Morphological instabilities of interfaces have been intensively studied for decades. The instability of the "stressed crystal-melt system" is close to the instability of a stressed solid with respect to surface diffusion along a traction-free boundary. The presence of this instability in stressed 4He and several heteroepitaxial films is widely acknowledged and well documented.
Original Description:
Original Title
Michael Grinfeld- Two-dimensional islanding atop stressed solid helium and epitaxial films
Morphological instabilities of interfaces have been intensively studied for decades. The instability of the "stressed crystal-melt system" is close to the instability of a stressed solid with respect to surface diffusion along a traction-free boundary. The presence of this instability in stressed 4He and several heteroepitaxial films is widely acknowledged and well documented.
Morphological instabilities of interfaces have been intensively studied for decades. The instability of the "stressed crystal-melt system" is close to the instability of a stressed solid with respect to surface diffusion along a traction-free boundary. The presence of this instability in stressed 4He and several heteroepitaxial films is widely acknowledged and well documented.