A2-001-A: MOSFET Characterizations PRELIMINARY ASSIGNMENT Mos Transistor structure: 1.

What are the advantages of CMOS over its Bipolar counterpart? -CMOS consume lesser energy to operate than Bipolar -CMOS transistor does not conduct current between gate/base and the drain/emitter because it been isolated by dielectric, thus not consuming power in steady state -Both source and drain can be interchangeable compare with collector and emitter in Bipolar, -CMOS has high noise margin than Bipolar 2.

Operational Characteristic 1.Draw and explain the three main MOS operating regions.

There are 3 main operating region in MOS which is Linear, Saturation and Cutoff region. Linear: Linear region is when VDS < ( VGS Vth). The transistor is turned on, and a channel has been created which allows current to flow between the drain and the source Cutoff: Cutoff region, is when VGS< Vth. The transistor is turned off, and there is no conduction between drain and source Saturation: Saturation region, region for the transistor turn on. When VDS> ( VGS Vth). Also called active region where the gate is open. 2. Using the cross section structure above, explain the operation of the transistor a. No voltage at gate -When the voltage is low or zero at gate, P-type body (p- diffusion region is at low voltage), source region and drain region (n-diffusion) are off, thus no current flowing across transistor. b. Positive voltage applied at the gate. -Positive charge will be on gate of Mos capacitor (between polysilicon and substrate ), this attract the negative charge to substrate . This will inverts a channel under gate to N+, current can flow through n-type region (Source) through channel to drain. Transistor is ON. c. Small Drain to Source voltage, VDS applied. -applying a voltage between drain and source with zero VGS will result in almost zero current, since the p-n junction between n-doped drain and the p-doped substrate is reverse biased. d. VDS is increased. -increasing VDS will only increasing the width of the depletion region around the drain

Secondary Effect

1. Explain the following secondary effects: a. Substrate bias effect Substrate bias effect or Body effect is a relationship between threshold voltage,Vt with Vbs where Vbs is the substrate bias voltage (normally positive for n-channel devices with the body tied to ground)

b. Channel length modulation Channel length modulation is the shrotening of length of the inverted channel region by increasing in drain bias it resulting in increasing in drain current and lowering in output resistance (drain-source resistance). 2. What is the relationship between the drain-to-source resistance rds and the channel length modulation lambda, ?

From the above formulation (Shichman-Hodges), where ro is the drain-to-source resistance/output resistance, and lambda is the channel length modulation. The drain-tosource resistance is directly proptional with 1 over channel length, increasing in channel length reducing in resistancy.