω typ
NPN PNP NPN
1mA 0.8mA 0.7mA 0.6mA (VCE=2V)
5 –8 5
IB=2mA IB=–4mA
A
0.5m
A –2m
–7
4
–1.2mA 4
–6
A
0.4m
3 –5 –0.8mA
3
IC (A)
IC (A)
IC (A)
–4
–0.6mA
2 2
°C
–3
–30°C
125
75°C
25°C
Ta=
–2 –0.4mA
1 1
–1
0 0 0
0 1 2 3 4 5 0 –1 –2 –3 –4 –5 0 1 2 3

NPN PNP PNP
20000 20000 –8
10000 typ 10000

typ
5000 5000
–6
IC (A)
1000 1000
hFE
hFE
–4
500 500
–2
25°C
75°C
100 100
25°C
–30°C
T a= 1
50 50
30 30 0
0.03 0.05 0.1 0.5 1 5 8 –0.03 –0.05 –0.1 –0.5 –1 –5 –8 0 –1 –2 –3

NPN PNP
20000 20000
10000 10000
5000 5000
°C
25
=1
Ta 75°C
5°
C
75°C
= 12 25°C
1000 0°
1000 C
Ta 25°C
hFE
–3
hFE
500 ° C 500
– 30
100 100
50 50
30 30
0.02 0.05 0.1 0.5 1 5 8 –0.03 –0.05 –0.1 –0.5 –1 –5 –8
IC (A) IC (A)
110
SLA6020
NPN PNP
NPN PNP
3 –3 20
10
2 –2
VCE (sat) (V)
VCE (sat) (V)
θ j–a (°C / W)
IC=–5A
IC=5A
IC=–3A
IC=3A
1 –1 IC=–1A
IC=1A
0 0 0.5
0.2 0.5 1 5 10 50 –0.2 –0.5 –1 –5 –10 –50 –100 –500 1 5 10 50 100 500 1000

NPN PNP
(IC / IB=1000) (IC / IB=1000) 25
2 –3
Natural Cooling
Heatsink: Aluminum
20 in mm
W
ith
–2
VCE (sat) (V)
VCE (sat) (V)
Inf
15
init
PT (W)
eH
10
ea
1 Ta=–30°C 0×
tsin
10
0×
k
10 2
25°C Ta=–30°C
75°C –1 25°C 50
125°C × 50
75°C × 2
Without Heatsink
125°C 5
0 0 0
0.5 1 5 –0.3 –0.5 –1 –5 –8 –40 0 50 100 150

NPN PNP
10 –10
100
10
0µ
µs
5 –5
s
1m
1m
10
10
s
ms
m
s
1 –1
IC (A)
IC (A)
0.5 –0.5
0.1 –0.1
0.03 Ta=25°C –0.03 Ta=25°C
3 5 10 50 100 –3 –5 –10 –50 –100
VCE (V) VCE (V)
111
SLA6022

Ratings
Symbol NPN PNP Unit
VCBO 100 –100 V

VCEO 80 –100 V
VEBO 6 –6 V
IC 5 –5 A
IB 0.5 –0.5 A
5 (Ta=25°C)
PT W
25 (Tc=25°C)
Tj 150 °C
Tstg –40 to +150 °C
θ j–c 5 °C/W

1
R2 R3
2 8 9
3 7 10
4 6 11
R1
5 12
R1: 2.5kΩ typ R2: 2.5kΩ typ R3: 200Ω typ
NPN PNP NPN
(VCE=4V)
8 –8 8
A A
6m 2mA –2m
mA
7 –7
m
20
–4
IB =
IB=
mA
6 –6 –1.2 6
1mA
5 –5
–0.8mA
IC (A)
IC (A)
IC (A)
A
0.6m
4 –4 4
–0.6mA
3 0.4mA –3
2 –2 –0.4mA 2
°C
125
C
25°C
–30°C
75 °
1 –1
Ta=
0 0 0
0 1 2 3 4 5 0 –1 –2 –3 –4 –5 0 1 2 3

NPN PNP PNP
20000 20000 –8
10000 10000
typ
typ
5000 5000
–6
IC (A)
1000 1000
hFE
hFE
–4
500 500
–2
25°C
75°C
25°C
100 100
–30°C
Ta=1
50 50 0
0.03 0.05 0.1 0.5 1 5 8 –0.03 –0.05 –0.1 –0.5 –1 –5 –8 0 –1 –2 –3

NPN PNP
20000 20000
10000 10000
5000 5000
5° 5°C
C
12 7 °C
a= °C 25 5°C
T 25 =1 7
Ta 25°C
0°
C
hFE
0°
1000 C
hFE
1000
-3 –3
500 500
100 100
50 50
0.03 0.1 0.5 1 5 8 –0.03 –0.1 –0.5 –1 –5 –8
IC (A) IC (A)
112
SLA6022
NPN PNP
VFEC V 1.3 V IFEC=1A
trr µs 2.0 µs IFEC=±100mA
NPN PNP
3 –3 20
10
–2
VCE (sat) (V)
2
VCE (sat) (V)
θ j–a (°C / W)
5
IC=–5A
IC=–3A
IC=5A
IC=3A IC=–1A
1 –1
IC=1A
0 0 0.5
–0.2 –0.5 –1 –5 –10 –50 –100 1 5 10 50 100 500 1000
0.2 0.5 1 5 10 50 100
IB (mA)
IB (mA) PW (mS)

NPN PNP
(IC / IB=1000) (IC / IB=1000) 25
3 –3
25°C With Silicone Grease
Natural Cooling
75°C
Heatsink: Aluminum
20 in mm
W
ith
5°C
–30°C
Inf
2 –2
VCE (sat) (V)
VCE (sat) (V)
init
Ta=12
15
PT (W)
eH
10
ea
0×
tsin
10
0×
k
10 2
Ta=–30°C 50
1 –1 25°C × 50
75°C
×2
Without Heatsink
5
125°C
0
0 0
0.3 0.5 1 5 8 –40 0 50 100 150
–0.3 –0.5 –1 –5 –8

NPN PNP
10 –10
5 –5
1m
10
s
ms
1m
10
s
ms
1 –1
IC (A)
IC (A)
0.5 –0.5
0.1 –0.1
Ta=25°C
0.03 Ta=25°C –0.03
3 5 10 50 100 –3 –5 –10 –50 –100
VCE (V) VCE (V)
113

Ratings
Symbol NPN PNP Unit
VCBO 60 –60 V
VCEO 60 –60 V
VEBO 6 –6 V
IC 6 –6 A
IB 0.5 –0.5 A
5 (Ta=25°C)
PT W
25 (Tc=25°C)
Tj 150 °C
Tstg –40 to +150 °C
θ j-c 5 °C/W

1
R2 R3
2 8 9
3 7 10
4 6 11
R1
5 12
R1: 2kΩ typ R2: 3kΩ typ R3: 80Ω typ
NPN PNP NPN
(VCE=4V)
12 –12 12
A A –5mA
mA
m 0m 5mA IB=–10mA
30 1
100
–3mA
IB=
10 –10 10
–2mA
2mA
–8 8
8
IC (A)
IC (A)
IC (A)
1mA
–6 6
6
–1mA
–4 4
4
0.5mA –0.5mA
°C
25°C
2
C
125
–2
75°
2
–30°C
T a=
0 0
0 0 –2 –4 –6 0 1 2 3
0 2 4 6 VCE (V) VBE (V)
VCE (V)

NPN PNP PNP
20000 20000 –12
10000 10000
–10
typ
typ
5000 5000
–8
IC (A)
hFE
hFE
–6
1000 1000 –4
°C
500 500
75°C
125
25°C
–2
°C
Ta=
–30
200 200 0
0.1 0.5 1 5 10 12 –0.1 –0.5 –1 –5 –10 –12 0 –1 –2 –3

NPN PNP
20000 20000
Ta=125°C
10000 10000
5000 5000
75°C
5 °C
hFE
12 °C 25°C
hFE
= 75
Ta
5°
C
2
0°
C
1000 –3 1000 –30°C
500 500
200 200
0.1 0.5 1 5 10 12 –0.1 –0.5 –1 –5 –10 –12
IC (A) IC (A)
114
SLA6023
NPN PNP
hFE 2000 5000 12000 VCE=4V, IC=5A 2000 5000 12000 VCE=–4V, IC=–5A
VCE(sat) 1.5 V –1.5 V
IC=5A, IB=10mA IC=–5A, IB=–10mA
VBE(sat) 2.0 V –2.0 V
VFEC V 2.0 V IFEC=5A
trr µs 1.0 µs IFEC=±0.5A
ton 0.8 µs VCC 25V, 1.0 µs VCC –25V,
tstg 6.0 µs IC=5A, 1.4 µs IC=–5A,
tf 2.0 µs IB1=–IB2=10mA 0.6 µs IB1=–IB2=–10mA
fT 80 MHz VCE=12V, IE=–1A 120 MHz VCE=–12V, IE=1A
Cob 100 pF VCB=10V, f=1MHz 150 pF VCB=–10V, f=1MHz
NPN PNP
3 –3 20
10
VCE (sat) (V)
θ j–a (°C / W)
VCE (sat) (V)
5
2 –2
IC=8A IC=–8A
IC=4A IC=–4A
1
1 IC=2A –1
IC=–2A
0.6 0.6 0.5

0.2 0.5 1 5 10 50 100 200 –0.2 –0.5 –1 –5 –10 –50 –100 –200 1 5 10 50 100 500 1000

NPN PNP
(IC / IB=1000) (IC / IB=1000)
3 –3 25
Natural Cooling
Heatsink: Aluminum
20 in mm
W
ith
Inf
2 –2
VCE (sat) (V)
VCE (sat) (V)
init
15
eH
PT (W)
ea
10
0×
tsin
10
k
0 ×2
10
Ta=125°C –1 Ta=–30°C 50
1 × 50
75°C 25°C × 2
25°C 75°C Without Heatsink
5
–30°C 125°C
0 0 0
0.1 0.5 1 5 10 20 –0.1 –0.5 –1 –5 –10 –20 –40 0 50 100 150

NPN PNP
20 –20
10
10
–10
0µ
s
1m
5
10
1m
–5
100µs
10
ms
s
ms
IC (A)
IC (A)
1 –1
0.5 –0.5

Without Heatsink Without Heatsink
Ta=25°C Ta=25°C
0.1 –0.1
3 5 10 50 100 –3 –5 –10 –50 –100
VCE (V) VCE (V)
115

Ratings
Symbol NPN PNP Unit
VCBO 60 –60 V
VCEO 60 –60 V
VEBO 6 –6 V
IC 8 –8 A
IFEC — –8 A
IFECP — –12 A
IB 0.5 –0.5 A
5 (Ta=25°C)
PT W
25 (Tc=25°C)
Tj 150 °C
Tstg –40 to +150 °C
θ j–c 5 °C/W

1
R1 R2
2 8 9
3 7 10
4 6 11
R3
5 12
R1: 2kΩ typ R2: 80Ω typ R3: 2kΩ typ
NPN PNP NPN
8 –8
(VCE=4V)
IB=5mA
8
IB=–5mA
7 –7 7
IB=–2mA
6 –6 6
1.0mA
5 –5
IC (A)
5
Ta=–20°C
25°C
75°C
125°C
IC (A)
IC (A)
4 –4 4
0.7mA IB=–1mA
3 –3 3
2 –2
0.5mA
2
IB=–0.6mA
1 –1 1
0
0 1 2 3 4 5 6 0
0 –1 –2 –3 –4 –5 –6 0 0.5 1 1.5 2 2.5 3

NPN PNP PNP
10000 10000 –8
typ
typ –7
–6
1000 1000
–5
IC (A)
hFE
hFE
–4
Ta=–20°C
25°C
75°C
125°C
–3
100 100
–2
–1
10 10 0
0.01 0.1 1 10 12 –0.01 –0.1 –1 –10 –12 0 –0.5 –1 –1.5 –2 –2.5 –3

NPN PNP
10000 10000
°C
25 °C
1000 =1 75
1000 Ta °C
25 °C
°C 0
25 C –2
hFE
=1 75° C
hFE
Ta °
25
0°
C
–2
100 100
10 10
0.01 0.1 1 1012 –0.01 –0.1 –1 –10–12
IC (A) IC (A)
116
SLA6024
NPN PNP
VCE(sat) 1.5 V –1.5 V
VBE(sat) 2.0 V –2.0 V
VFEC — V 2.0 V IFEC=5A
trr — µs 1.0 µs IFEC=±0.5A
VCE(sat)-IB Temperature Characteristics (Typical) θ j-a-PW Characteristics
NPN PNP
(IC=5A) (IC=–5A)
3 –3 20
2.5 –2.5 10
2 –2
Ta=25°C
VCE (sat) (V)
VCE (sat) (V)
θ j–a (°C / W)
5
Ta=–20°C
Ta=25°C
1.5 –1.5
Ta=–20°C
1 –1
Ta=75°C
1
0.5 –0.5
Ta=125°C
Ta=75°C Ta=125°C
0 0 0.5
0.5 1 10 100 –0.5 –1 –10 –100 1 5 10 50 100 500 1000

NPN PNP
(IB=10mA) (IB=–10mA) 25
2 –2
Natural Cooling
Heatsink: Aluminum
20 in mm
W
1.5 –1.5
ith
Inf
init
VCE (sat) (V)
VCE (sat) (V)
15
eH
PT (W)
Ta=25°C Ta=–20°C
ea
Ta=25°C 10
tsin
1 –1 Ta=–20°C 0×
10
k
0 ×2
10
50
×50
×2
0.5 –0.5 Without Heatsink
5
Ta=75°C Ta=75°C
Ta=125°C Ta=125°C
0 0 0
0.01 0.1 1 10 12 –0.01 –0.1 –1 –10 –12 –40 0 50 100 150

NPN PNP
20 –20
10 –10
10
10
0µ
0µ
s
s
1m
1m
S
10
10
m
m
S
1 –1
IC (A)
IC (A)
0.1 –0.1

Ta=25°C Ta=25°C
0.01 –0.01
1 5 10 50 100 –1 –5 –10 –50 –100
VCE (V) VCE (V)
117
SLA6026 3-phase motor drive External dimensions A ••• SLA (12-pin)

Ratings
Symbol NPN PNP Unit
VCBO 60 –60 V
VCEO 60 –60 V
VEBO 6 –6 V
IC 10 –10 A
IFEC — –10 A
IFECP — –15 A
IB 0.5 –0.5 A
5 (Ta=25°C)
PT W
35 (Tc=25°C)
Tj 150 °C
Tstg –40 to +150 °C
θ j–c 3.57 °C/W

1
R1 R2
2 8 9
3 7 10
4 6 11
R3
5 12
NPN PNP NPN
10
(VCE=2V)
–10 –3mA 15
IB=2mA
IB=–5mA
9 –9
1mA
8 –8 –2mA
7 –7
0.8mA 10
6 –6
IC (A)
IC (A)
IC (A)
5 –5
0.6mA
4 –1mA
–4
5
25°C
75°C
3
25°C
–3
–30°C
T a= 1
2 –2
0.4mA –0.6mA
1 –1
0 0 0
0 1 2 3 4 5 6 0 –1 –2 –3 –4 –5 –6 0 1 2 3

NPN PNP PNP
20000 20000 –15
10000 typ 10000
5000 5000 typ

–10
IC (A)
hFE
hFE
1000 1000
–5
5°C
75°C
25°C
–30°C
500 500
Ta=12
100 100 0
0.1 1 10 15 –0.1 –1 –10 –15 0 –1 –2 –3

NPN PNP
20000 20000
IB=125°C
10000 10000
°C
25 75°C
=1 °C
Ta 75 C
° 25°C
25
0°
C
–3
–30°C
hFE
hFE
1000 1000
100 100
0.1 1 10 15 –0.1 –1 –10 –15
IC (A) IC (A)
118
SLA6026
NPN PNP
VCE(sat) 1.5 V –1.5 V
VBE(sat) 2.0 V –2.0 V
VFEC – V 2.0 V IFEC=–6A
trr – µs 4.0 µs IFEC=±0.5A
NPN PNP
(IC=5A) (IC=–5A)
3 –3 20
2.5 –2.5 10
75°C 75°C
2 –2
VCE (sat) (V)
θ j–a (°C / W)
VCE (sat) (V)
25°C 25°C
1.5 –1.5
–30°C –30°C
1 –1
1
IB=125°C Ta=125°C
0.5 –0.5
0 0 0.3
0.3 1 10 100 500 –0.3 –1 –10 –100 –500 1 10 100 1000 2000

NPN PNP
(IB=10mA) (IB=–10mA)
3 –3 40
Natural Cooling
Heatsink: Aluminum
in mm
30
W
ith
2 –2
VCE (sat) (V)
VCE (sat) (V)
In
fin
PT (W)
ite
He
20
at
sin
k
25°C 75°C 100×100×2

1 25°C
–1
–30°C –30°C
10 50×50×2
75°C Without Heatsink
Ta=125°C Ta=125°C
0 0 0
0.01 0.1 1 10 15 –0.01 –0.1 –1 –10 –15 –40 0 50 100 150

NPN PNP
20 –20
10
10
0µ
0µ
10 –10
S
S
1m
1m
s
s
IC (A)
IC (A)
1 –1

Ta=25°C Ta=25°C
0.1 –0.1
1 5 10 50 100 –1 –5 –10 –50 –100
VCE (V) VCE (V)
119
SLA8001
PNP + NPN

Ratings
Symbol NPN PNP Unit
VCBO 60 –60 V
VCEO 60 –60 V
VEBO 6 –6 V
IC 12 –12 A
IB 3 –3 A
5 (Ta=25°C)
PT W
40 (Tc=25°C)
Tj 150 °C
Tstg –40 to +150 °C
θ j–c 3.12 °C/W

4 8
R2
5 9
3 7
6 10
2 12
R1
1 11
NPN PNP NPN
–12
(VCE=1V)
12 12
A
–150m
A
A
0m
A
0m
0m 100mA
–20
15
20
10 –10 –100mA
10
IB=
IB=
60mA
8 –8 8
–60mA
IC (A)
IC (A)
IC (A)
40mA
6 –6 6
–40mA
4 20mA
–4 4
–20mA
°C
10mA
125
2 –2
C
–10mA 2
25°C
75°
–30°C
Ta=
0 0 0
0 1 2 3 4 5 6 0 –1 –2 –3 –4 –5 –6 0 0.5 1.0 1.5

NPN PNP PNP
500 –12
500
typ
typ –10
100 100
–8
50 50
IC (A)
hFE
hFE
–6
–4
10 10
°C
5
125
5 –2
25°C
75°
°C
Ta=
–30
2 2 0
–0.02 –0.05 –0.1 –0.5 –1 –5 –10 –12 0 –0.5 –1.0 –1.5
0.02 0.05 0.1 0.5 1 5 1012

NPN PNP
500 500
°C
25
100 =1 75°C 100 °C
Ta 25 C
25
°C =1 75°
Ta °C
0° 25 C
C
50
0°
50 –3
–3
hFE
hFE
10 10
5 5
2 2
0.02 0.05 0.1 0.5 1 5 1012 –0.02 –0.05 –0.1 –0.5 –1 –5 –10 –12
IC (A) IC (A)
120
SLA8001
NPN PNP
VFEC 2.5 V IFEC=10A 2.5 V IFEC=10A
NPN PNP
1.5 –1.5 10
1.0 –1.0
θ j–a (°C / W)
VCE (sat) (V)
VCE (sat) (V)
1
0.5 –0.5 IC=–12A
IC=12A –9A
9A –6A
6A 0.5
3A –3A
1A
–1A
0 0 0.3
5 10 50 100 500 1000 5000 –5 –10 –50 –100 –500 –1000 –5000 1 5 10 50 100 500 1000

NPN PNP
(IC / IB=20) (IC / IB=20) 40
1.0 –1.0
Natural Cooling
Heatsink: Aluminum
in mm
W
30
ith
Inf
init
VCE (sat) (V)
VCE (sat) (V)
eH
PT (W)
ea
tsin
Ta=125°C
0.5 –0.5 20
k
75°C
Ta=125°C
10
25°C 0×
75°C 10
10 0×
2
25°C –30°C 50×
50×
2mm
–30°C Without Heatsink
0 0 0
0.02 0.05 0.1 0.5 1 5 1012 –0.02 –0.05 –0.1 –0.5 –1 –5 –10–12 –40 0 50 100 150

NPN PNP
30 –30
1m
1m
s
10
10
s
ms
ms
10 –10
5 –5
IC (A)
IC (A)
1 –1
0.5 –0.5
Ta=25°C Ta=25°C
0.23 –0.2
5 10 50 100 –3 –5 –10 –50 –100
VCE (V) VCE (V)
121
SMA4020 PNP Darlington
General purpose External dimensions B ••• SMA

Specification

IC –4 A hFE 2000 VCE=–4V, IC=–3A
IB –1 A VCE(sat) –1.5 V IC=–3A, IB=–6mA
4 (Ta=25°C)
PT W
20 (Tc=25°C)
Tj 150 °C
Tstg –40 to +150 °C
3 6 7 10
R1 R2
1 5 8 12
2 4 9 11
–6
10000 10000
mA
–1.8 A
–1.5m 75°C
.2mA
5000 typ 5000

A 25°C
–1.2m
IB=–2
–4 –1.0mA °C
25
–0.9mA =1
IC (A)
Ta
–0.8mA 1000 1000
0°
C
hFE
hFE
–3
500 500
–2
100 100
0 50 50
0 –1 –2 –3 –4 –5 –6 –0.03 –0.1 –0.5 –1 –5 –6 –0.03 –0.1 –0.5 –1 –5 –6
(IC / IB=1000) (VCE=–4V)
–3 –3 –6
–5
75°C
25°C
–2 –2 –4
VCE (sat) (V)
VCE (sat) (V)
IC (A)
25°C
°C
–30°C
Ta=125
75°C –3
IC=–4A
Ta=–30°C
IC=–2A
–1 –1 –2
IC=–1A
125°C
–1
0 0 0
–0.5 –1 –5 –6 –0.2 –0.5 –1 –5 –10 –50 –100 0 –1 –2 –3

20 20 –10
–5
1m
10
10
s
m
15
s
W
ith
θ j–a (°C / W)
5
Inf
–1
PT (W)
init
IC (A)
eH
10
ea
–0.5
tsin
k
5
Without Heatsink –0.1
1
Single Pulse
Ta=25°C
0.5 0 –0.03
1 5 10 50 100 500 1000 –40 0 50 100 150 –3 –5 –10 –50 –100
122
SMA4021 PNP Darlington
With built-in flywheel diode External dimensions B ••• SMA

Specification
IC –3 A hFE 2000 5000 12000 VCE=–4V, IC=–2A
ICP –6 (PW≤1ms, Du≤50%) A VCE(sat) –1.5 V
IC=–2A, IB=–4mA
IB –0.5 A VBE(sat) –2.0 V
IF –6 (PW≤0.5ms, Du≤25%) A ●Diode for flyback voltage absorption (Ta=25°C)
IFSM –8 (PW≤10ms, Single pulse) A Specification
4 (Ta=25°C) VR 100 V IR=10µA
PT W
20 (Tc=25°C) VF 1.2 V IF=1A
Tj 150 °C IR 10 µA VR=100V
Tstg –40 to +150 °C trr 100 ns IF=±100mA

6 7
R1 R2
1
5 8 12
2 3 4 9 10 11
–6 10000 10000
m A
–1.8 A
–1.5m 5000 typ 5000
.2mA
A
–1.2m
IB=–2
˚C
–1.0mA 25
–4 =1
–0.9mA Ta
IC (A)
–0.8mA 1000 1000

C
0˚
hFE
hFE
–3
500 500
–2
75˚C
25˚C
100 100
0 50 50
0 –1 –2 –3 –4 –5 –6 –0.03 –0.05 –0.1 –0.5 –1 –5 –6 –0.03 –0.05 –0.1 –0.5 –1 –5 –6
(IC / IB=1000) (VCE=–4V)
–3 –3 –6
–5
75°C
–2 –2 –4
VCE (sat) (V)
VCE (sat) (V)
25°C
IC (A)
25°C
–3
°C
75°C
Ta=125
IC=–4A
–30°C
Ta=–30°C
–1 –1 IC=–2A –2
IC=–1A
125°C
–1
0 0 0
–0.5 –1 –5 –6 –0.2 –0.5 –1 –5 –10 –50 –100 0 –1 –2 –3

20 20 –10
–5
10
10µs
0µ
10 s
1m
15
W
10
s
ith
m
s
Inf
θ j–a (°C / W)
5
init
–1
PT (W)
eH
IC (A)
ea
10 –0.5
tsin
k
5
Without Heatsink
1 –0.1
Single Pulse
Ta=25°C
0.5 0 –0.03
1 5 10 50 100 500 1000 –40 0 50 100 150 –3 –5 –10 –50 –100
123
SMA4030 NPN Darlington

Specification

IC 3 A hFE 2000 6000 15000 VCE=4V, IC=1.5A
IC=1.5A, IB=3mA
IB 0.2 A VBE(sat) 1.7 2.0 V
4 (Ta=25°C) ton 0.5 µs VCC 30V
PT W
20 (Tc=25°C) tstg 2.2 µs IC=1.5A
Tj 150 °C tf 0.9 µs IB1=–IB2=3mA
Tstg –40 to +150 °C fT 40 MHz VCE=12V, IE=–0.5A
Cob 30 pF VCB=10V, f=1MHz
2 4 9 11
5 8 12
1
R1 R2
3 6 7 10
(VCE=4V) (VCE=4V)
5 20000 20000
75°C
mA
A
1 10000 typ 10000

2m
0.6mA 25°C
4 5000 5000
A
IB=10m
0.4mA
°C
3 25
=1
IC (A)
0.3mA Ta
hFE
hFE
1000 1000
0°
C
–3
2 500 500
1
100 100
0 50 50
0 1 2 3 4 5 6 0.03 0.05 0.1 0.5 1 5 0.03 0.05 0.1 0.5 1 5
(IC / IB=1000) (VCE=4V)
3 3 5
4
75°C
2 2
VCE (sat) (V)
25°C
VCE (sat) (V)
25°C 3
IC (A)
75°C IC=3A
IC=1.5A 2
Ta=–30°C
1 1
°C
IC=1A
125
125°C
Ta=
–30°C
0 0 0
0.5 1 5 0.1 0.5 1 5 10 50 0 1 2 3

20 20 10
10
5 0µ
s
10
15
W
1m
ith
10
θ j–a (°C / W)
s
Inf
5
m
init
1
PT (W)
IC (A)
eH
ea
10
0.5
tsin
k
5
Without Heatsink
1 0.1
Single Pulse
0.5 0 Ta=25°C
0.03
0 5 10 50 100 500 1000 –40 0 50 100 150
3 5 10 50 100
124
SMA4032 NPN Darlington

Specification
IC 3 A hFE 2000 6000 15000 VCE=4V, IC=1.5A
IC=1.5A, IB=3mA
IB 0.2 A VBE(sat) 1.7 2.0 V
IFSM 5 (PW≤10ms, Single pulse) A tstg 2.2 µs IC=1.5A,
4 (Ta=25°C) fT 40 MHz VCE=12V, IE=–0.5A
PT W
20 (Tc=25°C) Cob 30 pF VCB=10V, f=1MHz
Tj 150 °C
Tstg –40 to +150 °C ●Diode for flyback voltage absorption (Ta=25°C)
Specification
■Equivalent circuit diagram Symbol min typ max Unit Conditions
VR 120 V IR=10µA
2 3 4 9 10 11
VF 1.6 V IF=1A
IR 10 µA VR=120V
1 5 8 12
R1 R2
6 7
(VCE=4V) (VCE=4V)
5 20000 20000
A A 75°C
2m 1m 10000 typ
0.6mA 10000
25°C
4
5000
mA
5000
0.4mA
IB=10
3
°C
IC (A)
0.3mA 25
=1
Ta
hFE
hFE
1000 1000
0°
C
2 500 –3
500
100 100
0 50 50
0 1 2 3 4 5 6 0.03 0.05 0.1 0.5 1 5 0.03 0.05 0.1 0.5 1 5
(IC / IB=1000) (VCE=4V)
3 5
3
4
75°C
2 2
VCE (sat) (V)
25°C
VCE (sat) (V)
25°C 3
IC (A)
75°C IC=3A
IC=1.5A 2
Ta=–30°C
1 1
°C
IC=1A
125
125°C
–30°C
Ta=
0 0 0
0.5 1 5 0.1 0.5 1 5 10 50 0 1 2 3

20 20 10
10
5 0µ
s
10
15
W
ith
1m
Inf
s
θ j–a (°C / W)
10
init
5
m
1
eH
IC (A)
PT (W)
s
ea
tsin
10 0.5
k
5
Without Heatsink
1 0.1
Single Pulse
Ta=25°C
0.5 0 0.03
0 5 10 50 100 500 1000 –40 0 50 100 150 3 5 10 50 100
PW (mS) VCE (V)
Ta (°C)
125
SMA4033
NPN Darlington

Specification
IC 2 A hFE 2000 6000 15000 VCE=4V, IC=1A
IC=1A, IB=2mA
IB 0.2 A VBE(sat) 1.7 2.0 V
IF 2 (PW≤0.5ms, Du≤25%) A ●Diode for flyback voltage absorption (Ta=25°C)
IFSM 4 (PW≤10ms, Single pulse) A
Specification
4 (Ta=25°C) VR 120 V IR=10µA
PT W
20 (Tc=25°C) VF 1.8 V IF=1A
Tj 150 °C IR 10 µA VR=120V
Tstg –40 to +150 °C trr 100 ns IF=±100mA
2 3 4 9 10 11
1 5 8 12
R1 R2
6 7
(VCE=4V) (VCE=4V)
4 10000 10000
typ
5000 5000
3 3mA B=4
mA
I
2mA
A 1000 1000 °C
1.2m 25 C
A =1 °
0.6m Ta 75 5°C
hFE
IC (A)
0°
2 500 500 2 C
hFE
0.4mA –3
0.3mA
1 100 100
50 50
0 20 20
0 1 2 3 4 5 6 0.02 0.05 0.1 0.5 1 4 0.02 0.05 0.1 0.5 1 4
(IC / IB=1000) (IC=1A) (VCE=4V)
3 3 4
75°C
25°C
°C
25°C
Ta=125
3
–30°C
VCE (sat) (V)
–30°C
2
C
2
75°
VCE (sat) (V)
IC (A)
2
Ta=125
°C
°C
1 1
–30
5°C
1
12
T a=
75°C
0 25°C
0 0
0.2 0.5 1 4 0.1 0.5 1 5 0 1 2 3

20 20 5
1m 10
0µ
10 s s
10 ms
15
W
θ j–a (°C / W)
ith
5 1
Inf
PT (W)
IC (A)
init
eH
10 0.5
ea
tsin
k
5
Without Heatsink
1
0.1
Single Pulse
Without Heatsink
0.5 0 Ta=25°C
0.05
0.2 0.5 1 5 10 50 100 500 1000 –40 0 50 100 150 3 5 10 50 100
126
SMA5101
N-channel

Specification
PT
28 (Tc=25°C, with all circuits operating, with infinite heatsink) W Ciss 180 pF VDS=25V, f=1.0MHz,
θ j–a 31.2 (Junction-Air, Ta=25°C, with all circuits operating) °C/W Coss 82 pF VGS=0V
θ j–c 4.46 (Junction-Case, Tc=25°C, with all circuits operating) °C/W ton 40 ns ID=4A, VDD 50V, VGS=10V,
* : VDD=20V, L=1mH, ID=5A, unclamped, see Fig. E on page 15. trr 250 ns ISD=±100mA
2 4 9 11
1 5 8 12
3 6 7 10
(VDS=10V) (VGS=10V)
8 8 0.8
TC=–40°C
10V
7 7 25°C
125°C
6 6 0.6
7V
(Ω)
5 5
ID (A)
ID (A)
(ON)
4 4 0.4
RDS
6V
3 3
2 2 0.2
VGS=5V
1 1
0 0 0
0 10 20 0 2 4 6 8 10
0 1 2 3 4 5 6 7 8
ID=4A VGS=0
5 1.2 600
1.0 Ciss
Capacitance (pF)
0.8
(Ω)
Re (yfs) (S)
100
Coss
(ON)
1 0.6
50
RDS
TC=–40°C
25°C 0.4
0.5
125°C
Crss
0.2 10
0 5
0.2 0 10 20 30 40 50
–40 0 50 100 150
0.05 0.1 0.5 1 5 8
TC (°C) VDS (V)
ID (A)
(TC=25°C)
8 10 30
ID (pulse) max
10
0µ

s
5 Natural Cooling
25
1m
ED
10

s
IT
6
M
s
LI
(1
sh
N)
20
ot
5
(O
)
IDR (A)
W
S
PT (W)
RD
ID (A)
ith
In
4 1
fin
15
ite
He
at
3
sin
0.5
k
10
2
10V
5 Without Heatsink
1 VGS=0V
5V
0 0.1 0
0 0.5 1.0 1.5 0.5 1 5 10 50 100 0 50 100 150
127
SMA5102 N-channel

Specification
Symbol Ratings Uni Symbol min typ max Unit Conditions
IFSM 8 (PW≤10ms, Single pulse) A Ciss 180 pF VDS=25V, f=1.0MHz,
4 (Ta=25°C, with all circuits operating, without heatsink) W ton 40 ns ID=4A, VDD 50V, VGS=10V,
PT
28 (Tc=25°C,with all circuits operating, with infinite heatsink) W toff 40 ns see Fig. 3 on page 16.
θ j–a 31.2 (Junction-Air, Ta=25°C, with all circuits operating) °C/W VSD 1.2 2.0 V ISD=4A, VGS=0V
θ j–c 4.46 (Junction-Case, Tc=25°C, with all circuits operating) °C/W trr 250 ns ISD=±100mA
Tch 150 °C
* : VDD=20V, L=1mH, ID=5A, unclamped, see Fig. E on page 15. Specification
VR 120 V IR=10µA
2 3 4 9 10 11 VF 1.0 1.2 V IF=1A
IR 10 µA VR=120V
1 5 8 12
6 7
(VDS=10V) (VDS=10V)
8 8 0.8
TC=–40°C
10V
7 7 25°C
6 125°C
6 0.6
7V
(Ω)
5 5
ID (A)
ID (A)
(ON)
4 4 0.4
RDS
6V
3 3
2 2 0.2
VGS=5V
1 1
0 0 0
0 10 20 0 2 4 6 8 10 0 1 2 3 4 5 6 7 8
ID=4A VGS=0V
(VDS=10V) VGS =10V f=1MHz
5 1.2 600
1.0 Ciss
Capacitance (pF)
Re (yfs) (S)
(Ω)
0.8
100
(ON)
Coss
1
0.6
RDS
50
TC=–40°C
25°C
0.4
0.5
125°C
Crss
0.2 10
0.2
0.05 0.5 1 5 8 0 5
0.1 150 0 10 20 30 40 50
–40 0 50 100
ID (A) VDS (V)
TC (°C)
8
(TC=25°C)
10 30
ID (pulse) max
10

0µ
s
1m

ED
s
10
6
IT
m
M
s
LI
(1
20
sh
5
N)
IDR (A)
ot
(O
ID (A)
PT (W)
)
W
S
RD
ith
In
4 1 15
fin
ite
He
3
at
sin
0.5 10
k
2
10V
VGS=0V 5 Without Heatsink
1
5V
0 0.1 0
0 0.5 1.0 1.5 0.5 1 5 10 50 100 0 50 100 150
128
SMA5103 N-channel + P-channel
H-bridge External dimensions B ••• SMA

Ratings
VDSS 60 –60 V
VGSS ±20 20 V
ID ±5 4 A
EAS* 2 — mJ
PT
θ j–a 31.2 (Junction-Air, Ta=25°C, with all circuits operating) °C/W
θ j–c 4.46 (Junction-Case, Tc=25°C, with all circuits operating) °C/W
Tch 150 °C
Tstg –40 to +150 °C

10 7
Pch 12 8
11 9
2 4
Nch 1 5
3 6
N-ch P-ch N-ch (VDS=10V)
10 –8 10
10V 7V –10V
8 8
–6
6 6V –7V 6
ID (A)
ID (A)
ID (A)
–4
4 4
TC=–40°C
–6V
25°C
–2
2 2 125°C
VGS=–4V
–5V
VGS=4V
0 0 0
0 2 4 6 8 10 0 –2 –4 –6 –8 –10 0 2 4 6 8

N-ch P-ch P-ch
(VGS=10V) (VGS=–10V) (VDS=–10V)
0.20 0.6 –8
TC=–40°C
0.5 25°C
0.15 –6 125°C
0.4
(Ω)
(Ω)
ID (A)
(ON)
(ON)
0.10 0.3 –4
RDS
RDS
0.2
0.05 –2
0.1
0 0 00
0 2 4 6 8 10 –2 –4 –6 –8 –10
0 –2 –4 –6 –8

VGS=10V VGS=–10V
0.3 1.0
0.8
(Ω)
0.2
(Ω)
0.6
(ON)
(ON)
RDS
RDS
0.4
0.1
0.2
0 0
–40 0 50 100 150 –40 0 50 100 150
TC (°C) TC (°C)
130
SMA5103
N channel P channel
N-ch (VDS=10V) P-ch (VDS=–10V) N-ch (TC=25°C)
10 5 20
ID (pulse) max 10
0µ
10 s
1m
5 ED 10 s
5 IT m
M
LI s
) (1
Re(yfs) (S)
(O
N sh
ot
ID (A)
Re (yfs) (S)
S )
D
R
1 TC=–40°C 1
TC=–40°C 25°C
1
25°C 0.5
125°C
125°C
0.5
0.5
0.3 0.3 0.1

0.08 0.5 1 5 10 –0.1 –0.5 –1 –5 –8 0.5 1 5 10 50 100

1000 700 –10
0µ
500 Ciss –5 s
1m
ED
Ciss
10
IT
Capacitance (pF)
M
Capacitance (pF)
m
LI
s
(1
N)
Coss
sh
(O
Coss
ot
S
)
ID (A)
RD
100
100 –1
50
50 –0.5
Crss
Crss
10 10 –0.1
0 10 20 30 40 50 0 –10 –20 –30 –40 –50 –0.5 –1 –5 –10 –50 –100

N-ch P-ch
10 –8 30

25 Natural Cooling
–6
20
–10V
IDR (A)
6
PT (W)
IDR (A)
W
ith
In
10V –4 15
fin
ite
He
4
at
s in
10
k
VGS=0V –2 –5V
5V
2
0 0 0
0 0.5 1.0 1.5 0 –1 –2 –3 –4 –5 0 50 100 150
131
3-phase motor drive External dimensions B ••• SMA

Ratings
VDSS 60 –60 V
VGSS ±20 20 V
ID ±5 4 A
EAS* 2 — mJ
PT
θ j-a 31.2 (Junction-Air, Ta=25°C, with all circuits operating) °C/W
Tch 150 °C
Tstg –40 to +150 °C

1
Pch 2 8 9
3 7 10
Nch 4 6 11
5 12
N-ch P-ch N-ch (VDS=10V)
10 –8 10
10V 7V –10V
8 8
–6
6 6V 6
ID (A)
–7V
ID (A)
ID (A)
–4
4 4
TC=–40°C
–6V
5V 25°C
–2
2 2 125°C
VGS=–4V –5V
VGS=4V
0 0 0
0 2 4 6 8 10 0 –2 –4 –6 –8 –10 0 2 4 6 8

N-ch P-ch P-ch
(VGS=10V) (VGS=–10V) (VDS=–10V)
0.20 0.6 –8
TC=–40°C
0.5 25°C
0.15 –6 125°C
(Ω)
0.4
(Ω)
(ON)
(ON)
ID (A)
0.10 0.3 –4
RDS
RDS
0.2
0.05 –2
0.1
0 0 0
0 2 4 6 8 10 0 –2 –4 –6 –8 0 –2 –4 –6 –8 –10

VGS=10V VGS=–10V
1.0
0.3
0.8
(Ω)
0.2
(Ω)
0.6
(ON)
(ON)
RDS
RDS
0.4
0.1
0.2
0 0
–40 0 50 100 150 –40 0 50 100 150
TC (°C) TC (°C)
132
SMA5104
N channel P channel
N-ch (VDS=10V) P-ch (VDS=–10V) N-ch (TC=25°C)
10 5 20
ID (pulse) max 10
0µ
10 s
5 1m
ED 10
IT s
5 M m
LI s
(1
Re (yfs) (S)
)
N sh
(O
Re (yfs) (S)
S ot
R
D )
ID (A)
1 TC=–40°C 1
TC=–40°C
1 25°C
25°C 0.5
125°C
125°C
0.5
0.5
0.3 0.3 0.1

0.08 0.5 1 5 10 –0.1 –0.5 –1 –5 –8 0.5 1 5 10 50 100

N-ch VGS=0V P-ch VGS=0V
P-ch
1000 700 –10
0µ
500 Ciss –5 1m s
s
Ciss
ED
10
Capacitance (pF)
IT
Capacitance (pF)
m
M
s
LI
(1
Coss
N)
sh
Coss
(O
ot
ID (A)
)
RD
100
100 –1
50
50 –0.5
Crss
Crss
10 10 –0.1
0 10 20 30 40 50 0 –10 –20 –30 –40 –50 –0.5 –1 –5 –10 –50 –100

N-ch P-ch
10 –8 30

25 Natural Cooling
–6
20
6 –10V
IDR (A)
PT (W)
IDR (A)
W
ith
–4 15
In
10V
fin
ite
He
4
at
sin
10
k
–5V
VGS=0V –2
2 5V
0 0 0
0 0.5 1.0 1.5 0 –1 –2 –3 –4 –5 0 50 100 150
133
SMA5105 N-channel

Specification
IF 5 (PW≤0.5ms, Du≤25%) A 0.27 0.30 Ω VGS=10V, ID=2.5A
RDS(ON)
IFSM 10 (PW≤10ms, Single pulse) A 0.38 0.41 Ω VGS=4V, ID=2.5A
PT
28 (Tc=25°C, with all circuits operating, with infinite heatsink) W ton 70 ns ID=5A, VDD 50V, VGS=5V,
θ j–a 31.2 (Junction-Air, Ta=25°C, with all circuits operating) °C/W toff 50 ns see Fig. 3 on page 16.
θ j–c 4.46 (Junction-Case, Tc=25°C, with all circuits operating) °C/W VSD 1.2 2.0 V ISD=5A, VGS=0V
Tch 150 °C trr 330 ns ISD=±100mA
Tstg –40 to +150 °C
●Diode for flyback voltage absorption (1 circuit)
Specification
VR 120 V IR=10µA
2 3 4 9 10 11
VF 1.0 1.2 V IF=1A
IR 10 µA VR=120V
1 5 8 12 trr 100 ns IF=±100mA
6 7
(VDS=10V)
10 10 0.4
10V
4V
8 8
0.3 VGS=4V
(Ω)
6 3.5V 6 VGS=10V
ID (A)
ID (A)
(ON)
0.2
RDS
4 4
3V TC=–40°C
25°C
0.1
2 2 125°C
VGS=2.5V
0 0 0
0 2 4 6 8 10 0 1 2 3 4 5 0 1 2 3 4 5 6 7 8 9 10
VGS=0V
10 0.6 2000
1000
5 0.5
Ciss
500
Capacitance (pF)
0.4 VGS=4V
Re (yfs) (S)
(Ω)
(ON)
0.3 Coss
TC=–40°C VGS=10V 100
RDS
1 25°C
0.2
50
125°C
Crss
0.5 0.1
0.3 0 10
0.05 0.1 0.5 1 5 10 –40 0 50 100 150 0 10 20 30 40 50

(TC=25°C)
10 20 30
ID (pulse) max 10
10 s
25 Natural Cooling
1m
8 s All Circuits Operating
D 10
5 I TE m
M s
LI (1 20
sh
)
ot
N
(O
6 )
IDR (A)
PT (W)
W
S
ID (A)
ith
R
In
15
fin
ite
1
He
4
at
sin
10V 10
k
0.5
2 4V
5 Without Heatsink
VGS=0V
0 0
0.1
0 0.5 1.0 1.5 0.5 1 5 10 50 100 0 50 100 150
Ta (°C)
VSD (V) VDS (V)
134
SMA5106 N-channel

Specification
IF 4 (PW≤0.5ms, Du≤25%) A 0.47 0.55 Ω VGS=10V, ID=2A
RDS(ON)
IFSM 8 (PW≤10ms, Single pulse) A 0.60 0.78 Ω VGS=4V, ID=2A
PT
28 (Tc=25°C,with all circuits operating, with infinite heatsink) W ton 60 ns ID=4A, VDD 50V, VGS=10V,
θ j–a 31.2 (Junction-Air, Ta=25°C, with all circuits operating) °C/W toff 50 ns see Fig. 3 on page 16.
θ j–c 4.46 (Junction-Case, Tc=25°C, with all circuits operating) °C/W VSD 1.2 2.0 V ISD=4A, VGS=0V
Tch 150 °C trr 250 ns ISD=±100mA
Tstg –40 to +150 °C
●Diode for flyback voltage absorption
Specification
VR 120 V IR=10µA
2 3 4 9 10 11
VF 1.0 1.2 V IF=1A
IR 10 µA VR=120V
1 5 8 12 trr 100 ns IF=±100mA
6 7
(VDS=10V)
8 8 0.8
10V
7 7
4.5V VGS=4V
6 6 0.6
(Ω)
5 5
ID (A)
VGS=10V
4V
ID (A)
TC=–40°C
(ON)
4 4 25°C 0.4
RDS
125°C
3 3.5V 3
2 2 0.2
VGS=3V
1 1
0 0 0
0 2 4 6 8 10 0 2 4 6 8 0 1 2 3 4 5 6 7 8
VGS=0V
7 1.2 700
500
5
Ciss
1.0
Capacitance (pF)
VGS=4V
0.8
Re (yfs) (S)
(Ω)
100 Coss
(ON)
0.6
50
RDS
TC=–40°C VGS=10V
1
25°C 0.4
125°C
Crss
0.5 0.2 10
0.3 0 5
0.05 0.1 0.5 1 5 8 –40 0 50 100 150 0 10 20 30 40 50

(TC=25°C)
8 10 30
ID (pulse) max
10

0µ
5 Natural Cooling
s
1m
25
10

s
ED
6
IT
s
M
(1
LI
sh
20
ot
N)
5
)
(O
IDR (A)
PT (W)
S
RD
W
ID (A)
ith
4 15
In
1
fin
ite
He
3
at
0.5
sin
10
k
2 10V
5 Without Heatsink
1 4V VGS=0V
0 0.1 0
0 0.5 1.0 1.5 0.5 1 5 10 50 100 0 50 100 150
135
SMA5112
N-channel
3-phase DC motor 100V AC direct drive External dimensions B ••• SMA

Specification
4 (Ta=25°C, with all circuits operating, without heatsink) W RDS(ON) 0.4 0.5 Ω VGS=10V, ID=3.5A
PT
θ j-a 31.2 (Junction-Air, Ta=25°C, with all circuits operating) °C/W Coss 280 pF VGS=0V
Tstg –40 to +150 °C td(off) 55 ns RL=28.6Ω, VGS=10V,
2 8 9
4 6 11
3 7 10
5 12
(VDS=10V) (VGS=10V)
7 0.5
6V 7
10V
5.5V
6
6
0.4
5
5
(Ω)
0.3
ID (A)
4 5V
ID (A)
4
RDS (ON)
3 3 0.2
2 2
4.5V
40°C
0.1
°C
1
TC=–
1
125
C
25°
VGS=4V
0 0
0 2 4 6 8 10 0
0 2 4 6 8 0 1 2 3 4 5 6 7

ID=3.5A VGS=0V
10 1.0 2000
1000
5 0.8 500 Ciss

°C
40
Capacitance (pF)
=–
TC 5°C
(Ω)
Re (yfs) (S)
2
5°
C 0.6
12
(ON)
100 Coss
50
RDS
0.4
1
10
0.2
0.5 5
Crss
0.3 0 2
0.05 0.1 0.5 1 5 7 –40 0 50 100 150 0 10 20 30 40 50
(TC=25°C)
7 20 40
ID (pulse) max
10 0µ 35 Natural Cooling
6 s
1m
5 s 30
5 10
m
s
(1 25
IDR (A)
RDS (ON) LIMITED sh

PT (W)
4
ID (A)
ot
)
W
ith
1 20
In
fin
3
ite
He
0.5 15
at
s
in
2
k
VGS=0V
10
5.10V
1
0.1 5 Without Heatsink
0 0.05 0
0 0.5 1.0 1.5 3 5 10 50 100 500 0 50 100 150
136
SMA5114
N-channel

Specification
VGSS ±20 V IGSS ±10 µA VGS=±20V
EAS* 6.8 mJ Re(yfs) 1.0 2.3 S VDS=10V, ID=1.0A
IAS 3 A 0.20 0.25 Ω VGS=10V, ID=1.0A
RDS(ON)
4 (Ta=25°C, with all circuits operating, without heatsink) W 0.25 0.30 Ω VGS=4V, ID=1.0A
PT
θ j–a 31.2 (Junction-Air, Ta=25°C, with all circuits operating) °C/W Coss 130 pF f=1.0MHz,
θ j–c 4.46 (Junction-Case, Tc=25°C, with all circuits operating) °C/W Crss 20 pF VGS=0V
* : VDD=20V, L=1mH, IL=3A, unclamped, see Fig. E on page 15. td(off) 330 ns RL=30Ω, VGS=5V,
■Equivalent circuit diagram VSD 1.0 1.5 V ISD=3A, VGS=0V
2 3 4 9 10 11
●Diode for flyback voltage absorption
Specification
1 5 8 12 VR 120 V IR=10µA
VF 1.0 1.2 V IF=1A
6 7 IR 10 µA VR=120V
(VDS=10V)
3 3 0.5
10V
3.4V
0.4
2 2
(Ω)
0.3 VGS=4V
3.2V
ID (A)
ID (A)
(ON)
10V
RDS
25°C 0.2
3V
1 1
40°C
TC=–
VGS=2.8V 0.1
°C
125
0 0 0
0 2 4 6 8 10 0 1 2 3 4 5 0 1 2 3

VGS=0V
10 500
0.5
Ciss
5
0.4
100
Capacitance (pF)
Coss
S=
4V
VG
Re (yfs) (S)
(Ω)
50
TC=–40°C
0.3
(ON)
25°C 10V
RDS
1 0.2 10
125°C 5
0.5
0.1 Crss
0.2 0 1
0.05 0.1 0.5 1 3 –40 0 50 100 150 0 10 20 30 40 50
ID (A) VDS (V)
TC (°C)
(TC=25°C)
3 10 30
ID (pulse) max 10
5 s
25 Natural Cooling
10 s
RDS (ON) LIMITED m
2 s 20
(1
sh
ot
IDR (A)
ID (A)
PT (W)
1 )
W
ith
VGS=0V
In
15
fin
ite
0.5
He
at
5V
sin
1 10
k
5 Without Heatsink
0.1
0 0.05 0
0 0.5 1.0 1.5 0.5 1 5 10 50 100 0 50 100 150
137
SMA5117
N-channel

Specification
PT
35 (Tc=25°C, with all circuits operating, with infinite heatsink) W Ciss 850 pF VDS=10V,
θ j–a 31.2 (Junction-Air, Ta=25°C, with all circuits operating) °C/W Coss 550 pF f=1.0MHz,
θ j–c 3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/W Crss 250 pF VGS=0V
Tch 150 °C td(on) 20 ns ID=3.5A,
* : VDD=25V, L=4.4mH, ID=7A, unclamped, RG=50Ω, see Fig. E on page 15. td(off) 90 ns RL=28.6Ω, VGS=10V,
■Equivalent circuit diagram VSD 1.1 1.5 V ISD=7A, VGS=0V
trr 85 ns ISD=3.5A, VGS=0V, di/dt=100A/µs
1
2 8 9
4 6 11
3 7 10
5 12
(VDS=10V) (VGS=10V)
7 7 0.3
10V
6 6V
6
5.5V 0.25
5V
5 5
0.2
(Ω)
ID (A)
4
ID (A)
4
(ON)
0.15
RDS
3 3
25°C
0.1
2 4.5V 2 125°C
TC=–40°C 0.05
1a 1
VGS=4V
0 0 0
0 2 4 6 8 10 0 2 4 6 8 0 1 2 3 4 5 6 7

ID=3.5A VGS=0V
20 0.5 3000
10
0.4 1000
Ciss
Capacitance (pF)
5 °C 500
40
Re (yfs) (S)
(Ω)
=–
Tc 0.3
(ON)
Coss
RDS
°C 0.2
25 100
5°
C
1 12
50
0.1 Crss
0.5
0.3 0 10
0.05 0.1 0.5 1 5 7 –40 0 50 100 150 0 10 20 30 40 50
(VGS=0V) (TC=25°C)
7 30 40
10
6 10 s
5 10 s
m
s 30
(1
5 sh
ot
)
RDS (ON) LIMITED 25
IDR (A)
PT (W)
4 1
ith
ID (A)
In
0.5 20
fin
ite
3
He
at
15
sin
k
2 0.1
10
0.05
0 0.01 0
0 0.5 1.0 1.5 0.5 1 5 10 50 100 500 0 50 100 150
138
SMA5118 N-channel

Specification
PT
θ j–a 31.2 (Junction-Air, Ta=25°C, with all circuits operating) °C/W Coss 290 pF f=1.0MHz, VGS=0V
θ j–c 3.57 (Junction-Case, Tc=25°C, with all circuits operating) °C/W td(on) 20 ns ID=2.5A,
■Equivalent circuit diagram trr 75 ns ISD=2.5A, di/dt=100A/µs
2 8 9
4 6 11
3 7 10
5 12
(VDS=20V) (VGS=10V)
5 5 2.0
5V
4 4
10V
1.5
(ON) (Ω)
3 3
ID (A)
ID (A)
4.5V
1.0
RDS
2 2
TC=125°C
25°C
–40°C 0.5
1 4V 1
VGS=3.5V
0 0 0
0 5 10 15 20 0 2 4 6 0 1 2 3 4 5

ID=2.5A VGS=0V
10 3.0 2000
5 1000
2.5 Ciss
°C
40
=– °C
Ta 25 500
5°C
Capacitance (pF)
12 2.0
Re (yfs) (S)
(ON) (Ω)
1.5
RDS
100
1 Coss
1.0
50
0.5
0.5
Crss
0.2 0 10
0.05 0.1 0.5 1 5 –40 0 50 100 150 0 10 20 30 40 50

(Ta=25°C) 20
(TC=25°C)
5 40
ID (pulse) max With Silicon Grease
4
5 ED
IT 30
M 10
LI 0µ
N) s
(O
W
DS 25
R
ith
3 1m
PT (W)
IDR (A)
In
s
ID (A)
fin
ite
1 20
H
ea
ts
in
2 0.5
k
15
10
1
0.1 5 Without Heatsink
0 0.05 0
0 0.5 1.0 1.5 3 5 10 50 100 600 0 50 100 150
139

Ratings
VDSS 60 –60 V
VGSS ±20 ±20 V
ID 10 –10 A
PT
Tch 150 °C
Tstg –40 to +150 °C

1
Pch 2 8 9
3 7 10
Nch 4 6 11
5 12
15 –15 15
4.0V
14 –14 –4.0V 14
10V
–10V
12 –12 12
10 –10 10
3.5V
ID (A)
–3.5V
ID (A)
ID (A)
8 –8 8
3.3V
–3.3V
6 –6 6
4 3.0V –3.0V
–4 4
VGS=–2.7V 2 Tc=125°C 25°C

2 VGS=2.7V –2
–40°C
0 0 0
0 2 4 6 8 10 0 –2 –4 –6 –8 –10 0 1 2 3 4 5

N-ch Ta=25°C P-ch Ta=25°C P-ch
VGS=4V VGS=–10V (VDS=–10V)
0.20 0.20 –15
–14
0.16 0.16 –12
–10
(ON) (Ω)
(ON) (Ω)
0.12 0.12
ID (A)
–8
RDS
RDS
0.08 0.08 –6 Tc=40°C
–4 25°C
0.04 0.04
–40°C
–2
0 0 0
0 2 4 6 8 10 12 14 15 0 –2 –4 –6 –8 –10 –12 –14 –15 0 –1 –2 –3 –4 –5

0.20
VGS=4V 0.20
VGS=–10V
0.16 0.16
(ON) (Ω)
(ON) (Ω)
0.12 0.12
RDS
RDS
0.08 0.08
0.04 0.04
0 0
–40 0 50 100 150 –40 0 50 100 150
TC (°C) TC (°C)
140
SMA5125
N channel P channel
IGSS ±10 µA VGS=±20V ±10 µA VGS=±20V
Re(yfs) 8.0 S VDS=10V, ID=5A 8.7 S VDS=–10V, ID=–5A
Ciss 460 pF VDS=10V, 1200 pF VDS=–10V,
td (on) 25 ns ID=5A, VDD 20V, 50 ns ID=–5A, VDD –20V,
tr 110 ns RL=4Ω, VGS=5V, 170 ns RL=4Ω, VGS=–5V,
td (off) 90 ns RG=50Ω, 180 ns RG=50Ω,
tf 55 ns see Fig.3 on page 16. 100 ns see Fig.4 on page 16.
VSD 1.15 ns ISD=10A, VGS=0V –1.25 V ISD=–10A, VGS=0V
trr 75 V ISD=5A, di/dt=100A/µs 100 ns ISD=–5A, di/dt=100A/µs
N-ch (VDS=10V) P-ch (VDS=–10V) N-ch
20 20 20
100µs
10 10 10
1m
ED
s
IT
10
Tc=–40°C
M
ms
Re (yfs) (S)
Re (yfs) (S)
LI
Tc=40°C
N)
(O
S
RD
25°C
ID (A)
25°C
1 1 1
125°C
125°C
Single Pulse
Tc=25°C
0.1 0.1 0.1
0.05 0.1 1 10 20 –0.05 –0.1 –1 –10 –20 0.1 1 10 100

(Ta=25°C) f=1MHz (Ta=25°C) f=1MHz
5000 5000 –20
100µs
–10
1m
s
Ciss
ED
10
1000 1000
m
IT
s
Capacitance (pF)
Capacitance (pF)
M
LI
N)
Ciss
(O
S
RD
ID (A)
Coss
Coss –1
100 100
Crss
Crss
Single Pulse
Tc=25°C
10 10 –0.1
0 10 20 30 40 50 0 –10 –20 –30 –40 –50 –0.1 –1 –10 –100

N-ch P-ch
(Ta=25°C) (Ta=25°C) All Circuits Operating
15 –15 40
14 –14
35
12 –12
30
V
10
–10
S=
10
25
VG
IDR (A)
4V
IDR (A)
PT (W)
W
8 –8 ith
0V
20 In
0V
fin
0V
–1
ite
S=
–4
He
VG
6 –6 at
15 sin
k
4 –4 10
2 –2 5 Without Heatsink
0 0 0
0.0 0.5 1.0 1.5 0.0 –0.5 –1.0 –1.5 0 50 100 150
141

Ratings
VDSS 60 –60 V
VGSS ±20 20 V
ID 4 –4 A
ID(pulse) 8 (PW≤1ms, Duty≤1%) –8 (PW≤1ms, Duty≤1%) A
PT
Tch 150 °C
Tstg –40 to +150 °C

1
Pch 2 8 9
3 7 10
Nch 4 6 11
5 12
N-ch P-ch N-ch
(Ta=25°C) (Ta=25°C) (VDS=10V)
8 –8 8
4.5V Ta=–40°C
10V
7
V
–10
25°C
6 –6 –4.5V 125°C
6
4.0V
5
ID (A)
ID (A)
ID (A)
–4.0V
4 –4 4
3.5V
–3.6V
3
2 VGS=3.0V –2 –3.2V 2
VGS=–2.7V 1
0 0 0
0 2 4 6 8 10 0 –2 –4 –6 –8 –10 0 1 2 3 4 5 6 7

N-ch P-ch P-ch
(Ta=25°C) (Ta=25°C) (VDS=–10V)
0.6 0.6 –8
Tc=–40°C
VGS=–4V
0.5 0.5
–6
=4V 25°C
VGS
0.4 0.4
(ON) (Ω)
(ON) (Ω)
–10V 125°C
10V
ID (A)
0.3 0.3 –4
RDS
RDS
0.2 0.2
–2
0.1 0.1
0 0 0
0 1 2 3 4 5 6 7 8 0 –2 –4 –6 –8 0 –1 –2 –3 –4 –5 –6 –7

ID=–2A
N-ch ID=2A P-ch VGS=–10V
VGS=4V 0.8
0.8
0.7 0.7
0.6
(ON) (Ω)
0.6
(ON) (Ω)
0.5
0.5
RDS
RDS
0.4
0.4
0.3
0.3
0.2 0.2
–40 –25 0 25 50 75 100 125 150
–40 –25 0 25 50 75 100 125 150
Ta (°C)
Ta (°C)
142
SMA5127
N channel P channel
IGSS ±10 µA VGS=±20V 10 µA VGS= 20V
Ciss 150 pF VDS=10V 320 pF VDS=–10V,
Coss 70 pF f=1.0MHz 130 pF f=1.0MHz,
td (on) 12 ns 20 ns
ID=2A, VDD 20V, ID=–2A, VDD –20V,
tr 40 ns 95 ns
td (off) 40 ns 70 ns
see Fig.3 on page 16. see Fig.4 on page 16.
tf 25 ns 60 ns
trr 75 ns 75 ns
N-ch (VDS=10V) P-ch (VDS=–10V)
N-ch
5 (Tc=25°C)
5 10
Ta=–40°C
Tc=–40°C 100µs
25°C 1ms
10ms
Re (yfs) (S)
Re (yfs) (S)
RDS (on) LIMITED

25°C 1
1 125°C
ID (A)
1
125°C
0.1 0.1 0.1

0.01 0.1 1 8 –0.05 –0.1 –1 –8 1 10 100

N-ch VGS=0V P-ch VGS=80V
P-ch
NPN PNP
(Ta=25°C) f=1MHz (Ta=25°C) f=1MHz (Tc=25°C)
1000 1000 –10 100µs
1ms
Ciss
Capacitance (pF)
10ms
Capacitance (pF)
Ciss RDS (ON) LIMITED

ID (A)
100 100 Coss

–1
Coss
Crss
10 10
Crss
5 5 –0.1
0 10 20 30 40 50 0 –10 –20 –30 –40 –50 –1 –10 –100
VIDS -VGS
DR-V SD Characteristics (Typical) PT-Ta Characteristics
N-ch P-ch
5
(Ta=25°C) (Ta=25°C) 30
–5
With Silicon Grease

25 Natural Cooling
4 –4 All Circuits Operating
20
W
ith
3 –3
VDS (V)
In
PT (W)
VDS (V)
fin
ite
15
He
at
sin
–2
k
2
10
ID=4A
1 –1
5 Without Heatsink
2A
0 0 0
2 10 20 –2 –10 –20 0 50 100 150
VGS (V) VGS (V) Ta (°C)
143
SMA6010 PNP + NPN Darlington

Ratings
Symbol NPN PNP Unit
VCBO 60 –60 V
VCEO 60 –60 V
VEBO 6 –6 V
IC 4 –4 A
IB 0.5 –0.5 A
4 (Ta=25°C)
PT W
20 (Tc=25°C)
Tj 150 °C
Tstg –40 to +150 °C
θ j–c 6.25 °C/W

1
R3 R4
2 8 9
3 7 10
4 6 11
R1 R2
5 12
6 –6 6
IB=–2.2mA –1.8mA
IB=4.0mA 2.0mA
–1.5mA
–1.2mA 5
1.2mA
–1.0mA
4 0.8mA –4 –0.9mA 4
IC (A)
IC (A)
–0.8mA
IC (A)
0.6mA
3
0.5mA 75°C
0.4mA 25°C
2 –2 2
°C
125
Ta=
–30°C
0 0 0
0 2 4 6 0 –2 –4 –6 0 1 2 3

20000 20000
–6
10000 10000
typ
–5
5000 5000 typ
–4
IC (A)
hFE
hFE
1000 1000 –3 75°C
500 25°C
500
–2
25°C
–30°C
Ta=1
–1
100 100
50 50 0
0.03 0.05 0.1 0.5 1 56 –0.03 –0.05 –0.1 –0.5 –1 –5 –6 0 –1 –2 –3

20000 20000
10000 10000
5000 5000
°C
25 °C
=1 25
Ta =1
75°C Ta
1000 1000
hFE
25°C
0°
hFE
C
500 0°
C 500 –3
–3
75°C
25°C
100 100
50 50
0.03 0.05 0.1 0.5 1 56 –0.03 –0.05 –0.1 –0.5 –1 –5 –6
IC (A) IC (A)
144
SMA6010
NPN PNP
VCE(sat) 1.5 V –1.5 V
VBE(sat) 2.0 V –2.0 V
VFEC 1.8 V IFEC=1A –1.8 V IFEC=–1A
fT 75 MHz VCE=12V, IE=–0.1A 200 MHz VCE=–12V, IE=0.2A
NPN PNP
3 –3 20
10
2 –2
VCE (sat) (V)
θ j–a (°C / W)
VCE (sat) (V)
IC=4A
IC=–4A
IC=2A
1 –1 IC=–2A
IC=1A IC=–1A
0 0 0.5
1 5 10 50 100 500 1000
0.2 0.5 1 5 10 50 100 200 –0.3 –0.5 –1 –5 –10 –50 –100 –200
PW (mS)
IB (mA) IB (mA)

NPN (IC / IB=1000) PNP (IC / IB=1000)
3 20
–3
25°C
75°C
15
2
VCE (sat) (V)
–2
VCE (sat) (V)
°C
ith
125
Inf
PT (W)
init
Ta =
eH
25°C 10
°C
ea
0
–3
tsin
75°C
k
1 –1 Ta=–30°C
5
Without Heatsink
125°C
0 0 0
0.5 1 5 6 –40 0 50 100 150
–0.5 –1 –5 –6
IC (A) Ta (°C)
IC (A)

NPN PNP
10 –10
5 –5
1m
1m
10
s
s
10
m
s
m
s
1 –1
IC (A)
IC (A)
0.5 –0.5
0.1 –0.1
Ta=25°C Ta=25°C
0.03 –0.03
3 5 10 50 100 –3 –5 –10 –50 –100
VCE (V) VCE (V)
145
SMA6014 PNP + NPN Darlington

Ratings
Symbol NPN PNP Unit
VCBO 60 –60 V
VCEO 60 –60 V
VEBO 6 –6 V
IC 2 –2 A
IB 0.5 –0.5 A
4 (Ta=25°C)
PT W
20 (Tc=25°C)
Tj 150 °C
Tstg –40 to +150 °C
θ j–c 6.25 °C/W

1
R1 R2
2 8 9
3 7 10
4 6 11
R3
5 12
6 –4 3
IB=4.0mA
mA
2.0
A
1.0mA
.0m
A
m
–2.0mA
.0
–10
–5
–3
IB=
0.6mA
4 2
–1.2mA
–1.0mA
IC (A)
IC (A)
IC (A)
0.4mA –0.8mA
–2
–0.6mA
0.3mA –0.5mA
25°C
2 1
–0.4mA
Ta=1
–1
75°C
–0.3mA
C
25°
°C
–30
0 0 0
0 2 4 6 0 –1 –2 –3 –4 –5 –6 0 1 2

20000 5000 –3
10000 typ
typ
5000
–2
1000
IC (A)
hFE
hFE
500
1000
500 –1
75° °C
125
C
C
Ta=
25°
°C
100
–30
100 50 0
0.03 0.05 0.1 0.5 1 3 –0.02 –0.05 –0.1 –0.5 –1 –3 0 –1 –2 –3

20000 10000
10000 5000
75°C
25°C
5000
°C
25
°C =1
25 Ta
=1 1000
Ta
°C
hFE
hFE
75
0°
°C C
1000 25 500 –3
0°
C
–3
500
100
100 50
0.03 0.05 0.1 0.5 1 3 –0.02 –0.05 –0.1 –0.5 –1 –3
IC (A) IC (A)
146
SMA6014
NPN PNP
VCE(sat) 1.5 V –1.5 V
VBE(sat) 2.2 V –2.2 V
VFEC — V –1.8 V IFEC=–1A
trr — µs 3.0 µs IFEC=±100mA
fT 20 MHz VCE=12V, IE=–1A 100 MHz VCE=–12V, IE=0.1A
NPN PNP (IC=–1A) NPN
2 –3 20
10
Ta=125°C
VCE (sat) (V)
–2
θ j–a (°C / W)
VCE (sat) (V)
–30°C
75°C
25°C
IC=2A
1
IC=1A
–1
0 0.5
0 –0.1 –0.5 –1 –3 1 5 10 50 100 500 1000
0.1 0.5 1 5 10
VCE(sat)-IC Temperature Characteristics (Typical)

NPN (IC / IB=1000) PNP (IC / IB=1000) PNP
2 –3 20
10
VCE (sat) (V)
VCE (sat) (V)
–2
θ j–a (°C / W)
–30°C
1 –30°C
75°C 25°C
°C –1
Ta=125 25°C 75°C
Ta=125°C
0 0.5
0 0.2 0.5 1 5 10 50 100 500 1000
0.5 1 3 –0.2 –0.5 –1 –3
IC (A) IC (A) PW (mS)
Safe Operating Area (SOA) PT-Ta Characteristics

NPN PNP
5 –5 20
10
0µ
s
1m
1m
10
100µs
s
10
s
ms
15
m
s
1 –1
W
ith
PT (W)
Inf
0.5 –0.5
IC (A)
init
IC (A)
10
eH
ea
tsin
k
5
0.1 –0.1 Without Heatsink

Ta=25°C Ta=25°C 0
0.03 –0.03 –40 0 50 100 150
3 5 10 50 100 –3 –5 –10 –50 –100
VCE (V) VCE (V) Ta (°C)
147
SMA6511 Stepper motor driver with
dual supply voltage switch External dimensions B ••• SMA

Ratings
Symbol NPN PNP Unit
VCBO 100±15 –60 V

VCEO 100±15 –60 V
VEBO 6 –6 V
ICP 1.5 –3 A
IB 0.5 –0.5 A
4 (Ta=25°C)
PT W
20 (Tc=25°C)
Tj 150 °C
Tstg –40 to +150 °C
12
R3 R4
10
11
2 4 7 9
1 3 6 8
R1 R2
5
3 –3 3
mA
A
5mA 2mA mA
0.0m
1mA
–2.0
–5.0
0.5mA
–1.2mA
IB=–1
–1.0mA
2 0.3mA –2 –0.8mA 2
–0.6mA
IC (A)
IC (A)
IC (A)
–0.5mA
–0.4mA
1 0.2mA –1 1
°C
75°C
–0.3mA
25°C
125
–30°C
Ta=
0
0
0 1 2 3 4 5 6 0 –1 –2 –3 –4 –5 –6 0 1 2 3

20000 5000 –3
typ
10000
typ
5000
1000 –2
IC (A)
hFE
1000
hFE
500 75°C
500
–1
°C
125
Ta=
100
°C
100
C
–30
25°
50 50
0.03 0.05 0.1 0.5 1 3 0
–0.02 –0.05 –0.1 –0.5 –1 –3 0 –1 –2 –3

20000 10000
75°C
10000 25°C
5000
5000
°C °C
25 25
=1 °C
Ta 75 °C 1000 =1
Ta
hFE
25
hFE
1000
0°
C
0°
–3 C
500 –3
500
100 100
50 50
0.03 0.05 0.1 0.5 1 3 –0.02 –0.05 –0.1 –0.5 –1 –3
IC (A) IC (A)
148
SMA6511
NPN PNP
VCEO 85 100 115 V IC=10mA –60 V IC=–10mA
NPN PNP (IC=–1A) NPN
–3
3 20
10
–2
25°C
2
75°C
Ta=125°C
VCE (sat) (V)
VCE (sat) (V)
θ j–a (°C / W)
–30°C
IC=2A
1 IC=1A –1
0 0 1
0.1 0.5 1 5 10 50 100 –0.1 –0.5 –1 –5 1 5 10 50 100 500 1000

3 –3 20
10
2 –2
θ j–a (°C / W)
5
(V)
VCE (sat) (V)

(sat)
25°C
30°C
VCE
75°C
25°C Ta=–
Ta=–30°C
1 –1 75°C
125°C 125°C 1
0 0 0.5
0.3 0.5 1 3 –0.2 –0.5 –1 –3 0.2 0.5 1 5 10 50 100 500 1000
IC (A) PW (mS)
IC (A)

NPN PNP
1.5 –5 20
1
–3
10
100µs
50µs
1ms
0µ
10m
15
1m
0.5
s
W
10
ith
ms
–1
PT (W)
Inf
IC (A)
IC (A)
init
10
eH
ea
–0.5
tsin
k
0.1
5
Without Heatsink
Single Pulse
0.05 Single Pulse
Ta=25°C Ta=25°C
0.03 –0.1 0
3 5 10 50 100 200 –3 –5 –10 –50 –100 –40 0 50 100 150
149
SMA6512
Stepper motor driver with
dual supply voltage switch External dimensions B ••• SMA

Ratings
Symbol NPN PNP Unit
VCBO 60±10 –60 V

VCEO 60±10 –60 V
VEBO 6 –6 V
ICP 1.5 –3 A
IB 0.5 –0.5 A
4 (Ta=25°C)
PT W
20 (Tc=25°C)
Tj 150 °C
Tstg –40 to +150 °C

12
R3 R4
10
11
2 4 7 9
1 3 6 8
R1 R2
5
R1: 3.5kΩ typ R2: 200Ω typ R3: 4kΩ typ R4: 100Ω typ
3 3
–3
A
mA
mA
A
0m mA
0.0m
5. 2.0 –2.0
–5.0
mA –1.2mA
I B= – 1
1.0
A –1.0mA
A
0.6m
0.0m
2 A –2 –0.8mA 2
IB = 1
0.4m
Ta=125°C
–0.6mA
IC (A)
IC (A)
3mA
IC (A)
0.
–0.5mA 75°C
–0.4mA
1 –1 1 25°C
–0.3mA –30°C
0 0 0
0 1 2 3 4 5 6 0 –1 –2 –3 –4 –5 –6 0 1 2 3

20000 5000 –3
10000 typ
5000 typ
1000 –2
IC (A)
1000
hFE
hFE
500 75°C
500
–1
°C
125
Ta=
100
100
°C
C
–30
25°
50
30 50 0
0.02 0.05 0.1 0.5 1 3 –0.02 –0.05 –0.1 –0.5 –1 –3 0 –1 –2 –3

20000 10000
25°C
10000
5000 75°C
5000
°C
25
1000 °C 1000 =1
25 C
hFE
Ta
hFE
=1 75° C
Ta °
500 25 °C 500 0°
C
0 –3
–3
100
100
50
30
0.02 0.05 0.1 0.5 1 3 50
–0.02 –0.05 –0.1 –0.5 –1 –3
IC (A) IC (A)
150
SMA6512
NPN PNP
VCEO 50 60 70 V IC=10mA –60 V IC=–10mA
NPN (IC=1A) PNP (IC=–1A) NPN
3 –3 30
–30°C
75°C
25°C
Ta=125°C
10
–30°C
25°C
–2
Ta=125°C
2
75°C
VCE (sat) (V)
θ j–a (°C / W)
VCE (sat) (V)
1 –1
0 0 0.5
0.1 0.5 1 5 –0.1 –0.5 –1 –5 0.2 0.5 1 5 10 50 100 500 1000

3 –3 20
°C
–30°C
75°C
25°C
Ta=125
10
VCE (sat) (V)
2 –2
θ j–a (°C / W)
5
VCE (sat) (V)
30°C
25°C Ta=–
1 –1 75°C
125°C
1
0 0 0.5
0.2 0.5 1 3 –0.2 –0.5 –1 –3 0.2 0.5 1 5 10 50 100 5001000

NPN PNP
1.5 –5 20
1m
100µs
s
10m
1 –3
10
s
0µ
15
s
1m
0.5
s
ith
10
Inf
–1
PT (W)
ms
init
IC (A)
IC (A)
eH
10
ea
tsin
–0.5
k
5
Without Heatsink
0.1
Ta=25°C Ta=25°C 0
0.05 –0.1 –40 0 50 100 150
3 5 10 50 100 –3 –5 –10 –50 –100
151
STA301A NPN Darlington
With built-in avalanche diode External dimensions C ••• STA (8-pin)

Specification

3 (Ta=25°C) ton 1.0 µs VCC 30V,
PT W
15 (Tc=25°C) tstg 4.0 µs IC=3A,
Tj 150 °C tf 1.5 µs IB1=–IB2=10mA
Tstg –40 to +150 °C
3 5 7
2 4 6
R1 R2
1
8
(VCE=4V) (VCE=4V)
5 20000 20000
mA
2.0
IB= 10000 10000
4 1.0mA typ
5000
0.8mA 5000
0.6mA
3 °C
0.5mA 25
IC (A)
=1
hFE
hFE
1000 Ta °C
25
0.4mA 1000
0°
C
2 500 –3
500
1 0.3mA
100
100
0 50
0 1 2 3 4 0.05 0.1 0.5 1 4 0.05 0.1 0.5 1 4
(IC / IB=1000) (VCE=4V)
2 3 4
3
2
VCE (sat) (V)
VCE (sat) (V)
IC (A)
Ta=–30°C
1 2
IC=4A
25°C
25°C IC=3A
75°C
25°C
IC=2A
–30°C
Ta=1
125°C 1
IC=1A 1
0 0 0
0.1 0.5 1 4 0.2 0.5 1 5 10 50 100 0 1 2

30 16 10
Natural Cooling
14 5
Heatsink: Aluminum
1m
in mm
s
12
10
10
W
ms
ith
θ j–a (°C / W)
Inf
10
init
PT (W)
IC (A)
1
eH
5
ea
8
tsin
50×50×2 0.5
k
6 25×50×2
4
Without Heatsink
1.0 Single Pulse
2 0.1 Without Heatsink
Ta=25°C
0.5 0 0.05
1 5 10 50 100 500 1000 –40 0 50 100 150 3 5 10 50 100
152
STA302A PNP Darlington
General purpose/3-phase motor drive External dimensions C ••• STA (8-pin)

Specification

ICP –8 (PW≤10ms, Du≤50%) A VCE(sat) –2.0 V IC=–3A, IB=–10mA
3 (Ta=25°C) ton 0.4 µs VCC –30V,
PT W
15 (Tc=25°C) tstg 0.8 µs IC=–3A,
Tj 150 °C tf 0.6 µs IB1=–IB2=–10mA
Tstg –40 to +150 °C
1 8
R1 R2
2 4 6
3 5 7
–3 10000 10000
mA
–1.8 A
–1.5m 5000 typ 5000
.3mA
A
–1.2m
IB=–2
–1.0mA
–2
–0.9mA 1000 1000
–0.8mA °C
IC (A)
25
hFE
500 500 =1 °C
hFE
Ta 25
0°
C
–3
–1
100 100
50 50
0 20 20
0 –1 –2 –3 –4 –5 –6 –0.03 –0.05 –0.1 –0.5 –1 –5 –6 –0.02 –0.05 –0.1 –0.5 –1 –4
(IC / IB=500) (VCE=–4V)
–2 –3 –6
–5
75°C
VCE (sat) (V)
–2 –4
VCE (sat) (V)
25°C
IC (A)
Ta=–30°C
–1 –3
5°C
25°C IC=–4A
Ta=12
–30°C
125°C
–1 IC=–2A –2
IC=–1A
–1
0 0 0
–0.7 –1 –4 –0.2 –0.5 –1 –5 –10 –50 –100 0 –1 –2 –3

20 16 –10
Natural Cooling –5
14 Heatsink: Aluminum
10 in mm
12
1m
W
s
ith
10
θ j–a (°C / W)
Inf
5
ms
10
init
–1
PT (W)
IC (A)
eH
ea
8 –0.5
tsin
50×50×2
k
6 25×50×2
4
10 Without Heatsink –0.1
2 Single Pulse
0.5 0 Ta=25°C
–0.03
1 5 10 50 100 500 1000 –40 0 50 100 150 –3 –5 –10 –50 –100
153
General purpose/3-phase motor drive External dimensions C ••• STA (8-pin)

Specification

3 (Ta=25°C) ton 0.8 µs VCC 40V,
PT W
15 (Tc=25°C) tstg 5.0 µs IC=2A,
Tj 150 °C tf 2.0 µs IB1=–IB2=10mA
Tstg –40 to +150 °C
3 5 7
2 4 6
R1 R2
1 8
(VCE=4V)
4 20000 (VCE=4V)
20000
A A
1m 0.8m
IB= 10000
0 .6mA typ 10000
0.5mA 5000
3 5000
A
0.4m
°C
25
IC (A)
hFE
1000 =1
hFE
2 1000 Ta
°C
0.3mA 25
500
500
0°
C
–3
1
100
100
0 50
0.02 0.05 0.1 0.5 1 4 50
0 1 2 3 4 5 0.02 0.05 0.1 0.5 1 4
VCE (V) IC (A)
IC (A)
(IC / IB=1000) (VCE=4V)
3 3 4
2 2
VCE (sat) (V)
VCE (sat) (V)
IC (A)
°C
75°C
125
25°C
2
–30°C
Ta =
IC=4A
1 Ta=–30°C 1
IC=2A IC=3A
25°C
125°C IC=1A 1
0 0
0.2 0.5 1 5 10 50 100 0 1 2
0.2 0.5 1 4

20 16 10
Natural Cooling
14 5
Heatsink: Aluminum
10
1m
in mm
s
10
12
ms
W
ith
θ j–a (°C / W)
5 10
Inf
PT (W)
1
init
IC (A)
eH
8
ea
50×50×2 0.5
tsin
k
6 25×50×2
4
1.0 Without Heatsink 0.1
2 Single Pulse
0.5 Ta=25°C
0 0.03
1 5 10 50 100 500 1000 –40 0 50 100 150 3 5 10 50 100 200
154
3-phase motor drive External dimensions C ••• STA (8-pin)

Specification

VCEO 550 V IEBO 75 150 mA VEB=6V
VEBO 6 V VCEO 550 V IC=100µA
IC 1 A hFE 200 400 1000 VCE=4V, IC=500mA
IC=500mA, IB=10mA
IB 0.5 A VBE(sat) 1.5 2.2 V
3 (Ta=25°C) VFEC 1.1 1.5 V IFEC=1A
PT W
15 (Tc=25°C) ton 0.5 µs VCC 200V,
Tj 150 °C tstg 3.5 µs IC=500mA,
Tstg –40 to +150 °C tf 0.7 µs IB1=–IB2=10mA
fT 15 MHz VCE=12V, IE=–0.2A
3 5 7
2 4 6
R1
R2
1 8
R1: 500Ω typ R2: 70Ω typ
(VCE=4V) (VCE=4V)
1.0 1000 1000
IB=20mA
A
10m
A 500 500
0.8 5m
°C
typ 25
=1
Ta °C
75
°C
25
0.6
0°
C
2mA
IC (A)
–3
hFE
hFE
100 100
0.4
50 50
1.5mA
0.2
0 10 10
0 1 2 3 4 5 6 0.03 0.05 0.1 0.5 1 2 0.03 0.05 0.1 0.5 1 2
(IC / IB=100) (VCE=4V)
3 3 2.0
1.5
VCE (sat) (V)
2 2
VCE (sat) (V)
IC (A)
°C
Ta=–30
25°C
1.0
75°C
25°C
–30°C
Ta=1
25°C
IC=1A
1 75°C 1
IC=0.5A
125°C 0.5
0 0
0.2 0.5 1 2 0
1 5 10 50 100 500 0 1 2 3

20 16 5
Natural Cooling
14
Heatsink: Aluminum
10
10
1m
0µ
in mm 1
10
s
s
12
ms
W
0.5
ith
θ j–a (°C / W)
In f
5 10
init
PT (W)
eH
IC (A)
ea
8
50×50×2 0.1
tsin
k
6 25×50×2 0.05
4
0.01
2 Single Pulse
0.5 Ta=25°C
0 0.003
1 5 10 50 100 500 1000 –40 0 50 100 150 3 5 10 50 100 500 600
155
STA305A
PNP Darlington
3-phase motor drive External dimensions C ••• STA (8-pin)

Specification

VCEO –550 V IEBO –10 –20 mA VEB=–6V
VEBO –6 V VCEO –550 V IC=–100µA
IC –1 A hFE 200 400 1000 VCE=–4V, IC=–500mA
IC=–500mA, IB=–10mA
IB –0.5 A VBE(sat) –1.6 –2.2 V
3 (Ta=25°C) ton 0.7 µs VCC –200V,
PT W
15 (Tc=25°C) tstg 13.0 µs IC=–500mA,
Tj 150 °C tf 2.5 µs IB1=–IB2=–10mA
Tstg –40 to +150 °C fT 15 MHz VCE=–12V, IE=0.2A
1 8
R1 R2
2 4 6
3 5 7
R1: 500Ω typ R2: 70Ω typ
–1.0
IB=–20mA (VCE=–4V) (VCE=–4V)
1000 1000
A
m
– 10
mA 500 500
–0.8 –5
°C
typ 25
mA =1
–2 Ta °C
75 C
°
–0.6 25
IC (A)
0°
C
mA –3
–1.5
hFE
hFE
100 100
–0.4
50 50
–0.2
0
0 –1 –2 –3 –4 –5 –6 10 10
–0.03 –0.05 –0.1 –0.5 –1 –2 –0.03 –0.05 –0.1 –0.5 –1 –2
VCE (V)
IC (A) IC (A)
(IC / IB=100) (VCE=–4V)
–3 –3 –2.0
–1.5
VCE (sat) (V)
–2 –2
VCE (sat) (V)
IC (A)
–1.0
25°C
Ta=125°C
75°C
25°C
–30°C
Ta=1
IC=1A
–1 75°C –1
IC=0.5A
25°C –0.5
–30°C
0 0 0
–0.2 –0.5 –1 –2 –1 –5 –10 –50 –100 –500 0 –1 –2 –3

20 16 –5
Natural Cooling
14
10
0µ
1m
in mm –1
s
s
10
12
m
s
–0.5
W
θ j–a (°C / W)
5
ith
10
PT (W)
Inf
init
eH
8
IC (A)
50×50×2 –0.1
ea
tsin
6 25×50×2 –0.05
k
4
–0.01
2 Single Pulse
0.5 Ta=25°C
0 –0.003
1 5 10 50 100 500 1000 –40 0 50 100 150 –3 –5 –10 –50 –100 –500 –600
156
General purpose External dimensions C ••• STA (8-pin)

Specification

IB –1 A VCE(sat) –1.5 V
IC=–2A, IB=–4mA
3 (Ta=25°C) VBE(sat) –2.5 V
PT W
15 (Tc=25°C)
Tj 150 °C
Tstg –40 to +150 °C
1 8
R1 R2
2 4 6
3 5 7
–4 10000 10000
IB=–5mA –2mA
75°C
–1.5mA
25°C
5000 5000
typ
–3 –1.0mA
°C
25
=1
Ta
–0.7mA 1000
IC (A)
1000
hFE
hFE
0°
C
–2
–3
500 500
–0.5mA
–1
–0.3mA 100 100
0 50 50
0 –1 –2 –3 –4 –5 –6 –0.03 –0.05 –0.1 –0.5 –1 –4 –0.03 –0.05 –0.1 –0.5 –1 –4
(IC / IB=1000) (VCE=–4V)
–3 –3 –4
–3
–2 –2
VCE (sat) (V)
VCE (sat) (V)
IC=–4A
IC (A)
–2
IC=–2A
5°C
Ta=–30°C
–1 –1
C
25°C
Ta=12
75°C
25°C
–30°
75°C IC=–1A
–1
125°C
0 0 0
–0.2 –0.5 –1 –4 –0.1 –0.5 –1 –5 –10 –50 –100 0 –1 –2 –3

20 16 –10
Single Pulse
–5
10
14 Without Heatsink
0µ
10
1m
Ta=25°C
s
s
10
in mm
12
ms
W
ith
θ j–a (°C / W)
In f
5 10 –1
init
PT (W)
eH
IC (A)
ea
8 –0.5
tsin
50×50×2
k
6 25×50×2
4
2 Single Pulse
0.5 Ta=25°C
0 –0.03
1 5 10 50 100 500 1000 –40 0 50 100 150 –3 –5 –10 –50 –100 –200
157
STA312A
NPN

Specification

VCEO 60 V IEBO 100 µA VEB=6V
IC 3 A hFE 300 VCE=4V, IC=0.5A
3 (Ta=25°C) ton 0.8 µs VCC 20V,
PT W
15 (Tc=25°C) tstg 3.0 µs IC=1A,
Tj 150 °C tf 1.2 µs IB1=15mA, IB2=–30mA
Tstg –40 to +150 °C
3 5 7
2 4 6
1 8
(VCE=4V) (VCE=4V)
3 2000 2000
IB=12mA
8mA
Ta=125°C
1000 1000 75°C
5mA typ
2 25°C
3mA
IC (A)
500 500
hFE
hFE
°C
–30
2mA
1
1mA
0.5mA
0 100 100
0 1 2 3 4 5 6 0.01 0.05 0.1 0.5 1 3 0.01 0.05 0.1 0.5 1 3
VCE(sat), VBE(sat)-IC Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)
(IC / IB=20) (VCE=4V)
1.5 1.5 3
VCE (sat), VBE (sat) (V)
1.0 1.0 2
VCE (sat) (V)
IC (A)
VBE (sat)
°C
75°C
125
0.5 1
25°C
0.5
–30°C
IC= 3A
Ta=
IC=2A
VCE (sat)
IC=1A
0 0 0
0.01 0.05 0.1 0.5 1 5 0.001 0.005 0.01 0.05 0.1 0.5 1 0 0.5 1.0 1.5
IC (A) IB (A) VBE (V)

20 16 10
Natural Cooling
14 5
Heatsink: Aluminum
1m
10 in mm
s
10
12
m
s
W
ith
θ j–a (°C / W)
5 10
Inf
PT (W)
in
1
ite
IC (A)
He
8
ats
50×50×2
0.5
ink
6 25×50×2
4
1 Without Heatsink
Single Pulse
Ta=25°C
0.5 0 0.05
1 5 10 50 100 500 1000 –40 0 50 100 150 3 5 10 50 100
158
STA322A
PNP

Specification

VCEO –50 V IEBO –10 µA VEB=–8V
IC –3 A hFE 100 350 VCE=–4V, IC=–1A
IC=–2A, IB=–40mA
IB –1 A VBE(sat) –1.5 V
3 (Ta=25°C)
PT W
15 (Tc=25°C)
Tj 150 °C
Tstg –40 to +150 °C
1 8
2 4 6
3 5 7
–5 1000
1000
mA
–60 –50mA
A
80m
IB=–
–40mA
–4 500 500
Ta=125°C
–30mA
typ 25°C
–3
IC (A)
–20mA
hFE
hFE
–30°C
–2
–10mA 100 100
–5mA
–1
50 50
0 30 30
0 –1 –2 –3 –4 –5 –6 –0.01 –0.05 –0.1 –0.5 –1 –5 –0.01 –0.05 –0.1 –0.5 –1 –5
(IC / IB=50) (VCE=–4V)
–2 –3
–1.0
25°C
°C
Ta=125
–2
VCE (sat) (V)
VCE (sat) (V)
IC (A)
–30°C
–0.5 –1
°C
IC=–2A –1
125
C
C
75°
°C
Ta =
25°
–30
IC=–0.5A IC=–1A
0 0 0
–0.01 –0.05 –0.1 –0.5 –1 –5 –0.002 –0.005 –0.01 –0.05 –0.1 –0.5 –1 0 –0.5 –1.0 –1.5
IB (A) VBE (V)
IC (A)

–10
30 16
1m
10 in mm
s
5m
12
10
s
W
ms
ith
5
θ j–a (°C / W)
Inf
10
init
PT (W)
–1
IC (A)
eH
ea
8
tsin
50×50×2 –0.5
k
1
6 25×50×2
0.5
4
Without Heatsink
Single Pulse
2 –0.1 Without Heatsink
Ta=25°C
0.1 0 –0.05
0.1 0.5 1 5 10 50 100 5001000 5000 –40 0 50 100 150 –0.5 –1 –5 –10 –50
159
STA371A
NPN Darlington
With built-in avalanche diode External dimensions C ••• STA (8-pin)

Specification

IC 2 A hFE 2000 5000 12000 VCE=4V, IC=1A
IC=1A, IB=2mA
IB 0.5 A VBE(sat) 1.8 2.2 V
3 (Ta=25°C) VFEC 1.3 1.8 V IFEC=1A
PT W
15 (Tc=25°C) ton 0.5 µs VCC 30V,
Tj 150 °C tstg 4.0 µs IC=1A,
3 5 7
2 4 6
R1 R2
1
8
4 (VCE=4V) (VCE=4V)
10000 20000
mA
10.0 Typ
10000
I B= A 5000
5.0m
A 5000
3 2.0m
A
1.0m
1000 °C
IC (A)
A
0.6m 25 C
=1 75° C
hFE
1000
hFE
2 A Ta °
0.4m 500 25 C
0°
A
500 –3
0.3m
1
100 100
50
50
0 30 30
0 1 2 3 4 5 6 0.02 0.05 0.1 0.5 1 4 0.02 0.05 0.1 0.5 1 4
VCE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Temperature Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)
(IC / IB=1000) (IC=1A) (VCE=4V)
3 3 4
75°C
25°C
°C
–30°C
25°C
–30°C
75°C
Ta=125
Ta=125°C
3
VCE (sat) (V)
2 2
VCE (sat) (V)
IC (A)
1 1
1
75 25°C
1
–30°C
Ta=
°C
°C
25
0 0 0
0.2 0.5 1 4 0.1 0.5 1 3 0 1 2 3

30 16 5 10
With Silicone Grease 0µ
s
Natural Cooling 1m
14 10 s
Heatsink: Aluminum m
s
in mm
10 12
W
ith
θ j–a (°C / W)
1
Inf
10
PT (W)
init
5
eH
IC (A)
ea
8 0.5
tsin
50×50×2
k
6 25×50×2
4
Without Heatsink Single Pulse
1
2 Ta=25°C
0.5 0
0.2 0.5 1 5 10 50 100 500 1000 0.05
–40 0 50 100 150 3 5 10 50 100
160
With built-in avalanche diode External dimensions D • • • STA (10-pin)

Specification

4 (Ta=25°C) ton 1.0 µs VCC 30V,
PT W
20 (Tc=25°C) tstg 4.0 µs IC=3A,
Tj 150 °C tf 1.5 µs IB1=–IB2=10mA
Tstg –40 to +150 °C
3 5 7 9
2 4 6 8
R1 R2
1 10
(VCE=4V) (VCE=4V)
5 20000 20000
mA
2.0 10000
IB= 10000
4 1.0mA typ
0.8mA
5000
5000
0.6mA
3 °C
25
=1
IC (A)
0.5mA
Ta °C
hFE
1000 25
hFE
0°
C
0.4mA 1000 –3
2
500
500
1 0.3mA
100
0 100
0 1 2 3 4 50
0.05 0.1 0.5 1 4 0.05 0.1 0.5 1 4
VCE (V) IC (A)
IC (A)
(IC / IB=1000) (VCE=–4V)
2 3 4
3
2
VCE (sat) (V)
VCE (sat) (V)
IC (A)
1 Ta=–30°C 2
25°C IC=4
IC=3A A
IC=2A
125°C 1 IC=1A
°C
1
–30°C
125
75°C
25°C
Ta=
0 0 0
0.1 0.5 1 4 0.2 0.5 1 5 10 50 100 0 1 2

20 24 10
Natural Cooling
1m
With Infinite Heatsink Heatsink: Aluminum 5

20
s
10 in mm
10
ms
16
θ j–a (°C / W)
5
PT (W)
100×100×2 1
IC (A)
12
0.5
50×50×2
8.0
25×50×2

4.0 Single Pulse
Ta=25°C
0.5 0 0.05
1 5 10 50 100 500 1000 –40 0 50 100 150 3 5 10 50 100
161
STA402A
PNP Darlington
General purpose External dimensions D ••• STA (10-pin)

Specification

ICP –8 (PW≤10ms, Du≤50%) A VCE(sat) –2.0 V IC=–3A, IB=–10mA
4 (Ta=25°C) ton 0.4 µs VCC –30V,
PT W
20 (Tc=25°C) tstg 0.8 µs IC=–3A,
Tj 150 °C tf 0.6 µs IB1=–IB2=–10mA
Tstg –40 to +150 °C
1 R1 R2 10
2 4 6 8
3 5 7 9
–6 10000 10000
–1.8mA
A
–1.5mA 5000
.3m
typ 5000
–5
–2
IB=
–1.2mA
–4 –1.0mA
1000 1000
IC (A)
°C
hFE
hFE
–0.8mA 500 500

–3 25
=1 °C
Ta 25
0°
C
–2 –3
100 100
–1 50 50
0 20 20
0 –1 –2 –3 –4 –5 –6 –0.02 –0.05 –0.1 –0.5 –1 –4 –0.02 –0.05 –0.1 –0.5 –1 –4
(IC / IB=500) –3
(VCE=–4V)
–2 –4
–3
–2
VCE (sat) (V)
VCE (sat) (V)
IC (A)
Ta=–30°C
°C
–1 –2
–30°C
Ta=125
25°C IC=–4A
125°C –1
75°C
IC=–2A
25°C
IC=–1A
–1
0 0 0
–0.5 –0.1 –5 –10 –50 0 –1 –2 –3
–0.7 –1 –4

20 24 –10
With Infinite Heatsink Heatsink: Aluminum
10 20
in mm
1m
10
s
m
s
16
θ j–a (°C / W)
5
PT (W)
–1
100×100×2
IC (A)
12 –0.5
50×50×2
8.0
25×50×2

4.0
Single Pulse
Ta=25°C
0.5 0 –0.03
1 5 10 50 100 500 1000 –40 0 50 100 150 –3 –5 –10 –50 –100
162
STA403A
NPN Darlington

Specification

4 (Ta=25°C) ton 0.6 µs VCC 40V,
PT W
20 (Tc=25°C) tstg 5.0 µs IC=2A,
Tj 150 °C tf 2.0 µs IB1=–IB2=10mA
Tstg –40 to +150 °C
3 5 7 9
2 4 6 8
R1 R2
1 10
(VCE=4V) (VCE=4V)
4 20000 20000
A
0.8m
A
1m 10000
IB = A 10000
0.6m typ
0.5mA 5000 5000
3
0.4mA
IC (A)
°C
25
hFE
hFE
2 1000 1000 =1
0.3mA Ta
°C
25
500 500
0°
C
–3
1
100 100
0 50 50
0 1 2 3 4 5 0.02 0.05 0.1 0.5 1 4 0.02 0.05 0.1 0.5 1 4
(IC / IB=1000) (VCE=4V)
3 3 4
2 2
VCE (sat) (V)
VCE (sat) (V)
IC (A)
2
IC=4A
IC=3A
IC=2A
1 Ta=–30°C 1 IC=1A
°C
25°C
125
75°C
125°C
1
25°C
Ta=
–30°C
0 0
0.2 0.5 1 4 0.2 0.5 1 5 10 50 100 0 1 2

20 24 10
Natural Cooling
With Infinite Heatsink Heatsink: Aluminum 5
10 20
1m
in mm
s
10
m
s
16
θ j–a (°C / W)
5
PT (W)
1
100×100×2
IC (A)
12
0.5
50×50×2
8.0
25×50×2
1.0 Without Heatsink 0.1
4.0
Single Pulse
0.5 0 Ta=25°C
0.03
1 5 10 50 100 500 1000 –40 0 50 100 150 3 5 10 50 100
163
STA404A
NPN Darlington

Specification

ICP 6 (PW≤10ms, Du≤50%) A VCE(sat) 2.0 V IC=1A, IB=1.5mA
4 (Ta=25°C)
PT W
20 (Tc=25°C)
Tj 150 °C
Tstg –40 to +150 °C
3 5 7 9
2 4 6 8
R1 R2
1 10
(VCE=4V) (VCE=4V)
6 5000 5000
100mA
IB=200mA
5 30mA
°C
25
=1
Ta
1000
°C
10mA 1000
4
75
°C
25
C
IC (A)
0°
3mA 500 500
–3
hFE
hFE
1mA
2
100 100
1
50 50
0 30 30
0 1 2 3 4 5 6 0.03 0.05 0.1 0.5 1 5 6 0.03 0.05 0.1 0.5 56
(IC / IB=100) (VCE=4V)
3 3 6
2 2 4
VCE (sat) (V)
VCE (sat) (V)
IC (A)
3
25°C
IC=3A
75°C 75°C
5°C
IC=1.5A 2
1 1
2
–30°C
=1
25°C
Ta
IC=1A
°C
Ta=125°C 1
–30
0 0 0
0.2 0.5 1 5 6 0.5 1 5 10 50 100 200 0 1 2 3

20 24 10
Natural Cooling 5
1µ
10 20
in mm
S
1m
S
10
m
θ j–a (°C / W)
16
S
5
1
PT (W)
100×100×2
IC (A)
12 0.5
50×50×2
8.0
25×50×2
1 Without Heatsink 0.1
4.0
Single Pulse
0.5 0.03 Ta=25°C
0
1 5 10 50 100 5001000 –40 0 50 100 150 5 10 50 100 200
164
STA406A
NPN Darlington
With built-in avalanche diode External dimensions D ••• STA (10-pin)

Specification

IC 6 A hFE 2000 15000 VCE=2V, IC=3A
IB 1 A VCE(sat) 1.5 V
IC=3A, IB=10mA
4 (Ta=25°C) VBE(sat) 2.0 V
PT W
20 (Tc=25°C) ES/B 200 mJ VCC 20V, L=10mH, IC=6.4A
Tj 150 °C
Tstg –40 to +150 °C
3 5 7 9
2 4 6 8
R1 R2
1 10
(VCE=2V) (VCE=2V)
6 20000 20000
1.5mA 1mA
IB=10mA
10000 10000
5 typ
0.8mA 5000 5000
4
0.6mA
IC (A)
°C
hFE
hFE
1000 1000 25
=1 °C
3 Ta 75
°C
500 500 25
0°
C
–3
2 0.4mA
100 100
1
50 50
0 30 30
0 1 2 3 4 5 6 0.03 0.05 0.1 0.5 1 56 0.03 0.05 0.1 0.5 1 56
(IC / IB=1000) (VCE=2V)
3 3 6
2 2 4
VCE (sat) (V)
VCE (sat) (V)
IC (A)
IC=6A
3
IC=3A
Ta=–30°C
1 1 2
25°C
IC=1A
75°C
25°C
125°C 1
Ta=1
75°C
–30°C
25°C
0 0 0
0.3 0.5 1 5 6 0.1 0.5 1 5 10 50 100 0 1 2 3
20 24 20
Natural Cooling 10
With Infinite Heatsink
100µs
20 Heatsink: Aluminum 1m
10 10 s
in mm ms
5
16
θ j–a (°C / W)
5
PT (W)
100×100×2
IC (A)
12 1
50×50×2 0.5
8.0
25×50×2
Without Heatsink
1 4.0 Single Pulse
Ta=25°C
0.5 0 0.05
1 5 10 50 100 500 1000 –40 0 50 100 150 3 5 10 50 100
165
General purpose External dimensions D • • • STA (10-pin)

Specification

IB –1 A VCE(sat) –1.5 V
IC=–2A, IB=–4mA
4 (Ta=25°C) VBE(sat) –2.5 V
PT W
20 (Tc=25°C)
Tj 150 °C
Tstg –40 to +150 °C
1 10
R1 R2
2 4 6 8
3 5 7 9
–4 10000 10000
IB=–5mA –2mA 75°C
–1.5mA
5000 5000
typ
°C
–3 –1.0mA 25
5°
C
2 °C
=1 – 30
–0.7mA 1000 Ta
IC (A)
1000
hFE
hFE
–2
500 500
–0.5mA
–1
–0.3mA
100 100
0 50
0 –1 –2 –3 –4 –5 –6 –0.03 –0.05 –0.1 –0.5 –1 –4 50
–0.03 –0.05 –0.1 –0.5 –1 –4
VCE (V) IC (A)
IC (A)
(IC / IB=1000) (VCE=–4V)
–3 –3 –4
–3
–2 –2
VCE (sat) (V)
VCE (sat) (V)
IC=–4A
IC (A)
–2
IC=–2A 75°C
Ta=–30°C IC=–1A
–1 25°C –1 25°C
75°C
25°C
–1
–30°C
125°C
Ta=1
0 0 0
–0.2 –0.5 –1 –4 –0.1 –0.5 –1 –5 –10 –50 –100 0 –1 –2 –3

20 24 –10
20
10
10 in mm
0µ
1m
10
s
s
ms
16
θ j–a (°C / W)
5 –1
PT (W)
100×100×2
IC (A)
12 –0.5
50×50×2
8.0
25×50×2
4.0
Single Pulse
0.5 Ta=25°C
0 –0.03
1 5 10 50 100 500 1000 –40 0 50 100 150 –3 –5 –10 –50 –100 –200
PW (mS) VCE (V)
Ta (°C)
166
STA412A NPN

Specification

VCEO 60 V IEBO 100 µA VEB=6V
4 (Ta=25°C) ton 0.8 µs VCC 20V,
PT W
20 (Tc=25°C) tstg 3.0 µs IC=1A,
Tj 150 °C tf 1.2 µs IB1=15mA, IB2=–30mA
Tstg –40 to +150 °C
3 5 7 9
2 4 6 8
1 10
(VCE=4V) (VCE=4V)
3 2000 2000
IB=12mA
8mA
Ta=125°C
1000
5mA typ 1000 75°C
2 25°C
3mA
IC (A)
500 500
hFE
hFE
°C
2mA –30
1
1mA
0.5mA
0 100 100
0 1 2 3 4 5 6 0.01 0.05 0.1 0.5 1 3 0.01 0.05 0.1 0.5 1 3
(IC / IB=20) (VCE=4V)
1.5 1.5 3
1.0 1.0 2
VCE (sat) (V)
IC (A)
VBE (sat)
0.5 0.5 1
IC=3A
°C
IC=2A
125
°C
C
75°
Ta=
25°
IC=1A
–30
VCE (sat)
0 0 0
0.01 0.05 0.1 0.5 1 5 0.001 0.005 0.01 0.05 0.1 0.5 1 0 0.5 1.0 1.5
IC (A) IB (A) VBE (V)

20 24 10
Natural Cooling
With Infinite Heatsink 5
1m
10
s
10
in mm
m
s
16
θ j–a (°C / W)
5
PT (W)
100×100×2 1
IC (A)
12
0.5
50×50×2
8.0
25×50×2
1 Without Heatsink
4.0 Single Pulse
Ta=25°C
0.5 0 0.05
1 5 10 50 100 500 1000 –40 0 50 100 150 3 5 10 50 100
167
STA413A NPN

Specification

VCEO 35±5 V IEBO 10 µA VEB=6V
VEBO 6 V VCEO 30 40 V IC=25mA
IB 1 A VCE(sat) 0.5 V IC=1A, IB=5mA
4 (Ta=25°C)
PT W
20 (Tc=25°C)
Tj 150 °C
Tstg –40 to +150 °C
3 5 7 9
2 4 6 8
1 10
(VCE=4V) (VCE=4V)
3.0 5000
5000
6mA
A
A
mA
8m
m
10
15
5mA
4mA Ta=125°C
2.0
typ 75°C
3mA 25°C
1000 1000
IC (A)
hFE
hFE
2mA
55°C
500 –
500
IB=1mA
1.0
0 100
100 0.01 0.05 0.1 0.5 1 3
0 1.0 2.0 3.0 0.01 0.05 0.1 0.5 1 3
VCE(sat)-IC Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)
(VCE=4V)
1.2 1.2 4.0
1.0 1.0
3.0
IC=3
00
IC / IB=5
A
VCE (sat) (V)
VCE (sat) (V)
IC (A)
2.0
2A
0.5 0.5
100
1A 1.0
°C
20
25
25 C
°
=1
°C
75
°C
0.5A
Ta
–55
0 0 0
0.01 0.05 0.1 0.5 1 3 1 5 10 50 100 500 1000 0 0.5 1.0 1.5

20.0 10.0
24
Natural Cooling
1m
10.0 With Infinite Heatsink Heatsink: Aluminum

s
20 5.0 10
in mm m
s
5.0
10
θ j–a (°C / W)
16 0m
s
PT (W)
100×100×2
IC (A)
12
1.0 DC
1.0 (T
50×50×2 C =2
8.0 5°
0.5 C)
25×50×2
0.5
Without Heatsink
4.0
Single Pulse
Without Heatsink
Ta=25°C
0.1 0 0.2
0.1 0.5 1.0 5.0 10 50100 5001000 5000 –40 0 50 100 150 2 5 10 50
168
STA421A
PNP

Specification

VCEO –60 V IEBO –100 µA VEB=–6V
ICP –6 (PW≤10ms, Du≤50%) A VCE(sat) –1.0 V IC=–2A, IB=–0.2A
4 (Ta=25°C) ton 0.25 µs VCC –12V,
PT W
20 (Tc=25°C) tstg 0.75 µs IC=–2A,
Tj 150 °C tf 0.25 µs IB1=–IB2=–0.2A
Tstg –40 to +150 °C
1 10
2 4 6 8
3 5 7 9
–4 500 500
A
m
80 mA
=– –60
IB mA
–50
–3 –40m
A
°C
Ta=125
–30mA typ 75°C
25°C
IC (A)
hFE
hFE
–2 100 100
–20mA
–30°C
50
–10mA 50
–1
–5mA
0 20 20
0 –1 –2 –3 –4 –5 –6 –0.01 –0.05 –0.1 –0.5 –1 –4 –0.01 –0.05 –0.1 –0.5 –1 –4
(IC / IB=10) (VCE=–4V)
–1.0 –1.5 –4
–3
–1.0
VCE (sat)
IC (A)
IC=–3A
–0.5 –2
–2A
VBE (sat)
–0.5
–1A –1
75 ° C
°
125
C
C
°C
25°
T a=
–30
VCE (sat) 0
0 0 0 –0.5 –1.0 –1.5
–0.05 –0.1 –0.5 –1 –3 –0.01 –0.05 –0.1 –0.5 –1
IC (A) VBE (V)
IB (A)

20 24 –10
Natural Cooling
–5 1m
10 20 s
in mm 10
m
s
16
θ j–a (°C / W)
5
PT (W)
100×100×2 –1
IC (A)
12
–0.5
50×50×2
8.0
25×50×2
1.0 Without Heatsink Single Pulse

4.0
Ta=25°C
0.5 0 –0.05
1 5 10 50 100 500 1000 –40 0 50 100 150 –3 –5 –10 –50 –100
PW (mS) VCE (V)
Ta (°C)
169
STA431A
PNP + NPN
H-bridge External dimensions D • • • STA (10-pin)

Ratings
Symbol NPN PNP Unit
VCBO 60 –60 V
VCEO 60 –60 V
VEBO 6 –6 V
IC 3 –3 A
4 (Ta=25°C)
PT W
20 (Tc=25°C)
Tj 150 °C
Tstg –40 to +150 °C

10
6 8
7 9
3 5
2 4
NPN PNP NPN
4
(VCE=4V)
–4 4
A 60mA A
m
70 0m
IB= 50mA =–
8
A
IB 0m
–6 mA
40mA –50
3 –3 A 3
–40m
30mA
–30mA
IC (A)
IC (A)
IC (A)
2 20mA 2
–2
–20mA
10mA
–10mA
1 –1 1
5mA
°C
–5mA
C
125
75 °
C
°C
25°
Ta=
–3 0
0 0 0
0 1 2 3 4 5 6 0 –1 –2 –3 –4 –5 –6 0 0.5 1.0 1.5

NPN PNP PNP
500 500 –4
–3
typ
typ
IC (A)
hFE
hFE
100 100 –2
50 50 –1
75 C
5°
°C
12
°C
0°C
Ta=
25
–3
20 20 0
0.01 0.05 0.1 0.5 1 4 –0.01 –0.05 –0.1 –0.5 –1 –4 0 –0.5 –1.0 –1.5

NPN (VCE=4V)
PNP
500 (VCE=–4V)
500
Ta=125°C
75°C
°C
Ta=125
25°C 75°C
25°C
hFE
hFE
100 100
–30°C
–30°C
50
50
20 20
0.01 0.05 0.1 0.5 1 4 –0.01 –0.05 0.1 –0.5 –1 –4
IC (A) IC (A)
170
STA431A
NPN PNP
IEBO 100 µA VEB=6V –100 µA VEB=–6V
tf 0.3 µs IB1=–IB2=0.2A 0.25 µs IB1=–IB2=–0.2A
NPN PNP
1.5 –1.5 20
10
1.0
VCE (sat) (V)
–1.0 IC=3A
VCE (sat) (V)
θ j–a (°C / W)
IC=3A 2A
0.5 2A –0.5
1A
1.0
1A
0 0 0.5
0.005 0.01 0.05 0.1 0.5 1 –0.005 –0.01 –0.05 –0.1 –0.5 –1 1 5 10 50 100 500 1000
VCE(sat), VBE(sat)-IC Characteristics (Typical) PT-Ta Characteristics

NPN PNP
(IC / IB=10) (IC / IB=10)
1.0 –1.0 24
Natural Cooling
20 in mm
16
PT (W)
100×100×2
0.5 –0.5 12
VBE (sat) VBE (sat) 50×50×2

8.0
25×50×2
Without Heatsink
4.0
VCE (sat) VCE (sat)

0 0 0
0.05 0.1 0.5 1 3 –0.05 –0.1 –0.5 –1 –3 –40 0 50 100 150

NPN PNP
10 –10
1m
5 –5 1m
s
10 10 s
m
m s
s
1 –1
IC (A)
IC (A)
0.5 –0.5

Ta=25°C Ta=25°C
0.05 –0.05
3 5 10 50 100 –3 –5 –10 –50 –100
VCE (V) VCE (V)
171
STA434A PNP + NPN Darlington
H-bridge External dimensions D ••• STA (10-pin)

Ratings
Symbol NPN PNP Unit
VCBO 80 –60 V
VCEO 60 –60 V
VEBO 6 –6 V
IC 4 –4 A
4 (Ta=25°C)
PT W
20 (Tc=25°C)
Tj 150 °C
Tstg –40 to +150 °C
10
R1 R2
6 8
7 9
3 5
2 4
R3 R4
1
NPN PNP NPN
(VCE=4V)
6 –6 4
A
mA mA
.3m
4.0 –1.8
IB=
–2
–5 mA
mA
IB=
2.0 –1.5
3
A mA
4 1.2m –1.2
–4
0.8mA mA
–1.0
IC (A)
IC (A)
IC (A)
0.6mA –3 2
mA
25°C
0.5mA –0.8
75°C
25°C
–30°C
Ta=1
2 0.4mA –2
1
–1
0 0 0
0 2 4 6 0 –1 –2 –3 –4 –5 –6 0 1 2

NPN PNP PNP
20000 10000 –4
10000 5000 typ

typ
5000
–3
1000
IC (A)
1000
hFE
hFE
500 –2
500
°C
75°C
25°C
Ta=125
–30°C
100 –1
100
50
50
30 20 0
0.03 0.05 0.1 0.5 1 4 –0.02 –0.05 –0.1 –0.5 –1 –4 0 –1 –2 –3

NPN PNP
(VCE=4V constant) (VCE=4V constant)
20000
10000
10000 5000
5000
°C °C
25 25
=1 =1 °C
Ta °C Ta 25
0°
25 1000 C
0°C –3
hFE
1000 –3
hFE
500
500
100
100
50 50
30 20
0.05 0.1 0.5 1 4 –0.02 –0.05 –0.1 –0.5 –1 –4
IC (A) IC (A)
172
STA434A
NPN PNP
VCE(sat)-IB Characteristics (Typical) θj-a-PW Characteristics
NPN PNP
3 –3 20
10
2 IC=4A –2
VCE (sat) (V)
θ j–a (°C / W)
VCE (sat) (V)
3A
IC=–4A
2A
1 –1
1A IC=–2A
IC=–1A
1.0
0 0 0.5
0.2 0.5 1 5 10 50 100 –0.5 –0.1 –5 –10 –50 1 5 10 50 100 500 1000

(IC / IB=1000) –2
2.0 24
Natural Cooling
20 in mm
VCE (sat) (V)
16
VCE (sat) (V)
PT (W)
°C 100×100×2
Ta=–30°C –1 Ta=–30
1.0 12
25°C
75°C 25°C
125°C
8.0
25×50×2
125°C
Without Heatsink
4.0
0 0 0
0.1 0.5 1 4 –0.5 –1 –4 –40 0 50 100 150

NPN PNP
–10 –10
–5 –5
1m
1m
10
s
ms
s
10
ms
IC (A)
IC (A)
–1
–1
–0.5
–0.5

Ta=25°C –0.1 Ta=25°C
–0.1 –0.07
–3 –5 –10 –50 –100 –3 –5 –10 –50 –100
VCE (V) VCE (V)
173
STA435A
NPN Darlington

Specification

4 (Ta=25°C) ton 1.0 µs VCC 30V,
PT W
20 (Tc=25°C) tstg 4.0 µs IC=3A,
Tj 150 °C tf 1.5 µs IB1=–IB2=10mA
Tstg –40 to +150 °C
3 5 7 9
2 4 6 8
R1 R2
1 10
(VCE=4V) (VCE=4V)
5 20000 20000
mA 10000
2.0 10000
IB = typ
4
1.0m
A 5000
5000
A
0.8m
°C
3 0.6mA 25
=1
IC (A)
Ta °C
0.5mA 25
hFE
1000
0°
hFE
C
1000 –3
2 0.4mA 500
500
1
0.3mA
100
0 50 100
0 1 2 3 4 0.05 0.1 0.5 1 4 0.05 0.1 0.5 1 4
(IC / IB=1000) (VCE=–4V)
2 3 4
3
2
VCE (sat) (V)
VCE (sat) (V)
IC (A)
Ta=–30°C
1 2
25˚C
IC=4A
3A
125˚C 2A
1
°C
1A 1
–30°C
125
75°C
25°C
Ta =
0 0 0
0.1 0.5 1 4 0.2 0.5 1 5 10 50 100 0 1 2

30 5
24
10

0µ
Natural Cooling 1m
s
With Infinite Heatsink Heatsink: Aluminum s

20
in mm
10
10
ms
16
θ j–a (°C / W)
1
IC (A)
PT (W)
5 100×100×2
12 0.5
50×50×2
8.0
25×50×2
1.0 Without Heatsink Single Pulse

4.0 0.1 Without Heatsink
Ta=25°C
0.5
1 5 10 50 100 500 1000 0 0.05
–40 0 40 50 80 100 120 150 3 5 10 50 100
PW (ms) VCE (V)
Ta (°C)
174
STA457C

Ratings
Symbol NPN PNP Unit
VCBO 60 –60 V
VCEO 60 –60 V
VEBO 6 –6 V
IC 4 –4 A
4 (Ta=25°C)
PT W
20 (Tc=25°C)
Tj 150 °C
Tstg –40 to +150 °C
2 7
R3 R4
1 6
3 8
4 9
R1 R2
5 10
NPN PNP NPN
6 –6
(VCE=4V)
4
A
mA
m
A
0m –1.8
.3
.
–2
=4
IB =
IB mA –5 mA
2.0 –1.5
A
1.2m m A 3
4 –4 –1.2
0.8mA mA
–1.0
IC (A)
IC (A)
IC (A)
0.6mA –3 2
0.5mA mA
–0.8
0.4mA
25°C
2 –2 75°C
25°C
Ta=1
–30°C
1
–1
0 0 0
0 2 4 6 0 –1 –2 –3 –4 –5 –6 0 1 2

NPN PNP PNP
20000 10000 –4
10000 5000 typ

typ
5000
–3
1000
IC (A)
1000
hFE
hFE
500 –2
°C
75°C
25°C
–30°C
500
Ta=125
100 –1
100
50
50
30 20 0
0.03 0.05 0.1 0.5 1 4 –0.02 –0.05 –0.1 –0.5 –1 –4 0 –1 –2 –3

NPN PNP
(VCE=4V) (VCE=4V)
20000 10000
10000 5000
5000
1000 °C
°C 25
25 =1
hFE
=1 Ta °C
Ta 500 25 C
hFE
°C 0°
25 0°
C –3
1000 –3
500
100
50
100 20
0.05 0.1 0.5 1 4 –0.02 –0.05 –0.1 –0.5 –1 –4
IC (A) IC (A)
176
STA457C
NPN PNP
VCE(sat) 1.5 V –1.5 V
VBE(sat) 2.0 V –2.0 V
VFEC 1.6 V IFEC=2A –1.6 V IFEC=–2A
NPN PNP
3 –3 20
10
2 –2
VCE (sat) (V)
VCE (sat) (V)
θ j–a (°C / W)
IC=4A
IC=–4A
3A
1 2A –1 IC=–2A
1A
IC=–1A
1.0
0 0 0.5
0.2 0.5 1 5 10 50 100 –0.5 –0.1 –5 –10 –50 1 5 10 50 100 500 1000

NPN PNP
(IC / IB=1000) (IC / IB=1000) 24
2.0 –2
Natural Cooling
20
in mm
VCE (sat) (V)
16
VCE (sat) (V)
PT (W)
100×100×2
1.0 Ta=–30°C –1 Ta=–30°C 12
25°C 25°C
75°C 125°C
50×50×2
8.0
25×50×2
125°C
Without Heatsink
4.0
0 0 0
0.1 0.5 1 4 –0.5 –1 –4 –40 0 50 100 150
IC (A) IC (A)
Ta (°C)

NPN PNP
–10 –10
–5 –5
1m
1m
10
s
s
ms
10
ms
IC (A)
IC (A)
–1 –1
–0.5 –0.5

Ta=25°C Ta=25°C
–0.1 –0.1
–3 –5 –10 –50 –100 –3 –5 –10 –50 –100
VCE (V) VCE (V)
177
STA458C PNP+NPN

Ratings
Symbol NPN PNP Unit
VCBO 50 –50 V
VCEO 30 –30 V
VEBO 6 –6 V
IC 5 –5 A
ICP 10(PW≤10ms, Du≤50%) –10(PW≤10ms, Du≤50%) A
IB 1 –1 A
4 (Ta=25°C)
PT W
20 (Tc=25°C)
Tj 150 °C
Tstg –40 to +50 °C
TFSM 20 (Single half-cycle sinewave) A

2 7
R
1 6
3 8
4 9
R: 600Ω Typ 5 10
8.0 –8.0 10.0
A
mA
m
50
50
=1 mA
–1
IB 90
IB=
mA mA
6.0 70 –90
–6.0
A
50m –70mA
IC (A)
IC (A)
IC (A)
30mA –50mA
4.0 –4.0 5.0
–30mA
2.0 10mA –2.0

0°C
2 5° C
7 5°
–10mA
C
15
°C
Ta=
–40
0 0 0
0 1.0 2.0 3.0 0 –1.0 –2.0 –3.0 0 0.5 1.0 1.5

500 500 –10.0
typ
typ
IC (A)
hFE
hFE
100 100 –5.0
50 50
C
°C
75°
C
°C
150
25°
–40
Ta=
20 20 0
0.02 0.5 0.1 0.5 1 5 10 –0.02 –0.05 –0.1 –0.5 –1 –5 –10 0 –0.5 –1.0 –1.5

NPN PNP
500 500
°C
50
=1
Ta
75°
C
°C
25°
C 50
=1
Ta
hFE
°
hFE
100 C °C
–40 100 75
°C
25
0°
C
50 50 –4
20 20
0.05 0.1 0.5 1 5 10 –0.05 –0.1 –0.5 –1 –5 –10
IC (A) IC (A)
178
STA458C
NPN PNP
70 VCE=1V, IC=1A 70 VCE=–1V, IC=–1A
hFE
40 VCE=1V, IC=4A 40 VCE=–1V, IC=–4A
trr 2.0 µs IF=IR=100mA 2.0 µs IF=IR=100mA
NPN PNP
2 –2 20
10
VCE (sat) (V)
θ j–a (°C / W)
5
VCE (sat)
1 IC=5A –1
3A
2A IC=–5A 1.0
1A –2A –3A
–1A
0 0 0.5
0.005 0.001 0.05 0.1 0.5 1 –0.005 –0.01 –0.05 –0.1 –0.5 –1 1 5 10 50 100 500 1000

(IC / IB=20) –1.5
1.5 24
Natural Cooling
20
in mm
1.0 –1.0
VCE (sat) (V)
16
VCE (sat) (V)
PT (W)
100×100×2
Ta=150°C 12
75°C Ta=150°C
50×50×2
0.5 –0.5 75°C 8.0
25°C
25×50×2
25°C
–40°C Without Heatsink
4.0
0 –40°C
0 0
0.02 0.05 0.1 0.5 1 5 10 20 –0.02 –0.05 –0.1 –0.5 –1 –5 –10 –20
–40 0 50 100 150
IC (A) IC (A)
Ta (°C)

NPN PNP
10 –10
1mS
10m
ec
5 –5
Sec
10m
1m
Se
Se
c
c
IC (A)
IC (A)
1 –1
0.5 –0.5

Ta=25°C Ta=25°C
0.2 –0.2
2 5 10 30 50 –2 –5 –10 –30 –50
VCE (V) VCE (V)
179
STA460C
NPN Darlington

Specification
Symbol Ratings Unit Symbol min typ max Ratings Unit

VCEO 60±10 V IEBO 10 µA VEB=6V
IC ±6 A hFE 700 1500 3000 VCE=1V, IC=1A
ICP ±10 (PW≤1ms, Du≤50%) A VCE(sat) 0.09 0.15 V IC=1.5A, IB=15mA
3.2 (Ta=25°C) VFEC 1.25 1.5 V IFEC=6A
PT W
18 (Tc=25°C) ES/B 200 mJ L=10mH, Single pulse
Tj 150 °C
Tstg –40 to +150 °C
3 8
2 7
4 9
(VCE=1V) (VCE=1V)
10 5000 5000
9 Ta=125°C
typ
mA
A
20
m
8
30
75°C 25°C
IB=
7 1000
1000 –55°C
10mA
6
IC (A)
500
hFE
500
hFE
5
5mA
4
3mA
3
100
2 100
1mA
1 50
50
30
0 30 0.01 0.05 0.1 0.5 1 5 10
0 1 2 3 4 5 0.01 0.05 0.1 0.5 1 5 10
IC (A)
VCE (V) IC (A)
(IC / IB=100) (VCE=1V)
0.75 0.75 6
Ta=–55˚C
0.5 0.5 4
VCE (sat) (V)
25˚C
VCE (sat) (V)
IC (A)
75˚C
125˚C
3
0.25 0.25
25°C
2
Ta=1
IC=3A
–55°C
25°C
1 75°C
1.5A
0.5A
0 0 0
0.01 0.05 0.1 0.5 1 5 10 1 5 10 50 100 500 0 0.5 1.0 1.5

20 20 20
Natural Cooling
0.5
10 10
ms
1m
10
s
ms
5 5
15
W
ith
In f
θ j–a (°C / W)
init
PT (W)
IC (A)
eH
ea
1 10 1
tsin
k
0.5 0.5
5
Without Heatsink
Single Pulse
0.1 0.1 Without Heatsink
Ta=25°C
0.05 0
0.1 0.5 1 5 10 50 100 500 1000 2000 0.05
–55 0 50 100 150 0.5 1 5 10 50 100
180

Specification

IC 2 A hFE 2000 5000 10000 VCE=4V, IC=1A
IC=1A, IB=2mA
IB 0.5 A VBE(sat) 1.8 2.2 V
4 (Ta=25°C) VFEC 1.3 1.8 V IFEC=1A
PT W
20 (Tc=25°C) ton 0.5 µs VCC 30V,
3 5 7 9
2 4 6 8
R1 R2
1 10
4
(VCE=4V) (VCE=4V)
10000 10000
mA
10.0 Typ
IB= A 5000 5000
5.0m
A °C
3 2.0m 25
=1 °C
A Ta 75 °C
1.0m 25 C
1000 1000 0°
IC (A)
A –3
0.6m
hFE
hFE
2 A
0.4m 500 500
A
0.3m
1
100 100
50
50
0 30 30
0 1 2 3 4 5 6 0.02 0.05 0.1 0.5 1 4 0.02 0.05 0.1 0.5 1 4
(IC / IB=1000) (IC=1A) (VCE=4V)
3 3 4
5°C
–30°C
75°C
25°C
Ta=12
–30°C
25°C
75°C
Ta=125°C
3
VCE (sat) (V)
2 2
VCE (sat) (V)
IC (A)
1 1
1
75 25 °C
1
–30°C
T a=
°C
°C
25
0 0 0
0.2 0.5 1 3 0.1 0.5 1 3 0 1 2 3
30 24 5
Natural Cooling 1m
With Infinite Heatsink Heatsink: Aluminum s
20
100µs
in mm
10
10
ms
16
θ j–a (°C / W)
1
PT (W)
IC (A)
5 100×100×2
12 0.5
50×50×2
8.0
25×50×2
Without Heatsink Single Pulse
1 4.0 0.1 Without Heatsink
Ta=25°C
0.5 0 0.05
0.2 0.5 1 5 10 50 100 500 1000 –40 0 50 100 150 3 5 10 50 100
181
STA472A
PNP Darlington

Specification

IC –2 A hFE 2000 4000 10000 VCE=–4V, IC=–1A
IC=–1A, IB=–2mA
IB –0.5 A VBE(sat) –1.9 –2.2 V
4 (Ta=25°C) VFEC –1.3 –1.8 V IFEC=–1A
PT W
20 (Tc=25°C) ton 0.4 µs VCC –30V,
Tj 150 °C tstg 1.0 µs IC=–1A,
Tstg –40 to +150 °C tf 0.4 µs IB1=–IB2=–2mA
1 R1 R2 10
2 4 6 8
3 5 7 9
–4 10000 10000
–5.0mA
75°C
mA
5000 5000
0.0
25°C
–2.0mA
–1
typ
IB=
–3
–1.2mA °C
25
–1.0mA =1
1000 1000 Ta
IC (A)
hFE
–0.8mA
hFE
–2
0°
–0.6mA 500 C
500
–3
–0.5mA
–0.4mA
–1
–0.3mA
100 100
0 50 50
0 –1 –2 –3 –4 –5 –6 –0.02 –0.05 –0.1 –0.5 –1 –4
–0.02 –0.05 –0.1 –0.5 –1 –4
(IC / IB=1000) (IC=–1A) (VCE=–4V)
–3 –3 –4
Ta=125°C
25°C
75°C –3
–30°C
–2 –2
VCE (sat) (V)
VCE (sat) (V)
IC (A)
–2
°C
Ta=–30
–1 75°C 25°C –1
125°C –1
75 25°C
=1
°C
°C
0°C
Ta
25
–3
0 0 0
–0.2 –0.5 –1 –4 –0.1 –0.5 –1 –5 0 –1 –2 –3

20 24 –5
Natural Cooling 10
With Infinite Heatsink 0µ
20 Heatsink: Aluminum s
10 in mm
1m
10
s
m
–1
s
16
θ j–a (°C / W)
5
PT (W)
100×100×2
IC (A)
–0.5
12
50×50×2
8.0
25×50×2
–0.1
1 Without Heatsink
4.0
Single Pulse
0.5 0 –0.03 Ta=25°C
0.2 0.5 1 5 10 50 100 500 1000 –40 0 50 100 150 –3 –5 –10 –50 –100
PW (mS) VCE (V)
Ta (°C)
182
STA473A
NPN Darlington

Specification

IC 2 A hFE 2000 5000 12000 VCE=4V, IC=1A
IC=1A, IB=2mA
IB 0.5 A VBE(sat) 1.8 2.2 V
4 (Ta=25°C) VFEC 1.3 1.8 V IFEC=1A
PT W
20 (Tc=25°C) ton 0.5 µs VCC 30V,
3 5 7 9
2 4 6 8
R1 R2
1 10
R1: 4kΩ Typ R2: 150Ω Typ
(VCE=4V) (VCE=4V)
4 20000 20000
10000 10000
A
0.0m typ
IB-1 75°C
A 5000 5000
3 4.0m 25°C
A
2.0m 1.2m
A
A
0.6m
IC (A)
hFE
2 0.4mA 1000 1000

hFE
°C
0.3mA 25
500 500 =1
Ta
0°
1 C
–3
100 100
50 50
0 30 30
0 1 2 3 4 5 6 0.02 0.05 0.1 0.5 1 4 0.02 0.05 0.1 0.5 1 4
(IC / IB=1000) (IC=1A) (VCE=4V)
3 3 4
5°C
Ta=125°C
–30°C
25°C
75°C
Ta=12
75°C
3
25°C
2
VCE (sat) (V)
2
VCE (sat) (V)
–30°C
IC (A)
1 1
1
5°C
25 5°C
12
7
–3 C
Ta=
0°C
°
0 0 0
0.2 0.5 1 4 0.1 0.5 1 5 0 1 2 3

20 24 5
10
10
Natural Cooling m 1m
0µ
With Infinite Heatsink s s

Heatsink: Aluminum
s
20
10 in mm
1
16
θ j–a (°C / W)
5
PT (W)
100×100×2
IC (A)
0.5
12
50×50×2
8.0
25×50×2
0.1
1 Without Heatsink
4.0
Single Pulse
0.05
Without Heatsink
0.5 0 0.03 Ta=25°C

0.2 0.5 1 5 10 50 100 500 1000 –40 0 50 100 150 3 5 10 50 100 200
PW (mS) VCE (V)
Ta (°C)
183

Specification

IC 2 A hFE 2000 5000 12000 VCE=4V, IC=1A
ICP 4 (PW≤1ms, Du≤25%) A VCE(sat) 1.5 V
IC=1A, IB=2mA
IB 0.5 A VBE(sat) 2.2 V
4 (Ta=25°C) VFEC 1.8 V IFEC=1A
PT W
20 (Tc=25°C) ton 0.6 µs VCC 30V,
3 5 7 9
2 4 6 8
R1 R2
1 10
(VCE=4V) (VCE=4V)
4 20000 20000
A
A
5m 2mA
10m
10000 10000
IB=
Typ
1mA
3 5000 5000
0.5mA
°C
25
IC (A)
=1 °C
Ta 75 °C
25
hFE
hFE
2 0.3mA 1000 1000

0°
C
–3
500 500
1 0.2mA
100 100
0 50 50
0 1 2 3 4 5 6 0.03 0.05 0.1 0.5 1 4 0.03 0.05 0.1 0.5 1 4
VCE (V) IC (A)
IC (A)
(IC / IB=1000) (VCE=4V)
3 3 4
2 2
VCE (sat) (V)
(V)
IC=4A
IC (A)
(sat)
2
VCE
25°C IC=2A
75°C
Ta=–30°C
1 1 IC=1A
1
°C
125˚C
125
C
25°C
–30°C
75 °
Ta=
0 0
0
0 1 2 3
0.3 0.5 1 4 0.1 0.5 1 5 10 50 100
IC (A) VBE (V)
IB (mA)

20 24 5
50
With Silicone Grease 10 µs
0µ
Natural Cooling s
20 1m
in mm s
10 10
m
s
16 1
θ j–a (°C / W)
PT (W)
100×100×2
5 0.5
IC (A)
12
50×50×2
8.0
25×50×2
0.1
Without Heatsink
4.0
Single Pulse
Ta=25°C
1 0 0.03
1 5 10 50 100 500 1000 –40 0 50 100 150 3 5 10 50 100 200
184

Specification

IC 1 A hFE 2000 5000 10000 VCE=4V, IC=0.5A
ICP 2.5 (PW≤1ms, Du≤25%) A VCE(sat) 1.0 1.5 V
IC=0.5A, IB=1mA
IB 0.5 A VBE(sat) 1.6 2.2 V
4 (Ta=25°C) VFEC 1.4 1.8 V IFEC=0.5A
PT W
16 (Tc=25°C) ton 0.5 µs VCC 30V,
Tj 150 °C tstg 2.5 µs IC=0.5A,
3 5 7 9
2 4 6 8
R1 R2
1 10
2.5
(VCE=4V) (VCE=4V)
10000 10000
A
50m
A
mA
5m typ
IB =
10
2 A
2m
5°
C
A
1m 12
1000 °C
75
1.5 mA 1000
0.5 °C
25
IC (A)
hFE
hFE
A
0.3m 0°
C
–3
1
100 100
0.5
0 30 30
0 1 2 3 4 5 6 0.01 0.1 1 2.5 0.01 0.1 1 2.5
(IB=2mA) (IC=0.5A) (VCE=4V)
3 3 2.5
2 2
VCE (sat) (V)
VCE (sat) (V)
1.5
IC (A)
25°C –30°C
1
1 25°C –30°C 1
125°C 0.5
°C
C
125
–30°C
125°C 75°C
25°C
75°C
75°
0 0 0
0.01 0.1 1 5 0.05 0.1 1 10 100 0 1 2 3

30 20 5
Natural Cooling
10
Heatsink: Aluminum
0µ
S
1m
15 1
S
10
θ j–a (°C / W)
10
W
mS
PT (W)
ith
IC (A)
In
fin
10
ite
5
He
at
sin
0.1
k
5 Without Heatsink
Single Pulse
Without Heatsink
1 Ta=25°C
0 0.01
1 10 100 1000 –40 0 50 100 150 1 10 100
185
STA485A
NPN Darlington

Specification
Symbol Ratings Unit ymbol min typ max Unit Conditions

IC 1 A hFE 2000 5000 10000 VCE=4V, IC=0.5A
IC=0.5A, IB=1mA
IB 0.5 A VBE(sat) 1.6 2.2 V
4 (Ta=25°C) VFEC 1.4 1.8 V IFEC=0.5A
PT W
16 (Tc=25°C) ton 0.5 µs VCC 30V,
Tj 150 °C tstg 2.5 µs IC=0.5A,
Cob 14 pF VCE=10V, f=1MHz
3 5 7 9
2 4 6 8
R1 R2
1 10
(VCE=4V) (VCE=4V)
2.5 10000 20000
A
2m
A
5m
10000
A 5000 typ
IB=
1m
2
A
0.5m
A
0.3m 1000
1.5
1000
IC (A)
hFE
hFE
5°
500 C
A 12
0.2m
°C
1 75
°C
25
0°
100 C
100 –3
0.5
50
0 20 30
0 1 2 3 4 5 6 0.01 0.1 1 2.5 0.01 0.1 1 2.5
(IB=2mA) (IC=0.5A) (VCE=4V)
3 3 2.5
125°C
75°C
2
25°C
–30°C
2 2
VCE (sat) (V)
VCE (sat) (V)
1.5
IC (A)
25°C –30°C 1
1 1
0.5
125°C
5 °C
C
°C
C
7 5°
25°
12
75°C
–30
0 0 0
0.01 0.1 1 5 0.05 0.1 1 10 100 0 1 2 3

30 20 5
Natural Cooling
Heatsink: Aluminum
10
0µ
S
15
10
1
m
S
θ j–a (°C / W)
10
ith
1m
PT (W)
In
IC (A)
S
fin
i
te
10
He
at
sin
k
5 0.1
5 Without Heatsink
Single Pulse
Without Heatsink
2 Ta=25°C
1 5 10 50 100 500 1000 0 0.01
–40 0 50 100 150 1 10 100 200
186
STA501A
N-channel

Specification
min typ max
ID(pulse) ±20 (PW≤100µs, Du≤1%) A VTH 1.0 2.0 V VDS=10V, ID=250µA
4 (Ta=25°C) W Re(yfs) 2.0 S VDS=10V, ID=2.5A
PT
20 (Tc=25°C) W 0.15 0.20 Ω VGS=10V, ID=2.5A
RDS(ON)
Tch 150 °C 0.23 0.28 Ω VGS=4V, ID=2.5A
Tstg –40 to +150 °C Ciss 400 pF VDS=25V,
Coss 160 pF f=1.0MHz,
Crss 35 pF VGS=0V
td(on) 20 ns ID=2.5A,
tr 25 ns VDD 30V,
3 5 7 9
td(off) 40 ns RL=12Ω,
tf 20 ns VGS=5V, see Fig. 3 on page 16.
2 4 6 8 VSD 1.0 1.5 V ISD=5A, VGS=0V
1 10
187
STA504A
N-channel

Specification
min typ max
4 (Ta=25°C) W Re(yfs) 1.2 S VDS=10V, ID=2A
PT
20 (Tc=25°C) W RDS(ON) 0.33 0.45 Ω VGS=10V, ID=2A
Tch 150 °C Ciss 120 pF VDS=25V,
Tstg –40 to +150 °C Coss 60 pF f=1.0MHz,
Crss 14 pF VGS=0V
3 5 7 9
2 4 6 8
1 10
188
STA505A
N-channel

Specification
min typ max
4 (Ta=25°C) W Re(yfs) 2.0 3.0 S VDS=10V, ID=1.5A
PT
20 (Tc=25°C) W 0.35 0.50 Ω VGS=10V, ID=1.5A
RDS(ON)
Tch 150 °C 0.40 0.60 Ω VGS=4V, ID=1.5A
Coss 60 pF f=1.0MHz,
Crss 12 pF VGS=0V
3 5 7 9
2 4 6 8
1 10
189
STA506A N-channel

Specification
min typ max
EAS* 5.6 mJ Re(yfs) 1.5 2.0 S VDS=10V, ID=1A
4 (Ta=25°C) W 0.55 0.80 Ω VGS=10V, ID=1A
PT RDS(ON)
20 (Tc=25°C) W 0.70 0.95 Ω VGS=4V, ID=1A
Tch 150 °C Ciss 150 pF VDS=25V,
Tstg –40 to +150 °C Coss 45 pF f=1.0MHz,
* : VDD=25V, L=2.2mH, IL=2A, unclamped, RG=50Ω, see Fig. E on page 15. Crss 9 pF VGS=0V
td(on) 15 ns ID=1A,
tr 30 ns VDD 50V,
td(off) 40 ns RL=50Ω,
3 5 7 9
tf 30 ns VGS=5V, see Fig. 3 on page 16.
2 4 6 8 trr 160 ns ISD=±100mA
1 10
(VDS=10V)
5 5 0.8
10V 5V TC=–40°C
VGS=4V
4V
4 4 VGS=10V
0.6
(Ω)
3 3
ID (A)
ID (A)
(ON)
3.5V
25°C
0.4
RDS
125°C
2 2
VGS=3V
0.2
1 1
0 0 0
0 2 4 6 8 10 0 2 4 6 0 1 2 3 4 5
VGS=0V
5 1.5 500
TC=–40°C
25°C Ciss
Capacitance (pF)
125°C VGS=4V
Re (yfs) (S)
1.0 100
(Ω)
(ON)
VGS=10V 50 Coss
RDS
0.5
0.5
10
Crss
0.3 0 5
0.05 0.1 0.5 1 5 –40 0 50 100 150 0 10 20 30 40 50
ID (A) VDS (V)
TC (°C)
IDR-VSD Characteristics (Typical) PT-Ta Characteristics Safe Operating Area (SOA)

5 10 30
I D (pulse) max With Silicone Grease

10
0µ
ED
s
IT
M
1m
20
LI
N)
10
s
(O
IDR (A)
3
PT (W)
DS
s
R
(1
ID (A)
W
s
15 ith
ho
1 In
t)
10V fin
ite
2 He
4V at
0.5 10 sin
k
VGS=0V
0.1 0
0 0 50 100 150
0 0.5 1.0 1.5 0.5 1 5 10 50 100
190
SDA01 PNP Darlington
General purpose External dimensions E ••• SD

Specification

IC –1.5 A hFE 2000 12000 VCE=–4V, IC=–1A
ICP –2.5 (PW≤1ms, Du≤10%) A VCE(sat) –1.4 V
IC=–1A, IB=–2mA
PT 3 (Ta=25°C) W
Tj 150 °C
Tstg –40 to +150 °C
θ j–a 41.6 °C/W
2 4 6 8
R1 R2
1 3 5 7
15,16 13,14 11,12 9,10
–2.5 10000 10000
IB=–5mA A
–1.2m
–2mA A
–1.0m 5000 5000
–2.0 typ
A
–0.8m
°C
A 25 C
–1.5 –0.6m =1 °
Ta 75 °C
1000 25 C
IC (A)
–0.5mA
1000
0°
hFE
hFE
–3
–0.4mA 500 500
–1.0
–0.3mA
–0.5
100 100
0 50 50
0 –1 –2 –3 –4 –5 –6 –0.03 –0.05 –0.1 –0.5 –1 –2.5 –0.03 –0.05 –0.1 –0.5 –1 –2.5
(IC / IB=1000) (VCE=–4V)
–3 –2.5
–3
–2.0
–2 –2
VCE (sat) (V)
VCE (sat) (V)
–1.5
IC (A)
IC=–2A
°C
C
–30°C
C
125
75°
–1.0
°C
25°
IC=–1A
–30
Ta=
–1 25°C Ta=125°C –1
IC=–0.5A
75°C –0.5
0 0 0
–0.2 –0.5 –1 –2.5 –0.1 –0.5 –1 –5 –10 –50 0 –1 –2 –3

50 3 –5
4
1-1 Chip Operation
3 2-2 Chip Operation
3-3 Chip Operation
10
4-4 Chip Operation

0µ
s
2
1m
2
s
–1
10
θ j–a (°C / W)
m
s
10
PT (W)
IC (A)
1 –0.5
5
1
Single Pulse
Ta=25°C
1 0 –0.05
1 5 10 50 100 500 1000 0 50 100 150 –3 –5 –10 –50 –100
191
SDA05 PNP Darlington
3-phase motor drive External dimensions E ••• SD

Specification

IC –4 A hFE 2000 12000 VCE=–4V, IC=–3A
IC=–3A, IB=–6mA
PT 2.6 (Ta=25°C) W VFEC 1.8 V IFEC=1A
Tj 150 °C ton 0.4 µs VCC –30V,
Tstg –40 to +150 °C tstg 0.8 µs IC=–3A,
fT 200 MHz VCE=–12V, IE=0.2A
2 4 8
R1 R2
1 3 7
15,16 13,14 9,10
R1: 2kΩ typ R2: 150Ω typ *Pins 5, 6, 11, 12 : NC
–6 10000 10000
A
–1.8m
–1.5mA
A
.2m
5000 typ 5000

–2
–1.2mA
IB=
–1.0mA
–4 –0.9mA °C
IC (A)
25
–0.8mA 1000 1000 =1
Ta
hFE
hFE
0°
500 500 C
–3
–2
75°C
25°C
100 100
0 50
50
0 –2 –4 –6 –0.03 –0.05 –0.1 –0.5 –1 –5 –6
–0.03 –0.05 –0.1 –0.5 –1 –5 –6
VCE (V) IC (A)
IC (A)
(IC / IB=1000) (VCE=–4V)
–3 –6
–3
–5
–2 –2 –4
VCE (sat) (V)
VCE (sat) (V)
IC (A)
25°C –3 75°C
75°C IC=–4A 25°C
–1 Ta=–30°C –1 IC=–2A –2
25°C
IC=–1A
–30°C
Ta=1
125°C –1
0 0 0
–0.5 –1 –5 –6 0 –1 –2 –3
IC (A) –0.3 –0.5 –1 –5 –10 –50 –100 –200
VBE (V)
IB (mA)
20 3
–10
1-1 Chip Operation
3-3 Chip Operation –5
1m
10
10
s
m
s
2
θ j–a (°C / W)
5
–1
PT (W)
1
IC (A)
–0.5
1 –0.1
Single Pulse
0.5 0 Ta=25°C
–0.03
1 5 10 50 100 500 1000 0 50 100 150 –3 –5 –10 –50 –100
192
SDC01 NPN

Specification

VCEO 50 V ICES 100 µA VCES=50V
VEBO 6 V IEBO 10 µA VEB=6V
IC 2 A VCEO 50 V IC=10mA
ICP 3 (PW≤1ms, Du≤10%) A hFE 500 2000 VCE=4V, IC=0.5A
IB 0.5 A VCE(sat) 0.4 V
IC=0.5A, IB=5mA
PT 3 (Ta=25°C) W VBE(sat) 1.1 V
Tj 150 °C fT 40 MHz VCE=12V, IE=–0.1A
Tstg –40 to +150 °C
θ j–a 41.6 °C/W
15,16 13,14 11,12 9,10
1 3 5 7
2 4 6 8
IB=100mA (VCE=4V) (VCE=4V)
1.8 2000 2000
Ta=125°C
mA
30
1.6 75°C
mA
25°C
10
A 1000
5m 1000
1.4 –30°C
3mA
1.2
2mA 500 500
IC (A)
1.0
hFE
hFE
0.8
1mA
0.6
0.4
100 100
0.2
0 50 50
0 1 2 3 4 5 6 0.01 0.1 1 3 0.01 0.1 1 3
(IC / IB=500) (IC=0.5A) (VCE=4V)
1.5 1.5 1.8
1.6
1.4
1.0 1.0 1.2

VCE (sat) (V)
VCE (sat) (V)
Ta=125°C
IC (A)
Ta=125°C 1.0
75°C
25°C 75°C 0.8

–30°C 25°C
25°C
0.5 0.6
75°C
0.5 –30°C
25°C
–30°C
Ta=1
0.4
0.2
0 0 0
0.05 0.1 0.5 1 0.5 1 10 100 0 0.5 1.0 1.5

50 3 5
4
1-1 Chip Operation
3 2-2 Chip Operation 100µs
3-3 Chip Operation
4-4 Chip Operation
2
1m
s
10
2
m
θ j–a (°C / W)
10 1
s
PT (W)
IC (A)
Single Pulse
Ta=25°C
0.5 0 0.05
0.1 1 10 100 1000 0 50 100 150 1 10 100
193
SDC03 NPN Darlington
With built-in avalanche diode External dimensions E ••• SD

Specification

VCEO 60±10 V IEBO 1.1 3.5 mA VEB=6V
IC 1.5 A hFE 2000 5000 12000 VCE=4V, IC=1A
IC=1A, IB=2mA
IB 0.1 A VBE(sat) 1.8 2.2 V
PT 3 (Ta=25°C) W VFEC 1.3 1.8 V IFEC=1A
Tj 150 °C ton 0.5 µs VCC 30V,
Tstg –40 to +150 °C tstg 4.0 µs IC=1A,
θ j–a 41.6 °C/W tf 1.0 µs IB1=–IB2=2mA
15,16 13,14 11,12 9,10

1 3 5 7
R1 R2
2 4 6 8
2.5
(VCE=4V) (VCE=4V)
10000 10000
IB=10mA
A
2m
typ
A
mA
1m
5000 5000
0.6
2.0
m A °C
0.4 25
=1 5°C
Ta 7
A °C
0.3m 25 C
1.5 0°
1000 1000 –3
IC (A)
hFE
hFE
1.0 500 500
0.5
100 100
0 50 50
0 1 2 3 4 5 6 0.03 0.05 0.1 0.5 1 2.5 0.03 0.05 0.1 0.5 1 2.5
(IC / IB=1000) (VCE=4V)
3 3 2.5
2.0
Ta=125°C
2 2
VCE (sat) (V)
VCE (sat) (A)
75°C 1.5
IC (A)
25°C IC=2A
75°C °C
–30°C
1.0
125
1A
25°C
Ta=
–30°C
1 1 0.5A
0.5
0 0 0
0.2 0.5 1 2.5 0.1 0.5 1 5 10 50 100 0 1 2 3

50 3 5
4
1-1 Chip Operation
10

0µ
3-3 Chip Operation

S
1m
4-4 Chip Operation

2
S
10
θ j–a (°C / W)
mS
2 1
10
IC (A)
PT (W)
1 0.5
5
1
Single Pulse
Ta=25°C
1 0 0.05
1 5 10 50 100 500 1000 0 50 100 150 3 5 10 50 100
194

Specification

VCEO 100±15 V IEBO 1 3 mA VEB=6V
IC 1.5 A hFE 2000 5000 12000 VCE=4V, IC=1A
IC=1A, IB=2mA
IB 0.1 A VBE(sat) 1.7 2.2 V
PT 3 (Ta=25°C) W VFEC 1.2 1.8 V IFEC=1A
θ j–a 41.6 °C/W tf 1.0 µs IB1=–IB2=2mA
15,16 13,14 11,12 9,10

1 3 5 7
R1 R2
2 4 6 8
(VCE=4V) (VCE=4V)
2.5 20000 20000
IB=5mA A
0.5m
1mA 10000 10000
typ
2.0
5000 5000
A
0.3m °C
25
=1 °C
Ta 75 C
1.5 °
25
IC (A)
hFE
0°
hFE
C
1000 1000 –3
1.0 500
0.2mA 500
0.5
100 100
0 50 50
0 1 2 3 4 5 6 0.03 0.05 0.1 0.5 1 2.5 0.03 0.05 0.1 0.5 1 2.5
(IC / IB=1000) (VCE=4V)
2 3 2.5
2.0
2
VCE (sat) (V)
VCE (sat) (V)
IC=4A
1.5
IC (A)
1
Ta=125°C IC=2A
1.0
°C
75°C
125
1
75°C
IC-1A
25°C
Ta=
25°C
–30°C
–30°C 0.5
0 0 0
0.3 0.5 1 2.5 0.1 0.5 1 5 10 50 100 0 1 2 3

50 3 5
4
1-1 Chip Operation
10
3-3 Chip Operation 0µ
s
4-4 Chip Operation 1m
2 s
1 10
2 ms
θ j–a (°C / W)
10 0.5
PT (W)
IC (A)
5
1
0.1
Single Pulse
1 0 Ta=25°C
0.03
1 5 10 50 100 500 1000 0 50 100 150 3 5 10 50 100
195
SDC06
NPN

Specification
VCBO 30 to 45 V ICBO 10 µA VCB=30V

VCEO 30 to 45 V IEBO 1.2 2.8 mA VEB=6V
VEBO 6 V VCEO 30 45 V IC=10mA
IC 2 A hFE 400 700 2000 VCE=4V, IC=0.5A
ICP 3 (PW≤1ms, Du≤10%) A 0.2 V IC=0.5A, IB=5mA
VCE(sat)
IB 30 mA 0.6 V IC=1A, IB=5mA
PT 3 (Ta=25°C) W VFEC 2.0 V IFEC=1A
Tstg –40 to +150 °C tstg 18.0 µs IC=0.5A,
θ j–a 41.6 °C/W tf 3.6 µs IB1=5mA, IB2=0A
ES/B 40 mJ L=10mH, Single pulse
15,16 13,14 11,12 9,10
1 3 5 7
RB RB RB RB
RBE RBE RBE RBE

2 4 6 8
RB: 800Ω typ RBE: 2kΩ typ
(VCE=4V) (VCE=4V)
3 1000 1000
IB=30mA
A
m
8mA typ
12
5mA
500 500
2
Ta=125°C
3mA
hFE
IC (A)
75°C
hFE
2mA
25°C
1 –30°C
1mA
0 100 100
0 1 2 3 4 5 6 0.03 0.05 0.1 0.5 1 3 0.03 0.05 0.1 0.5 1 3
(IC / IB=100)
3 1
2
VCE (sat) (V)
VCE (sat) (V)

°C
25
C
°C
75°
=1
25
Ta
1
IC=1A
–30°C IC=0.5A
0 0
0.2 0.5 1 3 1 5 10 30
IC (A) IB (mA)

50 3 5
4
1-1 Chip Operation
3 2-2 Chip Operation 1mS
3-3 Chip Operation
4-4 Chip Operation
2
2
θ j–a (°C / W)
10 1
PT (W)
IC (A)
5 0.5
1
Single Pulse
Without Heatsink
1 0 Ta=25°C
0.1
1 5 10 50 100 500 1000 0 50 100 150 5 10 50
196
3-phase motor drive External dimensions E ••• SD

Specification

IC 4 A hFE 2000 12000 VCE=4V, IC=3A
ICP 6 (PW≤1ms, Du≤50%) A VCE(sat) 1.5 V
IC=3A, IB=6mA
IB 0.5 A VBE(sat) 2.0 V
PT 2.6 (Ta=25°C) W VFEC 1.8 V IFEC=1A
tf 1.5 µs IB1=–IB2=10mA
15,16 13,14 9,10
1 3 7
R1 R2
2 4 8
R1: 3kΩ typ R2: 200Ω typ *Pins 5, 6, 11, 12 : NC
(VCE=4V) (VCE=4V)
6 20000 20000
IB=4.0mA
2.0mA
10000 10000
Typ
1.2mA 5000 5000
°C
4 25
0.8mA =1 °C
Ta 75
°C
IC (A)
25
0°
C
hFE
0.6mA
1000 1000 –3
hFE
0.5mA
500 500
0.4mA
2
100 100
0 50 50
0 2 4 6 0.03 0.05 0.1 0.5 1 56 0.03 0.05 0.1 0.5 1 56
(IC / IB=1000) (VCE=4V)
3 3 6
5
75°C
25°C
°C
°C
2 2 4
VCE (sat) (V)
125
VCE (sat) (V)

–30
Ta=
IC (A)
3
IC=4A
75°C °C
IC=2A
1 1 2
125
25°C
IC=1A
Ta=
–30°C
0 0 0
0.5 1 5 6 0.2 0.5 1 5 10 50 100 200 0 1 2 3
IC (A) VBE (V)
IB (mA)
20 3
10
1-1 Chip Operation
3 2-2 Chip Operation 5
3-3 Chip Operation
1m
10
10
2
ms
2
θ j–a (°C / W)
5
PT (W)
1
1
IC (A)
0.5
1 0.1
Single Pulse
Ta=25°C
0.5 0 0.03
1 5 10 50 100 500 1000 0 50 100 150 3 5 10 50 100
197
SDH02
NPN Darlington
With built-in flywheel diode External dimensions E ••• SD

Specification

IC 1.5 A hFE 2000 6000 12000 VCE=4V, IC=1A
IB 0.2 A IC=1A, IB=2mA
VBE(sat) 1.7 2.2 V
IF 1.5 A ton 0.5 µs VCC 30V,
IFSM 2.5 (PW≤0.5ms, Du≤10%) A tstg 4.5 µs IC=1A,
VR 120 V
tf 1.2 µs IB1=–IB2=2mA
PT 3 (Ta=25°C) W
Tj 150 °C
Tstg –40 to +150 °C
●Diode for flyback voltage absorption (Ta=25°C)
Specification
16 15 14 13 12 11 10 9
VR 120 V IR=10µA
1 VF 1.6 V IF=1A
3 5 7
IR 10 µA VR=120V
R 1 R2 trr 100 ns IF=±100mA
2 4 6 8
(VCE=4V) (VCE=4V)
2.5 10000 10000
IB=10mA A A mA
4m 2m 1.2 typ
A
0.6m 5000 5000
2.0 A
0.4m °C
25 C
=1 °
0.3mA Ta 75 C
°
25 C
1.5 0°
–3
IC (A)
hFE
hFE
1000 1000
1.0
500 500
0.5
0 100 100
1 2 3 4 5 6 0.03 0.05 0.1 0.5 1 2.5 0.03 0.05 0.1 0.5 1 2.5
(IC / IB=1000) (VCE=4V)
3 3 2.5
2.0
2 2
VCE (sat) (V)
VCE (sat) (V)
1.5
IC (A)
IC=2A
1.0
°C
–30°C
75°C
IC=1A
25°C
125
1
–30°C
1 25°C
IC=0.5A
Ta =
Ta=125°C
75°C 0.5
0 0 0
0.2 0.5 1 2.5 0.1 0.5 1 5 10 50 100 0 1 2 3

50 3 5
4
1-1 Chip Operation
3-3 Chip Operation
10
0µ
4-4 Chip Operation

s
2
1m
s
2 1
10
m
θ j–a (°C / W)
10
PT (W)
0.5
IC (A)
5
1
0.1
Single Pulse
0 Ta=25°C
1 0.03
1 5 10 50 100 500 1000 0 50 100 150 3 5 10 50 100
198
SDH03
H-bridge External dimensions E ••• SD

Ratings
Symbol NPN PNP Unit
VCBO 100 –60 V

VCEO 100 –60 V
VEBO 6 –6 V
IC 1.5 –1.5 A
ICP 2.5 (PW≤1ms, Du≤100%) –2.5 (PW≤1ms, Du≤10%) A
IB 0.1 –0.1 A
PT 3 (Ta=25°C) W
Tj 150 °C
Tstg –40 to +150 °C
θ j–a 41.6 °C/W

2 6
R 3 R4
R3: 4kΩ typ
1 5 R4: 100Ω typ
15 16 11 12
13 14 9 10
3 7 R1: 4kΩ typ

R2: 200Ω typ
R1 R2
4 8
NPN PNP NPN
(VCE=4V)
2.5 –2.5 2.5
IB=10mA A mA –1.2mA
A
A
4m 2m 1.2
–2m
A
A
IB=–5m
0.6m –1.0mA
2.0 0.4m
A –2.0 2.0
–0.8mA
0.3mA
1.5 –1.5 –0.6mA 1.5
IC (A)
IC (A)
IC (A)
–0.5mA
1.0 –1.0 –0.4mA 1.0

°C
75°C
25°C
125
–30°C
Ta=
–0.5 –0.3mA
0.5 0.5
0 0 0
1 2 3 4 5 6 0 –1 –2 –3 –4 –5 –6 0 1 2 3

NPN PNP PNP
10000 10000 –2.5
typ
5000
5000
Typ –2.0
1000 –1.5
IC (A)
hFE
hFE
1000 Ta=125°C
500 75°C
–1.0 25°C
–30°C
500
100 –0.5
50
100 30 0
0.03 0.05 0.1 0.5 1 2.5 –0.03 –0.05 –0.1 –0.5 –1 –2.5 0 –1 –2 –3

NPN PNP
10000 10000
5000 5000
5°
C
2
=1 5°
C
Ta 7
°C
25 C °C
0° 25
=1 5°C
–3 1000 Ta 7 °C
25 C
hFE
hFE
1000 0°
–3
500
500
100
100 50
0.03 0.05 0.1 0.5 1 2.5 –0.03 –0.05 –0.1 –0.5 –1 –2.5
IC (A) IC (A)
200
SDH03
NPN PNP
hFE 2000 12000 VCE=4V, IC=1A 2000 12000 VCE=–4V, IC=–1A
VCE(sat) 1.3 V –1.4 V
VBE(sat) 2.2 V –2.2 V
NPN PNP NPN
3 –3 50
2 –2
VCE (sat) (V)
θ j–a (°C / W)
VCE (sat) (V)
10
IC=–2A
IC=2A
5
IC=–1A
IC=1A
1 –1
IC=0.5A IC=–0.5A
0 0 1
0.1 0.5 1 5 10 50 100 –0.1 –0.5 –1 –5 –10 –50 1 5 10 50 100 500 1000

NPN PNP PNP
(IC / IB=1000) (IC / IB=1000)
3 –3 50
VCE (sat) (V)
2 –2
θ j–a (°C / W)
VCE (sat) (V)
10
°C
Ta=–30 5
–30°C
1 25°C –1 75°C 25°C
Ta=125°C
125°C
75°C
0 0 1
0.2 0.5 1 2.5 –0.2 –0.5 –1 –2.5 1 5 10 50 100 500 1000

NPN PNP
5 –5 3
4
1-1 Chip Operation
10
0µ
3-3 Chip Operation

10
s
0µ
4-4 Chip Operation

s
2
1m
1m
1
s
–1 2
s
10
10
m
m
s
s
PT (W)
IC (A)
0.5
IC (A)
–0.5 1
0.1
Single Pulse
Single Pulse
0.05 Without Heatsink Ta=25°C
0.03 Ta=25°C –0.05 0

3 5 10 50 100 –3 –5 –10 –50 –100 0 50 100 150
201
SDK02 N-channel
With built-in flywheel diode External dimensions E ••• SD

Specification

IF 1.5 A Re(yfs) 1.2 S VDS=10V, ID=1.0A
IFSM 2.5 (PW≤0.5ms, Du≤10%) A 0.19 0.24 Ω VGS=10V, ID=1.0A
RDS(ON)
VR 120 V 0.25 0.30 Ω VGS=4V, ID=1.0A
PT 3 (Ta=25°C, 4-circuit operation) W Ciss 400 pF VDS=25V,
Tch 150 °C Coss 160 pF f=1.0MHz,
Tstg –40 to +150 °C Crss 35 pF VGS=0V
16 15 14 13 12 11 10 9 ●Diode for flyback voltage absorption

Specification
VR 120 V IR=10µA
1 3 5 7 VF 1.6 V IF=1A
IR 100 µA VR=120V
2 4 6 8 trr 100 ns IF=±100mA
202
SDK04 N-channel

Specification

EAS* 2.7 mJ Re(yfs) 1.5 S VDS=10V, ID=1.0A
PT 3 (Ta=25°C, 4-circuit operation) W 0.60 0.80 Ω VGS=10V, ID=1.0A
RDS(ON)
Tch 150 °C 0.75 0.95 Ω VGS=4V, ID=1.0A
* : VDD=25V, L=1mH, IL=2A, unclamped, RG=50Ω, see Fig. E on page 15. Coss 40 pF f=1.0MHz,
Crss 10 pF VGS=0V
■Equivalent circuit diagram td(on) 7 ns ID=1A, VDD 50V,
tr 20 ns RL=50Ω,
15,16 13,14 11,12 9,10
td(off) 35 ns VGS=10V,
1 3 5 7 VSD 1.0 1.5 V ISD=2A, VGS=0V
2 4 6 8
203
Sanken Electric Co., Ltd.
1-11-1 Nishi -Ikebukuro,Toshima-ku, Tokyo
PHONE: 03-3986-6164
FAX: 03-3986-8637
TELEX: 0272-2323(SANKEN J)
Overseas Sales Offices

●Asia
Sanken Electric Singapore Pte.Ltd.
150 Beach Road,#14-03 The Gateway West,
Singapore 0718
PHONE: 291-4755
FAX: 297-1744
Sanken Electric Hong Kong Co.,Ltd.

1018 Ocean Centre, Canton Road,
Kowloon, Hong Kong
PHONE: 2735-5262
FAX: 2735-5494
TELEX: 45498 (SANKEN HX)
Sanken Electric Korea Co.,Ltd.

SK Life B/D 6F,
168 Kongduk-dong, Mapo-ku, Seoul, 121-705, Korea
PHONE: 82-2-714-3700
FAX: 82-2-3272-2145
●North America
Allegro MicroSystems,Inc.
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615, U.S.A.
PHONE: (508)853-5000
FAX: (508)853-7861
●Europe
Allegro MicroSystems Europe Limited.
Balfour House, Churchfield Road,
Walton-on-Thames, Surrey KT12 2TD, U.K.
PHONE: 01932-253355
FAX: 01932-246622
PRINTED in JAPAN H1-T07EB0-0103020ND

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Bulletin No

SMA 120 108

Product index by Part Number .................................................... 2

Product index by function (Sink Driver) ......................................... 4

Product index by function (Source Driver)...................................... 6

Product index by function (Motor Driver) ....................................... 8

Product index by applications.................................................. 10

Storage, characteristic inspection, and handling precautions ........... 13

Avalanche energy capability of MOSFET array .............................. 14

Transistor array with built-in avalanche diode .............................. 16

Switching time measurement .................................................. 16

External dimensions ............................................................. 17

SLA packages ..................................................................... 18

SMA packages ................................................................... 122

STA packages .................................................................... 152

SD packages (surface mount) ................................................. 191

●With built-in flywheel diode

●3-phase motor driver

●Stepper motor driver with dual supply voltage switch

●5-phase motor driver

●Solenoid STA301A STA460C

STA302A STA322A SLA5004

●DC motor Forward-reverse STA434A STA431A

PWM control SLA4391 SLA5007

100V AC direct drive SLA5072

200V AC direct drive STA304A+STA305A

Bipolar drive STA473A STA421A STA506A

7. Handling precautions to protect power

4. Screw tightening torque

1. What is avalanche energy capability ? 3. Temperature derating for EAS

*VDD : Supply voltage

Fig. C Transient Stationary

The Darlington transistor chip with a built-in avalanche diode

Switching time measurement

1. Transistor array 2. MOS FET array

Fig. 1 PNP Fig. 3 Nch

(b) Input-output waveform

Fig. 2 NPN Fig. 4 Pch

Collector 0.9IC 10%

A SLA (12-pin) C STA (8-pin)

Weight : Approx. 2.0g

SLA (15-pin) STA (10-pin)

Weight : Approx. 2.6g

Weight : Approx. 4.0g Weight : Approx. 1.05g

Absolute maximum ratings (Ta=25°C) Electrical characteristics (Ta=25°C)

VCBO 60±10 V ICBO 10 µA VCB=50V

■Equivalent circuit diagram

R1: 3kΩ typ R2: 150Ω typ

θ j-a-PW Characteristics PT-Ta Characteristics Safe Operating Area (SOA)

Absolute maximum ratings (Ta=25°C) Electrical characteristics (Ta=25°C)

VCBO 120 V ICBO 10 µA VCB=120V

■Equivalent circuit diagram

VCE (sat) (V)

θ j-a-PW Characteristics PT-Ta Characteristics Safe Operating Area (SOA)

Absolute maximum ratings (Ta=25°C) Electrical characteristics (Ta=25°C)

6 7 R1: 3kΩ typ R2: 500Ω typ

VCE (sat) (V)

θ j-a-PW Characteristics PT-Ta Characteristics Safe Operating Area (SOA)

Absolute maximum ratings (Ta=25°C) Electrical characteristics (Ta=25°C)

θ j-a-PW Characteristics PT-Ta Characteristics Safe Operating Area (SOA)

0.5 0 0.03 Ta=25°C

Absolute maximum ratings (Ta=25°C) Electrical characteristics (Ta=25°C)

VCBO 120 V ICBO 10 µA VCB=120V