DATA SHEET

SILICON TRANSISTOR

2SC3357
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

DESCRIPTION
The 2SC3357 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has large dynamic range and good current characteristic.
4.50.1

PACKAGE DIMENSIONS
(Unit: mm)

FEATURES
Low Noise and High Gain IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz Large PT in Small Package PT : 2 W with 16 cm2 0.7 mm Ceramic Substrate. NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V,
0.8 MIN. E
0.42 0.06

1.60.2

1.50.1

0.420.06 1.5 0.47 0.06 3.0 0.41 +0.05

0.03

ABSOLUTE MAXIMUM RATINGS (TA = 25 C)

Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Thermal Resistance Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT * Rth(j-a)* Tj Tstg 20 12 3.0 100 1.2 62.5 150 65 to +150 V V V mA W C/W C C

Term, Connection E : Emitter C : Collector (Fin) B : Base (SOT-89)

* mounted on 16 cm2 0.7 mm Ceramic Substrate

Document No. P10357EJ4V1DS00 (4th edition) Date Published March 1997 N Printed in Japan

4.00.25

2.50.1

1985

2SC3357
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Feed-Back Capacitance Insertion Power Gain Noise Figure Noise Figure SYMBOL ICBO IEBO hFE* fT Cre** S21e NF NF
2

MIN.

TYP.

MAX. 1.0 1.0

UNIT

TEST CONDITIONS VCB = 10 V, IE = 0 VEB = 1.0 V, IC = 0 VCE = 10 V, IC = 20 mA

A A

50

120 6.5 0.65 9 1.1 1.8

300 GHz 1.0 pF dB dB 3.0 dB

VCE = 10 V, IC = 20 mA VCB = 10 V, IE = 0, f = 1.0 MHz VCE = 10 V, IC = 20 mA, f = 1.0 GHz VCE = 10 V, IC = 7 mA, f = 1.0 GHz VCE = 10 V, IC = 40 mA, f = 1.0 GHz

Pulse Measurement PW 350 s, Duty Cycle 2 %

** The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitnace bridge. hFE Classification
Class Marking hFE RH RH 50 to 100 RF RF 80 to 160 RE RE 125 to 250

TYPICAL CHARACTERISTICS (TA = 25 C)

TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 2
PT-Total Power Dissipation-W

FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE f = 1.0 MHz

2.0

Cre-Feed-back Capacitance-pF

Ceramic Substrate 16 cm2 0.7 mm 1.0

Free Air

0.5

Rth(j-a) 312.5 C/W

50

100

150

0.3 0

0.5

10

20

30

TA-Ambient Temperature-C

VCB-Collector to Base Voltage-V

2SC3357
DC CURRENT GAIN vs. COLLECTOR CURRENT 200 VCE = 10 V 15 INSERTION GAIN vs. COLLECTOR CURRENT VCE = 10 V f = 1.0 GHz

|S21e|2-Insertion Gain-dB

hFE-DC Current Gain

100

10

50

20

10 0.5

10

50

0 0.5

10

50 70

IC-Collector Current-mA GAIN BANDWIDTH PROUDCT vs. COLLECTOR CURRENT 10

IC-Collector Current-mA INSERTION GAIN, MAXIMUM GAIN vs. FREQUENCY Gmax

fT-Gain Bandwidth Product-MHz

5.0 3.0 2.0 1.0 0.5 0.3 0.2 VCE = 10 V 0.1 0 0.5 10 5.0 10 30 IC-Collector Current-mA NOISE FIGURE vs. COLLECTOR CURRENT 7 6 VCE = 10 V f = 1.0 GHz Gmax-Maximum Gain-dB |S21e|2-Insertion Gain-dB

20 |S21e|2

10

VCE = 10 V IC = 20 mA 0 0.1 0.2 0.4 0.6 0.8 1.0 f-Frequency-GHz INTERMODULATION DISTORTION vs. COLLECTOR CURRENT

80 NF-Noise Figure-dB 5 4 3 2 IM2, IM3 (dB) 70 IM3

60 IM2 50

0 0.5

10

50 70

IC-Collector Current-mA

40

VCE = 10 V at V0 = 100 dB V/50 Rg = Re = 50 IM2 f = 90 + 100 MHz IM3 f = 2 200 190 MHz 20 30 40 50 60 70 IC-Collector Current-mA

30

2SC3357
S-PARAMETER
VCE = 10 V, IC = 40 mA, ZO = 50
f (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 0.196 0.103 0.056 0.024 0.008 0.039 0.072 0.102 0.129 0.151 S11 94.4 118.3 131.1 43.7 2.0 13.1 11.8 9.6 8.6 9.8 S21 13.023 6.852 4.632 3.527 2.854 2.421 2.118 1.887 1.681 1.579 S21 102.4 89.2 78.3 75.9 68.7 65.7 59.0 57.1 52.5 51.4 S12 0.043 0.081 0.118 0.152 0.188 0.218 0.255 0.278 0.308 0.339 S12 74.5 77.4 77.5 78.0 78.4 75.7 71.7 73.1 71.3 71.8 S22 0.444 0.398 0.399 0.414 0.440 0.461 0.479 0.499 0.515 0.537 S22 21.1 25.3 26.9 28.9 33.5 33.3 36.3 35.5 38.8 35.9

VCE = 10 V, IC = 20 mA, ZO = 50
f (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 0.130 0.073 0.037 0.010 0.024 0.056 0.093 0.124 0.151 0.174 S11 109.2 134.1 146.6 177.1 23.7 17.2 13.8 12.0 11.0 13.4 S21 13.430 6.930 4.690 3.560 2.878 2.439 2.133 1.898 1.693 1.591 S21 98.1 87.2 79.4 75.2 68.2 65.4 59.0 57.3 52.9 52.0 S12 0.042 0.081 0.119 0.154 0.191 0.220 0.257 0.280 0.311 0.341 S12 79.0 80.6 79.4 79.7 76.5 76.8 72.9 74.0 72.4 72.8 S22 0.403 0.382 0.392 0.412 0.440 0.463 0.483 0.504 0.519 0.542 S22 22.1 24.7 25.6 27.1 31.9 32.3 35.7 35.3 38.4 36.3

2SC3357

S11e, S22e-FREQUENCY CONDITION VCE = 10 V

8 0.0 2 0.4 20 1

0.9

1.0

0.8

1.2

9 0.0 1 0.4

0.10 0.40 110

0.7

0.11 0.39 100

0.12 0.38

0.13 0.37

90

0.14 0.36 80

0.15 0.35

70
1.4

0.1 6 0.3 4

THS 0 0.01 0.49 0.02 TOWARD 0.48 0 0.49 0.0 GENE 0.01 7 0.48 3 RA 0.4 0.02 RD LOADLECTION COEF WA F FCIENT 0.4 0.0TOR 6 IN DE 7 .03THS TO GLE OF RE 0 G 4 GRE AN 0.4 0.4 ES LEN160 0 4 E 6 0 .0 0.0 AV 5 W 15 0.4 5 0.4 5 50 0 1 5 0.0 0. 4 0 POS .4 6 T 0.1 14 0.4 6 0 0 EN ITIV 40 ON 0 ER 4 MP 0. 1 EA CO C

5 0.

07 0. 3 4 0. 0 13

1.6

6 00
1.8

0.1 0.3 7 3
0.
2.0

0.2

50

0. 18 32

0.6

19 0. 31 0.

( Z+JXTANCE CO ) MPO

T EN

0.4

0 0.2 0 0.3

40

WAVELE NG

0 1.

S11
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

1.2

1.4

1.6

1.8 2.0

3.0

4.0

5.0

10

20

0.1

IC =0.620 mA
0. 8

IC = 20 mA f = 2.0 GHz
3. 0

0.2

1.

E NC TA X AC J O RE Z

0.3

0.

E IV AT

0.

2.0

0.6

1.8

1.6

0.7

0.8

1.4

0.9

1.2

1.0

S21e-FREQUENCY CONDITION VCE = 10 V IC = 20 mA 90 120 f = 0.2 GHz 60

120 f = 2.0 GHz

150

S21e

30

150 S12e

f = 2.0 GHz 180 3 6 9 12 15 0 180

f = 0.2 GHz 0.1 0.2 0.3 0.4 0.5 0

150

30

150

120 90

60

120 90

10

f = 0.2 GHz

0.4

20

f = 0.2 GHz

50

REACTANCE COMPONENT R 0.2 ZO

5.0

4.0

0.

32

0.

18 0 5

3 0.3 7

0.1

4 0.3 6 0.1

0.35 0.15 70

0.36 0.14 80

1.0

0.8

0.8

0.6

0.6

0.37 0.13

0.4

0.4

0.2

0.2

90

0.38 0.12

0.39 0.11 100

0.40 0.10 11 0

0.4 1 0.0 0.4 9 0.0 2 20 8

NE G

0. 4 0. 3 07 30

0.

0.6

3.
0.8

1 0.2 9 0.2 30

0.3

4.0

0.24 0.23 0.26 2 0.2 0.27 8 10 0.2 20

1.0
6.0

0.2

10

0.1

f = 20 GHz

20

50

0.25 0.25

0.26 0.24

10

0.27 0.23

0.2 2 20

0.2 8

0. 29 0.2 1 0.3 3 0.2 0 0 0

0. 3 4 0.1 1 0 9

S12e-FREQUENCY CONDITION 90 60 VCE = 10 V IC = 20 mA

30

30

60

2SC3357
[MEMO]

2SC3357
[MEMO]

2SC3357

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M4 96. 5