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Slides adapted from:
N. Weste, D. Harris, CMOS VLSI Design,
Addison-Wesley, 3/e, 2004
MOS Transistor
Theory
2
Outline
The Big Picture
MOS Structure
Ideal I-V Charcteristics
MOS Capacitance Models
Non ideal I-V Effects
Pass transistor circuits
Tristate Inverter
Switch level RC Delay Models
2
3
The Big Picture
So far, we have treated transistors as ideal switches
An ON transistor passes a finite amount of current
Depends on terminal voltages
Derive current-voltage (I-V) relationships
Transistor gate, source, drain all have capacitance
I = C (V/t) t = (C/I) V
Capacitance and current determine speed
4
MOS Transistor Symbol
3
5
MOS Structure
Gate and body form
MOS capacitor
Operating modes
Accumulation
Depletion
Inversion
6
nMOS Transistor Terminal Voltages
Mode of operation depends on V
g
, V
d
, V
s
V
gs
= V
g
V
s
V
gd
= V
g
V
d
V
ds
= V
d
V
s
= V
gs
- V
gd
Source and drain are symmetric diffusion terminals
By convention, source is terminal at lower voltage
Hence V
ds
0
nMOS body is grounded. First assume source is 0 too.
Three regions of operation
Cutoff
Linear
Saturation
V
g
V
s
V
d
V
gd
V
gs
V
ds
+
-
+
-
+
-
4
7
nMOS in cutoff operation mode
No channel
I
ds
= 0
8
nMOS in linear operation mode
Channel forms
Current flows from D to S
e
-
from S to D
I
ds
increases with V
ds
Similar to linear
resistor
5
9
nMOS in Saturation operation mode
Channel pinches off
I
ds
independent of V
ds
We say current saturates
Similar to current source
10
pMOS Transistor
6
11
I-V Characteristics (nMOS)
In Linear region, I
ds
depends on
How much charge is in the channel?
How fast is the charge moving?
12
Channel Charge
MOS structure looks like parallel
plate capacitor while operating in
inversion:
Gate oxide channel
Q
channel
= CV
C = C
g
=
ox
WL/t
ox
= c
ox
WL
V = V
gc
V
t
= (V
gs
V
ds
/2) V
t
c
ox
=
ox
/ t
ox
7
13
Carrier velocity
Charge is carried by e-
Carrier velocity v proportional to lateral
E-field between source and drain
v = E called mobility
E = V
ds
/L
Time for carrier to cross channel:
t = L / v
14
nMOS Linear I-V
Now we know
How much charge Q
channel
is in the channel
How much time t each carrier takes to cross
channel
ox
2
2
ds
ds
gs t ds
ds
gs t ds
Q
I
t
W
V
C V V V
L
V
V V V
=
| |
=
|
\ .
| |
=
|
\ .
ox
=
W
C
L
=
8
15
nMOS Saturation I-V
If V
gd
< V
t
, channel pinches off near drain
When V
ds
> V
dsat
= V
gs
V
t
Now drain voltage no longer increases current
( )
2
2
2
dsat
ds gs t dsat
gs t
V
I V V V
V V
| |
=
|
\ .
=
16
nMOS I-V Summary
( )
2
cutoff
linear
saturatio
0
2
2
n
gs t
ds
ds gs t ds ds dsat
gs t ds dsat
V V
V
I V V V V V
V V V V
<
| |
= <
|
\ .
>
| | | |
= = =
| |
\ .
\ .
0 1 2 3 4 5
0
0.5
1
1.5
2
2.5
V
ds
I
d
s
(
m
A
)
V
gs
= 5
V
gs
= 4
V
gs
= 3
V
gs
= 2
V
gs
= 1
10
19
pMOS I-V Characteritics
All dopings and voltages are inverted for pMOS
Mobility
p
is determined by holes
Typically 2-3x lower than that of electrons
n
120 cm
2
/V*s in AMI 0.6 mm process
Thus pMOS must be wider to provide same
current
In this class, assume
n
/
p
= 2
20
pMOS I-V Summary
( )
2
cutoff
linear
saturatio
0
2
2
n
gs t
ds
ds gs t ds ds dsat
gs t ds dsat
V V
V
I V V V V V
V V V V
<
| |
= <
|
\ .
>