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Semiconductor Physics I
Chap. 1 Introduction
1. Literature 2. semiconductor properties 3. basic parameters
Chap. 6 Statistics
1. equilibrium TD 2. Distribution functions
Chap. 7 Non-equilibrium
1. Field effect 2. Currents 3. Recombination/relaxation
Chap. 8 Transport
1. Boltzmann equation 2. Scattering mechanisms/mobility 3. ..
SC-Phys-I_Schweizer-2010
Semiconductor Physics
Semiconductor Physics II
Chap. 10 Device technology
1. Crystal growth 2. Doping technology 3. Pattern technology (lithography, etching)
Chap. 13 Optoelectronic
1. LEDs 2. Detectors / solar cells 3. Semiconductor lasers 4. Modulators
SC-Phys-I_Schweizer-2010
Semiconductor Physics I / II
SC-Phys I Wed. 15.10.2010 08.00 - 09.30 V 57.06
SC-Phys-I_Schweizer-2010
Semiconductor Physics I
Chap.2 Crystal Structure
2.1. Crystal Lattice
1. 1. 2. Crystal lattice/Bravais lattice/primitive cell/Wigner-Seitz-cell/ summary Crystal symmetry/ /Point groups Crystal planes/directions/Miller indices
(05-45)
2.2
Reciprocal Lattice .
1. 2. 3. Bragg - Laue condition Reciprocal lattice Description periodicity
(46-60)
2.3
Brillouin zone
1. Construction / examples
(61-63)
2.4 2.5
(64-81) (82-100)
SC-Phys-I_Schweizer-2010
Semiconductor Physics I
Chap.2.1 Crystal Lattice
Outline
2.1. Crystal Lattice
1. 2. 3. Crystal lattice/Bravais lattice/primitive cell/summary Crystal symmetry/ Wigner-Seitz-cell/Point groups Crystal planes/directions/Miller indices
(1.1/06-47)
(30-29) (30-39) (40-47)
SC-Phys-I_Schweizer-2010
Semiconductor Physics I
Chap.2.1.1 Crystal Lattice
SC-Phys-I_Schweizer-2010
Semiconductor Physics I
Chap.2.1.1 Crystal Lattice
SC-Phys-I_Schweizer-2010
Semiconductor Physics I
Chap.2.1.1 Crystal Lattice
Hellwege, Festkrperphysik
SC-Phys-I_Schweizer-2010
Semiconductor Physics I
Chap.2.1.1 Crystal Lattice
SC-Phys-I_Schweizer-2010
Semiconductor Physics I
Chap.2.1.1 Crystal Lattice
2.1)
2.2)
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Semiconductor Physics I
Chap.2.1.1 Crystal Lattice (primitive lattice cell)
2.3)
V
c 2.4) b a
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Semiconductor Physics I
Chap.2.1.1 Crystal Lattice (Bravais lattice)
(translation invariance)
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Semiconductor Physics I
Chap.2.1.1 Crystal Lattice (Bravais lattice, examples)
2.5)
(1,1,1)
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13
Semiconductor Physics I
Chap.2.1.1 Crystal Lattice (Bravais lattice, example bcc)
2.6a) 2.6c)
2.6b)
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Semiconductor Physics I
Chap.2.1.1 Crystal Lattice (Bravais lattice, example fcc)
fcc
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Semiconductor Physics I
Chap.2.1.1 Crystal Lattice (Bravais lattice, primitive cell)
*)conventional
b c
bcc
primitive
a
conventional
b c
fcc
primitive
*) Primitive not full symmetry of Bravais lattice Conventional cell full symmetry of Bravais lattice
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Semiconductor Physics I
Chap.2.1.1 Crystal Lattice (Wigner Seitz Cell )
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Semiconductor Physics I
Chap.2.1.1 Crystal Lattice (Bravais lattice, exp. examples)
Crystal Lattice of different elements and their Bravais lattices
Tab:2.1
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Semiconductor Physics I
Chap.2.1.1 Crystal Lattice (Bravais lattice)
Diamond lattice
*)
Tab:2.2
*)
*) with base the diamond lattice represents a fcc lattice. Environment for any fcc point differs in orientation to nearest neighbour not a Bravais lattice
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Semiconductor Physics I
Chap.2.1.1 Crystal Lattice (Bravais lattice)
Hexagonal Bravais lattice
2.9) a1 = ax; a2 = ax + (3)1/2 ay; a3 = cz
*)
*) There are 2 possibilities to pack identical spheres close: hexagonal lattice, cubic lattice
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Semiconductor Physics I
Chap.2.1.1 Crystal Lattice (Bravais lattice, exp. example)
Hexagonal Bravais lattice (experimental)
Tab:2.3
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Semiconductor Physics I
Chap.2.1.1 Crystal Lattice (Bravais lattice, general overview)
2D and 3D Bravais lattices
Tab:2.4 and 10 point groups 17 space groups
(Madelung I, p.62)
Tab:2.5
unit cells P = primitive C = non primitive base centred I = body centred F = face centred
14
22
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Semiconductor Physics I
Chap.2.1.1 Crystal Lattice (3D Bravais lattice)
*) P I
*) each cryst. system could be (P,F,I,C) 7x4=28 but only 14 BL are possible
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Semiconductor Physics I
Chap.2.1.2 Crystal Symmetry (3D Bravais lattice )
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Semiconductor Physics I
Chap.2.1.1 Crystal Lattice (Summary)
Tab. 2.6: Summary lattice structures of semiconductors
Diamond lattice all group IV elemental SC Si, Ge, -Sn nearly all III-V and II-VI compound SC: GaAs, GaP, InAs, InSb, SiC (IV/IV some III/V and II/VI compound SC CdSe, CdS II/IV/V and I/III/VI compound SC CdSnAs2, CuInSe2 all IV/VI-compound SC and some II/VI compound SC PbS, PbSe, PbTe, GeS, SnTe
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Zinkblende Lattice
Wurtzite Lattice
Chalcopyrite lattice
NaCl lattice
Semiconductor Physics I
Chap.2.1.1 Crystal Lattice (Summary)
Lattice structures of semiconductors
Tab. 2.7 Tab. 2.8 Lattice const. (AE)
5.43 5.65
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Semiconductor Physics I
Chap.2.1.1 Crystal Lattice (Summary)
Lattice structures of semiconductors
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Semiconductor Physics I
Chap.2.1.2 Crystal Symmetry (Point group symmetry)
no axis
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Semiconductor Physics I
Chap.2.1.2 Crystal Symmetry (Point group symmetry)
2.10a)
2.10b)
r r r r r r ` r = T T = n i a i
i
2.10c)
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Semiconductor Physics I
Chap.2.1.2 Crystal Symmetry (Point group symmetry)
2.11a) 2.11b)
r r r r r r ` r = T T = n i a i
i
2.11c)
2.11d)
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Semiconductor Physics I
Chap.2.1.2 Crystal Symmetry (Point group symmetry)
2.12a)
2.12b)
r r r r r r ` r = T T = n i a i
i
2.12c)
2.13)
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Semiconductor Physics I
Chap.2.1.2 Crystal Symmetry (Point group symmetry)
Tab. 2.9
32
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32
Semiconductor Physics I
Chap.2.1.2 Crystal Symmetry (Point group symmetry)
2.14)
d.
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Semiconductor Physics I
Chap.2.1.2 Crystal Symmetry (Point group symmetry)
Tab. 2.10
chemistry
crystallography
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Semiconductor Physics I
Chap.2.1.2 Crystal Symmetry (Symmetry and QM)
Symmetry operations result in group properties (p. 33) Representation of groups by group table and character table (example inversion group) Tab. 2.11a: Group table 1. element O D(e) D(i) 2. element D(e) D(e) D(e) D(i) D(i) D(e) 11 12 22 representations Tab. 2.11b: Character table classes (elements) D(e) 1 1 D(i) 1 -1
1 0 0 1 0 1 1 0
Semiconductor Physics I
Chap.2.1.2 Crystal Symmetry (Symmetry and QM)
Start with Hamiltonian which is invariant with respect to symmetry operator D(g), ( g = group element ) 2.15) H ; D ( g ) = 0
2.16) H ua
= Ea u a
The matrix elements of D from eigen vectors u give the representation matrices of group G(g) (see 35)
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Semiconductor Physics I
Chap.2.1.2 Crystal Symmetry (Symmetry and QM)
H can consist of sub spaces. Total matrix <H> represents again a representation of group G (g) with elements g (see p. 35)
Representation matrix of group G ( g ) : 2.19)
u a a ' H ( g ) ub b
0 [1 ( g )] [2 ( g )] = 0 [3 ( g )]
a = 1,2,..., t a b = 1,2,..., tb
q
i i
Nclass = number of classes (certain elements of G[g]) without proof: Nclass = N representations (Tab 2.11b)
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Semiconductor Physics I
Chap.2.1.3 Crystal planes and directions
1. 2.
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Semiconductor Physics I
Chap.2.1.3 Crystal planes and directions (Miller's indices )
(Tab. 2.12)
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Semiconductor Physics I
Chap.2.1.3 Crystal planes and directions ( )
2.22)
2.23)
2.24)
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Semiconductor Physics I
Chap.2.1.3 Crystal planes and directions (distance between crystal planes )
2.25a ) r p = p (cos ; cos ; cos ) distance E from coord . cent. equation for E : (Hesse form ); p = d = distance OE r r r 2.25b) (r p ) p = 0 x cos + y cos + z cos p = 0
z
oa
or
E(h,k,l) p-r p
x x y z y z + + + + 2.25c) =1 p cos p cos p cos na ma oa r normal vector p on E : (direction vector for plane E ) r p = p p and 2.25e)
na
r p p 1 1 1 p`= = ; ; p d p cos p cos p cos r ma with lattice constant a surface normal vector p`and Miller indices h, k , l : r 1 1 1 1 1 (m o; n o; n m ) = 1 (h; k ; l ) p`= 2.25 f ) ; ; y a n a m a o a a nmo 2.25d ) and r 1 p` = a from Eq.2.25 h 2.25h) p 1 1 1 1 1 2 h + k2 + l2 = + 2+ 2 = d d n2 m o a
2.26)
OE = d (h, k , l ) =
a h2 + k 2 + l 2
41
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Semiconductor Physics I
Chap.2.1.3 Crystal planes and directions (Miller's indices )
0.5
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Semiconductor Physics I
Chap.2.1.3 Crystal planes and directions (Miller's indices )
Tab. 2.12
z
Intercept r, p, q reciprocal 1/r, 1/p, 1/q 1/a, 0, 0 Miller h, k, l (1,0,0) (-1,0,0) (0,1,0) (0,-1,0) (0,0,1) (0,0,-1)
plane
q IV I r x VI p
II III y
I II III IV V VI
a, 0,
, ,
, 0, 0
0, 1/a, 0 0,
, a, , 0, , , a , ,0
, 0
0, 0, 1/a 0, 0, 1/
Cube surfaces :(100); (-100); (001); (00-1) are called {100} planes. {100} planes are symmetrically equivalent surfaces.
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Semiconductor Physics I
Chap.2.1.3 Crystal planes and directions (Miller's indices )
distance between planes and angles for given Miller indices : 2.27 a ) d hkl = a h2 + k 2 + l 2 hh'+ kk '+ll ' h 2 + k 2 + l 2 h '2 + k '2 +l '2
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Semiconductor Physics I
Chap.2.1.3 Crystal planes and directions (Miller's indices )
Short summary crystal planes/directions/Miller indices
Nomenclature (1,0,0) single plane {1,0,0} equivalent planes (set of planes) [1,0,0] single direction <1,0,0 > equivalent directions (set of directions)
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Semiconductor Physics I
Chap.2.2 Reciprocal Lattice
Outline
Chap. 2.2.1 Bragg/Laue condition Chap. 2.2.2 Description of periodicity Chap. 2.2.3 Reciprocal lattice
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Semiconductor Physics I
Chap.2.2.1 Bragg/Laue condition ( Bragg condition ) Measurement (characterization) of Crystal structure
Lattice constants are small lattice atom arrays can be understood as mirror for photons lattice ~ AE range probe with light
2 :=
1 2 d
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Semiconductor Physics I
Chap.2.2.1 Bragg/Laue condition ( Bragg condition )
geometrical relations : 2.27 a ) 1 = d sin ( ) 2.1c) = 2 + 1 = 2d sin ( ) 2.27b) 2 = d sin ( )
Bragg condition:
2 :=
1 2 d
2.30)
2d sin( 2) = nd
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Semiconductor Physics I
Chap.2.2.1 Bragg/Laue condition ( ) Measurement (characterization) of Crystal structure
Lattice constants are small lattice atoms can be used as slits for photons lattice ~ AE range probe with light
k=2/
0 k=2/
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Semiconductor Physics I
Chap.2.2.1 Bragg/Laue condition ( )
Measurement (characterization) of Crystal structure
geometrical relations : 2.31a ) 1 = a cos( 0 ) 2.31c) = 2 1 = a (cos( ) cos( 0 )) 2.31b) 2 = a cos( ) interference : 2.31d ) = na
Momentum conservation
k
k`
r a
ka cos ka (cos cosa) ka cos
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Semiconductor Physics I
Chap.2.2.1 Bragg/Laue condition ( Crystal structure
- momentum equation from interference condition (eq.2.31d)
(k = 2 )
r a
r c
r r r = nc c r Tp ,q ,r
3D Laue
r r p = na a
r b
r r q = nb b
r r 2.33a ) k a (cos( ) cos( 0 )) = 2 na 2.33d ) k a = 2 na r r 2.33b) k b (cos( ) cos( 0 )) = 2 nb 2.33e) k b = 2 nb r r 2.33c) k c (cos( ) cos( 0 )) = 2 nc 2.33 f ) k c = 2 nc
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Semiconductor Physics I
Chap.2.2.2 Reciprocal lattice ( ) Reciprocal lattice and Laue condition
- reformulation Laue - define Brillouin zone - Prediction E(k) (k) from scattering experiment
reciprocal base : r r r r r r 2.34a ) a * a = b * b = c * c := 2 r r r r r r 2.34b) a * b = b * c = b * c := 0 r r r 2.34c) a* = (2 Vcell ) b c ; r r r 2.34d ) b * = (2 Vcell ) c a; r r r 2.34e) c * = (2 Vcell ) a b ; r reciprocal vector G : r r r r 2.34 f ) G = na a * + nb b * + nc c *
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Semiconductor Physics I
Chap.2.2.2 Reciprocal lattice ( ) Reciprocal lattice and Laue condition
- scalar product between G and T (for T see p. 51)
2.37b)
r r k = k` ~ G G 2.37e) k = 2 2
~ 2
r r with G = G
~
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Semiconductor Physics I
Chap.2.2.2 Reciprocal lattice ( Laue scattering )
1/b 1/a
G2 2
~
r k2
G plane 2 2
G1 2
~ r r G k1 1 2
~ r r G k2 2 2
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Semiconductor Physics I
Chap.2.2.3 Description of periodicity
2.38)
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Semiconductor Physics I
Chap.2.2.3 Description of periodicity
2.39a) 2.39b)
2.39c)
2.39d) 2.39e)
2.39f)
n=p=0
2.39g)
56
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Semiconductor Physics I
Chap.2.2.3 Description of periodicity (reciprocal lattice )
2.40a)
2.40b)
2.40c)
2.41)
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Semiconductor Physics I
Chap.2.2.3 Description of periodicity (reciprocal lattice )
2.42)
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Semiconductor Physics I
Chap.2.2.3 Description of periodicity (reciprocal lattice )
2.43a)
2.43b)
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Semiconductor Physics I
Chap.2.2.3 Description of periodicity (reciprocal lattice, examples)
2.44a) 2.44b) 2.45a) 2.45b) 2.45c) 2.44c)
2.46)
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Semiconductor Physics I
Chap.2.3 Brillouin Zone
* The Brillouin zone (BZ) (Wigner-Seitz cell in reciprocal space)
- construction: - trace reciprocal lattice point O to next neighbour - draw a perpendicular line between next neighbours - Geometrical meaning: each vector k, k`from O which meets an edge of the BZ fulfils Laue condition - Laue condition (Fig. 7.7) 2.47a) k = G = 2/a (n,k,l) 2.47b) 0 = -2k`G +G2 2.47c) k`cos = G/2
Brillouin zone
r k2
*Special directions
k = [100] cross section 1. BZ k = [111] cross section 1. BZ k = [000] origin of BZ X-point L-point -point
61
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Semiconductor Physics I
Chap.2.3 Brillouin zone (reciprocal lattice, examples)
2.48)
2.49)
primitive
2.50)
primitive
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Semiconductor Physics I
Chap.2.3 Brillouin zone (Brillouin zone, specific directions)
BZ fcc
BZ bcc
BZ Hex.
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Semiconductor Physics I
Appendix 1 Diffraction Methods
2.51a)
2.51b)
2.51c) SC-Phys-I_Schweizer-2010
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Semiconductor Physics I
Appendix 1 Diffraction methods (Bragg scattering)
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Semiconductor Physics I
Appendix 1 Diffraction methods (Bragg scattering)
2.52a)
2.52b)
2.52c)
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Semiconductor Physics I
Appendix 1 Diffraction methods ( )
2.53)
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Semiconductor Physics I
Appendix 1 Diffraction methods (X-ray sources )
X-rays are created shooting fast electrons into Metal Emitted radiation consists of a broad background (Bremsstrahlung) e some characteristic intense lines Two processes take place the electrons change their direction the acceleration and / or deceleration of charges leads to emission of radiation
Ze
e*
Semiconductor Physics I
Appendix 1 Diffraction methods (X-ray sources )
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Semiconductor Physics I
Appendix 1 Diffraction methods (X-ray sources )
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Semiconductor Physics I
Appendix 1 Diffraction methods (X-ray sources )
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Semiconductor Physics I
Appendix 1 Diffraction methods (X-ray sources )
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Semiconductor Physics I
Appendix 1 Diffraction methods (Laue method )
A single crystal is placed stationary In a beam of x-rays or neutron radiation of continuous wavelength commonly 0.2 2 AE For certain directions there is a match of angle and radiation of a particular wavelength diffracts off a plane of distance d:
2.55)
2 d sin = n
Semiconductor Physics I
Appendix 1 Diffraction methods (Laue method )
cubic crystal
stereographic Projection point 111 south pole intersection points of cubic crystal surface normals with position sphere SC-Phys-I_Schweizer-2010
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Semiconductor Physics I
Appendix 1 Diffraction methods (Laue method )
The complete reflection spots of a cubic crystal with [001] direction in north-south orientation in stereographic projection Symmetry axes according multiples ( ) of rotation axes Indicated
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Semiconductor Physics I
Appendix 1 Diffraction methods (Laue method )
( h-k l )
(000)
Sl
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(hkl) 76
Semiconductor Physics I
Appendix 1 Diffraction methods (Laue method )
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Semiconductor Physics I
Appendix 1 Diffraction methods (rotating crystal )
scattering cone
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Semiconductor Physics I
Appendix 1 Diffraction methods (rotating crystal )
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Semiconductor Physics I
Appendix 1 Diffraction methods (Debye-Scherrer powder method )
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Semiconductor Physics I
Appendix 1 Diffraction methods (Debye-Scherrer powder method )
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Semiconductor Physics I
Appendix 2: Scattering amplitude (detailed discussion )
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Semiconductor Physics I
Appendix 2: Scattering amplitude (detailed discussion )
2.57a)
2.57b) 2.57c)
2.57d)
2.57e)
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Appendix 2: Scattering amplitude (Fourier description )
2.58a) 2.58b)
2.58c)
2.59a)
2.59b)
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Appendix 2: Scattering amplitude (Reciprocal lattice )
2.60a)
2.61a)
2.61b)
2.61c)
2.60b)
2.62a) 2.62b)
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Semiconductor Physics I
Appendix 2: Scattering amplitude ( Laue condition alternative derivation )
r r K a
r K
r K`
0
a (cos cos 0 ) = n a 2
or
r K
r r K a r r K `a
3D Laue :
r a
a (cos cos 0 ) = 2 n a or r r r r r K ` K a K a = 2 n a
r r K a = 2 n a r r K b = 2 n b r r K c = 2 n c
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Appendix 2: Scattering amplitude (Fourier description )
2.63)
2.64)
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Semiconductor Physics I
Appendix 2: Scattering amplitude (Ewald construction )
2.65) 2.66)
origin
G2/2
reflection plane 2 with G2/2
K`
G1/2 K
reflection plane 1 with G1/2
88
2.67)
r r K G 2 = G 2 2 and
r r K `G 1 = G 1 2 2.68)
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Appendix 2: Scattering amplitude (Ewald construction )
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Semiconductor Physics I
Appendix 2: Scattering amplitude (Ewald construction )
K sphere according orientation of crystals in powder K = reciprocal lattice vector G K Triangle in b) is isosceles
K = 2k sin 2.69) 2
Semiconductor Physics I
Appendix 2: Scattering amplitude (Geometrical form factor )
2.70)
2.71) 2.72)
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Semiconductor Physics I
Appendix 2: Scattering amplitude (Geometrical form factor )
2.73)
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Semiconductor Physics I
Appendix 2: Scattering amplitude (Geometrical form factor )
2.74)
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Semiconductor Physics I
Appendix 2: Scattering amplitude (Geometrical form factor )
even
even + odd
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Semiconductor Physics I
Appendix 2: Scattering amplitude (Geometrical form factor )
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Semiconductor Physics I
Appendix 2: Scattering amplitude (atomic form factor )
(see fj in expression for amplitude A on page92)
2.75) 2.76)
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Semiconductor Physics I
Appendix 2: Scattering amplitude (atomic form factor )
With total Scattering amplitude: A
A k = f j exp ( i ( j + mnp )k ) = exp ( i mnp k ) f j exp ( i j k )
m j mnp
IA)
Laue
with IB )
k`
r r r r for G = 2 hA + kB + lC ID )
mnp
Semiconductor Physics I
Appendix 2: Scattering amplitude (atomic form factor )
z
k`
2
IE )
(f
r r f j = f 0 dV n( ) exp i k
IG ) dV = 2 d sin( ) d d
For assumed spherical electron distribution we get n = n ( | | ) Eq. IIA and finally fj (Eq. III )
= =
IIH )
f j = f0
=0
( )
II _ I )
f j = 4 f 0 d 2 n ( )
0
sin (G ) G f 0 N el
for concentration of e approx. in atom center sin (G ) only regions 0 and 1 contribute G
IIJ )
f j = f 0 d 4 2 n ( ) =
0
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(N
el
number of electrons )
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Appendix 2: Scattering amplitude (atomic form factor )
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Semiconductor Physics I
Appendix 2: Scattering amplitude (Debye-Waller factor )
2.77)
2.78)
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