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com

I
RG
R
G
R
F
R
S
OP AMP
I
BI
E
O
I
BN
E
RF
E
RS
E
NI
4kT +16E*20J @
T
290K
, T is temperature in Kelvin
E
NI
= Op Amp Input Noise Voltage
I
BN
= Op Amp Non-inverting Input Noise Current
I
BI
= Op Amp Inverting Noise Current
E
RS
= Source Resistor Noise Voltage = 4kTR
S
E
RF
= Feedback Resistor Noise Voltage = 4kTR
F
I
RG
+ Gain Setting Resistor Noise Current +
4kT
R
G



























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100
10
1
INPUT VOLTAGE AND CURRENT NOISE DENSITY
Frequency (Hz)
10
3
10
4
10
5
10
6
10
7
10
8
C
u
r
r
e
n
t
N
o
i
s
e
(
p
A
/

H
z
)
V
o
l
t
a
g
e
N
o
i
s
e
(
n
V
/

H
z
)
Noninverting Input Current Noise
Inverting Input Current Noise
19pA/Hz
22pA/Hz
Input Voltage Noise 1.7nV/Hz
INPUT VOLTAGE AND CURRENT NOISE
100
10
1
10 100 1k 10k 100k 1M 10M 100M
I
n
p
u
t
V
o
l
t
a
g
e
N
o
i
s
e
(
n
V
/

H
z
)
I
n
p
u
t
C
u
r
r
e
n
t
N
o
i
s
e
(
f
A
/

H
z
)
Frequency (Hz)
Voltage Noise
Current Noise
























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E
O
+ (E
NI
G
N
)
2
)

I
BN
R
S
G
N

2
)4kTR
S
G
N
2
)(I
BI
R
F
)
2
)4kTR
F
)
4kT
R
G
R
F
2


4kTR
F
)
4kT
R
G
R
F
2
+4kTR
F
@ G
N
E
O
+ E
NI
2
)

I
BN
R
S

2
)4kTR
S
G
N
2
)(I
BI
R
F
)
2
)4kTR
F
G
N













































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E
O
+ E
NI
2
G
N
2
)2(I
B
R
F
)
2
)2(4kTR
F
G
N
)



E
N
+ E
NI
2
)

I
BN
R
S

2
)4kTR
S
)
I
BI
R
F
G
N

2
)
4kTR
F
G
N


E
N
+ E
NI
2
)

I
BN
R
S

2
)4kTR
S
)

I
BI

R
F
R
G

2
)4kT

R
F
R
G


E
N
+ E
NI
2
)2

I
B

R
F
R
G

2
)2(4kT)

R
F
R
G



P
N
+ 10 @ log
E
O
2
50W(0.001)
+

13)20log

E
O

dBm

























































































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NPB +
p
2
@ F
*3dB
Hz (Single pole Low Pass filter )

NPB +
p
2
@ F
O
@ QHz (2ndorder Low Pass filter)

F
*3dB
+

F
O
@ 1*
1
2Q
2
) 1*
1
2Q
2

2
)1

Hz


F
O
+
W
O
2p
Hz








































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E
RMS
+ E
O
@ NPB


E
T
+ E
N
@ 1)
F
3dB
F

(spot noise voltage over frequency)



E
EQ
2
+
1
F
2
*F
1

F
2
F
1
E
N
2
1)
F
3db
F
df

E
EQ
2
+
E
N
2
F
2
*F
1
(F
2
*F
1
))F
3dB
ln
F
2
F
1
+ E
N
2
1)
F
3dB
F
2
*F
1
ln
F
2
F
1


E
EQ
+E
N
1)
F
3dB
F
2
*F
1
ln
F
2
F
1
(equivalent white noise voltage)




































































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1)
F
3dB
F
2
*F
1
ln
F
2
F
1


I
BI
R
G
R
F
OP AMP
I
RG
R
O I
BN
E
RF
E
RS
E
NI
Amplifier Source
S
I
/N
I
S
O
/N
O
R
T
R
S
E
RT
















































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NF
)
+ 10log

1)
R
S
R
T
)
R
S
4kT

E
NI
R
P

2
)(I
BN
)
2
)
I
BI
R
F
R
P
G
N

2
)
4kTR
F
G
N
R
P
2


NF
)
+ 10log

2)
E
NI
2
)

I
BN
R
S
2

2
)

I
BI
R
F
G
N

2
)
4kTR
F
G
N
kTR
S


NF
)
+ 10log

1)
E
NI
2
)

I
BN
R
S

2
)

I
BI
R
F
G
N

2
)
4kTR
F
G
N
4kTR
S


R
F
OP AMP
I
BI
E
RG
E
RF
E
RS
Amplifier Source
S
I
/N
I
S
O
/N
O
R
M
R
S
E
RM
R
T
E
RT
E
NI
I
BN
R
G
where:
E
NI
, I
BN
, I
BI
Op Amp Noise Sources
and E
RX
Resistor Voltage Noise Sources
and G
I
= R
F
/R
G
Inverting Gain



































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NF
*
+ 10log

22
R
G
R
S
*1)

E
NI
2
) (I
BN
R
T
)
2
)4kTR
T

A
T
2
)

I
BI
R
F
G
I

2
)
4kTR
F
G
I

2
kTR
S


A
T
+
1)G
I
1*
R
S
2R
G

G
I
+gain for noise terms at noninverting input


OPA695
5 to 50MHz
Bandpass
Filter
50
50
50
75
P
O
P
I
50
402






























































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E
O
+
(1.7nV)
2
)(19pA @ 25W)
2
)16E*21 @ 25W
(6.36)
2
)(22mA @ 402W)
2
)16E*21(402W) @ 6.36 + 16.1nV Hz


NF
)
+ 10log2)
(2.54nV)
2
(4E*21) @ 50
+ 15.4dB

NF
*
+ 10log

2(2*1))
(1.7nV)
2
)(19pA @ 25)
2
)16E*21 @ 25W
(.66)
2
)

22pA@316W
6.32

2
)
16E*21@316W
(6.32)
2
(4E*21)50W

+ 12.1dB

OPA655
5MHz
2nd Order
Butterworth Filter
R
S
= 0
R
G
2.5k
V
O
V
I
R
F
10k










































www.ti.com
E
EQ
+5.6nV 1)
2kHz
5.55MHz*10Hz
ln
5MHz
10
+5.613nV

E
O
+ (5.6nV @ 5)
2
)16E*21 @ 10kW@ 5

+ 40nV Hz


Integrated E
O
+

40nV Hz


5.55MHz

+ 94mV
RMS

















































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