Use at your own risk

Mind

1 - BJT

1)

V BEon = V LO + (Vcc V LO )
(1 exp( t d / T )) =>
Vcc V LO
t d = T ln
Vcc V BEon

T = R B C = 8.2 *10 p t d 10.5 ns

tr
-:
Miller
C :
C(Av+1) C[(Av+1)/v]
:

g mV Rc
Vo
=
= g m Rc
Av =
VB
V
IC
V cc
I C bias =
, gm =
VT
2 Rc
V cc
Av =
= 100
2VT

r
2VT = Vcc
(1 exp( t r / T ) )
r + R B

tr
:

I BF

= ( r // R B ) ( C + C ( Av + 1))

t r 17 ns => t ON = td + tr 27.5 ns

V cc V BESA T
=
,
RB

Vcc VCESAT
IC =
RC

V LO V BE SAT
I BR =
RB
IC
I BF

tsd = s
=> tsd 466ns
Ic
+ | BR |

I BF
t f = tr
=> t f 104,3ns
| BR |
tOFF = tsd + t f 570,3ns

2) (n) p
n : tON*IBF=QON=pC
(n)
: tOFF*IBF=QOFF=48,7pC  QOFF=5V*CB 
CB RB
.
:

CB=9,74pF

fmax=1/ [2*(ton+toff)] fmax=1/ [2*ton]

3) VLO=-5V  tf

td=67.3ns,

tsd=58.11ns,

tf=7.9ns

4) Vi 0.6V.
0.6V 5V.
, .
. Cmax=(Vcc-VCESAT)/Rc= 2.22mA.
( )

IB=ICmax/=0.022mA.


Vi=VBEON+IBRB=0.783V RB
. Vi
0.6 0.783V Vo

VCESAT=0.1V.
5)

NML=VIL-VOL=0.6-0.1=> NML= 0.5V

NMH=VOH-VIH=5-0.783=> NMH=4.217V

6) L=NMH.
Ic=(5-0.1)/Rc=2.227mA

IB=(5-0.7)/RB=4.3/RB

.. :
*=c  RB=170K

RB => td => tr => tsd => tf

 (FANOUT)
2 JT Vi Vo
. Vo=5V=Vx
1 LOW 2 .
2 ( Inverter) .
Inverter .
1 HIGH, inverter
inverter LOW 2
, 2 :
Ic=(Vcc-VCESAT)/Rc, IB=Ic/=(Vx-VBESAT)/RB , Vx=Vcc-NFANOUTIBRc
Rc B inverter .
N inverter  =c => IcRc=NIBRc => (84)
Vx (0.883V).

transistor (- )
CB Vi
RB .

(a) Vi = Low, IB1=(Vcc-VBE1SAT)/RB

IC1=0
(c2b2, e2b2)
Vo=Vcc, VB2=VCE1SAT=0.1

(b) Vi=High, Q2 VB2 0.7V.

Q1 ( B-C B-E
). VB1=0.7+0.6=1.3V. Q1
. f r=Ic/Ib~0
IB1=(Vcc-VBE1ON-VBE2SAT)/RB (VBE1ON )
C1=rIB1=0, IC2=(Vcc-VCESAT)/Rc
: V1 high low VB2 low
tsd. IB1=(Vcc-VBEON)/RB, IC1=-IB2=IB1 Q1
tsd .

2 - TTL

1) Vi=Low  b1-c1 c1
( c2-b2, e2-b2). :

IB1=(Vcc-VBE1) / 4K ~ 1mA

C1=0

Q1 SAT.

VB1 = Vi+ VBE1ON = 0.2+0.7 = 0.9V VB2 = VCE2SAT + Vi = 0.2+0.2 =

0.4V. Q2
Q2 OFF. H Q2 Q3 (OFF)
0.4V -
Q2, Q3:
VBE2,3=VBE2ON+VBE3ON=1.4V. Q2, Q3 OFF :

IC2,IC3~0 => IB2,IB3~0 => IE2,IE3~0 VB3=0

H Q1 :

VB1=Vi+VBE1ON=0.9V. IB1=IE1-IC1=IE1-0=IE1=> IE1=1mA.

Q4 ( ).
VB4=Vcc. Vo
VOH  VO = VOH = Vcc VBE4ON VD = 5 0.7 0.7 = 3.6V

To transistor Q4
iL. iL Q4
. Vo
1.6K. iL
Q4 D iL Q4
Vo Vo=Vcc-(iL/(bf+1))*1.6K-VBE4VD. .
130  Vo~Vcc- iL*130-VCE4SAT-VD.

2) Vi=High, :
VB3 = VBE3SAT=0.8V
.

VB2 = VBE2SAT + VBE3SAT=1.6V ( b2-e2 ).

VB1 = VBE2 + VBE=2.3V
VE1>VC1 (3.6V>1.6V).
.

VB4 = VB3 + VCE2SAT=1V

I1 = (Vcc-VB1)/4K = 0.725mA __ IC1 = (r+1)IB1 = IB1 = 0.725mA

2 = 1 ____ C2 = (Vcc-VB2)/1.6K =2.6mA

( c=Ie)

E2 = I2 + C2 =3.3mA ____ E3 = B3 = E2 -VB3SAT/1K =2.6mA

 Vo=0.2V (?)  VBE4=VB4-Vo=0.8V :
Q1: , Q2: SAT, Q3: SAT, Q4: OFF
Fan Out: Vi=High?
: IOL=(Vcc-VBE1SAT-VCE3SAT)/4K = 1mA
Low 1mA.
Q3 ?
OLQ3=IOLMAX=IB3=2.6mA*30=78mA

= IOLMAX /L = 78  78 low o Q3.

83 80mA.
I
. fanout Q3
Low 78 .

 Fan Out: high

low, Q1 Q2, Q3
. :

4)

,
30mA. low Q3 30mA.

= IOLQ3 / C1 = 78 / 30mA = 2.6

2 high low Q3
Low. 3 90mA.
maximum 78mA Q3
low.  .

3) Vo-Vi
Vi = 0.2V  Vo = 3.6V Vi=5V
 Vo=0.1V~0.2V.

VB1=Vi+VBE1SAT=Vi+0.8 max 2.3V

VB2=Vi+VCE1SAT=Vi+0.2 max 1.6V
VB3=Vi-0.5V (0V Vi=0.5V) max 0.8V
VB4=VB3+VCE2SAT (5V Vi=0.5V) min 1V
(0<Vi<0.5) VO=VB4-VD-VBE4ON = 5-1.4=3.6 min 0.1~0.2V
(0.5<Vi<1.2) V2 (VE4=0.7V) VB4=5-1.6K*0.7/1K
=4.04V  VO=VB4-VD-VBE4ON = 2.66V
(1.2<Vi<1.4) Vi=1.4  Vo=VCE3SAT=0.1V
(Vi>1.4) Q3  Vo=VCE3SAT=0.1V

VB4 VB2=0.7 ( Vi=0.5V)

A :
VIH=1.5V, VIL=0.5V, VOH=3.6V, VOL=0.1V
NML=VIL-VOL=0.5-0.1=0.4V NM=V-V=3.6-1.5=2.1V

 tPLH ( )
Q2,Q3: OFF
Q1: SAT

ICL = IE=IC+IB

Q4 -E..  VBE4ON=0.6V, VCE4SAT=0.1V

1:

Vo+VD+VCE4SAT+IC*0.13K=5V=Vcc.

2:

Vo+VD+VBE4SAT+IB*1.6K=5V=Vcc IC=B.

 IB=0.217mA, IC=6.522mA, Vo=3.452V.

0 3.452V Vo Q4
.
0.1 3.8V Q4
3.452. (1) IC , (2)  ICL

 :
Vn=(VOH+VOL)/2=1.95V

V=(VOH-VOL)/2=1.85V

ICL=(VCC-VBE4SAT-VD-Vo)/1.6K + (VCC-VCE4SAT-VD-Vo)/0.13K
Vo=0.1V  ICL=27.7mA Vo=1.95V ICL=13.46mA

Im = (ICL(0.1) + ICL(1.95))/2 = 20.58mA

tPLH = V*C/m = 1.87*1pF / 20.58mA => tPLH~ 93.5ps/pF
tPHL ( )

r=0 Q1 .
Q3 low
high.
.. Q3
IC3=I3 .

IB2=(VCC-V1-VBE2SAT-VBE3ON)/4K
IC2=(VCC-VCE2SAT-VBE3ON)/1.6K
IE2=IB2+IC2=3.462m

3=2-(V3SAT/1)=2.862mA

IC3=B3=85.86mA  tPHL= V*C/C => tPHL= 21.55pF

: Vi=1.2V ( )
R=5-1.3/1.6K=2.313mA
IR=0.7+IB3+IB4
IC3=IB3___IC4=IB4____4=C3=> IB4(+1)/=3
(1), (2) :
IB3=0.82mA, IB4=0.79mA,
IC3=24.6mA, IC4=23.8mA

(1)
(2)

3 - NMOS FET

1) Vi=Low/Vo=High, QSOFF, QLSAT (VDS>VGS-VT)

IDS=IDL=0  IDL=0 => KL(VGS-VT)2=0 => KL (VDD V0 -VT)2=0 =>
Vo=VDD-VT=4V  VOH=4V
Vo=VOH
QL OFF SAT.

 Vi=High=4V/Vo=Low, QSLIN, QLSAT

IDS=IDL => KS(2(VGS-VT)VDS-VDS2)= KL (VGS-VT)2 =>

KS(2(VOH-VT)VOL-VOL2) = KL (VDD VOL -VT)2 = 50 =>
 KL (VDD VOL -VT)2 = 50 => KL~3.46 /V2
 KS(2(VOH-VT)VOL-VOL2) = 50 => KS ~ 43.1 /V2
KR=KS/KL => KR~ 12.45
 KL=(1/2)nCox(W/L)L=> (W/L)L ~ 1.17
KS=(1/2)nCox(W/L)S => (W/L)S ~ 0.14
2) VI=VIH, QSLIN, QLSAT
IDS=IDL => KS(2(VGS-VT)VDS-VDS2)= KL (VGS-VT)2 =>
KR(2(VI-VT)VO-VO2)= (VDD -VO -VT)2

(1)

 VI: KR(2VO+2 dVO/dVI (VI-VT)-2 dVO/dVI

VO)= - dVO/dVI (VDD -VO -VT)

dV0/dVI = -1 :
KR(4VO-2 (VI-VT))= (VDD -VO -VT) => Vi=aVO +b

(2)

(2) (1) :
KR(2(VI-VT)VO-VO2)= (VDD -VO -VT)2 =>

Vo = (V DD

12 K R + 1 1
VT )
=> Vo ~ 0.603V

6
K
R

(2) : VI ~ 2.07V  VIH~2.07V

QSOFF VI<VT

QS VI>VT

VI=VIL => VGS-VT=0 => VI-VT=0 => VIL=VT  VIL=1V

: NML=VIL-VOL~1-0.1=0.9 V
NMH=VOH-VIH~4-2.07=1.93 V

3)
QL:
Q S:

Vo-Vi
SAT
OFF: VGS-VT0  VI<VT=> VI< 1V
ON: VGS-VT>0  VI>VT=> VI> 1V
LIN SAT: VDS=VGS-VTSVo =VI-1


.
E .

(R)1/2

 Vo=Vi-1.
QSLIN, QLSAT:

IDS=IDL => KS(2(VGS-VT)VDS-VDS2)= KL (VGS-VT)2 =>

KS(2(VI-VT)VO-VO2) = KL (VDD VO -VT)2
: Vo=VI-VT
2 2 . :

KR(VO2) = (VDD VO -VT)2  Vo=0.883V, VI=1.883V

(KR ) 1/2= (VDD VO -VT) / (VO)
( Qs SAT)

4) tPLH:
QS OFF

:

VO = (VDD VT)
/ [1+ (KR ) 1/2 ]

 : Vn=(VOH+VOL)/2=(4+0.1)/2=2.05V

V=(VOH-VOL)/2=1.95V
Vo=0.1V  QL SAT
IDL(0.1)=KL(VGS-VT)2= KL(VDD-Vo-VT)2 ~ 50
Vo=Vn=2.05V  QL SAT
IDL(2.05)= KL(VGS-VT)2= KL(VDD-Vo-VT)2 ~ 12.5
m=(ID(0.1)+ID(2.05))/2 ~ 31.25
tPLH=V*C/m=1.95*0.1*10^(-12)/ 31.25 => tPLH ~ 6ns/pF
tPHL: :
Vn=(VOH+VOL)/2=2.05V
Vo=4V 

V=(VOH-VOL)/2=1.95V

QS SAT (VGS-VT=4-1=3V < VDS=Vo=4V)

QL SAT (VGS-VT=5-4-1=0)

IDS(4)=KS(VGS-VT)2 = KS(4-VT)2 = 387

IDL(4)= KL(VGS-VT)2= KL(VDD-Vo-VT)2 = 0
Vo=2.05V  QS LIN (VGS-VT=4-1=3V > VDS=Vo=2.05V)
QL I 2.05
IDS(2.05)= KS(2(VGS-VT)VDS-VDS2) ~ 353 (VDS=Vo, VGS=4V)
IDL(2.05) ~ 12.5
Im=(IDS(4) - IDL(4) + IDS(2.05) - IDL(2.05))/2 ~ 363
tPL=V*C/m= 1.95*0.1*10^(-12)/ 363 => tPL~ 0.52ns/pF

BODY EFFECT
FET 4 (GSDB) (B: Body)
S B
FET Gate. :
VTN( VSB 0) VT0( VSB=0) :

VTN = VT0 + [ (VSB+2F)1/2-(2F)1/2]

F: surface potention ~ 0.6V
: Body effect ~ 0.5(V)1/2
FET , VOL
. VOH :
Vo=VDD-VT=4V  VSB=Vo=4V  VTN=1.685V 
Vo=VDD-VTN=3.315V  VSB=Vo  VTN=1.602V 
Vo=VDD-VTN=3.398V  VSB=Vo=4V  VTN=1.612V 
Vo=VDD-VTN=3.388V 

 Vo=VDD-VTN=3.389V VTN=1.611V

BODY EFFECT

4 - Depletion FET

1) Depletion FET High VDD

VDD-VT.
Vo=High, QSOFF, QLLIN

IDS=IDL=0  IDL=0 => KL(2(VGS-VTD)VDS-VDS2)=0 =>

KL (2 (0-VTD) (VDD V0) - (VDD V0)2)=0 => 6(5 V0)- (5 V0)2)= 0 =>
 Vo=-1V // Vo=5V  VOH=5V

2) Vo=Low, QSLIN, QLSAT

IDS=IDL => KS(2(VGS-VTE)VDS-VDS2)= KL (VGS-VTD)2 =>
KS(2(VOH-VTE)VOL-VOL2) = KL (0-VTD)2 = 50 =>
 KL VTD2 = 50 => KL=50/9V2=5.56 /V2
 KS(2(VOH-VTE)VOL-VOL2) = 50 => KS = 63.29 /V2
KR=KS/KL => KR= 11.38
 KL=(1/2)nCox(W/L)L=> (W/L)L = 0.556
KS=(1/2)nCox(W/L)S => (W/L)S = 6.329

3) VI=VIL, QSSAT, QLLIN

IDS=IDL => KL(2(VGS-VTD)VDS-VDS2)= KS (VGS-VTE)2) =>
KL(2(0-VTD)(VDD V0) - (VDD V0)2)= KS (VI-VTE)2)

(1)

 VI: KL(2(-VTD) ( dV0/dVI) - ( 2dV0/dVI)

(VDD V0))= 2KS (VI-VTE))

dV0/dVI = -1 :
KL(2(-VTD) 2(VDD V0))= 2KS (VI-VTE))=>
-VTD (VDD V0)= KR (VI-VTE))=> Vo=11.38VI -9.38

(2)

(2) (1) :
KL(2(-VTD)(VDD V0) - (VDD V0)2)= KS (VI-VTE)2) =>
140.88VI2-281.77VI+131.88=0  VI=0.747
VGS >VTE=> VI >1 VI=1.253  VIL=1.253V
VI=VIH, QSLIN, QLSAT

IDS=IDL => KS(2(VGS-VTE)VDS-VDS2)= KL (VGS-VTD)2) =>

KS(2(VI-VTE)VO-VO2) = KL (-VTD)2)

(3)

 VI: KS(2VO+ 2(VI-VTE)dVO/dVI -2VO

dVO/dVI ) = 0
dV0/dVI = -1 :
KS(2VO- 2(VI-VTE) +2VO) = 0 => VI =2VO+1

(4)

(4) (3) :
KR(2(2VO+1 -VTE)VO-VO2) = (-VTD)2) => VO=0.513V  VIH=2.027V
: NML=VIL-VOL=1.253-0.1=1.153 V
NMH=VOH-VIH=5-2.027=2.973 V
4) tPLH:
QS OFF

:

 : Vn=(VOH+VOL)/2=2.55V

V=(VOH-VOL)/2=2.45V
VDS=VGS-VTD => VDD-Vo=0-VTD => Vo = 2V (
QL LIN(>) SAT(<))
Vo=0.1V  Vo<2V QL SAT
ID(0.1)=KL(VGS-VTD)2=50
Vo=Vn=2.55V  Vo>2V QL LIN
ID(2.55)= KL(2(0-VTD)(VDD Vn) - (VDD Vn)2)= 48.372
m=(ID(0.1)+ID(2.55))/2=49.186
tPLH=V*C/m=2.45*0.1*10^(-12)/49.186 => tPLH=4.98ns
tPHL: :
Vn=(VOH+VOL)/2=2.55V

V=(VOH-VOL)/2=2.45V

Vo=5V 

QS SAT (VGS-VTE=VI-1=4V < VDS=Vo=5V)

QL LIN (VGS-VTD=3 > VDS=VDD-Vo=0V)
IDS(5)=KS(VGS-VTE)2 = KS(5-VTE)2 = 1012.64
IDL(5)= KL(2(VGS-VTD)VDS-VDS2) = 0 (VDS=VDD-Vo=0)
Vo=2.55V  QS LIN (VGS-VTE=VI-1=4V > VDS=Vo=2.55V)
QL I 2.55
IDS(2.55)= KS(2(VGS-VTE)VDS-VDS2) = 879.6 (VDS=Vo, VGS=5V)
IDL(2.55)= 48.372
Im=(IDS(5) - IDL(5) + IDS(2.55) - IDL(2.55))/2 = 921.93
tPL=V*C/m= 2.45*0.1*10^(-12)/ 921.93 => tPL= 0.266ns

QL:

Q S:

Vo-Vi
OFF: VGS-VTD0  VGS<VTD ( VGS=0)
SAT: VDSVGS-VTDVo VDD+VTD=2V
LIN: VDS VGS-VTDVo VDD+VTD=2V
OFF: VGS-VTD0  VI<VTS=> VI< 1V
LIN SAT: VDS=VGS-VTSVo =VI-1

 FET SAT.
. Vo
.
.
SAT
.
FET
SAT.

DL=IDS => KL(VGS-VTD)2=KS(VGS-VTE)2 => KL(0-VTD)2=KS(VI-VTE)2 =>

VI = -0.249V // +2.249V
Vo= VI 1 => Vo=1.249V
(VI ,Vo) = (+2.249V, 1.249V)
KL(0-VTD)2=KS(VI-VTE)2 => KR= (VTD)2/(VI-VTE)2
KR
: Vo =VDD+VTD=2
Vo=VI-VT  VI= VDD+VTD + VT = 3V
KR= (VTD)2/(VDD+VTD)2 = 9/4

5 - CMOS
Body
Effect
depletion FET
P FET !!!

Vo.
Vi=Low/Vo=High, QPLIN, QNOFF ( C)

ID=0 => KP(2(VGS-VT)VDS-VDS2=0 => KP(2(VDD-Vi-VT)(VDD VO)(VDD VO)2=0 => VDD VO=0 => VOH =VDD
Qp
Vo=VOH . .

 Vi=High=4V/Vo=Low,QPOFF, QnLIN ( C)
Qn VOL= 0.
!
CMOS inverter.
1) Kp=Kn Vi=2.5V, QPSAT, QSAT

(KR=K/KP=1)

IDP=IDN => KP (VGS-VT)2 = KN (VGS-VT)2 = Imax ~ 156.25

KP (VDD Vi -VT)2 = Imax => KP~ Kp=Kn
 KP=(1/2)PCox(W/L)P=> (W/L)P ~ 2.67
 KN= KP =(1/2)nCox(W/L)N => (W/L)N ~ 2
2) VI=VIL, QpLIN, QSAT
IDP=IDN => KP(2(VGS-VT)VDS-VDS2)= KN (VGS-VT)2 =>
2(VDD -Vi -VT)(VDD -VO)-(VDD - VO)2= KR (Vi -VT)2
( KR=1)

(1)

 Vi: -2(VDD -VO) - 2 dVO/dVi (VDD -Vi -VT)

+2 dVO/dVi (VDD - VO) = 2(Vi -VT)

dVO/dVi = -1 :
-(VDD -VO) + (VDD -Vi -VT)- (VDD - VO) = (Vi -VT) =>
=> Vi=VO -VDD /2

(2)

(2) (1) :

Vo ~ 4.625V => Vi =VIL ~ 2.875V

VI=VIH, QpSAT, QnLIN

IDP=IDN => KP (VGS-VT)2 = KN(2(VGS-VT)VDS-VDS2) =>

(VDD -Vi -VT)2 = 2KR (Vi -VT)VO-VO2

(3)

( KR=1)

Vi: -2(VDD -Vi -VT) = 2 dVO/dVi (Vi -VT) + 2VO -

2dVO/dVi VO
dVO/dVi = -1 : - (VDD -Vi -VT) = - (Vi -VT) + VO +VO =>

=> Vi=VO +VDD / 2

(4)

(4) (3) :

Vo ~ 0.375V => Vi =VIH ~ 2.825V

: NML=VIL-VOL~2.125-0=2.125 V
NMH=VOH-VIH~5-2.125=2.125 V
: NML=NMH. 2.5V

4) tPL:
:

Vn=(VOH+VOL)/2=2.5V
V=(VOH-VOL)/2=2.5V

Vo=5V  QP OFF (VI>4V)

QN SAT (VGS -VT =5-1=4 < VDS=Vo=5V)
IDN(5) = KS(VGS-VT)2 = KS(5-VT)2 = 800
Vo=2.5V 

QP OFF (VI>4V)
QN LIN (VGS -VT =5-1=4 > VDS=Vo=2.5V)

IDN(2.5) = KS(2(VGS-VT)VDS-VDS2) ~ 687.5 (VDS=Vo, VGS=5V)

Im = (IDN(5) + IDN(2.5))/2 ~ 743.75
tPL = V*C/m = 2.5*0.1*10^(-12)/ 743.75 *10^(-6) => tPL~ 0.336ns
O CMOS
.
, .
t=0 Vi VDD Qp
.
tPLH = tPL~ 0.336ns/pF

4)
QP:

Vo-Vi
OFF: VGS-VT 0  VDD - VI < VT=> VI > 4V
ON: VGS-VT > 0  VDD - VI >VT=> VI < 4V
LIN SAT: VDS=VGS-VTSVo =VI+1

QN:

OFF: VGS-VT 0  VI < VT=> VI < 1V

ON: VGS-VT > 0  VI > VT=> VI > 1V
LIN SAT: VDS=VGS-VTSVo =VI-1

 Vo =VI+1 Vo =VI-1
FET SAT. .
Vo
.
. FET
SAT:

DP = IDN => KN(VGS - VT)2 = KP(VGS - VT)2 =>

KR(Vi -VT)2 =(VDD - Vi - VT)2 =>
Vi = (VDD +VT [(KR )1/2 - 1]) / [(KR )1/2 +1] =>
Vi = VDD / 2 = 2.5

(KR=1)

SAT Vi= VDD / 2 =2.5V

Vo
( Vi=2.5V):
VO1  VDS = VGS VT => VDD Vo = VDD Vi VT =>VO1 = 2.5V
VO2  VDS = VGS VT => Vo = Vi VT =>VO1 = 1.5V


Vo=0 Q=0. Vo=5V
Q=COVDD. H ECYCLE=QVDD=COVDD2
P= ECYCLE f = COVDD2 f ( f)
 Co
 VDD
.

 Pseudo NMOS
Vi=Low/Vo=High, QPLIN, QNOFF

ID=0 => KP(2(VGS-VT)VDS-VDS2=0 =>

KP(2(VDD-VT)(VDD VO)- (VDD VO)2=0 =>
VDD VO=0 => VOH =VDD ( VOL ~ 0.2V)
VGS-VT=VDS => VDD-VT = VDD VO => VO = VT
( Qp SAT/LIN)
Qp OFF :

To Qp Qn
inverter. O inverter
FET SAT.
SAT :

IDP=IDN => KP (VGS-VT)2 = KN (VGS-VT)2 =>

(VDD-VT)2 = KR (Vi-VT)2 => Vi = (VDD-VT) / (KR )1/2 + VT
SAT 1V<Vi<2V.
KR=10.26 Vi=2.249V
SAT .
VI=VIH =VDD ??, QpSAT, QNLIN

IDP=IDN => KP (VGS- |VTP|)2 = KN(2(VGS-VT)VDS-VDS2) =>

(VDD - |VTP|)2 = 2KR (VDD -VT)VO-VO2 =>
VO = VOL = (VDD -VT)(1 [(KR- 1)/KR]1/2)
IDMAX=Kp(VDD-VT)2

 VI=VIL, QpLIN, QSAT

IDP=IDN => KP(2(VGS- |VTP|)VDS-VDS2)= KN (VGS-VT)2 =>

2(VDD - |VTP|)(VDD -VO)-(VDD - VO)2= KR (Vi -VT)2 =>

(1)

(. Vi)
-2 dVO/dVi (VDD- |VTP|)+2 dVO/dVi (VDD - VO) = 2KR(Vi -VT) =>
dVO/dVi = KR(Vi -VT) / (VT - VO) =>
dVO/dVi = 0 Vi =VT dVO/dVi = V =VT
dVO/dVi =-1 : 2(VDD- |VTP|)-2(VDD - VO) = 2KR(Vi -VT) =>
(VDD-VT)- (VDD - VO) = KR(Vi -VT) => Vi= VT +(VO -|VTP|) / KR (2)
(2) (1):
2 Vo (2)  VIL

 VI=VIH , QpSAT, QNLIN

IDP=IDN => KP (VGS- |VTP|)2 = KN(2(VGS-VT)VDS-VDS2) =>

(VDD - |VTP|)2 = KR [2(VI -VT)VO-VO2]

(3)

Vi:
0 = KR [VO+(VDD -VT)dVO/dVI VOdVO/dVI]
dVO/dVi =-1 : 0 = VO - (VDD -VT) + VO => VI = 2VO+VT
(3) 2 Vo
VI=VIH
:

NML=VIL-VOL

NMH=VOH-VIH

6 - Flip Flops & Counters

Qm: J, K
.
Qm: Qm
Qe: J, K

J
0

K Q n +1
0 Qn

Qn

Qn

Q n +1
Qn

2) JK-MS-FF
nes catching:

JK-MS-FF
edge-triggered :

J
0

K Qn +1 Qn +1
0 Qn
Qn
1 0
1

1 Qn

Qn

Ones Catching: (1 )
CLK=1,
Qm. CLK 1,
J, K Qm.
Master CLK=1
.

3) Edge Triggered-FF

Clk. : J=K=1,Q=1

 : J=K=1,Q=1

: J=K=1,Q=0

4) Modulo 7 (
0 6)
6
.
Q Q Q
2

() 1

6 1

AND

7 1

() 1

0 0

OR

7 1

0 0

1 0

1
1!!!

5) Modulo 7 (
0 6)
6
.



110111000.

tA=10ns
tB=10ns
tC=10ns
tD=10ns
tE=10ns
tE =setup hold time,
Q


CLK.

t= tA + tB + tC + tD + tE =50ns
fmax = 1/t = 1/50ns

S
0
0

R Qn +1 Qn +1
0 1
1
. .
1 0
1

1
1

0 1
1 Qn

S
0
0
1
1

R Qn +1 Qn +1
0 Qn
Qn
1 0
1
0 1
0
. .
1 0
0

0
Qn

S
0
0

R Qn +1 Qn +1
0 Qn
Qn
1 0
1

1
1

0 1
1 ?

J K Qn+1 Qn+1
0 0 Qn Qn
0 1 0
1 0 1

1 1 Qn

Qn

CLK


(1,1) .

  1010
(10) FF. M
0 9.

!
 1001 (9)
FF .
M 0 9.
9
1010 (10)

( 1 Q0, Q3)
1011 (11)
1100
(12) .
(12) ()
 0110 (6) !!
YA (11)
(12)!!!!!!
11,12,13,14,15.

Extra: Schottky

Vi=High:

Q1  Schottky VDS
Q2, Q3

Vo=VCE3SAT=0.3V, VB3=VBEON=0.8V, VB2=VB3+VBEON=1.6V,

VB1=VB2+VDS=2.1V, VB5=VB3+VCESAT=1.1V,
VB4=VB5-VBEON=0.3V ( Q5 ) Q4 .

IB1=(5-VB1)/2.8K=1.036mA, IB2=IB1,
IC2=(5-VB5)/0.9=4.33mA, IE2=IB2+IC2=5.369mA,
, ( TTL). Vi ,
TTL Vi=High. VB3=0.8V Q6. H
0.5K 
 x30   VCE=0.3V
IC6=(VB3-VCESAT)/0.25=(0.8-0.3)/0.25=2mA, IB3=IE2-IC6=3.369mA
TTLS   
(x2) (x1/10)
IC6=(VB3-VCESATVBE)/0.25
Q6
VB5>0.7V.
TTL (4
).

Q6 ().

Vi=Low=0.3V:

Q1 , Q3 Q6

VB2=VLOW+VCESAT=0.6V, VB1=VLOW+VBEON=1.1V
VB4=(5-VBEON)*31*3.5K /(0.9K+31*3.5K)= 4.166V
IB1=(5-VB1)/2.8=1.393mA
Vo=VB4-0.7V=3.467V
:

Q3 VB3=0.7V.
Q2
VB2=1.4V.
Vo.

IB=C, VCEVCESAT

IB=0, IC=0, VBE VBEON, VBC VBEON

IB>C

: IC<0, IE<0, r ~ 0 1

tPHL ( )
V=(VOH-VOL)/2=1.583V

C = IB = 101.1mA
tPHL = V*C/IC = 15.37ps/pF

IB3=4mA, VOH=3.6V

 tPLH ( )
V=(VOH-VOL)/2=1.583V
Vm=(VOH+VOL)/2=1.883V

Io= (5-1.1-Vo)/0.05K + (5-1.6-Vo)/0.9 (0.8+Vo)/3.5

Vo=0.3V  Io = 75.45mA
Vo=1.883V  Io = 54.27mA
Im = [Io(0.3V)+Io(1.883V)]/2 = 65mA
tPHL = V*C/Im = 26.2ps/pF