NTMFS4119N Power MOSFET

Features

30 V, 30 A, Single NChannel, SO8 Flat Lead

Low RDS(on) Fast Switching Times Low Inductance SO8 Package These are PbFree Devices
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V(BR)DSS 30 V RDS(on) Typ 2.3 mW @ 10 V 3.1 mW @ 4.5 V D ID Max (Note 1) 30 A

Applications

Notebooks, Graphics Cards Low Side Switch DCDC

MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Parameter DraintoSource Voltage GatetoSource Voltage Continuous Drain Current (Note 1) Steady State t v10 s Power Dissipation (Note 1) Steady State t v10 s Continuous Drain Current (Note 2) Power Dissipation (Note 2) Pulsed Drain Current Steady State TA = 25C TA = 85C TA = 25C PD IDM TJ, Tstg IS EAS ID TA = 25C TA = 85C TA = 25C PD TA = 25C 6.1 11 8.0 0.9 89 55 to 150 8.0 421 W A C A mJ A Symbol VDSS VGS ID Value 30 $20 18 13 30 2.3 W Unit V V A

MARKING DIAGRAM
D
1

SO8 FLAT LEAD CASE 488AA STYLE 1 4119N A Y WW ZZ

S S S G

4119N AYWZZ D

tp = 10 ms

Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse DraintoSource Avalanche Energy (VDD = 30 V, VGS = 10 V, IPK = 29 A, L = 1 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8 from case for 10 s)

= Specific Device Code = Assembly Location = Year = Work Week = Lot Traceability

TL

260

ORDERING INFORMATION
Device Package SO8 FL (PbFree) SO8 FL (PbFree) Shipping 1500 / Tape & Reel 5000 / Tape & Reel

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter JunctiontoCase Steady State JunctiontoAmbient Steady State (Note 1) JunctiontoAmbient t v10 s (Note 1) JunctiontoAmbient Steady State (Note 2) Symbol RqJC RqJA RqJA RqJA Value 1.3 53.7 20.5 138.5 Unit C/W

NTMFS4119NT1G NTMFS4119NT3G

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 2. Surface mounted on FR4 board using the minimum recommended pad size (Cu area = 0.412 in sq).

For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.

Semiconductor Components Industries, LLC, 2012

May, 2012 Rev. 6

Publication Order Number: NTMFS4119N/D

NTMFS4119N
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage DraintoSource Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current GatetoSource Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient DraintoSource On Resistance Forward Transconductance VGS(TH) VGS(TH)/TJ RDS(on) gFS CISS COSS CRSS QG(TOT) QG(TH) QGS QGD RG td(ON) tr td(OFF) tf VSD tRR ta tb QRR VGS = 0 V, dIS/dt = 100 A/ms, IS = 8.0 A TJ = 25C TJ = 125C VGS = 4.5 V, VDS = 15 V, ID = 1.0 A, RG = 3.0 W VGS = 4.5 V, VDS = 15 V, ID = 18 A VGS = 0 V, f = 1.0 MHz, VDS = 24 V VGS = 10 V, ID = 29 A VGS = 4.5 V, ID = 25 A VDS = 15 V, ID = 10 A CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge GatetoSource Charge GatetoDrain Charge Gate Resistance 4800 800 530 36.8 7.3 11 17.4 0.73 W ns 60 nC pF VGS = VDS, ID = 250 mA 1.0 7.0 2.3 3.1 23 3.5 4.8 S 2.5 V mV/C mW V(BR)DSS V(BR)DSS/TJ IDSS IGSS TJ = 25C TJ = 125C VGS = 0 V, ID = 250 mA 30 19 1.0 10 100 nA V mV/C mA Symbol Test Condition Min Typ Max Unit

VGS = 0 V, VDS = 24 V

VDS = 0 V, VGS = 20 V

SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge VGS = 0 V, IS = 8.0 A 0.74 0.56 36.5 19.3 19.8 37 nC ns 1.0 V 28 26 35 40

3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures.

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NTMFS4119N
TYPICAL PERFORMANCE CURVES
70 ID, DRAIN CURRENT (AMPS) 60 50 40 30 20 10 0 0 1 2 3 4 5 6 7 8 3.0 V 2.8 V 2.6 V 9 10 3.2 V VGS = 3.8 V to 10 V 3.6 V TJ = 25C 3.4 V ID, DRAIN CURRENT (AMPS) 70 60 50 40 30 20 10 0 1 TJ = 125C TJ = 25C TJ = 55C 2 3 4 VGS, GATETOSOURCE VOLTAGE (VOLTS) 5 VDS 10 V

VDS, DRAINTOSOURCE VOLTAGE (VOLTS)

Figure 1. OnRegion Characteristics

RDS(on), DRAINTOSOURCE RESISTANCE (W) RDS(on), DRAINTOSOURCE RESISTANCE (W) 0.007 ID = 10 A TJ = 25C 0.004

Figure 2. Transfer Characteristics

TJ = 25C 0.0035 0.003 0.0025 0.002 0.0015 10 VGS = 10 V

0.006 0.005

VGS = 4.5 V

0.004 0.003 0.002

0.001

10

20

30

40

50

60

70

VGS, GATETOSOURCE VOLTAGE (VOLTS)

ID, DRAIN CURRENT (AMPS)

Figure 3. OnResistance vs. GatetoSource Voltage

2 RDS(on), DRAINTOSOURCE RESISTANCE (NORMALIZED) 1.75 1.5 1.25 1 0.75 0.5 50 ID = 29 A VGS = 10 V 100000 10000 IDSS, LEAKAGE (nA)

Figure 4. OnResistance vs. Drain Current and Gate Voltage

VGS = 0 V

TJ = 150C 1000 100 10 1

TJ = 100C

25

25

50

75

100

125

150

12

15

18

21

24

27

30

TJ, JUNCTION TEMPERATURE (C)

VDS, DRAINTOSOURCE VOLTAGE (VOLTS)

Figure 5. OnResistance Variation with Temperature

Figure 6. DraintoSource Leakage Current vs. Voltage

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NTMFS4119N
TYPICAL PERFORMANCE CURVES
VGS = 0 V TJ = 25C VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 7000 6300 C, CAPACITANCE (pF) 5600 4900 4200 3500 2800 2100 1400 700 Coss Ciss 5 QT 4 3 2 1 VDS QGS QGD VGS 12 8 4 0 40 16 20 VDS , DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Crss 0 0 15 20 30 25 0 5 10 0 GATETOSOURCE OR DRAINTOSOURCE VOLTAGE (VOLTS)

ID = 18 A TJ = 25C 5 20 25 10 15 30 QG, TOTAL GATE CHARGE (nC) 35

Figure 7. Capacitance Variation

Figure 8. GateToSource and DrainToSource Voltage vs. Total Charge

1000 IS, SOURCE CURRENT (AMPS) VDD = 15 V ID = 1 A VGS = 4.5 V t, TIME (ns)

8 VGS = 0 V TJ = 25C 6

100 tf td(off) td(on) 10 tr 10 RG, GATE RESISTANCE (OHMS) 100

0 0.4

0.6 0.8 0.5 0.7 VSD, SOURCETODRAIN VOLTAGE (VOLTS)

0.9

Figure 9. Resistive Switching Time Variation vs. Gate Resistance

Figure 10. Diode Forward Voltage vs. Current

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NTMFS4119N
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P (SO8FL) CASE 488AA ISSUE G
0.20 C D 2 D1 A B
2X

2X

NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q MILLIMETERS MIN NOM MAX 1.10 0.90 1.00 0.00 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.15 BSC 4.50 4.90 5.10 3.50 4.22 6.15 BSC 5.50 5.80 6.10 3.45 4.30 1.27 BSC 0.51 0.61 0.71 1.20 1.35 1.50 0.51 0.61 0.71 0.05 0.17 0.20 3.00 3.40 3.80 0_ 12 _

0.20 C E1 2 E c
4X

A1

TOP VIEW
3X

C
SEATING PLANE

0.10 C A 0.10 C SIDE VIEW

8X

DETAIL A

DETAIL A

SOLDERING FOOTPRINT*
1.270
3X

b e/2
1 4

0.750

4X

STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 4X

0.10 0.05

C A B c L

1.000

K 1.330
PIN 5 (EXPOSED PAD)

0.965 0.905
2X 2X

E2 L1

0.495 3.200 0.475

2X

4.530

D2 BOTTOM VIEW 1.530 4.560 *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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NTMFS4119N/D